ライフサイエンスコーパス: input resistance

1 gic POMC neurons are smaller and have higher input resistance.

2 action potential (AP) duration, and elevated input resistance.

3 oked an inward holding current and increased input resistance.

4 on and was caused by an increase in neuronal input resistance.

5 neurons was driven by increased steady-state input resistance.

6 ed by concomitant dorso-ventral gradients in input resistance.

7 hyperpolarization, decreased firing rate and input resistance.

8 ed to a small depolarization and increase in input resistance.

9 ly in SMCs (19%) and ECs (35%) and increased input resistance.

10 ent, (3) action potential amplitude, and (4) input resistance.

11 r maintenance of cell membrane potential and input resistance.

12 +) "leak" conductance and increased neuronal input resistance.

13 ostsynaptic depolarizations and increases in input resistance.

14 depolarization accompanied by a reduction in input resistance.

15 imulus resulted in a significant increase in input resistance.

16 ce did not produce a significant increase in input resistance.

17 depolarisation associated with a decrease in input resistance.

18 by scaling their synaptic current with their input resistance.

19 nist had any effect on membrane potential or input resistance.

20 of 10.82+/-0.72 mV (n=84) with a decrease in input resistance.

21 hich was associated with a small increase in input resistance.

22 e that hyperpolarizes cells and lowers their input resistance.

23 rons, through a learning-related decrease of input resistance.

24 xcitations were accompanied by a decrease in input resistance.

25 t cationic current, and increase in neuronal input resistance.

26 he only parameter that changed was a reduced input resistance.

27 ffect of excitatory synaptic currents by the input resistance.

28 ecause of increased depression and decreased input resistance.

29 ty by regulating both membrane potential and input resistance.

30 ain, with no change in membrane potential or input resistance.

31 ly increased in parallel with the increasing input resistance.

32 spiking cells, in part because of their high input resistance.

33 be greater for small interneurons with high input resistances.

34 excitability associated with an increase in input resistance 1 week after trauma.

35 ization (9 +/- 2 mV) and a reduction in cell input resistance (12 +/- 3 %).

36 in injured rats show (1) decreased membrane input resistance, (2) reduced low-threshold calcium burs

37 e accompanied by small increases in neuronal input resistance (25.0 +/- 9.9% in 4 out of 7 neurones t

38 VC(like) 191 +/- 13 ms, P < 0.001) and lower input resistance (346 +/- 49 MOmega vs. MVC(like) 496 +/

39 rization (11 mV) and an increase in membrane input resistance (361 to 437 M).

40 3 mV) was associated with decreased membrane input resistance (383 to 293 M).

41 s which projected to the fundus had a higher input resistance (400 +/- 25 Momega), a smaller and shor

42 ent ( approximately 10 nA), decreased muscle input resistance (50-fold), and a hyperpolarized resting

43 +/- 3.8 mV, P < 0.001) and increase in cell input resistance (53 +/- 40 %, P < 0.001) which was bloc

44 A fivefold lower input resistance, a higher firing threshold, and an incr

45 xpressing mutant TRESK subunits had a higher input resistance, a lower current threshold for action p

46 Octopus cells have very low input resistances (about 7 M Omega), and short time cons

47 y, including the resting membrane potential, input resistance, action potential threshold, and action

48 depolarized resting potential and the higher input resistance; additionally, these interneurons are a

49 eau of -34 mV, associated with a decrease in input resistance and a damped voltage oscillation with a

50 recordings showed a 10-fold increase in the input resistance and a large depolarization of Kir4.1 -/

51 ng and this was accompanied by a decrease in input resistance and a modest hyperpolarization.

52 sed a decrease in membrane time constant and input resistance and accelerated the rate of EPSP decay.

53 Although the resting membrane potential, input resistance and action potential characteristics we

54 ng (SC) neurons consistently exhibit reduced input resistance and action potential firing.

