ライフサイエンスコーパス: etching

1 mask for subsequent material deposition (or etching).

2 owth, (3) templated growth, and (4) chemical etching.

3 layer deposition (ALD) assisted sacrificial etching.

4 d with platinum-salt infiltration and plasma etching.

5 as localised electron beam induced chemical etching.

6 tionality controlled metal-assisted chemical etching.

7 hrinkage of molecule in turn leading to core etching.

8 , atomic layer deposition, and oxygen plasma etching.

9 pproach, dry-etching and subsequent chemical etching.

10 aphy, thin film deposition, and reactive ion etching.

11 concentrations without aggregation or silver etching.

12 -dimensional nanomaterials capable of plasma etching.

13 emplate upon Au metallization and subsequent etching.

14 to the mechanism of metal-catalyzed chemical etching.

15 the surface area 20 times higher than before etching.

16 r in electrolyte solution by electrochemical etching.

17 aphy, thin-film deposition, and reactive ion etching.

18 bstrates generated by anodic electrochemical etching.

19 bination of metal staining and oxygen plasma etching.

20 ectronic shells that are resistant to oxygen etching.

21 , to electrochemical reactions and selective etching.

22 s on each chip by gas-phase Xenon difluoride etching.

23 e realised with techniques like reactive ion etching.

24 ynamics by altering the crystal through acid etching.

25 and exposed on the surface through oxidative etching.

26 countercation on the rate of oleate induced etching.

27 arious shapes are patterned via reactive-ion etching.

28 re discussed in detail include (1) templated etching, (2) selective dealloying, (3) anisotropic disso

29 th smear layer, 2) after 37% phosphoric acid etching, 3) after the treatments, and 4) after 6% citric

30 the Au25 nanoclusters, exhibiting the potent etching activity.

31 PVP can act as a capping and etching agent for protection of the outer surface nanopa

32 nd magnetic gold nanoclusters (MGNCs) as the etching agents is described.

33 of extra- and intracellular Ag by chemically etching AgNPs on the surface of algal cells and used dar

34 control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through

35 a member of the 'MXene' family), produced by etching aluminium from titanium aluminium carbide (Ti3Al

36 at CNTYMEs increased 3-fold after O2 plasma etching and 4-fold after antistatic gun treatment.

37 ich was prepared by Ag-assisted wet chemical etching and a photo-lithography process.

38 Overall, O2 plasma etching and antistatic gun treatment improve the sensiti

39 be yarn microelectrodes (CNTYMEs): O2 plasma etching and antistatic gun treatment.

40 Through sequential block etching and backfilling the resulting mesopores with dif

41 facile method combined with electrochemical etching and boiling water immersion is developed to fabr

42 his positive result, the simultaneous dentin etching and collagen protecting of GSE-containing phosph

43 tures often pushes the limits of traditional etching and deposition techniques, making it challenging

44 n of nanosphere lithography and reactive ion etching and evaluated as a field-effect transistor and c

45 The gold tips were fabricated by chemical etching and further encapsulated with carbon nanocones v

46 The conditions employed in the etching and growth processes also offer valuable insight

47 parison of scratches morphology after static etching and high-frequency ultrasonic agitation etching

48 es the entire Cu(2-x)Se core, accompanied by etching and partial collapse of the shell, yielding Cu(2

49 diffusion-limited behavior are found due to etching and partial dissolution of the initial ZIF-8 cry

50 The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatele

51 We could control the ratio of the etching and regrowth rates (R(etching) and R(regrowth))

52 lies on a transformation involving oxidative etching and regrowth.

53 anocrystals simply by adjusting the rates of etching and regrowth.

54 electron-beam lithography (EBL), plasma dry etching and size reduction processes.

55 s well as analyze the pillar sidewalls after etching and stationary phase functionalization.

56 -effective silica micro-sphere approach, dry-etching and subsequent chemical etching.

57 Our approach incorporates gentle etching and/or fracturing of outer oxide-acetate layers

58 e ratio of the etching and regrowth rates (R(etching) and R(regrowth)) simply by varying the amount o

59 (i.e., deposition, photolithography, and wet etching), and all manual machining steps are omitted.

60 quantum dots through cation exchange (ionic etching), and facilitates renal clearance of metal ions

61 ty against salt-induced aggregation, oxidant etching, and repetitive freeze/thaw treatment-because of

62 re removed from the corners during oxidative etching, and the resultant Pd(2+) ions could be reduced

63 probes were realized by a two-step selective etching approach that reduces the diameter of the nanotu

64 In this case, R(etching) approximately R(regrowth), and the resultant Pd

65 We present herein plasmon-assisted etching as an approach to extend the DIY theme to optics

66 ng SiNW prepared via metal-assisted chemical etching as anode material.

