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1 re iridate Ho2Ir2O7, leading to a fragmented magnetization.
2  modify the sense of rotation of the average magnetization.
3  is observed which is antiparallel to the Fe magnetization.
4 ers have been used to efficiently manipulate magnetization.
5  needed to capture the extent of the induced magnetization.
6 y a detailed analysis of the field-dependent magnetization.
7  individual atoms and the resulting zero net magnetization.
8 estration that results in increased cellular magnetization.
9 irect measurements of the synthetic hemozoin magnetization.
10 ficant impact on the improvement of remanent magnetization.
11 aviours and a semi-reversible control of the magnetization.
12  allow electrical switching of perpendicular magnetization.
13 rp onset and the thickness dependence of the magnetization.
14 ficients and a large electric-field-reversed magnetization.
15  the spin polarization is rotating about the magnetization.
16  > 1.0 x 10(7) erg/cc), and large saturation magnetization (4piMs > 2.4 T).
17 nanostructures with high TC (700 K) and high magnetization (5.9 emu/g).
18  the process of selectively manipulating the magnetization alignment in magnetic layers in the Fe/GaA
19                     By spin-locking the (1)H magnetization along the magic angle, the (1)H spin diffu
20            Dynamic optical control over both magnetization and chemical potential of a TI may be usef
21 sult in approximately 100% modulation of the magnetization and drives domain wall motion over approxi
22 en ferroelectrics featuring both spontaneous magnetization and electric polarization are still rare.
23 iral magnets with a simultaneous reversal of magnetization and electric polarization that is still li
24 pirals leads to the simultaneous reversal of magnetization and electric polarization.
25                                       Direct magnetization and electrical resistivity measurements de
26  excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave si
27 itation of auto-oscillations of the Y3Fe5O12 magnetization and generation of coherent microwave radia
28 tandard MagLev (i.e., where the direction of magnetization and gravitational force are parallel) cann
29  rotated state (i.e., where the direction of magnetization and gravitational force are perpendicular)
30 r, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored
31    We show, through a combination of angular magnetization and magneto-optical domain imaging measure
32 i multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directl
33                       Meanwhile the remanent magnetization and polarization show opposite variation t
34            The detection in this instance of magnetization and scattering that are both local to the
35 nsformation temperatures, strain, saturation magnetization and strength) determine their prospects fo
36  a powerful way to build correlation between magnetization and T2 relaxivity of MNPs, especially magn
37 sample with x = 0.3 has the largest remanent magnetization and the smallest polarization.
38 gnetic structures, with arbitrarily oriented magnetization and tunable unidirectional anisotropy, are
39 smitted light was modified by modulating the magnetization, and a Q-switched pulse output with a puls
40 aterial to bear no crystalline dependence on magnetization, and application of a magnetic field cause
41 eutron diffraction, magnetic susceptibility, magnetization, and electrical resistivity are studied fo
42   Thermal expansion, electrical resistivity, magnetization, and specific heat measurements were perfo
43         We demonstrate that the polarity and magnetization are coupled in this system with a measured
44                   Materials with high volume magnetization are perpetually needed for the generation
45                      Oxygen migration and Co magnetization are quantitatively mapped with polarized n
46 ratio of anhysteretic to isothermal remanent magnetization, are insensitive to changing vegetation.
47                 Voltage-induced switching of magnetization, as opposed to current-driven spin transfe
48                An abrupt increase of surface magnetization at around the same temperature suggests th
49    The MP are registered by their non-linear magnetization at combinatorial frequencies by a portable
50  angle to the director, yielding macroscopic magnetization at no external fields.
51  the Dy(III) complex enables a large remnant magnetization at temperatures up to 3.0 K in the magneti
52                      Results show clear dual magnetization behavior with threefold enhancement betwee
53 ll as linear, isotropic, and hysteresis free magnetization behavior.
