ライフサイエンスコーパス: lithography

1 for positive structures (templates for soft lithography).

2 orming a critical process in single-digit-nm lithography.

3 anowire devices were fabricated using e-beam lithography.

4 local probe method enabled by selected-area lithography.

5 lasers fabricated by a single-mask standard lithography.

6 Pd/Ti contacts had been patterned via e-beam lithography.

7 ecording, near-field thermophotovoltaics and lithography.

8 esolution optical testing and sub-wavelength lithography.

9 unprecedented patterning performance in EUV lithography.

10 om PDMS on machined molds and do not require lithography.

11 l and biofunctional resist for electron-beam lithography.

12 guish particles synthesized by means of flow lithography.

13 achievable using conventional electron-beam lithography.

14 d channels formed by backside diffused light lithography.

15 rger than the smallest features patterned by lithography.

16 ctrodes on elastomers made by grain boundary lithography.

17 er of cylindrical solid grains built by soft lithography.

18 of the sacrificial structures for nanoscale lithography.

19 sorting, on-chip passivation, and nanoscale lithography.

20 pid prototyping method based on liquid-phase lithography.

21 ursors, which are fabricated by conventional lithography.

22 which are then polymerized using two-photon lithography.

23 rich micropatterned films created by imprint lithography.

24 nctions produced by using low-cost colloidal lithography.

25 secure quantum communication, computing and lithography.

26 ofabricated in Si by bulk micromachining and lithography.

27 sses, as required for linear block copolymer lithography.

28 ction of this biomimetic topography via soft lithography.

29 annot be easily integrated with conventional lithography.

30 rsor materials that can be processed in flow lithography.

31 fect in Al loops prepared by advanced e-beam lithography.

32 ized to create master stamps for nanoimprint lithography.

33 p" growth techniques or by "top-down" e-beam lithography.

34 ayers through masks defined by electron-beam lithography.

35 Bosch-etched silicon master pattern by soft lithography.

36 ine platinum and palladium using multiphoton lithography.

37 bstrate features prepared using conventional lithography.

38 ntaining composite fabrication by two-photon lithography.

39 widely used in communication, metrology and lithography.

40 tter design algorithms and industry-standard lithography.

41 izable micro-wavy pattern using direct image lithography.

42 interacting building blocks by means of nano-lithography.

43 e sizes below the resolution of conventional lithography.

44 hy, colloidal lithography, Langmuir-Blodgett lithography) (116 references).

45 ing template stripping with focused ion beam lithography, a variety of aperture-based near-field prob

46 tion methods typically involve electron-beam lithography--a technique that enables high fidelity patt

47 The advent of soft lithography allowed for an unprecedented expansion in th

48 ed on a substrate can be patterned by e-beam lithography, altering the structure of their capping lig

49 Nanosphere lithography, an inexpensive and high throughput techniqu

50 own patterning methods such as electron-beam lithography, an initial nanometer-scale layer of a secon

51 patible precursor solution using multiphoton lithography, an intrinsically 3D laser direct write micr

52 ironments created by a combination of e-beam lithography and "click" chemistry techniques.

53 electron microscopy, parallel beam electron lithography and advanced Xray sources.

54 directed assembly, a combination of top-down lithography and bottom-up assembly, and by the sequentia

55 n architectures, thereby converging top-down lithography and bottom-up on-surface chemistry into tech

56 asy to fabricate using single-step grayscale lithography and can be inexpensively replicated.

57 ized by using scanning probe block copolymer lithography and characterized using correlated electron

58 A combined nanoimprinting lithography and chemical surface treatment approach was

59 icrofluidic device was fabricated using soft lithography and contact printing of a conductive polymer

60 tical applications including truly nanoscale lithography and deep sub-wavelength scale confinement.

61 ficantly impact applications in neutral atom lithography and diagnostics.

62 It required only lithography and dry etching for the pore definition and

63 combination of sequential laser interference lithography and electrochemical deposition methods.

64 By using standard lithography and inductively coupled plasma etching, the

65 Our device does not require high-resolution lithography and is tolerant to fabrication variations an

66 we review the fundamentals of scanning probe lithography and its use in materials science and nanotec

67 s over silicon using a combination of e-beam lithography and lift-off.

68 embrane hard masks, patterned using standard lithography and mature silicon processing technology.

69 ) random laser devices were fabricated using lithography and metallization processes.

70 nanostructures based on combination of soft lithography and nanosphere lithography, and perform a co

71 design flexibility enabled by 3D holographic lithography and provides guidance for optimization for a

72 aveguide fabricated via conventional optical lithography and reactive ion etching (RIE).

