ライフサイエンスコーパス: charge carrier

1 ost exclusively on electrons as the dominant charge carrier.

2 ic) time-dependent evolution of the injected charge carrier.

3 nsible for pHo sensitivity when Na(+) is the charge carrier.

4 sible for pHo sensitivity when Ca(2+) is the charge carrier.

5 rent density when examined with BaCl2 as the charge carrier.

6 ngly affects the pathways of mobility of the charge carrier.

7 tation, transport and trapping events of the charge carriers.

8 nhances the separation of the photogenerated charge carriers.

9 dispersion relation and its chiral nature of charge carriers.

10 n by physically separating hole and electron charge carriers.

11 band gap and thus localizes potential mobile charge carriers.

12 ecombination kinetics typical of dissociated charge carriers.

13 eparation, recombination and/or transport of charge carriers.

14 chemical properties imparted by their excess charge carriers.

15 wn aqueous ion batteries employ metal cation charge carriers.

16 otube excitonic transitions can produce free charge carriers.

17 , such as cyclotron mass and lifetime of its charge carriers.

18 y depleted that the TOrCs are transported as charge carriers.

19 screening of the Coulomb interaction between charge carriers.

20 " of the energy of two excitons into the hot charge carriers.

21 y the density and mobility of photogenerated charge carriers.

22 o the electrode via the enhanced mobility of charge carriers.

23 which can drive the photogeneration of free charge carriers.

24 conduction pathways and the distribution of charge carriers.

25 ng, suggesting strong interlayer coupling of charge carriers.

26 ng source for optical phonons as well as for charge carriers.

27 kets, offering a valley degree of freedom to charge carriers.

28 arvesting and the transfer of nonequilibrium charge carriers.

29 the Dirac fermionic nature for both types of charge carriers.

30 tors generates trapping states that localize charge carriers.

31 or slow long-range diffusion of liquid-phase charge carriers.

32 tional modelling indicates that photoexcited charge carriers accumulated at the surface destabilize t

33 We find that due to the charge carrier accumulation, the static conductivity may

34 on nanostructures are easily charged but how charge carriers affect their structural stability is unk

35 Here we map the nanoscale charge carrier and elemental distribution of mixed perov

36 ed to hyperfine coupling of the spins of the charge carriers and hydrogen nuclei.

37 lications, the ability to vary the nature of charge carriers and so create either electron donors or

38 has been attributed to the existence of free charge carriers and their large diffusion lengths, but t

39 lators often exhibit symmetry breaking where charge carriers and their spins organize into patterns k

40 eading to efficient conversion of photons to charge carriers and to hybrid materials with a wide vari

41 additional laser pulse to optically generate charge carriers, and carefully design temporal sequence

42 ergy storage devices using potassium-ions as charge carriers are attractive due to their superior saf

43 me scales of generation and recombination of charge carriers as well as their transport properties in

44 unctionalities: exciton dissociation to free charge carriers at the heterojunction formed on the s-SW

45 odes orbit decreases in diameter pulling the charge carriers away from the surface.

46 The charge-carrier balance strategy by interface engineering

47 ing the transfer of a well-defined number of charge carriers between the island and the reservoirs, s

48 Any remaining charge carriers bind to the protein as the final solvent

49 f the initial protein charge and the mode of charge carrier binding.

50 ere, we show that the screening of band-edge charge carriers by rotation of organic cation molecules

51 Here, we show how to manipulate the charge carriers by using a circular p-n junction whose s

52 orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junct

53 power measurements we show that the dominant charge carriers change from holes to electrons as the nu

54 n CH3 NH3 PbI3 perovskite films enhances the charge carrier collection efficiency of solar cells lead

55 ge carrier recombination, and enhancement in charge carrier collection result in a greatly increased

56 to form the necessary continuous phases for charge carrier collection.

57 tructure and defect concentration, including charge carrier concentration and electronic conductivity

58 e ability to modulate the band structure and charge carrier concentration by substituting specific ca

59 confinement of the Ca layer and the induced charge carrier concentration in graphene.

60 one of the most important methods to control charge carrier concentration in semiconductors.

61 d borophene, are all metallic with high free charge carrier concentration, pointing toward the possib

62 ng for novel states of matter in the extreme charge-carrier-concentration limit.

63 it reduced thermal conductivities and higher charge carrier concentrations and mobilities than PbS na

64 s (A=Ca, Sr, Eu, Yb) are found to have large charge carrier concentrations that increase with increas

65 ithin a crystalline matrix can provide large charge carrier concentrations without strongly influenci

66 he few-layer PdSe2 display tunable ambipolar charge carrier conduction with a high electron field-eff

67 the switching speed, which is limited by the charge carrier cooling time, on the order of picoseconds

68 dimensional degenerated gas of highly mobile charge carriers could be formed at the wall.