67 en (SF6/O2) inductively coupled plasma (ICP) etching at cryogenic temperatures and we find it to be s

68 emperature oxygen intercalation and graphene etching at higher temperatures and suggest that small mo

69 er the plasma reaction, suggesting selective etching at the graphene edges without introducing defect

70 carbides have been synthesized by selective etching, at room temperature, of Al from Nb2AlC and V2Al

71 by carbonization of the latter, followed by etching away the mesoporous silica template from it.

72 nocrystals with well-defined facets and then etching away the Pd templates.

73 electroless nickel plating, and subsequently etching away the template.

74 , with neither sacrificial template nor core etching, because of geometrical frustration.

75 enerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valenc

76 anostructures during metal-assisted chemical etching by their local pinning prior to etching is demon

77 and Ti2GeC, suggesting that electrochemical etching can be a powerful method to selectively extract

78 Subsequently, plasma etching can be used to fabricate the arched stripe array

79 Simulated etching confirms that etching can be viewed as reversed growth.

80 , we show that ultraviolet-induced oxidative etching can create pores in micrometre-sized graphene me

81 outcomes with bonded materials, we evaluated etching characteristics and bond strength of enamel in m

82 ays lithographically, and used the gas phase etching chemistry to narrow the ribbons down to <10 nm.

83 ow unprecedented selectivity when exposed to etching conditions involving plasmas.

84 Simulated etching confirms that etching can be viewed as reversed

85 EDTA root surface etching could enhance DOX availability in the gingival c

86 edox cycles on magnetite involve growing and etching crystal.

87 phically either by gold electroplating or by etching Cu laminated with polyimide.

88 on Arrays are fabricated over large areas by etching CVD-grown graphene.

89 curable fluid resin infiltrant (without acid etching)-deep into the normal enamel layer.

90 with the optimization of the grating coupler etching depth.

91 new analytical system based on Thermochromic Etching Discs (TED) technology is presented.

92 With a large amount of HCl, etching dominated the process (R(etching) >> R(regrowth)

93 2) a titanium surface roughened through acid etching (dual thermal-etched titanium [DTET]); and 3) a

94 tructures can also result due to the initial etching effect of metal oleates.

95 On the other hand, the etching effect of plasma can simultaneously and effectiv

96 high growth selectivity originates from the etching effect of water and the difference in the chemic

97 EDTA root surface etching enhances DOX availability in the GCF following i

98 divided into 5 groups: HF (hydrofluoric acid-etching), Er:YAG laser + HF, Graphite + Er:YAG laser + H

99 Here we combine isothermal growth and etching experiments with in situ scanning electron micro

100 The remaining SAM acted as a resist for etching exposed gold features.

101 1961, the development of an improved freeze-etching (FE) procedure to prepare rapidly frozen biologi

102 A combination of conventional wet-chemical etching for larger (>/=20 mum) microchannel features and

103 It required only lithography and dry etching for the pore definition and membrane release and

104 ng stacked metal sheets followed by chemical etching, free-standing 2D metal (e.g., Ag, Au, Fe, Cu, a

105 s caused profound proteinuria, and with deep-etching freeze-fracture electron microscopy, we resolved

106 Mechanistically, the process of etching gold with excess thiol is unclear.

107 unt of HCl, etching dominated the process (R(etching) >> R(regrowth)), resulting in the formation of

108 rocesses containing laser patterning and wet etching have demonstrated the advantages of easily tunin

109 Our device is fabricated by simply etching holes into a thin film of silicon.

110 Without any applied electric field and post etching, hollow nanostructures can be directly fabricate

111 d by inductively coupled plasma-reactive ion etching (ICP-RIE) technique to produce amino-functionali

112 nanostructures in solar cells without direct etching in a light absorbing semiconductor?

113 de (h-BN) basal plane surfaces via oxidative etching in air using silver nanoparticles as catalysts.

114 only advances our understanding of oxidative etching in nanocrystal synthesis but also offers a power

115 O2 plasma etching increased the sensitivity due to increased surfa

116 ate, whereas oleic acid alone does not cause etching, indicating the importance of the countercation

117 The sensing mechanism is based on CSH etching-induced fluorescence quenching of the bovine ser

118 The silver nanoparticle (AgNP) etching is based on the sensitivity of Ag to a hexacyano

119 ical etching by their local pinning prior to etching is demonstrated.

