ライフサイエンスコーパス: optoelectronic

1 of key importance to enable high-performance optoelectronics.

2 key cross-cutting issue in photovoltaics and optoelectronics.

3 ry, anion sensing, photodynamic therapy, and optoelectronics.

4 mising applications in the area of terahertz optoelectronics.

5 d its applications, e.g., in spintronics and optoelectronics.

6 or emergent technologies beyond conventional optoelectronics.

7 pealing candidates for quantum computing and optoelectronics.

8 promising candidates for nanoelectronics and optoelectronics.

9 ductors with applications in electronics and optoelectronics.

10 carriers may enable the development of novel optoelectronics.

11 rest for energy storage, nanoelectronics and optoelectronics.

12 promising building blocks for new generation optoelectronics.

13 potential applications in nanophotonics and optoelectronics.

14 the development of the better performance of optoelectronics.

15 e dynamics, is a major need in photonics and optoelectronics.

16 pplications in the fields of electronics and optoelectronics.

17 re essential for high-performance integrated optoelectronics.

18 horus applications in infrared photonics and optoelectronics.

19 ve optical properties and great potential in optoelectronics.

20 aterials to complement graphene for advanced optoelectronics.

21 raft other solution-printed perovskite-based optoelectronics.

22 ing intensity of light in displays and other optoelectronics.

23 their applications in solar cells and other optoelectronics.

24 As is of primary importance to space applied optoelectronics.

25 nductors offering new strategies for quantum optoelectronics.

26 -gap semiconductors play the central role in optoelectronics.

27 emergence of a new field of research coined optoelectronics.

28 mising properties for near- and mid-infrared optoelectronics.

29 ng active materials for solution-processable optoelectronic and light-emitting devices.

30 ic phases that may be exploited in ultrafast optoelectronic and optospintronic devices.

31 terials is critical for their integration in optoelectronic and photonic device applications.

32 et printed, enabling scalable development of optoelectronic and photonic devices.

33 critical for integrating these materials in optoelectronic and photonic devices.

34 ide perovskites are materials with excellent optoelectronic and photovoltaic properties.

35 ith great prospects for applications such as optoelectronic and quantum information devices.

36 holds promise for future device concepts in optoelectronic and spin-based technologies.

37 erials are promising candidates for advanced optoelectronics and are used in light-emitting diodes an

38 ions in 2D beam steering, spectrum scanning, optoelectronics and beyond.

39 proach to controllably alter GO band gap for optoelectronics and bio-sensing applications.

40 e, which makes GO an attractive material for optoelectronics and biotechnology.

41 en key to its widespread adoption in organic optoelectronics and biotechnology.

42 h applications in very diverse areas such as optoelectronics and biotechnology.

43 chemical properties, with the corresponding optoelectronics and catalysis application being actively

44 sign the next generation of high-performance optoelectronics and integrated flexible circuits by opti

45 ally thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under

46 be multimodal building blocks of integrated optoelectronics and spintronics systems.

47 able the continued advancement of perovskite optoelectronics and to the improved reproducibility thro

48 rocessed electronic devices with mechanical, optoelectronic, and chemical properties not available fr

49 fabricate suitable devices for electronics, optoelectronics, and energy conversion.

50 e (MoS2) structures, in various electronics, optoelectronics, and flexible devices requires a fundame

51 w research paths in hybrid magneto-molecular optoelectronics, and the optical detection of spin physi

52 ic field is applied, which is a step towards optoelectronic application of bulk materials.

53 carrier mass are of particular interest for optoelectronic applications as they underpin the materia

54 emerged as promising candidates for various optoelectronic applications based on their diverse elect

55 tanding performance of halide perovskites in optoelectronic applications can be partly attributed to

56 chalcogenides in valley-based electronic and optoelectronic applications has recently been illustrate

57 s and on electronic properties important for optoelectronic applications relying on charge carrier ph

58 Optoelectronic applications require materials both respo

59 f great importance and determines its use in optoelectronic applications such as NIR optical switches

60 nt nanophotonic thermoelectric materials for optoelectronic applications such as non-bandgap-limited

61 uctors determine their functionality in many optoelectronic applications such as photovoltaics, photo

62 loited as transparent electrodes in numerous optoelectronic applications such as solar cells, light-e

63 ibbons hold great promise for electronic and optoelectronic applications, but the previously demonstr

64 ve been exploited for various electronic and optoelectronic applications, such as memories, photovolt

65 eld triplet excited states is vital for many optoelectronic applications, such as optical power limit

66 In emerging optoelectronic applications, such as water photolysis, e

67 Graphene is ideally suited for optoelectronic applications, with a variety of reported

68 onductors has revealed widespread success in optoelectronic applications.

