ライフサイエンスコーパス: gallium

1 dducts, even with bulky aryl substituents at gallium.

2 nd systems, even with halide substituents at gallium.

3 g efficiencies are > 10(3) greater than from gallium.

4 onvection experiments using the liquid metal gallium.

5 a remarkable family of boron, aluminium and gallium [(18)F]-fluoride anion complexing agents which c

6 ded technetium 99m ( 99m Tc) sulfur colloid, gallium 67, and 99m Tc iminodiacetate acid analogues.

7 Orally ingested gallium 67-labeled egg and intravenously administered te

8 hy, labeled leukocyte scintigraphy (LS), and Gallium-67 citrate scintigraphy for the diagnosis of CIE

9 imetry was used to evaluate the germanium 68/gallium 68 rod sources.

10 Gallium-68 ((68)Ga) is a generator-produced radionuclide

11 Gallium-68 is a generator-produced radionuclide for posi

12 This study tested the efficacy of gallium-68-labeled DOTATATE ((68)Ga-DOTATATE), a somatos

13 adiolabeled with carbon-11, fluorine-18, and gallium-68.

14 The ab initio modeling of gallium acinetoferrin, GaAf, and analogues derived from

15 Recent investigations show that gallium activates caspases and induces apoptosis through

16 red cubic (fcc) delta-plutonium-0.6 weight % gallium alloy.

17 rystals with tunable properties according to gallium amount.

18 based on resistance to the toxic iron analog gallium, an hFbpABC inhibitor, was devised.

19 tances near the sum of the covalent radii of gallium and boron, as well as some close Ga...F contacts

20 upported these SAMs, and a eutectic alloy of gallium and indium (EGaIn), covered with a skin of galli

21 pped Au and contacted by a eutectic alloy of gallium and indium top contacts.

22 2)- or -CONH-, and EGaIn = eutectic alloy of gallium and indium).

23 d silver, and EGaIn is the eutectic alloy of gallium and indium.

24 ed silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of in

25 Because of similarities in the transport of gallium and iron and the use of (67)Ga scanning in lymph

26 FO) nanocrystals (NCs) with control over the gallium and iron content.

27 PSMA I&T and its cold gallium and lutetium analog revealed nanomolar affinity

28 als important in emerging electronics (e.g., gallium and selenium) are largely those related to suppl

29 F-FDG, such as positron-emitting isotopes of gallium and the cellular proliferation marker 18F-3'-deo

30 The contact interface between gallium and the rough object is illustrated in the magni

31 y to national minor metals systems: rhenium, gallium, and germanium in the United States in 2012.

32 c hydroxide structures formed from aluminum, gallium, and indium.

33 he activation barrier of the key step of the gallium- and indium-catalyzed cycloisomerization of 1,6-

34 (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten

35 The most important applications of gallium are NdFeB permanent magnets, integrated circuits

36 Here we image gallium arsenide (GaAs) nanowires during growth as they

37 Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon

38 dy correlations among electrons and holes in gallium arsenide (GaAs) quantum wells.

39 We present data from an induced gallium arsenide (GaAs) quantum wire that exhibits an ad

40 abrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technolo

41 t ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory

42 lthough semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) hav

43 For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in th

44 The lattice matched Indium Gallium Arsenide (In0.53Ga0.47As) is identified as a bet

45 sition charged arsenic (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic pre

46 The semiconductor materials include silicon, gallium arsenide and gallium nitride, co-integrated with

47 temporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial l

48 Measurements of unstrained gallium arsenide and strained indium gallium arsenide sa

49 Single electron spins in gallium arsenide are a leading candidate among implement

50 rical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devic

51 gh-purity two-dimensional electron fluids in gallium arsenide devices.

52 mics in strained gallium arsenide and indium gallium arsenide epitaxial layers.

53 ) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectr

54 igh-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of hig

55 , limited by hyperfine interactions with the gallium arsenide host nuclei.

56 High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of

57 Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireles

58 able metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type reson

59 dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparti

60 and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates.

61 , consistent with coupling rates obtained in gallium arsenide quantum dots.

62 ole and light-hole excitonic resonances in a gallium arsenide quantum well at low temperature.

63 lets in an electron-hole plasma created in a gallium arsenide quantum well by ultrashort optical puls

64 of a few hundred manganese ions in a single gallium arsenide quantum well.

65 ect observations of high-order coherences in gallium arsenide quantum wells, achieved using two-dimen

66 trained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spi

67 rol and readout of single manganese spins in gallium arsenide should be possible.

68 an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched t

69 rface smooth, leading to direct reuse of the gallium arsenide substrate.

70 s the separation of III-V device layers from gallium arsenide substrates and has been extensively exp

71 particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of

72 In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and

73 nd sometimes potentially toxic (for example, gallium arsenide) materials.

74 In direct-gap semiconductors such as gallium arsenide, the exciton lifetime is too short for

75 oday, gallium nitride-, silicon-, and indium gallium arsenide--based detectors are used for different

76 weakly spin-orbit-coupled materials such as gallium arsenide.

77 x-ray scattering (TRXS) on bulk crystalline gallium arsenide.

78 iple Bragg reflections in laser-excited bulk gallium arsenide.

79 The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform

80 A diode laser (aluminum-gallium-arsenide, 660 nm) was applied to test sites imme

81 The gallium aryloxide polymer, [[((t)Bu)(2)Ga](2)(mu-OC(6)H(

82 evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface.

83 omposite emissive layer, and eutectic indium-gallium as the cathode.

84 nd follow-up of lymphomas, largely replacing gallium as the nuclear medicine study of choice.

85 We used nontoxic eutectic gallium-based alloys as a reaction solvent and co-alloye

86 sition system targets and recent research on gallium-based anti-infectives.

87 ased during the late 1990s, bringing several gallium-based clinical trials to a halt.

88 orum sensing inhibitors, biofilm disruptors, gallium-based drugs, cyclodextrin inhibitors of pore-for

89 al affinity chromatography (SIMAC) employing gallium-based immobilized metal affinity chromatography

90 Optimized geometries of known aluminum and gallium-bridged [1]ferrocenophanes (Al(Pytsi) (6a), Ga(P

91 As for the gallium-catalyzed Friedel-Crafts alkylation, an unusual

92 In the case of the gallium-catalyzed hydroarylation of arenynes, the esters

93 ecting (i) effective steric shielding of the gallium center by the ancillary phosphine and Cp* ligand

94 Copper, indium, and gallium chalcogenide nanocrystals (binary, ternary, and

95 rent NOTA-modified somatropins as well as to gallium chelated NOTA-functionalities (Ga-10:1 NOTA-soma

96 :C{N(2,6-(i)Pr(2)C(6)H(3))CH}(2)] (1), with gallium chloride in a 1:4 ratio in toluene affords the d

97 simple gallium siderophore complexes such as gallium citrate have shown good antibacterial activities

98 The most studied complex has been gallium citrate, which exhibits broad activity against m

99 a41 prefer architectures with vertex-sharing gallium clusters, whereas electron-rich compounds, like

100 preliminary generation of a key 1,2-dipolar gallium complex and its subsequent participation in annu

101 We report a nickel-gallium complex featuring a Ni(0)-->Ga(III) bond that sh

102 rocess of this type catalyzed by a molecular gallium complex.

103 We tested five gallium complexes (1-5) in which the gallium ion is boun

104 hat the proteasome is a molecular target for gallium complexes in a variety of prostate cancer cell l

105 These gallium complexes represent a new class of anti-infectiv

106 ungi, researchers have begun to evaluate new gallium complexes to target key pathogens.

107 Our results strongly suggest that gallium complexes, acting as potent proteasome inhibitor

108 that the bonding requirements of diamagnetic gallium control the electronic behavior within the perov

109 Ar#, 9; Ar', 10) that featured almost linear gallium coordination, Ga-B distances near the sum of the

110 We conclude that carboxylated gallium corroles are promising chemotherapeutics with th

111 ing revealed facile uptake of functionalized gallium corroles by all human cancer cells that followed

112 >> 3 > 2 >> 1 (intracellular accumulation of gallium corroles was fastest in melanoma cells).

113 m demand derived from a dynamic model of the gallium cycle.

114 num cycle, and compare it with scenarios for gallium demand derived from a dynamic model of the galli

115 el use of a metallo-complex, desferrioxamine-gallium (DFO-Ga) that targets P. aeruginosa iron metabol

116 The aluminum and gallium dichlorides (Mamx)ECl(2)1a (E = Al; 82%) and 1b

117 2)M (M = Fe, Ru) and respective aluminum and gallium dihydrides.

118 e is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has

119 The gallium distribution pattern in tumor and liver tissue r

120 tissue samples from mice treated with 1, the gallium distribution pattern was analyzed and compared t

121 of mononuclear cationic complexes containing gallium donor ligands.