73 a nanomesh by the combination of nanosphere lithography and reactive ion etching and evaluated as a

74 (SOI) substrate using electron-beam (e-beam) lithography and reactive-ion-etching, the PhC sensing pl

75 specific systems, and rely on sophisticated lithography and seeding techniques, making large area or

76 ature hard-mask process based on traditional lithography and selective wet-etching of MgO.

77 n, monolayers are often patterned using soft lithography and selectively decorated with molecules.

78 The presented FR isolators are made via lithography and sputter deposition, which allows facile

79 ndard mum-level photolithography/holographic lithography and the reconstruction-equivalent-chirp (REC

80 ectively nanoscale-doped channels using nano-lithography and thermal-diffusion doping processes.

81 We use electron beam lithography and wafer scale processes to create silicon

82 fabricated on a polyimide substrate using UV lithography and wet etching to produce flexible transpar

83 nowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmis

84 ithography, soft lithography, nanoimprinting lithography) and on surface forces (capillary force lith

85 sMA brushes were obtained using interference lithography, and confocal microscopy again confirmed the

86 ricated by multilayer deposition, nanosphere lithography, and multistep reactive ion etching were inc

87 mbination of soft lithography and nanosphere lithography, and perform a comprehensive structural and

88 brication, generally requiring a single-step lithography, and the possibility of vertical integration

89 rboxyl groups were generated using stop-flow lithography, and then in situ coprecipitation was used t

90 nting, roll-to-roll, self-assembly, and soft-lithography are most relevant.

91 c devices fabricated using conventional soft lithography are well suited as prototyping methods.

92 represent a major advance in scanning probe lithography as a tool to generate patterns of tailored n

93 asic skill sets in photolithography and soft lithography, as well as experience with stereotaxic surg

94 ays across 6-inch wafer, using electron beam lithography at 100 kV and polymethyl methacrylate (PMMA)

95 Reaction windows are opened by e-beam lithography at sites of interest on poly(methyl methacry

96 The microcell, fabricated using ultraviolet lithography, at variance with previous versions of elect

97 anolattices were fabricated using two-photon lithography, atomic layer deposition, and oxygen plasma

98 A nanoimprint-lithography-based fabrication method to generate stable

99 ography, nano-imprint lithography or dip pen lithography, basic photolithography is the technique whi

100 h as near-field thermophotovoltaics and nano-lithography because of the expected increases in efficie

101 copolymers is an emergent technique for nano-lithography, but is limited in the range of structures p

102 We exploited the phenomena for 3D mesoscale lithography, by showing one example where iterated depos

103 he ITO line pattern and secondary sputtering lithography can change the shape of the ITO line pattern

104 irect-write techniques such as electron-beam lithography can create complex nanostructures with impre

105 bly paradigm, scanning probe block copolymer lithography can pattern precursor materials embedded in

106 As top-down structuring methods such as lithography cannot be applied to van der Waals bound mat

107 nanoscale patterning methods, such as e-beam lithography, cannot be easily applied to such applicatio

108 d by using a method based on capillary force lithography (CFL).

109 The method, termed coaxial lithography (COAL), relies on templated electrochemical

110 aphy) and on surface forces (capillary force lithography, colloidal lithography, Langmuir-Blodgett li

111 Scalable approaches including soft lithography, colloidal self-assembly, and interference h

112 uding energy conversion, thermal management, lithography, data storage and thermal microscopy.

113 confined three-dimensional chambers that are lithography-defined, lipid-bilayer coated and isolated t

114 Microfluidics-based soft-lithography devices have recently been used to automate

115 strategy of DNA-origami-based nanoimprinting lithography (DONIL) demonstrates high precision in contr

116 al nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene

117 pplications require the use of electron-beam lithography (EBL) to generate such nanostructures.

118 achieved by combination of the electron-beam lithography (EBL), plasma dry etching and size reduction

119 bility of all-water-based silk electron-beam lithography (EBL), we fabricate nanoscale photonic latti

120 ased on irradiation (photo- and interference lithography, electron-beam lithography), mechanical cont

121 y expands the synthesis capabilities of flow lithography, enabling particle synthesis, using water-in

122 semiconductor processing technology, such as lithography, etch and deposition techniques.

123 Extreme ultraviolet lithography (EUVL) is the leading technology for enablin

124 er large areas using extreme-UV interference lithography exhibited sharp and tunable plasmon resonanc

125 pen array in the context of a scanning probe lithography experiment to rapidly prepare libraries havi

126 abrication constraints-with unique grayscale-lithography fabrication of an exemplary device: a low-cr

127 dicate that the combination of PS nanosphere lithography, followed by the spin-coating of AuNPs, lead

128 we report the utility of scanning helium ion lithography for fabricating functional graphene nanocond

129 Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and d

130 sed analytical device (muPAD) is made with a lithography-free process by a simple cut and drop method

131 ion of Au nanostructures, by using a simple, lithography-free, and single-step process.

