ライフサイエンスコーパス: ferroelectric

1 r3) is pyroelectric, which implies it can be ferroelectric.

2 c, piezoelectric or pyroelectric response of ferroelectrics.

3 ics of many types of domain walls in various ferroelectrics.

4 ient energy harvesting devices using polymer ferroelectrics.

5 actions in uniaxial as opposed to multiaxial ferroelectrics.

6 stood 'waterfall' effect observed in relaxor ferroelectrics.

7 a crucial role in photovoltaic properties of ferroelectrics.

8 ly used to describe the structure of relaxor ferroelectrics.

9 structural effects on defect interactions in ferroelectrics.

10 We observed long range ordering of ferroelectric 109 degrees stripe nanodomains separated b

11 tric-field control has been demonstrated for ferroelectric 180 degrees domain walls, similar control

12 TiO3-BiZn0.5Ti0.5O3 (BT-BZT) polycrystalline ferroelectrics, a prototypical lead-free piezoelectric w

13 ectric toroidal order and a high-temperature ferroelectric a1/a2 phase.

14 This long-range array of ferroelectric and ferroelastic domains can be useful for

15 Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-orie

16 ultiferroics, in which (anti-)ferromagnetic, ferroelectric and ferroelastic order parameters coexist,

17 ifunctional materials contained simultaneous ferroelectric and ferromagnetic ordering have been reali

18 can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial c

19 ctric multiferroic because it maintains both ferroelectric and magnetic ordering to well above room t

20 realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend

21 Polarization switching in ferroelectric and multiferroic materials underpins a bro

22 strate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases.

23 lp understand the strong competition between ferroelectric and paraelectric phases as well as the pro

24 surface, and that spinoidal decomposition of ferroelectric and paraelectric phases occurs in non-stoi

25 ss a wide range of temperatures, in both the ferroelectric and paraelectric phases.

26 However, the control of ferroelectric and phase switching and its correlation wi

27 The crystalline growth and the local ferroelectric and piezoelectric properties were evaluate

28 This work suggests a material with combined ferroelectric and semiconducting features could be a pro

29 n improving large polarizations in ultrathin ferroelectrics and are meaningful for the development of

30 new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design

31 ated with historical data from literature on ferroelectrics, and expanded to functional materials for

32 are critical in determining the response of ferroelectrics, and the ability to controllably create,

33 n, rendering it ineffective for conventional ferroelectric applications and polarization switching.

34 While ferroelectrics are birefringent and non-linear optically

35 Among such ferromagnetic ferroelectrics are conical spin spiral magnets with a si

36 in and enhance the polarization in nanoscale ferroelectrics are of scientific and technological impor

37 or decades due to the fact that vacancies in ferroelectrics are often charged and polarization in cha

38 rise to a polarization comparable to that of ferroelectric ATiO3.

39 While polarization inherently exists in ferroelectric barium titanate (BaTiO3), its high permitt

40 efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic

41 eld induced structural phase transition in a ferroelectric BaTiO3 nanoparticle.

42 ved in zero magnetic field using strain from ferroelectric BaTiO3 substrates to control perpendicular

43 0.3MnO3 electrodes separated by an ultrathin ferroelectric BaTiO3 tunnel barrier, where a head-to-hea

44 By simply adding the nano-ferroelectrics (BaTiO3 nanoparticles) into the cathode,

45 As ferroelectrics become thinner, maintaining a stable pola

46 on acceptor and donor molecules that exhibit ferroelectric behavior along two distinct crystallograph

47 ature of the cocrystals, required to observe ferroelectric behavior, is demonstrated using second har

48 All samples showed typical ferroelectric behavior.

49 prototypical example is PbTe whose incipient ferroelectric behaviour has been recently associated wit

50 erization that probes the full extent of the ferroelectric behaviour.

51 ), retains the polar space group of 1 and is ferroelectric below 260 K.

52 ies due to the formation of a self-polarized ferroelectric beta-phase and the creation of an electret

53 be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr)3Ti2O7 crystals.

54 e BaTiO3 nanoparticle in a composite polymer/ferroelectric capacitor to study the behavior of a three

55 Ferroelectrics carry a switchable spontaneous electric p

56 Flexible lead-free ferroelectric ceramic nanowire arrays exhibit a unique c

57 (PZT 52/48) and PbZr0.95Ti0.05O3 (PZT 95/5) ferroelectric ceramics under identical loading condition

58 as high as 1% in the voltage range near the ferroelectric coercive field.

