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1 -, and EGaIn = eutectic alloy of gallium and indium).
2 l platelets with either (51)chromium or (111)indium.
3 d EGaIn is the eutectic alloy of gallium and indium.
4 ium with group III and IVB elements, such as indium.
5 tructures formed from aluminum, gallium, and indium.
6 n, we have observed the presence of a shiny, indium(0) nugget throughout the reaction, irrespective o
7 MPM tumors by using HER1- and HER2-targeted indium 111 ((111)In)- and iodine 125 ((125)I)-labeled pa
8 h cells radiolabeled with 3.7-MBq (100-muCi) indium 111 ((111)In)-oxine (cell-associated HIV surrogat
10 nal antibody PD-L1.3.1 was radiolabeled with Indium-111 ((111)In) and characterized using PD-L1-expre
11 D-L1 antibody conjugated to the radionuclide Indium-111 ((111)In) for imaging and biodistribution stu
12 ntrast, radiometal-chelate complexes such as indium-111-1,4,7,10-tetraazacyclododecane-1,4,7,10-tetra
14 were synthesized by thermal decomposition of indium acetylacetonate, In(acac)(3), and tin bis(acetyla
15 nanopipette tip immersed in a liquid gallium/indium alloy electrode, which not only protects the ultr
16 ectronics composed of a liquid-phase Gallium-Indium alloy with micron-scale circuit features is intro
17 ed silver substrate; EGaIn: eutectic gallium-indium alloy) which shows reproducible rectification wit
19 ately volatile elements (such as lead, zinc, indium and alkali elements) relative to CI chondrites, t
22 o-aldol-aldol-hemiacetal-reaction cascade of indium and other group 13 metal enolates furnished 6-deo
26 of reversibility in M-C bond formation (for indium) and to the isolation of products resulting from
27 ce-electron bis(boryl) complexes of gallium, indium, and thallium undergo oxidative M-C bond formatio
28 ong others, specialty metals (e.g., gallium, indium, and thallium) and some heavy rare earth elements
30 n geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acous
31 ermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electr
33 architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superco
35 ns based on short-wavelength infrared light, indium arsenide quantum dots are promising candidates to
37 ese insights, we design a synthesis of large indium arsenide quantum dots with narrow emission linewi
42 er chemical system and constructed the first indium-based alb-MOF, In-alb-MOF, by employing trinuclea
45 -based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fa
48 barrier of the key step of the gallium- and indium-catalyzed cycloisomerization of 1,6-enynes is rev
51 ntum wells, which indeed can be tuned by the indium composition, suggest that the Nb-In0.75 Ga0.25 As
58 tured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck c
59 a Prussian blue spot electrodeposited on an indium-doped tin oxide thin film as the electrochromic i
61 lled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple roller coa
63 easing market price and limited resources of indium for indium tin oxide (ITO) materials currently ap
64 erent nanofiltration membranes of extracting indium from copper-indium-gallium- selenide photovoltaic
65 hosphoric acid (D2EHPA) extracted 97% of the indium from the retentates, separating it from all other
67 graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itse
69 Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-9
70 work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films
72 two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (Cd
73 The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the
76 film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on volt
78 n membranes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leacha
81 gration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achie
82 trength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and off
83 a biosensor structure consisting of an IGZO (Indium-Gallium-Zinc-Oxide) TFT (thin film transistor) an
85 s, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the
86 d for the generation of complexes containing indium(i), gallium(i), germanium(ii), and even silicon(i
88 from the potassium reduction of a bis(boryl)indium(III) chloride precursor, analogous reduction of t
89 initially developed using gold(I) catalysis, indium(III) proves to be a far superior catalyst in term
90 by the nucleobase is minimized by the use of indium(III) triflate as the donor activating reagent; th
91 efficients to resonant levels created by the indium impurities inside the valence band, supported by
95 kely related to the diffusion/segregation of indium (In), have been optically activated by the therma
96 ion, relaxation of internal strain caused by indium incorporation will facilitate pushing the emissio
98 he diastereoselective addition of an allylic indium intermediate to chiral o-bromophenyl sulfinyl imi
102 , retention of intracoronarily infused, (111)Indium-labeled cells within the heart was closely associ
103 ics in healthy volunteers and shows that 111-Indium-labeled eosinophils can be used to monitor the fa
104 Using autologous, minimally manipulated 111-Indium-labeled leukocytes with blood sampling, we measur
107 oach employs a sequence involving an initial indium-mediated allenylation reaction of an arylacyl bro
108 pproach employs a sequence involving initial indium-mediated allenylation reactions of phenacyl halid
110 plished from indole-3-carbaldehydes, through indium-mediated Barbier allenylation reaction taking adv
111 sformation of D-glucosamine, commencing with indium-mediated Barbier reaction without isolation of in
112 imple, efficient, and general method for the indium-mediated enantioselective propargylation of aroma
115 tive wet-treatment with Na2 S transforms two indium metal-organic frameworks (MOFs) into a series of
116 report the synthesis of a series of positive indium metal-organic frameworks and their utilization as
119 tral range of green to violet by varying the indium mole fraction of the InxGa1-xN MQWs in the range
122 ed a colloidal synthesis of 4-10 nm diameter indium nitride (InN) nanocrystals that exhibit both a vi
125 tate study of pristine and defected forms of indium oxide (In2O3, In2O3-x, In2O3(OH)y and In2O3-x(OH)
126 d interfacial layers (IFLs) on the tin-doped indium oxide (ITO) anodes of organic photovoltaic (OPV)
127 tal-in-glass' composites (that is, tin-doped indium oxide (ITO) nanocrystals embedded in NbOx glass)
129 transparent conducting material is tin-doped indium oxide (ITO), a wide-gap oxide whose conductivity
133 , comparable with state of the art tin-doped indium oxide coatings deposited from nanocrystal inks.
