コーパス検索結果 (1語後でソート)
通し番号をクリックするとPubMedの該当ページを表示します
1 can be ascribed only to an oxygen-breathing phonon.
2 a minimum thermal occupancy of 0.19 +/- 0.01 phonons.
3 of RMLs owing to the dominance of incoherent phonons.
4 lations exceeds that of longitudinal-optical phonons.
5 ons of superconductivity and certain lattice phonons.
6 ence of scattering from acoustic and optical phonons.
7 nd detection mechanisms of coherent polar TO phonons.
9 onon interactions, plasmons, polarons, and a phonon analog of the vacuum Rabi splitting in atomic sys
13 r strong coupling between an infrared-active phonon and electronic transitions near the Weyl points t
15 ural transition and significant softening of phonons and gentle variation of carrier concentration co
18 electron scattering with discrete terahertz phonons and intermediate binding energy of approximately
20 es (SL) can lead to localization of coherent phonons and thereby reduces the lattice thermal conducti
21 ch electronic transitions strongly couple to phonons and vibrations, such as energy transfer in photo
28 coupling between FeSe electrons and the STO phonons are responsible for the enhancement of Tc over o
29 t from coupling between photons and acoustic phonons-are exceedingly weak in conventional nanophotoni
32 lation functions in an interacting system of phonons as well as the quantum discord between distinct
34 mass density increase endowing the flexural phonons, as they move with their group velocity, with re
36 hese observations are consistent with a slow phonon-assisted recombination pathway via the indirect b
39 nteractions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT
41 and higher and temperatures above 14 K, and phonon backscattering, as manifested in the classical si
42 nding carbon atoms, and the discrepancies of phonon bands between carbon atoms are responsible for th
43 that atomic mass modifications influence the phonon bands of bonding carbon atoms, and the discrepanc
45 perlattice with an electron-transmitting but phonon-blocking structure has emerged as a promising fle
48 le interfaces and few-period SLs through the phonon "bridge" mechanism, while it substantially reduce
49 In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain bo
51 lly focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by poin
53 dicate both are dynamically stable; electron phonon calculations coupled to Bardeen-Cooper-Schrieffer
56 idate our predictions for 19 compounds using phonon calculations, among which 17 have noncentrosymmet
57 thermal boundary conductance, where optical phonons can considerably enhance the conductance in a pr
59 transport of sound and heat, in the form of phonons, can be limited by disorder-induced scattering.
60 with the counterintuitive assignment of the phonon closer to the K point in the KM direction (outer
67 s phase transformations, strong longitudinal phonon cooling effect on the molten COD wave front, and
71 Our results suggest that strong electron-phonon coupling and its dramatic change should be incorp
72 As, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, sho
73 ctron-electron correlations enhance electron-phonon coupling in iron selenide (FeSe) and related pnic
76 and low phonon frequencies and good electron-phonon coupling leads to reasonably high calculated supe
77 teraction is the dominant source of electron-phonon coupling near room temperature, with scattering o
78 w Raman exponents arise from the unique spin-phonon coupling of isolated [Ln(Cp(ttt))2](+) cations.
79 ives from exciton fine structure and exciton-phonon coupling rather than broadening caused by the siz
84 quintuples which exhibited a strong electron-phonon coupling, and (ii) non-integer number of quintupl
85 originates from non-adiabatic polar electron-phonon coupling, and occurs when the frequency of plasma
86 n between ligand coordination modes and spin-phonon coupling, and therefore we propose that the exclu
92 ecular dynamics simulations and quantitative phonon-defect scattering rate analysis, where the behavi
95 her side of the interface, whereas, acoustic phonons directly coupling with high frequency optical ph
96 nce-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-pri
97 observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on
99 We demonstrate that these intrinsic forms of phonon dissipation are greatly reduced (by >90%) by nonl
101 from incoherent-phonon-dominated to coherent-phonon-dominated heat conduction in SLs when the number
102 ifestation of the transition from incoherent-phonon-dominated to coherent-phonon-dominated heat condu
103 en for surface electrons, both diffusion and phonon drag contributions are essential for the hole sur
106 We investigate the possibility of changing phonon dynamics by altering the crystal through acid etc
108 esent an important step towards engineerable phonon dynamics on demand and the use of glasses as low-
113 Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in or
114 in sensitivity, we visualized and controlled phonon emission from individual atomic-scale defects in
117 at graphene's edges, switchable atomic-scale phonon emitters provide the dominant dissipation mechani
118 d, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the bor
119 with the strong broadband absorption and low-phonon-energy crystalline environment of semiconductors
120 e by reexamining records of emitted acoustic phonon events during rock mechanics experiments under we
121 f up to 42 trapped ions, by tracing a single phonon excitation through interferometric measurements o
122 ctron interaction is analyzed by finding the phonon features involved in the process as depending upo
124 rature dependent and involve the trapping of phonons for meaningful lengths of time in defect-related
125 = 1 atm and the combination of high and low phonon frequencies and good electron-phonon coupling lea
126 nsity variation and oscillation at twice the phonon frequency for the valence bands are observed at t
127 tosecond coherent lattice motion at a single phonon frequency, and photoemission monitors the subsequ
132 superior aspects include band convergence, "phonon-glass electron-crystal", multiscale phonon scatte
135 finement effects result in a decrease in the phonon group velocity along the nanowire axis and change
136 ics simulations are conducted to investigate phonon heat conduction in SLs and RMLs with lattice impe
137 to resolve the 4D evolution of the acoustic phonons in a single zinc oxide rod with a spatial resolu
141 Raman process involves different valleys and phonons in the Brillouin zone, and it has not yet been f
142 onally dependent group velocities of optical phonons in the different crystallographic directions.