69 arables, conformable image sensor, and other optoelectronic applications.

70 ic features, making it promising for various optoelectronic applications.

71 ke MoS2 are promising candidates for various optoelectronic applications.

72 emitting diodes, sensors, filters, and other optoelectronic applications.

73 e emerged as attractive hybrid materials for optoelectronic applications.

74 ls and crystalline substrates for a range of optoelectronic applications.

75 able after releasing pressure, promoting its optoelectronic applications.

76 to tune and tailor semiconductors for use in optoelectronic applications.

77 development of perovskite semiconductors for optoelectronic applications.

78 eteroatom-containing systems of interest for optoelectronic applications.

79 ve recently been exploited in a multitude of optoelectronic applications.

80 d-gap engineering desired for electronic and optoelectronic applications.

81 atomically thin lateral heterostructures in optoelectronic applications.

82 promising semiconductors for solar cells and optoelectronic applications.

83 strated in the development of electronic and optoelectronic applications.

84 ance versatility are needed for a variety of optoelectronic applications.

85 brightness and resolution to be suitable for optoelectronic applications.

86 gest CsPbX3 NWs as prospective materials for optoelectronic applications.

87 /inorganic hybrid nanostructures for diverse optoelectronic applications.

88 re, which is essential for many photonic and optoelectronic applications.

89 ing the applicability of meta-topologies for optoelectronic applications.

90 rious photonic, data storage, biomedical and optoelectronic applications.

91 t Cs2PdBr6 is a promising novel compound for optoelectronic applications.

92 sing candidates for flexible and transparent optoelectronics applications due to their direct bandgap

93 ve feature of semiconductor quantum dots for optoelectronics applications.

94 is presented, with a focus on linking their optoelectronic behavior with the performance of the orga

95 d and observed, opening up opportunities for optoelectronics, bio-sensing and other mid-infrared appl

96 groups, provide electrochemical, electronic, optoelectronic, catalytic, and biological properties wit

97 Optoelectronic characterizations show prominent photores

98 s, photovoltaics, logic rectifiers and logic optoelectronic circuits.

99 es that can be used as essential elements in optoelectronic circuits.

100 scalable manner, achieving a high density of optoelectronic components over the entire fiber length a

101 For many optoelectronic device applications, it is desirable to o

102 ied to other nano materials as well as other optoelectronic device applications.

103 open new paths for valleytronics and valley-optoelectronic device applications.

104 an artificially engineered nanostructure for optoelectronic device applications.

105 xcited carriers poses a serious challenge to optoelectronic device efficiency.

106 g, which are important in areas ranging from optoelectronic device fabrication to catalysis.

107 However, a soft form of the implantable optoelectronic device for optical sensing and retinal st

108 amic emission control of colloidal QDs in an optoelectronic device is usually achieved by changing th

109 se optically dark states significantly limit optoelectronic device performance.

110 ied as a human eye-inspired soft implantable optoelectronic device that can detect optical signals an

111 Here we demonstrate an optoelectronic device that integrates a TI with a photon

112 670 nm, which is the thinnest freestanding optoelectronic device to date, to the best of our knowle

113 GaAs based optoelectronic devices (e.g. solar cells, modulators, de

114 c and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for st

115 s for the realization of building-integrated optoelectronic devices and portable energy sources.

116 nction may be used for designing new quantum optoelectronic devices and sensors with a wide range of

117 tant step toward high-performance integrated optoelectronic devices and systems.

