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1 LG) synthesized by microwave plasma enhanced chemical vapor deposition.
2 ere then synthesized from these templates by chemical vapor deposition.
3 f large-area graphene films prepared through chemical vapor deposition.
4 0.87 +/- 0.05 eV) than similar films made by chemical vapor deposition.
5 ielectric substrates using a low temperature chemical vapor deposition.
6 ) core-shell hybrid foam is fabricated using chemical vapor deposition.
7 o be used as a higher-quality alternative to chemical vapor deposition.
8 nanotubes (CNTs) in water-assisted catalytic chemical vapor deposition.
9 es resembling pine trees were synthesized by chemical vapor deposition.
10 ce thin film conformality in low temperature chemical vapor deposition.
11 m in GaN epilayers prepared by metal-organic chemical vapor deposition.
12 homoepitaxially grown on MoS2 monolayer via chemical vapor deposition.
13 ce of loading effect commonly encountered in chemical vapor deposition.
14 ructure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition.
15 aligned CNTs are grown on metal wires after chemical vapor deposition.
16 nolayer MoS2 grown on silicon oxide by using chemical vapor deposition.
17 deposition was performed by plasma-enhanced chemical vapor deposition.
18 bilayers and single layer graphene grown by chemical vapor deposition.
19 licon solar cell, deposited by high-pressure chemical vapor deposition.
20 loys Mox W1-x S2y Se2(1-y) is reported using chemical vapor deposition.
21 e standing graphene on 4H-SiC(0001) grown by chemical vapor deposition.
22 verage with single-layer graphene, formed by chemical vapor deposition.
23 nthesized by a novel method of super-cooling chemical-vapor-deposition.
24 aynoethylenecarboxylate) via low-temperature chemical vapor deposition (50 degrees C) is reported.
26 125 to 650 degrees C using aerosol-assisted chemical vapor deposition (AACVD) with pyridine as the s
28 otubes via arc discharge, laser ablation and chemical vapor deposition and functionalizing carbon nan
30 ed with 50-250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with e
31 y the SPR signal by growing graphene through chemical vapor deposition and, second, to control the im
33 of the graphene-catalyst interaction during chemical vapor deposition are investigated using in situ
34 ing diodes, and diamond films fabricated via chemical vapor deposition are the most popular organic b
35 on large-area monolayer graphene produced by chemical vapor deposition are used for label-free electr
36 t-Co alloyed nanocatalysts are generated via chemical vapor deposition-assisted facile one-pot synthe
37 films of Ge(1-x)Sn(x) alloys are created by chemical vapor deposition at 350 degrees C on Si(100).
38 The reaction of Ti(NMe(2))(4) with SiH(4) in chemical vapor deposition at 450 degrees C yielded thin
39 ynthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 de
40 presented, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, fro
41 carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper b
42 trate how combinatorial atmospheric pressure chemical vapor deposition (cAPCVD) can be used as a synt
46 re of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is c
47 multiwall carbon nanotubes (CNTs) by thermal chemical vapor deposition (CVD) and graphitization of so
48 ms grown on surface-passivated Si wafers via chemical vapor deposition (CVD) and microstructured usin
49 boron nitride (h-BN) films are prepared from chemical vapor deposition (CVD) and readily transferred
50 s) with p- and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to constru
51 rge-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and
52 molybdenum disulfide (MoS2 ) synthesized by chemical vapor deposition (CVD) are studied using a loca
53 The zeolite-like carbons are prepared via chemical vapor deposition (CVD) at 800 or 850 degrees C
56 s of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source pre
60 ew observations of the mechanisms underlying chemical vapor deposition (CVD) growth of fibrous carbon
62 Thus, direct control over the product during chemical vapor deposition (CVD) growth of SWNT is desira
64 layers were grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner wit
65 a pyrolytic carbon nanoelectrode obtained by chemical vapor deposition (CVD) inside a quartz nanopipe
67 nt process temperatures in a plasma-enhanced chemical vapor deposition (CVD) is demonstrated using mu
71 uniform single-layer WS2 film by a two-step chemical vapor deposition (CVD) method followed by a las
74 ide (Fe(3)B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon
75 rface of catalytically activated silica by a chemical vapor deposition (CVD) method using hexane as t
79 opically engineered spacer layer prepared by chemical vapor deposition (CVD) of functional polymers.
