ライフサイエンスコーパス: indium

1 -, and EGaIn = eutectic alloy of gallium and indium).

2 l platelets with either (51)chromium or (111)indium.

3 d EGaIn is the eutectic alloy of gallium and indium.

4 ium with group III and IVB elements, such as indium.

5 tructures formed from aluminum, gallium, and indium.

6 n, we have observed the presence of a shiny, indium(0) nugget throughout the reaction, irrespective o

7 MPM tumors by using HER1- and HER2-targeted indium 111 ((111)In)- and iodine 125 ((125)I)-labeled pa

8 h cells radiolabeled with 3.7-MBq (100-muCi) indium 111 ((111)In)-oxine (cell-associated HIV surrogat

9 riaminepentaacetic acid [DTPA]-gadolinium or indium 111-bis-5-HT-DTPA, respectively).

10 nal antibody PD-L1.3.1 was radiolabeled with Indium-111 ((111)In) and characterized using PD-L1-expre

11 D-L1 antibody conjugated to the radionuclide Indium-111 ((111)In) for imaging and biodistribution stu

12 ntrast, radiometal-chelate complexes such as indium-111-1,4,7,10-tetraazacyclododecane-1,4,7,10-tetra

13 ting the metal precursors (copper iodide and indium acetate) in dodecanethiol (DDT).

14 were synthesized by thermal decomposition of indium acetylacetonate, In(acac)(3), and tin bis(acetyla

15 nanopipette tip immersed in a liquid gallium/indium alloy electrode, which not only protects the ultr

16 ectronics composed of a liquid-phase Gallium-Indium alloy with micron-scale circuit features is intro

17 ed silver substrate; EGaIn: eutectic gallium-indium alloy) which shows reproducible rectification wit

18 tional groups, and EGaIn is eutectic gallium-indium alloy.

19 ately volatile elements (such as lead, zinc, indium and alkali elements) relative to CI chondrites, t

20 Indium and cadmium play different but complementary role

21 Indium and indium tin oxide (ITO) are extensively used i

22 o-aldol-aldol-hemiacetal-reaction cascade of indium and other group 13 metal enolates furnished 6-deo

23 esis of composite inorganic clusters between indium and s-, d-, and f-block elements.

24 bsequent B-C reductive elimination (for both indium and thallium).

25 ly robust monomeric MX2 radicals of gallium, indium and thallium.

26 of reversibility in M-C bond formation (for indium) and to the isolation of products resulting from

27 ce-electron bis(boryl) complexes of gallium, indium, and thallium undergo oxidative M-C bond formatio

28 ong others, specialty metals (e.g., gallium, indium, and thallium) and some heavy rare earth elements

29 quantum dots are defined by gate voltages in indium antimonide nanowires.

30 n geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acous

31 ermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electr

32 ve investigation of the kinetics that govern indium arsenide nanocrystal growth.

33 architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superco

34 qubit pair, using a single electron-charged indium arsenide quantum dot.

35 ns based on short-wavelength infrared light, indium arsenide quantum dots are promising candidates to

36 We show that the size distribution of indium arsenide quantum dots indeed improves with decrea

37 ese insights, we design a synthesis of large indium arsenide quantum dots with narrow emission linewi

38 We further synthesize indium arsenide-based core-shell-shell nanocrystals with

39 ty of III-V QDs such as indium phosphide and indium arsenide.

40 , water, or ethanol), has been prepared with indium as the metal center.

41 Here we describe the self-assembly of indium atoms into metallic chains on the silicon (001) s

42 er chemical system and constructed the first indium-based alb-MOF, In-alb-MOF, by employing trinuclea

43 34) (40 mg/m(2)), followed by (131)I-di-DTPA-indium bivalent hapten (1.8 GBq/m(2)) 4-6 d later.