118 l applications in the graphene-silicon-based optoelectronic devices as it offers new possibilities fo

119 or the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

120 luorescent outputs of luminescent probes and optoelectronic devices based on fluorescent molecular ro

121 Optoelectronic devices based on hybrid perovskites have

122 stals are suitable for compact and efficient optoelectronic devices based on versatile and inexpensiv

123 alcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optic

124 on of an existing Nature Protocol describing optoelectronic devices for studying intact neural system

125 optical methods.Metal halide perovskites for optoelectronic devices have been extensively studied in

126 The emerging generation of quantum dot optoelectronic devices offers an appealing prospect of a

127 Here we analyze scaling laws for optoelectronic devices operating at micro and nanometer

128 s imperative for improving the efficiency of optoelectronic devices particularly infrared photodetect

129 This work can open the door for future optoelectronic devices such as electrically switchable g

130 xplosive development of novel electronic and optoelectronic devices that demand more-reliable power s

131 cation process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of

132 large-volume manufacturing of a plethora of optoelectronic devices that span far beyond photovoltaic

133 xhibit potential for use in highly sensitive optoelectronic devices through the localized surface pla

134 Conventional approaches to flexible optoelectronic devices typically require depositing the

135 iconductor nanocrystal quantum dots (QDs) in optoelectronic devices typically requires postsynthetic

136 ens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable

137 portant implications on the operation of all optoelectronic devices with donor/acceptor interfaces, s

138 be applied in integrated photonic elements, optoelectronic devices, and microcircuit chips.

139 e materials offer potential integration with optoelectronic devices, for simultaneous near-uniform el

140 Graphene is attractive for realizing optoelectronic devices, including photodetectors because

141 fficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostru

142 semiconductors have been explored in several optoelectronic devices, yet their use in molecular detec

143 onents of active layers in various thin-film optoelectronic devices.

144 nce for their applications in electronic and optoelectronic devices.

145 properties in multifunctional electronic and optoelectronic devices.

146 erests due to their excellent performance in optoelectronic devices.

147 or quantum wells has enabled high-efficiency optoelectronic devices.

148 ng, and emission processes in nanostructured optoelectronic devices.

149 arge transport mechanism in perovskite-based optoelectronic devices.

150 demonstrated their promise in electronic and optoelectronic devices.

151 on method to achieve substrate-free flexible optoelectronic devices.

152 ene layer, enabling hybrid magneto-molecular optoelectronic devices.

153 s in flexible and stretchable electronic and optoelectronic devices.

154 miconductor materials for solution-processed optoelectronic devices.

155 ntary building blocks of most electronic and optoelectronic devices.

156 toward their applications in electronic and optoelectronic devices.

157 n rendering high-performance and photostable optoelectronic devices.

158 d advanced integrated in-fiber electronic or optoelectronic devices.

159 elligent design of fast and highly efficient optoelectronic devices.

160 hical corannulene-based hybrid materials for optoelectronic devices.

161 eneration of highly nonlinear and integrated optoelectronic devices.

162 semiconductors with potential application in optoelectronic devices.

163 be used as the active component of efficient optoelectronic devices.

164 for the design of functional electronic and optoelectronic devices.

165 ric and piezoelectric generators, as well as optoelectronic devices.

166 , and have major potential for unprecedented optoelectronic devices.

167 or is critical to the performance of organic optoelectronic devices.

168 ansfer between carriers and photons in novel optoelectronic devices.

169 lex superstructures, optical biosensors, and optoelectronic devices.

170 l-optical processing, sensing and microscale optoelectronic devices.

171 on and morphology could be widely adopted in optoelectronic devices.

172 application in photovoltaic (PV) and related optoelectronic devices.

173 c owing to potential applications in organic optoelectronic devices.

174 s underlying novel high-speed electronic and optoelectronic devices.

175 y for the fabrication of high-performance 2D optoelectronic devices.

176 o the future of lead-halide-perovskite-based optoelectronic devices.

177 ed to enhance the photoresponse of nanoscale optoelectronic devices.

178 essential components for the development of optoelectronic devices.

179 feasibility for designing multifunctional 2D optoelectronic devices.

180 direction for developing fast and efficient optoelectronic devices.

181 hat substantially improve the performance of optoelectronic devices.

182 cates huge potential of these two effects in optoelectronic devices.

183 of flexibility in designing atomically thin optoelectronic devices.

184 junctions for next-generation electronic and optoelectronic devices.

185 ure development of high-performance wearable optoelectronic devices.

186 n be practically applied in high-performance optoelectronic devices.

