ライフサイエンスコーパス: photoluminescence

1 mission, contactless electroreflectance, and photoluminescence.

2 tum dots undergo thermally activated delayed photoluminescence.

3 pped in both their elemental composition and photoluminescence.

4 sion length is less than that extracted from photoluminescence.

5 m RMS and exhibit room temperature band edge photoluminescence.

6 , spectroelectrochemistry, and time-resolved photoluminescence.

7 process leading to anti-Stokes (blueshifted) photoluminescence.

8 ve characteristics, including direct-bandgap photoluminescence.

9 sition is seen that is also reflected in the photoluminescence.

10 hermalization and does not contribute to the photoluminescence.

11 modifying both its electric conductivity and photoluminescence.

12 vs 2.2 eV in the bulk) and room temperature photoluminescence.

13 lide perovskites shows a peculiar broad-band photoluminescence.

14 ide migration, with corresponding changes in photoluminescence.

15 y transfer is analyzed through time resolved photoluminescence.

16 of 100 picoseconds (ps) and room-temperature photoluminescence.

17 polyunsaturated fatty acids (PUFAs) on SWCNT photoluminescence.

18 tudied by contactless electroreflectance and photoluminescence.

19 hanism, resulting in vibronically structured photoluminescence.

20 s of all three Pb chalcogenides retain their photoluminescence, allowing for a detailed study of the

21 The total increase in photoluminescence amounts to 105-fold, which we show can

22 Photoluminescence and absorption spectra collected from

23 Photoluminescence and cathodoluminescence measurements s

24 Here, a new method for stabilizing the photoluminescence and charge state of color centers base

25 stals (nc-Ge) spatially resolved using micro-photoluminescence and detailed using temperature and pow

26 er scientists and researchers working in the photoluminescence and electrochemistry fields who are in

27 Photoluminescence and electroluminescence results are th

28 Associated photoluminescence and environmental stability of the thr

29 uding their absorption spectra, steady-state photoluminescence and excitation spectra, and phosphores

30 e we report on a combined magneto-transport, photoluminescence and infrared transmission study of Bi2

31 , and elucidate the magnetic-field effect on photoluminescence and its dependence on the intensity of

32 Time-resolved photoluminescence and labeling studies are consistent wi

33 ductor with a gap of 2.1 eV featuring strong photoluminescence and large exciton binding energy.

34 (pyridin-2-yl)benzo[d]thiazole ligand on the photoluminescence and LEC performance have been examined

35 nostructures display strong room-temperature photoluminescence and long carrier lifetime.

36 oward D- and L-Trp as shown in voltammetric, photoluminescence and molecular docking responses.

37 With VPE, hot photoluminescence and nanosecond photo-Dember effect are

38 nificance of shape of the nanostructure, the photoluminescence and paramagnetic characteristic of Gd2

39 Photoluminescence and photomodulated reflectivity measur

40 In this work, through systematic photoluminescence and photovoltaic analysis, a new ideal

41 Stable crystals showed marked increases in photoluminescence and radiative decay, attributed to the

42 firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer Mo

43 Optical imaging of TMDs using photoluminescence and Raman spectroscopy can reveal the

44 iton modes is evidenced in momentum resolved photoluminescence and reflectivity studies.

45 r3), characterise the optical absorption and photoluminescence and show that the optical properties o

46 ium gases have different effects on both the photoluminescence and the ESR contrast of nanodiamond NV

47 Furthermore, based on results of correlated photoluminescence and transient absorption measurements,

48 rties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL)

49 sion enhancing (a 15-fold enhancement in the photoluminescence) and carrier lifetime shortening (from

50 is solution processable, exhibits long-lived photoluminescence, and an optical band gap of 1.6 eV.

51 grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning trans

52 a, as shown through steady-state absorption, photoluminescence, and circular dichroism spectra, as we

53 their influence on the electronic structure, photoluminescence, and electric transport properties.

