ライフサイエンスコーパス: epitaxial

1 ching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film

2 ngs for both the extensively studied bilayer epitaxial (2-2) and vertically architectured nanocomposi

3 ets or in situ growth of lateral or vertical epitaxial 2D semiconductor hetero-nanostructures are int

4 n a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine

5 n enhancement in emission after growth of an epitaxial AlN passivation layer.

6 pectroscopy in an InAs nanowire segment with epitaxial aluminium, which forms a proximity-induced sup

7 using aluminum flux contain co-crystallized, epitaxial aluminum.

8 as selenolate coverage increases, from being epitaxial and consistent with the initial thiolate struc

9 n cells can achieve higher efficiencies, but epitaxial and current matching requirements between the

10 Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directl

11 Toward wafer-scale epitaxial and grain boundary-free film is grown with alk

12 s supported on surfaces of other oxides, and epitaxial and nanoporous WO3 films.

13 exists in the interfacial region between the epitaxial and stray grains.

14 ate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe

15 microscopy under ambient conditions, a clear epitaxial arrangement despite the intrinsically distinct

16 Epitaxial attachment of quantum dots into ordered superl

17 magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors ha

18 of amorphous silicon (a-Si) waveguides on an epitaxial barium titanate (BaTiO3, BTO) thin film.

19 using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry stru

20 Depending on the substrate, the role of soft epitaxial binding mechanisms, ion pairing, hydrogen bond

21 itching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO3 grown by molecular beam

22 The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragon

23 re used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films.

24 f filtration on the nucleation and growth of epitaxial complex metal-oxide films based on the PAD pro

25 above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their

26 lculations also show that improvement of the epitaxial connections will lead to completely delocalize

27 blocks), but missing a fraction (20%) of the epitaxial connections.

28 aces) and the elastic energy associated with epitaxial constraints and domain formation.

29 ays, resulting in the formation of Pt NPs in epitaxial contact and linear alignment along a gold nano

30 Hg(x)Cd(1-x)Te quantum dots (QDs) and seven epitaxial core-shell QDs and measured their first and se

31 he amount of power before failure than their epitaxial counterparts.

32 islocation-mediated stress relaxation during epitaxial crystal growth comes from the study of inorgan

33 a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal subst

34 It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is o

35 Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical p

36 The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 +/- 1 muO

37 nanosheets make them ideal templates for the epitaxial deposition of nanostructures, which offer many

38 ng different semiconductor materials into an epitaxial device structure offers additional degrees of

39 nowires on silicon substrates, and (iii) the epitaxial directional single crystal OMS nanowires on to

40 had occurred on the mineral surface and that epitaxial distortion previously observed for Pu(IV) sorp

41 nt metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+delta films.

42 cturally elaborated post assembly by in situ epitaxial elongation of the membrane building blocks to

43 The synthetic procedure involves an epitaxial end-on growth of upconversion nanocrystals com

44 ometric frustration, lattice distortions and epitaxial engineering.

45 ed but still sizable magnetic moments of the epitaxial Fe ML on graphene, which is well resembled by

46 Here we present a comprehensive study of the epitaxial Fe/graphene interface by means of X-ray magnet

47 this coupling on the lithiation kinetics in epitaxial Fe3 O4 thin film on a Nb-doped SrTiO3 substrat

48 une the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner.

49 servation of negative capacitance in a thin, epitaxial ferroelectric film.

50 s is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroel

51 ,Nb,Ti)O3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field

52 ferent substrates for the confined growth of epitaxial ferromagnetic complex oxide 1D nanostructures.

53 a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L1(0)-MnAl films, as evidenced b

54 Fabrication of epitaxial FeSexTe1-x thin films using pulsed laser depos

55 The molecular mechanism of epitaxial fibril formation has been investigated for GAV

56 material deposition, the first layers of the epitaxial film wet the surface before the formation of s

57 in can manipulate the physical properties of epitaxial films and help understand the physical nature

58 ce only in single crystal magnetite or thick epitaxial films at low temperatures.

