ライフサイエンスコーパス: dislocation

1 s for late in-the-bag intraocular lens (IOL) dislocation.

2 atus in cases of late in-the-bag IOL complex dislocation.

3 y seen in patients with an anterior shoulder dislocation.

4 ted cataract surgery, trauma, or spontaneous dislocation.

5 ion with another same-sign pre-existing edge dislocation.

6 rhomocysteinemia, no patients exhibited lens dislocation.

7 d rhegmatogenous retinal detachment, or lens dislocation.

8 ng deformation) when precipitates are cut by dislocations.

9 by the number, rotation, and location of the dislocations.

10 The MPZ contained a high density of dislocations.

11 l properties of WSe2 are influenced by screw dislocations.

12 f Ag(0), and it was favored near the crystal dislocations.

13 olve for change in volume for simple tensile dislocations.

14 is composed of three distinct types of Lomer dislocations.

15 effect on the alpha-Mg grain boundary and on dislocations.

16 ed with collective glide of Shockley partial dislocations.

17 curs by cross-slip of the individual partial dislocations.

18 erence between pyramidal [Formula: see text] dislocations.

19 ation, propagation and retraction of partial dislocations.

20 lly effective in materials with mobile screw dislocations.

21 such as stacking faults generated by partial dislocations.

22 oid loss that results in a higher risk of re-dislocations.

23 was estimated to be 13.8 GPa for the partial dislocation 1/6 <110> {111} and 6.7 GPa for the full dis

24 ion 1/6 <110> {111} and 6.7 GPa for the full dislocation (1/2) <110> {110}.

25 ost common complication was graft detachment/dislocation (10.78%).

26 of the prosthesis (3 patients, 1.9%), joint dislocation (2 patients, 1.3%), stump and prosthesis fra

27 hs after surgery, with 2 patients undergoing dislocation a second time.

28 By controlling the degree of crystal screw dislocation, a single through pore with diameter ranging

29 astic instability, resulting from pronounced dislocation activity and deformation-induced nano-twinni

30 presenting with in-the-bag intraocular lens dislocation after repair of retinal detachment were eval

31 high crystal quality and very few threading dislocations, allowing for further re-growth of the deep

32 ching certain limiting conditions of strain, dislocations alone can no longer relieve mechanical load

33 the CuZr layers due to the accumulated glide dislocations along CuZr-Cu interfaces, and propagate int

34 Impingement is a major source of dislocation and aseptic loosening in total hip arthropla

35 cture that severely impedes the movements of dislocation and grain boundary sliding and provides a ta

36 SQSTM1-dependent autophagy and VCP-mediated dislocation and presentation of ubiquitinated sperm mito

37 ery time were reduced markedly, as were flap dislocation and pterygium recurrence with Tisseel fibrin

38 posite mainly rely on CNTs' interaction with dislocations and CNT's intrinsic high strength.

39 The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent inte

40 pin ice lattices in the form of lattice edge dislocations and directly observe the resulting spin con

41 al dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely consider

42 in polycrystalline materials by stabilizing dislocations and may provide a way to create high-energy

43 create valleys composed of dissociated edge dislocations and ridges where partial dislocations have

44 er in one lattice modulation, in the form of dislocations and shear deformations, and nascent order i

45 High densities of dislocations and stacking faults were also observed in t

46 The dislocations and the Al/B4C interfaces provide more hete

47 stic model for thermally-activated motion of dislocations and, then, introduce power-law flow rules.

48 plant procedure: cardiac perforation, device dislocation, and femoral vascular access site complicati

49 Zr should interact strongly with the studied dislocation, and thereby decrease the dislocation slip a

50 ightly coupled steps: substrate recognition, dislocation, and ubiquitin-dependent proteasomal destruc

51 nown to control the activation and motion of dislocations, and despite the fact that most of these ma

52 lattices evolve from structures filled with dislocations, and how local variations at the micrometer

53 ructural features are point defects, lattice dislocations, and nanostructure interfaces.

