ライフサイエンスコーパス: diode

1 infrared illumination (730 nm light-emitting diode).

2 finger-wearable driver for a light-emitting diode.

3 that acts like a far-field radiative thermal diode.

4 placed in the intrinsic (i) layer of a p-i-n diode.

5 m is used to design an ultra-compact optical diode.

6 approximately 300 nm) from a light-emitting diode.

7 ping process makes the system a good optical diode.

8 munities of photovoltaics and light-emitting diodes.

9 hotoelectrochemical cells and light emitting diodes.

10 ices, such as transistors and light-emitting diodes.

11 ive technologies like organic light-emitting diodes.

12 d '0' by electrically controlling the loaded diodes.

13 icate high-efficiency organic light-emitting diodes.

14 of p-type GaN by VPE for blue light-emitting diodes.

15 vices such as solar cells and light-emitting diodes.

16 ttky diode detectors and existing spintronic diodes.

17 uminated from the bottom with light-emitting diodes.

18 re comparable to those found in modern laser diodes.

19 oward all-electrially pumped injection laser diodes.

20 ance of such promising class of photovoltaic diodes.

21 fects the packing structure of the molecular diodes.

22 (SiO(x)) resistive switching memory with Si diodes.

23 ked SAMs result in well-performing molecular diodes.

24 , coherent perfect absorbers, isolators, and diodes.

25 gn of high efficiency organic light-emitting diodes.

26 cations in many areas such as light-emitting diodes.

27 yer sneak path currents through the built-in diodes.

28 re also used to drive organic light-emitting diodes.

29 ts can be easily improved using higher power diodes.

30 2.0 mum) lasers pumped by GaN light emitting diodes.

31 uned to configure them into switchable ionic diodes.

32 rcussions for TADF in organic light-emitting diodes.

33 A white light-emitting diode (0.33, 0.33) is fabricated using perovskite quantu

34 respectively) presented by 76 light-emitting diodes, 1.8-mm spot size at different locations of a 16.

35 ons of time of two n type cubic GaN Schottky diodes (200 mum and 400 mum diameters) are reported.

36 quasi-2D-structure perovskite light-emitting diodes (4.90 cd A(-1) ) are demonstrated by mixing a 3D-

37 high-speed property gives the light-emitting diodes a high response speed and low dark current, and t

38 ting sources; hydrogenated amorphous silicon diodes acting both as temperature sensors to monitor the

39 In organic light-emitting diodes, an order of magnitude enhancement of the externa

40 C under excitation by a blue light-emitting diode and benefits from the use of a single, Earth-abund

41 stones" for electrons tunnelling across the diode and give rise to a negative differential resistanc

42 sensors, and used to power a light-emitting diode and to charge a storage capacitor.

43 roperties that have delivered light-emitting diodes and lasers.

44 emonstrated by the design of soft mechanical diodes and logic gates.

45 evious experimental realizations of acoustic diodes and mechanical switches have used nonlinearities

46 tions in thin-film transistors, solar cells, diodes and memories.

47 f PA-modified TCOs in organic light-emitting diodes and organic photovoltaics are compared.

48 solar cells and infrared (IR) light-emitting diodes and photodetectors, advances in these chemical tr

49 /acceptor interfaces, such as light emitting diodes and photodetectors.

50 toelectronics and are used in light-emitting diodes and photovoltaics.

51 semiconductor devices, such as transistors, diodes and solar cells.

52 o emulate electronic nano-components such as diodes and transistors.

53 unidirectional optical transmission, optical diode, and so on.

54 ng takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal

55 ications such as solar cells, light-emitting diodes, and displays.

56 er the electronic structure of the molecular diodes, and junctions with loosely packed SAMs result in

57 as solar cells, photodectors, light-emitting diodes, and lasers.

58 as tunneling transistors, resonant tunneling diodes, and light-emitting diodes--are also starting to

59 tude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and win

60 ike field-effect transistors, light-emitting diodes, and solar cells.

61 esonant tunneling diodes, and light-emitting diodes--are also starting to emerge.

62 erformance Liquid Chromatography (HPLC) with diode array (DAD) and fluorescence (FLD) detection was u

63 omatography (HPLC) platform coupled to photo diode array (PDA) and high resolution mass spectrometry

64 ocedure, based on liquid chromatography with diode array and fluorescence detection, has been propose

65 chromatography coupled to refraction index, diode array and fluorescence detector, respectively); ph

66 high-performance liquid chromatography with diode array and fluorescence detectors.

