ライフサイエンスコーパス: heterostructure

1 low-energy states in a type-II 2D InSe/GaAs heterostructure.

2 pended ferromagnetic/piezoelectric thin-film heterostructure.

3 in a short exciton lifetime in the MoS2 /GaN heterostructure.

4 ncorporated in a gated TiN/SiO2/Ag plasmonic heterostructure.

5 tween layers of a two-dimensional MoSe2-WSe2 heterostructure.

6 unction of layer thickness than in a regular heterostructure.

7 rred at the interfacial regions of a lateral heterostructure.

8 r using strain in an artificial multiferroic heterostructure.

9 a negative capacitance when integrated in a heterostructure.

10 mperatures, when compared to a permalloy/CoO heterostructure.

11 two-dimensional electron gas in GaAs-AlGaAs heterostructures.

12 s in graphene and van der Waals crystals and heterostructures.

13 nic devices on textile with fully printed 2D heterostructures.

14 carboxyphenyl)benzene to form supramolecular heterostructures.

15 c hystereses of magnetic materials and their heterostructures.

16 structures and plasmonic metal/semiconductor heterostructures.

17 and opportunities for mixed-dimensional vdW heterostructures.

18 stinct 2D materials into van der Waals (vdW) heterostructures.

19 AB-stacked bilayers or stacked van der Waals heterostructures.

20 conductors opens up a new realm for creating heterostructures.

21 late the magnetic properties in multiferroic heterostructures.

22 terials allow single atomic layer control of heterostructures.

23 e development of applications based on their heterostructures.

24 ductivity and the design of novel electronic heterostructures.

25 ctures; and iv) combined strategies to novel heterostructures.

26 ed, and use these predictions to design GaAs heterostructures.

27 cible manufacturing of aligned van der Waals heterostructures.

28 t response ultraviolet sensing in p-Si/n-ZnO heterostructures.

29 llization and electrical properties of these heterostructures.

30 nanolayer/substrate interface tuning in vdW heterostructures.

31 the interlayer interaction in van der Waals heterostructures.

32 ng the carrier transport in graphene-silicon heterostructures.

33 interlayer exchange coupling in metal/oxide heterostructures.

34 tes, followed by in situ growth of films and heterostructures.

35 between lattice and other order parameter in heterostructures.

36 ure skyrmion spintronics in robust thin-film heterostructures.

37 subject especially on magnetic/ferroelectric heterostructures.

38 tionalities that are not accessible in other heterostructures.

39 n atomically controlled epitaxial perovskite heterostructures.

40 er excitons in monolayer WSe2-MoSe2 vertical heterostructures.

41 n high quality and homogeneous van der Waals heterostructures.

42 nd emergent phenomena, as seen in perovskite heterostructures.

43 tal growth comes from the study of inorganic heterostructures.

44 ric fields, but only in special compounds or heterostructures.

45 ena not present in traditional semiconductor heterostructures.

46 bstrate or embedded in complex semiconductor heterostructures.

47 lled preparation of molecular thin films and heterostructures.

48 r optical response of 2D materials and their heterostructures.

49 netoelectric effect is dominant in NiFe/PLZT heterostructures.

50 in bulk STO and ferromagnetism in STO-based heterostructures.

51 ch to the design of switchable van der Waals heterostructures.

52 elopment of III-V/graphene functional hybrid heterostructures.

53 moelectric transport across Au/h-BN/graphene heterostructures.

54 or strain coupled artificial magnetoelectric heterostructures.

55 y graphene nanoribbons in vertically stacked heterostructures.

56 guidance to enable controlled growth of vdW heterostructures.

57 ribution in lattice-mismatched semiconductor heterostructures.

58 bility to control heat flow in van der Waals heterostructures.

59 may also apply to other strongly correlated heterostructures.

60 ster than all the directly grown vertical 2D heterostructures.

61 5(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O heterostructures.

62 based on atomically thin semiconductors and heterostructures.

63 ng a wide range of application-specific nano-heterostructures.

64 tance filaments within metal-insulator-metal heterostructures.

65 tensively as monolayers, vertical or lateral heterostructures.

66 ing microscopy in intercalated van der Waals heterostructures.

67 ples calculations indicate that for nanowire heterostructures a robust one-dimensional electron gas (

68 monstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex o

69 transfer process in the photoexcited type-II heterostructure-a fundamental phenomenon in semiconducto

70 d relative transmission of light through the heterostructures across a wavelength range of 1-12 mum.

