ライフサイエンスコーパス: dielectric

1 st-promising van der Waals semiconductor and dielectric.

2 that can propagate on the surface of a polar dielectric.

3 c gel layer which plays the role of the gate dielectric.

4 l field at the junction of a conductor and a dielectric.

5 s incorporated into InGaZnO TFTs as the gate dielectric.

6 face and in contact with a variety of liquid dielectrics.

7 r high-temperature polymer and nanocomposite dielectrics.

8 t value measured for known high-permittivity dielectrics.

9 tematically: semiconductors, conductors, and dielectrics.

10 semiconductor microinclusions in insulating dielectrics.

11 f the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room tempe

12 Freestanding, single-component dielectric actuators are designed based on bottlebrush e

13 rom compliant conductors, semiconductors, to dielectrics, all of which play a vital and cohesive role

14 se results are robust to the choice of polar dielectric, allowing potentially versatile implementatio

15 the need of the physical gate electrode and dielectrics altogether using a synthetic tube-in-a-tube

16 20 nm) devices with a thin, high-kappa gate dielectric and a 9-atom wide (0.95 nm) armchair graphene

17 i-layer stacks consisting of active channel, dielectric and conductive contact layers.

18 ucture, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force m

19 Ba(Zr0.2,Ti0.8)O3 films also show excellent dielectric and energy storage performance over a broad f

20 e potential to be very strong due to the low dielectric and low water environment of the membrane, th

21 Their dielectric and piezoelectric characteristics peak near x

22 ectronics due to defects generated in common dielectric and substrate materials.

23 adiation hardness of WSe2, but rather by the dielectric and substrate.

24 , we report the discovery that the microwave dielectric and the optical characteristics of an EC cell

25 nlothroline)2SeO4.(diol) exhibit significant dielectric and/or ferroelectric dependence on different

26 sduction of discrete recognition events into dielectric and/or ferroelectric signals.

27 The follow-on work on 2D dielectrics and semiconductors has led to the emergence

28 The conductivity, carrier mobility, dielectric, and luminescence properties of optically pat

29 2-diol just show small temperature-dependent dielectric anomalies and no reversible polarization, whi

30 e-1,3-diol shows giant temperature-dependent dielectric anomalies as well as ferroelectric reversible

31 Because these waveguide-based artificial dielectrics are low loss, inexpensive, and easy to fabri

32 Polymer dielectrics are the preferred materials of choice for po

33 as using different solutions, various oxide dielectrics as the sensing layer and off-the-shelf versu

34 m polarization along the crystal's principal dielectric axis X.

35 tomization of arsane in a 17 W planar quartz dielectric barrier discharge (DBD) atomizer was optimize

36 Dielectric barrier discharge (DBD)-based analytical appl

37 nature and in laboratory environment such as dielectric barrier discharge (DBD).

38 e low temperature plasma probe (LTP) and the dielectric barrier discharge for soft ionization (DBDI).

39 rvations of side discharges in a filamentary dielectric barrier discharge from both numerical simulat

40 Dielectric barrier discharge ionization-mass spectrometr

41 per provide a simple and flexible format for dielectric barrier discharge to create atmospheric plasm

42 fications on GSH and GSSG that are caused by dielectric barrier discharge under ambient conditions.

43 ntal characterization of ozone generation in dielectric barrier discharges as a function of the mater

44 n of the material and characteristics of the dielectric barrier, operating frequency and the power co

45 To identify the effect of the dielectric barrier, ozone production curves correspondin

46 ozone production curves corresponding to ten dielectric barriers with different effective thicknesses

47 new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is

48 enerate the Cys(820) thiolate within the low dielectric binding interface and Arg(506) functions to o

49 tic programming to generate simple models of dielectric breakdown based on 82 representative dielectr

50 Understanding the dielectric breakdown behavior of polymer nanocomposites

51 ic materials with desirable permittivity and dielectric breakdown strength potentially meeting the de

52 microC m(-2), which is close to the limit of dielectric breakdown, is attained.

53 able of restoring their properties after the dielectric breakdown.

54 hibit limited durability due to irreversible dielectric breakdown.

55 oles of the insulator by employing localized dielectric breakdown.

56 er, some significant limitations for current dielectrics can be ascribed to their low permittivity, l

57 Specifically, these polar dielectrics can cause emitters to preferentially decay b

58 Dielectric capacitors have the highest charge/discharge

59 findings may enable broader applications of dielectric capacitors in energy storage, conditioning, a

60 The demand for dielectric capacitors with higher energy-storage capabil

61 Dielectric capacitors, although presenting faster chargi

62 o their similar geometric designs based on a dielectric capillary.

