ライフサイエンスコーパス: epitaxy

1 anism was attributed to "size-dependent soft epitaxy".

2 servoir (for example, liquid- or vapor-phase epitaxy).

3 s are the only seed layers for van der Waals epitaxy.

4 es toward controlling film morphology during epitaxy.

5 ucleation and growth laws that govern atomic epitaxy.

6 aces were built at 30 K using molecular beam epitaxy.

7 GaInAs quantum wells grown by molecular beam epitaxy.

8 es on graphitic substrates by molecular beam epitaxy.

9 dio-frequency plasma assisted molecular beam epitaxy.

10 ) foils using plasma-assisted molecular beam epitaxy.

11 substrates by plasma-assisted molecular beam epitaxy.

12 the Ru(0001) substrate using molecular beam epitaxy.

13 with an MgO barrier grown by molecular beam epitaxy.

14 om Fe electrodes deposited by molecular beam epitaxy.

15 = 0.5 have been fabricated by molecular beam epitaxy.

16 interface, a unique feature of van der Waals epitaxy.

17 h-temperature plasma-assisted molecular beam epitaxy.

18 es WS2 and MoS2 by metalorganic vapour phase epitaxy.

19 axis-oriented BaTiO3 grown by molecular beam epitaxy.

20 on cobalt substrates by using molecular beam epitaxy.

21 grown directly on Si(001) by molecular beam epitaxy.

22 are grown on h-BN dielectric layers via vdW epitaxy.

23 ed conditions exhibit excellent cube-on-cube epitaxy.

24 variable thickness, grown by molecular beam epitaxy.

25 e prepared by plasma-assisted molecular beam epitaxy.

26 ting the existence of cooperative multilayer epitaxy.

27 uctures grown by organometallic vapour phase epitaxy.

28 of the IrO2 film grown using molecular-beam epitaxy affords the ability to extract the surface oxyge

29 It is thus named adaptive ionic layer epitaxy (AILE).

30 We use an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy sy

31 GaN, exhibiting substantial improvements in epitaxy and crystallinity relative to nanocrystalline sp

32 by employing a combination of molecular beam epitaxy and in situ angle-resolved photoemission spectro

33 l for on-chip photonics without the need for epitaxy and is at CMOS compatible processing parameters

34 sed germanene was obtained by molecular beam epitaxy and mechanical exfoliation.

35 guration arises from optimal two-dimensional epitaxy and that among the six polymorphs of 1, only the

36 desired improvements in electronic mobility, epitaxy, and crystal quality that provide encouragement

37 d with oxygen plasma-assisted molecular beam epitaxy, and recombinant MtrC or OmcA molecules coupled

38 th sides of the transition by molecular beam epitaxy, and using polarized neutron reflectometry to me

39 tion Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is c

40 O3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirem

41 rity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved ph

42 ale architecture can complement strain-layer epitaxy as a tool to strain engineer magnetoelectric mat

43 erovalent interface growth by molecular beam epitaxy as a way to modify the interface properties.

44 x </= 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 degrees C have b

45 les were grown using a simple molecular beam epitaxy-based fabrication protocol, and monitoring their

46 Our results demonstrate that epitaxy can be used to grow single-crystal analogous mat

47 This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temper

48 tion has been facilitated mainly by seeding, epitaxy, charged surfaces or mechanical means.

49 A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quali

50 nd Ge(100) platforms at gas-source molecular epitaxy conditions.

51 fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characteriza

52 mical terminations and thus enable selective epitaxy during the VAN growth.

53 solutions using electrochemical liquid phase epitaxy (ec-LPE) at low temperatures (T </= 90 degrees C

54 still interact with the layers grown during epitaxy (epilayers), as in the case of the so-called wet

55 tic bottlenecks play an important role in NC epitaxy, especially in the transition from sub-monolayer

56 rties, and the dopant diffusion during shell epitaxy, etc.