54 gnetic anisotropy, spin-orbit-torque-induced magnetization behaviour has attracted attention because
55  are known to play a significant role in the magnetization behaviour of thin-film ferromagnets by thr
56                                  Most of the magnetization behaviours microscopically originate from
57                We show that the switching of magnetization between the easy axes in a GaMnAs film dep
58 tric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vic
59 t and voltage-induced magnetization generate magnetization by applied electric fields, but only in sp
60                          The manipulation of magnetization by spin-current occurs through the spin-tr
61  rate of incoherent quantum tunneling of the magnetization by two orders of magnitude.
62 ards zero in the applied magnetic field, the magnetization can reliably freeze about a higher anisotr
63 articles with a strong temperature-dependent magnetization, can be used to produce temperature-depend
64               Remarkably, giant controllable magnetization changes (measured to be as high has ~25%)
65                                        These magnetization changes are the largest seen to date to be
66 urrent simply by use of a FM/NM bilayer with magnetization collinear to the charge current.
67 ds to torques that can be used to switch the magnetization completely in out-of-plane magnetized ferr
68           It can be generalized to different magnetization configurations and yield multiple spin wav
69 netic simulations, and identify two possible magnetization configurations: a circulating magnetizatio
70                              Remarkably, our magnetization curves reveal a crossover field [Formula:
71 = -1.29 cm(-)(1)) extracted from the reduced magnetization data.
72        The spin Seebeck effect also produces magnetization-dependent transverse electric fields.
73 conversion is shown to be spin-helicity- and magnetization-dependent.
74                         The direction of the magnetization depends on the handedness of the adsorbed
75 and the current direction, regardless of the magnetization direction in the domain wall.
76 inistic switching is highly dependent on the magnetization direction in the domain wall.
77 /Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode.
78 rate that manipulation of the AFM Neel-order magnetization direction via purely E-field means can pav
79 tions can be controlled as a function of the magnetization direction.
80        Two groups of characteristic remanent magnetization directions were defined with nearly antipo
81              The in-situ characterization of magnetization during the Li-ion intercalation/deintercal
82 evel coupled simulation framework, including magnetization dynamics and electron transport model, has
83                                     Low-loss magnetization dynamics and strong magnetoelastic couplin
84 f different coordination environments on the magnetization dynamics and the quantum coherence of two
85 serve as a test bed for studies of nonlinear magnetization dynamics at the nanometer length scale.
86 or could allow efficient manipulation of the magnetization dynamics by an electric field, providing a
87  we analytically and micromagnetically study magnetization dynamics excited in an SHO with oblique ma
88 spin currents can be used to excite coherent magnetization dynamics in magnetic nanostructures.
89                                          The magnetization dynamics in such cases shows preference fo
90                 For this we have studied the magnetization dynamics of a ferromagnetic cobalt/palladi
91      Here we report the investigation of the magnetization dynamics of a vanadyl complex with diethyl
92  use time-resolved-vectorial measurements of magnetization dynamics of thin layers of Fe, Ni and Co d
93              We also determine the regime of magnetization dynamics that leads to the greatest perfor
94 e film plane, and is enabled by manipulating magnetization dynamics with fast, local piezostrains (ri
95 enological parameter that dictates real-time magnetization dynamics.
96 , TB , is 14 K, defined by zero-field-cooled magnetization experiments, and is the largest for any mo
97 3 single crystal in which the induced Dy(3+) magnetization (FDy) has a natural tendency to be antipar
98 udy in the Ba2-x Sr x Mg2Fe12O22 family with magnetization, ferroelectricity and neutron diffraction
99 ency to be antiparallel to Fe(3+) sublattice magnetization (FFe) within a large temperature window.
100 -3D regions with a single orientation of the magnetization field.
101 ormation, and highlighting the importance of magnetization fluctuations on carrier spin dynamics in n
102 dentifying a 25 nm central region of uniform magnetization followed by a larger region characterized
103 0) content from 5.9% to 55.6%, and increases magnetization from 4.7 to 65.5 emu/g.
104 minority electron spins alters the interface magnetization from C-type to A-type AFM state.
105 f sufficient polarization from h-LFO and net magnetization from o-LFO.
106  magneto-electric effect and voltage-induced magnetization generate magnetization by applied electric
107 obable cause for the ferromagnetism and weak magnetization hysteresis in Fe-doped hexagonal ZnO and Z
108 rly to the in-plane projection of the static magnetization; (ii) skyrmions generation by pure spin-cu
109 CrEr6 } analogues display slow relaxation of magnetization in a 3000 Oe static magnetic field.
110 ropagate, but current-induced control of the magnetization in a MI has so far remained elusive.
111 roduces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film
112 ace via surface receptors, followed by their magnetization in any desired direction.
113 s as dominating mechanisms for the large net magnetization in BFO.
114 (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets.
115 ayers provides an opportunity to control the magnetization in one layer (in the presence case in GaMn
116 ontrol the up and down states of the remnant magnetization in the BaFe12O19 film when the film is mag
117 dians per square meter), we infer negligible magnetization in the circum-burst plasma and constrain t
118             We show here that by forcing the magnetization in the ferromagnet to precess at resonance
119 ng to our ability to selectively control the magnetization in the GaMnAs layer, we are able to manipu
120 ence case in GaMnAs) by a current, while the magnetization in the other layer (i.e., Fe) remains fixe
121 ce observed for two opposite currents as the magnetization in the structure switches directions.
122 ted the pure electrical generation of valley magnetization in this material, and its direct imaging b
123 omes entangled with kinetic instabilities as magnetization increases.
124 a function of current direction and detector magnetization indicate that hole spin-momentum locking f
125               All-optical switching (AOS) of magnetization induced by ultrafast laser pulses is funda
126 tly probe both the in-plane and out-of-plane magnetizations induced at the interface between the ferr
127                                It shows that magnetization-induced electromagnetic spin-orbit couplin
128  we observe that vortex clusters appear near magnetization inhomogeneities in the ferromagnet, called
129      We decompose the torques that drive the magnetization into field-like and spin-transfer componen
130 es up to around 200 nanometres, in which the magnetization is accessible with current transmission im
131                    The observed out-of-plane magnetization is independent of in-plane magnetic field,
132 ane (in-plane) MA in the FM (AFM) phase, its magnetization is more rigid to external E-field.
133 etween BiFeO3 antiferromagnetic order and Co magnetization is observed, with 90 degrees in-plane Co
134                                 The observed magnetization is significantly greater than both doped a
135 erromagnetic materials, the smoothly varying magnetization leads to the formation of fundamental patt
136 ential at the junction and allow probing the magnetization locally.
137 te fields, MDM is high throughout the entire magnetization loop.
138                        Temperature-dependent magnetization M measurements reveal a ferromagnetic-like
139                                   Saturation magnetization (M S ) and coercivity (H C ) increase from
140 reover, for the first time, it is shown that magnetization measurements can be used to investigate se
141 omprehensive phase diagram based on detailed magnetization measurements of a high quality single crys
142                     Temperature-dependent DC magnetization measurements of Yb14-xPrxMnSb11 (0.44 </=
143                            Here we report on magnetization measurements on the dimerized quantum magn
144                                     Our bulk magnetization measurements reveal that most densely popu
145 s characterized by Mssbauer spectroscopy and magnetization measurements, showing that SAMNs resulted
146 ar the critical composition through detailed magnetization measurements.
147 s, first-principles calculations, as well as magnetization measurements.
148     These results present a simple low-power magnetization mechanism when operating at ambient condit
149 Ag@PDA nanocomposite shows a high saturation magnetization (Ms) of 48.9 emu/g, which allows it to be
150 u on the surface leads to an increase in the magnetization near the surface.
