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1 The P = 1 atm structures are all semiconducting.
2 FeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) sub
3 ort on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)(n-1)Pb(n)I(3n+
4 stance between the consecutive layers of the semiconducting 2D material and dynamically reduces its b
7 state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition
9 aspects of graphene and the new families of semiconducting 2D materials, like transition metal dicha
10 he process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase.
12 bands that overlap near the Fermi level, but semiconducting 2H-MoTe2 is more stable and therefore mor
14 c properties of purified, solution-processed semiconducting (6,5) single-walled carbon nanotubes (SWC
18 ilm exhibit metallic along [100], but remain semiconducting along [010] under application of a magnet
20 essure range of 28.2-61.7 GPa, where a mixed semiconducting and metallic feature is observed due to t
21 sively explain why tetragonal FeS shows both semiconducting and metallic responses in contrast to tet
22 s demonstrated to enable isolation of single semiconducting and metallic single-wall carbon nanotube
24 e show that it renders the metallic 1T phase semiconducting, and gives it strong and tunable photolum
25 is of metallic, ferroelectric, upconversion, semiconducting, and thermoelectric 1D nanocrystals, amon
27 tronic properties of MOFs from insulating to semiconducting, as well as provide a blueprint for the d
28 All contain AuH2(-) molecular units and are semiconducting at P = 1 atm, and some form metallic and
30 ngle crystal transport measurements indicate semiconducting behavior for the anionic radical Ni compl
32 ction and has useful properties that include semiconducting behavior, catalytic reactivity, and aqueo
36 2 to a mixture of superconducting Bi2212 and semiconducting Bi2Sr2CuO6+delta (Bi2201) during the shoc
39 e prepared, from solution, on top of aligned semiconducting C60 single crystals, using an orthogonal
41 esistance end-bonded contacts, a high-purity semiconducting carbon nanotube source, and self-assembly
43 The combination of the short channel and semiconducting carbon nanotubes (CNT) allows for an exce
48 valence and conduction band energy levels of semiconducting carbon nanotubes; (ii) provide a direct m
49 Controlling the charge transfer between a semiconducting catalyst carrier and the supported transi
50 odetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD).
51 etallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resis
53 erve a 25% reduction in the transport gap of semiconducting CNTs, and a 32% reduction in the band gap
54 This work is relevant to the integration of semiconducting, conducting, and insulating nanomaterials
55 nt functional shell, Tube(wedge)2 allows the semiconducting conduction pathway to be modulated solely
57 ectivity from atomically thin conducting and semiconducting crystals enables us to exploit these hete
58 ased on a deeply depleted graphene-insulator-semiconducting (D(2)GIS) junction, which offers the poss
60 selective transformation of the cylindrical semiconducting domain into discrete spheres while keepin
65 s a material with combined ferroelectric and semiconducting features could be a promising solution fo
67 rons and holes, a possibility if MAPbI3 is a semiconducting ferroelectric, which, however, requires c
68 Applying uniaxial tensile strains to the semiconducting few-layer 2H-MoS2 crystals in the nanocom
72 al, however, it is necessary to separate the semiconducting from the metallic SWNTs present in the as
73 al structure, and document a decrease of the semiconducting gap that is directly linked to its nonpla
74 attention; however, due to the absence of a semiconducting gap, the realization of graphene-based de
76 trate, we produce large area two-dimensional semiconducting GaS of unit cell thickness ( approximatel
78 ithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm ne
79 ay for potential applications in spintronics.Semiconducting graphene nanoribbon provides a platform f
81 s to be an ordered composite of uniform-size semiconducting graphene quantum dots laterally integrate
84 nd alignment of vertically stacked WS2 /MoS2 semiconducting heterobilayers and finite density of stat
85 lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimen
86 nsively to control the lifetime of atoms and semiconducting heterostructures coupled to microwave or
89 n transistor comprises a small conducting or semiconducting island separated from two metallic reserv
94 perconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit coupling
95 en photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are no
96 is argued that in the observed high-pressure semiconducting Li phase (oC40, Aba2), an example of such
98 a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications.
100 ine the best features of metals or inorganic semiconducting materials (excellent electrical and optic
101 s based on a wide range of different organic semiconducting materials and incorporating reduced POM/A
102 The optical and electronic properties of semiconducting materials are of great importance to a va
104 rid) perovskites have emerged as competitive semiconducting materials for photovoltaic devices due to
106 ely modulate the charge carrier transport in semiconducting materials is extremely challenging for th
109 e three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mo
110 stors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging fr
111 ore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for f
112 onal conducting nanowires in two-dimensional semiconducting materials with nanometre precision is pos
115 ion demonstrate their promising potential as semiconducting materials, exhibiting high current on/off
116 enide takes advantage of the high quality of semiconducting materials, reliability in fabricating arr
117 particularly problematic for lone-pair-rich, semiconducting materials, such as phase-change materials
124 around a decade ago, that combines arrays of semiconducting microwires with flexible polymeric membra
125 sulfurization process that directly converts semiconducting molten stibnite (Sb2S3) into pure (99.9%)
126 sis of heterostructures made of single-layer semiconducting molybdenum disulfide contacting conductiv
129 sulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully des
133 rolling the shape and crystallography of any semiconducting nanomaterial is a key step towards extend
135 from a broad spectrum of materials spanning semiconducting nanomaterials to organic molecular dyes,
136 nt experiments and calculations suggest that semiconducting nanoparticles could act as efficient volt
137 m-confined Stark effect in membrane-embedded semiconducting nanoparticles, examines their possible ut
138 ion from the dye into the conduction band of semiconducting nanoparticles, such as titanium dioxide a
139 ssfully overcome by using vertically aligned semiconducting nanorods as the 3D photosensing pixels.
140 approach for improving the photoactivity of semiconducting nanostructures for a wide range of reacti
141 Well-ordered and highly interconnected 3D semiconducting nanostructures of bismuth sulphide were p
142 es and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-de
144 sers rely on solid gain materials (inorganic semiconducting nanowire or organic dye in a solid matrix
146 ducting transition metal dichalcogenides; 1D semiconducting nanowires; and energy-transfer in assembl
147 cal factor, we have designed a series of new semiconducting naphthalene diimide (NDI)-selenophene/per
148 asurements on nanowire ensembles confirm the semiconducting nature of AgFeS2, with a direct band gap
149 infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable band gaps, r
151 a temperature dependence consistent with the semiconducting nature of the TI film and freeze-out of b
153 tion is stable and preserves the monolayer's semiconducting nature, along with other attractive chara
156 nic/molecular conductivity in conducting and semiconducting organic polymers and small molecules, the
157 to produce uniform and intimately contacted semiconducting organic-inorganic nanocomposites for pote
158 surface ozone monitoring using gas-sensitive semiconducting oxide (GSS) technology, solar power, and
160 oach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-a
162 of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well
163 to surface passivation will allow the use of semiconducting oxides in a variety of different electron
164 allic MoS2 showing high responsivity and the semiconducting phase exhibiting high on/off ratios.
165 norganic hybrid perovskites with metallic or semiconducting phases of 2D MoS2 nanosheets via solution
166 rs on a variety of technologically important semiconducting photoanodes, including textured crystalli
168 l of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained,
171 ation and mechanochemical unzipping to yield semiconducting polyacetylene-based block copolymers.
172 We herein report an all-in-one fluorescent semiconducting polymer based far-red to near-infrared (N
176 we show the concept of using photoswitchable semiconducting polymer dots (Pdots) as an optical 'paint
179 he design and synthesis of quinoxaline-based semiconducting polymer dots (Pdots) that exhibit near-in
180 he design and development of squaraine-based semiconducting polymer dots (Pdots) that show large Stok
181 we report a probe of lanthanide-coordinated semiconducting polymer dots (Pdots), which possess fluor
182 s (hydrogels), hydrophobic organic polymers, semiconducting polymer dots, quantum dots, carbon dots,
183 thiophene)} [P(NDI2OD-T2)], a widely studied semiconducting polymer exhibiting high electron mobility
184 ate; and (iv) demonstrate that modulation of semiconducting polymer frontier orbital energy levels ca
186 delivery of two nanocarriers, a fluorescent semiconducting polymer model drug nanoparticle as well a
191 cles (NPs) (including dye-doped polymer NPs, semiconducting polymer NPs, small-molecule organic NPs,
192 nravel molecular order in thin layers of the semiconducting polymer poly[N,N'-bis(2-octyldodecyl)-1,4
194 ment encoded in the spectral response of the semiconducting polymer, and correlate chain packing with
195 uction of absorption and emission in p3ht, a semiconducting polymer, and found that the rate of photo
202 otential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and
204 , further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broade
207 behaviors are also observed in other common semiconducting polymers such as poly(3-hexyl thiophene)
208 because high mobility has been reported for semiconducting polymers that exhibit a surprisingly low
209 e effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, su
210 we present a design concept for stretchable semiconducting polymers, which involves introducing chem
211 severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower th
212 bility control is a patterning technique for semiconducting polymers, which utilizes the reduction in
218 lectrification, electrostatic induction, and semiconducting properties for area-scalable conversion o
219 technologically useful manner.Integration of semiconducting properties into the basic topological mot
221 agrams may be used for imposition of desired semiconducting properties that are needed to maximize th
222 n opportunity to integrate ferromagnetic and semiconducting properties through the Rasbha effect for
224 lms of the macrocycle show that they exhibit semiconducting properties with a redox-conductivity of u
226 talline morphology formation for spin-coated semiconducting PTB7 (poly[[4,8-bis[(2-ethylhexyl)oxy]ben
227 in texture in monolayer, centrosymmetric and semiconducting PtSe2 film without the characteristic spi
228 ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need
229 mbled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was
232 ging light-harvesting nanomaterials, such as semiconducting quantum dots (QDs), metal nanoparticles,
233 hyperbolic metasurfaces, wherein distributed semiconducting quantum wells display extreme absorption
236 (thus well-stabilized), small-diameter, and semiconducting-rich CNTs have higher-measured excited tr
239 a wire-like material that can also integrate semiconducting sequences into the framework of DNA mater
240 straightforward method by which to integrate semiconducting sequences, site-specifically, into the fr
242 ns into an electric signal) based on organic semiconducting single crystals that possess enhanced sen
243 was developed and used to uniformly deposit semiconducting single-wall carbon nanotube (SWCNT)-based
244 and ridge waveguides based on large-diameter semiconducting single-wall carbon nanotubes (s-SWCNTs) d
245 that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type
246 larly tunable fluorescent quantum defects in semiconducting single-walled carbon nanotube hosts throu
248 in the molarity of any structurally enriched semiconducting single-walled carbon nanotube preparation
251 Chirality-selective functionalization of semiconducting single-walled carbon nanotubes (SWCNTs) h
254 e show that optical excitation of individual semiconducting single-walled carbon nanotubes triggers s
257 ty organic single crystals, based on various semiconducting small molecules on virtually any substrat
258 y and at low temperature, from rhombohedral, semiconducting SrCrO(2.8) to cubic, metallic perovskite
259 g conversion to the thermodynamically stable semiconducting state (2H) when mildly annealed in a nitr
261 netic field of 9 T) discovered in degenerate semiconducting strontium titanite (SrTiO3) single crysta
262 ngs demonstrate that decoupling magnetic and semiconducting sublattices allows access to high-Tc n- a
266 r, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demons
267 that the method can detect both metallic and semiconducting SWNTs in lysates of cells that had intern
270 us polymers are able to selectively disperse semiconducting SWNTs, the subsequent removal of the poly
273 graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and als
275 f poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupli
278 n switch continuously from a low-conductance semiconducting to a high-conductance metallic state.
279 sistivity studies reveal a transition from a semiconducting to a metallic phase with decreasing tempe
281 able direct photo-conversion from conducting/semiconducting to insulating state through molecular dis
282 remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) m
285 gh-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highl
286 rt in nanoscale optical characterization: 2D semiconducting transition metal dichalcogenides; 1D semi
287 the majority of related research focuses on semiconducting transition-metal dichalcogenides (for exa
289 espect, two-dimensional gapless graphene and semiconducting transition-metal dichalcogenides have eme
290 titution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayer
291 erties, yet its lack of optical activity and semiconducting transport hamper application in optoelect
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