ライフサイエンスコーパス: ferromagnetism

1 half-metallic, resulting in high-temperature ferromagnetism.

2 anence and routability of voltage-controlled ferromagnetism.

3 ondition for the observed itinerant electron ferromagnetism.

4 e chalcopyrites with excellent prospects for ferromagnetism.

5 ransforms the metastable phase and kills the ferromagnetism.

6 s that have previously been found to support ferromagnetism.

7 l help improve our understanding of metallic ferromagnetism.

8 sm at room temperature, confirming intrinsic ferromagnetism.

9 nce, the occurrence of two-dimensional Ising ferromagnetism.

10 result of charge transfer driven interfacial ferromagnetism.

11 possible mechanism for the origin of excited ferromagnetism.

12 q respectively), and showed room temperature ferromagnetism.

13 s, such as surface asperities for spines, or ferromagnetism.

14 the origin of the observed room temperature ferromagnetism.

15 cing the integration of ferroelectricity and ferromagnetism.

16 lation between the defects and the resulting ferromagnetism.

17 actions drives the stabilization of the weak ferromagnetism.

18 ies on the intrinsic spin-orbit coupling and ferromagnetism.

19 s an element-specific probe of the origin of ferromagnetism.

20 i.e., a coexistence of ferroelectricity and ferromagnetism.

21 extent of hydrogenation, as well as exhibit ferromagnetism.

22 The recent discovery of ferromagnetism above room temperature in low-temperature

23 Its strong ferromagnetism above the room temperature enables the na

24 Trends in ferromagnetism across the 3d series of TM(2+):ZnO DMSs p

25 th high Curie temperature (Tc), controllable ferromagnetism and easy integration with current Si tech

26 Ferromagnetism and its evolution in the orthorhombic per

27 emonstrated, which exhibits room temperature ferromagnetism and magnetoelectric (ME) coupling.

28 the effective electric-field control of both ferromagnetism and magnetoresistance in unique MnxGe1-x

29 agnetic codoping improves the homogeneity of ferromagnetism and modulates the surface band structure.

30 present direct evidence of hydrogen-mediated ferromagnetism and spin polarization in the conduction b

31 eates new opportunities for field control of ferromagnetism and spin-based quantum information proces

32 es determination of the relationship between ferromagnetism and structural distortion.

33 owards understanding the competition between ferromagnetism and superconductivity in complex-oxide he

34 magnet, and find the probable cause for the ferromagnetism and weak magnetization hysteresis in Fe-d

35 The ferromagnetism appears in isolated patches whose density

36 d material parameters for the control of the ferromagnetism are investigated, and the mechanism relat

37 Superconductivity and ferromagnetism are two antagonistic phenomena that combi

38 Its weak ferromagnetism arises from the canting of the antiferrom

39 he nickel d-states, which generally leads to ferromagnetism as is the case in metallic Ni.

40 DMSQDs are shown to exhibit room-temperature ferromagnetism, as expected from theoretical arguments.

41 (1.85)Sr(0.15)CuO(4) thin films develop weak ferromagnetism associated to the charge transfer of spin

42 Charge-transfer ferromagnetism assumes no essential role of dopant as a

43 ed Mn oxide by pulsed laser deposition shows ferromagnetism at low Zn concentration for an optimum ox

44 wever, the ability to turn on and off robust ferromagnetism at room temperature and above has remaine

45 e extrinsic defects are eliminated, metallic ferromagnetism at room temperature can be stabilized in

46 Here we combine ferroelectricity and ferromagnetism at room temperature in a bulk perovskite

47 Polar corundum GaFeO3 exhibits weak ferromagnetism at room temperature that arises from its

48 e presence of the copper at Zn sites induces ferromagnetism at room temperature, confirming intrinsic

49 ultiferroic, exhibiting ferroelectricity and ferromagnetism at room temperature.

50 milar to that found in the 2D Ising model of ferromagnetism at the critical temperature.

51 ucidate the origins of the TM(n+):TiO(2) DMS ferromagnetism but also represent an advance toward the

52 simultaneously display ferroelectricity and ferromagnetism, but also enable magnetic moments to be i

53 rrelations persisted despite the presence of ferromagnetism, but the Kondo peak in the differential c

54 It presents a rare example of a system where ferromagnetism can be induced by controlling the vacanci

55 Ferromagnetism can occur in wide-band gap semiconductors

56 ching the percolation limit, charge-transfer ferromagnetism can switch to a double exchange mechanism

57 d TMDs toward half-metallic room-temperature ferromagnetism character.