71 modulation using conventional semiconductor heterostructures, aggressive device processing is often

72 The heterostructure also exhibits a strain-induced spin-reor

73 The heterostructures also offer enhanced stability revealed

74 2D array on another to form a supramolecular heterostructure and realize the growth-normal to the und

75 leverages the atomically thin MoS2-graphene heterostructure and strain-releasing device designs.

76 ken into account in studies of van der Waals heterostructures and can also be exploited to modify mat

77 the range of interactions in low-dimensional heterostructures and how magnetic proximity effects can

78 ing with collinear CdSe/CdS/CdSe rod/rod/rod heterostructures and spherical CdS (or CdSe/CdS core/she

79 Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the u

80 tudy the vortex confinement in S/F thin film heterostructures and we observe that vortex clusters app

81 renormalization for MoS2 monolayer/graphene heterostructures, and confirm the initial hot-carrier ex

82 miconductor nanoparticles, organic-inorganic heterostructures, and porphyrin-based nanostructures, ha

83 based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some k

84 he progress as to how to design new types of heterostructured anode materials for enhancing LIBs is r

85 By applying different strategies, nanoscale heterostructured anode materials with reduced size, larg

86 stability: i) carbon-nanomaterials-supported heterostructured anode materials; ii) conducting-polymer

87 is achieved, with potential for multiferroic heterostructure applications.

88 Low-dimensional magnetic heterostructures are a key element of spintronics, where

89 r distinct classes of VO2 -TiO2 -VO2 nanorod heterostructures are accessible by modulating the growth

90 profiles near the interface of LaAlO3/SrTiO3 heterostructures are correlated.

91 des with vertically stacked 2D van der Waals heterostructures are employed for making high-performing

92 h-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance inte

93 Semiconductor heterostructures are fundamental building blocks for man

94 The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition

95 hosphorene black phosphorus (BP), hBN/BP/hBN heterostructures are mechanically stacked to devise high

96 Two-dimensional van der Waals heterostructures are of considerable interest for the ne

97 c applications.Two-dimensional van der Waals heterostructures are of interest due to their unique int

98 InGaN/GaN nanowire heterostructures are presented as nanophotonic probes fo

99 Ionic heterostructures are used as a strain-modulated memristi

100 Our work introduces van der Waals heterostructures as a promising platform from which to s

101 mation in PbZr0.2Ti0.8O3/SrRuO3/SrTiO3 (001) heterostructures as the kinetics of the growth process r

102 By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional

103 an be mitigated by considering graphene-MoS2 heterostructure, as graphene possesses strong mechanical

104 for a single-step synthesis of van der Waals heterostructures, as an alternative to artificial stacki

105 l over the growth of two-dimensional lateral heterostructures at such extreme dimensions has proven e

106 lever heater sensors with separate AlGaN/GaN heterostructure based heater and sensor channels to perf

107 Here the authors report an Al@Cu2O heterostructure based on earth abundant materials to tra

108 non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

109 lectronic and orbital structures, artificial heterostructures based on LaNiO3 have inspired a wealth

110 ergy between a series of metal-semiconductor heterostructures based on layered V2 -VI3 nanostructures

111 and control of plasmonic fields in advanced heterostructures based on novel two-dimensional material

112 hysics of two-dimensional (2D) materials and heterostructures based on such crystals has been develop

113 Atomically thin lateral heterostructures based on transition metal dichalcogenid

114 transistors have been integrated on a single heterostructure bilayer.

115 ental properties of STO-based thin films and heterostructures, but expands the utility of pulsed lase

116 ntly a new trend has emerged to develop nano-heterostructures by assembling multiple monolayers of di

117 g the electronic properties of van der Waals heterostructures by controlling the interlayer separatio

118 current generation in graphene/MoS2/graphene heterostructures by creating a device with two distinct

119 h to construct one-dimensional metal/sulfide heterostructures by directly sulfuring highly compositio

120 etching of nanocrystals, nanorods, and their heterostructures by one of the most commonly used metal

121 absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%.