67 optimized liquid chromatographic coupled to diode array and fluorimetric detectors procedure, obtain

68 em based on a single-photon, avalanche photo-diode array and the other system on a time-gated, intens

69 The use of sequential diode array detection (DAD) and tandem mass spectrometry

70 ry liquid chromatography (Cap-LC) coupled to diode array detection (DAD) has the potential to estimat

71 using high-performance liquid chromatography-diode array detection (HPLC-DAD).

72 performance liquid chromatography coupled to diode array detection (HPLC-DAD).

73 For the first time, liquid chromatography-diode array detection (LC-DAD) and liquid-chromatography

74 ified using liquid chromatography coupled to diode array detection and electrospray ionization tandem

75 Liquid chromatography coupled to diode array detection and electrospray ionization tandem

76 rformance liquid chromatography coupled with diode array detection and electrospray-mass spectrometry

77 rformance liquid chromatography coupled with diode array detection and high-resolution accurate-mass

78 ins, (using liquid chromatography coupled to diode array detection, and mass spectrometry with electr

79 erformance liquid chromatography (HPLC) with diode array detection, and vitamin E by HPLC with fluore

80 high-performance liquid chromatography with diode array detection, was developed and validated for t

81 High performance liquid chromatography-diode array detection- tandem mass spectrometry (HPLC-DA

82 using high-performance liquid chromatography-diode array detection-electrospray ionisation multistage

83 ctive high performance liquid chromatography-diode array detection-tandem mass spectrometry (HPLC-DAD

84 high-performance liquid chromatography with diode array detection.

85 Liquid chromatography, coupled to a diode array detector (HPLC-DAD) and a mass spectrometer

86 rformance liquid chromatography coupled to a diode array detector and a mass spectrometer (HPLC-DAD-E

87 liquid chromatography (UHPLC) coupled with a diode array detector and a triple-quadrupole mass spectr

88 rmined by liquid chromatography coupled to a diode array detector and an ultrahigh resolution hybrid

89 s are directly analyzed by HPLC coupled with diode array detector and mass spectrometer if required.

90 Diode array detector was used to monitor vitamin B12, af

91 High Performance Liquid Chromatography with Diode Array Detector), as far as by the colorimetric enz

92 d illuminates the MTP using a light-emitting-diode array.

93 nce liquid chromatography method, coupled to diode-array and fluorescence detectors, with a previous

94 erformance liquid chromatography (HPLC) with diode-array detection (DAD) was developed.

95 high performance liquid chromatography with diode-array detection (HPLC-DAD).

96 high performance liquid chromatography with diode-array detection (HPLC-DAD).

97 gh-performance liquid chromatography with UV diode-array detection was established.

98 our results have been validated by HPLC with diode-array detection.

99 y zone, electrophoresis method combined with diode-array detector (SPE-CE-DAD).

100 s work, we propose using resonant tunnelling diodes as practical true random number generators based

101 pressure force generated by a standard laser diode at room temperature.

102 A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spi

103 Bright light-emitting diodes based on solution-processable organometal halide

104 Highly bright light-emitting diodes based on solution-processed all-inorganic perovsk

105 ept low-cost, amplifier-free, light-emitting-diode-based low-power ion-indicator.

106 r on the smartphone involves a compact laser-diode-based photosource, a long-pass (LP) thin-film inte

107 A broadband optical diode behavior is observed after optimization, with a la

108 Up to 18-Gbps direct encoding of blue laser diode (BLD) is demonstrated for free-space data transmis

109 of commercial fluorescent or light-emitting diode bulbs, but with exceptional reproduction of colour

110 packages, chip resistors, and light-emitting diodes, can be reflow-soldered onto S4s without modifica

111 hybrids, and their applications in sensing, diodes, catalysis, and batteries.

112 op surface of solar cells and light emitting diodes cause shadow losses.

113 e2-WS2 lateral junctions showed well-defined diode characteristics with a rectification ratio up to 1

114 smaller voltage can be achieved by a single diode compared to three diodes required for the Euclidea

115 factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalli

116 ation ever predicted for far-field radiative diode configurations.

117 akdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor.

118 ce (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incom

119 ge from biosensors to organic light-emitting diodes, current understanding of the quantum-mechanical

120 y larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes.

121 right port is reflected back by the optical diode dielectric structure.

122 -matrix addressing of organic light-emitting diode displays.

123 Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devic

124 hree-color warm-white organic light-emitting diode employing an efficient phosphor-phosphor type host

125 emissive dopant in an organic light emitting diode exhibiting external quantum efficiency as high as

126 e QW concept in nitride-based light-emitting diodes for long wavelength emission.