122 We present a new colloidal synthesis of gallium-doped zinc oxide nanocrystals that are transpare

123 (68)Gallium-DOTATATE positron emission tomography with compu

124 and uniquely defined the binding pocket for gallium enterobactin (GaEnt).

125 ndwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on voltage and

126 Gallium exhibits highly reversible and switchable adhesi

127 M. Sitti and co-workers find that gallium exhibits highly reversible and switchable adhesi

128 , y = 0-4.0) has been isolated from a molten gallium flux reaction.

129 n a transmission electron microscope grid by gallium focused-ion-beam milling.

130 The use of liquid metals based on gallium for soft and stretchable electronics is discusse

131 ghtly focussed beam of energetic ions, often gallium (Ga(+)), FIB can sculpt nanostructures via local

132 in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T >/=

133 Although gallium (Ga) is a rare element, it is widely used in sem

134 We report a facile colloidal synthesis of gallium (Ga) nanoparticles with the mean size tunable in

135 development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin

136 Gallium (Ga), a group III metal, is of fundamental inter

137 TMP (the base) and tris(trimethylsilylmethyl)gallium [Ga(CH2 SiMe3 )3 , GaR3 ] (the trap) that, opera

138 iCl(4) in propylene carbonate using a liquid gallium [Ga(l)] pool as the working electrode consistent

139 n the canonical frustrated magnet gadolinium gallium garnet (Gd3Ga5O12).

140 -thick Ce:YIG films were grown on Gadolinium Gallium Garnet substrates with (100), (110) and (111) or

141 absorption edges of gadolinium in gadolinium gallium garnet, which mark the onset of excitations from

142 The erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser has been widely used i

143 cently the erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser.

144 Gallium has been labeled as a critical metal due to rapi

145 ed under physiological conditions, therefore gallium has the potential to serve as an iron analog, an

146 In contrast to Hg, liquid metals based on gallium have low toxicity and essentially no vapor press

147 eneration of complexes containing indium(i), gallium(i), germanium(ii), and even silicon(ii).

148 Tris(8-quinolinolato)gallium(III) (1, KP46) is a very promising investigation

149 Gallium(III) and subsequently developed gallium(III)-con

150 e performed to characterize a nonmetabolized gallium(III) complex, gallium(III)-(bis(3-ethoxy-2-hydro

151 The sulfonated gallium(III) corrole functions both for tumor detection

152 Sulfonated gallium(III) corroles are intensely fluorescent macrocyc

153 Isothermal titration calorimetry of a gallium(III) derivative of NP4 demonstrates that the hem

154 Gallium(III) is structurally similar to iron(III), excep

155 We report derivatives of gallium(III) tris(pentafluorophenyl)corrole, 1 [Ga(tpfc)

156 erize a nonmetabolized gallium(III) complex, gallium(III)-(bis(3-ethoxy-2-hydroxy-benzylidene)-N,N'-b

157 Gallium(III) and subsequently developed gallium(III)-containing complexes have shown promising a

158 the thin oxide layer that forms on eutectic gallium indium (EGaIn) in a controlled reproducible mann

159 bules filled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple ro

160 utive clusters differ by the addition of one gallium (indium) atom.

161 t thermally robust monomeric MX2 radicals of gallium, indium and thallium.

162 ive-valence-electron bis(boryl) complexes of gallium, indium, and thallium undergo oxidative M-C bond

163 Among others, specialty metals (e.g., gallium, indium, and thallium) and some heavy rare earth

164 t the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SA

165 microelectronics composed of a liquid-phase Gallium-Indium alloy with micron-scale circuit features

166 e-stripped silver substrate; EGaIn: eutectic gallium-indium alloy) which shows reproducible rectifica

167 al" functional groups, and EGaIn is eutectic gallium-indium alloy.

168 nosphere composed of a liquid-phase eutectic gallium-indium core and a thiolated polymeric shell.

169 -doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact.

170 rupturing adjacent microcapsules containing gallium-indium liquid metal (top).

171 ce method to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces criticall

172 he bottom-electrode, and a eutectic alloy of gallium-indium was used as the top-electrode.

173 quartz nanopipette tip immersed in a liquid gallium/indium alloy electrode, which not only protects

174 Significantly, gallium-induced toxicity was specific only to E. coli ex

175 However, the gallium industry may need to introduce ambitious recycli

176 ered, since blockade of the siderophore with gallium inhibits the rescue from ischemia.