54 materials which exhibit high solution-phase photoluminescence, as well as molar absorptivities and S

55 roxyl radicals, the intensity of the emitted photoluminescence at 612nm significantly decreased.

56 cavities capable of enhancement of the MoS2 photoluminescence at the narrow cavity resonance.

57 peak of ZnO and by the formation of intense photoluminescence band, discovered in the visible range

58 s review deals with the redox properties and photoluminescence behavior of this collection of compoun

59 Hence, enhancing their photoluminescence by plasmonic nanostructures is critica

60 ted gold nanoclusters (AuNCs@ew) with bright photoluminescence by using chicken egg white proteins as

61 We demonstrate that enhanced photoluminescence can be robustly engineered via the pro

62 The bright photoluminescence can be tuned over nearly the entire vi

63 studies) and the solvent polarity dependent photoluminescence characteristics directly corroborate t

64 excited states and thereby of producing two photoluminescence colours are of fundamental and potenti

65 es over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrat

66 ration was signalled by pronounced power-law photoluminescence decay polarized along the same axis.

67 er diffusion plays a substantial role in the photoluminescence decay.

68 bstrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and

69 allowing the observation of layer-dependent photoluminescence down to the monolayer limit.

70 Here, we use excitation correlation photoluminescence (ECPL) spectroscopy to investigate the

71 l how externally measured rate constants and photoluminescence efficiencies relate to internal recomb

72 n-radiative recombination events to measured photoluminescence efficiencies.

73 (CH3NH3)3Bi2I9 film shows highly anisotropic photoluminescence emission and excitation due to the lar

74 te exciton to higher emission energy in both photoluminescence emission and optical reflection.

75 Angle dependence and thermal stability of photoluminescence emission arising from F8BT membrane la

76 are retained and these exhibit simultaneous photoluminescence emission enhancing (a 15-fold enhancem

77 hibit superior optical characteristics, with photoluminescence emission full width half maximum (FWHM

78 investigated, highlighting a non-Lambertian photoluminescence emission of membrane lattices with res

79 homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 microm at room t

80 to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper doping into CQWs

81 The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which

82 synthesizing highly water-soluble and strong photoluminescence-emitting CdS quantum dots (i.e., CdS-M

83 Typical photoluminescence enhancement from transition metal dich

84 s work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously d

85 renches in gold substrate, we report a giant photoluminescence enhancement of approximately 20,000-fo

86 Photoluminescence excitation and time-resolved photolumi

87 Using photoluminescence excitation spectroscopy, we identify a

88 As a result, the photoluminescence exhibits only a small full-width-half-

89 Both temperature dependent photoluminescence experiments and DFT calculations are p

90 linearity and distinct polarization in micro-photoluminescence experiments.

91 absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence

92 ergy-momentum dispersion relation studied in photoluminescence, featuring an anti-crossing between th

93 We measure increased photoluminescence from divacancy ensembles by up to thre

94 By comparing the photoluminescence from Er ions in the epilayer with a re

95 Photoluminescence from such defects may previously have

96 We observed enhanced photoluminescence from the 2D photonic crystal and the 1

97 g to the inversion symmetry in bilayers, the photoluminescence helicity should no longer be locked to

98 ce applications, based on their size-tunable photoluminescence, high optical stability and 'bottom-up

99 We report on a combined photoluminescence imaging and atomic force microscopy st

100 ty of approximately 20 nm using an optimized photoluminescence imaging method.

101 In contrast to Raman and photoluminescence imaging, third-harmonic generation mic

102 blue when stimulated either optically (i.e., photoluminescence in both solution and solid films) or e

103 This study further supports the origin of photoluminescence in CNP as a surface phenomenon correla

104 n-A/PSi surface resulted in the quenching of photoluminescence in comparison to bare PSi.

105 In addition, we observe strong photoluminescence in few-layer phosphorene at energies t

106 4a, 4b, and 5 show photoluminescence in the blue-green region of the spectr

107 notably the possibility of observing solvent photoluminescence in the spectra of 2D materials such as

108 nce of Au25(SR)18(-) clusters, the origin of photoluminescence in these clusters still remains unclea

109 diffraction analysis study, it emerged that photoluminescence (in the range 520-655 nm) was mostly a

110 tatic quenching of the [Ru(deeb)(bpz)2](2+*) photoluminescence intensity (PLI) by bromide was observe

111 luminescent uranium organic framework, whose photoluminescence intensity can be accurately correlated

112 nic array geometries, we have shown that the photoluminescence intensity can be enhanced and quenched

113 A novel method for demonstration of photoluminescence intensity distribution in upconverting

114 thermore, two dimensional spatially resolved photoluminescence intensity distribution study has been

115 y and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under re

116 experiment, we demonstrate modulation of the photoluminescence intensity from nearly fourfold quenchi

117 The photoluminescence intensity of the patterned FRET sensor

118 l devices due to its direct bandgap and high photoluminescence intensity.

119 uch applications can be seriously limited by photoluminescence intermittency in nanocrystal emission,

120 In situ pressure photoluminescence investigation suggests a reduction in

121 Delayed photoluminescence is assigned to thermal excitation of t

122 t porous Si films or nanoparticles are used, photoluminescence is retained in the grafted products, i

123 The degree of circularly polarized photoluminescence is tuned with magnetic field from -37%

124 determined by the limit of sensitive defect photoluminescence (less than 0.01% of the carbon atoms a

125 high 70% and causes a 3-fold increase of the photoluminescence lifetime, which are attributed to a co

126 ngle-photon emitters, do not blink, and have photoluminescence lifetimes of a few nanoseconds.

127 State degeneracy also broadens the photoluminescence linewidth at the single-particle level

128 ease the band-edge degeneracy and single-dot photoluminescence linewidth in CQDs by means of uniform

129 r mobility up to 52 cm(2)/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submilli

130 al NSOM measurement performing hyperspectral photoluminescence mapping of standard fluorescent beads.

131 Raman and photoluminescence mapping studies showed that a wide ran

132 We assign the photoluminescence measured for atomically flat TiO2(110)

133 this work we report on temperature-dependent photoluminescence measurements (15-300 K), which have al

134 X-ray diffraction and micro-photoluminescence measurements are used to show that the

135 Ultrafast transient absorption and photoluminescence measurements are used to track the for

136 Excitation spectra and time-resolved photoluminescence measurements confirm that Yb(3+) is bo

137 In this paper we report on time-integrated photoluminescence measurements on individual polymer wra

138 Photoluminescence measurements reveal an unusual blue-sh

139 otoluminescence excitation and time-resolved photoluminescence measurements reveal the excitation con

140 Time-resolved micro photoluminescence measurements show a 2.5 times enhancem

141 sing ex-situ AFM imaging, Raman mapping, and photoluminescence measurements trace the origin of monol

142 In this sense, voltammetric and photoluminescence measurements were conducted and the ex

143 Furthermore, in combination with photoluminescence measurements, the theoretical calculat

144 Through normally incident micro-photoluminescence measurements, we observe absorption an

145 state and time-resolved circularly polarized photoluminescence measurements.

146 rticles (AuNPs) but our understanding of the photoluminescence mechanisms of noble metals on the nano

147 Conventional Raman and photoluminescence methods have been used for detecting g

148 on study has been carried out using confocal photoluminescence microscope throughout the nanorod bund

149 ed free of autofluorescence with anti-Stokes photoluminescence microwell imager.

150 In addition to the excitonic photoluminescence near the absorption edge, we find a re

151 Modulation of photoluminescence of atomically thin transition metal di

152 for MoS2 and we observed a quenching of the photoluminescence of both TMD films that is recoverable

153 h respect to changes in the photon count and photoluminescence of GQDs based on interaction of target

154 his degradation gives rise to strong visible photoluminescence of NMP.

155 djacent aligned AuNRs and displayed quenched photoluminescence of P3HT.