127 an be used to build high-temperature thermal diodes for performing logic operations in harsh environm

128 used as photosensitizers, in light-emitting diodes, for biosensing and in photocatalysis.

129 prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows goo

130 A deep-blue organic light-emitting diode from one phosphor exhibits Commission Internationa

131 e with a thin spacer, and excited by a laser-diode from the backside through a glass hemisphere, gene

132 l observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitatio

133 leomycin, salicylic acid, and light-emitting diode have shown some success.

134 Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient s

135 urface was illuminated with a light emitting diode, (ii) then, the transmitted (reflected) rays emitt

136 ling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via

137 A color tunable organic light emitting diode in red spectrum was attached on a trapezoidal pris

138 crystal displays, and organic light-emitting diodes in conjunction with a critical analysis of both t

139 An organic Schottky barrier diode is created in a single planar PEDOT:Tos film by tr

140 For the 4-Gbit/s link, a green laser diode is directly modulated.

141 ntinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desor

142 es used as dopants in organic light-emitting diodes is an effective strategy to improve the outcoupli

143 , e.g., for polarized organic light emitting diodes is demonstrated.

144 ubstrate for flexible organic light-emitting diodes is demonstrated.

145 icient perovskite nanocrystal light-emitting diodes is shown.

146 ed in conjunction with an external NIR laser diode, is developed as a power delivery system.

147 A diode laser (aluminum-gallium-arsenide, 660 nm) was appl

148 emperature by simply using a continuous-wave diode laser as an optical pumping source.

149 We present a tunable diode laser atomic absorption spectroscopy (TDLAAS) meth

150 of 6 mg/m(2) body surface area and a 689 nm diode laser for 83 seconds.

151 diation power (P < 0.001), especially if the diode laser irradiation was associated with the applicat

152 A hand-held diode laser is implemented for solid sampling in portabl

153 cavity where it is probed by a near-infrared diode laser operating at approximately 1670 nm.

154 ics for delivery and return of low intensity diode laser radiation to and from the measurement chambe

155 e laser system uses a single extended cavity diode laser that gives enough power for interrogating th

156 oot planing (SRP) plus the adjunctive use of diode laser therapy to SRP alone on changes in the clini

157 rt of a feedback loop, we stabilize a 780 nm diode laser to achieve a linewidth better than 1 MHz.

158 with a fiber-coupled near-infrared (808 nm) diode laser with laser power of 0.56 W/cm(2) for 3 minut

159 varnish application + 0.5 W, 0.7 W, and 1 W diode laser, respectively).

160 roup): G1, G3, and G5 (0.5 W, 0.7 W, and 1 W diode laser, respectively); G2, G4, and G6 (fluoride var

161 root dentin after irradiation with a 980-nm diode laser, with or without associated fluoride varnish

162 ntium oxide irradiated by a simple low power diode laser.

163 We delivered TTT with an infrared diode laser.

164 spectroscopy (CERS) with optical feedback cw-diode lasers as a sensitive analytical tool.

165 latively low cost, portable, battery-powered diode lasers.

166 n fermionic systems including widely applied diode lasers.

167 er "fossil" buried within a broad area laser diode (LD) cavity when the LD was damaged by applying a

168 diode-pumped solid-state (DPSS) laser, laser diode (LD), light emitting diode (LED), super luminescen

169 n sulfide, employing a 470 nm light emitting diode (LED) and a microfiber optic USB spectrometer.

170 ce of different wavelength of light-emitting diode (LED) at 250mumol.m(-2).s(-1) of photon flux densi

171 demonstrated to power a 2.2 V light emitting diode (LED) for 1 min.

172 the first time, a sub-250 nm light-emitting diode (LED) is investigated as a light source for optica

173 cited by near-infrared 740 nm light-emitting diode (LED) lamps with bright upconversion luminescence

174 5.4 J/cm(2) with either green light-emitting diode (LED) or ultraviolet-A (UV-A) irradiation.

175 Light from a white light emitting diode (LED) source is dispersed onto a digital micromirr

176 as the recombination layer in light-emitting diode (LED) structures.

177 PSS) laser, laser diode (LD), light emitting diode (LED), super luminescent light emitting diode (sLE

178 highly sensitive and low-cost light emitting diode (LED)-based epifluorescence sensor module for qPCR

179 features optional modules for light-emitting diode (LED)-based fluorescence microscopy and optogeneti

180 ion in mice followed by local light-emitting diode (LED)-based illumination, either of the thalamus o

181 films) or electrically [in a light-emitting diode (LED)].