59 Generally, large grains or epitaxial films can be obtained at high temperatures.

60 Remarkably, the Co25Fe75 epitaxial films exhibit a damping constant <1.4 x 10(-3)

61 Epitaxial films exhibited 3D growth on sapphire and 2D s

62 mental study of spin ice by fabricating thin epitaxial films of Dy2Ti2O7, varying between 5 and 60 mo

63 The transition temperatures of epitaxial films of Fe(Te0:9Se0:1) are remarkably insensi

64 Epitaxial films of the pyrochlore Nd2Ir2O7 have been gro

65 been used to study vortex structures in thin epitaxial films of the superconductor MgB2.

66 of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-

67 Studies of (001)-, (101)- and (111)-oriented epitaxial films reveal that (111)-oriented films, in whi

68 authors achieve low magnetic damping in CoFe epitaxial films which is comparable to conventional insu

69 on, which enables the growth of high quality epitaxial films with desired structural and physical pro

70 Here, we report the growth of Co25Fe75 epitaxial films with excellent crystalline quality evide

71 For epitaxial films, a critical thickness (tc) can create a

72 stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited.

73 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafe

74 A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of

75 demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifyi

76 , thus providing a guide towards engineering epitaxial graphene for applications such as quantum metr

77 near-surface carbon compared to the case of epitaxial graphene growth.

78 Epitaxial graphene has proven itself to be the best cand

79 deposited graphene rather than exfoliated or epitaxial graphene is used, because layer transfer metho

80 Our epitaxial graphene nanoribbons will be important not onl

81 three dimensional (3D) unmodified 'as-grown' epitaxial graphene nanowall arrays (EGNWs).

82 due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily hig

83 harge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide.

84 electrons in different layers of multilayer epitaxial graphene provide an important mechanism for in

85 t measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plate

86 vestigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient

87 as a result of charge transfer from MoS2 to epitaxial graphene under illumination.

88 high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roug

89 The strong interaction of epitaxial graphene with Ni(111) causes a depletion of di

90 e to the weak van der Waals interaction with epitaxial graphene.

91 capsulated growth (MEEG) technique utilizing epitaxial graphene.

92 s in side-gated Hall bar nanodevices made of epitaxial graphene.

93 t the observation of an intrinsic bandgap in epitaxial graphene/boron-nitride heterostructures with z

94 Fe nanoparticle-assisted hydrogen etching of epitaxial graphene/SiC(0001) in ultrahigh vacuum.

95 of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC.

96 gers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors wit

97 rfaces typically develop in near-equilibrium epitaxial growth (bottom-up processing) of nanolayered c

98 The epitaxial growth and preferred molecular orientation of

99 The branching epitaxial growth behavior, as a result of aluminum-zonin

100 misorientations and maintain the coherently epitaxial growth between the TiN nanocrystallites and in

101 The composition of this epitaxial growth can be varied from CdSe to ZnSe, depend

102 ce applications, it is essential to optimize epitaxial growth for the precise control of nanowire geo

103 Using epitaxial growth in an alcoholic solvent, we show exquis

104 hydrogel was obtained as a result of living epitaxial growth in aqueous solvent and cell culture med

105 Furthermore, for the first time, we report epitaxial growth in aqueous solvent, achieving precise c

106 m(2)) single-crystal substrates, and confirm epitaxial growth in the <100>, <111>, and <751> orientat

107 ity and those contrasting forces that govern epitaxial growth into axially symmetric elongated aggreg

108 core-shell crystals, and their welding by 3D epitaxial growth into networks of crystals as single-cry

109 s phases is also observed during solid-phase epitaxial growth of <111> semiconductor crystals, where

110 sed growth conditions leading to anisotropic epitaxial growth of 2D zeolites with rates as low as few

111 intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-ph

112 Interestingly, we find that epitaxial growth of alpha1A/betaIII microtubules from he

113 e and charge state of color centers based on epitaxial growth of an inorganic passivation layer is pr

114 ing to investigate a contrasting system, the epitaxial growth of calcite (CaCO3) crystals on organic

115 d nanorods in Zn oleate solution can lead to epitaxial growth of CdSe particles rather than the expec

116 Here, we report epitaxial growth of Cu2O films on low cost, flexible, te

117 However, in situ epitaxial growth of dissimilar van der Waals materials r

118 rspective aims to provide information on the epitaxial growth of hetero-nanostructures based on ultra

119 We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride

120 High-quality epitaxial growth of inter-metallic MnPt films on oxides

121 Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilay

122 r-by-layer growth model commonly observed in epitaxial growth of metal films, featured by repeated nu

123 Epitaxial growth of NaCl on NaCl (001) is explored as a

124 s to the sub-phase metal ions and guides the epitaxial growth of nanosheets.

