ライフサイエンスコーパス: dopant

1 S changed strongly depending on the specific dopant.

2 ng the selenization of metal Pd(0), using Ag dopant.

3 rhodium content, to a maximum content of 3 % dopant.

4 ith novel surface structures using different dopants.

5 impurity band, both induced by the magnetic dopants.

6 ation based on a statistical distribution of dopants.

7 as surface ligands, sintering promoters, and dopants.

8 mum ZT value of 1.45 at 1000 K with suitable dopants.

9 gates into grain boundaries acting as n-type dopants.

10 teractions between themselves and individual dopants.

11 iew of the wide variety of materials used as dopants.

12 ton recombination and emission of the Mn(2+) dopants.

13 cult to compare the suitability of different dopants.

14 ) by introducing AuCl(3) and benzyl viologen dopants.

15 presence and density of the gold nanocrystal dopants.

16 tor for the entire family of p-block element dopants.

17 gy to further improve internalization of the dopants.

18 ementary inverters by inkjet printing of the dopants.

19 self-assembled NCs using different elemental dopants.

20 roscopy are used to investigate the drift of dopants.

21 nization potentials of their Ag(+) and Cu(+) dopants.

22 hene) (PQT12) to increase oxidizability by p-dopants.

23 TAD, doped with two differently sized p-type dopants.

24 and conductivity as well as the presence of dopants.

25 p-type conjugated polymers by adding n-type dopant 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-b

26 ining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom

27 at the surface of the growing film promotes dopant alignment in these otherwise amorphous films.

28 simulate the vibrational spectra, moving the dopant along the copolymer backbone and finding that eff

29 Using acetonitrile as a dopant, an increased sensitivity was observed compared t

30 roups, molecular photo-switches, some chiral dopant and a small amount of photoinitiator.

31 se successfully avoids segregation of the Gd dopant and depletion of oxygen vacancies at the Ce0.8Gd0

32 e we investigate how charge transfer between dopant and donor-acceptor copolymers is affected by the

33 dopant coupling from the overlap between the dopant and exciton wave functions of the host lattice.

34 The converse combinations of polymer and dopant and formulations using a polymer with both the su

35 e method to achieve lanthanide NC doping for dopant and host precursors with strongly different react

36 as a result of both the contribution of the dopant and of the confinement effect in the bidimensiona

37 that may couple to states induced by the Fe-dopant and the adsorbate molecule, and crossing between

38 is development is the incorporation of the p-dopant and the formation of a vertically phase-separated

39 ith the high triplet energy of the deep blue dopant and the high frontier orbital energies of hosts n

40 nto the fundamental interactions between the dopant and the semiconductor host.

41 ural features are created, using segregating dopants and a processing route that favours the formatio

42 The commonly used HTLs require hygroscopic dopants and additives for optimal performance, which add

43 s and in particular conjugated polymers, (2) dopants and counterions, (3) insulating polymers, and (4

44 23 to 25 K) by precipitating-out the cobalt dopants and giving larger overall a-lattice parameter.

45 ly-unrecognized possibility of incorporating dopants and impurities inside an otherwise perfect cryst

46 nsistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers.

47 , we report a combination of photo-switching dopants and organic phase-change materials as a way to i

48 Excess electrons from intrinsic defects, dopants and photoexcitation play a key role in many of t

49 rier concentrations can be achieved when the dopants and Sb atoms have similar electronic configurati

50 ave order and quenched disorder arising from dopants and strain.

51 ted between the excess charge brought by the dopants and the dopants' concentration depends on the la

52 es this without the introduction of external dopants, and therefore the tetragonal crystal structure

53 ed chemical environments induced by nitrogen dopant are revealed by XANES and RIXS measurements.

54 We demonstrate that these RE dopants are all trivalent and effectively substitute for

55 t room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied.

56 A small change in dopant arrangement can convert graphene from a semicondu

57 ferromagnetism assumes no essential role of dopant as a carrier of the magnetic moment, which was di

58 na in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubb

59 omagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichrois

60 ddition, Na and K are predicted to be n-type dopants at grain boundaries.

61 dopants, a new type of devices is developed: dopant-atom-based transistors.

62 The impact of dopant atoms in transistor functionality has significant

63 atomically precise introduction of group III dopant atoms into bottom-up fabricated semiconducting ar

64 h the expected position and concentration of dopant B atoms.

65 Herein, the first chiral dopant-based mass spectrometric assay, with its foundati

66 During the crystal growth, these dopant-based surface complexions became embedded inside

67 instantaneous potential field experienced by dopants becomes largely disordered due to thermal fluctu

68 mismatch of CdS/ZnS core/shell QDs on Mn(II) dopant behavior was studied.

69 le polymer/non-degradable conductive polymer/dopant, biodegradable conductive polymer/dopant or biode

70 ected not only by the presence of individual dopants, but also by their positions in the crystal.

71 etermined by their combination of lanthanide dopants, by their morphology, by their host matrices, an

72 This was further improved by adding Ni(2+) dopants (ca. 8 h).

73 conjugated polymer, a small-molecule p-type dopant can be incorporated by solid state diffusion into

74 was however found that nearly every employed dopant can be used to increase device performance, indic

75 activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-

76 the energy transfer between host CdS QDs and dopants can be finely turned in a wide range by dopant m

77 It is known that dopants can be subjected to strong diffusion in certain

78 The negatively charged dopants can drift upon application of an electric field

79 results indicate that the presence of donor dopants can significantly reduce activation barriers for

80 port, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect

81 Here, we reveal the surface segregation of dopant cations and oxygen vacancies and observe bonding

82 alculations indicate that introduction of Fe dopants changes the character of the conduction band min

83 ed by investigating structural and dynamical dopant characteristics via ab initio molecular dynamics

84 e localized primarily within covalent [MSe4] dopant clusters (M = Ag(+), Cu(+)).

85 [3]-Radialene-based dopant CN6-CP studied herein, with its reduction potenti

86 type and n-type doped, respectively, whereas dopant-compensated CH3NH3PbBr2.94Cl0.06 alloy has over t

87 Here we report a dopant compensation in alloyed OIHP single crystals to o

88 Secondary dopants comprising singlet fluorophores or iridium organ

89 e electrophosphorescent device with a graded dopant concentration profile in a broadened emissive lay

90 h dopant concentrations generally limits the dopant concentration to less than 1-5 mol% in lanthanide

91 integral for SEs, which is a function of the dopant concentration, and surface band-bending effects t

92 t the existence of the mobility edge at some dopant concentration.

93 asing monotonically with supersaturated gold dopant concentration.

94 excess charge brought by the dopants and the dopants' concentration depends on the latter.

95 ure of such polar domains, as created by low dopant concentrations (<0.5%).

96 ectron branch is modulated by varying the BV dopant concentrations and annealing conditions.

97 Luminescence quenching at high dopant concentrations generally limits the dopant concen

98 nce that the major quenching process at high dopant concentrations is the energy migration to the sur

99 al vapor deposition of titanium ethoxide and dopant concentrations of tungsten ethoxide at 500 degree

100 ping method incorporates supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into

101 n Fe-doped hexagonal ZnO and ZnS at very low dopant concentrations.

102 wer end of the temperature range for all the dopants considered.

103 oping chemistry, this study investigated the dopant-controlled enhancement of the rate of the chemica

104 protein analysis and how tandem IMS-IMS with dopants could provide better understanding of the confor

105 the host lattice, which determines the host-dopant coupling from the overlap between the dopant and

106 atalytic process in silicon nanowires yields dopant-dependent, massive and ordered 3D grooves with sp

107 The atomic % of dopant determined the particle shape.

108 e distinct properties resulting from various dopants, different doping levels and configurations, and

109 Upon the dopants' directional movement in P3HT, a dedoped region

110 k systems to modelling 'real' materials with dopants, dislocations, grain boundaries and interfaces;

111 ght emitting devices using XPT and XtBuCT as dopants displayed electroluminescence external quantum e

112 s and (ii) elastic interactions cause strong dopant-dopant interactions even at low doping fractions.