59 nganese(II), an organic-inorganic perovskite ferroelectric crystal processed from aqueous solution, h

60 hombohedral Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) ferroelectric crystal.

61 ielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic

62 nd conductivity through symmetry lowering in ferroelectric crystals.

63 rged conducting domain walls in the improper-ferroelectric Cu3B7O13Cl.

64 (diol) exhibit significant dielectric and/or ferroelectric dependence on different diol molecules.

65 ly 10(5) ) ever reported in room-temperature ferroelectric devices, opening new avenues for engineeri

66 n nanostructures is needed for miniaturizing ferroelectric devices.

67 capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide ran

68 c material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, w

69 The behavior of ferroelectric domain under applied electric field is ver

70 Ferroelectric domain walls are of great interest as elem

71 Ferroelectric domain walls constitute a completely new c

72 Ferroelectric domain walls have continued to attract wid

73 Ferroelectric domain walls hold great promise as functio

74 field control of the electronic transport at ferroelectric domain walls.

75 -proven fractional dimensionality of 2.5 for ferroelectric domain walls.

76 with local strains generated by a network of ferroelectric domain walls.

77 the developing of nanoscale devices based on ferroelectric domain walls.

78 Polymer thin films with patterned ferroelectric domains are attractive for a broad range o

79 their crystalline growth with highly ordered ferroelectric domains arrangements and, consequently, gr

80 grees domains walls; while for KNNLa/NSTO100 ferroelectric domains grow with the polarization pointin

81 e charges are naturally formed on unscreened ferroelectric domains in ambient condition.

82 m the collected surface charges on the poled ferroelectric domains in the P(VDF-TrFE) thin films.

83 mains, can be described by ferromagnetic and ferroelectric domains only.

84 insights into the formation and evolution of ferroelectric domains when the sample is ferroelectric d

85 formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling.

86 t by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-or

87 In this work, ferroelectric domains, surface termination, average latt

88 Observation of a new type of nanoscale ferroelectric domains, termed as "bubble domains"-latera

89 rmed due to competing interactions involving ferroelectric domains.

90 cale inhomogeneity, that coexist with normal ferroelectric domains.

91 i-step ferroelectric switching with multiple ferroelectric domains.

92 Nanometer-scale ferroelectric dots and tubes have received a great deal

93 of ferroelectric domains when the sample is ferroelectric during the growth process.

94 suggest a facile method to discriminate the ferroelectric effect from the electromechanical (EM) res

95 n be used as a new tool to differentiate the ferroelectric effect from the other factors that contrib

96 polysulfide entrapping strategy based on the ferroelectric effect has been demonstrated for the first

97 k Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of

98 Structure-property relationships in ferroelectrics extend over several length scales from th

99 ions of SrRuO3 /BaTiO3 /SrRuO3 (SRO/BTO/SRO) ferroelectric (FE) capacitors.

100 oping multifunctional materials, spin-driven ferroelectrics featuring both spontaneous magnetization

101 ittle fatigue by realization of a reversible ferroelectric-ferroelectric phase transition in [011] cu

102 ice distortions and/or octahedral rotations, ferroelectric-ferromagnetic interfaces are affected by s

103 Ferroelectrics (FEs) are materials of paramount importan

104 and capacitance tunable by external stimuli (ferroelectric field and magnetic field).

105 loited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-eff

106 Here we report a true ferroelectric field effect-carrier density modulation in

107 performance comparable to existing thin-film ferroelectric field-effect transistors.

108 ly enhances the pyroelectric response of the ferroelectric film under near-infrared irradiation.

109 rally deteriorated or even vanishes when the ferroelectric films are downsized to unit cell scale.

110 e also demonstrate the use of such patterned ferroelectric films for near-infrared sensing/imaging.

111 spontaneous polarization in ultrathin BiFeO3 ferroelectric films is reported.

112 e report dielectric ultracapacitors based on ferroelectric films of Ba(Zr0.2,Ti0.8)O3 which display h

113 the role of strain-polarization coupling in ferroelectric films with nontrivial anharmonicities and

114 Examples include improved ferroelectrics for memory devices and materials that hos

115 modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications i

116 lear how the underlying structure of relaxor ferroelectrics gives rise to their defining properties,

117 ization is usually coupled to strain, making ferroelectrics good piezoelectrics.

118 wo-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate

119 derlying piezoelectric properties of relaxor ferroelectrics has yet to be established.