156 Hence, the photoluminescence of the test line is modulated by the f

157 Investigation of photoluminescence of the two constitutive mineral phases

158 bstantial heterogeneity in the time-resolved photoluminescence of these emitters, which is dominated

159 ly, GO is added as a revealing agent and the photoluminescence of those sites protected by the comple

160 from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new direct

161 -pressure research, pressure-induced visible photoluminescence (PL) above 2 GPa near 2 eV is observed

162 modifications allowed for fine-tuning of the photoluminescence (PL) and ECL emission from blue to gre

163 s (QDs) on silver plasmonic resonators using photoluminescence (PL) and excitation spectroscopy along

164 Photoluminescence (PL) and time-resolved PL measurements

165 Here, we report high resolution Photoluminescence (PL) attributed to emission from indiv

166 In the present paper we report photoluminescence (PL) based immunosensor for the detect

167 3 (NGO) and the systematic quench of the NGO photoluminescence (PL) by Ce doping.

168 tionally, we provide the first time-resolved photoluminescence (PL) data for any corannulene-based co

169 GO-QDs) exhibit a significant enhancement in photoluminescence (PL) due to localized surface plasmon

170 otic susceptibility of bacteria by employing photoluminescence (PL) emission of photocorroding GaAs/A

171 s triplets can play in P3HT by analyzing the photoluminescence (PL) from isolated single-chain aggreg

172 A rapid and low cost photoluminescence (PL) immunosensor for the determinatio

173 ed device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved P

174 id shows a long room-temperature fundamental photoluminescence (PL) lifetime of ca. 660 ns, which is

175 eous broadening), have demonstrated improved photoluminescence (PL) line widths for cadmium chalcogen

176 t emission energy shift as large as 14 nm in photoluminescence (PL) mapping.

177 Bright green emitters with adjustable photoluminescence (PL) maxima in the range of 530-535 nm

178 Time-resolved micro photoluminescence (PL) measurements have been performed

179 Here we use a unique combination of confocal photoluminescence (PL) microscopy and chemical imaging t

180 ovskite films on their device performance by photoluminescence (PL) microscopy has now been studied.

181 Reversible switching of photoluminescence (PL) of carbon nanoparticles (CNP) can

182 The typical photoluminescence (PL) of monolayer MoS2 is however know

183 Here, we show that the photoluminescence (PL) of QD bioconjugates can also be m

184 n electron, resulting in an asymmetric trion photoluminescence (PL) peak with a long low-energy tail

185 -based small/wide angle X-ray scattering and photoluminescence (PL) probes, the NC-SL structural tran

186 f different sizes (ca. 2.5-100 nm) with high photoluminescence (PL) quantum yield (QY; ca. 15-55 %) a

187 The morphology, photoluminescence (PL) spectra and UV-vis spectra of the

188 g the temperature and polarization dependent photoluminescence (PL) spectra.

189 g in hybrid perovskites using absorption and photoluminescence (PL) spectroscopies.

190 copy (EDX), X-ray diffraction (XRD), UV-vis, photoluminescence (PL) spectroscopy, FT-IR, and cyclic v

191 ied using time-resolved variable-temperature photoluminescence (PL) spectroscopy, magnetic circularly

192 Photoluminescence (PL) studies show a correlation betwee

193 This material emits strong visible blue photoluminescence (PL) upon UV excitation.

194 Photoluminescence (PL) was used to estimate the concentr

195 The NWs have bright photoluminescence (PL) with a photoluminescence quantum

196 The synthesized GQDs show distinct blue photoluminescence (PL) with excellent quantum yield (QY)

197 s in the visible region and room temperature photoluminescence (PL) with long tau > 100 ns excited st

198 opy (TAS), UV-vis, electroluminescence (EL), photoluminescence (PL), and confocal PL mapping have bee

199 ced by these new materials are studied using photoluminescence (PL), and we find that 1 and 2 act as

200 Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy

201 from NMR-relevant concentrations (10 muM) to photoluminescence (PL)-relevant concentrations (0.1 muM)

202 -level splitting was achieved for tuning its photoluminescence (PL).