113 y landscape of strongly excited crystals and dopant-dopant interactions into account.

114 lloy nanoparticles with different numbers of dopants due to the similarities of metals in outmost ele

115 o melting where the lattice becomes weak and dopant dynamics exhibit strongly localized and heterogen

116 sults illustrate how describing nonclassical dopant dynamics requires taking the effective disordered

117 on substitution, defect engineering, and the dopant effect to address the above two critical issues i

118 olecular ions without evidence of solvent or dopant effects as observed in atmospheric pressure photo

119 and holes, edge effects, and the presence of dopant elements.

120 The OLEDs using DCBPy and DTCBPy as dopants emit blue and green light with EQEs of 24.0 and

121 minescence device based on 3DPyM-pDTC as the dopant emitter can reach an extremely high external quan

122 g these compounds either as host emitters or dopant emitters in suitable host matrix and exhibited gr

123 The chemical specificity of the different dopants enables interesting studies on the structure of

124 In this study, the use of a dopant enriched nitrogen (DEN)-gas combined with sheathl

125 gly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum

126 -ion batteries where the sample with 3% of N-dopant exhibits optimum performance with a capacity of 5

127 We found that varying the concentration of dopants exposed to the as-synthesized PbSe QDs controls

128 ectroscopy confirms that Ag acts as a p-type dopant for PbSe QDs and infrared spectroscopy is consist

129 TBAF) is demonstrated as an efficient n-type dopant for the conjugated polymer ClBDPPV.

130 eve a rough prediction on the suitability of dopants for a specific synthesis method.

131 Ten new efficient p-dopants for conductivity doping of organic semiconductor

132 ings open the way for full integration of RE dopants for optoelectronic functionalities in the existi

133 attraction of the negatively charged A-site dopants (for example, ) by the positively charged oxygen

134 Interestingly, the calculated dopant formation energies suggest that optimum carrier c

135 method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO cha

136 s these concerns, we designed a unicomponent dopant-free conductive polyurethane elastomer (DCPU) by

137 efficiency of 16.2% is demonstrated using a dopant-free DERDTS-TBDT HTM, while the DORDTS-DFBT-HTM-b

138 Developing dopant-free hole transporting layers (HTLs) is critical

139 -TCNE) is developed to serve as an efficient dopant-free hole-transporting material (HTM) for perovsk

140 ed by a facile synthetic route as a superior dopant-free HTL for lead-free tin-based perovskite solar

141 t, BTPA-TCNE can be employed as an effective dopant-free HTM to realize an efficient (PCE approximate

142 on ethylenediammonium/formamidinium with the dopant-free TPE HTL achieve a power conversion efficienc

143 s generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures.

144 the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and

145 can be achieved by spatially separating the dopants from the charge transport pathways.

146 are caused by precipitation and migration of dopants from the host layer to the adjacent layers.

147 mpty p-orbital with the extended pi-band for dopant functionality.

148 Dopant Ga in the cage-structured skutterudite Co4Sb12 su

149 cture calculations further predict that both dopants generate similar localized mid-gap states.

150 The dynamics of interstitial dopants govern the properties of a wide variety of doped

151 Different classes of chiral photoresponsive dopants (guests) capable of conferring light-driven reve

152 eover, enrichment of the gas with an organic dopant has led to an improved desolvation and ionization

153 nterest in nanostructures of silicon and its dopants has significantly increased.

154 the facial and the meridional isomers of the dopant have high efficiencies that arise from the unusua

155 Although a variety of stable molecular p-dopants have been developed and successfully deployed in

156 hexagonal graphene lattice with p- or n-type dopant heteroatoms.