122 The platinum-nickel/nickel sulfide heterostructures can deliver a current density of 37.2 m

123 mprising abundant interfaces, multicomponent heterostructures can integrate distinct building blocks

124 rfaced with 2D materials, or entirely new 3D heterostructures can lead to the next generation multi-f

125 o-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the des

126 Two-dimensional atomic heterostructures combined with metallic nanostructures a

127 eal the sub-45 fs charge transfer at a 2D/0D heterostructure composed of tungsten disulfide monolayer

128 th of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stack

129 Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple

130 decorated one-dimensional Z-scheme TiO2/WO3 heterostructure composite nanofibers have been fabricate

131 act with another through vdW forces, the vdW heterostructure concept can be extended to include the i

132 diated multiferroic heterostructure (e.g., a heterostructure consisting of an amorphous, slightly ell

133 Herein, we report a new heterostructure consisting of CZTS nanoparticles anchore

134 nteger Landau-level filling in van der Waals heterostructures consisting of dual-gated, hexagonal-bor

135 ancy concentration and distribution in oxide heterostructures consisting of electronically conducting

136 tals into arbitrarily and vertically stacked heterostructures, consisting of bis(ethylenedithio)tetra

137 the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled product

138 A double heterostructure design with a symmetric strain profile i

139 ayers achieved by exploiting a van der Waals heterostructure device platform.

140 Novel heterostructure devices--such as tunneling transistors,

141 -dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices.

142 examine how their properties are used in new heterostructure devices.

143 gap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interacti

144 switching in a strain-mediated multiferroic heterostructure (e.g., a heterostructure consisting of a

145 rs has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to fo

146 phe" model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more ra

147 The Au/graphene/h-BN heterostructures enable us to explore thermoelectric and

148 two-dimensional materials into van der Waals heterostructures enables the construction of layered thr

149 ansition metal oxides (TMOs) into artificial heterostructures enables to create electronic interface

150 lectrical heater is patterned on top of this heterostructure, enabling Raman spectroscopy and thermom

151 Atomically sharp oxide heterostructures exhibit a range of novel physical pheno

152 The van der Waals heterostructures exhibit pressure dependent sensitivity

153 By constructing heterostructures exhibiting Neel order in an antiferroma

154 This unique heterostructure exhibits excellent electrochemical perfo

155 The heterostructure exhibits interfacial charge transfer fro

156 In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixing of diff

157 fabricate several large-scale, high-quality heterostructure films and devices, including superlattic

158 ally broaden the tunability of van der Waals heterostructures for a wide range of applications.

159 s represent elementary components of layered heterostructures for emergent technologies beyond conven

160 l for the design and integration of advanced heterostructures for high performance capacitance device

161 s sparked intensive research on multiferroic heterostructures for more than a decade.

162 onstrate the potential of InGaN/GaN nanowire heterostructures for the defined conversion of this anal

163 n titania, hematite, and on alpha-Fe2O3/TiO2 heterostructures, for PEC applications.

164 These peculiar heterostructures formed as a consequence of the preferen

165 -tunneling transistors is presented based on heterostructures formed between graphene, highly doped s

166 For heterostructures formed by depositing terephthalic acid

167 Kondo resonances in heterostructures formed by magnetic molecules on a metal

168 eously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defe

169 itaxial strain, which is ubiquitous in MeRAM heterostructures, gives rise to a rich variety of VCMA b

170 Within the vertical heterostructure, graphene acts as a diffusion barrier to

171 transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show

172 d photovoltaic properties, without requiring heterostructure growth procedures or device fabrication

173 magnetostrictive/piezoelectric multiferroic heterostructures has been demonstrated, there are presen

174 o the growth modeling of van der Waals (vdW) heterostructures has not yet been developed.

175 The created polymer-GNR intraribbon heterostructures have a type-I energy level alignment an

176 Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for

177 0.7Sr0.3MnO3/Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 heterostructures have been performed using a quasi-stati

178 Metal heterostructures have been used in recent years to gain

179 Van der Waals heterostructures have emerged as promising building bloc

180 aces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resul

181 Semiconductor heterostructures have played a critical role as the enab

182 graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties fo

183 lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmosphe

184 logical potential of atomically thin lateral heterostructures in optoelectronic applications.

