ライフサイエンスコーパス: carbide

1 n epitaxial graphene on silicon-face silicon carbide.

2 tural instability and amorphization of boron carbide.

3 tial similar to or exceeding that of silicon carbide.

4 hyl transfer and conversion to an iron-bound carbide.

5 ilicon and carbon faces of hexagonal silicon carbide.

6 table than a mixture of SiO2, C, and silicon carbide.

7 alyst neither reduces to a metal nor forms a carbide.

8 have also been observed on powdered silicon carbide.

9 n going from the methylidyne to the terminal carbide.

10 ing Fe and Ni particles supported on silicon carbide.

11 w and measure stable crack growth in silicon carbide.

12 cal SAM chemistry for generating the central carbide.

13 uctors such as transition-metal nitrides and carbides.

14 l component in bimetallic systems with metal carbides.

15 Pt) atomically dispersed on alpha-molybdenum carbide (alpha-MoC) enables low-temperature (150-190 deg

16 d layered gold (Au) clusters on a molybdenum carbide (alpha-MoC) substrate to create an interfacial c

17 The Mossbauer spectroscopy of iron carbides (alpha-Fe, gamma'-FeC, eta-Fe2C, zeta-Fe2C, chi

18 reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier.

19 The electronic structures of Mo carbide and carbyne species were investigated quantum me

20 Silicon carbide and gallium nitride, two leading wide band gap s

21 s) which are observed in both the molybdenum carbide and nitride samples.

22 nraveling the importance of the interstitial carbide and providing insights into the nitrogenase mech

23 e thin films deposited on insulating silicon carbide and report the characterization of their electro

24 Reduction of Mo(IV) CO adducts of carbide and silylcarbyne species allowed for the spectro

25 ace reconstruction of single-crystal silicon carbide and study this process by high-resolution transm

26 tance and influence of both the interstitial carbide and the identity of the heteroatom on the electr

27 s ratio governs the chemical behavior of the carbide and the properties of the admetal, up to the poi

28 observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths.

29 When compared to diamond, carbides and borides, nitrides are of interest because o

30 in the deep Earth, involving Fe-C phases (Fe carbides and C dissolved in Fe-Ni metal).

31 s a basis for exploring a large family of 2D carbides and carbonitrides in electrochemical energy sto

32 two-dimensional (2D) early transition metal carbides and carbonitrides, called MXenes, was discovere

33 Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted gre

34 MXenes, two-dimensional (2D) metal carbides and nitrides, have attracted attention for appl

35 Two-dimensional metal carbides and nitrides, known as MXenes, combine metallic

36 2D transition-metal carbides and nitrides, known as MXenes, have displayed p

37 2D transition metal carbides and nitrides, named MXenes, are attracting incr

38 activity among all four phases of molybdenum carbide, and is exceedingly stable in acidic solution.

39 als such as hexagonal boron nitride, silicon carbide, and others.

40 The identification of an analogous carbide, and thus an atomically homologous active site i

41 ed SLG surfaces supported on copper, silicon carbide, and transparent fused silica (SiO(2)) substrate

42 ivation on monofunctional catalysts (metals, carbides, and oxides) is challenging due to activity con

43 rmine the molecular structure of acid-etched carbide- and diamond-bur-created smear layers.

44 engths and show that the icosahedra in boron carbide are not as stable as anticipated.

45 and the stacking faults of the primary M7C3 carbide are observed by scanning electron microscopy (SE

46 Point defects in silicon carbide are rapidly becoming a platform of great interes

47 ene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ballistic co

48 Carbides are also catalytically active for a variety of

49 Some primary M7C3 carbides are formed by layers of shell or/and consist of

50 Nanostructured carbides are refractory materials with high surface area

51 ransition metal oxides, dichalcogenides, and carbides, are presented.

52 d out, but also titanium, tungsten and boron carbides, as well as carbide-derived carbons, are part o

53 12 times better than conventional zirconium carbide at 2,500 degrees C).

54 crease in the ballistic performance of boron carbide at high impact rates and pressures.

55 ster, is a metal-sulfur cluster containing a carbide at its core.