157 figurations, and synergistic effects from co-dopants, hoping to assist a better understanding of dope

158 d semiconductor nanocrystals, the controlled dopant-host lattice coupling by dopant migration is stil

159 Arsenic is a promising p-type dopant; however, reproducible doping with high concentra

160 e of carbon substrate and amount of nitrogen dopants (i.e., graphitic nitrogen) were modulated by the

161 Numerous previous works suggested that dopants/impurities tended to segregate at the stacking f

162 mine the role of chemical ordering of the Pr dopant in a colossal magnetoresistant (La(1-y)Pr(y))(1-x

163 iral molecules have been used as an emissive dopant in an organic light emitting diode exhibiting ext

164 Ag(+) is an emerging electronic dopant in III-V and II-VI nanostructures, introducing in

165 ns reveal that hydrazine acts as an electron dopant in molybdenum disulfide, increasing its conductiv

166 embedding [(Se(IV)O3)2](4-) as an oxidizable dopant in the cluster core allows the oxidation of the m

167 The presence of antimony, as a dopant in the colloidal growth reaction for CuIn(1-x)Ga(

168 tem to pinpoint the exact coordinates of the dopant in the Si crystal.

169 bricated using the new materials as emitting dopants in 4,4'-bis(9H-carbazol-9-yl)biphenyl host exhib

170 sional distribution of aliovalent lanthanide dopants in ceria catalysts and their effect on the surfa

171 To our understanding, the role of dopants in controlling chemical processes is of fundamen

172 n levels of point defects and substitutional dopants in few-layer and bulk black phosphorus are calcu

173 lore the mechanism behind the orientation of dopants in films of organic host materials, we synthesiz

174 ition of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on

175 vestigate the distribution of substitutional dopants in nitrogen-doped graphene with regard to sublat

176 ity, make these materials very attractive as dopants in organic electronics.

177 alignment of the emitting molecules used as dopants in organic light-emitting diodes is an effective

178 c devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability ha

179 f the synthesized molecules with fluorescent dopants in poly(vinyltoluene) matrices resulting in comp

180 with single-site resolution using subsurface dopants in silicon.

181 Combining the two dopants in SnTe yields enhanced Seebeck coefficient and

182 that gold nanocrystals act as substitutional dopants in superlattices of cadmium selenide or lead sel

183 tical calculations show that the Mo2 C and N dopants in the material synergistically co-activate adja

184 exhibit well-segregated domains of nitrogen dopants in the same sublattice, extending beyond 100 nm.

185 t centers, we directly observe individual Ce dopants in w-AlN using annular dark-field scanning trans

186 d-state hyperfine transition of europium ion dopants in yttrium orthosilicate ((151)Eu(3+):Y2SiO5) us

187 paration using dried N2 (in one stage) and a dopant (in the other stage), could be a very powerful wa

188 Moreover, we revealed the amount of barium dopants incorporated was non-equilibrium and far beyond

189 Our analysis suggests dopant incorporation is heterogeneous beyond expectation

190 While dopant-induced changes in the properties of materials ha

191 uggests that the +8 charge state undergoes a dopant-induced conformational change.

192 In addition to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper do

193 al and global understanding of how different dopants influence the properties of molecular crystals.

194 dologies have been developed for introducing dopants inside the size-confined semiconductor nanocryst

195 A homogeneous incorporation of the Mn dopant into the rutile lattice was observed, and the loc

196 we explain the shuttling pathways of single dopants into and out of the nanoparticles.

197 Incorporating ferromagnetic dopants into three-dimensional topological insulator thi

198 ngle tryptophan substitution that acts as a "dopant," introducing an energy level closer to the elect

199 local coordination and are applied to probe dopant ion internalization.