151                                  An enhanced magnetization of 1.83 +/- 0.16 muB /Fe in BFO layers is
152 of low-dissipation protocols that invert the magnetization of a 2D Ising model and explore how the di
153  we report on the relaxation dynamics of the magnetization of artificial assemblies of mesoscopic spi
154 ibutes the temperature dependence of the net magnetization of BFO to strong orbital hybridization bet
155          Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF.
156 ort properties is further discussed, and the magnetization of five alloys containing three or more el
157 n the barrier, and a large proximity-induced magnetization of GdOx, both the magnitude and the sign o
158 e PMN-PT without a magnetic field, the local magnetization of NiFe can be repetitively reversed throu
159      Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 he
160                                The staggered magnetization of the 5 nm thick CuMnAs layer is rotatabl
161 gnetic states, i.e. skyrmion states with the magnetization of the core pointing down/up and periphery
162 he circum-burst plasma and constrain the net magnetization of the cosmic web along this sightline to
163                                          The magnetization of the device is accompanied with large av
164  treatment, both the coercivity and remanent magnetization of the Dy-Cu press injected magnets increa
165 operty of small magnetic particles where the magnetization of the particle flips randomly in time, du
166  the direction perpendicular to the in-plane magnetization of yttrium iron garnet.
167 ials seem to crucially depend on whether the magnetizations of the R and Fe ions' weak ferromagnetic
168 s coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or mag
169 bulk acoustic waves in ME antennas stimulate magnetization oscillations of the ferromagnetic thin fil
170 ed, and a reversible variation of saturation magnetization over 10% was observed in both these materi
171 oscopic patterns, specified by a sequence of magnetization plateaus.
172 nting up/down, and ferromagnetic states with magnetization pointing up/down, by sequential increase a
173                                              Magnetization prepared rapid acquisition gradient-echo T
174  that the collective rotation of the average magnetization proceeds in a unique sense during thermal
175 ls, which incorporate precessionally limited magnetization processes, are needed to understand domain
176 ross-correlating speckle patterns throughout magnetization processes.
177                               Its zero-field magnetization produces distinctive magnetic self-interac
178 that can automatically generate the required magnetization profile and actuating fields for soft matt
179  human intuition to approximate the required magnetization profile and actuating magnetic fields for
180  provides the details of the composition and magnetization profiles and shows that an accumulation of
181                       The static and dynamic magnetization properties are characterized by a hysteres
182 pproximately 69 K and displayed a saturation magnetization reaching 1.09 emu/g.
183 anoparticles that have significantly reduced magnetization, relative to the bulk.
184                        In contrast, the bulk magnetization remains unchanged.
185 nons, and achieve coherent dynamic states of magnetization reminiscent of the Bose-Einstein condensat
186                                          The magnetization represents the magnetic quantum values of
187             Does the excitation of ultrafast magnetization require direct interaction between the pho
188 tions of proton-coupled redox potentials and magnetizations reveal that the Ni-only system features o
189 d the IDMI from the heavy metal layer on the magnetization reversal and provide a route to controllin
190   Using phase field simulations we interpret magnetization reversal as a synergistic effect of the me
191  across this interface lead to deterministic magnetization reversal at low current densities, paving
192 e state in the film, as well as to lower the magnetization reversal barrier, showing a promising rout
193                                              Magnetization reversal characteristics captured by angul
194 latile modulation of magnetic anisotropy and magnetization reversal characteristics.
195               Voltage controlled 180 degrees magnetization reversal has been achieved in BiFeO3-based
196 reversal showing that the energy barrier for magnetization reversal is drastically lowered.
197 estricted to be two-fold, the one-step sharp magnetization reversal is realized and giant magnetoelec
198 (SMM) behavior, with an effective barrier to magnetization reversal of up to 268 cm(-1).
199        Additionally, we find that unlike the magnetization reversal process for periodic artificial s
200            Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential
201 hat the measurement of magnetic field-driven magnetization reversal, mediated by domain wall (DW) mot
202 nd its consequences on the angular dependent magnetization reversal.
203 electrons per cm(2) are sufficient to induce magnetization reversal.