56 we systematically explore all stable calcium carbides at pressures from ambient to 100 GPa using vari

57 s of S-adenosyl methionine (SAM) to insert a carbide atom and fuse two substrate [Fe-S] clusters form

58 In this study, we labeled the interstitial carbide atom with (14)C and (13)C isotopes and traced th

59 As a central theme silicon carbide based materials are picked out, but also titaniu

60 forcing and enhancing the wear resistance of carbide based materials.

61 n the surfaces and in the interiors of boron carbide based nanowires.

62 stallographic class of circumstellar silicon carbide based on astronomical infrared spectra is contro

63 Herein, a highly durable and efficient carbide-based bifunctional catalyst consisting of iron-m

64 tures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are

65 A versatile method for achieving atomic carbide-bonded graphene networks on both metallic and no

66 ition on substrates and in situ formation of carbide bonds.

67 mpounds and applied to samples such as boron carbide, boric acid, carborane, and borosilicate glass.

68 extended to other metals to synthesize metal carbide, boride, and nitride coatings.

69 f making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals

70 metal and main-group-element surface alloys: carbides, borides, and nitrides, which feature high stab

71 significantly lower bond strengths than the carbide bur, and both were lower than flat, non-carious

72 olymer burs are as effective as conventional carbide burs in creating substrates for dentin bonding.

73 graphite was grown on single-crystal silicon carbide by vacuum graphitization.

74 oscopy confirmed the formation of transition carbides by auto-tempering as well as the presence of re

75 with graphite, carbon nanotubes, or silicon carbide can be used to carry out reactions more typicall

76 theoretical calculations show that Fe and Si carbides can be significantly depleted in (13)C relative

77 The formation of carbides can significantly modify the physical and chemi

78 Our results show that the interstitial carbide cannot be exchanged upon turnover, nor can it be

79 W triple bond C-Li adds electrophiles at the carbide carbon to generate Tp'(CO)(2)W triple bond C--R

80 (13)C NMR spectrum has been assigned to the carbide carbon.

81 achieved over a high-surface-area molybdenum carbide catalyst prepared by a temperature-programmed re

82 N[R]Ar)(3), are statistically identical, the carbide chemical shift of delta 501 ppm is much larger t

83 Additive-free films of this titanium carbide 'clay' have volumetric capacitances of up to 900

84 methods are employed to examine this yttrium carbide cluster in certain family members, Y(2)C(2)@D(5)

85 A non-isolated pentagon rule metallic carbide clusterfullerene containing a heptagonal ring, S

86 e classes of EMFs with nitride, sulfide, and carbide clusters and different metal atoms (Sc, Y, Ti).

87 dy on the size and shape of isolated yttrium carbide clusters in different fullerene cages.

88 Besides being a strong reducing agent, carbide [CMo(N[R]Ar)(3)](-) reacts as a nucleophile with

89 Methylidyne HCMo(N[R]Ar)(3) and carbide [CMo(N[R]Ar)(3)](-) undergo extremely rapid prot

90 rication of vertically aligned CNS and metal carbide@CNS composites via a facile salt templating indu

91 e resulting vertically aligned CNS and metal carbide@CNS structures possess ultrathin walls, good ele

92 olimus-eluting DP-DES, or thin-strut silicon-carbide-coated BMS in 8 European centers.

93 Tungsten carbide cobalt (WC-Co) matrix nanocomposites reinforced

94 ents with enhanced properties over the metal carbides commonly used in cutting, drilling, and wear-re

95 ynthesis of other micro/nanostructured metal carbides/composites from metal oxides/carbon precursors.

96 the silicon in the derivative forms silicon carbide compounds in the heated cupric oxide reactor, ra

97 r outflows and the corresponding low silicon carbide condensation temperatures.

98 an be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled

99 ction (EBSD) maps show that the primary M7C3 carbide consists of multiple parts.

100 Though some carbide-containing iron clusters are known, none yet hav

101 lybdenum-dependent nitrogenase is the unique carbide-containing iron-sulfur cluster called the iron-m

102 The semi-molten M7C3 carbide contains unmelted shell and several small-scale

103 ial review on cellular as well as nanoporous carbides covering their structure, synthesis and potenti

104 al matrix with in-situ formation of chromium carbide (Cr7C3) at the CNT/copper (Cu) interface.