57 Although the droplet epitaxy fabrication method allows for a wide range of ma

58 re designed and fabricated by molecular beam epitaxy for use in mid-infrared (MIR) evanescent field l

59 Here we report the use of epitaxy-free wet chemical methods to create strained nan

60 We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T(')-La2CuO4

61 initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epita

62 Here, we report the van der Waals epitaxy growth of few-layer antimonene monocrystalline p

63 has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained

64 , including flexible ones, via van der Waals epitaxy growth.

65 wth of SrTiO(3) on silicon by molecular beam epitaxy has opened up the route to the integration of fu

66 erlattice structures grown by molecular beam epitaxy have been investigated for applications in therm

67 nate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfac

68 Oxide epitaxy in materials systems achieved through convention

69 demonstrates the efficacy of novel modes of epitaxy in providing new modalities of domain engineerin

70 ict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional

71 Hydrothermal epitaxy, in which single crystal thin films are directly

72 in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of rel

73 CE (geometric real-space analysis of crystal epitaxy) indicates that this interfacial configuration a

74 Epitaxy is a widely used method to grow high-quality cry

75 and conducting substrates via molecular beam epitaxy is presented.

76 We postulate that such long-range epitaxy is solvent-assisted, and that it originates from

77 Epitaxy is widely employed to create highly oriented cry

78 is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet wee

79 In this work, a combination of thin-film epitaxy, macro- and nanoscale property and switching cha

80 ayer substrates fabricated by molecular beam epitaxy made it possible to use x-ray interferometry to

81 ured MCT chips fabricated via molecular beam epitaxy (MBE) as waveguide enabling sensing via evanesce

82 uctor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications.

83 o types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate a

84 atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sa

85 owth of ZnSnxGe1-xN2 films by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is d

86 ayer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-sili

87 2) thin film was deposited by molecular beam epitaxy (MBE), and Au was implanted into the as-grown fi

88 strates using low-temperature molecular beam epitaxy (MBE).

89 ombination of these factors suggests a "soft epitaxy" mechanism of binding.

90 We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation

91 w strategies for improving the van der Waals epitaxy of 2D materials.

92 Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rare

93 Pulsed laser epitaxy of brownmillerite SrCoO2.5 thin films and their

94 Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on

95 epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions

96 sub-monolayer to multilayer coverage and the epitaxy of NCs with anisotropic shape.

97 res, but expands the utility of pulsed laser epitaxy of other materials as well.

98 is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposit

99 ismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain s

100 developed for the growth modeling on the vdW epitaxy of TMDs.

101 erature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atom

102 rties of thin films, grown by molecular beam epitaxy, of the spin-ladder compound [CaCu2O3]4, using t

103 d gold electrodes via organic molecular beam epitaxy (OMBE).

104 ructures, which were grown by molecular beam epitaxy on (001) DyScO3.

105 akes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface.

106 P films are constructed using molecular beam epitaxy on a Pt(111) substrate at low temperatures (<30

107 line thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemic

108 ene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuou

109 relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is

110 Here, we show that epitaxy on Ru(0001) produces arrays of macroscopic singl

111 ds was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates.

112 erimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckmi

113 0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier densi

114 of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition.

115 Such excellent structural epitaxy over the entire thickness results in exceptional

116 Different phenomena observed during vdW epitaxy process are analysed in terms of complex competi

117 ical simulations of zone annealing and chemo-epitaxy processing of BCP films to achieve long-range or

118 NC epitaxy reveals an exceptional strain tolerance.

119 Using molecular beam epitaxy, single-crystalline, rhombohedral thin films wit

120 However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsi

121 h, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering

122 h temperature using the laser molecular beam epitaxy technique.

123 proved by combining zone annealing and chemo-epitaxy techniques.

124 Epitaxy-the growth of a crystalline material on a substr

125 es microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal tw

126 We used atomic-layer molecular beam epitaxy to synthesize bilayers of a cuprate metal (La(1.

127 By adapting the concept of epitaxy to two-dimensional space, we show the growth of

128 on of MoSe2 nanoribbons using molecular beam epitaxy, via an unexpected temperature-induced morpholog

129 High-temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in e

130 thetic strategy that we term facet-selective epitaxy: we first switch off, and then switch on, shell

131 ricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to int

132 SnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10(