ライフサイエンスコーパス: nanowire

1 rmonic generation in a single hexagonal GaAs nanowire.

2 anning tunnelling microscope tip with a gold nanowire.

3 hain of InAs quantum dots embedded in an InP nanowire.

4 ighly composition-segregated platinum-nickel nanowires.

5 irection to yield heterobimetallic metal-oxo nanowires.

6 arbon nanotubes (MWCNTs) encapsulating boron nanowires.

7 ier concentration modulation in Mn-doped ZnO nanowires.

8 de materials than solid Si nanoparticles and nanowires.

9 compare them with solid Si nanoparticles and nanowires.

10 end on the cross-sectional dimensions of the nanowires.

11 cally protected surface states in the Sb2Te3 nanowires.

12 o create hybrid materials such as conductive nanowires.

13 ion of the quantum-dots embedded in parallel nanowires.

14 ircling the rectangular cross-section of the nanowires.

15 ven using confined nanocrystals, nanorods or nanowires.

16 ion of a metasurface composed of tilted gold nanowires.

17 ultra-transparent electrodes based on silver nanowires.

18 ranges reported for moderately doped silicon nanowires.

19 ion of 360 degrees domain walls in Py and Co nanowires.

20 velengths and mean free paths in Si and SiGe nanowires.

21 tated the excessive dissolution of Sn in the nanowires.

22 late magnetic charge states in ferromagnetic nanowires.

23 ion at the surface or within the bulk of the nanowires.

24 similar to the reported length of Geobacter nanowires.

25 f the structural information from all the Ag nanowires.

26 ic domain wall pinning in soft ferromagnetic nanowires.

27 sections, representing the smallest possible nanowires.

28 orthorhombic Ta3N5 nanoparticles and WOx</=3 nanowires.

29 lectrical testing on single-crystalline GeTe nanowires.

30 ration and self-assemble into semiconducting nanowires.

31 of domain walls in rare earth-doped Ni80Fe20 nanowires.

32 conductance in the surface bands of 50-nm Bi nanowires.

33 on nanotubes embedded highly crystalline ZnO nanowires.

34 l made of flakes of black-phosphorus or InAs nanowires.

35 1> directions as faceted, single-crystalline nanowires.

36 actly touching their neighbors inside the Ga nanowires.

37 efined by gate voltages in indium antimonide nanowires.

38 top electrode for hybrid radial-junction ZnO nanowire/a-Si:H p-i-n thin-film solar cells.

39 spectrum by simply moving the height of the nanowires above a metallic mirror.

40 Highly porous metal nanowire aerosponges are produced by direct assembly of

41 Silver nanowire (Ag-NW) thin films have emerged as a promising

42 ded to increased toxicity compared to silver nanowires (AgNWs).

43 Moreover, single nanowire and nanogroove were fabricated based on the sam

44 the Debye length limitation associated with nanowire and nanoribbon biosensors.

45 te theoretical extraction of heat spectra in nanowires and contributes to elucidate the development o

46 mensional (0D) objects such as particles, 1D nanowires and fibres, 2D films and coated surfaces, and

47 calable approach, where MoOx/MoS2 core-shell nanowires and molybdenum disulfide sheets are exposed to

48 od, in particular, the fabrication of single nanowires and nanogrooves could be a promising alternati

49 In this work, well-controlled and aligned nanowires and nanogrooves with widths as small as 40 nm

50 ended gold nanostructures, such as nanorods, nanowires and nanosheets, with nanosecond coalescence ti

51 id process enables the fabrication of single nanowires and nanowire arrays encased in a preform mater

52 injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room te

53 (1.15), better than the other mesoporous Pt nanowires and the commercial Pt black catalyst.

54 tochastic pinning at single notches in thick nanowires and the intrinsic stochasticity of pinning at

55 esoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads.