185 ble metals to aluminum based antenna-reactor heterostructures in plasmonic photocatalysis provides a

186 the probabilistic switching of Ta/CoFeB/MgO heterostructures in presence of spin-orbit torque and th

187 nt strategies for using such 2D-nanomaterial heterostructures in the development of modern immunosens

188 ies from superconductor (S)/ferromagnet (FM) heterostructures include pi-junctions, triplet pairing,

189 Diverse parallel stitched 2D heterostructures, including metal-semiconductor, semicon

190 d manipulation of charge density at an oxide heterostructure interface and therefore may be beneficia

191 tallic states at the LaAlO3/SrTiO3 (LAO/STO) heterostructure interface is known to occur at a critica

192 faces such as charged ferroelectric walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/S

193 wth of 2D, 1D-MoSe2 , and 1D-2D-MoSe2 hybrid heterostructure is achieved by tuning the growth tempera

194 The vdW heterostructure is composed of suitable multiple layers

195 thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional c

196 electric voltage across the Au/h-BN/graphene heterostructure is measured at 2omega using a lock-in am

197 in which a graphene/hexagonal boron nitride heterostructure is suspended over a gold nanostripe arra

198 The 3D NiO/PANI/ZnO heterostructure is then chose as a model for electrochem

199 gned graphene/hexagonal boron nitride (h-BN) heterostructures is a lateral superlattice with high ele

200 ME](+) [TFSI](-) /Co field-effect transistor heterostructures is addressed.

201 properties in magnetoelectric (ME) composite heterostructures is crucial for multiple transduction ap

202 electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously re

203 ect devices, fabricated on the complex-oxide heterostructure LaAlO3 /SrTiO3 , exhibit quantum interfe

204 It is shown that shallow-well heterostructures lead to optimal quantum-transport in th

205 The success of van der Waals heterostructures made of graphene, metal dichalcogenides

206 rge-scale, spatially controlled synthesis of heterostructures made of single-layer semiconducting mol

207 The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials

208 for highly robust growth of diverse lateral heterostructures, multiheterostructures, and superlattic

209 interfacial charge transfer of g-C3N4-based heterostructured nanohybrids will also be theoretically

210 t transformation into a single multimetallic heterostructured nanoparticle through thermal annealing.

211 nd fabrication of hierarchical In2S3-CdIn2S4 heterostructured nanotubes as efficient and stable photo

212 Accordingly, the hierarchical heterostructured nanotubes facilitate separation and mig

213 e to a great change in band structure of the heterostructure, not only producing an aligned internal

214 155 K of Sr2VO3FeAs, a naturally assembled heterostructure of an FeSC and a Mott-insulating vanadiu

215 upling of 7 V cm(-1) Oe(-1) is achieved in a heterostructure of piezoelectric Pb(Zr,Ti)O3 (PZT) film

216 res a mass production method able to produce heterostructures of arbitrary complexity on any substrat

217 Here, a photodetector based on van der Waals heterostructures of graphene and its fluorine-functional

218 nstrated using the examples of van der Waals heterostructures of In2Se3/graphene, exhibiting a tunabl

219 Heterostructures of insulating materials hold great prom

220 l of inversion-symmetry breaking in designer heterostructures of oxides and other material classes.

221 arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds

222 to control atomic diffusion in van der Waals heterostructures of two-dimensional (2D) crystals.

223 roadband modulation of optical signals using heterostructures of two-dimensional materials.

224 Ionic transport in metal/oxide heterostructures offers a highly effective means to tail

225 e atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create nove

226 by additional interfacial interactions in a heterostructure, often inducing exotic phases with unpre

227 or structure by placing a WS2/MoS2 monolayer heterostructure on top of an Al2O3-capped Ag single-crys

228 ing loss and gain components in one photonic heterostructure opens a new route to efficient manipulat

229 of interlayer e-h pairs in 2D semiconductor heterostructure photocells.

230 of graphene with semiconductor materials in heterostructure photodetectors enables amplified detecti

231 Here, atomically thin graphene-WS2 heterostructure photodetectors encapsulated in an ionic

232 s), metal nanoparticles, semiconductor-metal heterostructures, pi-conjugated semiconductor nanopartic

233 The heterostructures possess a high density of interfaces be

234 atomically-thin van der Waals materials into heterostructures provides a powerful path towards the cr

235 ed flakes, and the controlled growth of such heterostructures remains a significant challenge.

236 toelectron spectroscopy studies of SNNO/LSMO heterostructures reveal about 0.1 electron per 2D unit c

237 a refrigerator) in using van der Waals (vdW) heterostructure sandwiched between two graphene electrod

238 We report on the first synthesis of a heterostructured semiconductor tetrapod from CdSe@CdS th

239 Furthermore, this CZTS/MoS2-rGO heterostructure showed much higher photocatalytic activi

240 fer kinetics, the as-grown Mo2 C-on-graphene heterostructure shows a much lower onset voltage for hyd

241 rovide a materials platform for entirely new heterostructure spintronic devices that make use of the

242 ients in compositionally graded PbZr1-xTixO3 heterostructures stabilize needle-like ferroelastic doma

