ライフサイエンスコーパス: field effect transistor

1 y barrier MOSFETs (metal-oxide-semiconductor field-effect transistors).

2 etical limit for a metal-oxide-semiconductor field-effect transistor.

3 emperature through electrostatic doping in a field-effect transistor.

4 spintronic devices, such as the topological field-effect transistor.

5 tes enhanced performance over a conventional field-effect transistor.

6 caling down of the silicon-based metal-oxide field-effect transistor.

7 t site-specific detection of target DNA as a field-effect transistor.

8 rroelectric field effect in a prototype Mott field-effect transistor.

9 rting or ambipolar semiconductors in organic field effect transistors.

10 room temperature, and opens the door to spin field effect transistors.

11 for use in organic photovoltaics and organic field effect transistors.

12 c-encapsulated, DNA-modified carbon nanotube field effect transistors.

13 tion from the source electrode in back-gated field effect transistors.

14 eV and are p-type semiconductors in organic field effect transistors.

15 hnology is also used increasingly in organic field-effect transistors.

16 yocardial infarction, using silicon nanowire field-effect transistors.

17 on the switching characteristics of organic field-effect transistors.

18 g with lower gate voltages than conventional field-effect transistors.

19 ntal limitations on the power consumption of field-effect transistors.

20 y thin-film electrodes and channel layers of field-effect transistors.

21 mparable to existing thin-film ferroelectric field-effect transistors.

22 anotube and n-type indium gallium zinc oxide field-effect transistors.

23 he charge mobility of rubrene single-crystal field-effect transistors.

24 t magnitudes along the conducting channel in field-effect transistors.

25 ble photoluminescence and gate modulation in field-effect transistors.

26 lectronic devices such as photodetectors and field-effect transistors.

27 turn, impact the charge transport in organic field-effect transistors.

28 s) can form conduction channels of tunneling field-effect transistors.

29 nic semiconductors used in photovoltaics and field-effect transistors.

30 nd ultra-low power devices such as tunneling field-effect transistors.

31 cture and the charge-transport properties in field-effect transistors.

32 ecord performance for melt-processed organic field-effect transistors.

33 tion of these effects in atomically-thin WS2 field-effect transistors.

34 -1) s(-1) in bottom-gate top-contact organic field-effect transistors.

35 backbone and the pi-pi stacking direction in field-effect transistors.

36 equently incorporated as the active layer in field-effect transistors.

37 avior, and can be used in photodetectors and field-effect transistors.

38 linesterase-modified AlGaN/GaN solution-gate field-effect transistors (AcFETs) are quantitatively ana

39 s set up the plasma membrane as a biological field-effect transistor, allowing membrane potential to

40 dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge

41 ar structure on charge carrier mobilities in field effect transistors and the performance of photovol

42 tive magnetic field in the channel of a spin field-effect transistor and the spin Hall effect are the

43 ctronics targeting applications ranging from field-effect transistors and light-emitting diodes to me

44 e, selenophene, and tellurophene) for use in field-effect transistors and organic photovoltaic device

45 Field-effect transistors and photovoltaic cells demonstr

46 ormation processing, Josephson junctions and field-effect transistors and provide a unique test bed f

47 g electronic properties for high-performance field-effect transistors and ultra-low power devices suc

48 es, micro- and nano-cantilever sensors, gene Field Effect Transistors, and nanowire and nanopore base

49 tting diodes, organic photovoltaics, organic field effect transistors, and other electronic devices.

50 e, a current on/off ratio exceeding 10(8) in field-effect transistors, and efficient valley and spin

51 imaging, and flexible light emitting diodes, field-effect transistors, and photovoltaics has largely

52 antages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry.

53 ions, ranging from random access memories to field-effect transistors, and tunnelling devices.

54 P-containing polymers recently developed for field-effect transistor applications including diphenyl-

55 materials that have shown promise in organic field-effect transistor applications, but have not perfo

56 thout serious alteration of the conventional field effect transistor architecture.

57 r and H(+)-type and OH(-)-type complementary field effect transistors are demonstrated.