134 pplication of a high-surface-area, tin-doped indium oxide electrode surface-derivatized with a terpyr
135 pecies deposit preferentially onto tin-doped indium oxide instead of carbon during electrochemical ch
136 2)2bpy)(OH2)](2+) surface bound to tin-doped indium oxide mesoporous nanoparticle film electrodes (na
137 er of this approach by introducing tin-doped indium oxide nanocrystals into niobium oxide glass (NbOx
138 her prepare carbon nanofibers with tin-doped indium oxide nanoparticles decorating the surface as hyb
139 tally observed enhanced activity of defected indium oxide surfaces for the gas-phase reverse water ga
140 hotoactive behavior of pristine and defected indium oxide surfaces providing fundamental insights int
141 PhotoVoltaics, specifically molybdenum-doped indium oxide, dysprosium-doped cadmium oxide, graphene a
144 xy) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned sup
146 d to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces critically import
148 ffraction structure of a carboxylate-ligated indium phosphide magic-sized nanocluster at 0.83 A resol
149 nsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon
150 anometer-resolution hyperspectral imaging of indium phosphide nanowires via excitation and collection
154 error rate, GHz clocked QKD operation of an indium phosphide transmitter chip and a silicon oxynitri
157 d EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating mol
158 he addition of an in situ formed pentadienyl indium reagent to chiral tert-butylsulfinimines, previou
159 he electronic response of single crystals of indium selenide by means of angle-resolved photoemission
160 cond harmonic signal versus the thickness of Indium Selenide crystals, in contrast to the quadratic i
162 ewis acidic coordinately unsaturated surface indium site proximal to an oxygen vacancy and a Lewis ba
165 latelets (NPls) from template CuInS2 (copper indium sulfide, CIS) NPls via a cation exchange (CE) rea
166 sed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to
167 ons from the corresponding allyl bromide and indium, thereby expanding the utility of the DIP-Cl reag
168 0%) than other transparent materials such as indium tin oxide ( approximately 80%) and ultrathin meta
170 rodes made from graphene (at the bottom) and indium tin oxide (at the top) for dielectrophoretic cell
172 fabricated by a self-alignment of conducting Indium Tin Oxide (ITO) and rGO layer without etching of
173 h efficiency solar cells, on semitransparent indium tin oxide (ITO) and titanium dioxide (TiO2) elect
176 sparency, slides coated with a thin layer of indium tin oxide (ITO) are the standard substrate for pr
178 face and enzyme coated NPs were deposited on indium tin oxide (ITO) coated flexible polyethylene tere
179 -cMWCNTs) deposited electrophoretically onto indium tin oxide (ITO) coated glass electrode and have b
181 in film of NiO nanoparticles deposited on an indium tin oxide (ITO) coated glass substrate serves as
183 oxidase (GOx) was immobilized on a modified indium tin oxide (ITO) coated polyethylene terephthalate
184 electrode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved
185 ynechococcus elongatus , on a nanostructured indium tin oxide (ITO) electrode and to covalently immob
186 ing of gold nanoparticle (AuNP) arrays on an indium tin oxide (ITO) electrode using efficient and low
188 ucture of PVDF nanowires-PDMS composite film/indium tin oxide (ITO) electrode/polarized PVDF film/ITO
189 (QD)-sensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H2-generatin
190 urface consists of nanostructured silver and indium tin oxide (ITO) electrodes which are separated by
194 d on Lossy Mode Resonances generated by thin indium tin oxide (ITO) films fabricated onto the planar
195 ists of a plano-convex PVC gel micro-lens on Indium Tin Oxide (ITO) glass, confined with an annular e
198 et price and limited resources of indium for indium tin oxide (ITO) materials currently applied in mo
202 iron oxide (Fe3O4) nanodots fabricated on an indium tin oxide (ITO) substrate via a block copolymer t
203 r cytochrome c directly immobilized onto the indium tin oxide (ITO) surface, we measured a reaction r
205 aR and controlled potential coulometry in an indium tin oxide (ITO) thin-layer electrochemical cell.
