ライフサイエンスコーパス: semiconductor

1 e following electrochemical oxidation of the semiconductor.

2 on through infiltration with a complementary semiconductor.

3 reasing the gap, as expected for an ordinary semiconductor.

4 lacement of a domain wall in a ferromagnetic semiconductor.

5 ce of quantum emitters in an atomically thin semiconductor.

6 , similar to the temperature dependence of a semiconductor.

7 ee interfaces between the superconductor and semiconductor.

8 expansion mismatch between the substrate and semiconductor.

9 rials such as multiferroics and conventional semiconductors.

10 gimes), a phenomenon distinct from inorganic semiconductors.

11 ying triplet states is a hallmark of organic semiconductors.

12 achieved considerable success in metals and semiconductors.

13 h for tuning of the electronic properties of semiconductors.

14 ems in conventional, low-spin-orbit-coupling semiconductors.

15 cable as functional chromophores and organic semiconductors.

16 underpins many of the advantages of organic semiconductors.

17 o the charge transport mechanisms in organic semiconductors.

18 xyl)amide (NBA) building block for polymeric semiconductors.

19 dge, indicating that they are direct bandgap semiconductors.

20 en achieved in conventional diluted magnetic semiconductors.

21 Similar results apply to other IV-VI semiconductors.

22 l the energy levels of cation sublattices in semiconductors.

23 cing advanced water-splitting catalysts with semiconductors.

24 tate for electron injection into appropriate semiconductors.

25 omophore-catalyst assemblies on wide bandgap semiconductors.

26 n inferior performance compared to inorganic semiconductors.

27 icular the unique characteristics of organic semiconductors.

28 ich conditions, behave as degenerately doped semiconductors.

29 he values achieved in conventional inorganic semiconductors.

30 over the low loss plasma frequency in III-V semiconductors.

31 ce principles are transferrable to arbitrary semiconductor absorbers, D(2)GIS devices offer a high-pe

32 lows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequenci

33 The application of strain to semiconductors allows for controlled modification of the

34 A high-performance conjugated semiconductor (an indacenodithiophene-benzothiadiazole c

35 rocrystals, the most-promising van der Waals semiconductor and dielectric.

36 anomaterials such as metal, metal oxide, and semiconductor and magnetic nanoparticles, aiming to take

37 ransport and catalysis between the colloidal semiconductor and molecular components, the activity of

38 ch enhances charge-carrier generation in the semiconductor and suppresses bulk recombination, is resp

39 the molecular design of SERS-active organic semiconductors and easily fabricable SERS platforms for

40 alleytronic devices based on atomically thin semiconductors and heterostructures.

41 d carrier injection and transport in organic semiconductors and insight is provided for the realizati

42 properties of the whole family of molecular semiconductors and is also used to demonstrate why commo

43 tic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength

44 in which solute particles (including metals, semiconductors and magnetic materials) form stable collo

45 nductivity is typically found in crystalline semiconductors and metals.

46 -doping of films of donor conjugated organic semiconductors and their blends with acceptors over a li

47 trolling the diffusion of dopants in organic semiconductors and their stability has proven challengin

48 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive

49 n, and density of dopants within the organic semiconductor, and, in turn, affect the electronic prope

50 highly tunable and steady-state mid-infrared semiconductor antennas.Achieving large tunability of sub

51 Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO

52 A metal-insulator-semiconductor architecture, in which an insulator film s

53 tion complexity of complementary metal-oxide-semiconductor architectures impedes the achievement of t

54 spin transport in single-crystalline organic semiconductors are discussed.

55 Current studies of electron dynamics in semiconductors are generally limited by the spatial reso

56 Organic semiconductors are key materials for the next generation

57 d conformational lock strategies for organic semiconductors are limited to S...X (X = O, N, halide) w

58 ne (SBT)-based small molecular and polymeric semiconductors are synthesized by end-capping or copolym

59 Heterogeneous semiconductors are underexploited as photoredox catalyst

60 trol of the dopant metallic nanoparticles or semiconductors, are believed to be broadly applicable to

61 Effective implementation of organic semiconductors as a photoactive layer would open up a mu

62 be present as an impurity in amorphous oxide semiconductors at the 0.1% level.

63 Solution-processed hybrid perovskite semiconductors attract a great deal of attention, but li

64 Recently a new diluted magnetic semiconductor, (Ba,K)(Zn,Mn)2As2 (BZA), with high Curie

65 Thus, several schemes for inducing a semiconductor band gap in graphene have been explored.

66 transport behavior is due to a conventional semiconductor band gap.

67 orming internal electric fields, bending the semiconductor bands, and finally impeding further charge

68 y the electrical requirements for an organic-semiconductor-based logic chip.

69 evelopment of highly sensitive and selective semiconductor-based metal oxide sensor devices to detect

70 toelectrochemical characterization of n-type semiconductor-based photoanodes for water splitting.

71 Semiconductor-based photocatalysis attracts wide attenti

72 etic properties typical for diluted magnetic semiconductors because the spins of dangling bonds at th

73 Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipo

74 dimensional CdSe species show characteristic semiconductor behavior, and can be used in photodetector

75 to photovoltaic or display-destined organic semiconductors but also to explaining the quintessential

76 m-doped cadmium oxide, graphene and diffused semiconductors, but also for 'opaque' electrodes, tin-do

77 ism is not normally relevant in conventional semiconductors, but is possible in WS2 due to the narrow

78 bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters.

79 monolithically fabricated on light-emitting semiconductors by solely relying on physical properties

80 onic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific

81 In particular, nanostructuring of semiconductors can lead to strong suppression of heat tr

82 Our data show that polymer semiconductors can simultaneously exhibit field-effect a

83 The International Technology Roadmap for Semiconductors challenges the device research community

84 A gigahertz single-electron (SE) pump with a semiconductor charge island is promising for a future qu

85 anopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the p

86 ocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated.

87 nce reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on

88 ar electrodes with complementary metal-oxide-semiconductor (CMOS) integrated circuits to realize a hi

89 that integrates a complementary metal-oxide-semiconductor (CMOS) optical detection system for a rapi

90 icon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line

91 Photoactive perovskite semiconductors combine effective light absorption, allow

92 es a practical and complementary metal oxide semiconductor compatible method to improve the performan

93 cal reactions between NO2 and the dielectric/semiconductor components.

94 ZnSnxGe1-xN2 alloys are chemically miscible semiconductor compounds with potential application as ea

95 The existence of mobile ions in the oxide semiconductors could be somewhat regarded to be similar

96 ) are promising materials for n-type organic semiconductors; despite their potential, synthetic route

97 ry promising candidates for X- and gamma-ray semiconductor detectors.

98 Band edge positions of semiconductors determine their functionality in many opt

99 ow to create macroscopic quantum states in a semiconductor device: a chain of InAs quantum dots embed

100 cally considered to be negligible in organic semiconductor devices due to Coulomb repulsion between t

101 conducting hard gap in hybrid superconductor-semiconductor devices has been found to be necessary to

102 heterostructure-a fundamental phenomenon in semiconductor devices such as solar cells.

103 Interfaces play a crucial role in semiconductor devices, but in many device architectures

104 ce the late twentieth century has centred on semiconductor devices, such as transistors, diodes and s

105 o future solar cells, 2D materials and other semiconductor devices.

106 cations of other thin film photovoltaics and semiconductor devices.

107 (Ga) is a rare element, it is widely used in semiconductor devices.

108 ades, limiting the performance of CdTe-based semiconductor devices.

109 l materials promise to do for photonics what semiconductors did for electronics, but the challenge ha

110 sfer states, naturally aligned at an organic semiconductor donor-acceptor (DA) interface, as a means

111 nd, and the electrostatic barrier within the semiconductor, due to its space-charge region, on the ot

112 onstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal

113 e the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing ch

114 anosheets were found to be indirect band gap semiconductors (Eg = 1.55 eV), and single nanosheet phot

115 ucture for traditional crystalline inorganic semiconductor epifilms that does not require high temper

116 mically thin transition metal dichalcogenide semiconductors, excitons are particularly important even

117 ated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that ar

118 t of the subthreshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV

119 nces, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates

120 h-performance electro-optic devices in III-V semiconductor field.

121 This technique enables any type of semiconductor film to be copied from underlying substrat

122 ng throughout high-tech industries including semiconductor, flat panel display, and solar photovoltai

123 ese materials could be candidates as organic semiconductors for applications in OFETs and as nonfulle

124 pin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using variou

125 ity by coating the anode with chiral organic semiconductors from helically aggregated dyes as sensiti

126 Charge carrier dynamics in amorphous semiconductors has been a topic of intense research that

127 al dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor

128 Doping of bulk semiconductors has revealed widespread success in optoel

129 III-nitride semiconductors have a unique ability to stabilize ultra-

130 pi-Conjugated organic semiconductors have been explored in several optoelectro

131 Now that advanced organic and polymer semiconductors have shown high conductivity approaching

132 Nanostructured metal oxide semiconductors have shown outstanding performances in ph

133 in binding energy between a series of metal-semiconductor heterostructures based on layered V2 -VI3

134 n semiconductors has opened new frontiers in semiconductor heterostructures either by stacking differ

135 in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of

136 In conventional semiconductor heterostructures, the design of multijunct

137 dy stress distribution in lattice-mismatched semiconductor heterostructures.

138 As a key process in semiconductor high volume manufacturing (HVM), high reso

139 Organic semiconductors hold great promise for SHC in an economic

140 On the other hand, metal-semiconductor hybrid nanostructures are found to be very

141 The new TAPP derivatives were processed as semiconductors in organic thin-film transistors (TFTs) t

142 from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor c

143 Compatible with semiconductor industry standard complementary metal-oxid

144 e material on a substrate-is crucial for the semiconductor industry, but is often limited by the need

145 Rapid advances in the semiconductor industry, driven largely by device scaling

146 ntroducing multi-functional materials in the semiconductor industry.

147 f in-line or even in situ process control in semiconductor industry.

148 attering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an ins

149 ects in the potential well that forms at the semiconductor/insulator interface and induces charges of

150 abricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal bor

151 rticle-structured MoS2 nanosheet as an ideal semiconductor interface, which is able to form a homogen

152 Inserting molecular monolayers within metal/semiconductor interfaces provides one of the most powerf

153 r transport across metal/molecular monolayer/semiconductor interfaces.

154 e reactions, integrates two distinct sulfide semiconductors into hierarchical tubular hybrids with ho

155 rganic field-effect transistor whose organic semiconductor is poly(2,5-bis(3-tetradecylthiophen-2-yl)

156 Electronic impurity doping of bulk semiconductors is an essential component of semiconducto

157 nthesizing high-quality two-dimensional (2D) semiconductors is essential for their practical applicat

158 Stable electrical doping of organic semiconductors is fundamental for the functionality of h

159 When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a p

160 A Schottky catalyst based on metal-semiconductor junction principles is presented.

161 rge-scale controlled fabrication of 2D metal-semiconductor junctions for next-generation electronic a

162 od can be extended to create patterned metal-semiconductor junctions in MoTe2 in a two-step lithograp

163 ' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferomete

164 online-measurement of gaseous N2O, employing semiconductor lasers at 2.9 and 4.5 mum, were developed

165 e realization of electrically driven deep UV semiconductor lasers to date.

166 Three semiconductor lasers were selected as the excitation sou

167 cation and characterization of deep UV MgZnO semiconductor lasers.

168 eometry was realized by growing a narrow gap semiconductor layer (CdSe) on the surface of a wide-gap

169 tron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-

170 ht absorption for integration on surfaces of semiconductor light absorbers.

171 GeSe is a IV-VI semiconductor, like the excellent thermoelectric materia

172 industry standard complementary metal-oxide semiconductor logic circuit fabrication processes, this

173 t the metallization of the hybrid perovskite semiconductor (MA)PbI3 (MA = CH3NH3(+)) with no apparent

174 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to re

175 ieve material and process compatibility with semiconductor manufacturing.Kerr frequency comb generati

176 amics of both holes and electrons in complex semiconductor materials and across junctions.

177 iven interfacial electric structure of III-V semiconductor materials and paves the way to future high

178 is the internal motion of electrons through semiconductor materials due to applied electric fields o

179 f the interrogated sample, local analysis of semiconductor materials for light-induced water splittin

180 The combination of graphene with semiconductor materials in heterostructure photodetector

181 Growing III-V semiconductor materials on Si substrates for opto-electr

182 e to the complex crystallization kinetics of semiconductor materials within dynamic flow of inks.

183 we prepared a minimal DQD in a wide band-gap semiconductor matrix.

184 A flexible and miniaturized metal semiconductor metal (MSM) biomolecular photodetector was

185 ron-donors could be a method of inducing the semiconductor-metal 2H-1T TMD phase transition.

186 ing quantum dots (QDs), metal nanoparticles, semiconductor-metal heterostructures, pi-conjugated semi

187 into another allotrope and accompanied by a semiconductor-metal transition.

188 Exciton-polaritons in semiconductor microcavities form a highly nonlinear plat

189 xciton-polariton condensate which emerges in semiconductor microcavity subject to disorder, which det

190 ycle were accomplished via photochemistry on semiconductor minerals, the synthesis of clays was demon

191 er (CT) effect in weakly interacting organic semiconductor mixtures.

192 As such, they bridge traditional semiconductors, molecular solids, and nanocrystal arrays

193 ctronic nose (e-nose), having 18 metal oxide semiconductor (MOS) sensors, guided determination of fry

194 py that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands.

195 anode and the common small molecule organic semiconductor N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenz

196 ndamental physics and chemistry of colloidal semiconductor nanocrystal quantum dots (QDs) have been c

197 The use of semiconductor nanocrystal quantum dots (QDs) in optoelec

198 spective, we examine energy transfer between semiconductor nanocrystals (NCs) and pi-conjugated molec

199 Colloidal semiconductor nanocrystals have emerged as promising act

200 pts developed are likely to be applicable to semiconductor nanocrystals interfaced with molecular chr

201 to switch between plasmonic and fluorescent semiconductor nanocrystals might lead to their successfu

202 introducing dopants inside the size-confined semiconductor nanocrystals, the controlled dopant-host l

203 strating control of electronic impurities in semiconductor nanocrystals.

204 tion and transfer of triplet excitons across semiconductor nanomaterial-molecular interfaces will pla

205 ductor-metal heterostructures, pi-conjugated semiconductor nanoparticles, organic-inorganic heterostr

206 uble heterojunctions designed into colloidal semiconductor nanorods allow both efficient photocurrent

207 Electronic doping of colloidal semiconductor nanostructures holds promise for future de

208 Subwavelength, high-refractive index semiconductor nanostructures support optical resonances

209 Here we propose the use of semiconductor nanostructures to create a type-II heteroj

210 eported for photodetectors made of bottom-up semiconductor nanostructures.

211 c field and Rashba spin-orbit interaction in semiconductor nanostructures.

212 Semiconductor nanowires are ideal for realizing various

213 demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful mat

214 ctroscopy (TRARPES) study of WSe2, a layered semiconductor of interest for valley electronics.

215 Tin and lead iodide perovskite semiconductors of the composition AMX3, where M is a met

216 tric Ga2FeO4 NCs are intrinsic small bandgap semiconductors, off-stoichiometric GFO NCs, produced und

217 ness excitonic properties in low-dimensional semiconductors offering new strategies for quantum optoe

218 s in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a s

219 a layer of bulk-heterojunction (BHJ) organic semiconductors on top of perovskite to further extend it

220 By incorporating multiple semiconductor optical amplifiers in the microring resona

221 m hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical

222 e polymerizations, are pi-conjugated organic semiconductors, or which provide the possibility to intr

223 ffers fundamentally from that in crystalline semiconductors owing to the lack of long-range order and

224 For proof-of-concept, we propose an oxide-semiconductor-oxide-insulator stack and discuss the usef

225 The patterned materials can be metals, semiconductors, oxides, magnetic, or rare earth composit

226 the electronic structure of these and other semiconductor particles in a manner suitable to applicat

227 Semiconductor photocatalysis attracts widespread interes

228 ectrochemical water splitting (PEC-WS) using semiconductor photoelectrodes represents a promising app

229 idic electrolytes without degradation of the semiconductor photoelectrodes.

230 Direct band-gap semiconductors play the central role in optoelectronics.

231 erance of two poly(thiophene)s-based organic semiconductors: poly(3-hexylthiophene-2,5-diyl), P3HT, a

232 ing systems based on dye-doped pi-conjugated semiconductor polymer nanoparticles and self-assembled s

233 ities, in a platform adapted from industrial semiconductor processing.

234 The metal-shrouded 2D semiconductor promises interesting applications in 2D el

235 We exploit the fact that conductivity in semiconductors provides a modulation index several order

236 lagged behind those of, for instance, II-VI semiconductor QDs.

237 c nanocrystals (NCs) and, more specifically, semiconductor quantum dots (QDs) have emerged as crucial

238 Colloidal semiconductor quantum dots are attractive materials for

239 tation comprise a very attractive feature of semiconductor quantum dots for optoelectronics applicati

240 d to commercially available organic dyes and semiconductor quantum dots, the CD aggregates provided a

241 imilar persistent currents occur in metal or semiconductor rings, when the phase coherence of the ele

242 semiconductors is an essential component of semiconductor science and technology.

243 The first metal-shrouded two-dimensional semiconductor, single-layer Tl2O, is discussed from firs

244 Scalable semiconductor sources typically rely on nonlinear optica

245 rrent generation from electron-hole pairs in semiconductor structures or on bolometry for wavelengths

246 free carriers in the conduction band of the semiconductor substrate.

247 Solution-processed semiconductors such as conjugated polymers have great po

248 hey suggested that BICs could be observed in semiconductor superlattices.

249 that anchoring the molecular catalyst on the semiconductor surface is key in controlling the selectiv

250 on the poly-3-hexylthiophene (P3HT) organic semiconductor surface through direct physical adsorption

251 ully integrated in complementary metal-oxide-semiconductor technology.Optical non-reciprocity achieve

252 for molecular materials such as the organic semiconductor tetracene is shown, without relying on add

253 aphitic carbon nitride (g-C3N4), a polymeric semiconductor that finds potential applications in multi

254 Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto

255 ments thereby greatly expanding the range of semiconductors that can be utilized in APS.

256 e pairs, are elementary photo-excitations in semiconductors that can couple to light through radiativ

257 elevant within the context of designing soft semiconductors that exhibit high solubility and a tenden

258 erlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a vi

259 Here we use a range of organic semiconductors that undergo singlet exciton fission to r

260 while the twisted 3,7-NDA-based P1 is a poor semiconductor, the planar 2,6-functionalized NBA polymer

261 Given the important role of GNRs as semiconductors, the mass spectrometric analysis provides

262 ding electrical properties of single crystal semiconductors, there is great interest in releasing sin

263 line, liquid-crystalline, and glassy organic semiconductor thin films down to the sub-100 nm film thi

264 iles in lightly and moderately doped organic semiconductor thin films is presented.

265 e introduction of nanopores into the organic semiconductor thin films via a simple and robust templat

266 For two-dimensional (2D) semiconductors, this is not feasible as they typically d

267 ctive sources utilize short-carrier-lifetime semiconductors to recombine carriers that cannot contrib

268 calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2

269 proach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect tr

270 itiating etching by injecting holes into the semiconductor valence band.

271 performance of functional materials, such as semiconductors, via careful manipulation of defects has

272 A 3D array of organic semiconductors was assembled using a DNA scaffold.

273 es to create a type-II heterojunction at the semiconductor-water interface in a photoelectrochemical

274 Unlike in optical fibres and semiconductor waveguides, we observe that the microcavit

275 vely similar to those reported previously in semiconductors which have five orders of magnitude fewer

276 d chromate and its coprecipitates are p-type semiconductors, which explains the observed reduction re

277 er upon doping of highly crystalline organic semiconductors, which significantly reduces the charge c

278 ically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond th

279 ngsten disulfides (WS2) is a direct band gap semiconductor with a gap of 2.1 eV featuring strong phot

280 Combination of an oxide semiconductor with a highly conductive nanocarbon framew

281 1.7Se2.7Cl0.3 behaves like a charge-balanced semiconductor with a narrow band gap.

282 iscernible by modelling the transport like a semiconductor with a transport edge and a transport para

283 ed on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap.

284 Doped semiconductor with antireflection layer is general strat

285 By exciting the host semiconductor with light that resonates with its electro

286 y rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic pro

287 iamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands.

288 xponential decays typical of nanocrystalline semiconductors with a distribution of trap sites, to a m

289 Here we investigate high harmonics from semiconductors with controllable induced photo-carrier d

290 e chalcogenides are a new class of versatile semiconductors with high absorption coefficient and lumi

291 materials that are moderate- to wide-bandgap semiconductors with incipient ionic conductivity and a h

292 ansition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leadin

293 g coupling of monolayer metal dichalcogenide semiconductors with light offers encouraging prospects f

294 ength in a series of high-mobility molecular semiconductors with strong potential for future devices.

295 structure ranges from trivial insulators, to semiconductors with tunable gaps, to semi-metallic, depe

296 y in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

297 Magnetic oxide semiconductors with wide band gaps have promising spintr

298 that the ACI perovskites are direct bandgap semiconductors with wide valence and conduction bandwidt

299 een stable 1D metal and an antiferromagnetic semiconductor, with the phase boundary effectively formi

300 ectronic transport that is unique to organic semiconductors yet poorly understood.