200 existence of substitutional paramagnetic Mn dopant ions in mixed valence states (Mn(2+) and Mn(3+))

201 ructures of the nanocrystal host lattice and dopant ions, rendering a higher magnetic moment in bixby

202 ide NCs with transition-metal and lanthanide dopant ions.

203 io of the emission from the host lattice and dopant ions.

204 on misconception of cross-relaxation between dopant ions.

205 ficient charge transfer occurs only when the dopant is close to the donor moiety.

206 ule, a conjugated polymer, and a molecular p-dopant is developed and used in solution-processed organ

207 This study shows that the single dopant is shuttled into the hollow Au24 nanoparticle eit

208 on of tin ions and the average activation of dopants is observed.

209 the improvement is not so much caused by the dopant itself, as by the defects it eliminates from TiO2

210 tive to the STM tip orbital and the absolute dopant lattice site.

211 nstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor u

212 th particle types we found that the moderate dopant levels required for optimum magnetic properties d

213 Determination of the precise dopant location is an unsolved problem in applications f

214 ng blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are bel

215 e controlled dopant-host lattice coupling by dopant migration is still unexplored.

216 The dopant migration rate could be represented by the Arrhen

217 ants can be finely turned in a wide range by dopant migration toward the alloyed interface during ZnS

218 It was found that the dopant migration toward the alloyed interface of core/sh

219 thin films against de-doping and suppressing dopant migration.

220 Dopant mobilities of 10(-9) to 10(-8) cm(2) V(-1) s(-1)

221 onstrate that a vertical electric field from dopants modulates the band gap, owing to the giant Stark

222 als combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

223 s affected by the spatial arrangement of the dopant molecule with respect to the copolymer repeat uni

224 egradable segments, conductive segments, and dopant molecules into one polymer chain.

225 sable small-anion salts such as TBAF as an n-dopant of organic conjugated polymers possessing lower L

226 conducted to elucidate the influence of the dopant on both the rate and directional approach of sele

227 The influence of the dopant on shape is indirect; antimony catalyzes the inco

228 gregation and phase separation of aliovalent dopants on perovskite oxide (ABO3) surfaces are detrimen

229 provided insights into the effect of the Pt dopants on the optical properties and stability of the c

230 to significant mobility increases induced by dopants on the order of 1-5 cm(2) V(-1) s(-1), supported

231 ing the role of the chemical ordering of the dopants on the physical properties.

232 rmance bulk thermoelectric materials through dopants optimization.

233 cule accepts an electron from a near-surface dopant or (ii) when a photo-generated electron is transf

234 mer/dopant, biodegradable conductive polymer/dopant or biodegradable polymer/non-degradable inorganic

235 y thermalize before damage is induced on the dopant or host.

236 hermal ionization of NaCl is employed as the dopant or the ionizing reagent to ionize heavy metals.

237 The dopants or additives induce material instability that ca

238 without relying on additional photoreactive dopants or alignment layers.

239 of the spatial interplay between charge and dopant order that provides a basis for nanoscale phase s

240 The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by

241 ties, classical approaches often assume that dopant particles do not interact and travel through a st

242 pKa values (2.9 and 14.2), corresponding to dopants physi- and chemisorbing to graphene respectively

243 onance (EPR) results demonstrate that the 3d dopant plays a paramount role in the surface phase trans

244 ng of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient

245 nonionic conductivity among films made from dopant-polymer solutions.

246 h a related homopolymer, a four times higher dopant/polymer molar ratio is needed to observe signatur

247 By designing the chemical structure of the dopant precursor to vary the reactivity relative to that

248 s, forming heterostructures, and controlling dopant profiles.

249 Two-dimensional dopant profiling using the secondary electron (SE) signa

250 full 4d shell Ag(+) is nonmagnetic, and the dopant-related luminescence is ascribed to decay of the

251 We show that this peak is the result of a dopant-related vibration.

252 el of -5.87 eV, is the strongest molecular p-dopant reported in the open literature, so far.

