ライフサイエンスコーパス: ferromagnetic

1 d crystal phase that is also macroscopically ferromagnetic.

2 lets as the nanoreactors, which are strongly ferromagnetic.

3 even though the bulk ground state of LSMO is ferromagnetic, a large lattice constant together with an

4 remain limited by antiferromagnetic or weak ferromagnetic alignments, by a lack of coupling between

5 ffect, a magnetic interaction that couples a ferromagnetic and an antiferromagnetic material, resulti

6 ts both the combination of pairwise Mn(III)2 ferromagnetic and antiferromagnetic exchange interaction

7 surate magnetic domains, can be described by ferromagnetic and ferroelectric domains only.

8 Coupled ferromagnetic and ferroelectric materials, known as mult

9 ction (IDMI) occurs at the interface between ferromagnetic and heavy metal layers with strong spin-or

10 ntrol of the transition temperature (between ferromagnetic and paramagnetic states) using very small

11 MENs and control ferromagnetic and polymer nanoparticles conjugated with

12 s study presents an opportunity to integrate ferromagnetic and semiconducting properties through the

13 vided insight into the magnetic structure of ferromagnetic and spin-canted antiferromagnetic ordered

14 Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors

15 We observe ferromagnetic and unpolarized phases, which are stabiliz

16 magnetic phases, such as ferromagnetic, anti-ferromagnetic, and frustrated spin configurations on a l

17 spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heu

18 We realize various magnetic phases, such as ferromagnetic, anti-ferromagnetic, and frustrated spin c

19 ions, we find that the Kitaev interaction is ferromagnetic, as in 5d(5) iridium honeycomb oxides, and

20 uggests that the iron containing samples are ferromagnetic at 5 K and paramagnetic at 300 K.

21 overcome the Stoner criterion and make them ferromagnetic at room temperature.

22 nels into the vacuum, when compared with the ferromagnetic background, is modified by the site-depend

23 In 3D-MTC, ferromagnetic beads are bound to the cell surface via su

24 urrently accessible in ultrathin heavy metal/ferromagnetic bilayers and multilayers with a strong Dzy

25 ur findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineeri

26 electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of hig

27 The Stoner criterion explains why iron is ferromagnetic but manganese, for example, is not, even t

28 ich avoids the fine-tuning problem, namely a ferromagnetic chain deposited on the surface of a spin-o

29 combined with wide half-metallic gap, unique ferromagnetic character and high Curie temperature has b

30 The spin on a ferromagnetic Co surface can interact with the asymmetri

31 Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall

32 have studied the magnetization dynamics of a ferromagnetic cobalt/palladium multilayer capped by an I

33 d a very small fraction of active (spinning) ferromagnetic colloids.

34 ted antiferromagnet below 15.9 K with a weak ferromagnetic component attributable to Dzyaloshinskii-M

35 but a canted antiferromagnetic order with a ferromagnetic component for T < 304 K.

36 e, which can be electrically measured with a ferromagnetic contact along the current path.

37 ected by a lateral spin-valve structure with ferromagnetic contacts.

38 amics is expected to be much faster than its ferromagnetic counterpart.

39 From the experiments, we confirm a ferromagnetic coupling between Fe and Gd across a 3 mono

40 [((R)DDB)Fe(NO)2((*)NO)](+) results from the ferromagnetic coupling between two strictly orthogonal o

41 red spins become disordered by quenching the ferromagnetic coupling constant.

42 We demonstrate that it is possible to find ferromagnetic coupling for many of them and in particula

43 only elements able to produce a significant ferromagnetic coupling for thicker spacer layers.

44 , an orthorhombic-like structure, and strong ferromagnetic coupling.

45 ement with respect to previously studied all-ferromagnetic crosses, as they also reduce the pinning p

46 ing of a square array of micrometer-sized Py ferromagnetic disks covered by a superconducting Nb thin

47 ong one-dimensional chains by propagation of ferromagnetic domain walls through Y-shaped vertices.