132 Here, we demonstrate lithography-free, broadband, polarization-independent op

133 A lithography-free, low-cost, free-surface millifluidic de

134 nction of endothelial leader cells by plasma lithography geometric confinement generated.

135 Flow lithography has become a powerful particle synthesis tec

136 A new resist material for electron beam lithography has been created that is based on a supramol

137 er, the limited throughput of scanning probe lithography has prevented its exploitation in technologi

138 fabrication techniques such as electron-beam lithography have a resolution of a few nm at best.

139 films, (ii) bottlebrushes for photonics and lithography, (iii) bottlebrushes for small molecule enca

140 valve cellular array is fabricated with soft lithography in a format that enables facile integration

141 and a pneumatic layer are fabricated by soft-lithography in PDMS and bonded permanently with an oxyge

142 components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary

143 nd our current processing technology such as lithography in terms of mass-productivity and structural

144 MnxGe1-x nanomeshes fabricated by nanosphere lithography, in which a Tc above 400 K is demonstrated a

145 Here, we report wrinkle lithography integrated with concurrent design to produce

146 Solution-exchange lithography is a new modular approach to engineer surfac

147 volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law.

148 r continuous, scalable, and geometry-tunable lithography is developed, named photo-roll lithography (

149 A versatile two-photon laser lithography is employed for LC cell scaffolding to accur

150 Dynamic electrostatic lithography is invented to dynamically generate various

151 -sized polystyrene particles via nanoimprint lithography is reported.

152 Electron beam lithography is used to pattern MoSe2 monolayer crystals

153 Thermal scanning lithography is used to pattern semiconducting nanoribbon

154 g process that is a unique off-shoot of soft lithography known as particle replication in nonwetting

155 rces (capillary force lithography, colloidal lithography, Langmuir-Blodgett lithography) (116 referen

156 ed catalysts were created using a nanosphere lithography lift-off process and an applied-bias photon-

157 In this work, we use laser interference lithography (LIL) to fabricate gratings possessing multi

158 Combining this technique with lithography, local conversion could be realized at the n

159 es, metamaterials realized with conventional lithography may effectively operate as three-dimensional

160 and interference lithography, electron-beam lithography), mechanical contact (scanning probe lithogr

161 To this end, we developed a soft-lithography method of growing the archaeal cells to enab

162 This novel lithography method provides a reliable means for studyin

163 s report, we develop a versatile multiphoton lithography method that enables rapid fabrication of thr

164 ted from PVP and methacrylic acid, using the lithography method.

165 tion using microslits fabricated by standard lithography method.

166 hnique instead of an expensive electron beam lithography method.

167 mportance of the third dimension5,6, current lithography methods do not allow fabrication of photonic

168 Conventional soft-lithography methods involving the transfer of molecular

169 lied approaches such as 2D conventional soft lithography methods that have rectangular channel cross-

170 Exploiting multiphoton lithography, microchannel networks spanning nearly all s

171 ination of computational modeling and plasma lithography micropatterning, we investigate the roles of

172 microfluidic devices made by multilayer soft lithography (MSL).

173 ng integrated valves made by multilayer soft lithography (MSL).

174 were discovered, including three-dimentional lithography, multiphoton chirality transfer, polarizatio

175 Besides electron beam lithography, stencil lithography, nano-imprint lithography or dip pen lithogr

176 tive approach, however, does not require any lithography, nano-mixture deposition, pre- and post-trea

177 al contact (scanning probe lithography, soft lithography, nanoimprinting lithography) and on surface

178 ther hand, recent advances in nanoimprinting lithography (NIL) may enable the fabrication of large-ar

179 ode array (MEA) using a modified nanoimprint lithography (NIL) technique.

180 onic devices was developed using nanoimprint lithography (NIL), combining a printable high-refractive

181 This process used nanosphere lithography (NSL) encompassing the deposition of monolay

182 he SiO2 NPA was fabricated by the nanosphere lithography (NSL) techniques.

183 Herein, nanosphere lithography (NSL) was used to fabricate uniform arrays o

184 f immobilized AgNPs fabricated by nanosphere lithography (NSL) were used to study AgNP sulfidation in

185 pproach for photoresist-free, direct optical lithography of functional inorganic nanomaterials.

186 DBTs enabled high-sensitivity electron-beam lithography of patterns with widths of only a few DBTs (

187 bined with nanometre-precision electron-beam lithography offers us the capability to finely control t

188 tructures is achieved using integrative soft-lithography on a backing splayed liquid-crystal elastome

189 SU8 and Ormocomp((R))) were defined through lithography on glass substrates followed by short SF(6)

190 the findings of the past 20 years on direct lithography on NC films with a focus on the latest devel

191 For the past 2-3 years, direct lithography on NC films with e-beams and X-rays has gone

192 d W-HfB(2) tips able to perform atomic-scale lithography on Si.

193 mpatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps.

194 vantage over more complex approaches such as lithography or colloidal assembly.

195 ures produced by techniques (high resolution lithography or colloidal synthesis) that are complex and

196 thography, stencil lithography, nano-imprint lithography or dip pen lithography, basic photolithograp

197 Previous routes use electron-beam lithography or direct laser writing but widespread appli

198 at does not require high-resolution advanced lithography or well-controlled wafer bonding techniques

199 coating, electron beam lithography, optical lithography, or wet chemical steps.

200 te, fabricated by using low-cost nanoimprint lithography over a large area, lead to a sharp peak in a

201 s method-which we term hard-tip, soft-spring lithography-overcomes the throughput problems of cantile

202 ave shown significant improvement over other lithography patterned CVD graphene micro ribbons.

203 Here, we demonstrate plasma lithography patterning on elastomeric substrates for elu

204 ransfer and heat dissipation, anticorrosion, lithography, photochromism, solar chemicals production a

205 forming molecular printing using polymer pen lithography (PPL), a cantilever-free scanning probe-base

206 e lithography is developed, named photo-roll lithography (PRL), by integrating photolithography with

207 anodot arrays are fabricated using a thermal lithography process and are functionalized with IFN-gamm

208 ed polymer lasers fabricated with a standard lithography process on a chip.

209 combination with a single, traditional soft lithography process, it is possible to generate hierarch

210 s methodology can be described as a "direct" lithography process, since the exposure is performed dir

211 Ag-assisted wet chemical etching and a photo-lithography process.

212 ip in poly(dimethyl siloxane) (PDMS) by soft lithography process.

213 and optimize the full parameter space of the lithography process.

214 The roll-to-roll ultraviolet nanoimprint lithography (R2R UV-NIL) technique provides a solution f

215 As top-down lithography reaches the length scale of a single macromo

216 Currently, flow lithography relies on the use of polydimethylsiloxane mi

217 robot are fabricated using moulding and soft lithography, respectively, and the pneumatic actuator ne

218 based PC structure fabricated by nanoimprint lithography, selected for its low autofluorescence, supp

219 gel microparticles synthesized via stop flow lithography (SFL).

220 ive arrays of stable 2D nanochannels without lithography should prove useful to the study of confined

221 he well-defined regular VACNF NEAs by e-beam lithography show a much faster kinetics for cathepsin B

222 ography), mechanical contact (scanning probe lithography, soft lithography, nanoimprinting lithograph

223 velopments in scanning probe block copolymer lithography (SPBCL) enable the confinement of multiple m

224 Here, we use scanning probe block copolymer lithography (SPBCL) to create "nanoreactors" having atto

225 n particular, scanning probe block copolymer lithography (SPBCL), which combines elements of block co

226 Scanning probe lithography (SPL) is a promising candidate approach for

227 Besides electron beam lithography, stencil lithography, nano-imprint lithograp

228 ) and thereby, can be fabricated in a single lithography step over relatively large areas (>30 mm x30

229 ngths are simultaneously defined in a single lithography step using a single material (silicon).

230 f 200 nm and can be fabricated with a single lithography step.

231 cision alignment capability of electron-beam lithography, surfaces with complex patterns of multiple

232 Nanoscribe Photonic Professional GT 3D laser lithography system, a two-photon polymerization (2PP) 3D

233 combination of a cost-effective microsphere lithography technique and subsequent dry/wet etching pro

234 A stencil lithography technique has been developed to fabricate or

235 A new lithography technique is presented that exploits the int

236 writing techniques, so for a scanning probe lithography technique to become widely applied, there ne

237 his report we used an electron-beam (e-beam) lithography technique to fabricate patterns of a cell ad

238 nsors, we also introduce a deep ultra-violet lithography technique to simultaneously pattern thousand

239 iloxane (PDMS) microchannel through the soft lithography technique.

240 was synthesized via facile microemulsion UV lithography technique.

241 ost using standard microfabrication and soft lithography techniques (2-3 d), and they can be operated

242 e hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of

243 iting." Although a variety of scanning probe lithography techniques are available, each one imposes d

244 luidic devices typically relies on expensive lithography techniques or the use of sacrificial templat

245 These percolation lithography techniques produced permanent photonic struc

246 diffraction grating sensor by using imprint-lithography techniques to give a "Molecularly Imprinted

247 Here, we used soft lithography techniques to produce 3 dimensional (3-D) ce

248 By employing the sputtering and e-beam lithography techniques, platinum nanoparticles (Pt NPs)

249 that are inaccessible using traditional soft lithography techniques.

250 er currently available nonplanar nanoimprint lithography techniques.

251 ures is extremely complicated using standard lithography techniques.

252 cated using conventional sputtering and soft-lithography techniques.

253 rode array (MEA) chip fabricated by standard lithography technology for in vivo test.

254 Currently, lithography technology for the sub-7 nm node and beyond

255 By employing direct printing but not lithography technology to aim low cost and disposable ap

256 c device is fabricated using multilayer soft lithography technology, and consists of a control layer

257 ) were fabricated by specialized nano-sphere lithography technology.

258 - 7 mum for positive structures such as soft lithography templates, with a roughness of 0.35 mum.

259 rication method utilizing incline and rotate lithography that achieves sloped-wall microapertures in

260 thographic approaches (such as electron-beam lithography) that are otherwise required to manipulate m

261 Using electron beam lithography the targeted structure has been accurately f

262 By means of nanosphere lithography, the SERS substrate was prepared via the ini

263 om SOI material using high-resolution e-beam lithography, thin film vacuum deposition and reactive-io

264 ed with high-throughput photo or nanoimprint lithography, thus enabling widespread adoption.

265 substrates using tip induced crystallization lithography (TICL).

266 ings are fabricated using laser interference lithography to achieve precise surface periodicities, wh

267 apid prototyping capabilities of multiphoton lithography to create and characterize a cell-capture de

268 otential applications ranging from nanoscale lithography to energy storage.

269 lified resist materials developed for 193 nm lithography to EUV wavelengths.

270 late 1990s and early 2000s used such direct lithography to fabricate electrical wires from metallic

271 a stiff (1.77 MPa) environment, we use soft lithography to fabricate polydimethylsiloxane (PDMS) dev

272 We report on using interferometric lithography to fabricate uniform, chip-scale, semiconduc

273 Here, by using multiphoton ablation lithography to pattern surfaces with nanoscale craters o

274 ed photolithography with Hole Mask Colloidal lithography to pattern uniform nanoparticle arrays for b

275 cale spot of a THz beam, we use atomic layer lithography to pattern vertical nanogaps in a metal film

276 talysis was combined with immersion particle lithography to prepare polynitrophenylene organic films

277 microstructures can be achieved by grayscale lithography to produce a curved photoresist (PR) templat

278 on approaches, which depend on electron beam lithography to sequentially fabricate each nanopillar, t

279 ombines the features of nanoimprint and soft lithography to topographically construct metal thin film

280 rried out on surfaces must be increased, (2) lithography tools are needed that are capable of positio

281 We describe a simple method of halftone gel lithography using only two photomasks, wherein highly cr

282 the state-of-the-art ultraviolet nanoimprint lithography (UV-NIL) to fabricate functional optical tra

283 r laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN

284 Here we present oxygen-free flow lithography via inert fluid-lubrication layers for the s

285 rication of these devices by multilayer soft lithography was easy and reliable hence contributed to t

286 Soft lithography was used to fabricate a pneumatically actuat

287 Electron-beam lithography was used to fabricate micrometer- and nanome

288 Scanning probe block copolymer lithography was used to synthesize individual sub-10-nm

289 Applying 3D laser lithography, we produced and characterized micro-truss a

290 Our system is inspired by maskless lithography, where a digital micromirror device (DMD) is

291 sts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in th

292 l of interest, in contrast with conventional lithography which uses a polymeric resist as a mask for

293 w nano-patterning approach, named 'nanomotor lithography', which translates the autonomous movement t

294 ute for carrier-injected laser machining and lithography, which may reach nanometre or even angstrom

295 vities has typically relied on electron-beam lithography, which precludes integration with large-scal

296 s are fabricated by combining 3D holographic lithography with conventional photolithography, enabling

297 ies for new fabrication methods that combine lithography with principles of self-assembly are identif

298 , which combines elements of block copolymer lithography with scanning probe techniques, allows one t

299 that combines scanning probe block copolymer lithography with site-selective immobilization strategie

300 based on the hyperlens, unlike conventional lithography, works under ordinary light source without c