ライフサイエンスコーパス: sic

1 several deep centers in 4H silicon carbide (SiC).

2 ip3) called the synapsis initiation complex (SIC).

3 gents by specific inhalation challenge test (SIC).

4 as a positive specific inhalation challenge (SIC).

5 n a process called sugar-induced cell death (SICD).

6 sual beta --> alpha phase transformations in SiC.

7 deposited MoS2 layer onto epitaxial graphene/SiC.

8 Ci/Gli activity in the nucleus depending on SIC.

9 their institution has discussed or plans an SIC.

10 were assessed at baseline and 24 hours after SIC.

11 4.2 [1.1-16.8]) in subjects with a positive SIC.

12 polytypes of the simplest 1:1 stoichiometry, SiC.

13 in graphene that is epitaxially grown on 4H-SiC.

14 ep mantle isotopic signature, and associated SiC.

15 opose that this is the principal function of SIC.

16 ctivities of lysozyme were also inhibited by SIC.

17 al activity of this protein was inhibited by SIC.

18 esign and to develop quantum applications in SiC.

19 Lysozyme is precipitated from solution by SIC.

20 in dynamic radiation defect processes in 3C-SiC.

21 , and may be a causative microbial signal in SIC.

22 nihilated at small-angle tilt GBs (STGBs) in SiC.

23 ght and dark charged divacancy defects in 4H-SiC.

24 .01, 6.02, and 11 than those with a negative SIC.

25 eared at 1.1 eV below the conduction band of SiC.

26 phosphate or succinate, protects cells from SICD.

27 in in the vesicular membrane, coincided with SICs.

28 ate the subset of COs that normally occur at SICs.

29 ay be more beneficial than undergoing manual SICS.

30 lux growth method for the targeted growth of SICs.

31 ive endophthalmitis in patients undergoing M-SICS.

32 o graphene grown by thermal decomposition on SiC (000-1).

33 study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectros

34 h to producing epitaxial twisted graphene on SiC (0001) and the observation of its intrinsic bandgap

35 on of self-assembled Au nanostructures on 4H-SiC (0001) by the systematic variation of annealing temp

36 fter nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness c

37 ercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition.

38 isted hydrogen etching of epitaxial graphene/SiC(0001) in ultrahigh vacuum.

39 chemically activating epitaxial graphene on SiC(0001) using atomic oxygen.

40 Graphene grown on SiC(0001) via the decomposition of the surface has a sin

41 ence patterns in epitaxial graphene grown on SiC(0001).

42 This mutant, sic-3, and the existing sic-1 mutant both exhibit low-amplitude or arrhythmic ex

43 In a genetic screen for enhancers of sic-1, we isolated a loss-of-function Arabidopsis mutant

44 Specialised dental metrics (i.e. SIC, SIC(10) and SCIM(10)) permit the exploration of other im

45 tional tests used were plots of SIC deciles (SIC(10)) and a Scottish Caries Inequality Metric (SCIM(1

46 metallocene(II) sources Cp'(2)Ti(eta(2)-Me(3)SiC(2)SiMe(3)) (Cp' = eta(5)-cyclopentadienyl, 1a or eta

47 cluding such exotic species as C(8)H, C(3)S, SiC(3), and AlNC.

48 LHY and CCA1 splice variants are needed for sic-3 circadian clock phenotypes.

49 This mutant, sic-3, and the existing sic-1 mutant both exhibit low-am

50 cca1-1 lhy-20 double mutant is epistatic to sic-3, indicating the LHY and CCA1 splice variants are n

51 ral defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently c

52 HPh) (R' = Me(3)Si, Me(3)SiCH(2), and p-Me(3)SiC(6)H(4)) with the same optical purity at the alpha ca

53 ority of the 40 777 private surgeries (21% M-SICS; 79% phacoemulsification).

54 hundred and seventy-eight subjects underwent SIC; 98 had a positive test.

55 ar, we focused on the (100) surface of cubic SiC, a leading semiconductor candidate for biocompatible

56 the streptolysin O (SLO) cytolysin, but not SIC, a protein that protects S. pyogenes from CAPs.

57 tureless, small incision cataract surgery (M-SICS) accounted for approximately all of the 75 937 cata

58 we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect s

59 sic allele analysis of emm1 strains demonstrated additio

60 ective defect diffusion length is 10 nm for SiC and 20 nm for Si, and it decreases with increasing

61 nce-inhibitory activity equivalent to mature Sic and inhibited binding of Sic to ezrin.

62 omparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the simil

63 s an institutional strength, only 23% had an SIC and most rely on other mechanisms of oversight.

64 that SOC had a significant relationship with SIC and pedogenic carbonate (PIC); converting shrub land

65 together with results of previous studies of SiC and Si, are analyzed with a model of radiation damag

66 o the main synthetic strategies for modified SiC and SiCN ceramics, an overview of the morphologies,

67 ntified N-terminal site (SIN), and that both SIC and SIN are required for optimal inhibition of Ci/Gl

68 We also find that binding of Sufu to SIC and the middle region of Ci can impede recruitment o

69 We analyzed two datasets of SOC and SIC and their (13)C compositions , one with over 100 soi

70 It is also shown how the combination of SICS and FCS can be used to determine the fraction of fl

71 dophthalmitis rate by 3.5-fold (3-fold for M-SICS and nearly 6-fold for phacoemulsification).

72 at IC antibiotics should be considered for M-SICS and phacoemulsification.

73 nsed observations of sea ice concentrations (SIC) and sea surface temperatures (SST) during the chick

74 on of streptococcal inhibitor of complement (Sic) and streptococcal pyrogenic exotoxin B (SpeB).

75 ; 23% reported that their institution has an SIC, and 20% said their institution has discussed or pla

76 eparately for both phacoemulsification and M-SICS, and for the eyes complicated by PCR.

77 ng correlates with an increased frequency of SICs, and, when paired neurons were within 100 microm of

78 Chairs; the existence and characteristics of SICs; and alternative means of oversight of surgical inn

79 Since SICs are assembled in advance of SC and they are properl

80 ions under their selected-ion chromatograms (SIC) are used for relative quantification of modified pe

81 Salt-inclusion compounds (SICs) are known for their structural diversity and their

82 rigin of defect-induced ferromagnetism using SiC as a prototypical example.

83 dds Ratios and the Significant Caries Index (SIC) as advocated by the World Health Organization were

84 valuated by self-interaction chromatography (SIC) as an innovative approach to characterize physical

85 s, manual small-incision cataract surgery (M-SICS), as well as in patients with posterior capsular ru

86 ng force to initiate amorphization in the nc-SiC at higher doses.

87 free path spectra of GaAs, GaN, AlN, and 4H-SiC at temperatures near 80 K, 150 K, 300 K, and 400 K.

88 ering interference correlation spectroscopy (SICS), autocorrelates the signals from the forward-scatt

89 pure B4C (discharge time 2s, current 4A) and SiC:B4C 50 wt% (3s at 6A), which were fully consolidated

90 n or manual small-incision cataract surgery (SICS) based on the LOCS III grading score.

91 The results conveyed here can contribute to SiC-based device fabrication by providing a room-tempera

92 structural stability and fuel integrity for SiC-based materials operated in this regime.

93 A factor strongly limiting SiC-based technologies is the high-temperature synthesis

94 n to the plasma membrane, were identified as Sic-binding proteins by affinity chromatography and matr

95 es using (125)I-labeled proteins showed that SIC binds approximately two molecules of SLPI and four m

96 zyme-linked immunosorbent assays showed that SIC binds to SLPI and to both human and hen egg lysozyme

97 RIIb on LSEC, a major scavenger, keeps SIC blood concentrations low and minimizes pathologic de

98 uildup and defect interaction dynamics in 3C-SiC bombarded at 100 degrees C with either continuous or

99 anic phosphate and succinate protect against SICD but by different mechanisms.

100 energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effec

101 wth of vertically aligned graphene on C-face SiC by varying the processing conditions.

102 , and streptococcal inhibitor of complement (sic) by directly binding to a 45-bp binding site as dete

103 ation of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation.

104 tron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled.

105 onalize the surface and therefore impact how SiC can be used for biomedical applications.

106 ct spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlle

107 ed honeycomb substrates, such as graphene on SiC, can be used to simulate SU(4) symmetric spin-orbita

108 p-gated graphene transistors on a 0.24-cm(2) SiC chip, which is the largest density of graphene devic

109 r is the major site of small immune complex (SIC) clearance.

110 Results show that, for both Si and SiC, collision cascades are mass fractals with fractal d

111 cantly better than the wild-type strain, and Sic colocalized with ezrin in discrete regions of polymo

112 Sic colocalized with ezrin inside epithelial cells and b

113 rain to be severely deficient in eliminating SIC compared with the wild-type strain, terminal half-li

114 rofabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at

115 After 730 days, SiC composite had a strength (mean +/- SD; n = 6) of 185

116 An AlN/3C-SiC composite layer enables the third-order quasi-symmet

117 Compared with 1 day, the strength of the SiC composite showed no decrease, while that of the Si(3

118 yed for antibodies and MCP-1 stimulation had SIC-confirmed DA.

119 ne patient demonstrated a sequence change in sic consistent with longer infection duration.

120 -driven ASCT or standard immunochemotherapy (SIC) consolidation in age-adjusted international prognos

121 studies are needed to determine whether the SIC could be used to identify subclinical changes in pat

122 Our findings suggest that the SIC could serve as a noninvasive quantitative tool for a

123 structure, the signal intensity coefficient (SIC), could detect tissue-level alterations in HCM sarco

124 s influence of silicon and ramifications for SiC coupling catalysis.

125 n that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum.

126 d growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequesterin

127 graphene is grown on both polar faces of the SiC crystals.