58 al thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

59 These defects are passivated and the ferromagnetism destroyed by further aerobic annealing.

60 raphite oxide, however, pi electrons develop ferromagnetism due to the unique structure of the materi

61 Similar to HP-EuCo2As2, the itinerant 3d ferromagnetism emerges from electronic doping into the C

62 tomic scale and not so large as to eliminate ferromagnetism entirely.

63 Ferromagnetism exhibiting spontaneous spin alignment is

64 The ferromagnetism extends ~2 nm into the Bi2Se3 from the in

65 uctures have been discovered to show sizable ferromagnetism (FM) with the potential applications in s

66 Quenched ferromagnetism for N<4 superlattices is correlated to a

67 ractive interactions, and Stoner's itinerant ferromagnetism for repulsive interactions.

68 y between antagonistic superconductivity and ferromagnetism has been a interesting playground to expl

69 or these applications, but the origin of its ferromagnetism has been controversial for several decade

70 Room temperature ferromagnetism has been observed in the Cu doped ZnO fil

71 tic oxide, 6H-BaTiO3-delta, room-temperature ferromagnetism has been previously reported.

72 Electric-field manipulation of ferromagnetism has the potential for developing a new ge

73 Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature

74 a new method for the robust manipulation of ferromagnetism in (Ga,Mn)As.

75 are closely linked to the strongly modified ferromagnetism in (LaMnO3+delta)N/(SrTiO3)N superlattice

76 Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)

77 ferromagnetism with gate voltage, and detect ferromagnetism in a non-conducting p-type sample.

78 vation of superconductivity on the border of ferromagnetism in a pure system, UGe2, which is known to

79 Here we predict and rationalize robust ferromagnetism in an insulating oxide perovskite structu

80 Additionally, the weak ferromagnetism in BiFeO3 films is largely changed in R-T

81 ental support for the existence of intrinsic ferromagnetism in cobalt-doped TiO(2), these results dem

82 l valence-level energy range, indicates that ferromagnetism in Ga(1-x)Mn(x)As must be considered to a

83 l evidence of a new form of room-temperature ferromagnetism in high surface area nanocrystalline mang

84 The occurrence of ferromagnetism in Mn(2+):ZnO and its dependence on synth

85 Room-temperature ferromagnetism in Mn-doped chalcopyrites is a desire asp

86 The discovery of ferromagnetism in Mn-doped GaAs has ignited interest in

87 Antisite-stabilized spin-flipping induces ferromagnetism in MnPt films, although it is robustly an

88 e demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100

89 otations as routes to enhancing induced weak ferromagnetism in multiferroic oxides.

90 of the coexistence of superconductivity and ferromagnetism in one two-dimensional nanomaterial.

91 Enhancing ferromagnetism in semiconductors requires us to understa

92 ined by either of the two dominant models of ferromagnetism in semiconductors.

93 lps unveil the mechanism of carrier-mediated ferromagnetism in spintronic materials.

94 nation of relativistic fermion behaviour and ferromagnetism in Sr1-yMn1-zSb2 offers a rare opportunit

95 e unexpected evolution from high-temperature ferromagnetism in SrRuO3 to low-temperature superconduct

96 nfluence on ferroelectricity in bulk STO and ferromagnetism in STO-based heterostructures.

97 understanding of the microscopic origins of ferromagnetism in such materials.

98 le of internal strain in establishing defect ferromagnetism in systems with competing structural phas

99 nd magnetization studies have shown signs of ferromagnetism in the LaAlO3/SrTiO3 heterostructure, an

100 perconductivity adjoining itinerant-electron ferromagnetism in the phase diagram has for many years c

101 This result reveals not only that the ferromagnetism in the ruthenates is extremely sensitive

102 To explain the origin of ferromagnetism in these ZrO2 nanostructures, we hypothes

103 strates the existence of intrinsic high-T(C) ferromagnetism in this class of DMSs.

104 d thin-film studies, we demonstrate that the ferromagnetism in this system originates in a metastable

105 amous double exchange, the main mechanism of ferromagnetism in transition metal compounds.

106 se of surface molecular adsorption to induce ferromagnetism in two-dimensional superconducting NbSe2,

107 Discoveries of room-temperature ferromagnetism in wide-bandgap DMSs hold great promise,

108 oximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.

109 The observed ferromagnetism increases with decreasing constituent nan

110 f different oxidation states is the basis of ferromagnetism induced by Stoner splitting of the local

111 d our data validate the most basic model for ferromagnetism introduced by Stoner.

