ライフサイエンスコーパス: resistivity

1 nd structure and anomalies in the electrical resistivity.

2 with most Te substituting Se has the highest resistivity.

3 d a corresponding increase in gap-junctional resistivity.

4 nal Cx40 expression increases gap-junctional resistivity.

5 raphene was processed to control its surface resistivity.

6 an order of magnitude decrease in electrical resistivity.

7 embrane resistivity and increasing cytoplasm resistivity.

8 biting both a large bulk band gap and a high resistivity.

9 resistance and extract the graphene channel resistivity.

10 be accounted for using classical electrical resistivity.

11 es more difficult, increasing the electrical resistivity.

12 fold increase in the effective intracellular resistivity.

13 only 30 Omega to graphene's room-temperature resistivity.

14 sublinear, temperature-dependent electrical resistivity.

15 veal the underlying mechanisms governing the resistivity.

16 nduced low-temperature plateau of electrical resistivity.

17 atively high charge carrier mobility and low resistivity.

18 diffusion, to directly affect the electrical resistivity.

19 itical step towards achieving films with low resistivity.

20 e isotropic one, with concomitant changes in resistivity.

21 s high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Omega .cm) metallic germanium of prec

22 an extremely high temperature coefficient of resistivity ~10%/K, simultaneously with a very low resis

23 simulation enables extraction of the contact resistivity (150-200 Omega microm(2)) and transfer lengt

24 that they are degenerately doped with a low resistivity (17 mohms x cm) similar to the bulk.

25 h different activation energies E(a) for the resistivity (180 K above 50 and 400 K below) are observe

26 uctivity (0.7 W m(-1) K(-1)), low electrical resistivity (5.2 mOmega cm), and high absolute Seebeck c

27 temperature (T(c,rho=0) of 21.5 K, where rho=resistivity), a small transition width (DeltaT(c)=1.3 K)

28 are investigated by complementary electrical resistivity, ac magnetic susceptibility and single-cryst

29 about 0.25 K, which is confirmed by the zero resistivity, AC magnetic susceptibility, and specific he

30 lled by a hysteretic anomaly in the in-plane resistivity accompanied by non-linear electrical transpo

31 n Dirac points appear as pronounced peaks in resistivity, accompanied by reversal of the Hall effect.

32 more than four orders of magnitude change in resistivity across the metal-to-insulator transition.

33 le and explained the discontinuous change of resistivity after metallization.

34 Computed resistivity agrees very well with existing shock compres

35 ivity of detwinned single crystals, with the resistivity along the shorter b axis rho(b) being greate

36 Using high resistivity amplifiers, (238)U(17)O2 and (238)U(18)O2 io

37 ne wafers of Tl(6)SeI(4) with detector-grade resistivities and good carrier transport of both electro

38 and antiferromagnetic phases with different resistivities and the origin of the GER effect is the st

39 which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compar

40 5.2 x 10(-3) Omega.cm (R(s) = 356 Omega/sq) resistivity and 93% transparency in the visible spectral

41 allic but shows anomalies near 150 K in both resistivity and d.c. magnetic susceptibility.

42 due to its high thermal stability, low bulk resistivity and diffusion barrier property.

43 P) near x approximately 0.14, as proposed by resistivity and Hall effect measurements.

44 Temperature-dependent electrical resistivity and heat capacity measurements reveal a bulk

45 reduced cell integrity by lowering membrane resistivity and increasing cytoplasm resistivity.

46 emically inactive due to its high electronic resistivity and low lithium-ion diffusivity.

47 for p-type samples in temperature-dependent resistivity and magnetic susceptibility data.

48 The resistivity and magnetic susceptibility of the compound

49 lux materials and have been characterised by resistivity and magnetisation measurements.

50 Resistivity and magnetization measurements reveal that t

51 Results show that electrical resistivity and phase responses correlate well with diss

52 direct ex vivo measurement of gap-junctional resistivity and quantitative connexin immunoblotting and

53 intrinsic challenges (e.g., high electrical resistivity and reactivity in air).

54 The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus t

55 Resistivity and Seebeck measurements performed on a beta

56 A clear relationship between electrical resistivity and selectivity is established across a rang

57 It is notable that the resistivity and sensitivity of the composite films can b

58 a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 x 10(-4) Omega-cm

59 Because resistivity and spin excitation anisotropies both vanish

60 an order of magnitude lower room temperature resistivity and superior chemical stability, compared to

61 ature, but the temperature dependence of the resistivity and the magnetic susceptibility data suggest

62 re dependent Seebeck coefficient, electrical resistivity and thermal conductivity measurements were p

63 ue is about half that of total intracellular resistivity and thus will be a significant determinant o

64 in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material.

