ライフサイエンスコーパス: boron nitride

1 ribute to defects within the bulk insulating boron nitride.

2 n of defect phenomena in the underlying bulk boron nitride.

3 th both occurring naturally within hexagonal boron nitride.

4 inert, atomically smooth sheet of hexagonal boron nitride.

5 lasmons in graphene and phonon polaritons in boron nitride.

6 resentative van der Waals crystal, hexagonal boron nitride.

7 edge states of graphene and the polarity of boron nitride.

8 f high-quality BLG encapsulated in hexagonal boron nitride.

9 as well as on exfoliated flakes of hexagonal boron nitride.

10 superhard materials such as diamond or cubic boron nitride.

11 er graphene placed on a crystal of hexagonal boron nitride.

12 m comprising graphene stacked atop hexagonal boron nitride.

13 Crystalline 2D hexagonal boron nitride (2D-hBN) nanosheets are explored as a pote

14 nts demonstrating that crystals of hexagonal boron nitride, a natural mid-infrared hyperbolic materia

15 tride, making it possible to produce uniform boron nitride and boron carbonitride structures without

16 mic layer structures consisting of graphene, boron nitride and boron carbonitride.

17 y favored CO2 Here, we report that hexagonal boron nitride and boron nitride nanotubes exhibit unique

18 yers are fully encapsulated within hexagonal boron nitride and electrically contacted in a multi-term

19 nal interface has been realized in hexagonal boron nitride and graphene planar heterostructures, wher

20 ort in graphene, and charge transfer between boron nitride and graphene.

21 of bubbles formed by monolayers of graphene, boron nitride and MoS2.

22 emical properties of hole- and edge-enriched boron nitride and other 2D nanosheets, paving the way to

23 y the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-res

24 rising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono-

25 two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have

26 sional layers, including graphene, hexagonal-boron nitride and transition-metal dichalcogenides (MX2)

27 king metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into

28 ulus of 348 GPa, comparable to that of cubic boron nitride, and a Vickers hardness of 20 GPa, which i

29 Brx), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel.

30 ogenide, graphitic carbon nitride, hexagonal boron nitride, and phosphorene) are emerging extraordina

31 Graphene and hexagonal boron nitride are typical conductor and insulator, respe

32 These observations assert hexagonal boron nitride as a promising platform for studying novel

33 With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are

34 nsional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers man

35 t defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron

36 mi level depending on the termination of the boron nitride at the boundary, and are extended along bu

37 These hexagonal boron nitride atomic layer coatings, which can be synthe

38 We demonstrate that graphene and boron nitride bands do not interact over a wide energy r

39 onant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwi

40 o the emergence and development of hexagonal boron nitride, black phosphorus, and transition metal di

41 One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodo

42 ct of the quadratic NLO properties of hybrid boron nitride (BN) graphene flakes is opened up.

43 actuator made of carbon nanotubes (CNTs) and boron nitride (BN) is developed that can withstand high

44 y pass through interlayer spaces in hydrated boron nitride (BN) membranes.

45 udy of the adsorption of CO2, CH4, and H2 on boron nitride (BN) nanosheets and nanotubes (NTs) with d

46 Atomically thin boron nitride (BN) nanosheets are important two-dimensio

47 t of 5 bisphenol derivatives using hexagonal boron nitride (BN) was developed.

48 Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and bo

49 based on graphene-like 2D materials, such as boron nitride (BN), graphite-carbon nitride (g-C3N4), tr

50 d the current scope limited to the graphene, boron nitride (BN), zinc oxide (ZnO) and molybdenum sulf

51 posed of either natural boron (B) or natural boron nitride (BN).

52 irst-principles theory study of the graphene-boron nitride boundary to provide a first glimpse into t

53 entation shear strength in nanotwinned cubic boron nitride by bond rearrangement at the twin boundary

54 eported a substantial strengthening of cubic boron nitride by nanotwinning.

55 plied to obtain synthetic diamonds and cubic boron nitride (c-BN), which are the superhard abrasives

56 that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin b

57 We show that monolayers of graphene and boron nitride can be used to separate hydrogen ion isoto

58 d with the higher thermal stability of cubic boron nitride (cBN) have broad potential value in scienc

59 ll inspire studies on carbyne, cumulene, and boron nitride chains for their practical deployments in

60 d by metallic disks underneath the hexagonal boron nitride crystal.

61 anically self-rotating towards the hexagonal boron nitride crystallographic directions.

62 lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (

63 harge and energy-level information for these boron nitride defect structures.

64 e heterostructures, separated by a hexagonal boron nitride dielectric.

65 pothesis in which oxygen-terminated armchair boron nitride edges are proposed to be the catalytic act

66 optical excitation of defect transitions in boron nitride, electrical transport in graphene, and cha

67 ructures consisting of dual-gated, hexagonal-boron-nitride-encapsulated bilayer graphene.