208 raphene is more electrochemically inert than indium tin oxide (ITO) where ITO undergoes reduction-oxi
210 supported by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as
211 place the most common transparent conductor, indium tin oxide (ITO), with a material that gives compa
216 g the composite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhib
217 ransparent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role
219 y >10(10) cm(-2) at the interface between an indium tin oxide anode and the common small molecule org
221 stacks of naphthalenediimides were grown on indium tin oxide by ring-opening disulfide-exchange poly
223 trochemical cell comprising an fcc3-modified indium tin oxide cathode linked to a cobalt phosphate-mo
224 ES) and electrophoretically deposited on the indium tin oxide coated glass substrate at a low DC pote
226 oxide/3-aminopropyl-triethoxysilane modified indium tin oxide electrode (ITO/APTES/GO/HSA) has been d
229 In contrast, P450 BM3 adsorbed on unmodified indium tin oxide electrodes revealed 36% activity by ele
233 ance of graphene is much higher than that of indium tin oxide films, especially at large incident ang
234 cell assembled on a polyethylene naphthalate-indium tin oxide flexible substrate with a PCE of 3.12%
236 ted on graphene electrodes has out-performed indium tin oxide in power conversion efficiency (PCE).
239 rfaces of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to pr
241 generation from an individual semiconductor indium tin oxide nanoparticle is significantly enhanced
242 into a near field localized at its gap; the indium tin oxide nanoparticle located at the plasmonic d
244 f up to 10(6)-fold compared with an isolated indium tin oxide nanoparticle, with an effective third-o
245 n the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following int
246 gh surface area conductive metal oxide film--indium tin oxide or antimony tin oxide--coated with a th
248 stors, conductive transparent electrodes for indium tin oxide replacement, e.g. in light-emitting dio
251 to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion
252 to achieve this first requires showing that indium tin oxide surfaces can be used for SMLM, then tha
255 findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (ele
256 Electrode based on transparent layer of indium tin oxide was electrochemically modified with a l
258 d quartz, and to conductor supports, such as indium tin oxide, aluminum, highly ordered pyrolytic gra
259 rent limit of transparent conductors such as indium tin oxide, carbon-nanotube films, and doped graph
260 on of an external potential to a transparent indium tin oxide-coated electrode (the substrate), which
261 diameter Au nanoparticles (NPs) attached to indium tin oxide-coated glass electrodes in Br(-) and Cl
263 el and two electrodes and were fabricated on indium tin oxide-coated substrates (e.g., polyester) sim
268 Our cells have a p-i-n structure (glass/indium tin oxide/NiO(x)/perovskite/ZnO/Al), in which the
269 ble perovskite solar-cell devices made on an indium tin oxide/poly(ethylene terephthalate) substrate
273 utions was studied at glassy carbon (GC) and indium-tin oxide (ITO) electrodes modified by gold nanop
274 ted polymer (MIP-FU) films were deposited on indium-tin oxide (ITO) or Au film-coated glass slides, P
275 simple, and disposable immunosensor based on indium-tin oxide (ITO) sheets modified with gold nanopar
277 oped a tailor-made hierarchically structured indium-tin oxide electrode that gives rise to the excell
282 Polycaprolactone (PCL) electrospun fibers on indium-tin-oxide (ITO) glass provide a sufficient surfac
284 oantennas coupled to an optically absorptive indium-tin-oxide (ITO) substrate can generate >micrometr
287 s were electrophoretically deposited onto an indium-tin-oxide glass substrate and used for immobiliza
289 trate-stabilized Au nanoparticles (NPs) onto indium-tin-oxide-coated glass (glass/ITO) electrodes as
298 s a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak flux
299 We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (
300 oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal
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