63 Microwave dielectric ceramic materials are extensively utilized in

64 future design of high performance microwave dielectric ceramics.

65 reported, however, their microwave tuneable dielectric characteristics have been left somewhat unexp

66 modulation of its high frequency (1-20 GHz) dielectric characteristics.

67 PFM and dielectric characterization are complementary methods wh

68 e is employed to find the binary layout of a dielectric coating that, when wrapped around a metallic

69 guide concept can be extended to other metal/dielectric composites as well, including metal-insulator

70 nstan interconnects and an electrolytic gate dielectric comprised of honey.

71 nt is a remarkable inherent property of high dielectric constant (high-kappa) thin films with far rea

72 tion-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junct

73 shift of the CN stretch as a function of the dielectric constant and is used to estimate the reaction

74 Both dielectric constant and loss factor of almond kernels in

75 The results showed that both dielectric constant and loss factor of the almond kernel

76 A dielectric constant as large as [Formula: see text] is o

77 Solvent-dielectric constant dependence of Phif in dyads gives an

78 s incorporating the electric field dependent dielectric constant in SrTiO3 reveals that a significant

79 In such systems, the dielectric constant is a measure of the relative scale o

80 th high dielectric constants, such as water (dielectric constant of 80).

81 solvents with low polarity, such as hexane (dielectric constant of about 2), can be achieved by deco

82 Exploiting the large dielectric constant of SrTiO3 at low temperatures, tunab

83 nternal strain etc. can be summarized to the dielectric constant or dielectric constant variation ind

84 veloped to best fit the relationship between dielectric constant or loss factor at 27, 40, 915 or 245

85 s too large to be explained by the change in dielectric constant upon addition of urea or glycerol.

86 be summarized to the dielectric constant or dielectric constant variation index, which is of great i

87 y depend on the dielectric constants and the dielectric constant variation index.

88 scopic) viscosity, the refractive index, the dielectric constant, and the ionic strength can be affec

89 tal, even without the negative real value of dielectric constant.

90 stretch frequency red-shifts with increasing dielectric constant.

91 is significantly reduced in solvent of high dielectric constants (DMF), most likely by photoinduced

92 s of hafnium dioxide have exceptionally high dielectric constants and large bandgaps, but quenching t

93 microwave applications because of their high dielectric constants and quality factors.

94 the ceramic mixtures strongly depend on the dielectric constants and the dielectric constant variati

95 aging technique to determine the anisotropic dielectric constants in representative van der Waals cry

96 rsystem crossing rate ratio due to increased dielectric constants leads to almost 50% lower triplet e

97 determination of the polarization-dependent dielectric constants of van der Waals crystals remains a

98 presumably in part because of differences in dielectric constants) and/or conformational differences

99 ged solutes works well in solvents with high dielectric constants, such as water (dielectric constant

100 icability in an example of Er:YAG and Er:YLF dielectric crystals-potential radiation converters for t

101 to understanding and potentially controlling dielectric degradation and breakdown.

102 ion paired transition states in low solvent dielectric (Delta(DeltaDeltaE(double dagger))) was found

103 realise 1-V operation by using conventional dielectrics due to their low gate capacitances and low b

104 mory alloys; ionic-polymer/metal composites; dielectric-elastomer actuators; conducting polymers; sti

105 A hydrogel-dielectric-elastomer system, polyacrylamide and poly(dim

106 ombines direct ink writing of conductive and dielectric elastomeric materials with automated pick-and

107 Electrically deformable surfaces based on dielectric elastomers have recently demonstrated control

108 g the spacing and dimensions of two lossless dielectric elements, which function respectively as a co

109 e can be greatly affected by the surrounding dielectric environment and the grating geometry.

110 hole plasma can be efficiently tuned via the dielectric environment as well as charge carrier doping.

111 wavelength-sized periodic modulation in the dielectric environment for manipulating the electromagne

112 Changing the dielectric environment from air to isopropanol, we obser

113 of the transport gap in CNTs, and show that dielectric environment offers a mechanism for significan

114 we show that by engineering the surrounding dielectric environment, one can tune the electronic band

115 ergy transfer) can be controlled by nonlocal dielectric environments provided by metamaterials with h

116 The contribution of dielectric exclusion to overall ion rejection would be m

117 ms for inorganic ions by steric, charge, and dielectric exclusion.