105 micro-supercapacitors with embedded titanium carbide current collectors, fully compatible with curren

106 bstrate-dependent amounts of Ti oxide and Ti carbide "damage".

107 ry of crystallographic planes in these boron carbide datasets substantiates that crystallinity is mai

108 Novel nanostructured sulfur (S)-carbide derived carbon (CDC) composites with ordered mes

109 were used to characterize ion adsorption in carbide-derived carbon (CDC) with two different average

110 ping on hydrophobicity of nanoporous silicon carbide-derived carbon (SiCDC), and investigate the unde

111 ich is consistent with recent experiments on carbide-derived carbon electrodes.

112 process for manufacturing strongly adhering carbide-derived carbon films and interdigitated micro-su

113 Using carbide-derived carbon, we generated pores with average

114 The result is a predominantly amorphous carbide-derived carbon, with a narrow distribution of mi

115 with electrodes composed of porous nanosized carbide-derived carbons (CDCs) and nonporous onion-like

116 Here we demonstrate that porosity of carbide-derived carbons (CDCs) can be tuned with subangs

117 acitors utilizing carbon nanotube forests or carbide-derived carbons as electrode material.

118 ium, tungsten and boron carbides, as well as carbide-derived carbons, are part of this review.

119 fracture energy for a bi-crystal of silicon carbide, diffusion bonded with a thin glassy layer.To im

120 Joining the intermetallic and carbide domains together then provides substantial relie

121 A primordial C/O greater than 0.8 causes a carbide-dominated interior, as opposed to the silicate-d

122 (in the first 15 h) of the high-surface-area carbide during the reaction was ascribed to considerable

123 ade developing epitaxial graphene on silicon carbide (EG) as a new electronic material.

124 d atom probe tomography experiments on boron carbide elucidate an approach for characterizing the ato

125 a strategy to produce highly dispersed iron carbides embedded in a matrix of porous carbon.

126 For tungsten carbide - epoxy crystals we identify all angle all mode

127 ther nuclear fuel materials (e.g., nitrides, carbides, etc.) in the form of pellets, powders, and mic

128 ' band at 2700 cm (-1), and it had more iron carbide (Fe 3C) crystal than nanocrystalline graphite or

129 ional catalyst consisting of iron-molybdenum carbide (Fe3 Mo3 C) and IrMn nanoalloys is demonstratred

130 perimental data up to core pressures on iron carbide Fe7C3, a candidate component of the inner core,

131 Carbide films exhibit many unique properties.

132 These epitaxial carbide films exhibit structural and physical properties

133 e and simple technique for the deposition of carbide films will enable a wide range of technological

134 used in combination with an uncoated silicon carbide filter and report effects on emissions of polych

135 enhanced uptake of oxygen correlated to the carbide formation.

136 -O cleavage as rate-determining steps toward carbide formation.

137 the initial growth period, the primary M7C3 carbide forms protrusion parallel to {} crystal planes.

138 sion electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite.

139 t the synthesis and crystal structure of the carbide Gd(13)Fe(10)C(13).

140 Molybdenum carbide has been proposed as a possible alternative to p

141 ally been elucidated, and the discovery of a carbide has generated new questions and targets for coor

142 The unusual structure of these carbides has attracted much attention: C assumes a tetra

143 icroscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragr

144 New two-dimensional niobium and vanadium carbides have been synthesized by selective etching, at

145 d to image key features such as microcracks, carbides, heat affected zone, and dendrites in a laser a

146 tructure, by extracting silicon from silicon carbide in chlorine-containing gases at ambient pressure

147 It is found that the primary M7C3 carbide in hypereutectic Fe-Cr-C alloy is irregular poly

148 ggests an essential role of the interstitial carbide in maintaining the stability while permitting a

149 rvations point to a role of the interstitial carbide in stabilizing the cofactor structure, although

150 As for our identification of the central carbide in the Fe-Mo cofactor, we employed Fe Kbeta vale

151 provided for the presence of an interstitial carbide in the Fe-V cofactor of Azotobacter vinelandii v

152 he incorporation of finely dispersed V-Mo-Nb carbides in a ferrite matrix.