253 als, a better understanding of the amount of dopants required to make their conductivity metallic is

254 oncentration of Ln-dopants suggests that the dopants reside in the vacant octahedral locations within

255 .4, by using Na2HAsO4.7H2O and NaAsO2 as the dopant, respectively (i.e., Synthesis 1 and Synthesis 2)

256 tantial resistance to ionic transport due to dopant segregation.

257 ted to the novel concept of super hydrogenic dopant (SHD)", where each Ce(4+) ion contributes an elec

258 Ideally, the introduction of dopants should not perturb the ordered microstructure of

259 ntum dot (QD) are strongly influenced by the dopant site inside the host lattice, which determines th

260 It is shown that dopant sites can be directly observed using c-AFM and th

261 The distribution of dopant sites in doped poly(3-hexylthiophene) (P3HT) thin

262 th experimental values, we find that the low dopant solubility in this material is not conductive to

263 e process of immersion of polymer films into dopant solutions.

264 may provide a basis for a fast screening of dopant species for electronic memory devices, or for und

265 cies, fluctuations and decay dynamics of the dopant states and determined the conditions most suitabl

266 can lead to the creation of solitary oxygen dopant states capable of fluctuation-free, room-temperat

267 and a comprehensive quantum treatment of the dopant-STM system to pinpoint the exact coordinates of t

268 Substitutional dopants such as C, Si, O or S do not give rise to shallo

269 Additionally, pH-sensitive, cationic dopants such as Eudragit E polymer caused clinically rel

270 damping, caused by the inclusion rare-earth dopants such as holmium, acts to suppress Walker breakdo

271 ion/activation by making use of redox active dopants such as Mn linked to oxygen vacancies and dopant

272 ts such as Mn linked to oxygen vacancies and dopants such as Ni that afford metal nanoparticle exsolu

273 lly doped semiconductors, where paramagnetic dopants (such as Mn(2+), Co(2+) and so on) couple to ban

274 the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overl

275 ng alumina with a sparse concentration of Ln-dopants suggests that the dopants reside in the vacant o

276 s in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinit

277 However, in conducting polymers, dopants tend to be randomly distributed within the conju

278 We find that Ca is the only dopant that induces superconductivity in graphene lamina

279 -dimensional epsilon-near-zero medium act as dopants that modify the medium's effective permeability

280 by varying the combination of lanthanide co-dopants, their concentrations, and their spatial distrib

281 By eliminating additional ionic dopants, these findings open up the entire class of orga

282 meraldine base form functions as a versatile dopant to couple NPs onto EEG through either electrostat

283 ility to determine the locations of P and As dopants to 5 nm depths will provide critical information

284 ation steps, which enables the use of strong dopants to access extreme work functions.

285 new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic co

286 On addition of chiral dopants to the liquid crystal, the films exhibit optical

287 At equilibrium, depending on the size of the dopant, trivalent cations and oxygen vacancies are found

288 ion caused by the action of light on the azo-dopant; upon photo-excitation, the azo-molecules undergo

289 rs, and this was attributed to the polymeric dopant used in this study.

290 graphene laminates above 1.8 K among several dopants used in our experiments, such as potassium, caes

291 The incorporation of dopants which exhibit magnetic long-range order is the m

292 aphene, with choice of suitable ad-atoms and dopants, which are introduced directly into the lattice

293 es and the nature and type of their included dopants, which can be controlled by varying the syntheti

294 Barium based dopants, which were used to control the crystal growth,

295 Moreover, the distribution of iron dopants with frozen magnetic moments is found to be non-

296 The incorporation of dopants with optical or magnetic functionalities into co

297 BPLC fabrication and the availability of azo-dopants with photosensitivity throughout the entire visi

298 In downscaled transistors, discrete dopants with uncontrolled positions and number induce fl

299 routes based on refined starting powders and dopants, with innovative sintering protocols and associa

300 the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn,