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1  colonize multiple niches relies on a large, integrated circuit.
2 ed control of exciton fluxes in an excitonic integrated circuit.
3 for quantum communication on wires within an integrated circuit.
4 sion multiplexing in an all-silicon photonic integrated circuit.
5 stors in a conventional, commercial, silicon integrated circuit.
6 not suitable for insertion in a conventional integrated circuit.
7 n of a high-performance three-stage graphene integrated circuit.
8 -, and space-multiplex reactions on a single integrated circuit.
9 disease and the study of heat dissipation in integrated circuits.
10 -frequency transistors and in graphene-based integrated circuits.
11 in energy applications and in the cooling of integrated circuits.
12  be the next step for quantum computing with integrated circuits.
13 rials and suggest substantial promise for 3D integrated circuits.
14  of densely interconnected three-dimensional integrated circuits.
15 hanics and the electronic behaviors of these integrated circuits.
16 bility that enable high-yield fabrication of integrated circuits.
17  high-performance, stretchable, and foldable integrated circuits.
18 hemical-mechanical planarization of advanced integrated circuits.
19 ccess of silicon-on-insulator (SOI) photonic integrated circuits.
20 existing semiconductor processing for future integrated circuits.
21 rials that can be used to manufacture faster integrated circuits.
22  and potentially higher speeds than Nb-based integrated circuits.
23  components that are lattice-matched to GaAs integrated circuits.
24 cells, and high-permittivity dielectrics for integrated circuits.
25 ns, should allow the creation of all-optical integrated circuits.
26 rconnect structures in future generations of integrated circuits.
27 ovide a new route to low-cost fabrication of integrated circuits.
28 d be compatible with future ultralarge-scale integrated circuits.
29 r increasing the packing density of photonic integrated circuits.
30 ssibilities for group IV lasers for photonic-integrated circuits.
31 ed functionality, performance and scaling in integrated circuits.
32  tremendous potential for its application in integrated circuits.
33 taics, energy storage elements, and bare die integrated circuits.
34 ations in the thermal management of flexible integrated circuits.
35 ital for the next generation of miniaturized integrated circuits.
36 the realization of fully functional photonic-integrated circuits.
37 phene and unique monolithic electro-acoustic integrated circuits.
38 l in all-optical control system and photonic integrated circuits.
39 al adaptive microwave materials, devices and integrated circuits.
40 ntegration of nanoribbons into future hybrid integrated circuits.
41 an attractive route for fabricating photonic integrated circuits.
42 external environment and the current silicon integrated circuits.
43 roadblock toward ultra-high density photonic integrated circuits.
44 s for solution-processable, high-performance integrated circuits.
45 ures, smart skin, and silicon-based photonic integrated circuits.
46 g role in a way similar to that witnessed in integrated circuits.
47 monolayer MoS2 and fabrication of MoS2-based integrated circuits.
48 ich pose difficulties for incorporation into integrated circuits.
49 rgy conversion and the thermal management of integrated circuits.
50 eter distributions, typically inadequate for integrated circuits.
51 ay be utilized to miniaturize radiofrequency integrated circuits.
52 admap towards future ultradense nanophotonic integrated circuits.
53 rest for diffusion barriers in Cu-metallized integrated circuits.
54 synthesis of atomically thin two-dimensional integrated circuits.
55 ieving transistor-type devices for nanoscale-integrated circuits.
56 manufacturing techniques are used to make an integrated circuit able to directly perform non-optical
57  ordered arrays of nanotubes for large-scale integrated circuits, an area in which there has been sig
58      Capacitors are a mainstay of electronic integrated circuits and devices, where they perform esse
59 ions of gallium are NdFeB permanent magnets, integrated circuits and GaAs/GaP-based light-emitting di
60 ical problem of power dissipation in today's integrated circuits and lead to the realization of a new
61 simple enough to be integrated into existing integrated circuits and microelectromechanical system de
62 r, for example, is used for metallization in integrated circuits, and a detailed understanding of nuc
63 mplementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional dev
64 red fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and de
65 in transistors, data storage technologies or integrated circuit architectures alone.
66 ultaneously realize improved devices and new integrated circuit architectures, are required.
67                          Unlike conventional integrated circuit architectures, the layered fabricatio
68                                          The integrated circuits are constructed from lithographicall
69 g dynamic control of optical polarization in integrated circuits are envisioned.