125 Various methods for the epitaxial growth of nanostructures based on ultrathin 2D

126 Here we systematically study the epitaxial growth of NC layers for the first time to enab

127 particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new direc

128 arching suitable substrates for the directly epitaxial growth of phosphorene.

129 ) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the

130 The epitaxial growth of the BaM film on sapphire was reveale

131 cause of intrinsic difficulties in achieving epitaxial growth of the mismatched materials required fo

132 raction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ.

133 promising alternative as substrates for the epitaxial growth of these heterostructures.

134 num can be readily stabilized through direct epitaxial growth of these metals on the 4H gold nanoribb

135 The key is the epitaxial growth of water-soluble Sr 3Al 2O 6 on perovsk

136 whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free t

137 lm (4 atomic layers) of potassium created by epitaxial growth on a graphite substrate.

138 ilms of potassium (up to 4 atomic layers) by epitaxial growth on a rigid support, graphite.

139 ew mechanism that is markedly different from epitaxial growth on metal surfaces, opening up the possi

140 cale heterostructures through solution-phase epitaxial growth on the tips of rutile TiO2 nanorods.

141 esses in controlling crystal morphology like epitaxial growth or growth front instabilities, thin fil

142 tial field of many substrates, which enables epitaxial growth to occur despite its presence.

143 s of micro-structured substrate for low cost epitaxial growth, active planar devices, etc.

144 In epitaxial growth, the stability of nanoscale cluster or

145 operties are only realized with high quality epitaxial growth, which limits substrate choice and thus

146 , thus enabling highly robust block-by-block epitaxial growth.

147 s require the use of suitable substrates for epitaxial growth.

148 ide materials can be strain-engineered using epitaxial growth.

149 ith unit-cell precision, using two different epitaxial-growth techniques.

150 e of 3.0-3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics.

151 ructure manipulation of the exchange bias in epitaxial hcp Cr2O3 films.

152 The advantages of these 2D epitaxial hetero-nanostructures for some applications, s

153 On the basis of the current status of 2D epitaxial hetero-nanostructures, the future prospects of

154 In epitaxial heterostructures combining layers of antiferro

155 expand the materials that can be prepared in epitaxial heterostructures with precise interface contro

156 Epitaxial heterostructures with precise registry between

157 b superconducting films proximity coupled to epitaxial Ho.

158 Epitaxial InAs quantum dots grown on GaAs substrate are

159 e proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires

160 Epitaxial indium tin oxide films have been grown on both

161 e (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs).

162 These results demonstrate that epitaxial inorganic passivation of defect-based quantum

163 tructures made of immiscible domains sharing epitaxial interfaces.

164 Comparing with previous reports on epitaxial KNN films, we find our samples to be of very h

165 wth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-tempera

166 od has been used to fabricate self-assembled epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O

167 urements of the magnetocapacitance effect in epitaxial La0.7Sr0.3MnO3/Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3

168 Epitaxial La1-x Srx CrO3 deposited on SrTiO3 (001) is sh

169 as (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surf

170 tical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates

171 ng NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.

172 In particular, a thin epitaxial layer of strontium titanate (SrTiO3) was grown

173 By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are

174 ent thermal expansion coefficients cause the epitaxial layers to have low quality.

175 ipated on the basis of those of the adjacent epitaxial layers.

176 ructure consisting of ultra-thin III-Nitride epitaxial layers.

177 orientation, registry and dimensions of the epitaxial layers.

178 oduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparen

179 Epitaxial lift-off process enables the separation of III

180 of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films.

181 Here we report epitaxial magnetic thin films in which an artificial sky

182 rom both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infra

183 Besides epitaxial mismatch that can be accommodated by lattice d

184 Chemical reactivity and stability of highly epitaxial mixed-conductive LaBaCo2O5.5+delta (LBCO) thin

185 monstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of comm

186 The epitaxial MoS2 crystals can be tailored from compact tri

187 ix material, illustrating the versatility of epitaxial nanocomposites for strain engineering.

188 Growth of epitaxial nanocomposites using lattice-mismatched consti

189 ain-induced transitions in the morphology of epitaxial nanoislands.

190 -temperature ferroelectricity in strain-free epitaxial nanometer-thick films of otherwise nonferroele

191 Growth modes of epitaxial nanostructures depend predominantly on the sur

192 Epitaxial nanostructures have generated a great deal of

193 The epitaxial nature of the growth processes used for the cr

194 The epitaxial nature, low strain character, and crystallogra

195 rained domains is proposed to understand the epitaxial nature.

196 The silicone matrix immobilizes the epitaxial nucleation sites through self-templated caviti

197 g different materials through aggregation or epitaxial nucleation, all of which lowers the accessible

198 e substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 6

199 l supracrystals through superlattice-matched epitaxial overgrowth along the existing colloidosomes.

200 The epitaxial overgrowth of a gold shell with a few atomic l

201 y growth and embedded into the epilayer, via epitaxial overgrowth.

202 es have been stabilized as nonstoichiometric epitaxial overlayers.

203 In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfect

204 a silicon-based photocathode with a capping epitaxial oxide layer can provide efficient and stable h

205 to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum i

206 de electronics relies on the availability of epitaxial oxide thin films.

207 ssolution followed by regrowth of a strained epitaxial Pb-rich calcite solid-solution at the calcite

208 The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also cover

209 urable head-to-head domain walls in as-grown epitaxial PbZr(0.2)Ti(0.8)O3 thin films.

210 The bubble domains appear in ultrathin epitaxial PbZr0.2 Ti0.8 O3 /SrTiO3 /PbZr0.2 Ti0.8 O3 fer

211 hat controlled insertion of He atoms into an epitaxial perovskite film can be used to finely tune the

212 tem is demonstrated in atomically controlled epitaxial perovskite heterostructures.

213 Quasi-epitaxial pi-pi alignment between the near-armchair FMN

214 This defect-induced exciton quenching in epitaxial QDs, previously demonstrated also in colloidal

215 Controlling the epitaxial quality and microstructures of vanadium dioxid

216 on electron microscope images prove the high epitaxial quality of the single crystal perovskite films

217 interaction is crucial for stabilizing this epitaxial quasicrystalline structure.

218 stablish that adatoms will experience remote epitaxial registry with a substrate through a substrate-

219 ay reflectivity measurements showed no clear epitaxial relation of cerussite to the calcite (104) sur

220 The epitaxial relationship between the YSZ and Nd2Ir2O7 is o

221 aplace pressure in the nanoparticles and the epitaxial relationship of this phase to the substrate.

222 Good epitaxial relationships of FePt (001) <100>//ZrN (001) <

223 The chemical composition, epitaxial relationships, and orientation play roles in t

224 rstanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire subst

225 Separately, epitaxial semiconductor devices such as spin qubits in s

226 recent progress in the design and growth of epitaxial semiconductor nanostructures in lattice-mismat

227 the formation of nanostructures in different epitaxial semiconductor systems we expect that the obser

228 anthanide-doped nanocrystals, and that inert epitaxial shell growth can overcome concentration quench

229 We show that after an inert epitaxial shell growth, erbium (Er(3+)) concentrations a

230 eved by incorporating a B-doped layer during epitaxial shell growth.

231 er propagation distance can be achieved with epitaxial silver at low temperature.

232 that this amount of strain can be induced in epitaxial SmB6 films via substrate in potential device a

233 Here, magnetically soft epitaxial spinel NiZnAl-ferrite thin films with an unusu

234 We then realize epitaxial (SrFeO2.5)1/(CaFeO2.5)1 thin film superlattice

235 Here, epitaxial SrRuO3 thin films with low surface roughness f

236 We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show

237 Our results suggest that the epitaxial stabilization growth of metastable-phase thin-

238 Here, we report epitaxial stabilization of the VO2 polymorphs to synthes

239 to these local pressures, an effect we term epitaxial stabilization.

240 The combination of epitaxial strain and defect engineering facilitates the

241 nd, theoretically, to be ferroelectric under epitaxial strain becoming a promising alternative to con

242 Epitaxial strain can induce collective phenomena and new

243 Here, we apply epitaxial strain engineering to tune the optical respons

244 out modifying chemical composition or use of epitaxial strain in the LaSrAlO4 Ruddlesden-Popper oxide

245 ed strontium cobaltite (SrCoOx) to show that epitaxial strain is a powerful tool for manipulating the

246 s which are not available otherwise, because epitaxial strain is avoided.