44 Reduction of indium boryl precursors to give two- and three-dimension

45 -based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fa

46 Furthermore, the phosphasalen indium catalysts do not require any chiral additives.

47 Here, phosphasalen indium catalysts feature high rates (30+/-3 m(-1) min(-1

48 barrier of the key step of the gallium- and indium-catalyzed cycloisomerization of 1,6-enynes is rev

49 Indium coatings also undergo reversible alloying reactio

50 A family of racemic and enantiopure indium complexes 1-11 bearing bulky chiral diaminoarylox

51 ntum wells, which indeed can be tuned by the indium composition, suggest that the Nb-In0.75 Ga0.25 As

52 continually introduced to the workplace (eg, indium compounds and vicinal diketones).

53 t potential ecotoxicological implications of indium contamination.

54 composed of a liquid-phase eutectic gallium-indium core and a thiolated polymeric shell.

55 Overall, 95% (2.4 g m(-2) CIGS) of the indium could be extracted to the D2EHPA phase.

56 In the present work, the history of indium deposition from the atmosphere is reconstructed f

57 Using indium-doped cadmium oxide (ICO) as an example, we show

58 tured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck c

59 a Prussian blue spot electrodeposited on an indium-doped tin oxide thin film as the electrochromic i

60 n oxide layer that forms on eutectic gallium indium (EGaIn) in a controlled reproducible manner.

61 lled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple roller coa

62 nds has been grown as single crystals via an indium flux.

63 easing market price and limited resources of indium for indium tin oxide (ITO) materials currently ap

64 erent nanofiltration membranes of extracting indium from copper-indium-gallium- selenide photovoltaic

65 hosphoric acid (D2EHPA) extracted 97% of the indium from the retentates, separating it from all other

66 The lattice matched Indium Gallium Arsenide (In0.53Ga0.47As) is identified a

67 graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itse

68 Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum

69 Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-9

70 work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films

71 In particular, indium gallium oxide has garnered attention as a thin-fi

72 two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (Cd

73 The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the

74 ing single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

75 lymer composite emissive layer, and eutectic indium-gallium as the cathode.

76 film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on volt

77 sed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

78 n membranes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leacha

79 Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexi

80 Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating

81 gration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achie

82 trength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and off

83 a biosensor structure consisting of an IGZO (Indium-Gallium-Zinc-Oxide) TFT (thin film transistor) an

84 ichiometry, indicating disproportionation of indium halide byproduct formed during the reaction.

85 s, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the

86 d for the generation of complexes containing indium(i), gallium(i), germanium(ii), and even silicon(i

87 and we suggest that these species contain an indium(III) center.

88 from the potassium reduction of a bis(boryl)indium(III) chloride precursor, analogous reduction of t

89 initially developed using gold(I) catalysis, indium(III) proves to be a far superior catalyst in term

90 by the nucleobase is minimized by the use of indium(III) triflate as the donor activating reagent; th

91 efficients to resonant levels created by the indium impurities inside the valence band, supported by

92 Slight tin-substitution for indium in CeRhIn5 shifts its antiferromagnetic quantum c

93 th's volatiles, notably the overabundance of indium in the silicate Earth.

94 A sulfonated indium (In) metal organic framework (MOF) is reported wi

95 kely related to the diffusion/segregation of indium (In), have been optically activated by the therma

96 ion, relaxation of internal strain caused by indium incorporation will facilitate pushing the emissio

97 The addition of an allenyl indium intermediate to chiral N-tert-butanesulfinyl imin

98 he diastereoselective addition of an allylic indium intermediate to chiral o-bromophenyl sulfinyl imi

99 is explained by differences in soluble free indium ion concentrations.

100 The metal indium is an example of an increasingly important materi

101 Indium is of foremost interest being widely used, expens

102 , retention of intracoronarily infused, (111)Indium-labeled cells within the heart was closely associ

103 ics in healthy volunteers and shows that 111-Indium-labeled eosinophils can be used to monitor the fa

104 Using autologous, minimally manipulated 111-Indium-labeled leukocytes with blood sampling, we measur

105 ilicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact.

106 ng adjacent microcapsules containing gallium-indium liquid metal (top).

107 oach employs a sequence involving an initial indium-mediated allenylation reaction of an arylacyl bro

108 pproach employs a sequence involving initial indium-mediated allenylation reactions of phenacyl halid

109 Two consecutive indium-mediated aminoallylations with the appropriate en

110 plished from indole-3-carbaldehydes, through indium-mediated Barbier allenylation reaction taking adv

111 sformation of D-glucosamine, commencing with indium-mediated Barbier reaction without isolation of in

112 imple, efficient, and general method for the indium-mediated enantioselective propargylation of aroma

113 lpha,alpha-difluoro carbonyl compounds using indium metal is described.

114 Under Barbier-type conditions, indium metal was used to generate allyl- and allenylindi

115 tive wet-treatment with Na2 S transforms two indium metal-organic frameworks (MOFs) into a series of

116 report the synthesis of a series of positive indium metal-organic frameworks and their utilization as

117 hlorodiisopinocampheylborane ((d)DIP-Cl) and indium metal.

118 Remarkably, the extent of indium metalation of porphyrin macrocycles in UNLPF-10 c

119 tral range of green to violet by varying the indium mole fraction of the InxGa1-xN MQWs in the range

120 Metallic indium nanocrystals are codispersed with silver nanocrys

121 Here, molecular effects of indium nitrate (In(NO3)3) and ITO nanoparticles were inv

122 ed a colloidal synthesis of 4-10 nm diameter indium nitride (InN) nanocrystals that exhibit both a vi

123 -exchange chemistry for creating coatings of indium on lithium.

124 n example for a post-transition-metal oxide, indium oxide (In2O3).

125 tate study of pristine and defected forms of indium oxide (In2O3, In2O3-x, In2O3(OH)y and In2O3-x(OH)

126 d interfacial layers (IFLs) on the tin-doped indium oxide (ITO) anodes of organic photovoltaic (OPV)

127 tal-in-glass' composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass)

128 Sn-doped indium oxide (ITO) nanoparticles (NPs) were conceived as

129 transparent conducting material is tin-doped indium oxide (ITO), a wide-gap oxide whose conductivity

130 gh heavy doping, as in the case of tin-doped indium oxide (ITO).

131 on resonances (LSPRs) in colloidal tin-doped indium oxide (Sn:In2O3, or ITO) nanocrystals.

132 but also for 'opaque' electrodes, tin-doped indium oxide and silver nano-films.

133 , comparable with state of the art tin-doped indium oxide coatings deposited from nanocrystal inks.

134 pplication of a high-surface-area, tin-doped indium oxide electrode surface-derivatized with a terpyr

135 pecies deposit preferentially onto tin-doped indium oxide instead of carbon during electrochemical ch

136 2)2bpy)(OH2)](2+) surface bound to tin-doped indium oxide mesoporous nanoparticle film electrodes (na

137 er of this approach by introducing tin-doped indium oxide nanocrystals into niobium oxide glass (NbOx

138 her prepare carbon nanofibers with tin-doped indium oxide nanoparticles decorating the surface as hyb

139 tally observed enhanced activity of defected indium oxide surfaces for the gas-phase reverse water ga

140 hotoactive behavior of pristine and defected indium oxide surfaces providing fundamental insights int

141 PhotoVoltaics, specifically molybdenum-doped indium oxide, dysprosium-doped cadmium oxide, graphene a

142 defect states within the optical band gap of indium oxide.

143 a degenerate n-type semiconductor (tin-doped indium oxide; ITO) is reported.

144 xy) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned sup

145 In the present study, we developed an Indium Phosphide (InP) semiconductor-based resistive bio

146 d to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces critically import

147 control and uniformity of III-V QDs such as indium phosphide and indium arsenide.

148 ffraction structure of a carboxylate-ligated indium phosphide magic-sized nanocluster at 0.83 A resol

149 nsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon

150 anometer-resolution hyperspectral imaging of indium phosphide nanowires via excitation and collection

151 Introduction of indium phosphide photocathodes and titanium dioxide phot

152 and construct sizing curves for cluster-free indium phosphide QDs.

153 s, purification and mass characterization of indium phosphide quantum dot growth mixtures.

154 error rate, GHz clocked QKD operation of an indium phosphide transmitter chip and a silicon oxynitri

155 An anionic indium porphyrin framework (UNLPF-10) consisting of rare

156 The process comprises indium-promoted one-pot carbonyl bis(allenylation) and g

157 d EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating mol

158 he addition of an in situ formed pentadienyl indium reagent to chiral tert-butylsulfinimines, previou

159 he electronic response of single crystals of indium selenide by means of angle-resolved photoemission

160 cond harmonic signal versus the thickness of Indium Selenide crystals, in contrast to the quadratic i

161 The loss spectrum of indium selenide shows the direct free exciton at 1.3 eV

162 ewis acidic coordinately unsaturated surface indium site proximal to an oxygen vacancy and a Lewis ba

163 ction through coordination to the accessible indium sites.

164 utanesulfinamide and in situ generated allyl indium species.

165 latelets (NPls) from template CuInS2 (copper indium sulfide, CIS) NPls via a cation exchange (CE) rea

166 sed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to

167 ons from the corresponding allyl bromide and indium, thereby expanding the utility of the DIP-Cl reag

168 0%) than other transparent materials such as indium tin oxide ( approximately 80%) and ultrathin meta

169 ighly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes.

170 rodes made from graphene (at the bottom) and indium tin oxide (at the top) for dielectrophoretic cell

171 duced the electron injection barrier between indium tin oxide (ITO) and C70 by 0.67 eV.

172 fabricated by a self-alignment of conducting Indium Tin Oxide (ITO) and rGO layer without etching of

173 h efficiency solar cells, on semitransparent indium tin oxide (ITO) and titanium dioxide (TiO2) elect

174 The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (

175 Indium and indium tin oxide (ITO) are extensively used in electroni

176 sparency, slides coated with a thin layer of indium tin oxide (ITO) are the standard substrate for pr

177 Silver (Ag) metal and indium tin oxide (ITO) are used for the fabrication of t

178 face and enzyme coated NPs were deposited on indium tin oxide (ITO) coated flexible polyethylene tere

179 -cMWCNTs) deposited electrophoretically onto indium tin oxide (ITO) coated glass electrode and have b

180 HeLa cells were grown directly on indium tin oxide (ITO) coated glass slides.

181 in film of NiO nanoparticles deposited on an indium tin oxide (ITO) coated glass substrate serves as

182 on the same Au nanoparticle (AuNP)-modified indium tin oxide (ITO) coated glass surfaces.

183 oxidase (GOx) was immobilized on a modified indium tin oxide (ITO) coated polyethylene terephthalate

184 electrode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved

185 ynechococcus elongatus , on a nanostructured indium tin oxide (ITO) electrode and to covalently immob

186 ing of gold nanoparticle (AuNP) arrays on an indium tin oxide (ITO) electrode using efficient and low

187 defined supported Ru(bda) catalyst on porous indium tin oxide (ITO) electrode.

188 ucture of PVDF nanowires-PDMS composite film/indium tin oxide (ITO) electrode/polarized PVDF film/ITO

189 (QD)-sensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H2-generatin

190 urface consists of nanostructured silver and indium tin oxide (ITO) electrodes which are separated by

191 ted polymeric films on optically transparent indium tin oxide (ITO) electrodes.

192 e to reference devices using polycrystalline indium tin oxide (ITO) electrodes.

193 bon nanotube (SWCNT) forests were printed on indium tin oxide (ITO) electrodes.

194 d on Lossy Mode Resonances generated by thin indium tin oxide (ITO) films fabricated onto the planar

195 ists of a plano-convex PVC gel micro-lens on Indium Tin Oxide (ITO) glass, confined with an annular e

196 This control is achieved by embedding indium tin oxide (ITO) into these cavities.

197 Whereas indium tin oxide (ITO) is a well-known transparent condu

198 et price and limited resources of indium for indium tin oxide (ITO) materials currently applied in mo

199 Monodisperse 11 nm indium tin oxide (ITO) nanocrystals (NCs) were synthesiz

200 Indium tin oxide (ITO) nanoparticles were spray-coated o

201 alignment is demonstrated by various shaped indium tin oxide (ITO) patterns.

202 iron oxide (Fe3O4) nanodots fabricated on an indium tin oxide (ITO) substrate via a block copolymer t

203 r cytochrome c directly immobilized onto the indium tin oxide (ITO) surface, we measured a reaction r

204 Bi NPs were fabricated on indium tin oxide (ITO) surfaces from a bismuth trichlori

205 aR and controlled potential coulometry in an indium tin oxide (ITO) thin-layer electrochemical cell.

206 An optically transparent patterned indium tin oxide (ITO) three-electrode sensor integrated

207 An indium tin oxide (ITO) transparent electrical heater is

208 raphene is more electrochemically inert than indium tin oxide (ITO) where ITO undergoes reduction-oxi

209 We demonstrate Mn CSV using an indium tin oxide (ITO) working electrode both bare and c

210 supported by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as

211 place the most common transparent conductor, indium tin oxide (ITO), with a material that gives compa

212 Nanoporous films of indium tin oxide (ITO), with thicknesses ranging from 25

213 arge-neutral morpholino capture probes on an indium tin oxide (ITO)-coated glass slide.

214 nic acid self-assembled monolayers (SAMs) on indium tin oxide (ITO).

215 The working electrode was composed of indium tin oxide (ITO); the quasi-reference and auxiliar

216 g the composite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhib

217 ransparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role

218 A novel titanium/indium tin oxide annealed alloy is exploited as transpar

219 y >10(10) cm(-2) at the interface between an indium tin oxide anode and the common small molecule org

220 ks are considered a promising alternative to indium tin oxide as transparent conductors.

221 stacks of naphthalenediimides were grown on indium tin oxide by ring-opening disulfide-exchange poly

222 We report that indium tin oxide can acquire an ultrafast and large inte

223 trochemical cell comprising an fcc3-modified indium tin oxide cathode linked to a cobalt phosphate-mo

224 ES) and electrophoretically deposited on the indium tin oxide coated glass substrate at a low DC pote

225 hose with sputtered intrinsic zinc oxide and indium tin oxide contacts.

226 oxide/3-aminopropyl-triethoxysilane modified indium tin oxide electrode (ITO/APTES/GO/HSA) has been d

227 Ag nanoparticles (NPs) at the surface of an indium tin oxide electrode.

228 molecules onto a gold-nanoparticle-patterned indium tin oxide electrode.

229 In contrast, P450 BM3 adsorbed on unmodified indium tin oxide electrodes revealed 36% activity by ele

230 Gold and indium tin oxide electrodes were characterized with resp

231 The conducted experiments with a 10 nm indium tin oxide film, having plasmonic resonance in the

232 Epitaxial indium tin oxide films have been grown on both LaAlO3 an

233 ance of graphene is much higher than that of indium tin oxide films, especially at large incident ang

234 cell assembled on a polyethylene naphthalate-indium tin oxide flexible substrate with a PCE of 3.12%

235 Alternatives to indium tin oxide have recently been reported and include

236 ted on graphene electrodes has out-performed indium tin oxide in power conversion efficiency (PCE).

237 ally sputtered both intrinsic zinc oxide and indium tin oxide layers.

238 n the optoelectronic properties of colloidal indium tin oxide nanocrystals is reported.

239 rfaces of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to pr

240 A silver nanowire-indium tin oxide nanoparticle composite and its successf

241 generation from an individual semiconductor indium tin oxide nanoparticle is significantly enhanced

242 into a near field localized at its gap; the indium tin oxide nanoparticle located at the plasmonic d

243 Chemically modified indium tin oxide nanoparticle modified electrodes were u

244 f up to 10(6)-fold compared with an isolated indium tin oxide nanoparticle, with an effective third-o

245 n the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following int

246 gh surface area conductive metal oxide film--indium tin oxide or antimony tin oxide--coated with a th

247 mory using SiO(x) as the active material and indium tin oxide or graphene as the electrodes.

248 stors, conductive transparent electrodes for indium tin oxide replacement, e.g. in light-emitting dio

249 In arrays of gold nanoparticles on an indium tin oxide substrate and arrays of 100-nanometer-d

250 to pearl shaped of Mn3O4-Cn nanocomposite on indium tin oxide substrate.

251 to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion

252 to achieve this first requires showing that indium tin oxide surfaces can be used for SMLM, then tha

253 ting onto glassy carbon, gold, platinum, and indium tin oxide surfaces.

254 hioesters to enolate acceptors on conductive indium tin oxide surfaces.

255 findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (ele

256 Electrode based on transparent layer of indium tin oxide was electrochemically modified with a l

257 When anchored to nanoITO (indium tin oxide), the ruthenium chromophore-catalyst as

258 d quartz, and to conductor supports, such as indium tin oxide, aluminum, highly ordered pyrolytic gra

259 rent limit of transparent conductors such as indium tin oxide, carbon-nanotube films, and doped graph

260 on of an external potential to a transparent indium tin oxide-coated electrode (the substrate), which

261 diameter Au nanoparticles (NPs) attached to indium tin oxide-coated glass electrodes in Br(-) and Cl

262 f colloids generated by photochemistry at an indium tin oxide-coated substrate.

263 el and two electrodes and were fabricated on indium tin oxide-coated substrates (e.g., polyester) sim

264 Thin films of indium tin oxide-the prototypical transparent electrode

265 h at least a similar workfunction to that of Indium Tin Oxide.

266 ies are comparable to those fabricated using indium tin oxide.

267 ance and yield become close to devices using indium tin oxide.

268 Our cells have a p-i-n structure (glass/indium tin oxide/NiO(x)/perovskite/ZnO/Al), in which the

269 ble perovskite solar-cell devices made on an indium tin oxide/poly(ethylene terephthalate) substrate

270 ed by an electropolymerisation process on an indium-tin oxide (ITO) coated glass substrate.

271 d cadmium selenide quantum dots (QCdSe) onto indium-tin oxide (ITO) coated glass substrate.

272 nalysis of single redox events on a modified indium-tin oxide (ITO) electrode.

273 utions was studied at glassy carbon (GC) and indium-tin oxide (ITO) electrodes modified by gold nanop

274 ted polymer (MIP-FU) films were deposited on indium-tin oxide (ITO) or Au film-coated glass slides, P

275 simple, and disposable immunosensor based on indium-tin oxide (ITO) sheets modified with gold nanopar

276 hermosynechococcus elongatus on a mesoporous indium-tin oxide (mesoITO) electrode.

277 oped a tailor-made hierarchically structured indium-tin oxide electrode that gives rise to the excell

278 ned electrode is shown to perform as well as indium-tin oxide glass.

279 printed on chips coated with either gold or indium-tin oxide.

280 smittance > 70%) that are rivalling those of indium-tin oxide.

281 For this purpose, we integrate indium-tin-oxide (ITO) as a tunable electro-optical mate

282 Polycaprolactone (PCL) electrospun fibers on indium-tin-oxide (ITO) glass provide a sufficient surfac

283 A transparent indium-tin-oxide (ITO) nanolens was designed to focus th

284 oantennas coupled to an optically absorptive indium-tin-oxide (ITO) substrate can generate >micrometr

285 as been electrophoretically deposited on the indium-tin-oxide (ITO) substrate.

286 dmium-telluride quantum dots (CdTe-QDs) onto indium-tin-oxide coated glass substrate.

287 s were electrophoretically deposited onto an indium-tin-oxide glass substrate and used for immobiliza

288 We present indium-tin-oxide-based photocurrent measurements that re

289 trate-stabilized Au nanoparticles (NPs) onto indium-tin-oxide-coated glass (glass/ITO) electrodes as

290 inc, copper, and tin sulfides are sources of indium to the atmosphere in this region.

291 contacted by a eutectic alloy of gallium and indium top contacts.

292 Using the Lewis acid indium triflate [In(OTf)(3)] induced regioselective form

293 Indium triflate can be efficiently used for Prins cycliz

294 The combination of Pt(0) complexes and indium trihalides leads to compounds that form equilibri

295 The removal of the iodide ion from indium triiodide by means of reactive Ag(I) salts leads

296 Even at very acidic pH indium was retained to >98% by nanofiltration, separatin

297 m-electrode, and a eutectic alloy of gallium-indium was used as the top-electrode.

298 s a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak flux

299 We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (

300 oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal