ライフサイエンスコーパス: insulator

1 urn the trivial monolayer into a topological insulator.

2 ce properties of the classic silicon dioxide insulator.

3 to position, producing a correlated, or Mott insulator.

4 number nM = -2, but not a strong topological insulator.

5 in the proximity with sulfur, a diamagnetic insulator.

6 e the Neel temperature, indicative of a Mott insulator.

7 aracteristics similar to that of topological insulators.

8 e examples, such as graphene and topological insulators.

9 ignificant attention on magnetic topological insulators.

10 stal, one of the most insulating topological insulators.

11 netic domain walls in quantum anomalous Hall insulators.

12 using imperfect two-dimensional topological insulators.

13 und room temperatures, are paramagnetic Mott insulators.

14 area referred to as valley Hall topological insulators.

15 d by the quantum Hall effect and topological insulators.

16 al confirmation of confinement effects in 2D insulators.

17 the concept of acoustic Floquet topological insulators.

18 to its imperfections in contrast to ordinary insulators.

19 one-dimensional chiral symmetric topological insulators.

20 ther tuning of the properties of topological insulators.

21 m Hall effect, quantum spin liquids and Mott insulators.

22 magnetic properties of magnetic topological insulators.

23 ey are multiorbital strongly correlated Mott insulators.

24 uch as chiral density waves and quantum Hall insulators.

25 ce measurements of a topological crystalline insulator, (001)-oriented Pb1-x Sn x Se in zero and high

26 e domain wall state in a charge-density-wave insulator 1T-TaS2 decomposes into two localized but nonc

27 n domain walls in a Mott-charge-density-wave insulator 1T-TaS2 using scanning tunneling spectroscopy.

28 9 imprint control region that abolishes CTCF insulator activity, resulting in biallelic Igf2 expressi

29 that is a room-temperature antiferromagnetic insulator (AFM-I) and the perovskite SrCoO3 that is a fe

30 The magnetic insulator alpha-RuCl3 is thought to realize a proximate

31 Removal of an upstream CTCF-binding insulator alters the interaction profile, but has little

32 ndicate that the charge gap between the Mott insulator and metallic states can be closed near 6 GPa.

33 nexpected since bismuth is not a topological insulator and the surface is not suspended but in contac

34 s, protecting states such as the topological insulators and Dirac semimetals.

35 tions, which are magnons in the undoped Mott insulators and evolve into paramagnons in doped supercon

36 anscription, including promoters, enhancers, insulators and locus-control regions.

37 play a key role in the optical properties of insulators and semiconductors.

38 Since the discovery of topological insulators and semimetals, there has been much research

39 tigation of electrically tunable topological insulators and semimetals.

40 vide insight into materials such as magnetic insulators and spin liquids and aid optimization of spin

41 hare fundamental properties with topological insulators and that topology plays an unexpected role in

42 , including promoters, enhancers, silencers, insulators and transcription factor binding sites; all o

43 y features of the electronic structure of an insulator (and its evolution) under realistic conditions

44 enotoxicity of foamy virus, identify a novel insulator, and support the use of foamy virus as a vecto

45 otential of foamy virus, identifies a unique insulator, and supports the use of foamy virus as a vect

46 theory sheds new light on known topological insulators, and can be used to predict many more.

47 Topological insulators are a new class of materials with an insulati

48 Three-dimensional topological insulators are bulk insulators with Z2 topological elect

49 Topological insulators are potentially transformative quantum solids

50 iconductors (without or with an intermediate insulator) are among the main possibilities towards econ

51 Three dimensional topological insulators, as a new phase of quantum matters, are chara

52 tic (FM) metal to an antiferromagnetic (AFM) insulator at [Formula: see text]21 GPa whose AFM spin co

53 this method found that upon doping the Mott insulator at low temperature a pseudogap phase appears.

54 etic order at the surface of the topological insulator at specific locations without introducing spin

55 hotocurrent in three-dimensional topological insulators at room temperature.

56 ons, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated.

57 with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emit

58 In insulator-based dielectrophoresis (iDEP), the required n

59 uspended in aqueous solutions manipulated by insulator-based dielectrophoresis (iDEP).

60 ection of DNA using alternating current (AC) insulator-based dielectrophoresis.

61 hermoelectric figure-of-merit in topological-insulator-based nanomaterials through doping.

62 of the thin-film, ferromagnetic topological insulator (Bi, Sb)2-x V x Te3.

63 ctivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbS

64 ite-surface coupled films of the topological insulator Bi2Se3.

