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1 de AFM combined with selective modulation of magnetic domains.
2 face but also lay the groundwork for imaging magnetic domains and domain boundaries at the magnetic T
4 magnetoplasmon at the interface of opposite magnetic domains, and demonstrate the existence of zero-
9 periments thus indicate that the presence of magnetic domains at the transition starkly increases dis
10 ission microscopy technique, we imaged small magnetic domains at very low fields in these multilayers
13 that, apart from trivial 180(o) commensurate magnetic domains, can be described by ferromagnetic and
14 ge region has a significant influence on the magnetic domain configuration due to an induced magnetic
17 netotactic bacterium that synthesises single-magnetic domain crystals which are incorporated into mag
21 across antiphase boundaries support multiple magnetic domains even in particles as small as 12-14 nm.
23 cur within the finite-size regime, where the magnetic domain growth is limited due to physical defect
27 c boundary, or domain wall, between opposing magnetic domains in the magnetization reversal process.
28 n permeability are observed by switching the magnetic domains in the wire and measuring the modificat
31 x (x = 0, 1, 2, 3) microwires, including the magnetic domain period (d) and surface roughness (Rq) as
33 ay microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier
38 s in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic laye
39 rate the visualization and reconstruction of magnetic domain structures in a 3D curved magnetic thin
41 it torque gives rise to instabilities of the magnetic domain structures that are reminiscent of Rayle
43 idges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic
44 main memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field
47 eport observations of the motion of a single magnetic domain wall at the scale of the individual peak
49 surfactant films, and of metal surfaces, and magnetic domain wall fluctuations in antiferromagnets.
52 on behaviours microscopically originate from magnetic domain wall motion, which can be precisely depi
53 y effect has considered ideal junctions with magnetic domain walls (DW) at the interfaces, in practic
60 gnet-superconductor (F/S) hybrid structures, magnetic domain walls can be used to spatially confine t
62 y of left- and right-handed spin textures in magnetic domain walls enables fast current-driven domain
63 pating spin polarized currents to manipulate magnetic domain walls has limited the development of suc
64 tion storage and logical processing based on magnetic domain walls have great potential for implement
65 we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7,
66 step towards the practical implementation of magnetic domain walls in energy efficient computing.
70 and and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulato
71 esult from large fringing fields surrounding magnetic domain walls in the magnetically soft layer.
72 The microscopic magnetization variation in magnetic domain walls in thin films is a crucial propert
77 isorder such as vortices in superconductors, magnetic domain walls, and charge density wave materials
83 f the magnetic anisotropy and propagation of magnetic domains with low applied electric fields under
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