65 The average resistivity and work function of epitaxial Cu3Ge thin fi

66 ur-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every varph

67 We report on a low-temperature upturn in the resistivity and, at temperatures below this resistivity

68 g arising from turbulence, dubbed 'anomalous resistivity', and thermal momentum transport are two mec

69 alies in magnetic susceptibility, electrical resistivity, and heat capacity measurements.

70 ults showed an Ohmic contact, low electrical resistivity, and improved CNT-substrate adhesion.

71 ied by variable temperature crystallography, resistivity, and magnetic susceptibility measurements, a

72 Unlike other materials, the resistivity anisotropy behaves very differently for elec

73 e T is Co or Ni) iron pnictides, an in-plane resistivity anisotropy has been observed.

74 d is characterized by a substantial in-plane resistivity anisotropy in the presence of a small in-pla

75 rface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic f

76 lations, which naturally explains the strong resistivity anisotropy or 'electronic nematic' behaviour

77 ctural transition, uniaxial stress induces a resistivity anisotropy, indicating a substantial nematic

78 rable with reported values of the electrical resistivity anisotropy.

79 s corresponding to the onset of the in-plane resistivity anisotropy.

80 transition, again similar to the electrical resistivity anisotropy.

81 nsport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are lik

82 h its Pauli-like magnetic susceptibility and resistivity are an order of magnitude larger than those

83 usceptibility, magnetization, and electrical resistivity are studied for these new layered chalcogeni

84 ethods; for example, unannealed samples have resistivities as low as approximately 1 kOmega and hole

85 ilm doped with 2.25 at.% W showed the lowest resistivity at 0.034 Omega.cm and respectable charge car

86 exhibiting a factor of two lower increase in resistivity at a width of ~15 nm, relative to the thin f

87 Furthermore, this material exhibits low resistivity at room temperature, and thus represents a t

88 the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentia

89 imetals, giving rise to their small residual resistivity at zero field and subject to strong scatteri

90 (AEM) sensor to produce extensive imagery of resistivity beneath Taylor Valley.

91 on p- and n-type (100) silicon substrates of resistivities between 0.001Omegacm and 0.005Omegacm.

92 orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline s

93 ode between different bands-we show that the resistivity bound becomes [Formula: see text] The coeffi

94 g atomic layer deposition decreased the film resistivity by seven orders of magnitude to values as lo

95 perature, we are able to tune its electrical resistivity by several orders of magnitude, similar to t

96 rnal magnetic field induced colossal drop of resistivity (by factor 10(4)) at B ~ 4T with further gig

97 Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MI

98 NMR and resistivity characterization of Ba8Au16P30 indicated par

99 reater contrast between the bulk and surface resistivities compared to other Bi-based topological ins

100 several orders of magnitude, similar to the resistivity contrast corresponding to the usually invest

101 The two states display resistivity contrast, which is exploited in phase-change

102 A strongly temperature-dependent resistivity contribution is observed above approximately

103 gs across the system, yielding an electrical resistivity cross-section to depths beyond 100 km.

104 Hall resistivity data showed a nonlinear magnetic field depen

105 (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi p

106 ~10 T was estimated from the field-dependent resistivity data.

107 py and resistivity measurement revealed that resistivity decreased with pressure and dramatically dro

108 Furthermore, the electrical resistivity decreased with pressure but exhibited differ

109 The resistivity displays the Arrhenius-type activated behavi

110 in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopp

111 ivity ~10%/K, simultaneously with a very low resistivity down to 0.001 Omega.cm, making these NWs pro

112 In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa re

113 e gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-n

114 described by cryo-SEM analysis, reduced soil resistivity, enhanced ion mobility and consequently enha

115 uced differences in vertical bulk electrical resistivity (ER) profiles and influenced the temporal ev

116 Anomalous resistivity evolution and the participation of spin in t

117 mine the thermal conductivity and electrical resistivity for Fe, Fe-Si, and Fe-O liquid alloys.

118 We obtain a rigorous upper bound on the resistivity [Formula: see text] of an electron fluid who

119 ogen into the films decreases the electrical resistivity from 613 +/- 60 (0 sccm N(2)) to 1.10 +/- 0.

120 sical property measurement results including resistivity, Hall coefficient (RH), and specific heat ar

121 ay diffraction, charge transport (electrical resistivity, Hall effect, magnetoresistance), magnetic m

122 For some representatives of this class, the resistivity has a linear temperature dependence, as is t

123 sulfate (PS), and low temperature electrical resistivity heating (ERH), to activate PS, to achieve re

124 a width of ~15 nm, relative to the thin film resistivity (i.e., an infinitely wide wire).

125 and in the laboratory support the anomalous resistivity idea but there has been no demonstration fro

126 Time-lapse electrical resistivity imaging (ERI) was used to monitor soil moist

127 f electron-electron scattering dominates the resistivity in a Landau-Fermi liquid, the ratio of the t

128 les and experimental study of the electrical resistivity in aluminum and copper samples under pressur

129 Controlled switching of resistivity in ferroelectric thin films is demonstrated

130 thermal conductivity and highly anisotropic resistivity in Li(1-x)Sn(2+x)As2.

131 -insulator transition temperatures and lower resistivity in narrower strips.

132 ies, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been reveal

133 t on the role of magnetic turbulence induced resistivity in the context of fast ignition of laser fus

134 measurements are reported, which allows the resistivity in the cortex, ventricle, fiber tracts, thal

135 the linear dependence on temperature of the resistivity in the electron-doped copper oxides is cause

136 In contrast, resistivity in the Hall bar geometry saturates to values

137 usceptibility, specific heat, and electrical resistivity in the layered compound YFe2Al10 demonstrate

138 In contrast, increased resistivity in the outer cell layers of Lim2(Gt/Gt) lens

139 Extended areas of low resistivity in the subsurface alongshore combined with h

140 dict the pressure response of the electrical resistivity in these metals.

141 re we present a method for studying material resistivity in warm dense plasmas in the laboratory, whi

142 actor 10(4)) at B ~ 4T with further gigantic resistivity increase (by factor 10(4)) at 15T.

143 The resistivity increase was observed to be minimized for th

144 te that, at room temperature, the electrical resistivity increases by around 4 folds from that of bul

145 ic fields, that is, unlike most metals whose resistivity increases under an external magnetic field,

146 These methods do result in samples whose resistivity increases with decreasing temperature, simil

147 The resistivity increases with decreasing temperature, sugge

148 ascular density decreased while the arterial resistivity index (RI) increased, followed by a decline.

149 Specifically, resistivity initially decreases due to increase of bicar

150 s(-1) while the twisted zwitterion is a high resistivity insulator.

151 Intracellular resistivity is a linear sum of that offered by gap junct

152 The resistivity is determined by matching the plasma physics

153 The inferred resistivity is larger than predicted using standard resi

154 l CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K a

155 At room temperature, its resistivity is low (0.36-0.49 muOmegam) and - like a met

156 gap formation, whereas linear-in-temperature resistivity is observed in the normal states of the high

157 Cx43) in determining human atrial myocardial resistivity is unknown.

158 ials systems, regardless of their electrical resistivity, is developed.

159 tal with large spin diffusion length and low resistivity like Cu or Al.

160 Near this composition these alloys exhibit a resistivity linear in temperature to 2 K, a linear magne

161 Bulk superconductivity was confirmed by resistivity, magnetic, and heat capacity measurements.

162 Thermal expansion, electrical resistivity, magnetization, and specific heat measuremen

163 x)Sn(31-y) (Ln = Gd, Dy) and the anisotropic resistivity, magnetization, thermopower, and thermal con

164 ro X-Ray diffraction, Raman spectroscopy and resistivity measurement revealed that resistivity decrea

165 lack of obvious superexchange pathways, and resistivity measurement shows that SrLa10Ir4O24 is an in

166 nique with Raman spectroscopy and electrical resistivity measurement to study Bi(Ni1/2Ti1/2)O3 perovs

167 The electrical resistivity measurement with V shape change signals the

168 is transition has been further verified with resistivity measurements and Raman spectra under high pr

169 Reproducible resistivity measurements are reported, which allows the

170 Two-probe dc resistivity measurements conducted within the DAC show t

171 Four-probe electrical resistivity measurements demonstrate that ReB(2) is the

172 Direct magnetization and electrical resistivity measurements demonstrate that the supercondu

173 The four-probe electrical resistivity measurements on a single-component molecular

174 The temperature-dependent resistivity measurements revealed pressure-induced metal

175 Single crystal resistivity measurements show thermally activated behavi

176 Comparison with time-resolved resistivity measurements suggests that the collapse of s

177 irst-principles calculations, and electrical resistivity measurements were carried out under high pre

178 Electrical resistivity measurements were correlated with dislocatio

179 absorption and vibrational spectroscopy, dc resistivity measurements, and optical observations.

180 ing in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, tran

181 ion, magnetic susceptibility, and electrical resistivity measurements.

182 not significantly change with extracellular resistivity, membrane capacitance, or membrane resistanc

183 s demonstrate the potential of field complex resistivity method for remotely monitoring changes in gr

184 magnetoresistance at temperatures above the resistivity minimum is always positive.

185 resistivity and, at temperatures below this resistivity minimum, an unusual magnetoresistance which

186 vity is larger than predicted using standard resistivity models, suggesting that these commonly used

187 est Antarctica in this region exhibits a low resistivity, moderately hydrated asthenosphere, and conc

188 s transduced with high gain (up to 200) into resistivity modulation for graphene.

189 A reversible resistivity modulation greater than eight orders of magn

190 e(1).(3) (BSTS) was found, showing high bulk resistivities of 1-10 Omega.cm and greater contrast betw

191 The electrical resistivities of all 12 compounds exhibit metallic tempe

192 of the longitudinal (rhoxx) and Hall (rhoxy) resistivities of disordered 2D amorphous indium-oxide fi

193 ystems, such as the fact that the electrical resistivity of 'dirty' metals always increases as the te

194 metallic properties with a room-temperature resistivity of 1.7 mOmega cm.

195 4Cl0.06 alloy has over tenfold improved bulk resistivity of 3.6 x 10(9) Omega cm.

196 is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of

197 The electrical resistivity of a poly(3,4-ethylenedioxythiophene):poly(s

198 re we use X-ray polarimetry to determine the resistivity of a sulphur-doped plastic target heated to

199 coefficient of coatings, MIM interfaces, and resistivity of Ag layers as a function of the Ag-TiAlN b

200 transition via measurements of the in-plane resistivity of detwinned single crystals, with the resis

201 e of a T(2) dependence of the dc (omega = 0) resistivity of different cuprate materials.

202 tures and report 8% change in the electrical resistivity of FeRh films.

203 annel recordings due to the large electrical resistivity of fused quartz.

204 detected that are inconsistent with the high resistivity of glacier ice or dry permafrost in this reg

205 d configuration (a mesoscopic effect) on the resistivity of macroscopic samples in the spin density w

206 , the sputter-grown V films also have a high resistivity of more than 200 muOmegacm.

207 0 mum long, 35 mum wide and 2 mum thick with resistivity of order 1.316x10(-3) Omega cm obtained by u

208 The resistivity of our beta-GeSe crystals measured in-plane

209 tals' optical loss, and the inefficiency and resistivity of semiconductor spin-based emitters at room

210 measurements of the low-temperature in-plane resistivity of several highly doped La2-xSrxCuO4 single

211 The high resistivity of the axon cap results in "signature" field

212 dentifying the right drug based on the chemo-resistivity of the cancer cells is not available and it

213 The resistivity of the composites is highly sensitive to str

214 For instance, the electrical resistivity of the ECA specimen on a pulp paper (6 x 10(

215 This results in a dramatic increase in resistivity of the films from 0.0061 Omega*cm to 0.59 Om

216 nce measurements were performed to determine resistivity of the intracellular pathway (Ri), which cor

217 comitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline sem

218 We found that the resistivity of the quantum critical metal Sr(3)Ru(2)O(7)

219 c species with a concomitant decrease of the resistivity of the solution.

220 7 gigohm/microm in 100 mM KCl, and the high resistivity of the space may result from the presence of

221 Here we show that the mobility and resistivity of this material undergo a transition from b

222 The planar resistivity of this unconventional metal exhibits a line

223 used models will not adequately describe the resistivity of warm dense plasma related to the viscosit

224 atures, hBN is outperformed by graphene, the resistivity of which is estimated to fall below 10(-3) O

225 h curved Arrhenius plots, a room-temperature resistivity of ~1 Omega cm, and a hole mobility that is

226 )/s at 100 mV of applied bias and a measured resistivity on the order of 1 Omega.cm.

227 on barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate.

228 hard radiation and high intrinsic electrical resistivity, over 10(11) Omega cm.

229 e-scales that may be attributed to the local resistivity profile at the target rear.

230 Measurements of brain slices revealed resistivity profiles correlated with the local density o

231 Examples are the resistivity quantum, h/e2 (h is Planck's constant and e

232 e are no precise measurements of cytoplasmic resistivity, R(c).

233 Gap junction resistivity, R(j), has been proposed as a key determinan

234 arrier density to reach the maximum residual resistivity ratio (RRRrho300K/rho5K) of 7.6.

235 d the ratio of the out-of-plane and in-plane resistivity reaching ~670.

236 As pH continues to decrease, the resistivity rebounds toward initial conditions due to th

237 At the highest pressure, resistivity reduced by five orders of magnitude and the

238 More importantly, resistivity remained much lower than its original value,

239 resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel

240 alue is consistent with the large electrical resistivity reported for beta-W in literatures and in th

241 i(1.5)Sb(0.5)Te(1.7)Se(1.3) with the highest resistivity reported.

242 xplore the sensitivity of time-lapse complex resistivity responses for remotely monitoring dissolved

243 Electrical resistivity results indicate that Pn = As, Sb, and Bi ar

244 sity structure, approximated from electrical resistivity, results in a geodynamic model that successf

245 port measurements showed a broadening of the resistivity (rho) and a decrease in T(c) (rho = 0) with

246 Second, the longitudinal resistivity rhoxx shows a linear magnetic field dependen

247 the assumptions that the specific cytosolic resistivity (Ri) and muscle fibre volume remained consta

248 Specific gap-junctional resistivity (Rj) correlated not only with Western immuno

249 Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K

250 Resistivity saturation was observed in the absence of ma

251 g models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic f

252 larization and anisotropy vanish whereas the resistivity sharply rises.

253 cting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-per

254 The resistivity signature of glacier ice at the site (100-15

255 body effects, and find that the Coulomb drag resistivity significantly increases for temperatures <5-

256 Variable temperature resistivity studies reveal a transition from a semicondu

257 iated with human right atrial gap-junctional resistivity such that increased total, gap-junctional, a

258 is sufficiently high and the bulk electrical resistivity sufficiently low that dissolution of edge su

259 etals, primarily because the high electrical resistivity suppresses the electronic thermal conductivi

260 revealed by seismic velocity and electrical resistivity surveys from three landscapes.

261 We applied the direct current resistivity technique to image conductivity changes in s

262 At the critical field, Hc, the full resistivity tensor is T independent with rhoxx(Hc) = h/4

263 The ionic conductors have higher resistivity than many electronic conductors; however, wh

264 s recognized experimentally by an electrical resistivity that is proportional to the square of the ab

265 anges in their microstructure and electrical resistivity, the large spin Hall angles measured are fou

266 terials, exhibit a linear in temperature (T) resistivity, the origin of which is not well understood.

267 , we show that in the region of the T-linear resistivity, the scattering rate per kelvin is well appr

268 resis are seen in both longitudinal and Hall resistivity: the first can be explained by the quantizat

269 ction of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperatu

270 the critical behavior of the specific heat, resistivity, thermopower, magnetization and susceptibili

271 nanowire and bulk silver, a unified thermal resistivity (Theta ~ T/k ) is used to elucidate the elec

272 data reveal a lithosphere of high electrical resistivity to at least 150 km depth, implying a cold st

273 he application side, large band gap and high resistivity to distinguish surface from bulk degrees of

274 sitive to protease digestion and had greater resistivity to nanoindentation by atomic force microscop

275 y with monolayer hBN, for which we measure a resistivity to proton flow of about 10 Omega cm(2) and a

276 We conducted electrical resistivity tomography (ERT) surveys at two sites on the

277 aluate groundwater discharge, and electrical resistivity tomography (ERT) was used to examine subsurf

278 onstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal

279 unusually large variation in the electrical resistivity under applied magnetic field.

280 ring results in a decrease in the electrical resistivity under pressure, which is more pronounced for

281 LPS can decrease resistivity up to a factor of ~10,000, resulting in valu

282 The resistivity upturn turns out to be qualitatively contrad

283 as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarith

284 l films, which exhibit a low-temperature (T) resistivity upturn with a pronounced T(1/2) dependence,

285 nprecedented insights into the origin of the resistivity upturn.

286 e Cu matrix, with control of the interfacial resistivity using the MWCNT/Cr7C3-Cu system.

287 ency method this allowed obtaining intrinsic resistivity values of brain tissues and structures with

288 ires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, b

289 h Cx43 expression showed no correlation with resistivity values, the proportional expression of the 2

290 stals, where signature of ZrTe3 CDW order in resistivity vanishes.

291 trast to other quantum critical systems, the resistivity varies linearly with temperature over a wide

292 and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for mod

293 These calculations for resistivity were based on electron-phonon scattering.

294 Regional-scale zones of low subsurface resistivity were detected that are inconsistent with the

295 conditions in the grain with high electrical resistivity, while the other grain with low resistivity

296 rlies an increase in human atrial myocardial resistivity with age, this relationship was investigated

297 work demonstrates an anisotropic increase in resistivity with decreasing width in single crystal tung

298 rical resistance and nonmonotonic changes in resistivity with strain.

299 influence of magnetic field and pressure on resistivity with the focus on possible manifestation of

300 xide (rGO) layer that changed its electrical resistivity with the temperature.