120 Staining and etching is developed for the fabrication of two-dimensio

121 ith the silicon substrate suggested that the etching is highly dependent upon the facet surface energ

122 ctional theory calculations suggest that the etching is initiated via a mechanism that involves the f

123 ymer reconstruction process and reactive ion etching is used to make the polymer mask.

124 Electrochemical etching is used to slice off single-crystalline AlGaN/Ga

125 mbination with anisotropic deep reactive ion etching, is used to produce uniform high aspect ratio si

126 We demonstrate unaccounted glass etching leading to erroneous results with label-free det

127 Plasma etching, lift-off, and ion implantation are realized wit

128 er was fabricated by metal-assisted chemical etching (MACE) procedure.

129 cesses governing the metal-assisted chemical etching (MacEtch) of silicon (Si).

130 cted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arr

131 layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and

132 nosheets can be improved if we adopt an acid etching method on LCO to create more active edge sites,

133 Our controlled etching method opens up a chemical way to control the si

134 ve been synthesized either by metal-assisted etching method or by vapor-liquid-solid (VLS) growth tec

135 LDI surfaces synthesized by metal-assisted etching method were the most efficient in terms of signa

136 btained by a facile one-step electrochemical etching method without any extra processing steps.

137 eaching and buffered hydrofluoric acid (BHF) etching methods.

138 mpact size, fabricated using an improved wet-etching micro-fabrication process with a higher qualifie

139 n the channel walls using micro reactive ion etching (micro-RIE).

140 We present here ideas in anisotropic etching, microscale device assembly/integration, and mod

141 suffer from high mass loss because of their etching nature.

142 trenches are fabricated directly from plasma etching of a block copolymer mask.

143 environment were prepared by electrochemical etching of carbon fibers and subsequent coating with ele

144 entials in aqueous solution causes oxidative etching of carbon thereby constantly renewing the electr

145 ian blue-type thin films, formed by chemical etching of Co(OH)1.0(CO3)0.5.nH2O nanocrystals, yield a

146 bons using Fe nanoparticle-assisted hydrogen etching of epitaxial graphene/SiC(0001) in ultrahigh vac

147 ntraperitoneal tumor targeting and selective etching of excess untargeted quantum dots.

148 iator is a necessary component for efficient etching of gold by thiolates.

149 Etching of gold with an excess of thiol ligand is used i

150 ly considered the role of oxygen in thiolate etching of gold.

151 We review the selective etching of graphene to form edges and nanopores, which h

152 noporous silicon produced by electrochemical etching of highly B-doped p-type silicon wafers can be p

153 specific (edge and vertex) deposition of Pt, etching of inner Au, and regrowth of Au on the Pt framew

154 on traditional lithography and selective wet-etching of MgO.

155 Etching of Mmp20KO surfaces left little enamel, and the

156 Unexpected etching of nanocrystals, nanorods, and their heterostruc

157 d after 500 cycles, which is ascribed to the etching of P into solution, as well as the oxidation of

158 So far, the guided etching of polymer films, focused ion-beam sculpting, an

159 tion of oxidant (X > 7.7) leads to oxidative etching of precursor colloids into significantly smaller

160 y confined to chemical and irradiation-based etching of preformed nanostructures.

161 Although HF etching of Si surfaces is known to produce H-terminated

162 con nanoparticles (NPs), obtained via anodic etching of Si wafers, as a basis for undecylenic acid (U

163 diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurat

164 dvances in microfluidics involved mainly the etching of silicon and glass, the economics of scaling o

165 eedles fabricated by metal-assisted chemical etching of silicon can access the cytosol to co-deliver

166 Photoelectrochemical etching of silicon can be used to form lateral refractiv

167 tion of the catalyst structures resulting in etching of silicon features with rotational geometry.

168 ized by silver-assisted electroless chemical etching of silicon nanowires generated on a silicon wafe

169 rising single atomic gold-catalyzed chemical etching of silicon.

170 We show that DNA promotes/inhibits the etching of SiO(2) at the single-molecule level, resultin

171 n locally enhance the rate of vapor-phase HF etching of SiO2 to produce a SiO2 trench that is several

172 MXenes are produced by selective etching of the A element from the MAX phases, which are

173 ctures have also been generated by selective etching of the core substrates.

174 ment of DOX blended with beta-TCP after EDTA etching of the exposed root surfaces (DOX-beta-TCP + EDT

175 lowed by the placement of DOX-COL after EDTA etching of the exposed root surfaces (DOX-COL + EDTA).