204 ce plateaus are observed at the locations of magnetization reversals, giving a distinct signature of
205                                      Using a magnetization-sensitive scanning X-ray transmission micr
206 nt a simple analytical model to estimate the magnetization (sigma s) and intrinsic coercivity (H ci)
207 estigate magnetoresistance effects and track magnetization spatial distribution in L-shaped Py nanost
208 rents provide the possibility to control the magnetization state of conducting and insulating magneti
209            These include modifying the local magnetization state via an interfacial Dzyaloshinskii-Mo
210                            By exploiting the magnetization states of nanomagnetic disks as state repr
211 E-SHEATH method, sustaining both singlet and magnetization states, thus offering a path to long-lived
212  magnetization configurations: a circulating magnetization structure and a twisted state that appears
213    In thicker samples, however, in which the magnetization structure varies throughout the thickness
214                                              Magnetization studies revealed nearly ideal paramagnetic
215 und spin state (ST =16) that is confirmed by magnetization studies up to 20 Tesla.
216  excites a non-uniform in time precession of magnetizations sublattices in the AFM, due to the presen
217 rt of a thicker BFO layer has a much smaller magnetization, suggesting it still keeps the small cante
218 er, hystereses are clearly observed when the magnetization switches direction in the GaMnAs layer, bu
219  torque coexist, hence jointly affecting the magnetization switching behavior.
220  new path towards achieving energy-efficient magnetization switching by controlling interlayer coupli
221              Furthermore, we demonstrate the magnetization switching by scanning gate voltage with co
222                              Current induced magnetization switching by spin-orbit torques offers an
223                 Here, we study perpendicular magnetization switching driven by the combination of the
224 the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroe
225  achieve voltage-driven in-plane 180 degrees magnetization switching in a strain-mediated multiferroi
226                The electrical control of the magnetization switching in ferromagnets is highly desire
227 like torques and damping-like torques to the magnetization switching induced by the electrical curren
228                                        Local magnetization switching is achieved by adsorbing a chira
229 nts, thereby offering a promising low energy magnetization switching mechanism.
230                          Here we demonstrate magnetization switching of ferromagnetic thin layers tha
231                   Voltage-driven 180 degrees magnetization switching provides a low-power alternative
232 ge of planar Hall voltage is associated with magnetization switching through 90 degrees in the plane
233 es a low-power alternative to current-driven magnetization switching widely used in spintronic device
234 AFM Fe-terminated phase undergoes an E-field magnetization switching with large VCMA efficiency and a
235 ntronic applications such as current induced magnetization switching without any spin-polarized leads
236 ross the interface, and the mediation of the magnetization switching, with the flow of current throug
237 aller than that dissipated by current-driven magnetization switching.
238 in the spin structure factor and a staggered magnetization that is close to the ground-state value.
239 rect exchange coupling via proximity-induced magnetization through non-magnetic layers is typically i
240 l coupling between electric polarization and magnetization, through the exchange of elastic, electric
241 ounds may exhibit intramolecular spontaneous magnetization, thus offering promising prospects for sto
242  with spatial modulations of the density and magnetization, thus overcoming usual requirement for a s
243  the signal dependence on the applied field, magnetization time, and magnetic core size.
244 cts the pair condensate, we have used torque magnetization to 45 T and thermal conductivity [Formula:
245 ic particles, the current can also cause the magnetization to flip randomly in time, even at low temp
246                                              Magnetization transfer (MT) is a neuroimaging technique
247                 Purpose To determine whether magnetization transfer (MT) magnetic resonance (MR) imag
248                   Here, we used quantitative magnetization transfer (qMT) imaging, an advanced micros
249 proton transfer and semisolid macromolecular magnetization transfer effects, the IDEAL fitting reveal
250 etrics of diffusion tensor imaging (DTI) and magnetization transfer imaging (MTI) can detect diffuse
251 can affect both diffusion tensor imaging and magnetization transfer imaging in a non-specific manner.