187 ese materials attractive for multifunctional optoelectronic, electron transfer sensing, and other pho

188 o contrive next-generation chemical sensors, optoelectronics, energy harvesters, and converters.

189 Here we present a optoelectronic, external modulation technique applied to

190 e way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platf

191 illitesla, potentially enabling a variety of optoelectronic graphene device applications.

192 er transfer and miniaturized, thin, flexible optoelectronic implants, for complete optical control in

193 als and review some of their applications in optoelectronics, including lasing and photodetection, an

194 (imaging, diagnostics and therapeutics) and optoelectronic (light-emitting devices, transistors, sol

195 ating in a mixed-mode optical-electrical, or optoelectronic, manner.

196 d its few layer analogue, phosphorene, as an optoelectronic material.

197 f helically twisted molecular ribbons as the optoelectronic material.

198 ld be promising for the preparation of novel optoelectronic materials and high performance devices.

199 alide perovskites have emerged as successful optoelectronic materials with high photovoltaic power co

200 Rather than achieving detection via added optoelectronic materials, as is typically done in other

201 rystal structures have emerged as a class of optoelectronic materials, which combine the ease of solu

202 ations, ranging from biorelevant contexts to optoelectronic materials.

203 ould be carefully examined in characterizing optoelectronic materials.

204 Transient optoelectronic measurements combined with device simulat

205 Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structu

206 p toward the development of future monolayer optoelectronic memory devices.

207 nt ferroelectric-based solar cells and novel optoelectronic memory devices.

208 from 6 dB to 21 dB, demonstrating active, optoelectronic modulation of the laser frequency content

209 in the move to solution-processed functional optoelectronic nanomaterials.

210 bed using a cell phone camera or a hand-held optoelectronic nose.

211 character, which consequently affects their optoelectronic, optical, and plasmonic properties.

212 mide concentration is correlated to superior optoelectronic performance in CH3 NH3 PbBr3 .

213 able platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.

214 nd materials for use in optics, electronics, optoelectronics, photonics, magnetic device, nanotechnol

215 een studied to develop novel applications in optoelectronics, photovoltaics and green chemistry.

216 great promise for potential applications in optoelectronics, photovoltaics and thermoelectrics.

217 With this in mind, a purpose-built optoelectronics probe station capable of simultaneous op

218 to the basic ideas and their applications to optoelectronic processes in solids.

219 lay a crucial role in chemical catalysis and optoelectronic processes.

220 functionalities and superior electrical and optoelectronic properties (1-7) .

221 its organic-inorganic counterpart regarding optoelectronic properties and help explain the long carr

222 ution-processable materials with outstanding optoelectronic properties and high index of refraction,

223 , it has become a prime synthetic target for optoelectronic properties and in the design of metal com

224 nstrating high surface coverage and superior optoelectronic properties are fabricated.

225 the boratriazaroles, and the structural and optoelectronic properties are further influenced by the

226 nostructures are expected to have comparable optoelectronic properties as the conventional III-Nitrid

227 dely used in industry due to their excellent optoelectronic properties as well as the mature understa

228 solid-state structures determined and their optoelectronic properties characterized.

229 idinium(FA)-based perovskite showns superior optoelectronic properties including better stability tha

230 k provides a new framework to understand the optoelectronic properties of metal halide perovskites an

231 There is a focus on optoelectronic properties of the films and potential in

232 studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA.

233 halide stoichiometry plays a key role in the optoelectronic properties of the perovskite.

234 structural and dynamic disorder impacts the optoelectronic properties of these perovskites is import

235 nce of structural engineering to control the optoelectronic properties of this class of soft material

236 drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-

237 paraphenylene 2 has been synthesized and its optoelectronic properties studied by UV-vis spectroscopy

238 (MOFs) define emerging materials with unique optoelectronic properties that stem from the highly orga

239 s and have attributed the degradation in the optoelectronic properties to photochemical or field-assi

240 t polycrystalline thin films possess similar optoelectronic properties to single crystals.