247 Despite extensive studies on the effects of epitaxial strain on the evolution of the lattice and pro

248 and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented f

249 the weak ferromagnetic moments under applied epitaxial strain using a combination of first-principles

250 esults exclude charge transfer, intermixing, epitaxial strain, and octahedral rotations/tilts as domi

251 ing, electric field magnitude and direction, epitaxial strain, temperature and so on, which can facil

252 ctronic structure calculations, we show that epitaxial strain, which is ubiquitous in MeRAM heterostr

253 abilities, rejuvenated near the interface by epitaxial strain.

254 e tuned by means of chemical pressure and/or epitaxial strain.

255 ution, which is, whereas, insensitive to the epitaxial strain.

256 rticular morphology is driven by anisotropic epitaxial strain.

257 red environment at each interface, caused by epitaxial strains, broken symmetry, off-stoichiometry an

258 Here we show that epitaxial strontium chromite films can be transformed, r

259 vide a foundation for the rational design of epitaxial structures in a fundamentally and practically

260 g blocks, control their thickness, and avoid epitaxial structures with long-range order.

261 train, which could provide high quality homo-epitaxial substrate.

262 Traditionally, closely lattice-matched epitaxial substrates have been required for the growth o

263 ity of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface.

264 ere, we address these issues by realizing an epitaxial superlattice as an HMM.

265 inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters.

266 Despite recent progress regarding the epitaxial synthesis of silicene and investigation of its

267 00) and (110) surface orientation for use as epitaxial templates for thin film photovoltaic devices.

268 oxygen reduction kinetics is realized in an epitaxial thin film that has the OVCs open to the surfac

269 e change doping in the monoclinic beta-Ga2O3 epitaxial thin film.

270 t's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferr

271 isfit dislocations generated in conventional epitaxial thin films and are suggested to form in respon

272 The epitaxial thin films are classified as dirty-limit super

273 e-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting

274 Here we report H c2 data for epitaxial thin films extracted from the electrical resis

275 the electronic structure evolution of SrFeOx epitaxial thin films is identified in real-time, during

276 s on structural and electrical properties in epitaxial thin films of SrFeO3-delta (SFO), where SFO is

277 Here we study epitaxial thin films of SrNbO3+delta and find that their

278 igh crystalline quality, highly oriented and epitaxial thin films of the lead-free (K0.5Na0.5)0.985La

279 on in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81G

280 MnAs epitaxial thin films on GaAs(001) single crystalline sub

281 ctor alloy systems using coherently strained epitaxial thin films specifically designed to produce la

282 Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating deposi

283 e-crystal fcc-Co(x)(Mg(y)Zn(1-y))(1-x)O(1-v) epitaxial thin films with high Co concentration up to x

284 poral strain profile in ferroelectric BiFeO3 epitaxial thin films, we report an optically initiated d

285 eld in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films.

286 across the temperature-driven MIT in NdNiO3 epitaxial thin films.

287 opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which

288 0.6Bi0.25Nd0.15)(3+) Fe(3+)O3, formed within epitaxial Ti and Nd doped BiFeO3 perovskite films grown

289 Utilizing high -quality epitaxial TiO2 films of the two polymorphs we evaluate t

290 ect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown

291 plex oxide films onto silicon substrates, by epitaxial transfer at room temperature.

292 vector analysis of the torques in a prepared epitaxial transition-metal ferromagnet/semiconductor-par

293 Epitaxial transparent oxide NixMg1-xO (0 </= x </= 1) th

294 ere, we report a novel approach to producing epitaxial twisted graphene on SiC (0001) and the observa

295 Epitaxial van der Waals (vdW) heterostructures of organi

296 metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3

297 semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer en

298 e (AHR) of Rh and Pt thin films sputtered on epitaxial Y(3)Fe(5)O(12) (YIG) ferromagnetic insulator f

299 erature superconducting (HTS) wires based on epitaxial YBa2Cu3O7-delta (YBCO) films to achieve the hi

300 ethod to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt stru