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1 ssal magnetoresistance in manganese oxides ('manganites').
2 which is enhanced by phase separation in the manganite.
3 dr)oxide that was composed of hausmanite and manganite.
4 and orbitally ordered phase in a perovskite manganite.
5 ormation of thermodynamically more favorable manganite.
6 d change of domain-wall pairs in a hexagonal manganite.
7 degrees C by using yttrium-based rare earth manganites.
8 MIT leads to first-order transition in these manganites.
9 and charge ordering, two key features of the manganites.
10 agnetic transition and compared with that in manganites.
11 lated solids such as pnictides, cuprates and manganites.
12 e antiferromagnetic charge-ordered states in manganites.
13 agnetic, and fully antiferromagnetic bilayer manganites.
14 to the repeating unit seen in the perovskite manganites.
15 as well as in colossal magnetoresistance in manganites.
16 romagnetic metal for the CMR effect in doped manganites.
17 rs and the colossal magnetoresistance in the manganites.
18 nge strains are known to be important in the manganites.
19 erties of epitaxial thin films of perovskite manganites (a class of doped Mott insulator) as their co
21 or the deuterons in the tunnel structures of manganite and groutite, which could be explained by cons
22 reaction intermediate that is converted into manganite and possibly hausmannite during further reacti
23 rol and manipulation of orbital order in the manganites and demonstrate a new way to use THz to under
24 Kondo insulators, colossal magnetoresistive manganites and high-transition temperature (high-T(c)) c
25 of colossal magnetoresistance in perovskite manganites and illustrates the role of mixed-phase coexi
27 ewed here by applying several techniques for manganites and other materials are consistent with this
28 lude the 'colossal' magnetoresistance in the manganites and the enhanced magnetoresistance in low-car
29 xide (EMD), the model compounds groutite and manganite, and deuterium intercalated ramsdellite and py
30 to the two-dimensional nature of the layered manganite, and the loss of ferromagnetism is attributed
33 of numerous topological defects in hexagonal manganites are highly relevant to vastly different pheno
35 ll-bounded" topological defects in hexagonal manganites are studied through homotopy group theory and
37 nge, whereas similar magnetic transitions in manganites are tuned by 50-70% chemical substitutions.
38 prates and colossal magnetoresistance in the manganites arise out of a doping-driven competition betw
39 de an atomic-scale basis for descriptions of manganites as mixtures of electronically and structurall
42 he interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from
43 al study of topological defects in hexagonal manganites based on Landau theory with parameters determ
45 lumns in the room temperature charge-ordered manganite Bi0.35Sr0.18Ca0.47MnO3 using aberration-correc
47 we demonstrate that the orbital domains in a manganite can be oriented by the polarization of a pulse
49 , but very little change in the shift of the manganite deuterons was observed, consistent with the st
51 at the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagn
52 well time; the high spin polarization in the manganite electrodes, which remains high right up to the
55 ous Mn(II), about 18% of the oxygen atoms in manganite exchange with the aqueous phase, which is clos
56 r example, multiferroic hexagonal rare earth manganites exhibit a dense network of boundaries between
57 l involving the Ce(IV) f orbitals.Perovskite manganites exhibit intriguing but poorly understood prop
58 phases of correlated materials: for example, manganites exhibiting colossal magneto-resistance suitab
61 The total charge observed for the insulating manganite films quantitatively agrees with that needed t
65 reductive transformation of birnessite into manganite (gamma-MnOOH), whereas at pH 8.0 and 8.5, conv
68 or catalytic action, and numerous studies of manganites have linked electroresistance to electrochemi
69 s that this effect is general to all cuprate/manganite heterostructures and the presence of direct bo
71 The ground-state electronic order in doped manganites is frequently associated with a lattice modul
72 phenomenon of colossal magnetoresistance in manganites is generally agreed to be a result of competi
73 ects in epitaxial films of the ferromagnetic manganite La(0.7)Ca(0.3)MnO(3) using strain-mediated fee
77 re can be stabilized in five-unit-cell-thick manganite layers in superlattices, placing the upper lim
78 ults in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage.
81 rature dependences could be used to identify manganite-like domains within the sample of groutite, wh
83 with water, suggesting that some of the bulk manganite mineral (i.e., beyond surface) is exchanging w
84 e structure showed high Mn in the veins, and manganite [Mn(III)] accumulated in necrotic lesions appa
85 ectrodes, which remains high right up to the manganite-nanotube interface; and the resistance of the
88 cs of antiferromagnetic spin ordering in the manganite Pr(0).(7)Ca(0).(3)MnO(3) following ultrafast p
91 d manipulated at room temperature, hexagonal manganites provide a unique opportunity to explore how t
93 over, the high levels of disorder typical of manganites result in behaviour similar to that of well-k
94 closer inspection of phase diagrams in many manganites reveals complex phases where the two order pa
95 electricity (trimerization) in the hexagonal manganites RMnO3 leads to a network of coupled structura
96 spin-reorientation transitions of hexagonal manganite single crystal and thin films and compare dire
98 hases within the same sample of a perovskite manganite, such as La(1-x-y)Pr(y)Ca(x)MnO3, presents res
99 he hysteretic behavior in strained thin film manganites, suggesting close connection between the glas
103 direct observation of structural domains on manganite surfaces, and trace their origin to surface-ch
106 e show for the quasi-two-dimensional bilayer manganites that only the outermost Mn-O bilayer is affec
107 n observed in many colossal magnetoresistive manganites, there is no consensus that they are spin gla
108 ol of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical comp
110 tomic-resolution the charge distribution for manganite-titanate interfaces traversing the metal-insul
113 f the electronic phase of a magnetoresistive manganite via direct excitation of a phonon mode at 71 m
114 and G-AFM states, which is in contrasted to manganites where a similar magnetic phase transition tak
115 ic strain, contrasting with other half-doped manganites, where AF order has no observable effect on t
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