65 l composition of the Cr-doped 3D topological insulator Bi2Se3.

66 +yTe and thin films grown on the topological insulator Bi2Te3 is canted out of the high-symmetry dire

67 erlattices at the surface of the topological insulator Bi2Te3.

68 sformation vectors with or without the gypsy insulator bracketing the two expression cassettes: uni-d

69 the quantum Hall effect and topological bulk insulator breaks for specific field intervals within the

70 eral method to decouple the two roles of the insulator by employing localized dielectric breakdown.

71 ic resonance when in contact with a magnetic insulator by observing an anomalous Hall-like effect, wh

72 good conductors (by hole tunneling) but good insulators (by electron and/or hole drift conduction).

73 Whether an actual Mott insulator can be realized in the phase diagram of the ir

74 Utilizing the MEF of a magnetic insulator can induce magnetic order and valley and spin

75 t the metallic surface states in topological insulators can exhibit both strong electron-hole asymmet

76 ase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2

77 odels to predict important properties: metal/insulator classification, band gap energy, bulk/shear mo

78 ng metal-insulator-metal and insulator-metal-insulator configurations.

79 teractions, we observed two-dimensional Mott insulators containing over 400 atoms.

80 l2O3) though paradigmatically known to be an insulator could induce an immense increase in the select

81 "insulating" phase as indicated by a metal-"insulator" crossover (a mystery for over 30 years), and

82 emonstrating that the long mysterious metal-"insulator" crossover is not due to the charge density wa

83 nsity wave (DW) gapping regarding the metal-"insulator" crossover.

84 d conduction in thin topological crystalline insulator crystals.

85 Brd2 is associated with the chromatin insulator CTCF and the cohesin complex to support cis-re

86 ogical ones by removing the subset of atomic insulators, defined by the existence of localized symmet

87 riterion for inversion-symmetric topological insulators, demonstrate that symmetry labels can sometim

88 The results showed that the gypsy insulator does promote the expression of two transgenes

89 either strongly spin-polarized ferromagnetic insulators (e.g. EuO, GdN) or halfmetallic ferromagnets

90 foamy virus long terminal repeats contain an insulator element that binds CCCTC-binding factor and re

91 map to DNA elements that resemble classical insulator elements: short genomic regions sensitive to D

92 metal, and SrCoO2.5 is an antiferromagnetic insulator-enable an unusual form of magnetoelectric coup

93 field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin genera

94 This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exc

95 The electronic structure of an insulator encodes essential signatures of its short-term

96 rate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (>14 T) with

97 ices, we propose two-dimensional topological insulator field-effect transistors that switch based on

98 ator-semiconductor architecture, in which an insulator film serves as a protection layer, can prevent

99 use it to investigate magnons in a magnetic insulator, finding that the magnon chemical potential ca

100 st experimental realization of a topological insulator for electromagnetic waves based on engineered

101 rk provides a new application of topological insulators for terahertz technology.

102 energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy sing

103 conductor-related materials, spin-orbit Mott insulators, frustrated magnets, and dilute magnetic allo

104 ith a demethylating agent partially restores insulator function and downregulates PDGFRA.

105 a support that CTCF mediates transcriptional insulator function through enhancer blocking but not as

106 t evidence for the formation of an excitonic insulator gap in an inverted InAs/GaSb quantum-well syst

107 e magnetic correlations evolve in doped Mott insulators has greatly improved our understanding of the

108 Particularly, most of the topological insulators have narrow band gaps, and hence have promisi

109 This material would ideally be a bulk insulator, have a surface state Dirac point energy well

110 on decay at a magnetic-insulator/topological-insulator heterojunction.

111 ormed by the quintuple layers of topological insulators holds great potential for further tuning of t

112 tions show that Mg(OH)2 is a 6 eV direct-gap insulator in 2D, and its optical band gap displays stron

113 marium hexaboride (SmB6), a well-known Kondo insulator in which the insulating bulk arises from stron

114 erparts of the quantum spin-Hall topological insulators in condensed matter.

115 ntial for siloxanes to function as molecular insulators in electronics.

116 f multiple Nups at promoters, enhancers, and insulators in the Drosophila genome.

117 we identified transcriptional enhancers and insulators in these cells and placed them within the con

118 se a model in which decompaction of boundary-insulator-interband regions drives the organization of i

119 Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with

120 tential well that forms at the semiconductor/insulator interface and induces charges of opposite pola

121 acteristic hole density at the semiconductor/insulator interface.

122 can provide a knob to drive frustrated Mott insulators into a chiral spin liquid, realizing an elusi

123 nd that the dynamics of a driven Kagome Mott insulator is well-captured by an effective Floquet spin

124 semimetals, Dirac semimetals or topological insulators, is emerging as one of the major topics in ma

125 be either a superconductor or a topological insulator, it is very rare that both states exist in one

126 screening length of surface charges at metal-insulator junctions (1-3) , although this effect can be

127 r, progress in nanoscale electronics demands insulators just as it needs conductors.

128 To do this we replace the insulator layer in a typical field-activated organic lig

129 ing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertic

130 tion of a GL promoter downstream of the CTCF insulator led to premature activation of the ectopic pro

131 ing that even the simplest antiferromagnetic insulator like MnO, could display a magnetically induced

132 inal R-loops associate with an enhancer- and insulator-like state and define a broad class of transcr

133 show that this effect is mediated by a 36-bp insulator located in the foamy virus long terminal repea

134 or the wonderful properties of a topological insulator - material which is insulating in the bulk but

135 The discovery of topological insulators, materials with bulk band gaps and protected

136 charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-ti

137 The heat conductivity of such metal-insulator-metal (MIM) nanolaminate coatings was measured

138 engineer plasmonic substrates based on metal-insulator-metal (MIM) plasmon resonances with ultra-shar

139 electric composites as well, including metal-insulator-metal and insulator-metal-insulator configurat

140 res with metal-oxide-semiconductor and metal-insulator-metal configurations.

141 Ultra-thin nanostructured metal-insulator-metal geometries result in the excitation of h

142 quantized conductance filaments within metal-insulator-metal heterostructures.

143 anadium dioxide, which exhibits a reversible insulator-metal transition above room temperature, has b

144 behavior of the current at the dynamic Mott insulator-metal transition and calculate scaling exponen

145 conductivity in solid O2 on the border of an insulator-metal transition at high pressures close to 96

146 Sb2Se3 up to 10 GPa, i.e. the absence of an insulator-metal transition in Sb2S3 up to that pressure.

147 illator based dynamical system that exploits insulator-metal transition in Vanadium Dioxide (VO2) to

148 Neither the insulator-metal transition nor superconductivity are und

149 VO2 -TiO2 -VO2 nanostructure has a different insulator-metal transition temperature that depends on t

150 irection by focussing on the pressure-driven insulator-metal transition using a combination of first-

151 ronic response across the filling-controlled insulator-metal transition.

152 as well, including metal-insulator-metal and insulator-metal-insulator configurations.

153 Recently, GPs in a graphene/insulator/metal configuration have been predicted to exh

154 erties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silic

155 the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/gra

156 he latter is yttrium iron garnet, a magnetic insulator (MI).

157 In the case of magnetic insulators (MIs), although charge currents cannot flow,

158 Upon doping, Mott insulators often exhibit symmetry breaking where charge

159 ultaneously growing several areas of SiGe-on-insulator on a single wafer, with the ability to tune th

160 cative of the esoteric nature of topological insulators or of a fundamental problem with the current

161 the notion of filling-enforced quantum band insulators, our theory identifies symmetry settings with

162 ba type topological trivial to a topological insulator phase at 2 GPa, which is caused by an energy g

163 The excitonic insulator phase has long been predicted to form in proxi

164 s are VO2 and NdNiO3 , which undergo a metal-insulator phase transition (MIT), the origin of which is

165 ng the occurrence of a topological excitonic insulator phase.

166 superconducting state at H < Hc from a "Hall-insulator" phase in which rhoxx --> infinity as T --> 0

167 luid-dispersed 2D nano-objects on silicon-on-insulator photonics platform.

168 sented circulator is compact, its silicon-on-insulator platform is compatible with both superconducti

169 Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrated a coupli

170 ated here, by simulations, in the silicon on insulator platform.

171 gically important prototypical and pervasive insulator, polyethylene (PE), and at electrode/PE interf

172 Topological crystalline insulators possess metallic surface states protected by

173 ations predicted for topological crystalline insulators.Probing optical and transport properties of t

174 mentary metal-oxide semiconductor silicon-on-insulator process.

175 In this article, we identify the insulator protein BEAF-32 as a regulator of Hippo pathwa

176 ot BRD4, co-localizes with the architectural/insulator protein CCCTC-binding factor (CTCF) genome-wid

177 ts in new occupancy of BDNF chromatin by DNA insulator protein CCCTC-binding factor (CTCF), which is

178 The insulator protein CTCF and cohesin control domain locati

179 ntally specific role for a broadly expressed insulator protein.

180 mising binding of this methylation-sensitive insulator protein.

181 e digestion that are strongly bound by known insulator proteins and are frequently located between di

182 s collectively known as photonic topological insulators (PTIs) can be employed to overcome this funda

183 Insertion of an insulator reduces the number of bursts and the correspon

184 he surface states in topological crystalline insulators remains a challenge.

185 The physics of doped Mott insulators remains controversial after decades of active

186 masks a fundamental shortcoming: topological insulators represent only a few hundred of the 200,000 s

187 nsistors made of two-dimensional topological insulator ribbons accounting for scattering with phonons

188 resented based on a deeply depleted graphene-insulator-semiconducting (D(2)GIS) junction, which offer

189 programmable field effect-based electrolyte-insulator-semiconductor (EIS) sensor constructed with a

190 non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the

191 A metal-insulator-semiconductor architecture, in which an insula

192 Thermally drawn metal-insulator-semiconductor fibers provide a scalable path t

193 these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si s

194 mechanism is systematically probed in metal-insulator-semiconductor Schottky junction cells compared

195 iconductor, semiconductor-semiconductor, and insulator-semiconductor, are synthesized directly throug

196 lly, for the surface states of a topological insulator/semiconductor interface, and postulate its uni

197 Can we use the Drosophila gypsy insulator sequence to increase the expression of the two

198 opsis genes, PP2A-C5 and AVP1, and the gypsy insulator sequence were used to construct six transforma

199 ted surface states in this topological Kondo insulator SmB6.

200 The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are her

201 ectrode and redox species in solution (metal-insulator-solution tunneling) is expected to play a prom

202 n early embryos and was hypothesized to have insulator-specific functions, can compensate for the los

203 e phases-HSrCoO2.5 is a weakly ferromagnetic insulator, SrCoO3-delta is a ferromagnetic metal, and Sr

204 al coupling between the 3d antiferromagnetic insulator SrMnO3 and the 5d paramagnetic metal SrIrO3 is

205 ept, we propose an oxide-semiconductor-oxide-insulator stack and discuss the useful optical propertie

206 l, transforming the system into an excitonic insulator state in which a gap spontaneously appears at

207 ype topological trivial phase to topological insulator state then further proceeding to superconducti

208 More than a dozen different topological insulator states are predicted to emerge, including the

209 l semimetal, Dirac semimetal and topological insulator states in a prototypical three-dimensional (3D

210 y band gap of this well-known 3D topological insulator still remain unclear.

211 tailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this pr

212 which are monolithically grown on silicon-on-insulator substrates.

213 tic counterparts of conventional topological insulators such as Bi2Te3, a long-range ferromagnetic st

214 Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platfo

215 The substrates used range from insulators such as industry standard high-k dielectric H

216 l two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3.

217 we do not find evidence of this being due to insulator-superconductor transition.

218 spite of resisting localization, topological insulator surface electrons can be reshaped by defects i

219 the spin-momentum locking of the topological insulator surface greatly enhances the magnetic ordering

220 -earth element) and V2O3 are archetypal Mott insulator systems.

221 this material as a high-quality topological insulator that can be reliably grown as bulk single crys

222 vskite iridates realize a rare class of Mott insulators that are predicted to be strongly spin-orbit

223 ve, we review recent progress in topological insulators, the quantum anomalous Hall effect, chiral to

224 unique quantum phenomena such as topological insulators, the Rashba effect, or p-wave superconductivi

225 a conducting interface between a topological insulator thin film and a semiconductor substrate can be

226 he hybrid system of a quantum anomalous Hall insulator thin film coupled with a superconductor.

227 c dopants into three-dimensional topological insulator thin films has recently led to the realisation

228 eveloping efficient high-temperature thermal insulators through use of the low-bandgap semiconductor

229 Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar un

230 of a 3D time-reversal-invariant topological insulator (TI) to produce paradigmatically different ind

231 e surface of a three-dimensional topological insulator (TI), subject to an external voltage.

232 Topological insulators (TIs) are bulk insulators with exotic 'topolo

233 A prominent feature of topological insulators (TIs) is the surface states comprising of spi

234 Topological insulators (TIs) possess spin-polarized Dirac fermions o

235 y proposed experiments involving topological insulators (TIs) require spatial control over time-rever

236 ch has been realized in magnetic topological insulators (TIs), is the key to applications of dissipat

237 e electrons in three-dimensional topological insulators (TIs), their spin is locked to the transport

238 metal dichalcogenides (TMDs) and topological insulators (TIs).

239 hat pressure drives a transition from a Mott insulator to a metal at 50 GPa.

240 e to the evolution from an antiferromagnetic insulator to a metallic phase.

241 ped fullerides show a transition from a Mott insulator to a superconductor for the first time in thre

242 This approach allows the insulator to be thick, which enhances stability, while e

243 Nitric acid exposure induced an insulator to metal transition and reduced the positive M

244 he enhancement of catalytic activity and the insulator to metal transition through tuning the electro

245 CNT fiber, already on the metal side of the insulator to metal transition, had positive MR without s

246 eir electronic structure ranges from trivial insulators, to semiconductors with tunable gaps, to semi

247 The insulator-to-metal phase transition in vanadium dioxide

248 the vanadium M2,3 edge is used to track the insulator-to-metal phase transition in VO2 This techniqu

249 We find that the insulator-to-metal phase transition occurs on a timescal

250 applications due to its electrically induced insulator-to-metal transition (IMT) characteristic.

251 , the AFM-to-FM transition occurs before the insulator-to-metal transition (IMT), which is still cont

252 y, vanadium dioxide (VO2), which exhibits an insulator-to-metal transition, has been recently explore

253 oping induced by La substitution leads to an insulator-to-metal transition.

254 lieve it is likely this relationship between insulators, topological boundaries, and polytene interba

255 ical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction.

256 Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered

257 ort, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nan

258 ear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in

259 The metal-insulator transition (MIT) remains among the most thorou

260 ing nanoparticle (NP) films across the metal-insulator transition (MIT).

261 The superconductor-to-insulator transition (SIT) induced by means such as exte

262 0.78 and 1.86 eV, consistent with a metal-to-insulator transition accompanying the beta-to-gamma phas

263 The metal-insulator transition and the intriguing physical propert

264 esent evidence of a superfluid bose glass to insulator transition at a critical level of this gauge f

265 lattice coupling and indicate that the metal-insulator transition in Cd2Os2O7 is Lifshitz-type.

266 ne with recent models interpreting the metal-insulator transition in terms of bond disproportionation

267 ort measurements reveal a novel semimetal-to-insulator transition in WTe2 layers and an enhanced supe

268 eported that the suppression of the metal to insulator transition induced in VO2 by ionic liquid gati

269 ical concentration of electrons at the metal-insulator transition is described by the Mott criterion.

270 Highly directional-dependent metal-insulator transition is observed in epitaxial double per

271 conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic

272 errimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in si

273 -edge concomitant with the superconductor-to-insulator transition, evidencing modification of the Cu

274 e latter is caused by the 1000 K Mott metal-insulator transition, for which the thermal conductance

275 ng films - that experience superconductor-to-insulator transition.

276 anadium dioxide in the vicinity of its metal-insulator transition.

277 ogue of the interaction-driven Mott metal-to-insulator transition.

278 as also been exploited to induce novel metal-insulator transitions and magnetic reconstructions throu

279 Metal-insulator transitions are one such problem where couplin

280 The gap sizes as well as the metal-insulator transitions are tunable by applying the in-pla

281 icality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping

282 trategies used to tailor vacancies for metal-insulator transitions, electronic structures, and introd

283 such as colossal magnetoresistance and metal-insulator transitions.

284 ne resonator is fabricated from a silicon-on-insulator wafer with a deliberate curvature to form an a

285 amy virus and significantly reduced when the insulator was inserted into the lentiviral LTR.

286 ession was significantly increased when this insulator was removed from foamy virus and significantly

287 ed lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of t

288 ty is delayed, at least in part, by the CTCF insulator, which borders a transcriptionally active doma

289 roken only near the surface of a topological insulator, while leaving its bulk states unaffected.

290 teretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switche

291 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, propose

292 We propose a scheme to realize a topological insulator with optical-passive elements and analyze the

293 vortex chain in a thin film of a topological insulator with proximity-induced superconductivity-a pro

294 the first room-temperature ferroelectric Sn insulator with switchable electric polarization.

295 s a new framework on integrating topological insulators with antiferromagnetic materials and unveils

296 Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface

297 e and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting abov

298 be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topolo

299 -dimensional topological insulators are bulk insulators with Z2 topological electronic order that giv

300 ges resembling a 2+1 dimensional topological insulator without time-reversal symmetry.