182 easurement in fullerene-based light emitting diodes (LED).

183 zed for deep ultraviolet (UV) light emitting diodes (LEDs) and lasers.

184 ated into the device based on light emitting diodes (LEDs) and smart phones.

185 Light-emitting diodes (LEDs) are a potential new resource in food produ

186 Intrinsically stretchable light-emitting diodes (LEDs) are demonstrated using organometal-halide-

187 White light-emitting diodes (LEDs) are rapidly replacing conventional outdoor

188 ate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charge

189 The first application of light-emitting diodes (LEDs) for ultraviolet photodissociation (UVPD) m

190 Light emitting diodes (LEDs) have been developed to emit ultraviolet ra

191 the demand for high-power lighting-emitting diodes (LEDs) is currently increasing.

192 , the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of

193 Pure FA-perovskite-based light-emitting diodes (LEDs) with high efficiency are reported.

194 ted by appropriately selected light emitting diodes (LEDs), are visualized and automatically analyzed

195 ted to microscale, injectable light-emitting diodes (LEDs), with the ability to operate at wavelength

196 nt light or increasingly, the light-emitting diodes (LEDs).

197 m) transmitted by an array of light-emitting diodes (LEDs).

198 ith low-power density far-red light-emitting diode light.

199 high-temperature probing and light-emitting-diode lighting.

200 sport measurements of these materials reveal diode-like behavior with clear current rectification, fu

201 handed B- and left-handed Z-forms leads to a diode-like switch in spin selectivity; which spin moves

202 Organic diodes manufactured on a plastic substrate capable of re

203 r, so far, practical implementations of spin-diode microwave detectors have been limited by the neces

204 rther performance improvement of spin-torque diode microwave detectors.

205 itting diode (sLED) and micro light emitting diode (mLED) in different settings, together with the qu

206 ds of promising novel organic light-emitting diode molecules across the visible spectrum.

207 ectable, microscale inorganic light-emitting diodes (mu-ILEDs) with wireless control and power delive

208 sity silicon-based microscale light-emitting diode (muLED) array, consisting of up to ninety-six 25 m

209 exigent challenges in organic light-emitting diodes; namely, efficiency roll-off and degradation.

210 In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm

211 he performance of the organic light-emitting diode (OLED) and related EL devices.

212 cient multifunctional organic light emitting diode (OLED) materials.

213 ther coupling with an organic light-emitting diode (OLED), a visible and wearable touch monitoring sy

214 were obtained with an organic light emitting diode (OLED), having an emission spectrum adapted to alg

215 halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film

216 Organic light emitting diodes (OLEDs) are in widespread use in today's mobile p

217 Phosphorescent organic light-emitting diodes (OLEDs) are leading candidates for next-generatio

218 ion-processed polymer organic light-emitting diodes (OLEDs) doped with triplet-triplet annihilation (

219 atrix and demonstrate organic light-emitting diodes (OLEDs) emitting at 720 nm.

220 sion of CP light from organic light-emitting diodes (OLEDs) has been a focus of research as it has th

221 Organic light-emitting diodes (OLEDs) promise highly efficient lighting and dis

222 ic applications, e.g. organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs)

223 ctional materials for organic light-emitting diodes (OLEDs), photovoltaic cells, chemical sensors, an

224 With the example of organic light-emitting diodes (OLEDs), spectral imaging with pixel-by-pixel wav

225 or solution-processed organic light-emitting diodes (OLEDs).

226 tion nanorod light-responsive light-emitting diodes open feasible routes to a variety of advanced app

227 Molecular diodes operating in the tunnelling regime are intrinsica

228 LC-based all-optical devices such as optical diode, optical transistor and all primary logic gate ope

229 There is little evidence that using a diode or neodymium:yttrium-aluminum-garnet laser adds cl

230 tre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of freque

231 gh-brightness blue perovskite light-emitting diodes (PeLEDs) are obtained by controlling the grain si

232 ayers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness an

233 nation, and there is no detectable change in diode performance after numerous current-voltage scans b

234 n from phosphorescent organic light-emitting diodes (PHOLED) is required for both display and lightin

235 f blue phosphorescent organic light-emitting diodes (PHOLEDs) has remained insufficient for their pra

236 rystalline materials, organic light-emitting diodes, photochemical switches, redox materials, and mol

237 iers, bio-sensors, actuators, light emitting diodes, photodetector arrays, photovoltaics, energy stor

238 ng detectors such as single-photon avalanche diode, photomultiplier tube, or arrays of such detectors

239 serve as the active layers in light-emitting diodes, photovoltaics, and other devices.