120 made in this subject especially on magnetic/ferroelectric heterostructures.

121 Finally, PBI-OVDF and Pc-OVDF materials show ferroelectric hysteresis behavior together with high rem

122 chers have demonstrated that BiFeO3 exhibits ferroelectric hysteresis but none have shown a strong fe

123 ally leaky materials as MAPbI3, we show here ferroelectric hysteresis from well-characterized single

124 This excludes normal measurements of a ferroelectric hysteresis loop, to prove ferroelectricity

125 vial texture for the square) and, hence, non-ferroelectric, in contrast to previous predictions from

126 While neither perovskite AVO3 nor AFeO3 is ferroelectric, in the double perovskite A 2VFeO6 a 'comp

127 states near the band edges that leads to the ferroelectric instability in PbTe.

128 -induced polarization reversal and strain in ferroelectrics is an ongoing challenge that so far has o

129 nt of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment -

130 ty of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current a

131 cluding normal-, relaxor-, organic- and anti-ferroelectrics is imperative for exploiting new flexible

132 The tunability of electrical polarization in ferroelectrics is instrumental to their applications in

133 Formation of domain walls in ferroelectrics is not energetically favourable in low-di

134 ced conductivity at specific domain walls in ferroelectrics is now an established phenomenon.

135 The next step, proving it is (not) ferroelectric, is challenging, because of the material's

136 layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with stron

137 More importantly, the introduction of the ferroelectric layer induces the memory window without dr

138 ty for resonator with an arbitrary number of ferroelectric layers is formulated.

139 Finally, the possible application of the two ferroelectric layers structures for switchable microwave

140 ical inputs, with each connected to separate ferroelectric layers that act as the multi-level control

141 ross the interface due to strain-rejuvenated ferroelectric-like instabilities in the materials.

142 3 substrate is accompanied with head-to-head ferroelectric-like polarizations across the interface du

143 The ferroelectric-like polarizations and electron-hole juxta

144 owever, one remaining issue of ferromagnetic/ferroelectric magnetoelectric bilayer composite is that

145 eculiar features of domain walls observed in ferroelectrics make them promising active elements for n

146 and hysteretic dielectric polarization from ferroelectric material in vacuum (P 10(-6) torr).

147 fication with dielectric polarization from a ferroelectric material in vacuum to dramatically enhance

148 Single-crystal perovskite ferroelectric material is integrated at room temperature

149 h orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic ins

150 To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW)

151 ing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nano

152 r control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of thei

153 The device potential of these 2D ferroelectric materials is further demonstrated using th

154 in-film, solution-processable supramolecular ferroelectric materials is rare.

155 arization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltai

156 Ferroelectric materials possess spontaneous polarization

157 ates the potential of preparing a new set of ferroelectric materials simply by attaching OVDF oligome

158 ly, the advantageous functional responses in ferroelectric materials that make them attractive for us

159 s (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a seq

160 By unravelling the correlation between ferroelectric materials' responses to solar irradiation

161 ent suggests that, despite the complexity of ferroelectric materials, typical ferroelectric switching

162 steresis loop that is a signature feature of ferroelectric materials.

163 predicting and optimizing the properties of ferroelectric materials.

164 fuels devices can be enhanced by the use of ferroelectric materials.

165 l structure on the macroscopic properties of ferroelectric materials.

166 olution single crystals is a breakthrough in ferroelectric materials.

167 d, which makes them unstable and uncommon in ferroelectric materials.

168 c, pyroelectric and electronic properties of ferroelectric materials.

169 cs, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotatio

170 he macroscopic polarization of a surrounding ferroelectric matrix-is reported.

171 film thickness, allowing the realization of ferroelectric memories with device dimensions far below

172 rical read-out of the polarization states in ferroelectric memories.

173 The existing ferroelectric memory cells are based on the two-level st

174 dy the multiferroic domains in ferromagnetic ferroelectric Mn2GeO4 using neutron diffraction, and sho

175 Here we propose ferroelectric multibit cells (FMBC) utilizing the abilit

176 A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable du

177 9.0 microC cm(-2) are successfully probed in ferroelectric nanocapacitors and thin films, respectivel

178 axation of the spontaneous polarization in a ferroelectric nanocrystal.