241 ials to be explored on the nanoscale showing optoelectronic properties tunable with size and composit

242 the experimental and computationally derived optoelectronic properties uncovered a linear correlation

243 l, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much l

244 etal halide perovskites can exhibit improved optoelectronic properties when their dimensionality is r

245 ite films produced by MASP exhibit excellent optoelectronic properties with efficiencies approaching

246 has benefited from its outstanding intrinsic optoelectronic properties, including photoinduced polari

247 tubes provide unique chemical, physical, and optoelectronic properties, making them an important alte

248 the interaction strengths, and therefore the optoelectronic properties, of these molecules as solids.

249 sms, defect states, thin-film processing and optoelectronic properties, thereby enabling both convent

250 ng great excitement due to their outstanding optoelectronic properties, which lend them to applicatio

251 trix, holds promise for novel electronic and optoelectronic properties, with a variety of potential d

252 s critical for their solid-state packing and optoelectronic properties.

253 tovoltaic materials with their extraordinary optoelectronic properties.

254 solar cell materials due to their remarkable optoelectronic properties.

255 y creating molecular materials with valuable optoelectronic properties.

256 due to their unique interlayer coupling and optoelectronic properties.

257 he structure of the TADF materials and their optoelectronic properties.

258 d metal halide perovskites can improve their optoelectronic properties.

259 owing to their unique crystal structure and optoelectronic properties.

260 ]Naphthylene regioisomers exhibited distinct optoelectronic properties.

261 or industry infrastructure, and their unique optoelectronic properties.

262 ular materials with tailored and exploitable optoelectronic properties.

263 combine solution processing with outstanding optoelectronic properties.

264 ause of their unique interlayer coupling and optoelectronic properties.

265 lly impacts morphology, crystal quality, and optoelectronic properties.

266 The new CPP 2 exhibits peculiar optoelectronic properties: (i) fluorescence emission is

267 materials can be designed to express useful optoelectronic properties; however, achieving structural

268 al materials offers the possibility of novel optoelectronic properties; however, it remains challengi

269 a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- an

270 gap PVSCs are currently hindered by the poor optoelectronic quality of perovskite absorbers and their

271 ic acids upon film crystallization and final optoelectronic quality.

272 sible applications in low-power spintronics, optoelectronics, quantum computing and green energy harv

273 d these materials to the forefront of modern optoelectronics research.

274 devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels.

275 nment is remotely detected by a phase-locked optoelectronic sampling system.

276 lays an important role in the performance of optoelectronic semiconductor devices such as solar cells

277 (Au NBs) were fabricated on an electrode for optoelectronic sensing of fowl adenoviruses (FAdVs).

278 An optoelectronic sensor is a rapid diagnostic tool that al

279 A proposed optoelectronic sensor showed a linear relationship betwe

280 , instrumented with flexible electronics and optoelectronic sensors in a mechanically robust, ultrath

281 s that are relevant for fields as diverse as optoelectronics, solar energy conversion, and photobiolo

282 We present an optoelectronic switch for functional plasmonic circuits

283 the practical implementation of the proposed optoelectronic switch providing higher optical confineme

284 ly implantable, flexible, wirelessly powered optoelectronic system for the long-term manipulation of

285 tability and performance of perovskite-based optoelectronic systems, and can lead to the development

286 for realizing active metasurfaces and robust optoelectronic systems, with potential applications in i

287 l and dynamical disorder in perovskite-based optoelectronic systems.

288 gy provides new opportunities for integrated optoelectronic systems.

289 y an important role in emerging photonic and optoelectronic technologies, and understanding the rules

290 lar characterization, device fabrication and optoelectronic testing.

291 f these materials in organic electronics and optoelectronics, the construction of oligothiophene-base

292 Following its success in organic optoelectronics, the organic doping technology is also u

293 The emergence of optoelectronics, the recently shown possibility of stron

294 Owing to their promise in photocatalysis and optoelectronics, titanium based metal-organic frameworks

295 pplications spanning from smart materials to optoelectronics to quantum computation.

296 broad scope of applications in electronics, optoelectronics, topological devices, and catalysis.

297 into an external cavity set-up allowing for optoelectronic tuning of feedback into a quantum cascade

298 Optoelectronic tweezers (OET) or light-patterned dielect

299 considerations) yield a convenient tool for optoelectronics when the radiation field is treated clas

300 rates are ubiquitously used in photonics and optoelectronics, with glass and plastics as traditional