70 mponents fabricated on the same substrate as integrated circuits are important for future high-speed
71 mplementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates
72       The imminent limitations of electronic integrated circuits are stimulating intense activity in
73 up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive bios
74 ng for applications in ambipolar devices and integrated circuits, as well as model systems for fundam
75 nd an interface readout application specific integrated circuit (ASIC).
76  MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanos
77   Our predictions pave way to realization of integrated circuits based on exciton-polariton Rabi osci
78 he development of reliable, high performance integrated circuits based on thin film transistors (TFTs
79                           Here we present an integrated circuit-based electrochemical sensing platfor
80                                         This integrated-circuit-based technique promises wide applica
81 onventional top-down lithography for silicon integrated circuits, but alternative approaches may well
82  are sought for their use in next generation integrated circuits, but several challenges limit the us
83 are based on ubiquitous CMOS technology, the integrated circuits can be readily developed to include
84 ion technology, similar to that used to make integrated circuits, can be employed to make integrated
85 gots into thin wafers for the fabrication of integrated-circuit chips and solar cells.
86 e development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broad
87 of the enteric nervous system, which form an integrated circuit composed of sensory neurons, modulato
88 ng strategy promises low-cost fabrication of integrated circuits, conductive patterns and bio-microar
89 owaves, even those guided by the wires of an integrated circuit, consist of discrete photons.
90 ric laser is implemented based on a photonic integrated circuit consisting of two mutually coupled ac
91 rs that interface with the skin with silicon integrated circuits consolidated on a flexible circuit b
92 sed material usage, especially reductions in integrated circuit content.
93  an important step in quantum computing with integrated circuits, continuing efforts to increase qubi
94                     The implementation of an integrated-circuit CT detector provides substantially sh
95 aw, complexity and functionality of photonic integrated circuits depend on device size and performanc
96 ient travel, image processing and optimizing integrated circuit design, are modeled as complex combin
97 ays, which can introduce complexities in the integrated circuit design.
98 ation dual-source CT system equipped with an integrated-circuit detector was used.
99 e development of sophisticated, high-density integrated circuit devices that may be implanted either
100  with built-in energy needs for operation of integrated circuits driving a microprocessor.
101 te the use of SPICE (Simulation Program with Integrated Circuit Emphasis) for simulating the electric
102  fluidic devices are analogous to electronic integrated circuits fabricated using large-scale integra
103 entz reciprocity in a manner compatible with integrated-circuit fabrication.
104 onal complementary metal-oxide-semiconductor integrated circuit for the first time.
105 e technology, here we demonstrate a class of integrated circuits for executing sequential and paralle
106 o for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentat
107 uch substrates are deployed in, for example, integrated circuits for synthesizing and converting nonp
108  adaptive networks and with state-of-the-art integrated circuit foundries.
109 ogress towards the goal of producing complex integrated circuits from bulk-grown SWNT material.
110 tal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plas
111 between matter qubits and photonic qubits in integrated circuit geometries.
112              As silicon-based transistors in integrated circuits grow smaller, the concentration of c
113 s, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity
114 ystal field-effect transistors in large-area integrated circuits has not been shown.
115 important step in creating a two-dimensional integrated circuit, has so far remained elusive.
116                                     Photonic-integrated circuits have emerged as a scalable platform
117                         Transistors in these integrated circuits have excellent properties: mobilitie
118 en by a rotating magnetic field clock, these integrated circuits have general multiplexing properties
119        Filling this gap is important because integrated circuits have shrunk so far that their active
120 ower complementary metal-oxide-semiconductor integrated circuits, here we report the first successful
121 defects and voids, in the next generation of integrated circuits, higher resolution methods of surfac
122 present a monolithic low-power-consuming PMS integrated circuit (IC) chip capable of dynamic maximum
123 tor and filtered back projection (FBP) or an integrated circuit (IC) detector and iterative reconstru
124 icated by complex and expensive vacuum-based integrated circuit (IC) processes.
125 d and fabricated using a combination of CMOS integrated circuit (IC) technology and a photolithograph
126 ntegrated biosensor based on phototransistor integrated circuits (IC) for use in medical detection, D
127                                In this work, integrated circuits (ICs) for monolithic implementation
128    The success of silicon based high density integrated circuits ignited explosive expansion of micro
129 mission line, it is possible to construct an integrated circuit in which the presence or absence of e
130 that could enable the construction of large, integrated circuits in single cells.
