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1 ural and electronic relatives alpha-GeSe and black phosphorus.
2 ls, like transition metal dichalcogenides or black phosphorus.
3 ive with atomically thin dichalcogenides and black phosphorus.
4 g graphene, molybdenum disulphide (MoS2) and black phosphorus.
5 o tune the electronic structure of few-layer black phosphorus.
6 ide can be used for passivation of ultrathin black phosphorus.
7 in a single-layer, two-dimensional material, black phosphorus.
8 with a tunable, direct bandgap, distinguish black phosphorus 2DEG as a system with unique electronic
10 layed a typical I-V curve similar to that of black phosphorus and a similar mobility reaching 300 cm(
12 this behaviour is intrinsic for single-layer black phosphorus, and originates from its puckered struc
16 rientation-dependent thermal conductivity of black phosphorus are useful for designing devices, as we
17 ndent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer ele
19 10 nm thick flake of exfoliated crystalline black phosphorus as an active channel of a field-effect
20 a Sn/SnI4 catalyst mixture has provided bulk black phosphorus at much lower pressures than those requ
22 ccessful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered fro
25 sotropic thermal-conductivity tensor of bulk black phosphorus (BP) for 80 </=T </= 300 K is reported.
28 an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGex cont
30 isotropic thermal conductivity of passivated black phosphorus (BP), a reactive two-dimensional materi
32 m nitride (hBN) with a few layer phosphorene black phosphorus (BP), hBN/BP/hBN heterostructures are m
38 plane anisotropy of a flexible thin flake of black-phosphorus (BP), we devise plasma-wave, thermoelec
43 y barrier heights for electrons and holes in black phosphorus devices for a large range of body thick
44 ), while the previously known alpha form and black phosphorus display the more common chair conformat
45 on of a widely tunable band gap in few-layer black phosphorus doped with potassium using an in situ s
48 tio is found to be approximately 2 for thick black phosphorus films and drops to approximately 1.5 fo
50 ly 20 and approximately 40 W m(-1) K(-1) for black phosphorus films thicker than 15 nm, respectively,
57 No superconductivity could be achieved for black phosphorus in its normal orthorhombic form, despit
67 anopatterning and layer-by-layer thinning of black phosphorus is demonstrated with conductive atomic-
70 ional semiconductors such as atomically thin black phosphorus, is significantly affected by the elect
71 opposite potentials on the opposite ends of black phosphorus macroparticles thereby leading to its d
73 values fall between those of alpha-GeSe and black phosphorus, making beta-GeSe a promising candidate
75 thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy.
79 plane thermal conductivity of single-crystal black phosphorus nanoribbons along the zigzag and armcha
81 c basal-plane thermal conductivities of thin black phosphorus obtained from a new four-probe measurem
82 le, we trace back to the research history on black phosphorus of over 100 years from the synthesis to
85 the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way
87 platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and p
89 e been developed for scalable exfoliation of black phosphorus, these techniques have thus far used an
90 r measurements indicate that PMMA passivated black phosphorus thin film flakes can stay pristine for
93 te a broadband photodetector using a layered black phosphorus transistor that is polarization-sensiti
94 .365 kOmegamum, which is the lowest value in black phosphorus transistors without degradation of ION/
96 pic and strongly bound excitons in monolayer black phosphorus using polarization-resolved photolumine
98 d study of mechanically exfoliated few-layer black phosphorus, with thickness ranging from 2 to 15 la
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