176 After HF etching of the inorganic core, dual-responsive polymeric

177 Etching of the MOF with 1 M aqueous HCl followed by 5% H

178 s allows in flight purification by selective etching of the non-diamond carbon and stabilization of t

179 Indium Tin Oxide (ITO) and rGO layer without etching of the rGO layer.

180 At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from t

181 Here, we report 53 pm to 731 pm etching of the surface silicon oxide over a 12-h period

182 WO3 precursor and protects against oxidative etching of the synthesized monolayers.

183 eans of a minimally destructive surface acid etching of tooth enamel and subsequent identification of

184 Lateral surface etching of two-dimensional (2D) nanosheets results in ho

185 mably hydrogen terminated GNRs (sub-5 nm) by etching of wide GNRs derived from unzipping of multiwall

186 of a nanoporous gold surface by dealloying (etching) of a 585 gold plate (58.5% Au, 30% Ag, and 11.5

187 sea urchins (euechinoids), but the impact of etching on skeleton mechanical properties is almost unkn

188 ron/ion beam processing, UV exposure, or wet etching on target substrates.

189 mpared with traditional probes fabricated by etching or conventional sputter erosion, field-directed

190 y attributed to the electrocatalysis-induced etching or dissolution of Pt nanoparticles.

191 ted by adding materials without the need for etching or dissolution, processing is environmentally fr

192 size augmentations through either oxidative etching or seed-mediated growth of purified, monodispers

193 Modulation of the etching parameters allowed control of the nano-pore size

194 rates to different analytes depending on the etching parameters.

195 Mmp20KO surfaces left little enamel, and the etching pattern was indistinguishable from unetched surf

196 biophysical effects on the mineral including etching, penetration and formation of new biominerals.

197 For CSE, the self-etching primer was applied and treated with 0.3 M EDC fo

198 Acid etching prior to cement application increased microhardn

199 The etching procedure provided a single-piece combination of

200 surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to uti

201 were prepared via an anodic electrochemical etching procedure, resulting in pSi particles with diame

202 We have developed a selective chemical etching process based on the use of hydrochloric acid so

203 Attenuation of the etching process by radical scavengers in the presence of

204 mploys chronoamperometric pulsing in a 5 min etching process easily compatible with batch manufacturi

205 The dry-etching process is applicable to a wide variety of subst

206 Though, the sensitivity of the dry etching process is lower than the traditional "wet" elec

207 to elucidate if HAp released from the dental etching process is sufficient to trigger it.

208 ate surface was studied before and after the etching process using different analytical techniques li

209 Conventional wet-etching process was performed to form the nanocone-array

210 matic study varying parameters in the plasma etching process was performed to understand the relation

211 2 and SF6 flow rates in the cryogenic plasma etching process, different surface morphologies of the b

212 r than the traditional "wet" electrochemical etching process, it is suitable for many applications an

213 During the deep reactive ion etching process, the sidewalls of a silicon mold feature

214 a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to b

215 m-thick crystalline silicon chip by chemical etching process, which produced a flexible silicon chip.

216 sm in which the oxygen radical initiates the etching process.

217 s of fs laser pulse trains followed by a wet etching process.

218 upled with an inductively coupled plasma dry etching process.

219 acids do not interfere with such CSH-induced etching process.

220 es PL quenching of the C-dots@RGO through an etching process.

221 of the devices we have prepared without this etching process.

222 Ap released from dental substrate during the etching process.

223 thin film vacuum deposition and reactive-ion etching processes eliminating complicated processes of d

224 Control over the deposition and etching processes is demonstrated by several parameters:

225 ynthesis without the need for patterning and etching processes that waste material and create surface

226 lithography technique and subsequent dry/wet etching processes.

227 Subsequent selective etching produces monoliths with morphologies that can be

228 latively hydrophilic surface after O2 plasma etching provided better resistance to fouling than unmod

229 Subsequent etching quenches excess quantum dots, leaving a highly t

230 Moreover, a detailed study of the etching rate as a function of the nanoparticle surface f

231 Specifically, the etching rate for Au nanocubes with {100}-terminated face

232 mic force microscope imaging showed that the etching rates for single-layer and few-layer (>/=2 layer

233 The observed layer-dependent etching rates reveal the relative strength of the graphe

234 Regenerative electroless etching (ReEtching), described herein for the first time

235 off scheme that minimizes the amount of post-etching residues and keeps the surface smooth, leading t

236 Reactive ion etching (RIE) of the asymmetric films forms unusual, rou

237 eres that was formed during the reactive ion etching (RIE) process.

238 ge-scale integration (VLSI) and reactive ion etching (RIE), as two-dimensional periodic relief gratin

239 By using reactive ion etching (RIE), the feature size of the silicon oxide pil

240 ntional optical lithography and reactive ion etching (RIE).