58 Thin-film field-effect transistors are essential elements of stret

59 Average charge carrier mobilities in field-effect transistors are found to increase by up to

60 e, from chemical vapour deposition graphene, field-effect transistor arrays with two features represe

61 e OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA i

62 rial's electronic properties are measured by field effect transistors as a function of temperature an

63 ting aptamers as the recognition element and field-effect transistors as the signal transducer.

64 by monitoring electrical parameters of MoS2 field-effect transistors as their environment is changed

65 Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanom

66 0 nm-wide GNRs, enabling them to function as field-effect transistors at room temperature.

67 aracteristics are like those of conventional field-effect transistors, at large drain-source bias neg

68 This extended gate field effect transistor based sensors can be used as a p

69 vice substrates, and we fabricate dual-gated field effect transistors based on the domain walls.

70 Field effect transistors based on these polymers show ex

71 Top-gated field-effect transistors based on Bi2O2Se crystals down

72 between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfol

73 Field-effect transistors based on such nanotube arrays e

74 Moreover, field-effect transistors based on these films are deplet

75 ion in electrolytic environments, such as in field-effect transistor-based biosensors.

76 Furthermore, carbo-benzene junctions exhibit field-effect transistor behaviour when an electrochemica

77 Field-effect transistor biomolecular sensors based on lo

78 te the successful fabrication of a promising field-effect transistor biosensor for EVD diagnosis.

79 A, which incorporates an amplifying nanowire field-effect transistor biosensor, is able to offer supe

80 rescence-based, nanomonitors, SPR-based, and field-effect transistor biosensors for early detection a

81 oping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, tw

82 ance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microsco

83 r p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reporte

84 ormance of solution-processed n-type organic field-effect transistors by using trace amounts of molec

85 age, and carrier mobility of the alloy-based field effect transistors can be systematically modulated

86 In particular, GeSn field effect transistors can exhibit very high performan

87 t with the goal of favoring unipolar organic field effect transistor characteristics.

88 Furthermore initial field-effect transistor characteristics are evaluated, w

89 nal improvements in self-assembled monolayer field-effect transistors: classical molecular dynamics (

90 rocessable electrolyte-gated carbon nanotube field-effect transistors (CNT-FETs) are a simple and cos

91 ore been proposed, but these differ from the field-effect transistor concept and require the use of o

92 ron nitride/graphene) in a semifloating gate field-effect transistor configuration.

93 Here, we report a silicene field-effect transistor, corroborating theoretical expec

94 the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully appli

95 s investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enab

96 nanotube heterostructure in which a nanowire field-effect transistor detector is synthetically integr

97 ch a kinked silicon nanowire with an encoded field-effect transistor detector serves as the tip end.

98 Organic field-effect transistor device data show an ambipolar pe

99 ive membranes (ISMs) were drop-casted onto a field-effect transistor device that consisted of a singl

100 Single-crystal-based field-effect transistor devices of PBC exhibited efficie

101 arbon nanotubes on various substrates and in field-effect transistor devices using polarization-based

102 When integrated into field-effect transistor devices, the molecule with the h

103 ing high current on/off ratios up to 6000 in field-effect transistor devices.

104 upregulate and downregulate the response of field-effect transistor devices.

105 ue values of up to 0.11 cm(2) V(-1) s(-1) in field-effect transistor devices.

106 Nonetheless, graphene field-effect transistor DNA sensors have been studied ma

107 nstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies

108 (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit

109 ognition unit with a sensitive extended-gate field-effect transistor (EG-FET) transducer leads to hig

110 rtz crystal resonator (QCR) or extended-gate field-effect transistor (EG-FET) transducers integrated

111 The finally MIP film-coated extended-gate field-effect transistor (EG-FET) was used for signal tra

112 nzymatic sensor using off-chip extended-gate field effect transistor (EGFET) with a ferrocenyl-alkane

113 monstrate that the Electrolyte Gated Organic Field Effect Transistor (EGOFET) is an ultrasensitive an

114 unosensor based on electrolyte-gated organic field-effect transistor (EGOFET) was developed for the d

115 istic Dirac peaks for a single-gate graphene field-effect transistor embodiment that exhibits hole an

116 the first time in a three-terminal graphene field-effect transistor embodiment, we introduce a rapid

117 Integrated surround-gate field-effect-transistors enabled by bottom-up synthesis

118 The spin field-effect transistor envisioned by Datta and Das open

119 A single-layer GNM field effect transistor exhibited promising drive curren

120 Organic thin-film field-effect transistors fabricated from these materials

121 e optical and electrical characterization of field-effect transistors fabricated on both materials.