153 The latter is produced by placing the carbides in HF, HCl or NaCl solutions and applying anodi

154 sted deposition method for growing epitaxial carbide (including TiC, VC, and TaC) films.

155 Previously, we proposed a carbide insertion pathway involving methyltransfer from

156 n, thereby refining the initial steps of the carbide insertion pathway.

157 Carbide insertion plays a pivotal role in the biosynthes

158 tains unmelted shell and several small-scale carbides inside, which further proves that the primary M

159 gregation of Mn-Si (intermetallic) and Mn-C (carbide) interactions in these structures can be underst

160 ngle epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the cha

161 nduced transformation of diamond and silicon carbide into graphene suffers from metal contamination a

162 rected towards converting silicon or silicon carbide into other chemicals.

163 yl-L-methionine (SAM)-dependent insertion of carbide into the M cluster, the cofactor of the molybden

164 adical-based incorporation of methyl-derived carbide into the M cluster.

165 The carbide is a substitutional solid solution of Zr-Ti cont

166 Supported tungsten carbide is an efficient and vital nanomaterial for the d

167 This carbide is chemically stable in alkaline media and over

168 Cradle-to-gate, silicon carbide is estimated to require more than twice the ener

169 , which further proves that the primary M7C3 carbide is not an overall block.

170 Silicon carbide is used as AFM tip material, resulting in reduce

171 ved that the coalescence of the primary M7C3 carbides is ascribed to the growing condition of the pro

172 dulation of ripples on both graphene-silicon carbide junctions.

173 blocks, cured and sectioned with a tungsten carbide knife to obtain mineralized bone sections for dy

174 MXenes combine 2D conductive carbide layers with a hydrophilic, primarily hydroxyl-te

175 is the formation of a C-Li bond compound (Li carbides), Li(CH2)2OCO2Li.

176 results show that the presence of carbon or carbide-like species at the interface between the Ni clu

177 such as lithium divinylene dicarbonate, Li-C carbides, lithium vinylene dicarbonate, R-O-Li compound,

178 e ammonia nitridation of a parent core-shell carbide material (Pt/TiWC).

179 can also be readily extended to other metal carbide materials as well as TiC.

180 This work highlights the potential of using carbide materials to reduce the costs of hydrogen produc

181 Especially new carbide materials with a hierarchical pore structure are

182 Consequently, tungsten carbide may be a promising catalyst in self-hydrating cr

183 e for this top-down mechanism based on metal carbide metallofullerenes M2C2@C1(51383)-C84 (M = Y, Gd)

184 demonstrate high-frequency multimode silicon carbide microdisk resonators and spatial mapping of the

185 nd characterization of two new intermetallic carbides: Mn16SiC4 (mC42) and Mn17Si2C4 (mP46).

186 o oxide species agglomerate and convert into carbided Mo nanoparticles.

187 gsten carbides (WC and W(2)C) and molybdenum carbide (Mo(2)C).

188 ungsten carbide (WC) and molybdenum tungsten carbide (Mo(x)W(1-x)C) nanoparticles are highly active a

189 NC that is composed of ultrasmall molybdenum carbide (Mo2 C) nanoparticles embedded within nitrogen-r

190 g the non-precious metal material molybdenum carbide (Mo2C) as an active and selective catalyst for C

191 Titanium carbide MXene (Ti3 C2 Tx ), in particular, has shown sig

192 foliated two-dimensional (2D) Ti3C2 titanium carbide (MXene) nanosheets.

193 es, conducting polymers, 2D transition metal carbides (MXene), and other transition metal dichalcogen

194 nides, and more recently 2D transition metal carbides (MXenes).

195 w that a dense uniform dispersion of silicon carbide nanoparticles (14 per cent by volume) in magnesi

196 enzene hydrogenation reactions on molybdenum carbide nanoparticles (MCNPs) in the process of in situ

197 High-temperature oxidation of silicon-carbide nanoparticles (nSiC) underlies a wide range of t

198 d to produce well-dispersed transition metal carbide nanoparticles as additives to enhance the perfor

199 trated the self-assembly of transition metal carbide nanoparticles coated with atomically thin noble

200 d to produce well-dispersed transition metal carbide nanoparticles.