118 l, thermal gradient, magnetic, electric, and dielectric fields may all be used for continuous SPLITT

119 range of materials, including commonly used dielectric films, and has led to the development of new

120 physical and chemical properties and a high dielectric-fluidity factor, the use of electrolytes base

121 Existing dielectrics for high-energy-storage capacitors and poten

122 b initio linear response computations of the dielectric function allow one to calculate the plasmon f

123 The real and imaginary parts of the dielectric function are investigated, and the results ar

124 sing mechanism relies on the modification of dielectric function of sensing layer upon exposure to xa

125 with ZnO: graphene nanostructures alters the dielectric function of ZnO: graphene nanostructure which

126 a thin film of sputtered aluminum nitride as dielectric gate material.

127 ended to a potential 3D realization with all-dielectric gradient refractive index metamaterials.

128 the giant resonance can be tuned by varying dielectric grating parameters, providing more flexible t

129 dent THz wave are spatially modulated by the dielectric grating to optimize the surface plasmon excit

130 eld and geometry optimization in a monolayer dielectric grating, whereas most of the previous designs

131 -state supercapacitor effect with the high-k dielectric hafnium oxide is demonstrated that allows mod

132 xploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent ba

133 insulators such as industry standard high-k dielectric HfO2 and "green polymer" parylene-C, to condu

134 ating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense

135 parallelism and density of planar-fabricated dielectric integrated optics.

136 OFT) that utilizes strong near-field plasmon-dielectric interactions to measure local forces with a s

137 urface plasmon excitations at a single metal-dielectric interface can perform spatial differentiation

138 dies have demonstrated the benefits of water-dielectric interfaces in electrostatic energy harvesting

139 rough the functionalization of the monolayer/dielectric interfaces, leading to localized electronic s

140 ter a finite writing length in a transparent dielectric is phenomenologically described in terms of t

141 w-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here.

142 n this work, we combine an ultra-thin high-k dielectric layer (Al2O3) with a nanostructured organic f

143 ly backgated devices with an 8-nm-thick HfO2 dielectric layer and chemical-vapor-deposited graphene t

144 l in the FET, with an Al2O3 thin film as the dielectric layer for surface passivation.

145 Quantitative analyses are based on a dielectric layer model that accounts for film swelling a

146 isolated from the fluid in the channel by a dielectric layer, act as active, tunable gates to system

147 ectron ically coupled or insulated by a thin dielectric layer, with an indication of non-trivial vort

148 ctric field is obtained within the remaining dielectric layer.

149 nfigurations with both electrodes covered by dielectric layers can also be realized.

150 er is composed of three metasurfaces and two dielectric layers interlaced with each other.

151 ich transport of silver ions through alumina dielectric leads to bias-induced nucleation and growth o

152 Here, we use dielectric liquids to screen e-e interactions in individ

153 Our hybrid dielectric-loaded nanoridge plasmonic platform may serve

154 tric slab and a metallic substrate, a hybrid dielectric-loaded nanoridge plasmonic waveguide is forme

155 hat integrates hybrid plasmon polariton with dielectric-loaded plasmonic waveguiding.

156 all coke amount is reflected by the obtained dielectric loss (epsilon'') value, where different coke

157 The dielectric loss achieved here is not only with negligibl

158 e terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high

159 field leads to an appreciable tuning of the dielectric loss, which is up to 17%.

160 investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittiv

161 dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature

162 The higher dielectric losses in the c-domain oriented sample are a

163 have a higher coercive field E c and higher dielectric losses than the other which presents approxim

164 Breakdown of a dielectric material at high electric fields significantl

165 at, depending only on [Formula: see text], a dielectric material can transition from localization beh

166 ice structure to graphene, is promising as a dielectric material for a wide variety of potential appl

167 Thus, the implementation of dielectric materials for high-energy-density application

168 t sounds through radiative heating of common dielectric materials like hair, clothing, and leaves.

169 Soft dielectric materials typically exhibit poor heat transfe

170 Various dielectric materials with desirable permittivity and die

171 Dielectric materials with high permittivity are strongly

172 crucial to the design of high-energy-density dielectric materials with reliable performances.

173 Disordered dielectric materials with structural correlations show u

174 mmonly observed in depth profiles of various dielectric materials, if analyzed by time-of-flight seco

175 lectric breakdown based on 82 representative dielectric materials.

176 The experimental findings from dielectric measurement at elevated temperatures demonstr

177 he magnetic-field-dependent polarization and dielectric measurements, qualitatively indicate magnetoe

178 emission spectroscopic data, recorded in low dielectric media, reveal that a long-lived emissive exci

179 dicting vibrational frequency shifts in bulk dielectric media.

180 The artificial dielectric medium consists of a uniformly spaced stack o

181 ed by a charged particle traveling through a dielectric medium faster than the speed of light in that

182 ertz spectral region, based on an artificial dielectric medium that is scalable to a range of desired

183 aster than the phase velocity of light and a dielectric medium, such as water or tissue.