112 The transition from antiferromagentism to ferromagnetism is attributed to atomic-scale disorder in

113 The origin of the ferromagnetism is attributed to the trivalent Sm dopant,

114 re of the layered manganite, and the loss of ferromagnetism is attributed to weakened double exchange

115 Ferromagnetism is broadly accepted as an intrinsic prope

116 Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hystere

117 The most important factor for activating ferromagnetism is found to be the creation of grain boun

118 Homogeneity in ferromagnetism is found to be the key to high-temperatur

119 BiFeO3, we are able to show that a metallic ferromagnetism is induced near the interface.

120 n is substantially deficient at x = 0.26 and ferromagnetism is maintained with a T(c) of approximatel

121 Surprisingly, strong ferromagnetism is observed with T(c) = 223 K.

122 y, a rigorous theoretical basis for metallic ferromagnetism is still largely missing.

123 Thus, the ferromagnetism is traced down to its microscopic electro

124 Ferromagnetism is usually deemed incompatible with super

125 ly, the coexistence of superconductivity and ferromagnetism is usually observed only in elegantly des

126 exhibit robust high-Curie-temperature (T(C)) ferromagnetism (M(s)(300 K) = 0.8 mu(B)/Ni(2+), T(C) >>

127 So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy ha

128 This propensity for ferromagnetism may account for much of the unexplained b

129 ect, whereas in trilayer CrI3 the interlayer ferromagnetism observed in the bulk crystal is restored.

130 interaction, also at the origin of the weak ferromagnetism of bulk cuprates, propagates the magnetis

131 Our observations imply that itinerant ferromagnetism of delocalized fermions is possible witho

132 The strong ferromagnetism of Eu coexists with the pressure-induced

133 electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively m

134 ic structures and polarity-dependent high-TC ferromagnetism of TM(2+):ZnO DMSs, where TM(2+) denotes

135 ependence of magnetic interaction leading to ferromagnetism on the carrier density is shown.

136 g that it may be possible to switch the weak ferromagnetism "on" and "off" under the application of s

137 Sr(1-y)Ba(y)RuO3 makes it possible to study ferromagnetism over a broader phase diagram, which inclu

138 The ferromagnetism persists up to approximately 980 K, and f

139 This interfacial ferromagnetism persists up to room temperature, even tho

140 erature superconductivity, ferroelectricity, ferromagnetism, piezoelectricity and semiconductivity.

141 de-bandgap DMSs hold great promise, but this ferromagnetism remains poorly understood.

142 The suppression/recovery of interfacial ferromagnetism results from the asymmetric effect that i

143 in a limited pressure range on the border of ferromagnetism, seems to arise from the same electrons t

144 The emergence of interfacial ferromagnetism should have implications to electronic an

145 Furthermore, the samples (x = 0.1-0.7) with ferromagnetism show magnetoelectric coupling effects at

146 d, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately

147 emergent organized behavior (crystallinity, ferromagnetism, superconductivity, etc.) at long wavelen

148 sics, underpinning such diverse phenomena as ferromagnetism, superconductivity, superfluidity and the

149 harge density waves, superconductivity, hard ferromagnetism) that may be tuned by composition, pressu

150 patial control over electronic bandwidth and ferromagnetism through the creation of octahedral supers

151 etic properties: we show that the trend from ferromagnetism to incommensurate ordering as atomic numb

152 ition of permanent magnet nanoparticles from ferromagnetism to paramagnetism provides an effective ap

153 c transition of BaFe12O19 nanoparticles from ferromagnetism to paramagnetism.

154 the controlled manipulation of high-T(C) DMS ferromagnetism using external chemical perturbations.

155 te to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example.

156 c fingerprint of bulk metallic character and ferromagnetism versus depth.

157 No evidence of macroscopic ferromagnetism was found in SQUID magnetometry.

158 Robust ferromagnetism was observed in spin-coated thin films of

159 ontrary to previous reports, no evidence for ferromagnetism was observed.

160 tail behaviour, whereas for c/a < 0.99 clear ferromagnetism was observed.

161 In this work, reversible control of ferromagnetism was realized by the guided motion of Li-i

162 at orbital ordering may be the origin of the ferromagnetism we observe in this material.

163 etic as colloids but showed room-temperature ferromagnetism when spin-coated aerobically into films.

164 dicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynami

165 port an approach to control and switch local ferromagnetism with an electric field using multiferroic

166 ts reveal the possibility to locally control ferromagnetism with an electric field.

167 We observe no change in ferromagnetism with gate voltage, and detect ferromagnet

168 nhancement and suppression, respectively, of ferromagnetism with modulation of the Curie temperature

169 Ferromagnetism with T(C) > 350 K is observed in aggregat

170 nce of high n-type electrical conduction and ferromagnetism with Tc approximately 450 K.

171 d structure, the compound exhibits itinerant ferromagnetism, with the ordering temperature of 307 K.

172 sites represent the first instance of strong ferromagnetism within a Kagome layered framework.