179 icity to the finite lateral-size effect of a ferroelectric nanodot with an additional effect possibly

180 l model, our simulations show that arrays of ferroelectric nanosynapses can autonomously learn to rec

181 We note that the material's ferroelectric nature, can, but need not be important in

182 Adding a ferroelectric negative capacitor to the gate stack of a

183 phthalocyanines (Pc) bearing three to eight ferroelectric oligomers at their periphery.

184 in thin film samples induced by traditional ferroelectric or flexible substrates is usually volatile

185 ic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quart

186 Moreover, the ferroelectric order couples to the ferrimagnetism, enabl

187 order parameters coupled to ferroelastic and ferroelectric order in multiferroic materials.

188 familiar dipolar terms responsible for (anti)ferroelectric order.

189 years, tremendous progress has been made in ferroelectric oxide thin film technology-a field which i

190 hysical properties of prototypical ABO3 bulk ferroelectric oxides.

191 NCs) as plasmonic nanostructures to induce a ferroelectric-paraelectric phase transition in a poly(vi

192 erroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O3 substrate intimately couple

193 By switching the polarization field of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate, nonvolatile resist

194 nsisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, w

195 Recently, ferroelectric perovskite oxides have drawn much attentio

196 Ferroelectric perovskite oxides such as BaTiO3 and PbTiO

197 ransition from the paraelectric phase to the ferroelectric phase at this temperature, which causes th

198 ing rapidly as one transitions away from the ferroelectric phase transition (TC).

199 The compound experiences a ferroelectric phase transition ascribed to the 6s(2) lon

200 an incipient ferroelectric with an expected ferroelectric phase transition extrapolated to lie at 6

201 tion of the soft modes underlying successive ferroelectric phase transitions.

202 ween two variants of the stable low-symmetry ferroelectric phase.

203 f this reversible transformation between two ferroelectric phases and advance towards the development

204 s interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude

205 room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hi

206 in and polar lattice modes can stabilize new ferroelectric phases from nonpolar dielectrics or enhanc

207 in, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the pol

208 However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is

209 etimes may make this system interesting as a ferroelectric photovoltaic.

210 Ferroelectric polarization and domains should then evolv

211 to investigate the influence of vacancies on ferroelectric polarization and polarization switching in

212 r practical applications, simultaneous large ferroelectric polarization and strong magnetoelectric co

213 Vacancies play a pivotal role in affecting ferroelectric polarization and switching properties, and

214 eneral formulae Cu1-xIn1+x/3P2S6, have shown ferroelectric polarization behavior with a T c above the

215 rlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented

216 orce microscopy, we studied the evolution of ferroelectric polarization in response to external and b

217 tion and hole transportation on the basis of ferroelectric polarization in TiO2 -SrTiO3 core-shell na

218 The magnetic control of ferroelectric polarization is currently a central topic

219 Fe(3+) -O-Co(3+) bonds, while the suppressed ferroelectric polarization is due to the enhanced leakag

220 ble nature of the single-domain out-of-plane ferroelectric polarization of BaTiO3 is confirmed using

221 ered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90 degrees within

222 uch as the magnetic-field-driven reversal of ferroelectric polarization with no change of spin-helici

223 ar single crystals has been shown to exhibit ferroelectric polarization, demonstration of stimuli-res

224 apacitance depends on the orientation of the ferroelectric polarization.

225 two classes of shift current photovoltaics, ferroelectric polymer films and single-layer orthorhombi

226 Up until now, however, only ferroelectric polymers have intrinsically met this flexi

227 present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based c

228 ory of quantum criticality for such uniaxial ferroelectrics predicts that the temperature dependence

229 report the structure evolution, magnetic and ferroelectric properties in Co-doped 4- and 3-layered in

230 Precise control of ferroelectric properties through composition, size and c

231 aterials, which exhibit coupled magnetic and ferroelectric properties, have attracted tremendous rese

232 age and deposition time on the structure and ferroelectric property of the P(VDF-TrFE) films was stud

233 ion hysteresis loop clearly demonstrates the ferroelectric property.

234 e allows us to generate patterned domains of ferroelectric PVDF within just a few seconds.

235 d perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates.

236 However, ferroelectric reliability issues, such as imprint, reten

237 In this study, everlasting ferroelectric retention in the heteroepitaxially constra

238 field simulations, the key to the success of ferroelectric retention is to prevent the crystal from f

239 ng a new approach to overcome the failure of ferroelectric retention.

240 Research on nanoscale ferroelectrics reveals that their behaviour is profoundl

241 re-dependent dielectric anomalies as well as ferroelectric reversible spontaneous polarization.