48 of cracks, fluid fronts in porous media, and ferromagnetic domain walls.

49 Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscop

50 Incorporating ferromagnetic dopants into three-dimensional topological

51 udied the magnetic excitations in non-planar ferromagnetic dots using a broadband microwave spectrosc

52 action, which leads to a competition between ferromagnetic double-exchange and antiferromagnetic supe

53 of antiferromagnetic domain walls (DWs) than ferromagnetic DWs.

54 flipping the magnetization direction of the ferromagnetic electrode.

55 zation completely in out-of-plane magnetized ferromagnetic elements, but the switching is determinist

56 gineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong s

57 Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon i

58 e interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel fie

59 rfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate.

60 cooling results from the role of long-range ferromagnetic exchange correlations that become importan

61 mixed-valence complex, stemming from strong ferromagnetic exchange coupling that is best described c

62 lay of the surface states, band-bending, and ferromagnetic exchange energy.

63 Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal sy

64 ghbor antiferromagnetic and nearest-neighbor ferromagnetic exchange interactions can induce rich magn

65 play interesting magnetic phenomena, such as ferromagnetic exchange interactions, large ground state

66 Here we study the multiferroic domains in ferromagnetic ferroelectric Mn2GeO4 using neutron diffra

67 boundaries in multiferroics, in which (anti-)ferromagnetic, ferroelectric and ferroelastic order para

68 However, one remaining issue of ferromagnetic/ferroelectric magnetoelectric bilayer comp

69 ministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/P

70 Among such ferromagnetic ferroelectrics are conical spin spiral mag

71 terplay over a millimetre range along a thin ferromagnetic film as well as unintended side effects wh

72 proach requires neither inhomogeneity of the ferromagnetic film nor nonuniformity of the biasing magn

73 ample of vortex-antivortex pairs in a planar ferromagnetic film.

74 pin wave beams in thin homogeneous nanosized ferromagnetic films by microwave current.

75 tical analysis reveals the presence of large ferromagnetic first-neighbor Kitaev interactions, while

76 h results in four stable magnetic states: +/-ferromagnetic (FM) and +/-antiferromagnetic (A-FM).

77 the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit

78 at the boundary does not change the overall ferromagnetic (FM) coupling between the grains.

79 a: see text]1.5 GPa, and the other is from a ferromagnetic (FM) metal to an antiferromagnetic (AFM) i

80 ctrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of man

81 se transition from antiferromagnetic (AF) to ferromagnetic (FM) ordering.

82 ansition from an antiferromagnetic (AF) to a ferromagnetic (FM) phase between 75-105 degrees C.

83 synergic influence of superconductor (SC) - ferromagnetic (FM) stray fields, in both the superconduc

84 within the equivalent conical surface in the ferromagnetic (FM) temperature range.

85 anced through the structural optimization of ferromagnetic (FM)/semiconductor composite nanostructure

86 zation have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(F

87 uss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as

88 Hybrid normal metal/ferromagnetic, gold/permalloy (Au/Py), nanojunctions are

89 Here, we report the first example of ferromagnetic graphene achieved by controlled doping wit

90 ience a weak superexchange that stabilizes a ferromagnetic ground state as observed around 2 K.

91 s ratio grows greater than 1, resulting in a ferromagnetic ground state at filling factor nu = 2.

92 Furthermore, the new ferromagnetic ground state of Dirac electrons resulting

93 red, non-magnetic, ground state to a splayed ferromagnetic ground state.

94 itrogen contributed much less to the overall ferromagnetic ground state.

95 magnetic topological semimetal states in the ferromagnetic half-metal compounds Co2TiX (X = Si, Ge, o

96 ting in a unidirectional displacement of the ferromagnetic hysteresis loop by an amount called the 'e

97 e spin- and valley-degenerate system against ferromagnetic instability and Wigner crystalization, whi

98 y enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator

99 zations induced at the interface between the ferromagnetic insulator (FMI) EuS and the three-dimensio

100 sputtered on epitaxial Y(3)Fe(5)O(12) (YIG) ferromagnetic insulator films.

