ライフサイエンスコーパス: germanium

1 nits are held coplanar by a bridging dialkyl germanium.

2 metal rings and covered with a thin film of germanium.

3 to investigating the high-mobility material germanium.

4 es were almost exclusively manufactured from germanium.

5 y high amplification noise characteristic of germanium.

6 successful vitrification of metallic liquid germanium.

7 native mechanisms for the nucleosynthesis of germanium.

8 e films on non-insulating substrates such as germanium.

9 lms on sapphire, silicon dioxide/silicon and germanium.

10 rnative method for protein immobilization on germanium.

11 horus lone pair into the vacant p-orbital at germanium.

12 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the pre

13 The radioactivity concentration on germanium 68 (68Ge)-based corrected images was regarded

14 minescent dosimetry was used to evaluate the germanium 68/gallium 68 rod sources.

15 Intrinsically germanium-69-labeled super-paramagnetic iron oxide nanop

16 ns on any of the 5 sets of images (PET using germanium AC [GeAC] fused and not fused with CT, PET usi

17 2D IR spectra by using a computer-controlled germanium acoustooptic modulator that overcomes the abov

18 sing an atomically-thin layer of graphene on germanium, after two simple processing steps, we create

19 Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are

20 rical fields on the nanometre scale within a germanium amplification layer can overcome the otherwise

21 Co-oligomerization of 1 and its germanium analogue gives a related tetrameric product 4

22 anic structure directing agents (OSDAs) with germanium and boron atoms in alkaline media has allowed

23 Germanium and compound semiconductors, on the other hand

24 or synthesizing atomically discrete wires of germanium and present the first conductance measurements

25 Our findings show that germanium and silicon wires are nearly identical in cond

26 guest-free clathrates has only been found in germanium and silicon, although guest-free hydrate clath

27 howed that bond strength differences between germanium and tin, as well as greater nonbonded electron

28 for attachment to surfaces such as silicon, germanium, and gold.

29 Silicon, germanium, and related alloys, which provide the leading

30 nucleation in supercooled liquid silicon and germanium, and we illustrate the crucial role of free su

31 Trifluorinated germanium anions attracted attention of theoretical chem

32 tion during the crystallization of amorphous germanium antimony telluride (Ge2Sb2Te5).

33 Heterostructures that consist of a germanium antimony telluride matrix and cobalt germanide

34 cations of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited

35 oys of group IV elements such as silicon and germanium are attractive candidates for use as anodes in

36 reaction, and results comparing silicon and germanium are discussed.

37 ites via introduction of boron, aluminum, or germanium as substituting tetrahedral framework atoms fo

38 By using highly doped germanium as the source and atomically thin molybdenum d

39 Such materials include silicon and germanium at very low temperature (<100 K) and, at room

40 on between the lone pair of electrons on the germanium atom and the C-N pi* orbital of the isocyanide

41 e first isolable Ge(0) complex with a single germanium atom stabilized by a dicarbene.

42 d tetrameric product 4 containing low-valent germanium atom stabilized by binding with the partial ca

43 nning tunneling microscopy, it is shown that germanium atoms adsorbed on the (100) surface of silicon

44 a simple and efficient method for replacing germanium atoms in deltahedral Ge(9)(4-) clusters with S

45 that silicon can be successfully replaced by germanium atoms in the synthesis of imogolite nanotubes,

46 A hemispherical germanium ATR element used with p-polarized light at 65

47 Although germanium avalanche photodetectors (APD) using charge am

48 uantitative differences between CT-based and germanium-based attenuation-corrected PET images.

49 tration values significantly higher than the germanium-based corrected values.

