ライフサイエンスコーパス: sapphire

1 rmacogenomic Interactions by Race-ethnicity (SAPPHIRE).

2 rmacogenomic Interactions by Race-ethnicity (SAPPHIRE).

3 ickers hardness of 20 GPa, which is close to sapphire.

4 that of traditionally grown MoS2 on c-plane sapphire.

5 ergrowth method employing GaN microrods on m-sapphire.

6 properties compared to MoS2 grown on c-plane sapphire.

7 msec) than with SASHA (13 msec; P < .05) and SAPPHIRE (12 msec; P < .05).

8 he Raman peak area obtained at a sapphire or sapphire/50 nm Au interface.

9 5.6 msec; P = .07) but higher precision than SAPPHIRE (6.8 msec; P = .002) and SASHA (8.7 msec; P < .

10 using Nd:YAG (1064 nm) and tunable titanium-sapphire (700-990 nm) laser microbeam optical traps.

11 Sapphire (Al2O3) crystals are used below 100 GPa as anvi

12 laser-induced microexplosion confined inside sapphire (alpha-Al(2)O(3)).

13 re Co deposition on fully hydroxylated clean sapphire (alpha-Al2O3) produces a surface chemical react

14 Epitaxial films exhibited 3D growth on sapphire and 2D single-crystal quality on GaN, exhibitin

15 collisions with two distinctive substrates, sapphire and aluminum, across a broad range of collision

16 s by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is described herein.

17 nd optoelectronic devices on commonly used c-sapphire and Si substrates.

18 ts at High Risk for Endarterectomy registry [SAPPHIRE]) as well as registry data (ACCULINK for Revasc

19 ed silica boson peak (~130 cm(-1)); distinct sapphire ball-lens peaks (380, 417, 646, and 751 cm(-1))

20 from high-energy (500 muJ), 45-fs, 800-nm Ti:sapphire-based femtosecond laser electrospray mass spect

21 Above 100 GPa shock pressures, sapphire becomes opaque and electrically conducting beca

22 graphene supported on SiO(2) and Al(2)O(3) (sapphire), but negligibly on alkyl-terminated and hexago

23 cient laser modification of fused silica and sapphire by means of a burst of femtosecond pulses havin

24 ical field to drive the semimetallization in sapphire, calcium fluoride and quartz and to compare thi

25 f substrate, where growth of MoS2 on r-plane sapphire can yield >100x enhancement in PL and carrier l

26 n situ synchrotron XRD method using a quartz/sapphire capillary tube as the synthesis reactor.

27 We replicated associations in the SAPPHIRE cohort of African Americans (n=1056).

28 rmacogenomic Interactions by Race-ethnicity (SAPPHIRE) cohort.

29 FPALM images of PA-GFP on a terraced sapphire crystal surface were compared with atomic force

30 Our calculations indicate shocked sapphire does not metallize by band overlap at ~300 GPa,

31 t the short-wavelength limit of the titanium:sapphire excitation source.

32 ram for Hypertension and Insulin Resistance (SAPPHIRe) family study, and 759 participants were follow

33 An 800-nm Ti:Sapphire femtosecond laser oscillator with a 27-fs pulse

34 An 800-nm Ti:Sapphire femtosecond laser with a 100-fs pulse duration

35 rface electrons in n-doped samples with a Ti:sapphire femtosecond laser.

36 -photon absorbance of a frequency-doubled Ti:sapphire femtosecond laser.

37 a laser scanning microscope with a titanium sapphire femtosecond pulsed laser and transmission optic

38 on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were tra

39 oform of FGF2 with green fluorescent protein-sapphire (GFPsaph).

40 m a challenging model system, titanium-doped sapphire, illustrate the viability of the directed assem

41 rface containing a gold film relative to the sapphire interface by a factor of 4.3-4.6 for aqueous py

42 signal was recorded from a monolayer at the sapphire interface.

43 The core structure of dislocations in sapphire introduced by high-temperature plastic deformat

44 onger-term results to the highly experienced SAPPHIRE Investigators.

45 these high shock temperatures and pressures sapphire is in thermal equilibrium.

46 Laser ablation was executed with a Titanium:Sapphire laser (800-nm wavelength), focused with a 0.15-

47 Raman spectra are obtained using a 1 kHz Ti:Sapphire laser apparatus that provides <3 ps visible (46

48 ly mode-locked, pulse-picked femto-second Ti-sapphire laser as the excitation source for the determin

49 the femtosecond pulses from a mode-locked Ti:sapphire laser at 885 nm.

50 earlier studies using a femtosecond titanium:sapphire laser costing more than 100K, physically robust

51 predict that by using 700-nm light from a Ti:sapphire laser focused with a 1.3-NA objective, essentia

52 Here, we show that the Ti:Sapphire laser in a multiphoton microscope can be used t

53 d (750 nm) output from a modelocked titanium:sapphire laser is focused at the outlet of a 0.6-micron

54 97 nm from a tunable frequency-quadrupled Ti:sapphire laser provided high-quality UVRR spectra, conta

55 previously available, thanks to kilohertz Ti:sapphire laser technology, with frequency-quadrupling in

56 opulse diode laser trabeculoplasty, titanium sapphire laser trabeculoplasty and excimer laser trabecu

57 For imaging, a pulsed Ti:sapphire laser was used for sample excitation and fluore

58 ic Nd:YAG, and the femtosecond NIR 800 nm Ti:sapphire laser with regard to the type(s) of damage and

59 dded) were also imaged with a mode-locked Ti-Sapphire laser, (76 MHz repetition rate, 150 femtosecond

60 ne disruptions inflicted by a mode-locked Ti:sapphire laser, even those initially smaller than hemogl

61 frequency (2omega) of a femtosecond (fs) Ti:sapphire laser.

62 in the form of femtosecond pulses from a Ti:sapphire laser.

63 , Cu, Mo, Gd, and W) using 40 fs, 800 nm Ti: Sapphire laser.

64 owered by a 800-nm-wavelength mode-locked Ti:sapphire laser.

65 ins is limited by the low power output of Ti-Sapphire lasers above 1,000 nm.

66 een met using expensive femtosecond titanium:sapphire lasers.

67 nstrated using 100 fs pulses from a titanium-sapphire mode-locked laser to achieve molecular excitati

68 th 300-1000 psi of methane in single-crystal sapphire NMR tubes; clean second-order behavior was obta

69 The generalizability of trials like the SAPPHIRE or CREST to the Medicare population may be limi

70 ompared to the Raman peak area obtained at a sapphire or sapphire/50 nm Au interface.

71 analytes as a function of incident angle at sapphire or sapphire/smooth 50 nm gold interfaces using

72 ultiple quantum wells (MQWs) integrated on c-sapphire or Si substrates.

73 grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obt

74 sorption of pulses of 800-nm light from a Ti:sapphire oscillator, making them excellent candidate sto

75 In contrast to measurements at a bare sapphire prism, increased surface sensitivity and signal

76 ide resonance (PWR) interface consisted of a sapphire prism/49 to 50 nm Au/548 to 630 nm SiO(2) and a

77 ariate reference signals of fused silica and sapphire Raman signals generated from a ball-lens fiber-

78 The maser consisted of a sapphire ring housing a crystal of pentacene-doped p-ter

79 ix plum cultivars ('Laetitia', 'Primetime', 'Sapphire', 'Showtime', 'Songold' and 'Souvenir') produce

80 chemical vapour deposited graphene films on sapphire, silicon dioxide/silicon and germanium.

81 a function of incident angle at sapphire or sapphire/smooth 50 nm gold interfaces using 785 nm excit

82 neration (DFG) using spectrally broadened Ti:Sapphire spectrum, followed by optical parametric amplif

83 CEA in patients at increased surgical risk, SAPPHIRE (Stenting and Angioplasty with Protection in Pa

84 Previously, the pivotal SAPPHIRE (Stenting and Angioplasty with Protection of Pa

85 A mullite and sapphire structure predominates in these phases.

86 the brine solution is segregated next to the sapphire substrate after the formation of the ice phase.

87 l hydrates prefer to crystallize next to the sapphire substrate instead of the ice crystals and MgCl2

88 f sodium ions next to the negatively charged sapphire substrate may be responsible for disrupting the

89 s were performed side-by-side on a single 2" sapphire substrate to minimize experimental sampling err

90 th various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted

91 ent salts, MgCl2, CaCl2, and NaCl, next to a sapphire substrate using surface sensitive infrared-visi

92 nt a setup comprising a thermally conductive sapphire substrate with light-absorptive nano-coating, a

93 ccurs during the impact, especially with the sapphire substrate.

94 interface properties of exfoliated InSe on a sapphire substrate.

95 xy between monolayer WS2 and MoS2 on a c-cut sapphire substrate.

96 function of pH and the surface charge of the sapphire substrate.

97 formation of NaCl.2H2O crystals next to the sapphire substrate.

98 dy the freezing of a NaCl solution next to a sapphire substrate.

99 he epitaxial selective area growth of GaN on sapphire substrates and utilize them to enhance light ex

100 ization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputteri

101 0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor

102 of film thickness in nanocomposite films on sapphire substrates.

103 rable with that grown on conventional SiC or sapphire substrates.

104 sition temperatures of water in contact with sapphire substrates.

105 quilts perform even better in GaN devices on sapphire substrates.

106 W) arrays have been epitaxially grown on GaN/sapphire substrates.

107 egregation of concentrated brine next to the sapphire surface as we cool the system down to the regio

108 gram in Hypertension and Insulin Resistance (SAPPHIRe) to investigate associations between CRP polymo

109 Few patients met the SAPPHIRE trial or CREST enrollment criteria primarily be

110 (5.4%) was similar to the rate seen with the SAPPHIRE trial stent cohort (4.9%).

111 and exclusion criteria matched those of the SAPPHIRE trial.

112 erformance criteria (OPC) established by the SAPPHIRE trial.

113 in Patients at High Risk for Endarterectomy (SAPPHIRE) trial or Carotid Revascularization Endarterect

114 arder than cubic delta-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigi

115 rowth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbo

116 MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of 140

117 d faceted surfaces of commercially available sapphire wafers to guide the self-assembly of block copo

118 The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission el

119 ontrolled gallium nanoparticles deposited on sapphire were explored as alternative substrates to enha

120 Films on sapphire were n-type with electronic mobilities as high

121 phase, and that shock-wave experiments using sapphire windows need to be re-evaluated.

122 We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h.

123 ctra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atom

124 Comparison with films grown on sapphire without rips shows a combined contribution from

125 SASHA and SAPPHIRE yield higher accuracy, lower precision, and sim