ライフサイエンスコーパス: hydrofluoric

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1 are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods.

2 Surface preparation has relied on hydrofluoric acid (HF) electrochemical etching which is

3 Here we used hydrofluoric acid (HF) pretreatment to remove phosphorus

4 t of pretreating samples by exposing them to hydrofluoric acid (HF) vapor prior to SERS analysis, a s

5 facet of anatase through in situ release of hydrofluoric acid (HF), allowing for the formation of un

6 beings and the environment due to the use of hydrofluoric acid (HF).

7 rom clinical isolates that were treated with hydrofluoric acid (which removes the A. fumigatus RodA p

8 le for serious injury and death in children: hydrofluoric acid and methacrylic acid.

9 Analysis of LTA fragments obtained after hydrofluoric acid and nitrous treatments showed that the

10 d from the lipid A by treatment with aqueous hydrofluoric acid and was identified as galactosamine fo

11 F and complete dephosphorylation of PHF with hydrofluoric acid does not affect PHF solubility.

12 In combination with the directed hydrofluoric acid etching of a glass substrate using a p

13 res no micromanipulation under a microscope, hydrofluoric acid etching, or use of column fittings.

14 After treating PFPA-SNPs or Man-SNPs with hydrofluoric acid followed by lyophilization, the remain

15 The reactions are promoted by hydrofluoric acid generated in situ from potassium hydro

16 hat 1) the activity is sensitive to base and hydrofluoric acid hydrolysis; 2) AF binds to Mono Q, ind

17 ers followed by removal of silica cores with hydrofluoric acid or concentrated alkali.

18 wetland soils were acquired before and after hydrofluoric acid pretreatment to assess quantitatively

19 hing continues until the silica touching the hydrofluoric acid reservoir is completely removed, essen

20 Hydrofluoric acid resistance, (31)P-NMR, and (32)P label

21 Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process that i

22 We used hydrofluoric acid solution calorimetry to obtain the ent

23 itride surface was treated with concentrated hydrofluoric acid to improve surface homogeneity.

24 quired removal of the GPI anchors by aqueous hydrofluoric acid treatment and cleavage at aspartate-pr

25 of 1,3,4-trimethylimidazolium hydroxide and hydrofluoric acid under hydrothermal conditions at 448 K

26 Hydrofluoric acid was utilized to etch out the silica pa

27 Subsequent dissolution of the silica with hydrofluoric acid yields a free-standing replica of the

28 with the assistance of cationic surfactant, hydrofluoric acid, and ammonia hydroxide.

29 ed-silica capillary is immersed into aqueous hydrofluoric acid, and water is pumped through the capil

30 ide (Ti3AlC2, a 'MAX' phase) in concentrated hydrofluoric acid, have been shown to have volumetric ca

31 rcumvented by masking with ascorbic acid and hydrofluoric acid, respectively.

32 by annealing followed by partial attack with hydrofluoric acid, result in suites of consistent and co

33 the reaction of CO with the liquid superacid hydrofluoric acid-antimony pentafluoride (HF-SbF5) under

34 hod in addition to the harsher commonly used hydrofluoric acid-based procedure.

35 were prepared and divided into 5 groups: HF (hydrofluoric acid-etching), Er:YAG laser + HF, Graphite

36 We also found that DeltarodA and hydrofluoric acid-treated conidia stimulate significantl

37 avoidance of handling hazardous concentrated hydrofluoric acid.

38 aggressive chemicals including, for example, hydrofluoric acid.

39 ity for most common ions and is resistant to hydrofluoric acid.

40 n-bearing materials, we suggest physical and hydrofluoric-acid barrier coatings such as WO3, LiAl5O8

41 gs for a cathode, we further present optimal hydrofluoric-acid scavengers such as Li2SrSiO4, Li2CaSiO

42 coatings such as WO3, LiAl5O8 and ZrP2O7 and hydrofluoric-acid scavengers such as Sc2O3, Li2CaGeO4, L

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