69 ling excellent optical absorption, increased charge carrier density and accelerated surface oxidation

70 The lasing threshold corresponds to a charge carrier density as low as 1.5 x 10(16) cm(-3).

71 destructive approximation of substrate added charge carrier density using contact angle measurements.

72 We find that when creating a high charge carrier density, the energy is efficiently transf

73 Linear changes in Fermi level vs charge-carrier density are observed for each ensemble of

74 e and Mott-Schottky plots reveal that higher charge-carrier density owing to N2H4 reduction contribut

75 This results in a unique system in which the charge carrier depends on the backbone length, and provi

76 Charge carrier diffusion coefficient and length are impo

77 o the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometer

78 hieve dynamic two-dimensional mapping of the charge-carrier distribution in poly(3-hexylthiophene) th

79 ed via the dielectric environment as well as charge carrier doping.

80 ped polymers, they are generated by separate charge-carrier doping and compensation steps, which enab

81 nduced current, it does not appear to be the charge carrier during 5-HT transport.

82 en deposition pressure (20-300 mTorr) on the charge carrier dynamics and optical constants of the thi

83 etermining the optoelectronic properties and charge carrier dynamics can provide valuable insight tow

84 Charge carrier dynamics in amorphous semiconductors has

85 imaging technique in the study of ultrafast charge carrier dynamics in heterogeneously patterned mic

86 develop a simple, quantitative model for the charge carrier dynamics in these photocatalysts, which i

87 ations to provide insightful outlooks on the charge carrier dynamics.

88 elucidate the role of heterovalent doping on charge-carrier dynamics and energy level alignment at th

89 sensitive to the QCP, implying a significant charge carrier effective mass enhancement at the doping-

90 n of coherent phonon pairs, and diffusion of charge carriers - effects operating at vastly different

91 hts to selectively choose the photogenerated charge carriers (either electrons or holes) passing thro

92 Charge carriers (electrons) were added to ZnO nanocrysta

93 nO behaves like a 2D semiconductor, in which charge carriers electrostatically induced by the back ga

94 ate separation and migration of photoinduced charge carriers, enhance the adsorption and concentratio

95 Here, we report imaging of charge carrier excitation, transport, and recombination

96 interaction of the MWIR signal with the free charge carrier excited by the pump.

97 This shows that charge carriers excited deeper in the bulk contribute to

98 ctronic structure of superlattices such that charge carriers experience effectively no magnetic field

99 The interaction between the charge carriers flowing inside graphene and the plasmons

100 vesting pigment needed for the generation of charge carriers for the production of electricity.

101 able fast reversible insertion/extraction of charge carriers (for example, lithium ions).

102 In band-like semiconductors, charge carriers form a thermal energy distribution rapid

103 onal p-n junctions, regions depleted of free charge carriers form on either side of the junction, gen

104 Free charge carriers form within a 200 fs excitation pulse, t

105 nductors, the transfer of a rather localized charge carrier from one site to another triggers a defor

106 polymers may result from the percolation of charge carriers from conducting ordered regions through

107 nse is attributed to the combination of bulk charge carriers from interband transitions and surface c

108 spectra from the plasmonic resonances due to charge carriers generated from defect states within the

109 ight trapping cells, we show that the higher charge carrier generation and collection in this design

110 Understanding the enhancement of charge carrier generation and their diffusion is imperat

111 m the Au NPs to the CdSe QDs, which enhances charge-carrier generation in the semiconductor and suppr

112 entified as the major rate-limiting step for charge carriers' generation.

113 ated materials previously, the nature of the charge carriers has not been determined.

114 polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and ineq

115 A charge carrier in a lead halide perovskite lattice is pr

116 -1/2 excitation, is the fundamental negative charge carrier in pi-conjugated organic materials.

117 s the preference of Arg over Lys as a mobile charge carrier in voltage-sensitive ion channels.

118 rlie the preference for arginine as a mobile charge carrier in VSD.

119 The dispersion of charge carriers in a metal is distinctly different from

120 ently determine both density and mobility of charge carriers in a perovskite film by the use of time-

121 alous decrease in the scattering rate of the charge carriers in a pseudogap-like region of the temper

122 any aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorl

123 was possible to estimate the energies of the charge carriers in different bands.

124 Charge carriers in graphene behave like massless Dirac f

125 out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon

126 tronic band-structure picture for describing charge carriers in hybrid perovskites.

