ライフサイエンスコーパス: field effect

1 1% of cells were dually infected, this was a field effect.

2 The only explanation left is an electrical field effect.

3 scopy, clearly demonstrating a ferroelectric field effect.

4 tically accounting for the external magnetic field effect.

5 the large modulation achievable via the gate field-effect.

6 lectrostatic interlayer screening and fringe field effects.

7 Simulation results show that field effects alone can indeed mediate propagation acros

8 disease from urothelial progenitor cells via field effects along papillary/luminal and nonpapillary/b

9 NCs that can be attributed to few-atom local field effects and to local field-induced microscopic cas

10 er semiconductors can simultaneously exhibit field-effect and electrochemical operation regimes, with

11 temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transis

12 This innovative combination of both field-effect and nanoplasmonic sensing makes the detecti

13 s for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces

14 n avoid the generally applied approach for a field-effect based detection of enzyme reactions via det

15 A programmable field effect-based electrolyte-insulator-semiconductor (

16 Field Effect Biosensing (FEB) with monoclonal antibodies

17 The dose-response behavior of the field-effect biosensor presents a linear range between 1

18 report the sensing of aflatoxin B1(AFB1) by field effect capacitive method using electrophoretically

19 Thus the RGO based field effect capacitive sensor provides a combined advan

20 Here we report a true ferroelectric field effect-carrier density modulation in an underlying

21 ally resonant nanostructures to enhance near-field effects controlling far-field scattering through i

22 a working concept of a double layer graphene field effect device that utilizes a thin film of sputter

23 orm for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the

24 o control the conductivity of graphene based field effect devices.

25 ook on the realization of tailored TMD-based field-effect devices through surface and interface chemi

26 High mobility graphene field-effect devices, fabricated on the complex-oxide he

27 Field-effect experiments on cuprates using ionic liquids

28 This field-effect gating enables the fabrication of a wide ra

29 amplify the effect of quantum capacitance in field-effect gating.

30 olymers, PhF2,6 achieved the highest average field-effect hole mobility (5.1 cm(2) V(-1) s(-1)).

31 ize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor

32 Electric field effects in ferromagnetic metal/dielectric structur

33 PC diagnosis through detection of epigenetic field effects in histologically non-malignant prostate t

34 investigated if cancer-associated epigenetic field effects in histologically normal prostate tissue m

35 lity and electron charge density, similar to field-effect induced changes measured in electrical Hall

36 We manipulate the LDOS via field effect-induced optical permittivity modulation of

37 The molecular mechanisms initiating field effects involve a new class of genes referred to a

38 In addition, the electric field effect is found to change sign in the Walker regim

39 Strong magnetic-field effects (MFE) were observed for two triads with a

40 By introducing Al2 O3 capping, carrier field effect mobilities (41 for holes and 80 cm(2) V(-1)

41 lectrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm(2) V(-1) s(-1) f

42 on of polymer aggregates leading to enhanced field-effect mobilities of 1.6 cm(2)/(V s).

43 field-effect transistors show extremely high field-effect mobilities up to 9.71 cm(2) V(-1) s(-1) .

44 Field effect mobility in an organic device is determined

45 red and highly conductive GD films exhibited field-effect mobility as high as 100 cm(2) V(-1) s(-1).

46 ld-effect transistors on textile, reaching a field-effect mobility of 91 cm(2) V(-1) s(-1), at low v

47 harge transport behavior, giving a p-channel field-effect mobility of 0.42 cm(2) V(-1) s(-1) and an o

48 The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm(2) V(-1) s(-1)

49 arge carrier conduction with a high electron field-effect mobility of approximately 158 cm(2) V(-1) s

50 The field-effect mobility of damaged devices can be almost f

51 ult, our polymer is able to recover its high field-effect mobility performance (more than 1 square ce

52 The field-effect mobility remained as high as 1.12 square ce

53 d organic field-effect transistor shows high field-effect mobility up to 9.71 cm(2) V(-1) s(-1) .

54 nsistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures est

55 coupled state, reflecting mostly a change in field-effect mobility.