242 l PbZr0.2 Ti0.8 O3 /SrTiO3 /PbZr0.2 Ti0.8 O3 ferroelectric sandwich structures due to the interplay b

243 dynamics; whereas Smax in relaxor and normal ferroelectrics scales as Smax V cr(-0.37), which talli

244 0.95Zr0.05TiO3, Pb0.8Ba0.2ZrO3 and polymeric ferroelectrics scales proportionally with V cr(-2.2), ow

245 universal property of topological defects in ferroelectric semiconductors.

246 te recognition events into dielectric and/or ferroelectric signals.

247 phase modulation of THz beam by operating a ferroelectric single crystal LiNbO3 film device at the p

248 Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric single crystal.

249 ary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric single crystals have potential application

250 Relaxor ferroelectric single crystals have triggered revolution

251 )-oriented domain-engineered ternary relaxor ferroelectric single crystals with extended temperature

252 Sr3 Sn2 O7 is the first room-temperature ferroelectric Sn insulator with switchable electric pola

253 e has not been experimentally verified to be ferroelectric so far.

254 ttering analyses to an important non-relaxor ferroelectric solid solution exhibiting the so-called co

255 ery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakt

256 A key signature of relaxor-ferroelectric solid solutions is the existence of polar

257 The electric susceptibility of the incipient ferroelectric SrFe12O19, which is slightly further from

258 its intrinsically high charge mobility, the ferroelectric SrTiO3 thin shell significantly improves t

259 ferrimagnetic LuFe2O4 into a simultaneously ferroelectric state, while also reducing the LuFe2O4 spi

260 tization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PM

261 ss of polar topologies possible in ultrathin ferroelectric structures and bring forward the prospect

262 itation of acoustic eigenmodes in multilayer ferroelectric structures is considered, and the principl

263 pendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward

264 attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption

265 ibly coming from the existence of a thin non-ferroelectric surface layer.

266 Ferroelectric susceptibilities are, in general, strongly

267 work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titan

268 mplexity of ferroelectric materials, typical ferroelectric switching is largely governed by a simple,

269 Here we report ferroelectric switching of ferromagnetic resonance in mu

270 The ferroelectric switching of magnetic anisotropy exhibits

271 we develop an approach for rapid probing of ferroelectric switching using direct strain detection of

272 orts utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric doma

273 currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into

274 In epitaxially strained ferroelectric thin films and superlattices, the ferroele

275 asable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive

276 Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and

277 strated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory per

278 size effect of 180 degrees stripe domains in ferroelectric thin films, there have been numerous repor

279 devices, opening new avenues for engineering ferroelectric thin-film devices.

280 use the effective electric permittivity of a ferroelectric to become negative, enabling it to behave

281 roelectric thin films and superlattices, the ferroelectric transition temperature can lie above the g

282 The ferroelectric transition temperature T(c) of 1-UC SnTe f

283 Here we report on synapses based on ferroelectric tunnel junctions and show that STDP can be

284 e show that in unpoled Co/PbTiO3/(La,Sr)MnO3 ferroelectric tunnel junctions, the polarization in acti

285 ovskite has been found, theoretically, to be ferroelectric under epitaxial strain becoming a promisin

286 We demonstrate the synthesis of metallic, ferroelectric, upconversion, semiconducting, and thermoe

287 nnihilation centres of pairs of two types of ferroelectric walls (and also Z3-vortex pairs) in 90 deg

288 Charged polar interfaces such as charged ferroelectric walls or heterostructured interfaces of Zn

289 Charged ferroelectric walls, which are energetically unfavourabl

290 igin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a

291 a possibility if MAPbI3 is a semiconducting ferroelectric, which, however, requires clear experiment

292 ur is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with p

293 Different from a typical ferroelectric whose electric polarization is easily satu

294 ly, we find that the layered oxides are also ferroelectric with a spontaneous polarization approachin

295 It is an incipient ferroelectric with an expected ferroelectric phase trans

296 Starting with hexagonal LuFeO3-the geometric ferroelectric with the greatest known planar rumpling-we

297 001) films of layered A3B2O7 hybrid-improper ferroelectrics with experimentally accessible biaxial st

298 requirement, leaving small-molecule organic ferroelectrics with room for improvement.

299 e external stimuli for domain engineering in ferroelectrics with significant current leakage.

300 z - 2)/z, where the dynamical exponent for a ferroelectric z = 1 and the dimension is increased by 1