240 ive materials to form polymer light-emitting diodes (PLEDs) that emit light of different wavelengths

241 oyed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitt

242 The diode pumped solid-state laser cavity was constructed us

243 With the cesium-based diode-pumped alkali laser and remote plasma etching of S

244 We fabricate a quasi-continuous-wave (QCW) diode-pumped Nd:YAG laser cavity, which is shortened to

245 es are measured for various light sources of diode-pumped solid-state (DPSS) laser, laser diode (LD),

246 Diode-pumped solid-state micro lasers are compact (centi

247 for the development of organic photovoltaic diodes (PVDs).

248 Here, we present quantum dot light emitting diodes (QDLEDs) with a metasurface-integrated metal elec

249 trodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an idea

250 o values comparable to those of conventional diodes (R >/= 10(5)) an alternative mechanism of rectifi

251 bricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, i

252 Based on silicon and air only, this optical diode relies on asymmetric spatial mode conversion betwe

253 achieved by a single diode compared to three diodes required for the Euclidean electrode's higher vol

254 ry, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic appli

255 rent densities as functions of time for both diodes showed fast turn-on transients and increases in c

256 Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quan

257 iode (LED), super luminescent light emitting diode (sLED) and micro light emitting diode (mLED) in di

258 tential applications in white light emitting diodes, solar cells, optical codes, biomedicine and so o

259 for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, includ

260 ons in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, a

261 ing blocks for use in lasers, light emitting diodes, solar concentrators, and parity-time symmetry ma

262 achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin h

263 e functional single-molecule devices such as diodes, switches, and wires are well studied, complex si

264 ng, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the inc

265 ctively to form memory devices, sensors, and diodes that are completely built from soft materials.

266 agement circuits such as rectifiers comprise diodes that consume power and have undesirable forward b

267 l laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared w

268 component (a ferrocene unit) of a molecular diode to the backbone (an alkyl chain), both the electro

269 and noninvasive technique for light-emitting diodes to measure Tj in the absence of PISO.

270 field-effect transistors and light-emitting diodes to medical X-ray detectors.

271 es within a proton wire can act as a 'tunnel diode' to kinetically trap protons and control the direc

272 use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structu

273 Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bot

274 f-the-art technology as well as high-density diode/transistor arrays.

275 evices analogous to electronic systems, like diodes, transistors, and logic elements, suggests the po

276 e.g. solar cells, modulators, detectors, and diodes) used in space probes are subject to damage arisi

277 racterized a deep-ultraviolet light-emitting diode (UV-LED) device using this AlN/patterned Si.

278 A 235 nm deep ultraviolet-light-emitting diode (UV-LED) is employed within an on-capillary photom

279 with bandpass filters and UV light-emitting diodes (UV LEDs) isolated wavelengths in approximate 10

280 formance phosphors-free white light-emitting-diodes (w-LEDs) using Ba2V2O7 or Sr2V2O7 quantum dots th

281 phor for application in white light emitting diodes (w-LEDs).

282 escence - based white organic light emitting diodes (W-OLEDs) composed of three emitters (2,7-bis(9,9

283 Au transparent electrode with light-emitting diodes was fabricated and its feasibility for optical bi

284 The diodes were also electrically characterized: capacitance

285 erse bias, the dark current densities of the diodes were measured to be (347.2 +/- 0.4) mA cm(-2) and

286 t -5 V reverse bias, the capacitances of the diodes were measured to be (84.05 +/- 0.01) pF and (121.

287 nduced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio,

288 ivered by lasers, but also by light-emitting diodes, which are less expensive, safer, and more portab

289 d SAMs result in poorly performing molecular diodes, while stiff, densely packed SAMs result in well-

290 Here, we report a molecular diode with R = 6.3 x 10(5) based on self-assembled monol

291 rojunction photodetectors (25 x 25 microm(2) diodes with 10 x 10 microm(2) microjunctions) in combina

292 otentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet

293 Lateral MoTe2 p-n diodes with an ideality factor of 1.2 are fabricated usi

294 Efficient organic light-emitting diodes with better roll-off behavior based on these nove

295 portant for preparing organic light-emitting diodes with high efficiency.

296 hese devices also function as light-emitting diodes with low turn-on voltage and tunable emission.

297 and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling

298 Light-emitting diodes with tunable performance are demonstrated by vary

299 ally or optically with a blue light-emitting diode, with activation spread recorded simultaneously us

300 by engineering metal-insulator-metal tunnel diodes, with a junction capacitance of approximately 2 a