80 bly on single-wall and multi-wall CNTs using chemical vapor deposition (CVD) of methane without the p
81 tworks by forming hydrophobic barriers using chemical vapor deposition (CVD) of trichlorosilane (TCS)
82 ved in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common s
83 graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrat
84 oncentric tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates,
85 rted by substrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent ther
86 es of graphene nanoribbon (GNR) formation by chemical vapor deposition (CVD) on top of Au(111) surfac
87 growth of single layers can be done also by chemical vapor deposition (CVD) or via reduction of sili
92 lylene-co-p-xylylene), which are prepared by chemical vapor deposition (CVD) polymerization of the co
94 strate, poly-p-xylylene coatings prepared by chemical vapor deposition (CVD) polymerization, for surf
95 ssembled by a unique, single-step, catalytic chemical vapor deposition (CVD) process consisting of di
98 ate, followed by carbon deposition through a chemical vapor deposition (CVD) process with methane as
101 ithic and macroporous graphene foam grown by chemical vapor deposition (CVD) served as the scaffold o
102 ibbons of carbon nanotubes directly from the chemical vapor deposition (CVD) synthesis zone of a furn
105 sferring graphene synthesized using scalable chemical vapor deposition (CVD) to polycarbonate track-e
106 the direct growth of carbon nanotube tips by chemical vapor deposition (CVD) using ethylene and iron
108 mically inert CNT arrays were synthesized by chemical vapor deposition (CVD) using thin films of Fe a
110 large flakes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers a
111 nar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conv
112 spheric pressure, by direct deposition or by chemical vapor deposition (CVD), without the use of hydr
120 in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking conf
121 able fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage
123 e films were deposited by microwave-assisted chemical vapor deposition, for 1-2 h, using a 0.5% CH4/H
124 s were deposited as a thin film by catalytic chemical vapor deposition from either CO or C2H4 as the
125 f nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic re
126 s and open up directions for applications of chemical vapor deposition graphene on flexible substrate
127 xplore the direct transfer via lamination of chemical vapor deposition graphene onto different flexib
128 fabricated on oxidized silicon wafers using chemical vapor deposition grown carbon nanotubes that we
132 boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boro
136 orbent film synthesized from C2H4-CVD (CVD = chemical vapor deposition) had higher CNT density and th
138 propargyl methacrylate) (PPMA) via initiated chemical vapor deposition (iCVD) and poly(allylamine) (P
139 stics is demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of t
140 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures usin
141 n nanofibers (CNFs) grown by plasma enhanced chemical vapor deposition is found to be effective for t
152 reference electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS proced
156 icrowires were first synthesized by a simple chemical vapor deposition method using Na as the dopant
161 The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred t
162 Ga(Sbx)N1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen pro
163 ting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been s
165 substrates at 410 degrees C by metal-organic chemical vapor deposition (MOCVD), and their phase struc
168 tube membranes (CNMs) were prepared by doing chemical vapor deposition of carbon within the pores of
169 d coated Si/SiO(2) surfaces is reported from chemical vapor deposition of Cd[(TeP(i)Pr(2))(2)N](2).
170 finding opens up a new avenue for controlled chemical vapor deposition of crystals through resonant v
173 position of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin f
175 , low-energy electron irradiation during the chemical vapor deposition of model Ziegler-Natta catalys
176 onded phases and carbon surfaces prepared by chemical vapor deposition of organic compounds on porous
177 que may be general and should facilitate the chemical vapor deposition of other oxide and nitride mat
178 ad sulfide (PbS) nanowire "pine trees" using chemical vapor deposition of PbCl(2) and S precursors an
179 a DNA nanostructure can modulate the rate of chemical vapor deposition of SiO2 and TiO2 with nanomete
180 de (MnSi(2-x)) with widths down to 10 nm via chemical vapor deposition of the single-source precursor
181 roperties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopan
182 have been synthesized as precursors for the chemical vapor deposition of WN(x)C(y), a material of in
183 p-i-n junction fibers made by high pressure chemical vapor deposition offer new opportunities in tex
184 layer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coat
185 high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always
186 the transfer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers comm
188 uantities of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed se
190 ere fabricated by the growth of BDD films by chemical vapor deposition onto sharpened tungsten wires.
191 the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as
192 cid, BTC) was treated with a plasma-enhanced chemical vapor deposition (PECVD) of perfluorohexane cre
194 tandard photolithography and plasma-enhanced chemical vapor deposition (PECVD) techniques, followed b
195 s (PPFs), often deposited by plasma-enhanced chemical vapor deposition (PECVD), currently attract a g
197 Herein, we demonstrate the usefulness of chemical vapor deposition polymerization for surface mod
202 layer deposition) and MOCVD (= metal-organic chemical vapor deposition) processes in materials scienc
203 noribbons, and large graphene films grown by chemical vapor deposition showed p-type doping accompani
204 he suitability of current techniques such as chemical vapor deposition, spray and dip coating, and va
207 ar reactions of silicon nitride diatomics in chemical vapor deposition techniques and interstellar en
208 n doped diamond grown using microwave plasma chemical vapor deposition techniques is found to be idea
209 nanofibers were grown using plasma enhanced chemical vapor deposition to fabricate nanoelectrode arr
210 udy develops a new growth strategy employing chemical vapor deposition to grow monolayer 2D alloys of
211 ynthesized previously by electrically-heated chemical vapor deposition under vacuum conditions were r
213 eposited on undoped Si by microwave-assisted chemical vapor deposition using a 4-h growth with a 0.5%
214 hieved by means of microwave plasma-assisted chemical vapor deposition using in-situ-evaporated Fe ca
216 mperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs ar
217 ividual SWNTs grown on SiO2/Si substrates by chemical vapor deposition with and without metal contact
218 pare fluorine doped tin oxide (FTO) films by chemical vapor deposition with inclusions of different a
219 single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any
220 raphene (NG) sheets via atmospheric-pressure chemical vapor deposition, yielding a unique N-doping si
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