ライフサイエンスコーパス: gallium arsenide

1 technologically important materials (such as gallium arsenide).

2 weakly spin-orbit-coupled materials such as gallium arsenide.

3 ifferent semiconductor surfaces: silicon and gallium arsenide.

4 ic fields experienced by electrons in n-type gallium arsenide.

5 x-ray scattering (TRXS) on bulk crystalline gallium arsenide.

6 iple Bragg reflections in laser-excited bulk gallium arsenide.

7 sition charged arsenic (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic pre

8 A diode laser (aluminum-gallium-arsenide, 660 nm) was applied to test sites imme

9 tunnel conductance that was fabricated in a gallium arsenide-aluminum gallium arsenide heterostructu

10 ve the two-dimensional electron gas inside a gallium arsenide/aluminum gallium arsenide nanostructure

11 The semiconductor materials include silicon, gallium arsenide and gallium nitride, co-integrated with

12 ctor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide.

13 temporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial l

14 Measurements of unstrained gallium arsenide and strained indium gallium arsenide sa

15 Single electron spins in gallium arsenide are a leading candidate among implement

16 oday, gallium nitride-, silicon-, and indium gallium arsenide--based detectors are used for different

17 rical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devic

18 gh-purity two-dimensional electron fluids in gallium arsenide devices.

19 mics in strained gallium arsenide and indium gallium arsenide epitaxial layers.

20 Gallium arsenide (GaAs) is a semiconductor utilized in t

21 Here we image gallium arsenide (GaAs) nanowires during growth as they

22 Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon

23 ation spectrum of a single, naturally formed gallium arsenide (GaAs) quantum dot have been measured w

24 dy correlations among electrons and holes in gallium arsenide (GaAs) quantum wells.

25 We present data from an induced gallium arsenide (GaAs) quantum wire that exhibits an ad

26 abrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technolo

27 t ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory

28 lthough semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) hav

29 For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in th

30 The compound semiconductor gallium-arsenide (GaAs) provides an ultra-clean platform

31 A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in

32 On flat gallium arsenide [GaAs(110)] terraces, the injection eff

33 ) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectr

34 as fabricated in a gallium arsenide-aluminum gallium arsenide heterostructure.

35 igh-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of hig

36 , limited by hyperfine interactions with the gallium arsenide host nuclei.

37 High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of

38 The lattice matched Indium Gallium Arsenide (In0.53Ga0.47As) is identified as a bet

39 al gadolinium oxide dielectric thin films on gallium arsenide is reported.

40 nd sometimes potentially toxic (for example, gallium arsenide) materials.

41 layers were observed in the gadolinium oxide-gallium arsenide metal oxide semiconductor diodes, using

42 Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireles

43 materials of high refractive index (such as gallium arsenide, n = 3.69), which unfortunately leads t

44 able metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type reson

45 ctron gas inside a gallium arsenide/aluminum gallium arsenide nanostructure allows the coherent elect

46 dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparti

47 operties of silicon carbide nanoclusters and gallium arsenide nanowires.

48 and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates.

49 erent nonlinear optical response in a single gallium arsenide quantum dot.

50 , consistent with coupling rates obtained in gallium arsenide quantum dots.

51 ole and light-hole excitonic resonances in a gallium arsenide quantum well at low temperature.

52 lets in an electron-hole plasma created in a gallium arsenide quantum well by ultrashort optical puls

53 ant-density two-dimensional hole system in a gallium arsenide quantum well revealed that the metallic

54 of a few hundred manganese ions in a single gallium arsenide quantum well.

55 rations of spin of electron double layers in gallium arsenide quantum wells at even-integer quantum H

56 ect observations of high-order coherences in gallium arsenide quantum wells, achieved using two-dimen

57 trained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spi

58 rent electron spin dynamics in a neighboring gallium arsenide semiconductor.

59 rol and readout of single manganese spins in gallium arsenide should be possible.

60 an elegant cut pattern is made in thin-film gallium arsenide solar cells, which are then stretched t

61 rface smooth, leading to direct reuse of the gallium arsenide substrate.

62 s the separation of III-V device layers from gallium arsenide substrates and has been extensively exp

63 (110)-oriented in single domain on the (100) gallium arsenide surface.

64 particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of

65 In direct-gap semiconductors such as gallium arsenide, the exciton lifetime is too short for

66 In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and

67 y to grow thin single-crystal oxide films on gallium arsenide with a low interfacial density of state