56 nning at artificial defect sites in Ni80Fe20 nanowires, and demonstrate its abilities by correlating

57 pendent properties typical of nanoparticles, nanowires, and thin films, nanolattices redefine the lim

58 n of the lengths and diameters of individual nanowires, and we find that the flux over the entire nan

59 tracellular electron transport via Geobacter nanowires, and what mechanisms control this reduction.

60 ent with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-s

61 Two-dimensional networks made of metal nanowires are excellent paradigms for the experimental o

62 The prepared mesoporous Pt nanowires are highly active and stable electrocatalysts

63 Semiconductor nanowires are ideal for realizing various low-dimensiona

64 Catalytically grown nanowires are ideal systems for studying the fundamental

65 substrate-materials-supported platinum-based nanowires are obtained, which paves the way to practical

66 Domain walls in ferromagnetic nanowires are potential building-blocks of future techno

67 hese structural effects, networks containing nanowires are shown to acquire transparency exceeding th

68 The as-grown nanowires are single crystalline with well-formed facets

69 The nanowires are stable in the electrochemical conditions a

70 hat optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lowe

71 cate a 50 nm-wide organic single-crystalline nanowire array on a centimeter-sized substrate via a fac

72 bly achieve 3D nano-device stacks of 32 x 32 nanowire arrays across 6-inch wafer, using electron beam

73 hermal properties of the as-prepared Ni3V2O8 nanowire arrays are carried out and their morphology has

74 Ultralong, highly oriented Ni nanowire arrays are used as the electrode scaffold to su

75 bles the fabrication of single nanowires and nanowire arrays encased in a preform material within a s

76 Flexible lead-free ferroelectric ceramic nanowire arrays exhibit a unique combination of features

77 ng-term stability of wurtzite p-GaN oriented nanowire arrays is revealed.

78 composition general and results in oriented nanowire arrays on transparent conductive substrates.

79 The prepared ZnO@ZIF-CoZn core-sheath nanowire arrays show greatly enhanced performance not on

80 a wide variety of applications, the Mo17O47 nanowire-arrays synthesized previously by electrically-h

81 investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal n

82 paper focuses on the utilisation of silicon nanowires as the information storage element in flash-ty

83 rease in the phonon group velocity along the nanowire axis and changes in the phonon density of state

84 Early nanowire based devices, while efficient, are limited in

85 ledge, this is the first report on MWCNT-ZnO nanowire based immunosensor explored for the detection o

86 hotoanodes (nanotubes, nanorods, nanofibers, nanowires) based on titania, hematite, and on alpha-Fe2O

87 Thus, nanowire-based field-effect transistors show extremely h

88 These results have major implications where nanowire-based films are a desirable material for transp

89 as an amorphous atomic structure, an ordered nanowire-based framework and random submicrometre voids,

90 allows Geobacter pili to function as protein nanowires between the cell and extracellular electron ac

91 ated with the oxidation and reduction of the nanowire, between 0.8 and 1.5 V.

92 A nanowire bonding process referred to as gas-phase electr

93 ng of the lithiation mechanism of alpha-MnO2 nanowire by in situ transmission electron microscopy (TE

94 he radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while als

95 ous silicon (Si) nanoparticles and porous Si nanowires by in situ and ex situ transmission electron m

96 n waves propagating along subwavelength gold nanowires by performing phase- and polarization-resolved

97 local thermal conductivity along a single Si nanowire can be tuned to a desired value (between crysta

98 a few atomic layers on the surface of copper nanowires can greatly enhance their resistance to heat (

99 iconductor nanostructures, including silicon nanowires, carbon nanotubes, and graphene.

100 omposites by sequential growth of zinc oxide nanowire carpets followed by layer-by-layer deposition o

101 hat an electrochemically reduced SnO2 porous nanowire catalyst (Sn-pNWs) with a high density of grain

102 -crystalline all-inorganic halide perovskite nanowires composed of CsPbI3 (0.45 +/- 0.05 W.m(-1).K(-1

103 anic semiconductors (mobility) and inorganic nanowires (concentration), and resistivity was within th

104 The defect is the Si|X interface in a nanowire containing a delta-layer (X is C or Ge).

105 are for braiding is a network of crystalline nanowires coupled to superconducting islands.