201 Tungsten carbide nanorods (WC NRs) are demonstrated for the first

202 Silicon carbide nanowires (SiC NWs) have attracted intensive att

203 the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation.

204 Ultrathin tantalum carbide, nitride, and boride are grown using chemical va

205 2D transition metal carbides, nitrides, and carbonitides called MXenes have

206 tic method could be a versatile route toward carbide NPs of varying size, composition, and phase, on

207 Surface carbides of cobalt and nickel are exceptionally stable,

208 Transition metal carbides often display electronic and catalytic properti

209 The microdisks are made in a 500-nm-carbide on 500-nm-oxide thin-film technology that facili

210 the impact of the metal/carbon ratio in the carbide on the performance of the catalysts.

211 XPS spectra revealed the formation of metal carbides on these reactive metals, and the carbon deposi

212 ade from single-crystalline silicon, silicon carbide or gallium nitride p-n junction photodiodes.

213 from extracted human molars was removed with carbide or polymer burs, with dental explorer hardness a

214 alized two-dimensional (2D) transition-metal carbides or MXenes: Sc2C, Ti2C, Ti3C2, V2C, Cr2C, and Nb

215 radiolabeling experiments, we show that this carbide originates from the methyl group of S-adenosylme

216 as been assumed to form a few-atoms-thick Ti carbide overlayer.

217 The influence of the iron carbide particle size of promoted and unpromoted carbon

218 These results demonstrate that the iron carbide particle size plays a crucial role in the design

219 edges, which are more abundant on small iron carbide particles.

220 ing an optimal dispersion of the active iron carbide phase when a metal organic framework is used as

221 s produced a family of complex intermetallic carbide phases.

222 ns of the surface energy of the same silicon carbide plane.

223 eport the directional amorphization in boron carbide polycrystals.

224 d on group IV-V transition metal borides and carbides possess melting points above 3000 degrees C, ar

225 pplications in cutting when the formation of carbides prevents the use of traditional materials such

226 ated forms; hexagonal boron nitride; silicon carbide), rare earth, semimetals, transition metal chalc

227 on of indentation of nanocrystalline silicon carbide reveals unusual deformation mechanisms in brittl

228 tion to any depth, so that the whole silicon carbide sample can be converted to carbon.

229 al X-ray diffraction revealed that it is the carbide Sc2C2@C(2v)(9)-C86 with a planar, twisted Sc2C2

230 extending and revolving protrusion forms the carbide shell.

231 noparticles supported on graphite-rich boron carbide show a 50-100% increase in activity in acidic me

232 Silicon carbide (SiC) exhibits excellent material properties att

233 Silicon carbide (SiC) has unique chemical, physical, and mechani

234 Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for

235 Defects in silicon carbide (SiC) have emerged as a favorable platform for o

236 Silicon carbide (SiC) is a fascinating wide-band gap semiconduct

237 rk shows that HF etching of oxidized silicon carbide (SiC) leads to a very different surface terminat

238 ductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switch

239 ed as sludge waste consisting of Si, silicon carbide (SiC) particles and metal impurities from the fr

240 uthenium (Ru) in individual presolar silicon carbide (SiC) stardust grains bears the signature of s-p

241 e field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser bea

242 those of several deep centers in 4H silicon carbide (SiC).

243 measurement of the surface energy of silicon carbide single crystals.

244 e molecular-monolayer carbon formed titanium carbide, SiO2 substrates approximately 15%, and PtO2 sub

245 bar increased 6-8-fold when the average iron carbide size decreased from 7 to 2 nm, while methane and

246 c amine system could be regenerated by using carbide slag as the regeneration agent and could still s

247 f 200 N was delivered by means of a tungsten carbide spherical indenter (r = 3.18 mm), emulating occl

248 palladium (Pd), and gold (Au); the low-cost carbide substrate includes tungsten carbides (WC and W(2

249 graphene nanoribbons on a templated silicon carbide substrate prepared using scalable photolithograp

250 By supporting a metal monolayer on a carbide substrate, these bimetallic surfaces exhibit sim

251 illars etched into a semi-insulating silicon carbide substrate.