50 on intensity in the mesoporous intermetallic germanium-based frameworks can be selectively suppressed

51 a review of the current state-of-the-art in germanium-based materials design, synthesis, processing,

52 We synthesize carbon-, silicon-, and germanium-based molecular wires terminated by aurophilic

53 Germanium-based nanomaterials have emerged as important

54 actant-directed assembly of mesoporous metal/germanium-based semiconducting materials from coupling o

55 Germanium-based transistors have the potential to operat

56 egions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather tha

57 in the silicon photonic process are based on germanium, but this requires additional germanium growth

58 embly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D)

59 ion exhibits a pentagonal prismatic 10-atom germanium cage with an interstitial iron atom in the cen

60 The amplified material gain in strained germanium can sufficiently overcome optical losses at 83

61 lly relevant semiconductor surfaces, such as germanium, carbon, and others.

62 The two-coordinate germanium cation [(IDipp){(Me3Si)2CH}Ge:](+) has been sy

63 hile in the case of cyclic 6b the low-valent germanium center requires a considerable thermal activat

64 ly periodic hexagonal honeycombs of platinum-germanium chalcogenide and platinum-tin selenide framewo

65 pounds, emphasizing technologically relevant germanium chalcogenides that include GeS, GeSe, and GeTe

66 A new series of germanium chalcophosphates with the formula A(4)GeP(4)Q(

67 r assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemica

68 ene were obtained by reduction of the parent germanium chlorides with NaBH(4) and LiBH(4), respective

69 of Pd(PPh3 ) into the tetrasubstituted nona-germanium cluster [(Me3 Si)Si]3 EtGe9 through a reaction

70 tures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 </= n </= 12.

71 tal and theoretical study of ruthenium doped germanium clusters, RuGen(-) (n = 3-12), and their corre

72 city is another way to stabilize silicon and germanium clusters.

73 and electronic structures of ruthenium doped germanium clusters.

74 and electronic properties of ruthenium doped germanium clusters.

75 The germanium complex of the more electron-withdrawing tetra

76 rent morphologies, the first being a silicon-germanium compositionally segregated Janus particle orie

77 we discuss the colloidal synthesis of other germanium-containing compounds, emphasizing technologica

78 alogues with amido substituents, and heavier germanium-containing systems Ge4R4 (potential precursors

79 and-offsets drive hole injection into either germanium core or shell regions.

80 Here we synthesize silicon and germanium core-shell and multishell nanowire heterostruc

81 of crystalline germanium-silicon and silicon-germanium core-shell structures, in which band-offsets d

82 ues are generally comparable between CT- and germanium-corrected emission PET images, CT-based attenu

83 er radioactive concentration values than did germanium-corrected images (P < 0.01) for all lesions an

84 5.2% higher for CT-corrected images than for germanium-corrected images.

85 dies using a custom-designed impactor with a germanium crystal as the impaction surface to study SOA

86 Here we use very small germanium crystals as a new type of nanomechanical stres

87 Its two Ge9-halves are the first examples of germanium deltahedra with three nonsilyl substituents, t

88 Germanium dioxide in the presence of 5% KOH reacted with

89 s about an order of magnitude higher for the germanium dioxide.

90 ace was used to deposit DOM fractions onto a germanium disk that were then analyzed by FTIR.

91 based on bilayer n-MoS2 and heavily doped p-germanium, etc.

92 Germanium fits these requirements and has been proposed

93 sent a universal immobilization technique on germanium for all oligo-histidine-tagged proteins.

94 ty of functionalization against oxidation of germanium for various alkyl chain lengths is elucidated

95 ifically, we examined the use of high-purity germanium gamma spectrometry and isotope dilution alpha

96 interfacial resistance by depositing a thin germanium (Ge) (20 nm) layer on garnet.

97 Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention

98 We examined the evolution of a germanium (Ge) nanowire attached to a gold (Au) nanocrys

99 ctrically active dopants in silicon (Si) and germanium (Ge) nanowires (NWs) prepared by nanocluster c

100 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has bee

101 In this work, Mg was microalloyed with germanium (Ge), with the aim of improving corrosion resi

102 A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 de

103 We apply it to germanium, gold and magnesium oxide particles, and achie

104 versality of this effect, including silicon, germanium, gold, glasses, silk, polystyrene, biodegradab

105 d on germanium, but this requires additional germanium growth, which increases the system cost.

106 y of a series of lead-free and mixed tin and germanium halide perovskite materials.