203 y stable, and show bright and size dependent photoluminescence (PL).

204 re studied by steady-state and time-resolved photoluminescence (PL).

205 rong second-harmonic generation and enhanced photoluminescence, plates with hexagonal dislocation spi

206 We report the quantum efficiency of photoluminescence processes of Er optical centers as wel

207 The photoluminescence properties are systematically and pred

208 Here, we report on the photoluminescence properties of a series of phenyl-ring

209 electron acceptors can differentially modify photoluminescence properties of CdTe QDs.

210 ty of colloidal nanocrystals with the unique photoluminescence properties of copper-doped semiconduct

211 shown that these defects also influence the photoluminescence properties of GaAsBi alloys.

212 It is proposed that this sensitivity of photoluminescence properties of lead-white pigments coul

213 d the Purcell effect collectively modify the photoluminescence properties of the semiconductor.

214 urtzite) plays a key role in determining the photoluminescence properties of these giant QDs, with on

215 colloidal nanocrystals, these materials have photoluminescence properties that are remarkably similar

216 possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering f

217 the influence of structural defects on their photoluminescence properties.

218 ers, and analyse their temperature-dependent photoluminescence properties.

219 ite thin single crystal, while the link with photoluminescence proves that the halide stoichiometry p

220 ddition, the simultaneous measurement of the photoluminescence provides an additional tool for the an

221 efficient bluish white-light emissions with photoluminescence quantum efficiencies of approximately

222 ffuse over 100 nm before radiating with >11% photoluminescence quantum efficiency (PLQE) at low tempe

223 Ws have bright photoluminescence (PL) with a photoluminescence quantum yield (PLQY) of about 30% afte

224 6 x 10(5)-fold enhancement in dark exciton photoluminescence quantum yield achieved through couplin

225 The abrupt increase in photoluminescence quantum yield at excitation energy abo

226 leading to a substantial enhancement of the photoluminescence quantum yield despite carrier trapping

227 d (CdSe)34 nanocrystal surface increases the photoluminescence quantum yield from 5% to an unpreceden

228 ifetime of 22.1(1) ns, the anion exhibited a photoluminescence quantum yield of 0.61(4) and fast quen

229 tate and results in an improved onset of the photoluminescence quantum yield roll-off at high excitat

230 oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent

231 cubic crystal structure, a 1.6-fold enhanced photoluminescence quantum yield, and a longer emission l

232 Their low photoluminescence quantum yield, however, makes them har

233 The LSC exhibits high photoluminescence quantum yield, low reabsorption, and r

234 ole to achieve very small DeltaEST with high photoluminescence quantum yield.

235 optical spectra, while maintaining the high photoluminescence quantum yields (>50%), sharp absorptio

236 The NWs are highly luminescent with photoluminescence quantum yields (PLQY) ranging from 20%

237 t exciton lifetimes are observed, while high photoluminescence quantum yields and essentially unalter

238 on in extinction coefficient and solid-state photoluminescence quantum yields approaching unity (PhiP

239 The relative photoluminescence quantum yields of the CDots with blue,

240 The photoluminescence quantum yields range from 40 to 52%.

241 , 3-OAr; x = 3, 4) were developed, featuring photoluminescence quantum yields up to 0.81(2) and lifet

242 The NCs exhibit high photoluminescence quantum yields, narrow emission line w

243 Photoluminescence quenching and transient absorption dat

244 ft of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monola

245 ow both enantioselective electrochemical and photoluminescence quenching capabilities of a graphene-r

246 /gamma-CD giving rise to an enantioselective photoluminescence quenching due to the tendency of chira

247 solar cell structures as well as independent photoluminescence quenching measurements give consistent

248 ve and specific detection of uranyl ions via photoluminescence quenching of CdS quantum dots.