106 n-Type III-nitride nanowires decorated with Ru sub-nanoclusters offer contr

107 position prepared by other methods, the cast nanowires deform nearly homogeneously with much lower st

108 Single FeGe2 nanowire devices were fabricated using e-beam lithograph

109 This suggests that modelling of such nanowire devices will require 1D models which include ma

110 y an electric field during growth to control nanowire diameter and growth direction.

111 The nanowires display excellent stability while stored and h

112 devices constructed with the red phosphorus nanowires displayed a typical I-V curve similar to that

113 te arrays of 1 Ki cells that have sub- 15 nm nanowires distant by 28 nm across 6-inch wafer.

114 Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as

115 se transition of porous Si nanoparticles and nanowires during the lithiation process reveal that they

116 able depletion of Cooper pair density at the nanowire edges.

117 Compared to pure ZnO nanowires, electrochemical activity of MWCNTs embedded Z

118 Zinc oxide nanowires electrodeposited epitaxially on a gold foil al

119 enabling face-on addition of precursors for nanowire elongation.

120 alable technique for the production of metal nanowires embedded in glass fibres by taking advantage o

121 gle, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from en

122 us-rich surface configurations of the jagged nanowires enhance ORR activity versus more relaxed surfa

123 abricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of l

124 InGaN/GaN nanowire ensembles can be excited over a wide wavelength

125 excellent frequency converter based on this nanowire excited using a femtosecond laser is demonstrat

126 The jagged nanowires exhibit an ECSA of 118 square meters per gram

127 solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stabi

128 fect it is necessary to study metallic glass nanowires fabricated differently.

129 n-shaped crown was formed on the tip of each nanowire, featured with concentric steps.

130 c antigen (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with Schottk

131 Silicon nanowire field effect transistors (NWFETs) are low noise

132 that SELFA, which incorporates an amplifying nanowire field-effect transistor biosensor, is able to o

133 lter the properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit

134 f acute myocardial infarction, using silicon nanowire field-effect transistors.

135 hat these results may aid in the adoption of nanowire films in industry, for applications such as tou

136 The NiO nanowire foam anode possesses low equivalent series resi

137 The NiO nanowire foam can be manufactured with bio-friendly chem

138 iwalled carbon nanotubes embedded zinc oxide nanowire for the ultrasensitive detection of carcinoma a

139 roduction of high-performance platinum-based nanowires for applications in catalysis and energy conve

140 could enable mass manufacturing of metallic nanowires for plasmonics and nonlinear optics applicatio

141 ion of these catastrophic changes of poly-Si nanowires for the first time, using scanning electron mi

142 other possible origins of zero-bias peaks in nanowires--for example, weak localization, Andreev bound

143 It reveals that the free-standing platinum nanowires form in the solid state via metal-surface-diff

144 The nanowires form via minimization of strain energy at the

145 ontrol the thickness of Bi2Se3 and to create nanowires from larger structures.

146 ction investigations on Ag five-fold twinned nanowires (FTNWs) have drawn controversial conclusions c

147 ea resulting from long, thin, densely packed nanowires generally leads to improved performance in a w

148 epitaxial growth for the precise control of nanowire geometry and density.

149 res were seeded onto Ti substrates with TiO2 nanowires grown under alkaline conditions at 240 degrees

150 d electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition.

151 Nanowire growth in a nano-confined space adopts a lattic

152 situ TEM measurements demonstrate catalyzed nanowire growth initially follows linear kinetics; chara

153 The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effe

154 itative development of strategies to control nanowire growth.

155 t the growth of ultra-long 1D red phosphorus nanowires (>1 mm) selectively onto a wafer substrate fro

156 e demonstrated results show that the silicon nanowire has excellent properties for detection of DENV

157 Quantum transport measurements of nanowire 'hashtags' reveal Aharonov-Bohm and weak-antilo

158 These nanowires have band-like electronic properties, low effe

159 ning and depinning processes of DWs in these nanowires have been studied by using focused magneto-opt

160 Zero-bias anomalies in topological nanowires have recently captured significant attention,

161 erization, specifically carbon nanotubes and nanowires, have had major contributions in the developme

162 attering at surfaces and predict and analyse nanowire heat spectra for different diameters and surfac

163 bX3 (X = Cl, Br, I, or alloy of two halides) nanowire heterojunctions with a pixel size down to 500 n

164 catastrophe" model, we demonstrate that the nanowire heterostructure electrostatic potential diverge

165 InGaN/GaN nanowire heterostructures are presented as nanophotonic

166 sults demonstrate the potential of InGaN/GaN nanowire heterostructures for the defined conversion of

167 in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials develop

168 es are produced by direct assembly of the Cu nanowire in situ during their synthesis.

169 as carbon nanotubes, graphene and inorganic nanowires in a polymer matrix are introduced.

170 Silver nanowires in conjunction with sputter-coated Al-doped Zn

171 o further explore the applications of copper nanowires in flexible and stretchable electronic and opt

172 t, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" gro

173 ne the volume fraction of coherently aligned nanowires in SEM images.

174 is wider than previously reported ranges for nanowires in the literature.

175 have found dominant alignment of the silver nanowires in withdrawal direction.

176 the present work, a novel material, niobium nanowires, in form of vertically aligned electrodes for

177 gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.

178 g of materials, or blending of nanofibres or nanowires into elastomers.

179 Incorporating luminescent CdTe nanowires into these fibres imparts the new property of

180 is droplet engineering can be used to modify nanowires into three dimensional structures, relevant to

181 ture and chemical composition of the growing nanowire is typically determined by global parameters su

182 stic switching effects in soft ferromagnetic nanowires is a critical challenge for realising spintron

183 e selective synthesis of high-purity Mo17O47 nanowires is achieved due to low oxygen partial pressure

184 e domain wall (DW) motion along the magnetic nanowires is of great importance for fundamental researc

185 uced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achiev

186 nant scattering wavelength of single silicon nanowires is tunable across the entire visible spectrum

187 Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping

188 confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconduct

189 unction with excellent stability makes these nanowire lasers attractive for device fabrication.

190 Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or prec

191 on, various approaches of PENGs based on ZnO nanowires, lead zirconate titanate (PZT), poly(vinyliden

192 AQDS), reduction extends beyond the reported nanowire length up to 40 mum into a layer of birnessite.

193 evice (ECD) array (10 x 10 pixels) and a ZnO-nanowire-matrix pressure sensor (ZPS), a pressure visual

194 s state and microstructure of metallic glass nanowires may differ from each other significantly depen

195 esolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental ev

196 -dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy.

197 The resulting 3D bicontinous nanowire network films exhibited a single diamond topolo

198 ion of surfactant-free, thin, platinum-based nanowire-network electrocatalysts.

199 Copper nanowire networks are considered a promising alternative

200 ctrical anisotropy in two-dimensional silver nanowire networks close at the percolation threshold.

201 plex quantum devices with a special focus on nanowire networks with a predefined number of supercondu

202 Self-catalyzed growth of axial GaAs1-xSbx nanowire (NW) arrays with bandgap tuning corresponding t

203 d Raman scattering at Au electrode 1 (E1)/Ag nanowire (NW)/4-aminothiophenol (4-ATP)/Au electrode 2 (

204 Topological insulators (TI) nanowires (NW) are an emerging class of structures, prom

205 Nanowires (NWs) are a major theme in chemosensor develop

206 e of sub-nanometer-diameter metallic Mo6 Te6 nanowires (NWs) driven by catalyzer-free thermal-activat

207 tric polarization in TiO2 -SrTiO3 core-shell nanowires (NWs) is reported.

208 Sodium yttrium fluoride (beta-NaYF4 ) nanowires (NWs) with a hexagonal crystal structure are s

209 m nanobrushes composed of oriented 1D silver nanowires (NWs) with aspect ratios of 10(2) -10(4) is re

210 l cesium lead halide (CsPbX3, X = Cl, Br, I) nanowires (NWs) with uniform diameters and tunable compo

211 excitation of isolated pristine crystalline nanowires of a small molecule n-type organic semiconduct

212 n X-ray microscopy (STXM) that in individual nanowires of layered V2O5, lithiation gradients observed

213 As compared with the nanowires of the same composition prepared by other meth

214 f aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted int

215 onic nanostructures obtained by printing the nanowires on a continuous metal film or graphene surface

216 isting of an array of metallic subwavelength nanowires on a transparent substrate, fabricated by usin

217 present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epit

218 and its variants self-assemble into peptide nanowires on two-dimensional nanosheets, single-layer gr

219 homogeneity in the distribution of modified nanowires over the electrode surface.

220 emonstrated, which has the structure of PVDF nanowires-PDMS composite film/indium tin oxide (ITO) ele

221 trolyte interface is essential for designing nanowire photoelectrodes that match the activity of thei

222 nherent asymmetry exhibited by semiconductor nanowires prepared by Au-catalyzed chemical vapor deposi

223 ffects from one such class of metallic glass nanowires prepared by casting using molecular dynamics s

224 tteries, the unique configuration of Ni3V2O8 nanowires presents enhanced capacitance, satisfying rate

225 of an ordered array of poly(para-phenylene) nanowires produced by surface-catalysed dehalogenative r

226 The Si nanowire product can be used as high-capacity Li-ion bat

227 sing on a one-dimensional spin-orbit-coupled nanowire quantum dot.

228 Here, the InGaN/GaN nanowires reach high sensitivities of up to 91microAmM(-

229 green chemistry approach to assemble copper-nanowires/reduced-graphene-oxide hybrid coatings onto in

230 use Coulomb-blockade spectroscopy in an InAs nanowire segment with epitaxial aluminium, which forms a

231 omposite elastomers where high quality metal nanowires serve as conducting paths.

232 -standing platinum and platinum-nickel alloy nanowires show improvements of up to 5.1 times and 10.9

233 a more sustainable method to produce silicon nanowires (Si NWs) in bulk quantities through the direct

234 using a Ta3 N5 nanotube photoanode and a GaN nanowire/Si photocathode with high photocurrents (>5 mA

235 Silicon carbide nanowires (SiC NWs) have attracted intensive attention i

236 al rings of isolated gold atoms over silicon nanowire sidewalls.

237 ted microfluidic channel on a p-type silicon nanowire (SiNW) array measured by a multiplexed electric

238 ameter have been observed for metallic glass nanowires, sometimes even in the samples with the same c

239 s, and we find that the flux over the entire nanowire surface (7-30 electrons nm(-2) s(-1)) is signif

240 for cTnI were covalently immobilized on the nanowire surface and the attachment of antibodies is cle

241 ically the bio-sensing capabilities of metal nanowire surface plasmons.

242 es in the scattering spectra of the incident nanowire surface plasmons.

243 to create the functional groups on MWCNT-ZnO nanowire surface that are effective for the covalent con

244 Bacterial colonisation of the nanowire surfaces was also assessed by confocal microsco

245 nt that can be generalized in other metallic nanowire syntheses.

246 have been used as a reducing agent in metal nanowire synthesis.

247 ults could apply to phase selection in other nanowire systems.

248 alyse DW pinning configurations in both thin nanowires (t = 10 nm) and thick nanowires (t = 40 nm) wi

249 in both thin nanowires (t = 10 nm) and thick nanowires (t = 40 nm) with both single (asymmetric) and

250 growth of organometallic sandwich molecular nanowires, taking the example of Eu-cyclooctatetraene (E

251 It is well known that one-dimensional nanowires tend to have better carrier mobility and mecha

252 erally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carr

253 As a specific example, we couple the nanowire to specific sites (bacteriochlorophyll) of the

254 d redox cofactors in electron transport from nanowires to metal oxides.