54 s such as grain boundaries, stacking faults, dislocations, and point defects, as well as to precisely

55 n effective barrier that inhibits subsequent dislocation annihilation at free surfaces.

56 This study reveals that dense lattice dislocations ( approximately 4 x 10(12) cm(-2) ) are par

57 Recently, it has been demonstrated that dislocations are effective at scattering the remaining m

58 Such dislocations are formed in the highly oriented nanotwinn

59 mage lattice form) and slip (whereby lattice dislocations are generated and move), but determining wh

60 tions and theory modelling, we show that the dislocations are highly active, and we delineate the spe

61 s-slip of the associated [Formula: see text] dislocations are not well established even though they d

62 Dislocations are smoothly curved without any preferred l

63 Dislocations are the primary agents of permanent deforma

64 Pipe diffusion along dislocation arrays connected to a chemical or structural

65 Dense dislocation arrays formed at low-energy grain boundaries

66 Periodic dislocation arrays produce 2D superlattices of coherent

67 onstrates the effectiveness of dense lattice dislocations as a means of lowering kappaL , but also th

68 racteristic of the prevailing slip bands and dislocations, as well as lattice disorder, which can eff

69 We examine driven dislocation assemblies and show that they can exhibit a

70 ism which accounts for the formation of edge dislocations at high film strain.

71 chanism accounting for the presence of these dislocations at the interface since they are not mobile

72 from the grain interior, a consequence of a dislocation-based crack incubation mechanism.

73 The dislocation behavior is due to irregular (01) beta-Ga2O3

74 lution transmission electron microscopy with dislocations being observed at the film-substrate interf

75 with in-the-bag IOLs who presented with IOL dislocation between 2008 and 2013 were identified (n=71)

76 ion grains migrate through the 3D network of dislocation boundaries in deformed crystalline materials

77 racterized with an array of Shockley partial dislocations bp:-bp on every basal plane and the 30 degr

78 In contrast to dislocations, bulk ripplocations have no Burgers vector

79 racteristics such as ideal shear stress, the dislocation Burgers vector, and possible accompanying at

80 mulations which show that supersonic partial dislocation bursts play a role in triggering the crystal

81 On degassing, the locked dislocations can be reactivated under cyclic loading to

82 after exposing aluminium to hydrogen, mobile dislocations can lose mobility, with activating stress m

83 Crystallographic defects such as dislocations can significantly alter material properties

84 els embedded within WSe2 monolayers, using a dislocation-catalysed approach.

85 sts just fractions of picoseconds before the dislocations catch the shock front and decelerate back t

86 behavior is driven by a diffusion-controlled dislocation climb process.

87 fects segregated to STGBs are annihilated by dislocation climb.

88 When the dislocation concentration is maximized, one of the lowes

89 governed by a type of correlated 'necklace' dislocation consisting of multiple short component dislo

90 The motion of extended defects called dislocations controls the mechanical properties of cryst

91 lower oxygen vacancy formation energy at the dislocation core provides a quantitative and direct expl

92 al coefficient is directly computed from the dislocation core structure.

93 Multiple dislocation cores and other complexities can lead to mor

94 The electronic structure of the dislocation cores calculated using DFT shows significant

95 ecause the increased interatomic distance at dislocation cores raises the migration barrier of inters

96 softening of crystalline regions surrounding dislocation cores, and find that stress fluctuations in

97 y real systems in which a typical density of dislocations could fully frustrate a canonically unfrust

98 the unusual mechanism of [Formula: see text] dislocation cross-slip between pyramidal I and II planes

99 A detailed study of dislocation densities and subgrain boundaries suggests t

100 esistivity measurements were correlated with dislocation densities obtained through X-ray diffraction

101 annealed single-grain metallic films contain dislocation densities of about 10(14) m(-2); hence dislo

102 his leads to work softening from a decreased dislocation density and the presence of long segment sta

103 ion dominates accounting for the decrease in dislocation density during cooling is essential.