56 Here we report field-effect modulation of solution electrochemistry at

57 erent patients, revealed a molecular subtype field effect; multiple tumors had different mutations th

58 ing is determined by the differential ligand field effect of Cl(-) versus OH(-) on the Fe center.

59 l roles in magnetoreception because magnetic-field effects of light-induced radical pairs strongly de

60 In the field, effects of oxygen availability on nonlethal impac

61 ere we demonstrate that the primary magnetic field effect on flavin photoreactions can be amplified c

62 nd valence bands, and elucidate the magnetic-field effect on photoluminescence and its dependence on

63 However, electric field effects on domain wall velocities have only been o

64 We report abnormal magnetic field effects on electrogenerated chemiluminescence (MFE

65 Biophysical models on magnetic field effects on radical pairs generally assume that the

66 Miniaturized two-terminal field effect point sensors can also be fabricated, using

67 d spin-torque devices compatible with modern field-effect semiconductor technologies.

68 The Field Effect sensors are broadly used for detecting vari

69 Furthermore, a "field-effect solar cell" is successfully developed and i

70 In parallel, the EIS field-effect structure allows the real-time electrochemi

71 3 interface is a good candidate for a tunnel field effect (TFET)-type device.

72 This suggests an environmental field effect that promotes multiple tumours likely in th

73 nce, the maquettes exhibit a strong magnetic field effect that rivals those observed in the natural p

74 monstrate that the Electrolyte Gated Organic Field Effect Transistor (EGOFET) is an ultrasensitive an

75 In this work, we developed a field effect transistor (FET) biosensor utilizing soluti

76 trand displacement-based probe on a graphene field effect transistor (FET) for high-specificity, sing

77 functionalized reduced graphene oxide (rGO) field effect transistor (FET) is reported.

78 MOSFET, strain is exerted to a bilayer MoS2 field effect transistor (FET) through deposition of a si

79 sed competitive affinity assay in a graphene field effect transistor (FET), and demonstrate the utili

80 of most of the detecting devices, including field effect transistor (FET)-based devices.

81 nosensor based on antibody-modified graphene field effect transistor (GFET) was presented.

82 which the pH sensitivity of an Ion Sensitive Field Effect transistor (ISFET) sensor can be significan

83 tive surface of a conventional ion-selective field effect transistor (ISFET) with the afforded SAM re

84 of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both

85 t with the goal of favoring unipolar organic field effect transistor characteristics.

86 A single-layer GNM field effect transistor exhibited promising drive curren

87 refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET, allows sub-60 mV/dec

88 describes a pressure tolerant Ion Sensitive Field Effect Transistor pH sensor that is based on the H

89 printable graphene-based electrochemical and field effect transistor sensors for some important analy

90 ea chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual

91 accomplished this by integrating a graphene field effect transistor with a scanning tunnelling micro

92 ansduction using an AlGaN/GaN heterojunction field effect transistor-integrated GaN microcantilever t

93 ealization of highly sensitive and selective field effect transistor-type lactate biosensor.

94 (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit

95 ognition unit with a sensitive extended-gate field-effect transistor (EG-FET) transducer leads to hig

96 rtz crystal resonator (QCR) or extended-gate field-effect transistor (EG-FET) transducers integrated

97 unosensor based on electrolyte-gated organic field-effect transistor (EGOFET) was developed for the d

98 A black phosphorous (BP)-based field-effect transistor (FET) biosensor was fabricated b

99 of single human CD8(+) T cells on pre-coated field-effect transistor (FET) devices (i.e. fibronectin,

100 Field-effect transistor (FET) electron mobilities musat

101 (BHV-1) this study employs an extended-gate field-effect transistor (FET) for direct potentiometric

102 Here, a field-effect transistor (FET) sensor device is fabricate

103 Nanomaterial-based field-effect transistor (FET) sensors are capable of lab

104 In this review, different field-effect transistor (FET) structures and detection p

105 An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterost

106 nsor based on a reduced graphene oxide (rGO) field-effect transistor (FET), functionalized by the odo

107 larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with

108 is work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-f

109 e accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated wit

110 aterials in the preparation of ion-sensitive field-effect transistor (ISFET) based biosensors, includ

111 reshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec(-1) at roo

112 f inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the su

113 f nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advant

114 g an n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET).