252 Another promising aspect is that the carbide substrates often promote the formation of small,

253 single crystalline graphene grown on silicon carbide substrates to flexible polycarbonate track etche

254 apacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbo

255 ounts of precious metals on transition metal carbide substrates.

256 of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of a

257 aper we describe the synthesis of molybdenum carbide supported platinum (Pt/Mo(2)C) catalysts and the

258 thesis, characterization, and utilization of carbide-supported metal surfaces in heterogeneous cataly

259 discuss opportunities for future research on carbide-supported metal surfaces.

260 irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a

261 Specifically, the silicon carbide surfaces are hydrophilic with hydroxyl terminati

262 that the metal ML-supported transition metal carbide surfaces exhibit HER activity that is consistent

263 method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned

264 trinsic HER activity of bare and Pt-modified carbide surfaces.

265 and muB with a slope of 12.81 T/muB for iron carbide systems and that the proportionality constant ma

266 Two-dimensional transition metal carbides (termed MXenes) are a new family of compounds g

267 re significantly more endergonic on tungsten carbide than on platinum.

268 rt with carbon-both through the interstitial carbide that resides in the central cavity of its cofact

269 s a platform for these studies, single-phase carbide thin films with well-characterized surfaces have

270 re, the metal atoms from the ternary layered carbides, Ti3 AlC2 , Ti2 AlC and Ti3 SiC2 (MAX phases).

271 by etching aluminium from titanium aluminium carbide (Ti3AlC2, a 'MAX' phase) in concentrated hydrofl

272 electrodes made of two-dimensional titanium carbide (Ti3C2, a member of the 'MXene' family), produce

273 rial properties of micrometer-thick titanium carbide (Ti3C2Tx) MXene membranes prepared by filtration

274 water and C1 molecules over transition metal carbide (TMC) and metal-modified TMC surfaces and thin f

275 Transition-metal carbides (TMCs) exhibit catalytic activities similar to

276 ture leads to a stable conversion of silicon carbide to diamond-structured carbon with an average cry

277 Solid-state (13)C NMR studies show the carbide to have a much larger chemical shift anisotropy

278 milar bulk electronic properties of tungsten carbides to Pt, as is supported by density functional th

279 e bond C--H in THF by titrating the terminal carbide Tp'(CO)(2)W triple bond C--Li with 2-benzylpyrid

280 ium reagents to provide the anionic terminal carbide Tp'(CO)(2)W triple bond C--Li; a downfield reson

281 The terminal carbide Tp'(CO)(2)W triple bond C-Li adds electrophiles

282 cific surface area due to nitridation of the carbide under the reaction conditions.

283 synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigah

284 onolithically integrated on a single silicon carbide wafer.

285 e in-suit growth process of the primary M7C3 carbide was observed by confocal laser microscope (CLM).

286 Carbon-supported tungsten carbide (WC) and molybdenum tungsten carbide (Mo(x)W(1-x

287 low-cost carbide substrate includes tungsten carbides (WC and W(2)C) and molybdenum carbide (Mo(2)C).

288 ise a range of compositions, including metal carbides (WC), sulfides (MoS2 ), phosphides (Ni5 P4 , Co

289 ng spectroscopy of graphene grown on silicon carbide, we directly observed the discrete, non-equally-

290 ining largely debris of silicon, and silicon carbide, which is a common cutting material on the slici

291 nt pathway was revealed for the insertion of carbide, which signifies a novel biosynthetic route to c

292 deposition (CVD) or via reduction of silicon carbide, which unfortunately relies on the ability to fo

293 -photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure.

294 we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers.

295 In this work, tungsten carbide with tube-like nanostructures (WC NTs) supported

296 rapping of hydrogen within the core of these carbides with quantitative composition profiles.

297 he metallic conductivity of transition metal carbides with the hydrophilic nature of their hydroxyl o

298 sional graphitic carbon nitride and titanium carbide (with MXene phase) nanosheets, display outstandi

299 al parameters of a previously reported metal carbide, Y(2)C(3) are directly compared to the (Y(2)C(2)

300 Here we design and fabricate a carbide (Zr0.8Ti0.2C0.74B0.26) coating by reactive melt