101 ists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetica

102 omprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with

103 es of the three phases-HSrCoO2.5 is a weakly ferromagnetic insulator, SrCoO3-delta is a ferromagnetic

104 urements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been perf

105 . Nb, Al) and either strongly spin-polarized ferromagnetic insulators (e.g. EuO, GdN) or halfmetallic

106 overed phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion.

107 both radicals 1S and 1O with one-dimensional ferromagnetic interaction in the former (2J=14.4 cm(-1)

108 erature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins a

109 ward a new generation of antiferromagnetic - ferromagnetic interactions for spintronics.

110 he of Cr(3+) moments and suggest short-range ferromagnetic interactions.

111 s and/or octahedral rotations, ferroelectric-ferromagnetic interfaces are affected by symmetry mismat

112 g to d >/= 4 and d < 4 for the d-dimensional ferromagnetic Ising model respectively.

113 r magnetic energy transduction that utilizes ferromagnetic islands (FIs) on the surface of a 3D time-

114 lectronic phase separation in which metallic ferromagnetic islands nucleate in an insulating antiferr

115 A ferromagnetic Kitaev coupling is also supported by a det

116 rbital two-channel Kondo effect in epitaxial ferromagnetic L1(0)-MnAl films, as evidenced by a magnet

117 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field pulse seq

118 cate a multiferroic tunnel junction based on ferromagnetic La0.7Sr0.3MnO3 electrodes separated by an

119 High-quality superlattices comprising ferromagnetic La2/3Sr1/3MnO3 (LSMO) and paramagnetic SrI

120 By varying the ferromagnetic layer composition, we can tailor the magne

121 cale, the magnetic anisotropy landscape of a ferromagnetic layer exchange-coupled to an antiferromagn

122 e Rh-terminated surface stabilizes a surface ferromagnetic layer involving five planes of Fe and Rh a

123 ices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages.

124 t flowing through the heavy metal instead of ferromagnetic layer realizes the "end to end" circulatio

125 t with transverse spin polarization into the ferromagnetic layer via the spin Hall effect.

126 sembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotro

127 it superiorly large exchange coupling with a ferromagnetic layer.

128 spin-orbit interactions and transition-metal ferromagnetic layers provide a large and tunable DMI.

129 arising from direct contact between the two ferromagnetic layers.

130 temperature-dependent interaction among the ferromagnetic-like cluster glasses and antiferromagnetic

131 endent magnetization M measurements reveal a ferromagnetic-like onset at 228 (1) K and a broad maximu

132 Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying

133 und that quark nuggets could well exist as a ferromagnetic liquid with a 10(12)-T magnetic field.

134 Superparamagnetic particles or ferromagnetic liquids are added to the droplets to provi

135 Since the magnetic field needed to flip the ferromagnetic magnetization within femtosecond timescale

136 Recently, ferromagnetic material is demonstrated in AOS under mult

137 pond and be aligned to magnetic field like a ferromagnetic material.

138 owave fields on specimens, such as observing ferromagnetic materials at resonance.

139 l model may provide a guide to find suitable ferromagnetic materials for AOS.

140 The Gilbert damping of ferromagnetic materials is arguably the most important b

141 ssible to alter the electronic states of non-ferromagnetic materials, such as diamagnetic copper and

142 In soft ferromagnetic materials, the smoothly varying magnetizat

143 omain walls have been intensively studied in ferromagnetic materials, where they nucleate at the boun

144 oth information storage and processing using ferromagnetic materials.

145 rely on the bistability of ordered spins in ferromagnetic materials.

146 ch in controlling the magnetic properties of ferromagnetic materials.

147 that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry

148 (AFM-I) and the perovskite SrCoO3 that is a ferromagnetic metal (FM-M), owing to their multiple vale

149 switches the magnetization in a neighbouring ferromagnetic metal film.