115 tethered to a single-walled carbon nanotube field-effect transistor (SWCNT-FET) to investigate accom

116 Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-

117 tion recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their

118 Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanom

119 dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge

120 tive magnetic field in the channel of a spin field-effect transistor and the spin Hall effect are the

121 e OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA i

122 Furthermore, carbo-benzene junctions exhibit field-effect transistor behaviour when an electrochemica

123 te the successful fabrication of a promising field-effect transistor biosensor for EVD diagnosis.

124 A, which incorporates an amplifying nanowire field-effect transistor biosensor, is able to offer supe

125 rescence-based, nanomonitors, SPR-based, and field-effect transistor biosensors for early detection a

126 Furthermore initial field-effect transistor characteristics are evaluated, w

127 ore been proposed, but these differ from the field-effect transistor concept and require the use of o

128 ron nitride/graphene) in a semifloating gate field-effect transistor configuration.

129 the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully appli

130 Organic field-effect transistor device data show an ambipolar pe

131 ive membranes (ISMs) were drop-casted onto a field-effect transistor device that consisted of a singl

132 Single-crystal-based field-effect transistor devices of PBC exhibited efficie

133 ing high current on/off ratios up to 6000 in field-effect transistor devices.

134 upregulate and downregulate the response of field-effect transistor devices.

135 istic Dirac peaks for a single-gate graphene field-effect transistor embodiment that exhibits hole an

136 the first time in a three-terminal graphene field-effect transistor embodiment, we introduce a rapid

137 The spin field-effect transistor envisioned by Datta and Das open

138 ssible, the realization of a functional spin field-effect transistor for information processing has y

139 sotropy (VCMA) in Au/[DEME](+) [TFSI](-) /Co field-effect transistor heterostructures is addressed.

140 semiconductor molecules in a single crystal field-effect transistor in order to correlate the measur

141 t an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are ove

142 Thin-film field-effect transistor is a fundamental component behin

143 y and nonvolatility compared to conventional field-effect transistor logic.

144 mising hole mobility, which was evaluated by field-effect transistor measurements.

145 further chemical treatment, as determined by field-effect transistor measurements.

146 ave developed a reduced graphene oxide-based field-effect transistor method for real-time detection o

147 type doping that simultaneously improves the field-effect transistor mobility and on/off current rati

148 sing the classical metal oxide-semiconductor field-effect transistor model.

149 Devices are successfully fabricated on a field-effect transistor platform with this approach, and

150 ochemiluminescence, photoelectrochemical and field-effect transistor sensors.

151 tronic coupling, and thus a NW-based organic field-effect transistor shows high field-effect mobility

152 oS2 followed by lithographic definition of a field-effect transistor structure on top.

153 al insulator (TI) thin film using a top-gate field-effect transistor structure.

154 order of 1-5 cm(2) V(-1) s(-1), supported by field-effect transistor studies of slightly doped sample

155 ) in a microcavity-integrated light-emitting field-effect transistor to realize efficient electrical

156 In a field-effect transistor using a transferred lead zircona

157 We propose a prototype spin wave field-effect transistor which realizes a gate-tunable ma

158 oassay based on an electrolyte-gated organic field-effect transistor whose organic semiconductor is p

159 nstrate that a photoresponsive bi-functional field-effect transistor with carrier mobilities exceedin

160 herein VO2 is implemented in series with the field-effect transistor's source rather than into the ch

161 s set up the plasma membrane as a biological field-effect transistor, allowing membrane potential to

162 Here, we report a silicene field-effect transistor, corroborating theoretical expec

163 ube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative

164 e black phosphorus as an active channel of a field-effect transistor, is devised.

165 vice, which is the polariton equivalent to a field-effect transistor, relies on combining electro-opt

166 -BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxi

167 Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates D

168 etical limit for a metal-oxide-semiconductor field-effect transistor.

169 emperature through electrostatic doping in a field-effect transistor.

170 spintronic devices, such as the topological field-effect transistor.

171 tes enhanced performance over a conventional field-effect transistor.

172 rroelectric field effect in a prototype Mott field-effect transistor.

173 er MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors.

174 While implementing such materials into field-effect-transistor technology can potentially augme

175 Field effect transistors (FET) have been widely used as

176 Field effect transistors (FETs) based on 2D TMDs are bas

177 Field effect transistors (FETs) have been fabricated bas

178 Arrays of pentacene field effect transistors (FETs) with various channel len

179 tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent

180 (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with Schottky contact

181 Silicon nanowire field effect transistors (NWFETs) are low noise, low pow

182 nary studies of their performance in organic field effect transistors (OFETs) indicate the potential

183 Tunneling field effect transistors (TFETs) have been proposed to o

184 vice substrates, and we fabricate dual-gated field effect transistors based on the domain walls.

185 age, and carrier mobility of the alloy-based field effect transistors can be systematically modulated

186 In particular, GeSn field effect transistors can exhibit very high performan

187 vantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz

188 A critical challenge to translating field effect transistors into biochemical sensor platfor

189 2 in electronic device architectures such as field effect transistors may need to be reevaluated.

190 D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, g

191 rting or ambipolar semiconductors in organic field effect transistors.

192 tion from the source electrode in back-gated field effect transistors.

193 eV and are p-type semiconductors in organic field effect transistors.

194 linesterase-modified AlGaN/GaN solution-gate field-effect transistors (AcFETs) are quantitatively ana

195 rocessable electrolyte-gated carbon nanotube field-effect transistors (CNT-FETs) are a simple and cos

196 properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit (qubit) d

197 c decrease of charge mobilities by utilizing field-effect transistors (FET) based on two phases of ti

198 The study reports the use of extended gate field-effect transistors (FET) for the label-free and se

199 stem comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-condition

200 d device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by mode

201 Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycl

202 t mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates

203 w ~150 K, indicating that insofar WSe2-based field-effect transistors (FETs) display the largest Hall

204 rier type in molybdenum ditelluride (MoTe2 ) field-effect transistors (FETs) is described, through ra

205 -based applications of biomolecule-decorated field-effect transistors (FETs) range from biosensors to

206 In our study we use ion-sensitive field-effect transistors (FETs) to analyze the apoptosis

207 bilized penicillinase layers on pH-sensitive field-effect transistors (FETs) using an analytical kine

208 rigid and flexible radio-frequency graphene field-effect transistors (G-FETs) were demonstrated, wit

209 e of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC)

210 ere we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate d

211 ansport modeling of photocurrent in graphene field-effect transistors (including realistic electromag

212 Ion sensitive field-effect transistors (ISFET) are the basis of radica

213 detection based on metal-oxide-semiconductor field-effect transistors (MOSFETs).

214 ility and the double slope of p-type organic field-effect transistors (OFETs) fabricated from low-ban

215 s) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence

216 ganic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), solar cells or other l

217 ential for practical applications of organic field-effect transistors (OFETs).

218 d synthesized for the fabrication of organic field-effect transistors (OFETs).

219 Penicillinase-modified AlGaN/GaN field-effect transistors (PenFETs) are utilized to syste

220 and urease onto reduced-graphene-oxide based field-effect transistors (rGO FETs) for the detection of

221 chnology based on arrays of silicon nanowire field-effect transistors (SiNW FETs) is described and ha

222 Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-d

223 p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated.

224 ctronics targeting applications ranging from field-effect transistors and light-emitting diodes to me

225 e, selenophene, and tellurophene) for use in field-effect transistors and organic photovoltaic device

226 Field-effect transistors and photovoltaic cells demonstr

227 g electronic properties for high-performance field-effect transistors and ultra-low power devices suc

228 Thin-film field-effect transistors are essential elements of stret

229 Average charge carrier mobilities in field-effect transistors are found to increase by up to

230 ting aptamers as the recognition element and field-effect transistors as the signal transducer.

231 by monitoring electrical parameters of MoS2 field-effect transistors as their environment is changed

232 Top-gated field-effect transistors based on Bi2O2Se crystals down

233 between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfol

234 Moreover, field-effect transistors based on these films are deplet

235 ance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microsco

236 r p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reporte

237 s investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enab

238 nstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies

239 Organic thin-film field-effect transistors fabricated from these materials

240 e optical and electrical characterization of field-effect transistors fabricated on both materials.

241 on (CTE) of the consecutive device layers of field-effect transistors generates trapping states that

242 Multi-electrode field-effect transistors have been integrated on a singl

243 Organic field-effect transistors hold the promise of enabling lo

244 n analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band

245 esults re-strengthen the promise of graphene field-effect transistors in next generation semiconducto

246 istor (OPBT) competing with the best organic field-effect transistors in performance, while employing

247 The use of field-effect transistors is a novel approach to study th

248 Field-effect transistors made from the few-layer PdSe2 d

249 cal transport measurements indicate that the field-effect transistors of the junction show an ultra-l

250 We fabricate all-nanocrystal field-effect transistors on flexible plastics with elect

251 t vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leaka

252 ate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-ef

253 Single-crystal field-effect transistors show a remarkable average satur

254 Thus, nanowire-based field-effect transistors show extremely high field-effec

255 ropose two-dimensional topological insulator field-effect transistors that switch based on the modula

256 This consequently allows ambipolar field-effect transistors to be transformed into high-per

257 estigations, microscale single-crystal fiber field-effect transistors were also fabricated.

258 brication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the

259 netic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below

260 ropic dissolution" allows the preparation of field-effect transistors with an electron mobility of 1

261 abrication of high-performance short-channel field-effect transistors with bottom-up synthesized armc

262 us-exfoliated phosphorene flakes are used in field-effect transistors with high drive currents and cu

263 bbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1

264 00 square centimeters per volt per second in field-effect transistors with microwave-reduced GO (MW-r

265 Field-effect transistors with patterned channels show si

266 bility of 6.6 cm(2) V(-1) s(-1) in top-gated field-effect transistors with pentafluorobenzenethiol-mo

267 Here, we present submicron field-effect transistors with specially designed low-res

268 antages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry.

269 ions, ranging from random access memories to field-effect transistors, and tunnelling devices.

270 aracteristics are like those of conventional field-effect transistors, at large drain-source bias neg

271 anoribbons show promise for high-performance field-effect transistors, however they often suffer from

272 generation thin film electronic devices like field-effect transistors, light-emitting diodes, and sol

273 ures also known as heterostructures, such as field-effect transistors, require robust and reproducibl

274 escribe the electrical properties of organic field-effect transistors, such as mobility and threshold

275 erformance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising imple

276 ic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, a

277 We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive perf

278 ls and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies

279 -1) s(-1) in bottom-gate top-contact organic field-effect transistors.

280 backbone and the pi-pi stacking direction in field-effect transistors.

281 equently incorporated as the active layer in field-effect transistors.

282 avior, and can be used in photodetectors and field-effect transistors.

283 hnology is also used increasingly in organic field-effect transistors.

284 yocardial infarction, using silicon nanowire field-effect transistors.

285 on the switching characteristics of organic field-effect transistors.

286 g with lower gate voltages than conventional field-effect transistors.

287 ntal limitations on the power consumption of field-effect transistors.

288 y thin-film electrodes and channel layers of field-effect transistors.

289 mparable to existing thin-film ferroelectric field-effect transistors.

290 anotube and n-type indium gallium zinc oxide field-effect transistors.

291 he charge mobility of rubrene single-crystal field-effect transistors.

292 t magnitudes along the conducting channel in field-effect transistors.

293 ble photoluminescence and gate modulation in field-effect transistors.

294 nic semiconductors used in photovoltaics and field-effect transistors.

295 nd ultra-low power devices such as tunneling field-effect transistors.

296 cture and the charge-transport properties in field-effect transistors.

297 ecord performance for melt-processed organic field-effect transistors.

298 tion of these effects in atomically-thin WS2 field-effect transistors.

299 The high temperature performance oforganic field-effect transistorsbased on a molecular organic sem

300 ies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain curre