68 de (MoS2), niobium diselenide, and hexagonal boron nitride exfoliated onto a weakly adherent substrat

69 We show that such ultrathin hexagonal boron nitride films are impervious to oxygen diffusion e

70 in single-layer graphene sandwiched between boron nitride flakes.

71 ormance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flex

72 uctor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-eff

73 conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended pre

74 of several such materials such as hexagonal boron nitride (h-BN) and dichalcogenides are examples th

75 bonding, the soft, graphite-like, hexagonal boron nitride (h-BN) and its superhard, diamond-like, cu

76 fined pit/hole shapes and edges on hexagonal boron nitride (h-BN) basal plane surfaces via oxidative

77 s for the large-scale synthesis of hexagonal boron nitride (h-BN) by chemical vapour deposition (CVD)

78 Ultrasmooth hexagonal boron nitride (h-BN) can dramatically enhance the carrie

79 Herein, hexagonal boron nitride (h-BN) films are prepared from chemical va

80 Graphene and hexagonal boron nitride (h-BN) have similar crystal structures wit

81 pattern in highly aligned graphene/hexagonal boron nitride (h-BN) heterostructures is a lateral super

82 Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized o

83 Many emerging applications of hexagonal boron nitride (h-BN) in graphene-based nanoelectronics r

84 heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all

85 The controlled exfoliation of hexagonal boron nitride (h-BN) into single- or few-layered nanoshe

86 Although hexagonal boron nitride (h-BN) is a good candidate for gate-insula

87 Hexagonal boron nitride (h-BN) is a natural hyperbolic material, i

88 Hexagonal boron nitride (h-BN) is an appealing substrate, because

89 Hexagonal boron nitride (h-BN) is an insulating compound that is s

90 Hexagonal boron nitride (h-BN) is known as promising 2D material w

91 ing of aerogels and membranes from hexagonal boron nitride (h-BN) is much more difficult than from gr

92 line structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic elect

93 e layers reinforced with conformal hexagonal boron nitride (h-BN) platelets.

94 supported on a weakly-interacting hexagonal boron nitride (h-BN) substrate are computed using densit

95 d by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate.

96 Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have rece

97 l vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmiss

98 ication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of

99 sic and doped graphene, as well as hexagonal boron nitride (h-BN), controlled fabrication of lateral

100 Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb latt

101 0 nuclear spins in atomically thin hexagonal boron nitride (h-BN).

102 encapsulated between two films of hexagonal boron nitride (h-BN).

103 ical material system--graphene and hexagonal boron nitride (h-BN).

104 Pristine graphene encapsulated in hexagonal boron nitride has transport properties rivalling suspend

105 nsional (2D) materials, such as graphene and boron nitride, have specific lattice structures independ

106 Studies of hexagonal boron nitride (hBN) are also visited, highlighting the i

107 sh that monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal prot

108 perature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimens

109 Hexagonal boron nitride (hBN) is drawing increasing attention as a

110 t epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temper

111 igated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal)

112 ul growth of MoSe2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using mole

113 an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-elect

114 negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces, as shown by Raman spectros

115 ted from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spect

116 Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy ( appr

117 ime through isotopic enrichment of hexagonal boron nitride (hBN).

118 ed after adding natural fiber into hexagonal boron nitride (hBN)/epoxy composites.

119 We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enabl

120 trate a device in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold n

121 ns the high carrier mobility of the graphene/boron nitride heterostructure, thus resembling the modul

122 We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomic

123 optical and electrical responses of graphene/boron nitride heterostructures, including optical excita

124 monolayer graphene and multilayer hexagonal boron nitride heterostructures, we discuss the potential

125 In particular, graphene/boron-nitride heterostructures have emerged as a very pr

126 f an intrinsic bandgap in epitaxial graphene/boron-nitride heterostructures with zero crystallographi

127 field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures.

128 titanate, whose mobility when protected with boron nitride improves more than 10-fold while achieving

129 electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonan

130 ative defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipul

131 Hexagonal boron nitride is a model lamellar compound where weak, n

132 Hexagonal boron nitride is a two-dimensional layered material that

133 rared, natural hyperbolic material hexagonal boron nitride is an attractive alternative.

134 oxidation of atomically thin two-dimensional boron nitride is studied.

135 ntaining aluminium and silicon as well as of boron nitrides, it is explained how the nanocomposites w

136 graphene layers coated with a few hexagonal boron nitride layers are also protected at similarly hig

137 resistant coatings of high-quality hexagonal boron nitride layers with controlled thicknesses from do

138 In coupled graphene-graphene and graphene-boron nitride layers, interesting physical phenomena ran

139 encapsulation of graphene between hexagonal boron nitride layers, one-dimensional edge contacts and

140 heterostructures consisting of graphene and boron nitride layers.