150 y ferromagnetic insulator, SrCoO3-delta is a ferromagnetic metal, and SrCoO2.5 is an antiferromagneti

151 Electric field effects in ferromagnetic metal/dielectric structures provide a new

152 and optimization of electric field effect at ferromagnetic metal/insulator interfaces.

153 fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barrier

154 s established by investigating a heavy-metal/ferromagnetic-metal device (Ta/CoFeB/MgO).

155 at is approximately 100 K higher because the ferromagnetic metallic phase is more dominant at all tem

156 Distinct appearance of ferromagnetic metallic phase is observed along the edge

157 on (MIT) that may result from coexistence of ferromagnetic, metallic and insulating phases.

158 ore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect

159 rvations of switching of magnetic domains in ferromagnetic metals by circularly polarized light, so-c

160 r injection into organic semiconductors from ferromagnetic metals by using various interface engineer

161 nce CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is

162 s that include only interband transitions in ferromagnetic metals.

163 transition at 24 K that is due to competing ferromagnetic (Mn(2+) -Mn(3+) ) and antiferromagnetic (M

164 stabilization and switchability of the weak ferromagnetic moments under applied epitaxial strain usi

165 The induced ferromagnetic momentum couples with conduction electrons

166 A rare-earth (RE)/transition metal (TM) ferromagnetic multilayer is a classic example where the

167 ting film, patterned with antidots, and with ferromagnetic nano-rods grown inside them.

168 ids are familiar as colloidal suspensions of ferromagnetic nanoparticles in aqueous or organic solven

169 lectivity effect is used along with 30-50 nm ferromagnetic nanoplatelets in order to realize a simple

170 age to a nanosized VCMA gate in an ultrathin ferromagnetic nanowire results in the parametric excitat

171 Domain walls in ferromagnetic nanowires are potential building-blocks of

172 induced stochastic switching effects in soft ferromagnetic nanowires is a critical challenge for real

173 ite and manipulate magnetic charge states in ferromagnetic nanowires.

174 ms of stochastic domain wall pinning in soft ferromagnetic nanowires.

175 on spin resonance measurement elucidates the ferromagnetic nature of ZnCoO by the formation of Co-H-C

176 hich we compare with experiments on flexible ferromagnetic nickel rods at the centimeter scale.

177 ultiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52T

178 erstanding spin transport characteristics in ferromagnetic/nonmagnetic systems and its potential appl

179 In spintronic devices consisting of ferromagnetic/nonmagnetic systems, the ferromagnet-induc

180 se diagram, superconductivity sets in from a ferromagnetic normal state.

181 tion is one and a half times larger than the ferromagnetic one, a magnetic phase composed of canting

182 se at room temperature to a high temperature ferromagnetic one.

183 etic and carbon atoms, which leads to either ferromagnetic or antiferromagnetic behavior.

184 the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of

185 This material exhibits a ferromagnetic order for 304 K < T < 565 K, but a canted

186 Neel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi,Sb)2Te3, we realize

187 Here we report intrinsic long-range ferromagnetic order in pristine Cr2Ge2Te6 atomic layers,

188 The realization of long-range ferromagnetic order in two-dimensional van der Waals cry

189 , and not the phase of ZrO2 that control the ferromagnetic order in undoped ZrO2 nanostructures.

190 Introducing ferromagnetic order into a topological insulator system

191 The obtained results observed that the ferromagnetic order is the most stable ground state and

192 calculation shows that both sheets favor the ferromagnetic order with a substantial collective charac

193 n doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K an

194 native explanation - competition of HTS with ferromagnetic order, fluctuating in superconducting samp

195 S with overdoping is not caused by competing ferromagnetic order.

196 s of Pr, Nd, and Sm do not contribute to the ferromagnetic order.

197 als contained simultaneous ferroelectric and ferromagnetic ordering have been realized.

198 The ordered magnetic arrangement (ferromagnetic ordering in the ab plane and antiferromagn

199 All compounds show ferromagnetic ordering in the range of 39-52 K attribute

200 even 10% of Eu or La into the Ca site causes ferromagnetic ordering of Co moments.