122 A Functional Bio-Interlayer Organic Field-Effect Transistor (FBI-OFET) sensor, embedding a s

123 In this work, we developed a field effect transistor (FET) biosensor utilizing soluti

124 trand displacement-based probe on a graphene field effect transistor (FET) for high-specificity, sing

125 functionalized reduced graphene oxide (rGO) field effect transistor (FET) is reported.

126 MOSFET, strain is exerted to a bilayer MoS2 field effect transistor (FET) through deposition of a si

127 sed competitive affinity assay in a graphene field effect transistor (FET), and demonstrate the utili

128 of most of the detecting devices, including field effect transistor (FET)-based devices.

129 Field effect transistors (FET) have been widely used as

130 A black phosphorous (BP)-based field-effect transistor (FET) biosensor was fabricated b

131 of single human CD8(+) T cells on pre-coated field-effect transistor (FET) devices (i.e. fibronectin,

132 Field-effect transistor (FET) electron mobilities musat

133 (BHV-1) this study employs an extended-gate field-effect transistor (FET) for direct potentiometric

134 Here, a field-effect transistor (FET) sensor device is fabricate

135 Nanomaterial-based field-effect transistor (FET) sensors are capable of lab

136 In this review, different field-effect transistor (FET) structures and detection p

137 NCNs were integrated into a liquid-ion gated field-effect transistor (FET) system via immobilization

138 An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterost

139 nsor based on a reduced graphene oxide (rGO) field-effect transistor (FET), functionalized by the odo

140 larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with

141 er that enhances the photoresponse in n-type field-effect transistors (FET) and lateral photoconducto

142 properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit (qubit) d

143 c decrease of charge mobilities by utilizing field-effect transistors (FET) based on two phases of ti

144 The study reports the use of extended gate field-effect transistors (FET) for the label-free and se

145 er MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors.

146 Field effect transistors (FETs) based on 2D TMDs are bas

147 Field effect transistors (FETs) have been fabricated bas

148 Arrays of pentacene field effect transistors (FETs) with various channel len

149 stem comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-condition

150 d device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by mode

151 Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycl

152 t mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates

153 w ~150 K, indicating that insofar WSe2-based field-effect transistors (FETs) display the largest Hall

154 rier type in molybdenum ditelluride (MoTe2 ) field-effect transistors (FETs) is described, through ra

155 -based applications of biomolecule-decorated field-effect transistors (FETs) range from biosensors to

156 In our study we use ion-sensitive field-effect transistors (FETs) to analyze the apoptosis

157 nalized single-walled carbon nanotube (SWNT) field-effect transistors (FETs) to use as a fast and acc

158 bilized penicillinase layers on pH-sensitive field-effect transistors (FETs) using an analytical kine

159 Field-effect transistors (FETs) with 1T phase electrodes

160 ty that is achieved in top-gate P(NDI2OD-T2) field-effect transistors (FETs), while the bulk face-on

161 Thus, previous efforts to realize a field effect transistor for logic applications have assu

162 vantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz

163 ssible, the realization of a functional spin field-effect transistor for information processing has y

164 microRNAs (miRNAs) using a carbon nanotubes field-effect transistor functionalized with the Carnatio

165 rigid and flexible radio-frequency graphene field-effect transistors (G-FETs) were demonstrated, wit

166 on (CTE) of the consecutive device layers of field-effect transistors generates trapping states that

167 nosensor based on antibody-modified graphene field effect transistor (GFET) was presented.

168 is work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-f

169 e accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated wit

170 e of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC)

171 ere we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate d

172 Field effect transistors have risen as one of the most p

173 Multi-electrode field-effect transistors have been integrated on a singl

174 sotropy (VCMA) in Au/[DEME](+) [TFSI](-) /Co field-effect transistor heterostructures is addressed.