141 In hexagonal boron nitride, low-loss infrared-active phonon-polariton

142 the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform bor

143 iquids, such as those (e.g., carbon nitride, boron nitride, metal-organic frameworks, covalent organi

144 eter-thin molybdenum disulfide and hexagonal boron nitride microcrystals, the most-promising van der

145 titutions caused in-plane distortions in the boron nitride monolayer of about 0.1 A magnitude, which

146 incorporate molybdenum diselenide/hexagonal boron nitride (MoSe2/hBN) quantum wells in a tunable opt

147 sionally confined 'hyperbolic polaritons' in boron nitride nanocones that support four series (up to

148 lyldimethylammonium chloride) functionalized boron nitride nanosheets (Au-Pd NPs@BNNSs) and conjugate

149 gh quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temp

150 om restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported.

151 formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulse

152 cles assembled on vacancy-abundant hexagonal boron nitride nanosheets and their use as a model cataly

153 ocomposite incorporated with two-dimensional boron nitride nanosheets and zero-dimensional barium tit

154 omposites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively en

155 oron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %.

156 composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron

157 illed with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitr

158 Boron nitride nanosheets were dispersed in polymers to g

159 o the lower thermal contact resistance among boron nitride nanosheets' interfaces.

160 nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal co

161 sslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of w

162 l conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation

163 ng connections of silver nanoparticles among boron nitride nanosheets.

164 feature of Pt after assembling on hexagonal boron nitride nanosheets.

165 al functionalization of exfoliated hexagonal boron-nitride nanosheets (BNNSs) is achieved by the solu

166 pproach, we demonstrate that the fluorinated boron nitride nanotube (F-BNNT) quantum dot, which is fe

167 n a one-dimensional material consisting of a boron nitride nanotube at mid-infrared wavelengths.

168 ays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction chan

169 lled carbon nanotubes (CNTs) and multiwalled boron nitride nanotubes (BNNTs) during the fracture and

170 Boron nitride nanotubes (BNNTs) have been reported to po

171 ctural stability and mechanical integrity of boron nitride nanotubes (BNNTs) in high temperature envi

172 Boron nitride nanotubes (BNNTs) were successfully synthe

173 vestigated properties of chemically modified boron nitride nanotubes (BNNTs) with NH(3) and four othe

174 We report the discovery that boron nitride nanotubes (BNNTs), isosteres of CNTs with

175 60 molecules into the interior of insulating boron nitride nanotubes (BNNTs).For small-diameter BNNTs

176 t that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the f

177 surface phonon polaritons on the surface of boron nitride nanotubes and found that it decays within

178 eport atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 de

179 , we report that hexagonal boron nitride and boron nitride nanotubes exhibit unique and hitherto unan

180 page in carbon nanotubes, and no slippage in boron nitride nanotubes that are crystallographically si

181 orphological and chemical transformations in boron nitride nanotubes under high temperature atmospher

182 High-thermal-conductivity carbon and boron nitride nanotubes were mass-loaded externally and

183 t applications make use of carbon nanotubes, boron nitride nanotubes, graphene and graphene oxide.

184 nt success in synthesizing nanotwinned cubic boron nitride (nt-cBN) with a twin thickness down to app

185 es in graphene encapsulated within hexagonal boron nitride, opening the door to direct thermal imagin

186 aphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertic

187 DS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure

188 ted effect with phonon-polaritonic hexagonal boron nitride, plasmonic super-lattices and hyperbolic m

189 ing in bilayer graphene coupled to hexagonal boron nitride provide a periodic modulation with ideal l

190 2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic device

191 ngle-layer graphene, and few-layer hexagonal boron nitride, respectively, are utilized to design high

192 s and in the mid-infrared range of hexagonal boron nitride's upper Reststrahlen band.

193 ion in a host of materials such as hexagonal boron nitride, silicon carbide, and others.

194 manene, and their saturated forms; hexagonal boron nitride; silicon carbide), rare earth, semimetals,

195 transport properties of graphene placed on a boron nitride substrate and accurately aligned along its

196 of graphene's carbon atoms when placed on a boron nitride substrate, and then for the influence of t

197 en a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are pro

198 lm hosting the 2DEG is placed on a hexagonal boron nitride substrate.

199 coupled to a rotationally aligned hexagonal boron nitride substrate.

200 tellite Dirac cones in graphene on hexagonal boron nitride substrates.

201 WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multipl

202 al type of every atom in monolayer hexagonal boron nitride that contains substitutional defects.

203 ase of aligned or nearly-aligned graphene on boron nitride, the graphene lattice can stretch and comp

204 hat, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals a

205 olaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical appl

206 The 1T-TaS2 film is capped with hexagonal boron nitride to provide protection from oxidation.

207 anomaterials (e.g. graphitic carbon nitride, boron nitride, transition metal dichalcogenides, and tra

208 in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere.

209 n heterostructures of graphene and hexagonal boron nitride, which consequently are widely used.

210 e interlayer separation between graphene and boron nitride, which we achieve by applying pressure wit

211 er graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.