107 Although other Group-14 elements silicon and germanium have complementary crystalline and amorphous f

108 on of alpha-halo carbonyl compounds by these germanium hydrides occurs with moderate ee values (up to

109 We also show that the germanium hydrides, Et(3)GeH and Bu(3)GeH, also reduce D

110 primary alkyl radical were measured for both germanium hydrides.

111 ed, monodisperse (3.3 nm diameter), aluminum-germanium-hydroxide ("aluminogermanate") nanotubes in aq

112 s of heavier low-valent group 14 elements of germanium(II) and tin(II) by using the substituted Schif

113 That is, the bulky, two-coordinate germanium(II) and tin(II) hydride complexes, L(dagger)(H

114 complexes containing indium(i), gallium(i), germanium(ii), and even silicon(ii).

115 ent-copper in brake pads, zinc in tires, and germanium in retained catalyst applications being exampl

116 e second being a sphere made of dendrites of germanium in silicon.

117 minor metals systems: rhenium, gallium, and germanium in the United States in 2012.

118 Economic introduction of germanium into this linker is accomplished by insertion

119 thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extr

120 Diamond-cubic germanium is a well-known semiconductor, although other

121 Germanium is an extremely important material used for nu

122 strength are particularly surprising because germanium is an indirect gap semiconductor; such semicon

123 or SiO(2); however, the rate of reaction for germanium is much higher than that of the corresponding

124 c fields, the region of impact ionization in germanium is reduced to just 30 nm, allowing the device

125 Germanium is routinely integrated with silicon in electr

126 h refractive index and broad spectral window germanium is the best material for ATR-FT-IR spectroscop

127 and CT on PET/CT studies when CT instead of germanium is used for attenuation correction (AC).

128 terials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledg

129 nstrate the lateral growth of single crystal germanium islands tens of micrometres in diameter by see

130 shed by insertion of dichlorogermylene [from germanium(IV) chloride] into the homobenzylic C-Cl bond

131 w tri-N-methylpyridyl corrole (TMPC) and its germanium(IV) derivative (GeTMPC), with single- and doub

132 of 4(*) with GeCl2.dioxane gives an anionic germanium(IV)-bis(dithiolene) complex (5).

133 w excess noise has been demonstrated using a germanium layer only for detection of light signals, wit

134 micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes.

135 ectroscopy in the extreme ultraviolet at the germanium M4,5 edge.

136 ert-butyl isocyanide on the (100) surface of germanium, measured using Fourier transform infrared spe

137 ere, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and si

138 oidal synthesis of size and shape-controlled germanium nanomaterials.

139 Germanium nanoparticles have excited scientists and engi

140 lity from core-shell structure consisting of germanium nanorods embedded in multiwall carbon nanotube

141 We also show that the strain in the germanium nanostructures can be tuned to 5.3% by alterin

142 y shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs w

143 reveals a 3.8% biaxial tensile strain in the germanium nanostructures.

144 s is illustrated with a series of individual germanium nanowire photodetectors.

145 shold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain

146 Germanium nanowires (GeNWs) with p- and n-dopants were s

147 s of micrometres in diameter by seeding from germanium nanowires grown on a silicon substrate.

148 paid to the unique structural properties of germanium nanowires obtained by epitaxial and heteroepit

149 lso include a case study of gold contacts to germanium nanowires to illustrate these concepts.

150 report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition withou

151 tities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9

152 2)O(5), Cu(2)O, NiO, Fe(2)O(3)), silicon and germanium nanowires, and group III-V or II-VI based 1D s

153 Germanium nanowires, ranging from 10 to 150 nm in diamet

154 ) low-resistivity (10(-4)Omega .cm) metallic germanium of precisely defined thickness, beyond the cap

155 es, despite the fact that the integration of germanium on silicon is attractive for device applicatio

156 High quality single crystal silicon-germanium-on-insulator has the potential to facilitate t

157 brication of multiple single crystal silicon-germanium-on-insulator layers of different compositions,