175 Organic field-effect transistors hold the promise of enabling lo

176 anoribbons show promise for high-performance field-effect transistors, however they often suffer from

177 semiconductor molecules in a single crystal field-effect transistor in order to correlate the measur

178 t an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are ove

179 Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin film

180 n analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band

181 esults re-strengthen the promise of graphene field-effect transistors in next generation semiconducto

182 istor (OPBT) competing with the best organic field-effect transistors in performance, while employing

183 ansport modeling of photocurrent in graphene field-effect transistors (including realistic electromag

184 D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, g

185 ansduction using an AlGaN/GaN heterojunction field effect transistor-integrated GaN microcantilever t

186 A critical challenge to translating field effect transistors into biochemical sensor platfor

187 Thin-film field-effect transistor is a fundamental component behin

188 The use of field-effect transistors is a novel approach to study th

189 the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temper

190 ube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative

191 e black phosphorus as an active channel of a field-effect transistor, is devised.

192 The electrodes studied include Ion Sensitive Field Effect Transistor (ISFET) pH electrodes, and Chlor

193 which the pH sensitivity of an Ion Sensitive Field Effect transistor (ISFET) sensor can be significan

194 The chip has ion-sensitive field effect transistor (ISFET) sensors, temperature sen

195 tive surface of a conventional ion-selective field effect transistor (ISFET) with the afforded SAM re

196 the initial development of an ion-sensitive field effect transistor (ISFET)-based screening assay fo

197 aterials in the preparation of ion-sensitive field-effect transistor (ISFET) based biosensors, includ

198 conventional glass membrane or ion-selective field-effect transistor (ISFET) pH sensing technologies

199 developing technologies is the ion-sensitive field-effect transistor (ISFET), a biochemical to electr

200 Ion sensitive field-effect transistors (ISFET) are the basis of radica

201 generation thin film electronic devices like field-effect transistors, light-emitting diodes, and sol

202 y and nonvolatility compared to conventional field-effect transistor logic.

203 We propose a topological field effect transistor made of van der Waals heterostru

204 Field-effect transistors made from the few-layer PdSe2 d

205 Field-effect transistors made from these arrays exhibit

206 2 in electronic device architectures such as field effect transistors may need to be reevaluated.

207 mising hole mobility, which was evaluated by field-effect transistor measurements.

208 further chemical treatment, as determined by field-effect transistor measurements.

209 ave developed a reduced graphene oxide-based field-effect transistor method for real-time detection o

210 However, current ion-sensitive field effect transistor methods for sensing nucleic acid

211 type doping that simultaneously improves the field-effect transistor mobility and on/off current rati

212 sing the classical metal oxide-semiconductor field-effect transistor model.

213 reshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec(-1) at roo

214 f inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the su

215 tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent

216 detection based on metal-oxide-semiconductor field-effect transistors (MOSFETs).

217 f nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advant

218 (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with Schottky contact

219 Silicon nanowire field effect transistors (NWFETs) are low noise, low pow

220 cal transport measurements indicate that the field-effect transistors of the junction show an ultra-l

221 nary studies of their performance in organic field effect transistors (OFETs) indicate the potential

222 ility and the double slope of p-type organic field-effect transistors (OFETs) fabricated from low-ban

223 s) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence

224 Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressi

225 ganic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), solar cells or other l

226 ential for practical applications of organic field-effect transistors (OFETs).

227 d synthesized for the fabrication of organic field-effect transistors (OFETs).

228 We fabricate all-nanocrystal field-effect transistors on flexible plastics with elect

229 t vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leaka

230 ate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-ef

231 refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET, allows sub-60 mV/dec

232 Penicillinase-modified AlGaN/GaN field-effect transistors (PenFETs) are utilized to syste

233 describes a pressure tolerant Ion Sensitive Field Effect Transistor pH sensor that is based on the H

234 on two elements: (i) a pH-sensitive chemical field effect transistor (pH-ChemFET) and (ii) a metallic

235 s promising applications in high-performance field-effect transistors, phototransistors, spintronic d

236 Devices are successfully fabricated on a field-effect transistor platform with this approach, and

237 g an n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET).

238 ls and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies

239 (QRE) paired with a pH-insensitive reference field effect transistor (REFET) for detection of real-ti

240 vice, which is the polariton equivalent to a field-effect transistor, relies on combining electro-opt

241 ures also known as heterostructures, such as field-effect transistors, require robust and reproducibl

242 Vacuum-processed organic field effect transistors reveal CbDI and BfDI derivative

243 and urease onto reduced-graphene-oxide based field-effect transistors (rGO FETs) for the detection of

244 herein VO2 is implemented in series with the field-effect transistor's source rather than into the ch

245 Here we report an organic field-effect transistor sensor that overcomes this barri

246 printable graphene-based electrochemical and field effect transistor sensors for some important analy

247 The organic field-effect transistor sensors are further capable of s

248 More importantly, these organic field-effect transistor sensors are stable in both fresh

249 ochemiluminescence, photoelectrochemical and field-effect transistor sensors.

250 of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both

251 Single-crystal field-effect transistors show a remarkable average satur

252 Thus, nanowire-based field-effect transistors show extremely high field-effec

253 CuInSe(x)S(2-x) quantum dot field-effect transistors show p-type, n-type, and ambipo

254 tronic coupling, and thus a NW-based organic field-effect transistor shows high field-effect mobility

255 Silicon nanowire field effect transistors (SiNW-FETs) have shown great pr

256 chnology based on arrays of silicon nanowire field-effect transistors (SiNW FETs) is described and ha

257 In applications of silicon nanowire field-effect transistors (SiNW-FETs) as biosensors, the

258 oS2 followed by lithographic definition of a field-effect transistor structure on top.

259 al insulator (TI) thin film using a top-gate field-effect transistor structure.

260 ea chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual

261 order of 1-5 cm(2) V(-1) s(-1), supported by field-effect transistor studies of slightly doped sample

262 escribe the electrical properties of organic field-effect transistors, such as mobility and threshold

263 erformance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising imple

264 tethered to a single-walled carbon nanotube field-effect transistor (SWCNT-FET) to investigate accom

265 While implementing such materials into field-effect-transistor technology can potentially augme

266 Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-

267 tion recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their

268 Tunneling field effect transistors (TFETs) have been proposed to o

269 ver, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained stati

270 e (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled st

271 ropose two-dimensional topological insulator field-effect transistors that switch based on the modula

272 -BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxi

273 ic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, a

274 ) in a microcavity-integrated light-emitting field-effect transistor to realize efficient electrical

275 This consequently allows ambipolar field-effect transistors to be transformed into high-per

276 Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-d

277 ealization of highly sensitive and selective field effect transistor-type lactate biosensor.

278 In a field-effect transistor using a transferred lead zircona

279 Field-effect transistors using 5 nm BP along x direction

280 p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated.

281 fabrication of a new generation of vertical field-effect transistors (VFETs) with a room temperature

282 estigations, microscale single-crystal fiber field-effect transistors were also fabricated.

283 As a proof of concept, top-gated field-effect transistors were fabricated with BV-doped n

284 Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates D

285 We propose a prototype spin wave field-effect transistor which realizes a gate-tunable ma

286 We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive perf

287 oassay based on an electrolyte-gated organic field-effect transistor whose organic semiconductor is p

288 accomplished this by integrating a graphene field effect transistor with a scanning tunnelling micro

289 nstrate that a photoresponsive bi-functional field-effect transistor with carrier mobilities exceedin

290 brication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the

291 netic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below

292 ropic dissolution" allows the preparation of field-effect transistors with an electron mobility of 1

293 abrication of high-performance short-channel field-effect transistors with bottom-up synthesized armc

294 us-exfoliated phosphorene flakes are used in field-effect transistors with high drive currents and cu

295 bbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1

296 00 square centimeters per volt per second in field-effect transistors with microwave-reduced GO (MW-r

297 Field-effect transistors with patterned channels show si

298 bility of 6.6 cm(2) V(-1) s(-1) in top-gated field-effect transistors with pentafluorobenzenethiol-mo

299 of the most recent demonstrations of organic field-effect transistors with performance that clearly e

300 Here, we present submicron field-effect transistors with specially designed low-res