243 MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vis-NIR spectro

244 al properties are investigated for different heterostructures such as graphene-MoS2, graphene-hBN, gr

245 n observed at the interface of LaAlO3/SrTiO3 heterostructures such as two dimensional metallic conduc

246 tional improvement in semiconductor NR/metal heterostructures (such as Pt tipped CdSe@CdS dot-in-rod

247 pping studies showed that a wide range of 2D heterostructures (such as WS2-WSe2 and WS2-MoSe2), multi

248 rial heterojunction structures also known as heterostructures, such as field-effect transistors, requ

249 We show examples of all-inkjet-printed heterostructures, such as large-area arrays of photosens

250 ications on our understanding of nanocrystal heterostructure synthesis and open up new routes to vary

251 g and the inversion symmetry breaking in the heterostructure system.

252 Synthetic accessibility to this dipolar heterostructured tetrapod enabled the use of these as co

253 on the selective synthesis of an asymmetric heterostructured tetrapod that is capable of 1D dipolar

254 eformable array of three-dimensional calcite heterostructures that are partially locked in silicone.

255 ed aluminum in cuprous oxide antenna-reactor heterostructures that operate more effectively and selec

256 n astutely designed magnetized semiconductor heterostructure, the above limit can be exceeded by orde

257 ith more than a decade of researches on this heterostructure, the origin of the interfacial conductiv

258 In conventional semiconductor heterostructures, the design of multijunctions is critic

259 With increasing heterostructure thickness and misfit dislocation formati

260 rature, has been incorporated into nanoscale heterostructures through solution-phase epitaxial growth

261 oupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research a

262 ducting crystals enables us to exploit these heterostructures to assemble two-dimensional logic circu

263 The AlGaN/GaN heterostructures transferred to flexible substrates are

264 er four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultr

265 ructure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron

266 d within [(Pbx Sn1-x Se)1+delta ]n (TiSe2 )1 heterostructures using electron microscopy.

267 S2 /WS2(1-x) Se2x /WS2 multijunction lateral heterostructure via direct growth by chemical vapor depo

268 ptoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficie

269 The PL emission of the heterostructures was monitored with an inexpensive reade

270 calculation on a model type-II semiconductor heterostructure we predict the optimal conditions for co

271 tructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected

272 phene and multilayer hexagonal boron nitride heterostructures, we discuss the potential of electromag

273 ief overview of synthesis of various NRs and heterostructures, we introduce their electronic structur

274 Herein, (BiPb)FeO3/SrRuO3/SrTiO3-heterostructures were sputtered with various top (BiPb)F

275 Corn-like, gamma-Fe2O3@SiO2@TiO2 core/shell heterostructures were synthesized by a modified solvothe

276 Fe3O4@SiO2@TiO2 corn-like heterostructures were then obtained by sequential TiO2 c

277 o understand artificial BiFeO3/SrRuO3/SrTiO3-heterostructures, wherein an altered environment at each

278 relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled ma

279 r, we study a FeGaB/NiTi/PMN-PT multiferroic heterostructure, which can be operating in different sta

280 (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with

281 ables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for

282 behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as a

283 metal dichalcogenides region in the lateral heterostructure with low-energy exciton resonance.

284 Our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and de

285 how both goals can be achieved in a nanorod heterostructure with type-II band offsets.

286 eering strategy for designing multicomponent heterostructures with advanced performance in hydrogen e

287 ing method can be used to grow complex oxide heterostructures with atomically well-defined heterointe

288 Thin film magnetic heterostructures with competing interfacial coupling and

289 acilitating the preparation of van der Waals heterostructures with controlled doping.

290 method to organize charge transfer molecular heterostructures with externally tunable conductance and

291 eigenvalues is theoretically demonstrated in heterostructures with four channels obtained by combinin

292 rate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitri

293 been used to realize previously inaccessible heterostructures with interesting physical properties.

294 e believed to be broadly applicable to other heterostructures with novel applications.

295 ls has enabled the creation of artificial 2D heterostructures with novel functionality and emergent p

296 iting the manipulation capabilities of these heterostructures with respect to exfoliated materials.

297 Precise control of the selective growth of heterostructures with specific composition and functiona

298 Two-dimensional heterostructures with strong spin-orbit coupling have di

299 The two-dimensional molecular van der Waals heterostructures with tunable optical-electronic-magneti

300 Application to the MoS2/WS2 heterostructure yields good agreement with experiments,