241 Sandblasting and acid etching (SBAE; control) Ti microtopography was coated wi

242 Results show that a short etching sequence with C(60)(+) ions can be used to clean

243 lm organic coatings followed by reactive ion etching serve as highly efficient means for selectively

244 tured using inductively coupled plasma (ICP) etching, serving as photonic waveguides for radiation em

245 pproach to fabricate shaped nanoparticles by etching specific positions of atoms on facets of seed na

246 It is shown that with careful etching, sputtered Nb films can make high-quality and tr

247 cts, removing the need for any developing or etching steps but at the same time leading to true 3D de

248 substrates typically involve one or more wet-etching steps.

249 By etching supercapacitor electrodes into conductive titani

250 s made in polyester sheets using a CO2 laser etching system.

251 g to the highly generic nature of the plasma etching technique, the methodology developed in this stu

252 ecent research into thin-film deposition and etching techniques for mid-infrared materials shows pote

253 overcome this difficulty by adapting angled-etching techniques, previously developed for realization

254 r nanostructures defined by lithographic and etching techniques.

255 for the first time developed a simple plasma-etching technology to effectively generate metal-free pa

256 -plane chemical ordering, and by selectively etching the Al and Sc atoms, we show evidence for 2D Mo1

257 nally hollow nanocages in the size ~10 nm by etching the centre of {200} facets.

258 ed magnetization reversal can be achieved by etching the continuous BiFeO3 film into isolated nanoisl

259 Thereafter etching the gold electrode significantly contributed to

260 Even at optimized experimental conditions, etching the gold electrodes could not be completely supp

261 of the bimodal materials can be modified by etching the pore walls with various synthesis solvents f

262 The final products, after etching the PS, generated a highly ordered Au-nanohole a

263 e electrode is obtained by electrochemically etching the Pt from the disk nanoelectrode.

264 single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the op

265 n-beam (e-beam) lithography and reactive-ion-etching, the PhC sensing platform allows optical detecti

266 d lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pa

267 with acetic acid as well as electrochemical etching, these FePtM NRs were converted into core/shell

268 bstrate using either Focused Ion Beam or wet etching through a block co-polymer mask.

269 ane was microfabricated by deep reactive ion etching through a porous aluminum oxide layer.

270 anowell arrays were prepared by argon plasma etching through an alumina mask.

271 al pretreatment (Sr enrichment) and chemical etching (Ti enrichment).

272 surfaces was found to increase linearly with etching time where the pore size ranged from 4 to 12 nm

273 was evaluated on the premise of a 30-second etching time.

274 inner lumen of halloysite may be adjusted by etching to 20-30% of the tube volume and loading with fu

275 combining GSE treatment with phosphoric acid etching to address the issue.

276 move the Pd cores through selective chemical etching to generate Rh hollow nanoframes with different

277 res using 'short' or 'extended' reactive ion etching to produce 30-60 nm (diameter) nanodots or 100-2

278 imide substrate using UV lithography and wet etching to produce flexible transparent conducting elect

279 lf-assembled nanospheres, followed by custom-etching to produce nanometre size features on large-area

280 ntinuous precipitation followed by selective etching to remove one of the phases.

281 as the sensing region, followed by SF(6) dry etching to suspend the structure.

282 proach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes

283 hing and high-frequency ultrasonic agitation etching was devoted in our case.

284 Oxidative etching was established by tracking surface-localized fl

285 n membrane (COL) after 24% EDTA root surface etching was evaluated.

286 O2 plasma etching was performed by a microwave plasma system with

287 By chemical etching, we also can image the structural fingerprint fo

288 n and removing it afterward through chemical etching, we have been able to make the cluster surface h

289 here lithography, and multistep reactive ion etching were incorporated into nanofluidic channels.

290 ete dipole approximation and selective alloy etching were used to correlate this optical response wit

291 During etching, when ice is allowed to sublime after fracturing

292 ed on hydrofluoric acid (HF) electrochemical etching which is undesirable given the significant safet

293 nsport, and also solution ions and thin film etching, which can form the foundation of future studies

294 non-scratched fused silica surfaces after HF etching with high-frequency ultrasonic agitation were al

295 re mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respe

296 The method, based on etching with NH4F, is also applicable to other cage-cont

297 his communication indicates the potential of etching with sub- and/or supercritical water for reprodu

298 of the gold surface has shown that overnight etching with warm nitric acid increases the surface area

299 um) are formed by successive electrochemical etchings with different current densities.

300 stencil mask and oxygen plasma reactive-ion etching, with a subsequent polymer-free direct transfer