249 tion was developed based on the principle of photoluminescence quenching of upon immunocomplex format

250 TU exhibited significantly a higher order of photoluminescence quenching responses when treated with

251 , and subsequently leads to a very effective photoluminescence quenching through phonon-assisted rela

252 conditions and characterize the films using photoluminescence, Raman and x-ray photoelectron spectro

253 h, the measurements, performed via ultrafast photoluminescence, relate the dependence of charge trans

254 In this manuscript we report the photoluminescence response of the metal dipyridophenazin

255 Photoluminescence results confirm high optical quality a

256 d Ta2O5 nanostructures were characterized by photoluminescence, scanning electron microscopy, UV-Visi

257 idant capacities were separately assessed by photoluminescence showing values ranged from 3.4mugmg(-1

258 Here, we report the observation of a photoluminescence sideband at high densities that cannot

259 the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at

260 haracterized by broadening of the near-field photoluminescence spectra compared to pure silicon NPs.

261 The photoluminescence spectra essentially maintain the same

262 omplexes appear in the temperature-dependent photoluminescence spectra of WS2 and WSe2 monolayers.

263 spectroscopy, UV-vis absorption spectra, and photoluminescence spectra.

264 Using time-resolved absorption and photoluminescence spectroscopies, we have investigated t

265 ed out using polarised micro-Raman and micro-photoluminescence spectroscopies.

266 Photoluminescence spectroscopy and characterization of a

267 Further, we demonstrate that solid-state photoluminescence spectroscopy can be used to probe thes

268 the instrumental method of analysis based on photoluminescence spectroscopy confirmed the feasibility

269 Photoluminescence spectroscopy of this material exemplif

270 Photoluminescence spectroscopy reveals that the bandgap

271 AgNPs/CQDs) were characterized by UV-vis and photoluminescence spectroscopy, Fourier transform-infrar

272 haracterizations, including BET measurement, photoluminescence spectroscopy, solid-state NMR, and X-r

273 chrotron X-ray diffraction and laser-excited photoluminescence spectroscopy, supported by density fun

274 ation is studied via ultraviolet-visible and photoluminescence spectroscopy.

275 s intermittently interrogated with Raman and photoluminescence spectroscopy.

276 , zeta potential, UV-visible absorption, and photoluminescence spectroscopy.

277 st-principles simulations with time-resolved photoluminescence, steady-state absorption and X-ray dif

278 Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical

279 tailed using temperature and power-dependent photoluminescence studies.

280 biexciton is identified by its time-resolved photoluminescence, superlinearity and distinct polarizat

281 m to be applied in a homemade, time-resolved photoluminescence system that successfully resolves the

282 e introduced quantum defects generate bright photoluminescence that allows tracking of the reaction p

283 nitride semiconductors was proposed based on photoluminescence thermal quenching.

284 Inaccessible via photoluminescence, these states are often probed using p

285 We attribute the change in SWCNT photoluminescence to the formation of oxygen-containing

286 ns with a pixel size down to 500 nm with the photoluminescence tunable over the entire visible spectr

287 ct is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, pot

288 From the transient near-infrared photoluminescence under various excitation power densiti

289 Photoluminescence upconversion quantum yield and lifetim

290 g), and an unprecedented further increase in photoluminescence upon light irradiation at 362 nm (seco

291 bstituted thiophenes have high quantum yield photoluminescence upon UV light irradiation.

292 o, the remaining nanocrystal charge quenches photoluminescence via non-radiative Auger recombination,

293 ) PbSe nanoplatelets (NPLs), with measurable photoluminescence, via oriented attachment directed by q

294 The circular polarization of the emitted photoluminescence was monitored as a function of the dif

295 ectroscopy were used to study the structure, photoluminescence, water uptake, mechanical and electrom

296 The C-dots showed strong photoluminescence with a quantum yield of 4%.

297 )(Py)](+) shows an instantaneous increase in photoluminescence with fibrillar Abeta (primary light-sw

298 rocavities exhibit pronounced defect-related photoluminescence with whispering-gallery-mode resonance

299 tunable bandgaps across the visible range in photoluminescence, with one of the materials' external e

300 d to a significant reduction in the external photoluminescence yield from the internal yield.