55 ) pyramidal neurons, exhibiting an increased input resistance and action potential frequency, as well

56 ctrophysiological properties, including cell input resistance and action potential waveforms, differe

57 t PTX-treated cells, ET-1 decreased the cell input resistance and activated a 5 mM Cs(+)-sensitive K(

58 A low input resistance and activation of a low-voltage-activat

59 e of the EPSP and IPSP, with a small drop in input resistance and an apparent reversal potential abov

60 IPSP was associated with a large decrease in input resistance and an apparent reversal potential belo

61 0 nM CsA resulted in a 29.1% decrease in CSN input resistance and an average -8+/-3 mV hyperpolarizat

62 resting membrane potential, firing pattern, input resistance and capacitance.

63 olarization was accompanied by a decrease in input resistance and cellular responsiveness, reversed n

64 re less excitable, with a decreased membrane input resistance and decreased ability to fire action po

65 Bombesin-related peptides reduced input resistance and depolarized the membrane potential.

66 o significant effect on resting potential or input resistance and did not consistently effect stimulu

67 ck increases in excitability (i.e. increased input resistance and elicited spike rate) of the B cell

68 ial, which was accompanied by an increase in input resistance and evoked firing.

69 aining also enhanced the excitability (i.e., input resistance and evoked spike rate) of the B photore

70 siological recordings showed a decreased DMV input resistance and excitability due, in part, to the e

71 I mPFC pyramidal neurons exhibited increased input resistance and excitability, as well as facilitate

72 ed the resting membrane potential, decreased input resistance and facilitated action potential genera

73 yer 4 FS cells exhibited significantly lower input resistance and faster time constants than layer 4

74 f taurine (10-100 microM) decreased neuronal input resistance and firing frequency, and elicited a st

75 rneurons by exhibiting a significantly lower input resistance and hyperpolarized membrane potential,

76 ipoRon, which were associated with increased input resistance and hyperpolarized resting membrane pot

77 epolarized the cells, increased the neuronal input resistance and increased firing of action potentia

78 olarizing the membrane potential, decreasing input resistance and inward calcium currents, increasing

79 neurons showed no significant differences in input resistance and local temporal summation between th

80 The mean resting membrane potential, input resistance and membrane time constant of motoneuro

81 cally, we observed significant reductions in input resistance and membrane time constant of nearly 10

82 sed on modeling the changes that we found in input resistance and membrane time constant with a three

83 that loss of DPP6 has additional effects on input resistance and Na(+) channel conductance that comb

84 NA also significantly increases input resistance and reduces rheobase.

85 the postsynaptic depolarization, increase in input resistance and reduction in spike frequency adapta

86 urons by increasing the rheobase, decreasing input resistance and repetitive firing, reducing PSPs am

87 asis of differences in membrane capacitance, input resistance and response to hyperpolarizing current

88 um channels determine membrane potential and input resistance and serve as prominent effectors for mo

89 pyridine inhibited leptin-induced changes in input resistance and spike rate.

90 n of resting potential, along with increased input resistance and temporal summation of excitatory in

91 Blockade of I(h) by ZD7288 increased the input resistance and temporal summation of simulated EPS

92 depolarized resting potential, and decreased input resistance and temporal summation.

93 fects on Ca(2+) channels, action potentials, input resistance and the medium afterhyperpolarization.

94 ilar effects: (i) a significant reduction in input resistance and the membrane time constant and (ii)

95 included a mean resting membrane potential, input resistance and time constant of -62 +/- 6 mV, 410

96 The input resistance and time constant of CA3 neurons increa

97 potentials, thresholds for spike activation, input resistances and action potential durations.

98 Male motoneurons have lower input resistances and larger membrane capacitances than

99 es tend to be electrically active, with high input resistances and long membrane time constants, whil

100 Input resistances and membrane time constants averaged 2

101 maturation, IML interneurons displayed lower input resistances and more hyperpolarized resting membra

102 wing exposure to KCl, neurones exhibit lower input resistances and resting potentials, and require mo

103 longs action potential duration, whereas the input resistances and the current thresholds for action

104 ion of the resting potential, an increase in input resistance, and a dramatic decrease in spike-frequ

105 zed resting membrane potential, an increased input resistance, and a higher incidence of sustained fi

106 a eye reveal a learning specific increase of input resistance, and a reduction of voltage-dependent p

107 y extent and location of axonal projections, input resistance, and age, and are recruited along the a

108 h dendritically recorded membrane potential, input resistance, and amplitude of somatic and dendritic

109 slow membrane depolarization, an increase in input resistance, and an intense neuronal discharge.

110 evealed that N/OFQ hyperpolarized, decreased input resistance, and blocked the firing of action poten

111 rties, including resting membrane potential, input resistance, and current-evoked firing.

112 embrane potentials of the neurons, decreased input resistance, and decreased the number of action pot

113 input with a reduced frequency, showed lower input resistance, and had an increased number of proprio

114 d by cell membrane depolarization, decreased input resistance, and increased excitability.

115 dependent membrane depolarization, decreased input resistance, and increased firing rate of identifie

116 less, these changes in dendritic morphology, input resistance, and inhibitory signaling properties ma

117 I(Klgt); it is accompanied by an increase in input resistance, and it appears at potentials close to

118 ng of the membrane time constant, decreasing input resistance, and lowering of the resting membrane p

119 ained changes in resting membrane potential, input resistance, and membrane fluctuations robustly mod

120 rane properties (resting membrane potential, input resistance, and membrane time constant) measured u

121 ramatic reductions in somatic EPSP duration, input resistance, and membrane time constant.

122 arization, a persistent decrease in neuronal input resistance, and shunting of PSPs; all effects are

123 s to PGE2 were associated with a decrease in input resistance, and the amplitude of inward current wa

124 unctional properties, such as axonal extent, input resistance, and the speed at which they are recrui

125 s accompanied by diminished somatic membrane input resistance, and was enhanced when Ca(2+)-sensitive

126 rization of membrane potential and increased input resistance are markedly potentiated by an MF.

127 In cells expressing Kv4.2W362F, input resistances are increased and (current) thresholds

128 In neurons expressing Kv4.2DN, input resistances are increased and the (current) thresh

129 The low input resistance arose in part from an inwardly rectifyi

130 Ts65Dn mouse model of DS, GCs have a higher input resistance at voltages approaching the threshold f

131 d excitability and found that it reduced the input resistance by 10% and the efficacy of synaptic inp

132 ar-complete depolarization and decreased the input resistance by 89%.

133 DA receptor activation enhanced neuronal input resistance by a postsynaptic mechanism (via DA D2

134 larized trigeminal motoneurons and increased input resistance by suppressing a Ba2+-sensitive leakage

135 WIN-2 also reduced input resistance calculated from depolarizing current in

136 explain how cells, despite severely reduced input resistance, can still fire briskly and have IPSPs

137 ect was attributable to a large reduction in input resistance caused by a combination of the opening

138 The small decrease in input resistance caused by the RW responses is not consi

139 The low input resistance causes rapid synaptic currents to gener

140 pound-conditioned animals, but no additional input resistance changes were observed.

141 mine produced a rapid and reversible drop in input resistance, clamping the membrane potential below

142 -8 caused a significant increase in membrane input resistance compared with leptin or CCK-8 alone.

143 rane potentials and a tendency toward higher input resistance compared with pyramidal neurons from co

144 Instantaneous membrane input resistance, computed from hyperpolarizing current

145 l experiments record a decrease in embryonic input resistances concomitant with early cleavage stages

146 d membrane hyperpolarisation and decrease in input resistance consistent with its known effects on me

147 eurons, but led to a significant increase in input resistance, consistent with the block of gap junct

148 vivo loss of Kv4.2, for example, alters the input resistances, current thresholds for action potenti

149 Most notably, neuronal input resistances declined almost eightfold during the f

150 ith hypoxia by an average of about 20 mV and input resistance decreased by 71% from control.

151 The input resistance decreased significantly to 59+/-18% at

152 larized mossy fiber boutons, increased their input resistance, decreased spike width and attenuated a

153 rons, V1 neurons have a significantly higher input resistance, depolarized resting membrane potential

154 ude in all four groups of cells, as were the input resistances determined over the voltage range -100

155 howed a small depolarization and decrease in input resistance during osmotic stimulation with NaCl or

156 n of EPSPs and revealed an alteration in the input resistance during the ISI.

157 This leads to depolarization, increased input resistance, enhanced spiking, and slowed decay of

158 remental increase in the excitability (i.e., input resistance, evoked spike frequency) of B photorece

159 pyramidal neurons typically displayed higher input resistances, faster time constants, smaller spike

160 trong hyperpolarization and restoring a high input resistance for subsequent depolarization.

161 There was no change in input resistance for this group.

162 +/- 1 to -73 +/- 2 mV and nearly doubled the input resistance from 1.3 to 2.2 GOmega.

163 d recording synaptic currents and changes in input resistance from each class of motor neuron.

164 ysiological recording, CRY prevents membrane input resistance from falling to low levels in a light-i

165 icocollicular neurons had, on average, lower input resistance, greater hyperpolarization-activated cu

166 miniature excitatory postsynaptic currents, input resistance, hippocampal long-term potentiation, an

167 We observed reduced input resistance, hyperpolarized membrane potential, and

168 ed hyperexcitability with increased membrane input resistance, hyperpolarized threshold, and larger a

169 urons from other VTA neurons by size, shape, input resistance, I(h) size, or spontaneous firing rate.

170 nance frequency and significant increases in input resistance, impedance amplitude and action-potenti

171 ed in a concentration-dependent reduction in input resistance in 67.5% of the neurons in the PBN (73.

172 onist muscimol resulted in a decrease of the input resistance in all neurons tested.

173 sing an increased membrane time constant and input resistance in association with an increase in EPSP

174 ed inward currents (at -40 mV) and increased input resistance in both standard whole-cell recordings

175 and chloride-dependent reduction in membrane input resistance in both types of neuron.

176 der two-photon guidance, typically had a low input resistance in comparison with the other cells in t

177 ceptor antagonists selectively augmented SGC input resistance in controls but not in head-injured rat

178 istent firing and the underlying increase in input resistance in deep pyramidal cells in temporal and

179 otassium conductance, membrane potential, or input resistance in SCN neurons in vitro using whole-cel

180 nels contribute to the resting potential and input resistance in several neuron types, including hipp

181 tified, we determined in vivo the changes in input resistance in the neuronal elements of the pacemak

182 The ability of CRY to maintain high input resistance in these non-excitable cells also requi

183 illator activity, caused significantly lower input resistances in relay and pacemaker cells, respecti

184 hat was invariably associated with decreased input resistance; in voltage clamp, halothane induced an

185 Concurrently, the input resistance increased by 31 +/- 2.0% and the time c

186 This large reduction of input resistance increased the amount of current necessa

187 his idea, a genetic manipulation that lowers input resistance increases unitary synaptic currents.

188 t, for DR neurons strychnine increases their input resistance, induces membrane depolarization, and c

189 variability in their physiologic properties: input resistance (IR) ranged from 250 MOmega to 3 GOmega

190 X and nimodipine) of -55 to -50 mV, although input resistance is high (9.5 +/- 4.1 GOmega).

191 d by a tonic (intrinsic) reduction in M-cell input resistance, likely mediated by a Cl(-) conductance

192 Not only does the low input resistance make individual excitatory postsynaptic

193 ized resting membrane potentials and reduced input resistance, mimicking properties of pyramidal neur

194 We measured six intrinsic properties (input resistance, minimum membrane potential, firing rat

195 ent component leading to a mean steady-state input resistance of 10.6 M omega.

196 ard rectification led to a mean steady-state input resistance of 13.3 M omega.

197 g of a fast component leading to a mean peak input resistance of 14.5 M omega, and a slow time-depend

198 e potential of -52 +/- 3.6 mV and a membrane input resistance of 233 +/- 38 M omega.

199 nes were highly non-linear, with a mean peak input resistance of 254.4 M omega and a mean steady-stat

200 .6 +/- 1.0 mV afterhyperpolarization, a mean input resistance of 335 +/- 26 M Omega, and were capable

201 V, -20 pA current injections revealed a mean input resistance of 615 MOmega and a mean time constant

202 nce of 254.4 M omega and a mean steady-state input resistance of 80.6 M omega between -60 and -75 mV.

203 rane time constant of 12.9 +/- 7.7 ms and an input resistance of 86.4 +/- 29.2 M omega.

204 The input resistance of CA3 neurons was increased by the app

205 nsition from SWS to the activated state, the input resistance of cortical neurons gradually increased

206 ach takes advantage of the fact that the low input resistance of electrically passive astroglia allow

207 , and decreased the firing frequency and the input resistance of Im cells via dopamine type 1 recepto

208 on types, a process accompanied by decreased input resistance of individual HVC neurons.

209 This matching may compensate for a lower input resistance of larger dendrites to produce uniform

210 d be achieved based on the difference in the input resistance of PG cells versus excitatory neurons a

211 In either case, the input resistance of the dopaminergic neurons was dramati

212 level, cooling caused a distinct increase in input resistance of the M-cell and in the dendritic spac

213 s was found to be the case regardless of the input resistance of the motoneuron, the contraction spee

214 associated with an increase in the apparent input resistance of the neurone, likely due to the suppr

215 The input resistance of the neurons in the DL quadrant was s

216 nt is not imprinted by the topography or the input resistance of the V2a interneurons.

217 NL and NM neurons had input resistances of 30.0 +/- 19.9 Momega and 49.0 +/- 2

218 quantified the influence of a difference in input resistances of electrically coupled neurons and in

219 As a result of the low input resistances of octopus cells, action potential ini

220 red milliseconds despite their extremely low-input resistances of only few megaohms and high synaptic

221 ccompanied by increases and decreases in the input resistances of type B and A photoreceptors, respec

222 y, however, caused a significant increase in input resistance only in relay cells.

223 No differences in membrane potential, input resistance or action potential parameters could be

224 gnificantly affected the membrane potential, input resistance or AHPslow.

225 responses were accompanied by a decrease in input resistance or an increase in conductance, respecti

226 without changes in the postsynaptic membrane input resistance or EPSC rise and decay time suggested t

227 was independent of any consistent change in input resistance or firing rate.

228 ly firing OT and VP neurons without altering input resistance or firing rate.

229 nM NMC caused no changes in either neuronal input resistance or membrane potential despite the clear

230 rred without any detectable change in either input resistance or membrane potential of BA1.

231 ne potential, membrane time constant, neuron input resistance, or action potential characteristics.

232 gic inhibition, glutamate receptor function, input resistance, or action potential parameters were ob

233 -4 was found relative to membrane potential, input resistance, or AMPA-evoked currents.

234 eated neurons in resting membrane potential, input resistance, or the amplitude or duration of the me

235 tions, without affecting membrane potential, input resistance, or the low-threshold calcium current,

236 l in their mean resting membrane potentials, input resistances, or thresholds to electrical activatio

237 phology was reflected by differences in peak input resistance, outward rectification and spike after-

238 resting membrane potential and a decrease in input resistance, particularly in response to prolonged

239 tential (pEC50 = 11.2) and a decrease in the input resistance (pEC50 = 12.7).

240 Specifically, input resistance progressively increased by 70% after 50

241 fects of hypoxia on membrane potential V(m), input resistance R(m), rheobase, and action potential ch

242 pA) required to evoke action potentials, as input resistance (R(in)) settled from embryonic values g

243 membrane potential, time constant (tau), and input resistance (R(in)).

244 ng membrane potential (RMP; 7 mV) and higher input resistance (R(in); 46 M measured from RMP) observe

245 naffected over 10-15 min recording, although input resistance (R(N)) was slightly increased ( approxi

246 gical properties included resting potential, input resistance (R(N)), threshold (rheobase, I(Rh)), an

247 thods based on electrode series and cellular input resistances (R(el) and R(in)).