127 Cyclotron motion of charge carriers in metals and semiconductors leads to La

128 Understanding the nature of charge carriers in nanoscale titanium dioxide is importa

129 provide evidence of the polaronic nature of charge carriers in PV perovskites.

130 e sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature.

131 Here we demonstrate that charge carriers in single-molecule junctions can be tune

132 The nature of the charge carriers in SPT surface states is intimately tied

133 The total amount of charge carriers in the experiment is of the order of 10(

134 e description of the interaction between the charge carriers in the GNRs and the piezoelectric fields

135 2) domains, and the trapping of photoexcited charge carriers in the localized states in sp(3) domains

136 eriment indicates that the mean free path of charge carriers in the nanoribbons amounts to typically

137 ing because of the long spin lifetime of the charge carriers in the organic materials and their low c

138 y biased towards the excitation of energetic charge carriers in the Pt shell.

139 n TiO2 to or from Au occurs via transport of charge carriers in the semiconductor TiO2 support.

140 find that the mass enhancement of itinerant charge carriers in the strongly correlated band is drama

141 capture and emission rates of deeply trapped charge carriers in the substrate-semiconductor-metal reg

142 Electron-phonon interactions of free charge-carriers in doped pi-conjugated polymers are conc

143 ntrol of optical Anderson localization using charge carriers injected into more than 100 submicrometr

144 Na(+) ions served as surrogate charge carriers instead of H(+).

145 Establishing how charge carriers interact with phonons in these materials

146 signatures associated with injecting a free charge carrier into a QD under equilibrium conditions, i

147 itals can lead to the injection of energized charge carriers into the adsorbate, which can result in

148 s relies on energy band offsets that confine charge carriers into the core region, potentially reduci

149 and hole pairs, called excitons, and unbound charge carriers is a key cross-cutting issue in photovol

150 erroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, includi

151 ngth of excitons and the extraction yield of charge carriers is presented based on the performance of

152 The results show that the collection of charge carriers is strongly dependent on the electronic

153 Electrically controlling the flow of charge carriers is the foundation of modern electronics.

154 The charge carrier lifetime increased upon reversing the app

155 The charge carrier lifetime of Sr(2+) -containing perovskite

156 45%, correlated to a three-fold increase in charge carrier lifetime.

157 s of improving charge-selective contacts and charge carrier lifetimes in perovskites via processes su

158 pplied potentials indicate a decrease in the charge carrier lifetimes of CsPbBr3 as we increase the p

159 correlated with high crystal quality, longer charge carrier lifetimes, and high PL yields and was rat

160 re observed over timescales competitive with charge carrier lifetimes.

161 ransport characteristics, including multiple charge carriers, logarithmic dependence of resistance on

162 tielectron system, utilizing molecular based charge carriers, made from inexpensive, abundant, and su

163 electronic Fermi surface and the associated charge carrier mass, as the Mott transition is approache

164 the direct evidence of multichannel-improved charge-carrier mechanism to facilitate electron-hole tra

165 ts, thereby providing a path for exciton and charge carrier migration.

166 Charge carrier mobilities as large as 6.1 cm(2) V(-1) s(

167 The impact of molecular structure on charge carrier mobilities in field effect transistors an

168 Average charge carrier mobilities in field-effect transistors ar

169 trochemical, and photovoltaic properties and charge carrier mobilities of these polymers is discussed

170 t the optimum blend ratio, devices show high charge carrier mobilities, while mismatched hole and ele

171 terms of experimentally measured high local charge-carrier mobilities and energy cascades due to mol

172 Phonon scattering limits charge-carrier mobilities and governs emission line broa

173 lls is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifeti

174 microstrain along with a twofold increase in charge-carrier mobilities leading to values exceeding 20

175 FAPbBr3 and FAPbI3 exhibit charge-carrier mobilities of 14 and 27 cm(2) V(-1) s(-1)

176 e delineated between solar-cell performance, charge-carrier mobilities, and morphology in a highperfo

177 lycrystalline materials, which supports high charge-carrier mobilities.

178 esistivity at 0.034 Omega.cm and respectable charge carrier mobility (14.9 cm(3)/V.s) and concentrati

179 Given their high charge carrier mobility and excellent photostability, SW

180 The integration of high charge carrier mobility and high luminescence in an orga

181 r absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic s

182 al of attention due to their relatively high charge carrier mobility and low resistivity.