104 ons shearing the gamma' precipitates, a high dislocation density in the gamma channels and near the g

105 subgrain size, precipitate distribution, and dislocation density in the microstructure, responsible f

106 e GaN layers on Si with the lowest threading dislocation density of 1.1 x 10(7) cm(-2) achieved to da

107 location evolution we successfully predict a dislocation density of 1.5 x 10(12) cm(-2) within the sh

108 n electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 x 10(7) c

109 lastic flow in which the flow stress and the dislocation density remain constant as long as the condi

110 d strengthening at a size-dependent critical dislocation density.

111 t (ISF) along 112{111}, which is the partial dislocation direction for slip on these close packed pla

112 pon crystallization through a well-organized dislocation/disclination structure introduced at the gla

113 Planar (1/2) < 110 > {111} dislocations dissociate into Shockley partials whose sep

114 homogeneous strain, pointing out the role of dislocations, domain boundaries and interactions among c

115 tors, which allows the choice bet ween screw-dislocation-driven and layer-bylayer growth, and the des

116 1.4 {95% CI 0.24-7.5}; P = 0.7]), and graft dislocation (DSAEK n = 5 vs. UT-DSAEK n = 5 [RR 1.0 {95%

117 Aluminium typically deforms via full dislocations due to its high stacking fault energy.

118 onal imaging of the formation or movement of dislocations during dynamic processes.

119 e show how gBCDI resolves grain boundary and dislocation dynamics in individual grains in three-dimen

120 e expected based on the stochastic nature of dislocation dynamics in microscopic crystals.

121 Dislocation dynamics models are usually used as mesoscal

122 jiggle and wiggle" of atomic motion, whereas dislocation dynamics models do not.

123 Dislocation dynamics simulations allowing self climb and

124 solution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-ax

125 sensitive to changes in h, to grain boundary dislocation emission and glide dominated flow, where the

126 screte slip events exclusively by individual dislocations emitted statistically from the grain bounda

127 Applying a modified analytical equation for dislocation evolution we successfully predict a dislocat

128 The dislocation field is a local probe of elastic properties

129 cation sources and trapping sites of running dislocations for dislocation multiplication, and the amp

130 reasing heterostructure thickness and misfit dislocation formation at the buried interface, a periodi

131 structures, low-angle grain boundaries, and dislocations formed during manufacturing, while high uni

132 tion methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully rel

133 The integration of dislocation-free Ge nano-islands was realized via select

134 There were 2 cases of flap dislocation from the rhinostomy site 1 week post-operati

135 ibit entirely different geometries to misfit dislocations generated in conventional epitaxial thin fi

136 he 3D twin network which offers pathways for dislocation glide along, and cross-slip between, interse

137 Prediction of Peierls stress associated with dislocation glide is of fundamental concern in understan

138 architecture is not disrupted by interfacial dislocation glide, serving as a continuous source of str

139 se grains, edge-type geometrically necessary dislocations (GNDs) dominate, and their dislocation line

140 to modelling 'real' materials with dopants, dislocations, grain boundaries and interfaces; but these

141 ation of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces.

142 strain hardening capacity that is enabled by dislocation hardening of the stable phase and transforma

143 sms such as solid solution hardening, forest dislocation hardening, as well as mechanical twinning le

144 Engineered atomic dislocations have been used to create a novel, Sb2 Te3 n

145 d edge dislocations and ridges where partial dislocations have recombined.

146 a number of mechanisms creating the desired dislocations homogeneously distributed within the grains

147 boundary (TB) strengthening from blockage of dislocations impinging on TBs, coupled with the 3D twin

148 and proceeded with the emission of a partial dislocation in between these two stacking faults.