201 olid [(+)-NDI-Delta(3(-*))(CoCp2(+))3] shows ferromagnetic ordering with a Curie temperature TC = 20

202 the microstructure which disrupt long-range ferromagnetic ordering, resulting in an additional magne

203 avalent Nb with unpaired electrons, yielding ferromagnetic ordering.

204 l direction, with both antiferromagnetic and ferromagnetic orders.

205 ls or more, the LaMnO3 film abruptly becomes ferromagnetic over its entire area, which is visualized

206 coupling of its antiferromagnetic order to a ferromagnetic overlayer.

207 demonstrate theoretically that by placing a ferromagnetic particle between a nitrogen-vacancy magnet

208 urify trypsin based on affinity binding with ferromagnetic particles of azocasein composite (mAzo).

209 e devices are based on a pair of interacting ferromagnetic particles of different size and different

210 Here we show that small ferromagnetic particles with a strong temperature-depend

211 and Au to nonconventional substrates such as ferromagnetic Permalloy.

212 Metamagnetism occuring inside a ferromagnetic phase is peculiar.

213 ch is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films.

214 The sp(2) carbon framework induces ferromagnetic phase transition to develop spin-spin cohe

215 Here we show that a canted ferromagnetic phase which is preceded by local point sym

216 e magnetic order in the entire volume in the ferromagnetic phase.

217 gnetoelectric (ME) antennas with a suspended ferromagnetic/piezoelectric thin-film heterostructure.

218 secondary structure-induced stabilization of ferromagnetic polyradicals with robust magnetic properti

219 The unique temperature-dependent ferromagnetic properties of the Si-terminated surface in

220 targeted sorption and collection due to its ferromagnetic properties.

221 netic systems under pressure have shown that ferromagnetic quantum criticality is avoided either by a

222 ice drives condensates across an effectively ferromagnetic quantum phase transition.

223 on of antiferromagnetic coupling between the ferromagnetic region and the pinned layer.

224 with a pathway to "hide" or "reveal" a given ferromagnetic region at zero magnetic field.

225 sis of the critical properties in the forced ferromagnetic region yields 3D Heisenberg exponents beta

226 ferromagnetically reduced layer and the bulk ferromagnetic region.

227 py analysis indicate that the coexistence of ferromagnetic regions, superparamagnetic clusters, and n

228 s are characterized by a hysteresis loop and ferromagnetic reso-nance with pumping frequencies from 1

229 , is determined using SQUID magnetometry and ferromagnetic resonance (FMR), displaying an unexpected

230 in Pt by reproducing published experimental ferromagnetic resonance data in the bilayer geometry.

231 refore, by applying the model to analyze the ferromagnetic resonance data, the distribution of orient

232 Non-volatile modification of ferromagnetic resonance field is demonstrated by applyin

233 Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consist

234 Ferromagnetic resonance measurements confirm that the in

235 Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial

236 CoFe/BiFeO3 through electric field-dependent ferromagnetic resonance spectroscopy and nanoscale spati

237 Here, we use ferromagnetic resonance spectroscopy to measure the magn

238 We used ferromagnetic resonance spectroscopy to quantitatively d

239 Using x-ray scattering and ferromagnetic resonance techniques, we provide unambiguo

240 gnificant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three

241 al can be controlled by driving the system's ferromagnetic resonance.

242 oy (Py) thin films of varying thicknesses by ferromagnetic resonance.

243 ng sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively

244 The magnetic properties and ferromagnetic resonant frequencies were experimentally c

245 tric hysteresis but none have shown a strong ferromagnetic response in either bulk or thin film witho

246 chieved through spin injection via a diluted ferromagnetic semiconductor and measured through the hel

247 Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing

248 r fundamentally understanding the high Tc in ferromagnetic semiconductor nanostructure and realizing

249 hts into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the

250 ounterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands.