183 However, charge carrier mobility and photo-stability in currently

184 urements is used to reconstruct the complete charge carrier mobility distribution for the photogenera

185 A larger improvement of charge carrier mobility for the more linear backbones wa

186 ormance to reduced bulk defects and improved charge carrier mobility in large-grain devices.

187 Achieving high charge carrier mobility in these films requires the iden

188 ity of domain boundaries are demonstrated by charge carrier mobility measurements, scanning electron

189 r to correlate the measured orientation with charge carrier mobility measurements.

190 ties using quantum chemical calculations and charge carrier mobility measurements.

191 onducting polymer blends provides an average charge carrier mobility of 0.4 cm(2) V(-1) s(-1) and cur

192 a direct bandgap of 1.56 eV and a very high charge carrier mobility of 4.3 x 10(3) cm(2) V(-1) s(-1)

193 Using this method, the charge carrier mobility of C8 -benzothieno[3,2-b]benzoth

194 ge carrier recombination within PSCs and low charge carrier mobility of disordered organic materials.

195 dipole moment and their relaxation and (iv) charge carrier mobility of graphene that modulated the e

196 As a consequence of the low charge carrier mobility of present printable organic and

197 The high charge carrier mobility of the Si microparticles allows

198 iton oscillator strength, however, their low charge carrier mobility prevent their use in high-perfor

199 The resulting charge carrier mobility strongly depends on both the deg

200 to how nonbonding interactions can influence charge carrier mobility through changes in secondary str

201 Record high room temperature charge carrier mobility up to 52 cm(2)/Vs and ultra-shar

202 a new method to achieve large modulation of charge carrier mobility via channel doping without disru

203 escence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of

204 organic species at the grain boundaries, low charge carrier mobility, and decreased electron injectio

205 including improved solid-state packing, high charge carrier mobility, and improved charge separation.

206 y can also be correlated to anisotropic bulk charge carrier mobility, suggesting general importance o

207 ic devices are to a great extent dictated by charge carrier mobility.

208 do not benefit from further improvements in charge carrier mobility.

209 iconductors, which significantly reduces the charge carrier mobility.

210 4 x 10(14) cm(-3) ), and unprecedented 9 GHz charge-carrier mobility (71 cm(2) V(-1) s(-1) ), is demo

211 uence of defects on electronic structure and charge-carrier mobility are predicted by calculation and

212 H3 NH3 PbBr3 single crystals reveal that the charge-carrier mobility follows an inverse-temperature p

213 in 9-AGNRs and revealed their high intrinsic charge-carrier mobility of approximately 350 cm(2).V(-1)

214 The charge-carrier mobility of organic semiconducting polyme

215 The temperature dependence of the charge-carrier mobility provides essential insight into

216 iciency is observed without reduction in the charge-carrier mobility resulting in radiances of up to

217 z conductivity measurements reveal excellent charge-carrier mobility within individual GNRs.

218 inclusion of such nanocrystals enhances the charge-carrier mobility, and subsequently leads to a red

219 imensional semiconductor-exhibits favourable charge-carrier mobility, tunable bandgap and highly anis

220 stacking interactions and therefore enhanced charge-carrier mobility.

221 he intermolecular aggregates and improve the charge-carrier mobility.

222 sults suggest that the direction and rate of charge-carrier movement regulate the open time of mPanx1

223 Charge carrier multiplication in organic heterojunction

224 plet shrinkage is accompanied by ejection of charge carriers (Na(+) for the conditions chosen here),

225 enerate significant quantities of long-lived charge carriers necessary for chemical reactions.

226 Charge carriers of MoTe2 flakes annealed via RTA at vari

227 riers from interband transitions and surface charge carriers of the topological insulator.

228 g (A) materials have the ability to generate charge carriers on illumination.

229 , time reversal symmetry endows the massless charge carriers on the surface of a three-dimensional to

230 tically different sizes, lipid compositions, charge carriers, or protein machinery.

231 tive elements that promote rapid movement of charge carriers out of a critical recombination range.

232 citon generation-a process in which multiple charge-carrier pairs are generated from a single optical

233 t for optoelectronic applications relying on charge carrier photogeneration.

234 y, the one-dimensional multichannel-improved charge-carrier photosynthetic heterojunction system with

235 es and reveals the complex interplay between charge carrier populations, electronic traps and mobile

236 otential to provide fundamental insight into charge carrier processes in devices, and to enable futur

237 A method to determine the doping induced charge carrier profiles in lightly and moderately doped

238 esonance scheme is based on the detection of charge carriers promoted to the conduction band of diamo

239 l electrical transport that overall suppress charge carrier recombination and improve TiO2 and alpha-

240 rface exert a profound impact on the rate of charge carrier recombination and, consequently, on the d

241 scales is used to investigate photogenerated charge carrier recombination in Si-doped nanostructured

242 the influence of electrochemical bias on the charge carrier recombination process.