255 tous metal reducers that utilize conductive "nanowires" to reduce Mn(IV) and Fe(III) oxides in anaero

256 Solar cells with the composite nanowire top contacts attained a short-circuit current d

257 5Si4 phase while porous Si nanoparticles and nanowires transform to amorphous LixSi phase, which is d

258 full lithiation, solid Si nanoparticles and nanowires transform to crystalline Li15Si4 phase while p

259 Junction-less nanowire transistors are being investigated to solve sho

260 pact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gai

261 a single row of vortices is allowed inside a nanowire under perpendicular applied field, with an appr

262 direct transformation of bulk materials into nanowires under ambient conditions without the use of ca

263 e dimensions, which are converted into oxide nanowires upon heating in air.

264 l and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of

265 dified with poly(1-amino-9,10-anthraquinone) nanowires using a SiO2 template, is carried out; the ass

266 the synthesis of ultrathin Cu@Au core-shell nanowires using trioctylphosphine as a strong binding li

267 the fabrication of vertically aligned copper nanowires (v-CuNWs) using electrosynthesis on templates,

268 e synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assi

269 ctrochemical activity of MWCNTs embedded ZnO nanowires was found to be much higher.

270 ctor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their

271 GaSbxP(1-x) nanowires were synthesized by reactive transport utilizi

272 s) embedded highly oriented zinc oxide (ZnO) nanowires were synthesized by simple, low cost electrosp

273 dynamics is observed in Y3Fe5O12/Pt bilayer nanowires where ohmic heating of the Pt layer results in

274 pared products were silica nanoparticles and nanowires which have amorphous structures.

275 terial in deeply subwavelength multimaterial nanowires, which can yield strong variations in the effe

276 lso reducing the MoOx core in the core-shell nanowires, which leads to improved electrocatalytic perf

277 arization charges at the two ends of the ZnO nanowires, which leads to the tuning of the current to b

278 Ta2O5 nanoparticles, nanorods, nanotubes and nanowires while Ta2O5 nanofibers were prepared by electr

279 Filling the nanowire with 4 electrons per dot creates a synthetic sp

280 d electrochemical processes of a single gold nanowire with an optical imaging technique.

281 Here we report the fabrication of a LaB6 nanowire with only a few La atoms bonded on the tip that

282 h as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into

283 The mesoporous Pt nanowires with 15 nm mesopores exhibit a large electroch

284 coustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a lengt

285 he templated synthesis of uniform perovskite nanowires with controlled diameter (50-200 nm).

286 FeNi binary nanowires with gradient composition are fabricated by th

287 e towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybr

288 Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow grow

289 or synthesizing hierarchical platinum-cobalt nanowires with high-index, platinum-rich facets and orde

290 electro-optical material into multimaterial nanowires with metal-oxide-semiconductor and metal-insul

291 Semiconductor nanowires with precisely controlled structure, and hence

292 ets affords the formation of one-dimensional nanowires with repeating periodicity of approximately 10

293 growth of hybrid metal-organic chalcogenide nanowires with solid inorganic cores having three-atom c

294 The assembly of single-crystal FeGe2 nanowires with tetragonal C16 crystal structure shows an

295 en benzoin radicals to grow ultrathin copper nanowires with tunable diameters.

296 ements in an SIS junction induced in an InAs nanowire (with noise proportional to the partitioned cha

297 diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up to 9.2 at.%, far i

298 cessfully developed by embedding metallic Ni nanowires within an insulating poly(vinylidene fluoride)

299 uctive preparation of as-grown free-standing nanowires without supporting films allows us to study th

300 ication of this catalytic process in silicon nanowires yields dopant-dependent, massive and ordered 3