149 There was a higher rate of dislocation in patients with a history of ectopia lentis

150 simulations, we uncover how a 100{011} edge dislocation in SrTiO3, a prototypical perovskite oxide,

151 tions included 5 cases of conjunctival graft dislocation in the Evicel group, 1 case of pyogenic gran

152 ation consisting of multiple short component dislocations in adjacent twins, connected like the links

153 ended core dislocations, such as <110> {111} dislocations in Al-based and Ti-based intermetallic comp

154 employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries us

155 the Peierls stress, of planar-extended core dislocations in face-centered cubic structures.

156 Using the example of a-type screw dislocations in Mg, we compute accurately the Peierls ba

157 ata shows a significantly higher rate of IOL dislocations in patients with MFS.

158 and progression of diffusion along threading dislocations in sequentially annealed nitride metal/semi

159 planation for the electronic conductivity of dislocations in SrTiO3 and related oxides studied for re

160 omistic calculation of the formation of edge dislocations in such films.

161 EMF in Al2Cu column was carried out, and the dislocations in the Al2Cu phase obtained without and wit

162 vacancy engineering strategy to create dense dislocations in the grains.

163 panied by misfit strain and the formation of dislocations in the subsurface region via a surface diff

164 Additionally, the density of threading dislocations in these region is one order of magnitude l

165 the grain boundary is commensurate with its dislocation-induced strain field, providing a strategy f

166 he particles does not contribute much to the dislocation interaction, which is typically needed for s

167 eation, dissociation/recombination behavior, dislocation interactions/reactions), evolution of damage

168 cal order/disorder such as grain boundaries, dislocations, interfaces, surface reconstructions and po

169 In-the-bag intraocular lens dislocation is an uncommon but serious complication of c

170 we propose that cross-split of arrested edge dislocations is resulting in a strain burst.

171 which we coined a term "cross-split of edge dislocations", is a unique and collective phenomenon, wh

172 ract weakly with the elastic fields of screw dislocations, it has long been accepted that solution ha

173 sary dislocations (GNDs) dominate, and their dislocation line directions are almost parallel to the c

174 Dislocation line lengths changed from a primarily linear

175 Finally, a dislocation line model is developed to predict the role

176 The pathways by which dislocations, line defects within the lattice structure,

177 he lattice polarization, Burgers vector, and dislocation-line direction.

178 ropy, which induce a large anisotropy in the dislocation-line energy.

179 sticity properties of a metal are defined by dislocations-line defects in the crystal lattice whose m

180 nd predict that beta1 grows along <110>Mg on dislocation lines due to the migration of metastable {11

181 hat grow along <110>Mg in bulk hcp-Mg and on dislocation lines.

182 scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has bee

183 reveal that each crystal possesses a single dislocation loop that occupies a common position in ever

184 nd states of self-stress localized along the dislocation loop to the handedness of the vector triad f

185 account for the fast, direct coalescence of dislocation loops seen experimentally.

186 g to alpha-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sit

187 tive mechanism, self climb, allows prismatic dislocation loops to move away from their glide surface

188 ns of the material by including defect lines-dislocation loops-that are unique to three dimensions.

189 cancy migration barrier for 1/2<111> (<100>) dislocation loops.

190 sure gradient in defect-free regions or near dislocations markedly transform the diffusive nucleation

191 suggesting that zonular dehiscence and lens dislocation may result from progressive capsular contrac

192 Understanding how edge misfit dislocations (MDs) form in a GeSi/Si(001) film has been

193 in the development of multiscale models for dislocation mediated plasticity.

194 surface of the indented crystals demonstrate dislocation-mediated plastic deformation.

195 n these structures are capable of supporting dislocation-mediated plastic fracture at crack velocitie

196 ify the conditions under which the limits of dislocation-mediated plasticity are reached and to under

197 Most of our knowledge of dislocation-mediated stress relaxation during epitaxial

198 creasing temperature suggestive of increased dislocation mobility being responsible for the brittle t

199 and dip of 85 degrees by applying the Okada dislocation model considering a single patch with a homo

200 ure and can be described with grain boundary dislocation models.

201 licon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than

202 Results show slow diffusive dislocation motion at nm/s inside ICNPs and fast surface

203 n occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds b

204 of the material and gives insights into the dislocation motion.

205 and the matrix acted as a strong barrier to dislocation motion.

206 dered a weak inhibitor or even a promoter of dislocation movements in metals and alloys.

207 ic magnetic forces (TEMF) causing torque and dislocation multiplication in the faceted primary phases

208 d trapping sites of running dislocations for dislocation multiplication, and the ample space in the g

209 ned the primer strand, causing deletions via dislocation mutagenesis.

210 Dislocations near the sutures accommodate lattice mismat

211 d during FIB-milling, we observe an extended dislocation network that causes stresses far beyond the

212 00 degrees C, which comprise hexagonal screw dislocation networks formed by basal dislocation reactio

213 servations provide mechanistic detail of how dislocations nucleate and migrate at heterointerfaces in

214 Bragg coherent diffractive imaging, we image dislocations nucleated deep in a Pd nanoparticle during

215 l (dh) phase transition and then proceeds by dislocation nucleation and accumulation in the newly for

216 However, an orchestrated sequence of dislocation nucleation and migration is observed to give

217 ndom selection of the mature QDs relaxing by dislocation nucleation at a later stage in the growth, i

218 More specifically, vacancies reduce dislocation nucleation barrier, facilitating stress rela

219 e that the phase transformation begins after dislocation nucleation close to the phase boundary in pa

220 Homogeneous dislocation nucleation occurs near the shock front and s

221 on behavior, plastic deformation mechanisms (dislocation nucleation, dissociation/recombination behav

222 ase morphology affects the critical size for dislocation nucleation.

223 In the MFS group, significantly more IOL-dislocations occurred than compared to the non-MFS group

224 pairs in these lesioned systems are broken, dislocation of both Asp192 (a metal coordinating ligand)

225 nterocytes which are characterized by apical dislocation of claudins are CPE-susceptible.

226 is predicted to stem from the electrostatic dislocation of indole highest occupied molecular orbital

227 Dislocation of polypeptides from the mitochondrial outer

228 The dislocation of the crystalline lens is a common finding

229 tation include arthrogryposis and congenital dislocation of the hips.

230 Dislocation of the intraocular lenses can occur frequent

231 fields leads to the spatially heterogeneous dislocation of the particles in the glass, i.e., the app

232 Seven eyes suffered dislocation of the PCIOL an average of 12.11 +/- 11.97 m

233 ustained a retinal detachment 8 months after dislocation of the PCIOL, and 1 patient experienced iris

234 We tested whether dislocation of the spike initiation zone affects signal

235 Postoperatively, we noticed two dislocations of IOL fixated using Sharioth technique and

236 an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annih

237 ed through the formation of twinning partial dislocations on consecutive atomic planes.

238 CO to active sites (step edges and threading dislocations) on a Au(111) surface.

239 om the conventional twin microstructure to a dislocation one by grain refinement.

240 rn Wasatch Fault at c. 0.5 mm yr(-1) tensile dislocation opening in the eastern Sevier Desert.

241 with late in-the-bag intraocular lens (IOL) dislocation operated with 2 different methods, and to as

242 ials due to the occurrence of uncontrollable dislocations or defects.

243 nce the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth

244 a martensitic generation and oscillation of dislocation pairs followed by a diffusive nucleus growth

245 sibilities for establishing new theories for dislocation-particle interactions, based on the limitati

246 y ordered states, and each produces distinct dislocation patterns as well as specific features in the

247 s and low-angle grain boundaries can enhance dislocation pinning and promote twinning.

248 A dislocation pinning model reveals that the enhanced hard

249 ation densities of about 10(14) m(-2); hence dislocation-pipe diffusion (DPD) becomes a major contrib

250 l stability by surface diffusional creep and dislocation plasticity, respectively, which extends far

251 Screw dislocations play an important role in materials' mechan

252 ns are the consequence of a proliferation of dislocations plus electronic phase separation.

253 l screw dislocation networks formed by basal dislocation reactions.