243 y loss pathways is due to the photogenerated charge carrier recombination within PSCs and low charge

244 of BHJ thin film morphology, suppression of charge carrier recombination, and enhancement in charge

245 feration accompanying increasing Mn promotes charge carrier recombination, reducing cell fill factors

246 anced performance being rooted in suppressed charge carrier recombination.

247 rom avian magnetoreception to spin-dependent charge-carrier recombination and transport.

248 Bimolecular and Auger charge-carrier recombination rate constants strongly cor

249 water oxidation also contribute to competing charge-carrier recombination with photogenerated electro

250 dation are also the most important sites for charge-carrier recombination.

251 However, extraction of the photo-generated charge carriers remains challenging.

252 al atoms' because the wavefunctions of their charge carriers resemble those of atomic orbitals.

253 ocalized on the core of the cluster in which charge carriers reside before tunnelling to the collecto

254 are consistent with the polaronic nature of charge carriers, resulting from an interaction of charge

255 Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional

256 ing transitions between different regimes of charge carrier scattering.

257 and/or providing type- and energy-dependent charge carrier scattering.

258 Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved the zT t

259 use super-resolution imaging, operated in a charge-carrier-selective manner and with a spatiotempora

260 tem, Ru-CdSe@CdS-Pt, was designed to achieve charge carrier separation and directional transfer acros

261 t electron motion is essential for efficient charge carrier separation preventing their geminate reco

262 bination dynamics and consequently efficient charge carrier separation, providing further evidence fo

263 nic delocalization in real space can dictate charge carrier separation.

264 or several operational pH values (-1 to 15), charge carrier species (H(+), Li(+), Na(+), K(+), Mg(2+)

265 (magnetic-dipolar and spin-exchange) between charge-carrier spin pairs can be probed through the detu

266 implying quantum mechanical entanglement of charge-carrier spins over distances of 2.1+/-0.1 nm.

267 the electronic properties of low-dimensional charge carrier systems such as graphene nanoribbons (GNR

268 to an energy gain involving the photoexcited charge carriers that are transiently populated in the co

269 However, the chiral nature of the charge carriers that is responsible for the high mobilit

270 al transport and optoelectronic processes of charge carriers, the piezo-phototronic effect is applied

271 , links between the rate of recombination of charge carriers, their energetic distribution and the mo

272 ing meta-atoms and/or changing the number of charge carriers through electrical gating.

273 hanism to self-regulate the concentration of charge carriers through ionic compensation of charged po

274 s the possibility to control the spin of the charge carriers through the resulting hybrid molecule/me

275 es polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperatur

276 With appropriate selection of the charge carrier, transfer of a single electron to the car

277 hich allows determining the range over which charge carriers transferred from plasmonic hot spots can

278 i stacking alignment, which are favorable to charge carrier transport and hence suppress recombinatio

279 The possibility to selectively modulate the charge carrier transport in semiconducting materials is

280 The charge carrier transport in the fabricated GNRs was stud

281 Charge carrier transport through organic solar cells is

282 rmal, thus providing an optimal geometry for charge carrier transport.

283 scuss the impact of CT exciton generation on charge-carrier transport and on the efficiency of photov

284 structured photoanodes benefiting from small charge-carrier transport distances.

285 ary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the i

286 face engineering is employed to optimize the charge-carrier transport in inverted planar heterojuncti

287 on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowire

288 toresponse due to the different photoexcited-charge-carrier trapping times in sp(2) and sp(3) nanodom

289 We demonstrate that the formation of charge carrier traps at the interface can dominate the d

290 aphically patterned exfoliated graphene, the charge carriers travel only about ten nanometres between

291 cal Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial

292 tering, or hydrodynamic collective motion of charge carriers, typically pronounced only at cryogenic

293 In thicker films, charge carriers were rapidly transferred to iodide-rich

294 ated unique electronic properties, thanks to charge carriers which mimic massless relativistic partic

295 ated unique electronic properties, thanks to charge carriers which mimic massless relativistic partic

296 , have extremely high concentrations of free charge carriers, which allows them to exhibit LSPR at ne

297 in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions o

298 y the redox potentials of the photogenerated charge carriers, which selectively alter the cellular re

299 of a semiconductor to accept or release the charge carriers with a corresponding change in its Fermi

300 generates a gap on the surface, resulting in charge carriers with finite effective mass and exotic sp