1 ineering critical current density beyond 2.0 kA/mm(2) at 4.2 K and 16 T, by growing thick REBa2Cu3Ox

2 temperature with high current densities (>10 kA cm(-2)) and tunability in the near-infrared (1,060 nm

3 t amplitudes of 1,410 (113 kA/m), 1,300 (104 kA/m), and 700 (56 kA/m) oersteds (Oe) at 30%, 60%, and

4 pectively, for x = 0, to 552 kA/m and 7.11 kA/m respectively for x = 0.2.

5 oprobe injection at amplitudes of 1,410 (113 kA/m), 1,300 (104 kA/m), and 700 (56 kA/m) oersteds (Oe)

6 eading to a 14% increase in coercivity (1438 kA m(-1)) and matched remanence (1.16 T) giving a BHmax

7 mately 1500 cm(-1) at a current density of 2 kA cm(-2).

8 urrent in the plasma undulator can reach 0.3 kA level, making such an undulator a potential candidate

9 end attached to the ground and produced a 36-kA return stroke.

10 vity (H C ) increase from 426 kA/m and 4.4 kA/m respectively, for x = 0, to 552 kA/m and 7.11 kA/

11 erties are: intrinsic coercivity Hci = 688.4 kA/m, remanence Br = 0.51 T, and energy product (BH)max

12 s needed at the typical current density of 4 kA m(-2) , leading to a low energy consumption of 483 kW

13 S ) and coercivity (H C ) increase from 426 kA/m and 4.4 kA/m respectively, for x = 0, to 552 kA/m

14 cies (150-375 kHz) and magnetic fields (4-44 kA/m).

15 e and infrared ranges (5 to 25 and 1.5 to 5% kA(-1)), and the broad absorption feature in the 2.9-to-

16 d 4.4 kA/m respectively, for x = 0, to 552 kA/m and 7.11 kA/m respectively for x = 0.2.

17 10 (113 kA/m), 1,300 (104 kA/m), and 700 (56 kA/m) oersteds (Oe) at 30%, 60%, and 90% "on" time (duty

18 me (duty), respectively, and at 1,050 Oe (84 kA/m) at 50% and 70% duty over the 20-min treatment.

19     An electron coupling matrix element of H(kA) = (4.7 +/- 1.1) x 10(-4) eV ( approximately 46 J/mol

20 vingly depressed selectivity (1 < kappaobs &lt; kA/kB), caused by inefficient microscopic mixing of a re