252               Purpose To test the utility of magnetization transfer imaging in detecting and monitori
253                                   We applied magnetization transfer imaging to examine the impact of
254                                   Conclusion Magnetization transfer imaging was used successfully to
255 hanges, such as diffusion tensor imaging and magnetization transfer imaging, show some correlation wi
256 etion) decreased diffusivities and increased magnetization transfer in cornea, whereas glyceraldehyde
257 ornea, whereas glyceraldehyde also increased magnetization transfer in sclera.
258 se course) underwent T1- and T2-weighted and magnetization transfer magnetic resonance imaging at bas
259 e forward reaction rate constant using (31)P magnetization transfer magnetic resonance spectroscopy a
260 fusion tensor MRI without apparent change in magnetization transfer MRI, suggestive of straightening
261 es, longer coherence lifetimes, and improved magnetization transfer offset the reduced sample size at
262                                          The magnetization transfer ratio (MTR) at 3.5ppm demonstrate
263 ys after implantation, with the asymmetrical magnetization transfer ratio (MTRasym) calculated from i
264 acromolecular proton fraction outperforms MT magnetization transfer ratio and R1 in detection of MS m
265 ion volume and normal-appearing white matter magnetization transfer ratio for all of the patients com
266                                          The magnetization transfer ratio gradient also correlated wi
267                  An abnormal periventricular magnetization transfer ratio gradient occurs early in mu
268  definite multiple sclerosis within 2 years (magnetization transfer ratio gradient odds ratio 61.708,
269                                          The magnetization transfer ratio gradient over 1-5 mm differ
270  multivariate binary logistic regression the magnetization transfer ratio gradient was independently
271                                          The magnetization transfer ratio gradient was not significan
272       At 5 years, lesional measures overtook magnetization transfer ratio gradients as significant pr
273            In normal-appearing white matter, magnetization transfer ratio gradients were measured 1-5
274  macromolecular proton fraction , R1, and MT magnetization transfer ratio in normal-appearing white m
275                      Compared with controls, magnetization transfer ratio in the normal-appearing whi
276                                   The 6-week magnetization transfer ratio map showed good correlation
277   Results In the stenotic kidney, the median magnetization transfer ratio showed progressive increase
278                         In control subjects, magnetization transfer ratio was highest adjacent to the
279 ptic neuritis, normal-appearing white matter magnetization transfer ratio was lowest adjacent to the
280 .4-T magnetic resonance imaging examination, magnetization transfer ratio was measured as an index of
281 erosis, tissue abnormality-as assessed using magnetization transfer ratio-increases close to the late
282 the MDD group, MT studies demonstrated lower magnetization transfer ratios (MTR), a marker of abnorma
283 l advantages over (1)H NMR using traditional magnetization-transfer and/or two-dimensional methods.
284 ments could be hyperpolarized by spontaneous magnetization transfers from bound (13)C nuclei followin
285 in the GaMnAs layer, but are negligible when magnetization transitions occur in Fe.
286                                   Saturation magnetization value obtained for MMIP was 1.72emug(-1).
287 led study of the different components of the magnetization vector as a function of temperature, appli
288                A significant lowering of the magnetization was observed for the nitrogen-doped carbon
289 ckness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapph
290 tion dynamics excited in an SHO with oblique magnetization when the SHE and i-DMI act simultaneously.
291 gurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and
292 d erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy.
293 s attributed to the H KS and M S (saturation magnetization) whose peaks also occur at the same temper
294 Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, whereas in tri
295 arch on pathways to control the direction of magnetization with an electric field.
296 c superparamagnetic responses with saturated magnetization with circular contours, as observed for th
297  measurements reveals slow relaxation of the magnetization, with an effective thermal relaxation barr
298               We imaged the structure of the magnetization within a soft magnetic pillar of diameter
299 netic field needed to flip the ferromagnetic magnetization within femtosecond timescale is unphysical
300 cal deterministic switching of perpendicular magnetization without any assistance from an external ma

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