184 refractive index (RI) of the adjacent sample dielectric medium.

185 nificantly limits the applicability of metal-dielectric-metal capacitors for energy storage applicati

186 nonlinear Maxwell equations in an InP-based dielectric metamaterial, considering both two-photon abs

187 Our results have implications on the use of dielectric metamaterials for nonlinear applications such

188 ex of refraction, provide a platform for all-dielectric metamaterials operating at visible frequencie

189 reaking between counter-propagating light in dielectric microresonators.

190 We embedded resonant polar dielectric microspheres randomly in a polymeric matrix,

191 refraction across the interface of two metal-dielectric multilayer metamaterial stacks.

192 cal waves near the Dirac points in the metal-dielectric multilayer metamaterials is theoretically inv

193 Dielectric multilayer structures with a grating profile

194 te the localization of light in a disordered dielectric multilayer with an average layer thickness of

195 t when the nanofibre is placed on a suitable dielectric multilayer, it supports a guided mode, a Bloc

196 rm that the designed SSPDs with non-periodic dielectric multilayers worked well.

197 tween electrons and the near-field mode of a dielectric nano-grating excited by a femtosecond laser p

198 consisting of phased arrays of plasmonic or dielectric nanoantennas can be used to control guided wa

199 ated to contain fluorophores, which make the dielectric nanofibre and multilayer configuration suitab

200 retical investigation of core (metal)-shell (dielectric) nanoparticles for light absorption enhanceme

201 (Pt) and a bi-axial antiferromagnetic (AFM) dielectric (NiO) can be a source of a coherent THz signa

202 tering from a predefined, arbitrarily-shaped dielectric object.

203 les at low volume fractions in an insulating dielectric offers a promising way to reduce radiative th

204 Additional measurements are reported in dielectric oils.

205 ic environment, with metal on one side and a dielectric on the other, the bulk Onsager model is not a

206 We also demonstrate all-dielectric on-chip polarization rotators based on phased

207 Incident ions form an electrode-free, dielectric- or electrolyte-free, bias-free vapor-phase t

208 hotonics, demonstrating that two-dimensional dielectric particles immersed in a two-dimensional epsil

209 orithm is provided and used to obtain sample dielectric permittivity at each frequency point.

210 onstrate gate control of the collapse of the dielectric permittivity at the interface, and explain th

211 r 2D surface mapping and imaging of relative dielectric permittivity for the characterisation of comp

212 r composite materials with spatially varying dielectric permittivity manufactured by 3D printing.

213 The best accuracy of the dielectric permittivity measurements was within 5%.

214 dence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP

215 Microwave dielectric permittivity of the (Na0.5Bi0.5)(Mo0.5W0.5)O4

216 of the methylammonium (MA) component on the dielectric permittivity response.

217 These polarization gradients allow for large dielectric permittivity with low loss (varepsilonr appro

218 ally dependent two dimensional inhomogeneous dielectric permittivity.

219 odern applications require large and tunable dielectric, piezoelectric or pyroelectric response of fe

220 larization from contact electrification with dielectric polarization from a ferroelectric material in

221 ion from triboelectrification and hysteretic dielectric polarization from ferroelectric material in v

222 lysis and the sensitivity of the SRR surface dielectric probe data is described.

223 atial and permittivity resolution of the SRR dielectric probe were controlled by the geometrical para

224 requency of the transmission loss of the SRR dielectric probe when in contact with the surface.

225 rs transduced the signal based on changes in dielectric properties (capacitance) through (i) polariza

226 ulation method for separating SWNTs based on dielectric properties and geometry.

227 an exponential increase in the values of the dielectric properties as a result of the formation of Na

228 The investigation of the evolution of the dielectric properties during the roasting reaction is a

229 ng steps), and separating cells of different dielectric properties inside droplets, all of which are

230 dio frequency (RF) or microwave (MW) energy, dielectric properties of almond kernels were measured by

231 The dielectric properties of an active KTaO3 hybrid metamate

232 The surface dielectric properties of composite materials in the freq

233 low-doped InP material, our data unveil the dielectric properties of InP that are not screened by st

234 During adsorption, variations in the dielectric properties of the adsorbents were monitored u

235 Moreover, dielectric properties vary with temperature and along th

236 ysicochemical properties, including density, dielectric properties, hydrogen bonding, etc.

237 ntent in the films significantly affects the dielectric properties, leakage conduction mechanisms, an

238 nt and computer simulation based on measured dielectric properties.

239 city of adsorbents/adsorbates with different dielectric properties.

240 field to describe a material system and its dielectric properties.

