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1 de AFM combined with selective modulation of magnetic domains.
2 face but also lay the groundwork for imaging magnetic domains and domain boundaries at the magnetic T
3                                  The role of magnetic domains (and the walls between domains) in dete
4  magnetoplasmon at the interface of opposite magnetic domains, and demonstrate the existence of zero-
5                                              Magnetic domains, and the boundaries that separate them
6              The garnet film had maze-shaped magnetic domains, and the domain walls disappeared when
7       The magnetite crystals were all single magnetic domains, and the magnetization directions of sm
8 microscopy (AFM) is demonstrated for mapping magnetic domains at size regimes below 100 nm.
9 periments thus indicate that the presence of magnetic domains at the transition starkly increases dis
10 ission microscopy technique, we imaged small magnetic domains at very low fields in these multilayers
11                                            A magnetic domain boundary on the surface of a three-dimen
12 re and detected a chiral edge current at the magnetic domain boundary.
13 that, apart from trivial 180(o) commensurate magnetic domains, can be described by ferromagnetic and
14 ge region has a significant influence on the magnetic domain configuration due to an induced magnetic
15 recorded and numerically inverted to map its magnetic domain configuration.
16 at serves as a 'fingerprint' of a particular magnetic domain configuration.
17 netotactic bacterium that synthesises single-magnetic domain crystals which are incorporated into mag
18 imensional ferromagnetism with a complicated magnetic domain dynamic.
19 -probe-type experiments can even investigate magnetic domain dynamics.
20 tting the magnetization vector of individual magnetic domains either 'up' or 'down'.
21 across antiphase boundaries support multiple magnetic domains even in particles as small as 12-14 nm.
22                                              Magnetic domain formation is observed through both in si
23 cur within the finite-size regime, where the magnetic domain growth is limited due to physical defect
24                      Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a
25                                              Magnetic domains in adjacent cobalt layers can be manipu
26          Recent observations of switching of magnetic domains in ferromagnetic metals by circularly p
27 c boundary, or domain wall, between opposing magnetic domains in the magnetization reversal process.
28 n permeability are observed by switching the magnetic domains in the wire and measuring the modificat
29                                              Magnetic domain memory (MDM), that is, the tendency for
30 ical lattice, and with a correlation length (magnetic domain) of 6.7(4) A.
31 x (x = 0, 1, 2, 3) microwires, including the magnetic domain period (d) and surface roughness (Rq) as
32                         Vectorial imaging of magnetic domains reveals an unusually gradual thickness-
33 ay microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier
34 devices, compounds that allow a tailoring of magnetic domain shapes and sizes are essential.
35                                  The surface magnetic domain structure (SMDS) parameters of 45 mum d
36                                              Magnetic domain structure and spin-dependent reflectivit
37  of finite size and strain relaxation on the magnetic domain structure is also discussed.
38 s in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic laye
39 rate the visualization and reconstruction of magnetic domain structures in a 3D curved magnetic thin
40 red, in addition to the observation of clear magnetic domain structures in these films.
41 it torque gives rise to instabilities of the magnetic domain structures that are reminiscent of Rayle
42 ens the door to future applications based on magnetic domain tailoring.
43 idges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic
44 main memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field
45  nucleated vortex states into larger complex magnetic domains, until it is in a fully-FM state.
46                    The interaction between a magnetic domain wall and a pinning site is explored in a
47 eport observations of the motion of a single magnetic domain wall at the scale of the individual peak
48  functionalities in chip-based devices using magnetic domain wall conduits.
49 surfactant films, and of metal surfaces, and magnetic domain wall fluctuations in antiferromagnets.
50 that encode information in the position of a magnetic domain wall in a ferromagnetic wire.
51      This prototype demonstration shows that magnetic domain wall logic devices have the necessary ch
52 on behaviours microscopically originate from magnetic domain wall motion, which can be precisely depi
53 y effect has considered ideal junctions with magnetic domain walls (DW) at the interfaces, in practic
54                The current-induced motion of magnetic domain walls (DWs) confined to nanostructures i
55 rise to spin transfer torques that can drive magnetic domain walls along nanowires.
56                                              Magnetic domain walls are boundaries between regions wit
57                        Although two types of magnetic domain walls are known to exist in magnetic thi
58                                       Chiral magnetic domain walls are of great interest because lift
59 used to tailor the texture and handedness of magnetic domain walls by interface engineering.
60 gnet-superconductor (F/S) hybrid structures, magnetic domain walls can be used to spatially confine t
61                The current-induced motion of magnetic domain walls confined to nanostructures is of i
62 y of left- and right-handed spin textures in magnetic domain walls enables fast current-driven domain
63 pating spin polarized currents to manipulate magnetic domain walls has limited the development of suc
64 tion storage and logical processing based on magnetic domain walls have great potential for implement
65 we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7,
66 step towards the practical implementation of magnetic domain walls in energy efficient computing.
67 y of which rely on efficient manipulation of magnetic domain walls in ferromagnetic nanowires.
68                                              Magnetic domain walls in magnetic tracks produce strong
69                Head-to-head and tail-to-tail magnetic domain walls in nanowires behave as free magnet
70 and and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulato
71 esult from large fringing fields surrounding magnetic domain walls in the magnetically soft layer.
72   The microscopic magnetization variation in magnetic domain walls in thin films is a crucial propert
73                                The motion of magnetic domain walls induced by spin-polarized current
74      The rich internal degrees of freedom of magnetic domain walls make them an attractive complement
75        But the roughness and mobility of the magnetic domain walls prevents closer packing of the mag
76               The possibility of controlling magnetic domain walls using voltages offers an energy ef
77 isorder such as vortices in superconductors, magnetic domain walls, and charge density wave materials
78                                              Magnetic domain walls, in which the magnetization direct
79                                              Magnetic domain walls, which separate regions of opposin
80 s (less than 0.01%) can be used to propagate magnetic domain walls.
81 , which are locked to both ferroelectric and magnetic domain walls.
82        EPR measurements show the presence of magnetic domains well above Tc , as expected for a ferro
83 f the magnetic anisotropy and propagation of magnetic domains with low applied electric fields under
84                                  Non-uniform magnetic domains with non-trivial topology, such as vort
85                         We are able to image magnetic domains with widths of 25 nm, and demonstrate a

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