143 ain orientations), coupling between acoustic phonons in the fcc crystal and optical phonons on the L1
146 tablishing how charge carriers interact with phonons in these materials is therefore essential for th
147 e potential use of elastic vibrations (i.e., phonons) in information processing, for example, in adva
148 with various other excitations (for example, phonons) in their surroundings and are an ideal platform
149 acterized by a hardening of the A1g coherent phonon, in stark contrast with the softening observed up
150 e developed a method to capture the electron-phonon inelastic energy exchange in real time and have u
152 ce of the often-neglected effect of electron-phonon interaction on phonon transport in doped semicond
153 e of the main secondary species and electron-phonon interaction plays a fundamental role in their dyn
154 of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetim
156 se materials, despite scattering by electron-phonon interactions, due to the high transmission of pho
157 ures of many-body effects involving electron-phonon interactions, plasmons, polarons, and a phonon an
161 irectly coupling with high frequency optical phonons is shown to lower the overall conductance, espec
162 fusivity may suggest that it originates from phonons, its anisotropy is comparable with reported valu
165 model that explores how coherent delocalized phonon-like modes in DNA provide single-stranded "flexib
166 ort the conclusion that coherent delocalized phonon-like modes play an important role in DNA cyclizat
171 vity typically through either shortening the phonon mean free path or reducing the specific heat.
173 nm, at a length scale that exceeds the grey phonon mean-free path in this material by almost an orde
175 sing and decay of the spin arise from single-phonon-mediated excitation between orbital branches of t
176 We here predict by ab initio calculations phonon-mediated high-T c superconductivity in hole-doped
177 nic structure coupled with a self-consistent phonon method that takes phonon-phonon interaction and s
180 sence of longitudinal and transverse optical phonon modes and a great similarity of alkylammonium-bas
181 By investigating the phase instability, phonon modes and transport behaviours, not only do we fi
183 gy and the symmetry of the surface polariton phonon modes depend on the size of the nanocubes, and th
184 hich is attributed to the behavior of the TO phonon modes of B1 and B2 symmetries at low frequencies
187 arbon framework that produces high-frequency phonon modes, (ii) a steep-rising electronic density of
188 - and frequency-synchronized dynamics of all phonon modes, and indicates the formation of many-body c
189 rotation) and inhomogeneous (shear) acoustic phonon modes, which are compared to finite element simul
195 where there is a better overlap of acoustic phonons on either side of the interface, whereas, acoust
196 ustic phonons in the fcc crystal and optical phonons on the L10-side of the interface leads to a high
198 g of electrons into vibrating surface atoms, phonon oscillations can be observed on the atomic scale.
200 the electronic states, creation of coherent phonon pairs, and diffusion of charge carriers - effects
202 ference with periodic structures, as well as phonon particle effects including backscattering, the do
203 K with relatively larger contributions from phonon-phonon and electrostatic interactions for T > 110
204 h a self-consistent phonon method that takes phonon-phonon interaction and strong anharmonicity into
205 complished for weakly interacting systems of phonons, photons and electronic Fermi liquids; however,
206 optical losses still plague many approaches, phonon polariton (PhP) materials have demonstrated long
207 ves increased modal splitting of two plasmon-phonon polariton hybrid modes with temperature, which is
208 latforms to verify our predicted effect with phonon-polaritonic hexagonal boron nitride, plasmonic su
209 ge carriers in graphene couple to hyperbolic phonon polaritons (17-19) in the encapsulating layered m
210 tion of confinement and bandwidth offered by phonon polaritons allows for the ability to create highl
212 gonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy tra
213 material waveguides, as well as fermions and phonon polaritons in graphene and van der Waals crystals
214 erentially decay by the emission of pairs of phonon polaritons, instead of the previously dominant si
215 onal boron nitride, low-loss infrared-active phonon-polaritons exhibit hyperbolic behaviour for some
216 eveal multiple (up to ten) confined acoustic phonon polarization branches in GaAs nanowires with a di
221 ults show that the effective radius of these phonon quasi-bound states, the real-space distribution o
222 imply that neither well-defined electron nor phonon quasiparticles are present in this material.