254 s C, most likely through thermally-activated dislocation rearrangement on the microscopic scale.

255 the UFG Cu due to the suppression of dynamic dislocation recovery.

256 ormation, despite the region surrounding the dislocations remaining in the hydrogen-poor phase.

257 c stress field promote retraction of partial dislocations, resulting in full strain recovery.

258 figure of merit, which can be explained by a dislocation scattering model.

259 mmonly observed, and plates containing mixed dislocation shapes have intermediate noncentrosymmetric

260 p results in progressive work hardening with dislocations shearing the gamma' precipitates, a high di

261 langmuir) indicates Au atom extraction from dislocation sites of the herringbone reconstruction, mob

262 tudied dislocation, and thereby decrease the dislocation slip anisotropy in the alloy.

263 nd that the competition between twinning and dislocation slip can be mediated by loading orientation,

264 The dislocation slip system in each of the forty crystal gra

265 As the dislocations slip inside the crystal grains and pile up

266 The crack in the CG Cu was blunted by dislocation-slip mediated plastic deformation, while the

267 hocks, we find a transition from twinning to dislocation-slip-dominated plasticity at high pressure (

268 B character, the SCM is found to proceed via dislocation slipping in the <100> or <110> mode with str

269 The results predict a transition from dislocation-source strengthening to forest-dominated str

270 time, the abundant domain boundaries provide dislocation sources and trapping sites of running disloc

271 veals variations in the number and shapes of dislocation spirals and different layer stackings that a

272 Plates with triangular dislocation spirals form noncentrosymmetric stacking tha

273 ced photoluminescence, plates with hexagonal dislocation spirals form the bulk 2H layer stacking comm

274 hermal mechanism, by which the arrested edge dislocations split into two other edge dislocations that

275 by interfering with the glycan trimming and dislocation steps of ERAD.

276 the ample space in the grain interior allows dislocation storage; a pronounced strain-hardening rate

277 matrix was contributed to load transfer and dislocation strengthening.

278 ng annealing motivates atomic-level study of dislocation structures of both <0001> tilt and twist gra

279 study more complicated planar-extended core dislocations, such as <110> {111} dislocations in Al-bas

280 ver, associated high IOP was not resolved by dislocation surgery in many patients, and increased IOP-

281 ed an IOP decrease after late in-the-bag IOL dislocation surgery that seemed to be more pronounced wi

282 edge dislocations split into two other edge dislocations that glide on two different crystallographi

283 raction between oxygen and the core of screw dislocations that mainly glide on prismatic planes.

284 Dislocations that move through the lattice accumulate U

285 ed in association with Gd segregations along dislocations that nucleated during hot extrusion.

286 eity, including strain fields and individual dislocations, that can be used under operando conditions

287 Away from the dislocation, the magnets are locally unfrustrated, but f

288 and propagating via coherent transformation dislocation; the nanorod is reduced to hafnium on coolin

289 However, relocking the dislocations thereafter requires a surprisingly long wai

290 tion of separated but closely spaced partial dislocations, thus enabling an effective bypassing of th

291 hmid factors of leading and trailing partial dislocations to be comparable to each other.

292 high cutting stress (the stress required for dislocations to cut through coherent precipitates and th

293 anism provides an efficient pathway for edge dislocations to overcome planar obstacles.

294 However, in disconnected dislocations, trace elements remain locked.

295 ed as a powerful tool capable of identifying dislocations, twin domains, and other defects in 3D deta

296 a new class of experiments to probe average dislocation velocity at very high applied shear stress.

297 While edge dislocations were believed to change their glide plane o

298 so may be dissociated from the strut without dislocation, when separation occurs at the time of surgi

299 at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior

300 quently interact and evolve with the partial dislocations, which migrate from domain to domain with t

301 ow that these RSFs originate from cracks and dislocations within the bilayer MoS2.

302 n the rates of nucleation and propagation of dislocations within the crystal structures of HOIPs and