251 arrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great o

252 of Eu-cyclooctatetraene (EuCot), a predicted ferromagnetic semiconductor.

253 inertial displacement of a domain wall in a ferromagnetic semiconductor.

254 art-Derrick theorem, like in two-dimensional ferromagnetic solitons, dubbed 'baby skyrmions'.

255 quantum electrodynamics system with a small ferromagnetic sphere in a microwave cavity and engineer

256 engenders up to a 90% increase in potential ferromagnetic spin alignments in the central layer and t

257 ctive behaviors in chemical kinetics, (anti-)ferromagnetic spin models in statistical mechanics and o

258 , N-doped graphene exhibited transition to a ferromagnetic state at approximately 69 K and displayed

259 ical insulators such as Bi2Te3, a long-range ferromagnetic state can be established by chemical dopin

260 The emergent ferromagnetic state exists over several layers of the me

261 down/up and periphery pointing up/down, and ferromagnetic states with magnetization pointing up/down

262 versibly between two skyrmion states and two ferromagnetic states, i.e. skyrmion states with the magn

263 ic structure in the ground state, via a pure ferromagnetic structure under the intermediate pressure,

264 induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spin

265 ure magnetic susceptibility data reveal weak ferromagnetic superexchange coupling between the two S =

266 c performance of a prototype (3.6 mm) of the ferromagnetic swimmer in fluids of different viscosity a

267 al verification of a new class of autonomous ferromagnetic swimming devices, actuated and controlled

268 y of the dissipative structure of the driven ferromagnetic system.

269 the microrods also highlights the fact that ferromagnetic systems break the symmetry before the buck

270 An essential difference with analogous ferromagnetic systems is that flocks are active: animals

271 and theoretical investigations on itinerant ferromagnetic systems under pressure have shown that fer

272 s a promising multiferroic material but it's ferromagnetic TC is well below room temperature and the

273 systems; (b) standardization in reporting of ferromagnetic testing results for implants and devices;

274 een to make such suspensions macroscopically ferromagnetic, that is having uniform magnetic alignment

275 stimulate magnetization oscillations of the ferromagnetic thin film, which results in the radiation

276 n Seebeck effect (SSE) measured for metallic ferromagnetic thin films in commonly used longitudinal c

277 ible control of nanomagnetism in solid-state ferromagnetic thin films is achieved by controlling the

278 reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTi

279 re we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adso

280 Using a non-ferromagnetic thirty-five key keyboard, the pianists imp

281 an avalanche-like abrupt transition from the ferromagnetic to the antiferromagnetic phase, while the

282 , where the gate voltage reversibly drives a ferromagnetic-to-paramagnetic phase transition.

283 y of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)2-x V x Te3.

284 When a three-dimensional ferromagnetic topological insulator thin film is magneti

285 e report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in

286 del suggests that a nearby superparamagnetic-ferromagnetic transition can be gate tuned, holding pote

287 wn that the approach to a continuous quantum ferromagnetic transition is typically interrupted by eit

288 While a ferromagnetic transition occurs around 700 K, it does so

289 Spin polarization emerges below the ferromagnetic transition temperature of the EuTiO3 layer

290 o be close to the Cr concentration where the ferromagnetic transition temperature, Tc, goes to 0.

291 0.56) show a sharp downturn right below the ferromagnetic transition temperature.

292 Quantum Hall ferromagnetic transitions are typically achieved by incr

293 ature is a hallmark of soft, two-dimensional ferromagnetic van der Waals crystals.

294 Here, we show that the ferromagnetic vortex can be driven into proximity with a

295 The core of a ferromagnetic vortex domain creates a strong, localized

296 ally separated ground states with manifestly ferromagnetic wave functions.

297 he magnetizations of the R and Fe ions' weak ferromagnetic (WFM) components are parallel or antiparal

298 ZVI and NZVI are ferromagnetic, which can induce heat under applied AC EM

299 the position of a magnetic domain wall in a ferromagnetic wire.

300 ich is comparable to conventional insulating ferromagnetic YIG films.