248 ucose responsiveness (membrane potential and input resistance responses were blunted 66 and 80%, resp

249 C-SCs, while other cellular gradients [e.g., input resistance (Ri), action potential properties] rema

250 recordings revealed regional differences in input resistance (Rin) and membrane polarization rates (

251 ts determine membrane properties such as the input resistance (Rin) and the membrane time constant (t

252 in a topographic gradient according to their input resistance (Rin) at different swimming strengths a

253 e same fibres enabling measurements of fibre input resistance (Rin) in between action potential train

254 reases in excitation preferentially to lower input resistance (Rin) motoneurons, whereas inhibition u

255 ippocampal slices, monitored Vm and measured input resistance (Rm) with periodic injections of negati

256 The mean input resistance (RN) for all cells in this study was 52

257 In addition, DA reversibly decreased the input resistance (RN) of these cells.

258 luding whole-cell membrane capacitance (Cm), input resistance (Rn), and time constant (tau), were mea

259 n in HMs, accompanied by an increase in peak input resistance (RN).

260 e identified by their more negative Em, high input resistance (Ro) and time-dependent rectification i

261 Their resting potential (Vm) and input resistance (Ro) were thus measured.

262 w that dendritic GABA(B)Rs also decrease the input resistance, shorten the AP afterdepolarization, an

263 s, abnormally high motoneurone excitability (input resistance significantly higher compared with cont

264 ical properties (resting membrane potential, input resistance, single spike, and repetitive firing pr

265 ology, including resting membrane potential, input resistance, spike threshold, depolarization-induce

266 X-resistant and was accompanied by decreased input resistance, suggesting that dopamine opens a K(+)

267 ization was paralleled by an increase of the input resistance, suggesting the blockade of a backgroun

268 rons are more depolarized and possess higher input resistance than other spinal alpha-motoneurons.

269 Preterm MNTB neurons had a higher input resistance than term neurons and fired in bursts,

270 the membrane depolarization and increase in input resistance that are characteristic of the very slo

271 ted decreased cell capacitance and increased input resistance that became more severe with age.

272 e hyperpolarization and decrease in membrane input resistance that were observed in response to remov

273 ults suggest that in cells exhibiting a high input resistance, the primary effect of activating TRPC6

274 hat establish resting membrane potential and input resistance; their modulation provides a prevalent

275 ilar effects on neuronal properties reducing input resistance, time constant and increasing capacitan

276 c properties of dentate granule cells (i.e., input resistance, time constant, action potential genera

277 Resting potential, input resistance, time constant, electrotonic length, an

278 ls of GABA can profoundly alter the membrane input resistance to affect cellular excitability.

279 ld) have comparable membrane capacitance and input resistance to neurons from mice 2-7 months of age

280 brane potential depolarization and increased input resistance, two critical elements generating persi

281 rregular trains of simulated EPSCs increased input resistance up to 60%, effects that accumulated and

282 Cells had input resistances up to 130 M omega and fired regular, o

283 polarization (up to 8 mV) and a reduction in input resistance (up to 11%).

284 The mean input resistance was 315.5 +/- 54.8 MOmega.

285 Although the input resistance was a reliable indicator of maturation,

286 activity, no hyperpolarization or change in input resistance was evoked by either MTII or AgRP, sugg

287 annel blockade, indicating that depolarizing input resistance was increased.

288 increase in the synaptic noise; and (8) the input resistance was not affected after hypocretin-1.

289 tic background conductance such that somatic input resistance was reduced 5-fold.

290 Input resistance was reversibly reduced by 58% and, in m

291 EtOH effects on input resistance were distributed differentially among t

292 The RP and input resistance were not significantly different betwee

293 in either the baseline membrane potential or input resistance were observed.

294 , but peak conductance, current density, and input resistance were smaller than in preBotC region cel

295 tributed to the very low potassium-selective input resistance, which in turn hyperpolarized the resti

296 KA caused a decrease in pyramidal cell input resistance, which was reduced by GABA(A) receptor

297 DMV neurones had decreased excitability and input resistance with a reduced ability to fire action p

298 ption of a small but significant increase in input resistance with age.

299 ng the neurons and increasing their membrane input resistance, with no significant effects on action

300 re complex dendritic arborization and higher input resistance, yet showed lower light sensitivity and