241 Dielectric property of as-grown h-BN film is evaluated b

242 ontribution to the intrinsic barrier via the dielectric relaxation process.

243 e a transformative method for achieving high dielectric response and tunability over a wide temperatu

244 , the relationship between its mechanisms of dielectric response to the microstructure have never bee

245 transitions, strong frequency dependence in dielectric response, and phonon anomalies.

246 By introducing a deep-subwavelength dielectric ridge between a dielectric slab and a metalli

247 t of fitting parameters, it accounts for the dielectric screening arising from ions and electrons sep

248 elocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-m

249 techniques, the transport gap is measured as dielectric screening is increased.

250 sition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to

251 ase at RH > 60%, resulting in high frequency dielectric screening of the film by water and dissociati

252 Dielectric, semiconducting, electrically conducting, and

253 from chemical reactions between NO2 and the dielectric/semiconductor components.

254 This work demonstrates that dielectric/semiconductor interface engineering is essent

255 Using dielectric sensors and an optical fibre-based readout en

256 eep-subwavelength dielectric ridge between a dielectric slab and a metallic substrate, a hybrid diele

257 high-speed microjet of deionized water on a dielectric solid surface.

258 s in nanoscale plasmonic components across a dielectric spacer and through a conductive junction lead

259 orbing metasurface structure consisting of a dielectric spacer layer sandwiched by an array of random

260 a reflective gold layer and two transparent dielectric spacers, also forming a vertical micro-cavity

261 f solid state nuclear magnetic resonance and dielectric spectroscopies, neutron scattering, calorimet

262 cy (300-700 THz) and low frequency (1-8 MHz) dielectric spectroscopy combined with gravimetric measur

263 SMM has the potential for use as a broadband dielectric spectroscopy operating at higher frequencies

264 Outstanding cyclability and dielectric stability over a straight 55 000 charge-disch

265 ic hafnium zirconium oxide layer in the gate dielectric stack.

266 eport Anderson localization in 2D disordered dielectric structures using numerical simulations of the

267 with hyperbolic dispersion and simpler metal/dielectric structures.

268 In few-layer graphene (FLG) systems on a dielectric substrate such as SiO2, the addition of each

269 of electromagnetic waves and permittivity of dielectric substrate, thereby enabling more flexibility

270 ct ways: through substrate interactions with dielectric substrates such as SiO2 and Al2 O3 , or in po

271 from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions betwe

272 distribution of the deposited charge on the dielectric surface between the adjacent electrodes.

273 The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is approximately 400x g

274 GSH) bioreceptor directly immobilized on the dielectric surface.

275 (SAMs) can be formed on (semi-)conductor and dielectric surfaces, and have been used in a variety of

276 re able to quantitatively determine the full dielectric tensors of nanometer-thin molybdenum disulfid

277 t by engineering the substrate geometry, the dielectric thickness and incident angle, the radiation l

278 covery has been observed in samples with the dielectric thickness spanning from 4 to 9 nm.

279 explore the role of a high-refractive-index dielectric TiO2 grating with deep subwavelength thicknes

280 t least one electrode has to be covered by a dielectric to be considered a DBD, configurations with b

281 We show that changing the solvent dielectric to enforce ion pairing to a SbF6(-) counterio

282 e unpaired transition states in high solvent dielectric to ion paired transition states in low solven

283 graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric

284 (13% deviation over 500 degrees C) and high-dielectric tunability (greater than 70% across a 300 deg

285 Here we report dielectric ultracapacitors based on ferroelectric films

286 brid plasmonic device consisting of a planar dielectric waveguide covering a gold nanostripe array fa

287 optical isolation can be obtained within any dielectric waveguide using only a whispering-gallery mic

288 demonstrated highly confined sub-wavelength dielectric waveguide with a low-visibility and broadband

289 g new pathways for future miniaturization of dielectric waveguide-based systems with simultaneous pol

290 ol.Controlling all the optical properties of dielectric waveguides is a challenging task and often re

291 actical way of fabricating metal-nanostripes-dielectric waveguides that can be used as essential elem

292 674 nm from single-mode, high index-contrast dielectric waveguides to free-space beams forming micron

293 er the various electromagnetic properties of dielectric waveguides, including mode confinement, polar

294 ontrolling the diverse optical properties of dielectric waveguides.

295 at multiple different values of the solvent dielectric, we show that the role of the solvent in chan

296 channel could play a more general role as a dielectric well.

297 ct transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GF

298 The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustai

299 ories can be made to propagate in a uniaxial dielectric with a transversely modulated orientation of

300 Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultr

301 s is their capability to form excellent thin dielectrics, yielding rich and unique current-voltage ch