158 we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant com

159 Chemical vapor deposition of germanium onto the silicon (001) surface at atmospheric

160 Here six crystalline high-germanium or high-tin zeolite-type sulfides and selenide

161 of this compound where tin is substituted by germanium or silicon and find that the latter may achiev

162 In indirect-gap semiconductors such as germanium or silicon, a thermodynamic phase transition m

163 culations show that alkaline-earth-metal and germanium orbitals, particularly the d orbitals on the c

164 Among the various Discovery bismuth germanium oxide-based PET/CT scanners, the IQ with 5-rin

165 racterization of the title anion which has a germanium/palladium cluster core of [Ge18Pd3] and six tr

166 We first produce an array of silicon-germanium particles embedded in silica, through capillar

167 Reaction of 1 with an excess of N(2)O gave a germanium peroxo species Ar'(HO)Ge(mu2-O)(mu2:eta2-O2)Ge

168 phase matching of the nonlinear crystal Zinc Germanium Phosphide (ZGP) in a narrowband-pumped optical

169 have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides.

170 A germanium photodetector that can be monolithically integ

171 This semiconductive mesoporous form of germanium possesses hexagonal pore ordering with very hi

172 ry of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon.

173 be a novel kind of porous materials based on germanium-rich chalcogenide networks and 'soft' highly p

174 Both CT and germanium scans were used to correct PET emission data.

175 However, silicon and germanium segregate unevenly during non-equilibrium soli

176 e demonstrated the synthesis of a mesoporous germanium semiconductor using liquid-crystals-templated

177 Silicon-germanium (Si(1-x)Ge(x)) has become a material of great

178 compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires

179 cattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have v

180 controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphi

181 ity of heteroepitaxial growth of crystalline germanium-silicon and silicon-germanium core-shell struc

182 from pyramids to domes during the growth of germanium-silicon islands on silicon (001).

183 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostru

184 y n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) fie

185 distinct signatures of the two processes in germanium/silicon ratios.

186 sion hole-doped regions within a silicon (or germanium) single crystal.

187 d by the partial occupation of aluminum on a germanium site.

188 of next-generation environmentally friendly germanium solar cells, and near-to-mid infrared (1.8-2.0

189 engthening of the Ge-Ge bonds in the case of germanium species 3 and 4 and a greater lengthening (ca.

190 ough of 62Zn was undetectable by high-purity germanium spectroscopy for all units.

191 In silicon and silicon-germanium, strain provides a mechanism for control of bo

192 silicon in electronics, but previous silicon-germanium structures have also not shown strong modulati

193 um sulfide solutions leads to a thick glassy germanium sulfide layer.

194 th's surface, the semiconductors silicon and germanium superconduct.

195 Here, the germanium surface was functionalized with thiols and ste

196 The reactivity of silicon and germanium surfaces modified with ethylamine (CH(3)CH(2)N

197 Germanium telluride (GeTe) is both polar and metallic, a

198 of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved

199 Germanium Tin (GeSn) films have drawn great interest for

200 Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexi

201 s with double and triple bonds with silicon, germanium, tin and lead had considerable impact on moder

202 compounds of silylene 1 and for its heavier germanium, tin, and lead homologues uniformly electronic

203 carbon's heavier-element congeners silicon, germanium, tin, or lead has been little explored.

204 h-silica-zeolite-like chalcogenides based on germanium/tin remained unknown, even after decades of re

205 We propose that germanium undergoes amorphization above a threshold stre

206 first conductance measurements of molecular germanium using a scanning tunneling microscope-based br

207 lters are transferred to polished silicon or germanium wafers with electrostatically assisted high-sp

208 gy for the attachment of triethoxysilanes on germanium was established, and the surface was character

209 d million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructu

210 Highly strained germanium with its fundamentally altered bandstructure h

211 actions of nine-atom deltahedral clusters of germanium with Ni(COD)2 and/or Ni(PPh3)2(CO)2 in ethylen

212 actions of nine-atom deltahedral clusters of germanium (Zintl ions, Ge(9)(n-)) with alkynes and alkyl