177 examined as was the influence of the primary gallium ion (Ga(+)) flux on the efficiency of these proc

178 electron microscope equipped with a focused gallium ion beam, used to sequentially mill away the sam

179 ed five gallium complexes (1-5) in which the gallium ion is bound to an NN'O asymmetrical ligand cont

180 nstrument equipped with an X-ray detector, a gallium-ion beam mills the particle, while the electron

181 An oral formulation of gallium is also in development.

182 While demand for gallium is expected to rise in the future, our results i

183 The robustness of gallium is notable as it exhibits strong performance on

184 With current applications, a shortage of gallium is unlikely by 2050.

185 Receptor-specific binding of gallium-labeled HZ220 was characterized in PC-3 prostate

186 Gallium lanthanum sulfide glass (GLS) has been widely st

187 ine the in vitro antimicrobial activities of gallium maltolate (GaM) and 20 other antimicrobial agent

188 Gallium may therefore find numerous applications in tran

189 Gallium nanoparticles (GaNPs) of different sizes are dep

190 Size-controlled gallium nanoparticles deposited on sapphire were explore

191 Thermal decomposition of zinc stearate and gallium nitrate after hot injection of the precursors in

192 ine of the basic and clinical information on gallium nitrate as an antineoplastic agent.

193 However, pharmaceutical production of gallium nitrate ceased during the late 1990s, bringing s

194 s have recently been conducted to reevaluate gallium nitrate for the treatment of lymphoma.

195 lthough early clinical trials indicated that gallium nitrate had activity against lymphoma and bladde

196 Gallium nitrate has demonstrated activity against lympho

197 Gallium nitrate has recently become commercially availab

198 An important property of gallium nitrate is that it is not myelosuppressive and i

199 Simple gallium salts such as gallium nitrate, maltolate, and simple gallium sideropho

200 Gallium nitride (GaN) and its solid solutions are excell

201 num nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid s

202 Room-temperature quantum emitters in gallium nitride (GaN) are reported.

203 f highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly latt

204 f-heating is a severe problem for high-power gallium nitride (GaN) electronic and optoelectronic devi

205 Gallium nitride (GaN) is a wide-bandgap semiconductor of

206 ht-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact wh

207 odes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires.

208 Flexible gallium nitride (GaN) thin films can enable future strai

209 Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a migration-enhanced encapsula

210 bological (friction and wear) performance of gallium nitride (GaN), through experiments and theory.

211 Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells o

212 Gallium nitride cradle-to-gate energy requirements are e

213 n now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to the

214 Gallium nitride materials containing indium gallium nitr

215 re we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumul

216 growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and ph

217 Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO si

218 ngle-crystalline silicon, silicon carbide or gallium nitride p-n junction photodiodes.

219 Finally, our single-crystal gallium nitride samples have a trigonal cross-section de

220 Although the performance of gallium nitride ultraviolet lasers has improved signific

221 erials include silicon, gallium arsenide and gallium nitride, co-integrated with metals, metal oxides

222 al micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separa

223 Silicon carbide and gallium nitride, two leading wide band gap semiconductor

224 on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% abso

225 Today, gallium nitride-, silicon-, and indium gallium arsenide-

226 y smooth {111} calcium oxide films on (0001) gallium nitride.

227 owire and a tip-applied KOH "ink" to produce gallium nitride/gallium oxide heterostructures.

228 Gallium-nitride-based light-emitting diodes have enabled

229 de derivative Ar' 'NGaN(SiMe(3))Ar' ' (9), a gallium nitrogen analogue of an allyl anion.

230 ed with the phosphate coordinating metal ion gallium on microspheres.

231 computed tomography and functional imaging (gallium or fluorodeoxyglucose-positron emission tomograp

232 These chelated gallium or zinc complexes act as iron siderophore analog

233 Gallium orthophosphate (GaPO4) is an alternative piezoel

234 nhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer.

235 droxide (GaOOH) and the defect spinel, gamma-gallium oxide (gamma-Ga(2)O(3)).

236 m and indium (EGaIn), covered with a skin of gallium oxide (presumably Ga(2)O(3)), formed electrical

237 e examine the structural evolution of indium gallium oxide gel-derived powders and thin films using i

238 In particular, indium gallium oxide has garnered attention as a thin-film tran

239 applied KOH "ink" to produce gallium nitride/gallium oxide heterostructures.

240 the two-dimensionally connected tetrahedral gallium oxide network in the melilite structure La(1.54)

241 zole) agents to catalyze the hydrolysis of a gallium oxide precursor and template the condensed produ

242 al-oxide semiconductors (In2O3 and an indium-gallium oxide).