225 locity, and scattering of both electrons and phonons saturates a quantum thermal relaxation time [For
226 s area has been achieved mainly by enhancing phonon scattering and consequently decreasing the therma
227 the simulation, we find that the anharmonic phonon scattering and interfacial anharmnic coupling eff
228 superparamagnetic fluctuations; and enhanced phonon scattering as a result of both the magnetic fluct
230 omes the typical bottleneck of weak electron-phonon scattering by coupling the electrons directly to
231 ped (GeTe)1-2x(GeSe)x(GeS)x is attributed to phonon scattering by entropically driven solid solution
233 sintering (SPS), which introduce additional phonon scattering centers such as excess solid solution
234 after the binder burnt off became effective phonon scattering centers, leading to low lattice therma
235 tion of Te in GeTe to reduce the kappalat by phonon scattering due to mass fluctuations and point def
238 and theoretical transport studies show that phonon scattering plays a significant role in microscopi
240 "phonon-glass electron-crystal", multiscale phonon scattering, resonant states, anharmonicity, etc.
241 functionalization constrains the cross-plane phonon scattering, which in turn enhances in-plane heat
248 termined from a quantitative analysis of the phonon-scattering properties associated with the modifie
249 g mechanism, wherein strong optical-acoustic phonon scatterings are driven by a mixture of 0D/1D/2D c
253 tration depth of optically-generated surface phonons so as to selectively probe the interface region,
254 h a strongly interacting incoherent electron-phonon "soup" picture characterized by a diffusion const
257 can always simultaneously open a gap in the phonon spectrum, lock-in all the characteristic symmetri
259 bound states, the real-space distribution of phonon standing wave amplitudes, the scattering phase sh
261 esults identify a new extraordinary electron-phonon superconductor and pave the way for further explo
262 ts illustrate the utility of the directional phonon suppression function, enabling new avenues for sy
263 e introduce a novel concept, the directional phonon suppression function, to unravel boundary-dominat
264 ing the information on the directionality of phonon suppression in this system, we identify a new str
266 e guided hybrid modes of photons and optical phonons that can propagate on the surface of a polar die
268 f Tl-rattlers along the c-axis, and acoustic phonons that likely causes the low lattice thermal condu
273 model is used to analyze the nonequilibrium phonon transport and to derive the intrinsic thermal con
274 ects can effectively manipulate electron and phonon transport at nanometre and mesoscopic length scal
276 e mode-by-mode understanding of electron and phonon transport for improving energy conversion technol
278 Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-
279 omprehensive physical description of thermal phonon transport in superlattices by solving the Boltzma
280 pose strategies that can suppress incoherent phonon transport in the above random multilayer (RML) st
281 ally demonstrate a path for achieving robust phonon transport in the presence of material disorder, b
283 ork demonstrates the important insights into phonon transport that can be obtained using ab-initio ba
284 h that enables electron transport as well as phonon transport to be manipulated could potentially lea
286 t transfer properties due to the dynamics of phonon transport, which constrain thermal conductivity (
287 ce dynamics together with their influence on phonon-transport is essential to explore and design crys
290 er that scattering from longitudinal optical phonons via the Frohlich interaction is the dominant sou
291 anomeshes has been previously interpreted by phonon wave effects due to interference with periodic st
292 lattice oscillations via nanostructuring and phonon-wave interference has the potential to significan
293 mplex co-existence of excitons, carriers and phonons, where a delayed buildup of excitons under on- a
294 ervalley scattering of electrons by acoustic phonons, which is essential for valley depolarization in
295 ng of molecular jumping rotational modes and phonons, which is established by carrying out high-resol
296 al cooling of clockwise and counterclockwise phonons, while simultaneously suppressing the hidden act
297 en the flexural corrugation and longitudinal phonons whose fast escape leaves behind a 2D-projected m
298 at the phoretic force is due to the flexural phonons, whose flow is known to be ballistic and distanc
300 ction electrons, followed by relaxation into phonons within picoseconds, and subsequent diffusion int
WebLSDに未収録の専門用語(用法)は "新規対訳" から投稿できます。