131                 As an additional benefit the integrated circuit inherits the property of amplificatio
132  sensors, two-dimensional photonic crystals, integrated circuit interconnects, and alternative curren
133 tal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscill
134                                           An integrated circuit is powered by adenosine triphosphate
135 ity to control light propagation in photonic integrated circuits is at the foundation of modern light
136 and optical communication is required at the integrated circuit level.
137 aller critical dimensions in next-generation integrated circuit lithography.
138 ddressability and circuit interconnection in integrated circuit manufacturing and nanotechnology.
139  an autonomous miniature temperature logging integrated circuit (Maxim Thermochron iButton) that can
140 eloped to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectro
141 al management in nanoscale systems including integrated circuits might not be as challenging as previ
142 ocesses central to IBD but also provides the integrated circuits of genetic, molecular, and clinical
143 IKKepsilon to target promoters that contain "integrated circuits" of kappaB and AP-1 sites, resulting
144                          The ability to form integrated circuits on flexible sheets of plastic enable
145 An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequenc
146                                          The integrated circuit operates as a broadband radio-frequen
147 o facilitate corrosion of the metal parts of integrated circuits or electronics are drawbacks of aque
148 periodic doubling of transistor densities in integrated circuits over the past fifty years.
149 , including texts, spirals, line arrays, and integrated circuit patterns, with a feature line width o
150 ce, light-emitting diodes (LED), single-chip integrated circuit photodetectors, embedded microcontrol
151              We report a monolithic photonic integrated circuit (PIC) for THz communication applicati
152 used as building blocks to construct complex integrated circuits, promising a viable material for low
153    A wide range of applications in conformal integrated circuits, radio-frequency electronics, artifi
154 ee-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological
155      Continuous ongoing development of dense integrated circuits requires significant advancements in
156 redicting ambitious miniaturization rates of integrated circuits, requires to go beyond the tradition
157  semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which
158 chnologies and increase our understanding of integrated-circuit scaling, here I review fundamental li
159 ere we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circ
160 nts a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED di
161 ont of inexpensive large-area solar cell and integrated circuit technologies because of their reduced
162 e expect to need for the construction of new integrated circuit technologies in 2013 have 'no known s
163 auging progress in the various semiconductor integrated circuit technologies is the spacing, or pitch
164        Promising ingredients for advances in integrated circuit technology are nanowires, molecular e
165         Combining biomolecular function with integrated circuit technology could usher in a new era o
166 , on-chip devices compatible with electronic integrated circuit technology offer great advantages in
167                                    Improving integrated circuit technology will require that these di
168 cal SiO2/Si interface, which is the basis of integrated circuit technology, is prepared by thermal ox
169       Despite much progress in semiconductor integrated circuit technology, the extreme complexity of
170 t of goals established for advancing silicon integrated circuit technology-have challenged the comput
171 nce characteristics that exceed conventional integrated circuit technology.
172 semiconductor (CMOS) analog very-large-scale-integrated circuit technology.
173                        Here, we report on an integrated circuit that combines the capture of CTCs wit
174 in mechanics and materials provide routes to integrated circuits that can offer the electrical proper
175 racteristic is a hallmark of applications of integrated circuits that exist today, there might be opp
176 iversity of neuronal cell types and complex, integrated circuits that permit the ENS to autonomously
177             We constructed three genomically integrated circuits that use bistable autoregulatory tra
178 most widely used technology for constructing integrated circuits, the complementary metal-oxide semic
179 circuit performance allow us to use graphene integrated circuit to perform practical wireless communi
180 mplementary metal-oxide-semiconductor (CMOS) integrated circuits to realize a high-fidelity all-elect
181                    Because a superconducting integrated circuit uses a multilayer of superconducting,
182 a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic cryst
183                                Monolithic 3D integrated circuits using transition metal dichalcogenid
184 lustrate the complete integration of silicon integrated circuits via pick and place or using organic
185 e-based detection methods with an underlying integrated circuit, we are now poised to create a truly
186                Application-specific photonic integrated circuits, where particular circuits/chips are
187                  Our results define a single integrated circuit whose components and connectivity can
188   The introduction of molecular devices into integrated circuits will probably depend on the formatio
189  a conventional diffraction-limited photonic integrated circuit, will require the use of waveguides w
190 s provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemi
191                           Combining photonic integrated circuits with a biologically based sensing ap
192 materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes.
193 ble route toward the realization of photonic integrated circuits with ultra-high packing densities.
194 otubes are attractive materials for flexible integrated circuits, with many potential areas of applic
195                    Fabrication of a graphene integrated circuit without significantly degrading trans

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