243 hermore, after selective chemical etching of gallium oxide, unique diameter-modulated nanowire struct

244 r and template the condensed product to form gallium oxohydroxide (GaOOH) and the defect spinel, gamm

245 value, consistent with the hypothesis that a gallium oxynitride capping layer had been formed on the

246 ium resembles the atomic arrangement of both gallium phase II and III (the high pressure crystalline

247 s silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them ef

248 re, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1-2 at% a

249 n chemistry of vinylpyridine to p-type (100) gallium phosphide (GaP).

250 active index and low absorption coefficient, gallium phosphide is an ideal material for photonic stru

251 During growth of gallium phosphide nanowires at typical V/III ratios, we

252 we report the fabrication of single crystal gallium phosphide thin films on transparent glass substr

253 ing the largest 18-membered-ring channels in gallium phosphites, denoted as NTHU-15, which displayed

254 d convection experiments in the liquid metal gallium (Pr = 0.025) over a range of nondimensional buoy

255 c functionality catalyzing the hydrolysis of gallium precursors.

256 we present the design and synthesis of novel gallium-radiolabeled small-molecule sulfonamides targeti

257 nt result that the local structure of liquid gallium resembles the atomic arrangement of both gallium

258 lar trafficking pathways may be important in gallium resistance.

259 Gallium's mechanisms of action include its binding to tr

260 Gallium's resilience following oxidation is inherently a

261 ually any complex that binds Fe(III), simple gallium salts as well as more complex siderophores and h

262 Simple gallium salts such as gallium nitrate, maltolate, and si

263 The molecular structure of gallium schizokinen, GaSz, was determined by combined (1

264 more sensitive and specific than either (67)gallium scintigraphy or computerized tomography, providi

265 lium ions are transported to the interior of gallium-seamed pyrogallol[4]arene nanocapsules.

266 mmon thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in

267 er indium sulfide (CuInS2) and copper indium gallium selenide (Cu(InxGa(1-x))-Se2; CIGS) nanocrystals

268 The four polymorphs of layered gallium selenide (GaSe) crystals that result from differ

269 Gallium selenide (GaSe) is a layered semiconductor and a

270 otovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter

271 anes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leachates und

272 ch as gallium nitrate, maltolate, and simple gallium siderophore complexes such as gallium citrate ha

273 uminum saturate or decline, a shift to other gallium sources such as zinc or coal fly ash may be requ

274 Compound 8 is also the first one-coordinate gallium species to be characterized in the solid state.

275 p-xylene selectivity increased from 51% with gallium spray-dried ZSM-5 to 72% with a pore-mouth-modif

276 FT), that the recent experimentally realized gallium sulfide nanoribbons (GaSNRs) can display an intr

277 chains or of honeycomb-type layers, in which gallium-sulfide supertetrahedral clusters and dipyridyl

278 We found that the gallium supply potential is heavily influenced by the de

279 nt a description of the global anthropogenic gallium system and quantify the system using a combinati

280 a photocleavable magnetic nanoparticle-based gallium tag for tagging and enrichment as well as UV-rel

281 layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapo

282 In the case of liquid gallium, the oxide skin attaches exclusively to a substr

283 rse" strategy that uses the transition metal gallium to disrupt bacterial Fe metabolism and exploit t

284 ds antimony pentafluoride and pentachloride, gallium trichloride, titanium and zirconium tetrachlorid

285 a combination of a triazole gold complex and gallium triflate.

286 e 13 and 14 supplies two electrons to the di-gallium unit to generate a single bond (in addition to t

287 o characterize the local structure of liquid gallium up to 1.9 GPa.

288 we determine the global supply potential for gallium up to 2050 based on scenarios for the global alu

289 ttributed to the higher electronegativity of gallium versus aluminum.

290 the interfacial tension of a liquid alloy of gallium via electrochemical deposition (or removal) of t

291 We estimated that gallium was produced from 8 to 21% of alumina plants in

292 ering internal diameters of the two types of gallium wheels, single-file diffusion occurs in the Ga(1

293 ect; antimony catalyzes the incorporation of gallium, which is found in high concentration at the jun

294 ious research, the local structure of liquid gallium within this domain was suggested a mixture of tw

295 gle-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

296 re Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible pla

297 Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the

298 of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve larg

299 of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers hig

300 nsor structure consisting of an IGZO (Indium-Gallium-Zinc-Oxide) TFT (thin film transistor) and an ex