128 Additional tests used were plots of SIC deciles (SIC(10)) and a Scottish Caries Inequality M

129 Nonetheless, because certain SiC defects have electronic states with sharp optical an

130 SIC did not inhibit the antiproteinase activity of SLPI,

131 rast, NMDA receptor antagonists, which block SICs, did not prevent the generation of either ictal- or

132 s study aims to improve our understanding of SIC dynamics and its role in carbon sequestration.

133 Sic enhances bacterial survival by enabling the pathogen

134 experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a bu

135 Soil carbonate (SIC) exceeds organic carbon (SOC) greatly in arid lands,

136 ement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resista

137 Silicon carbide (SiC) exhibits excellent material properties attractive f

138 For the 414 657 M-SICS eyes, the endophthalmitis rate was 0.07% (135/192 1

139 matched window function is used to generate SIC for more reliable quantification.

140 he form of small ( 5-10 nm) pockets of alpha-SiC forming in the beta matrix.

141 nd very low levels of IL-10 were produced by SIC from grafted mice after either ST or DST.

142 Tracking decay of SIC from the blood, we found the RIIb knockout strain to

143 d the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar si

144 d for possible OA in a tertiary center using SICs from 2006 to 2012.

145 Sequence analysis of the hypervariable sic gene documented that distinct emm1 subclones dissemi

146 To study this issue, the sic gene was sequenced in 100 isolates cultured from thr

147 omoter yielded a novel allele of the SICKLE (SIC) gene.

148 Two recent studies demonstrate that SICs generate neuronal paroxysmal depolarizations resemb

149 n stars, shows that the majority of presolar SiC grains come from low-mass asymptotic giant branch st

150 tic peptides corresponding to two regions of Sic had GAS adherence-inhibitory activity equivalent to

151 The elimination of defects from SiC has facilitated its move to the forefront of the opt

152 n serendipitously and the targeted growth of SICs has met with only moderate success.

153 SICS has two important features: First, for unlabeled NP

154 Silicon carbide (SiC) has unique chemical, physical, and mechanical prope

155 Previous studies of SIC have used a "dead column" packed with the same resin

156 Existing SICs have a median of 7 members; 57% reviewed 3 or fewer

157 Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for explorat

158 Defects in silicon carbide (SiC) have emerged as a favorable platform for optically

159 ation in the R-ACVBP and R-CHOP14 groups was SIC in 26% and 23% of patients and ASCT in 28% and 18% o

160 through a C-terminal Sufu-interacting site (SIC) in addition to a previously identified N-terminal s

161 a slowly decaying transient inward current (SIC) in CA1 pyramidal neurons and a transient inward cur

162 activates synchronous slow inward currents (SICs) in hippocampal pyramidal neurons, which are mediat

163 ynaptic NMDAR-mediated slow inward currents (SICs) in neighboring neurons, which can increase local n

164 NMDA receptor-mediated slow inward currents (SICs) in pyramidal neurons.

165 er select patients needing an alternative to SIC, including ASCT.

166 Exposure to HMW and LMW agents by SIC induced a differential nasal airway response includi

167 Purified Sic inhibited the adherence of a sic negative serotype M

168 to remove the last oxygen layer at the oxide/SiC interface.

169 match in spontaneous polarization at the AlN/SiC interface.

170 beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25-250 deg

171 d to study defect interaction dynamics in 3C-SiC irradiated at 100 degrees C with ions of different m

172 In addition, because SiC is a binary crystal, homo-nuclear spin pairs are bot

173 the overall crystal structure can be varied; SiC is an example of a material with many polytypes.

174 SiC is considered for applications in advanced nuclear s

175 It is not expected that SIC is directly involved in the circadian clock mechanis

176 The second virial coefficient in SIC is evaluated directly from the measured retention co

177 phene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film

178 long range order, demonstrating that the nc-SiC is fully amorphilized.

179 SIC is the first biological inhibitor of the antibacteri

180 Our hypothesis is that SICD is due to a dysregulated Crabtree effect, which is

181 SICS is here demonstrated on unlabeled M13 phages and on

182 Streptococcal inhibitor of complement (SIC) is a 31-kDa extracellular protein of a few, very vi

183 Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for hi

184 Streptococcal inhibitor of complement (Sic) is a secreted protein made predominantly by serotyp

185 Sepsis induced cardiac dysfunction (SIC) is a severe complication to sepsis which significan

186 Self-interaction chromatography (SIC) is a well-established method for studying protein-p

187 that HF etching of oxidized silicon carbide (SiC) leads to a very different surface termination, whet

188 The SIC lesions were postequatorial (n = 10), with a mean ba

189 We found that SICs, like COs, display interference, supporting the hyp

190 d in the circadian clock mechanism; instead, SIC likely contributes to pre-mRNA metabolism, and the s

191 ge states of both Si and C, the example of a SiC LIP is taken to illustrate the consistency and accur

192 used mice intravenously with radio-iodinated SIC made of OVA and rabbit IgG anti-OVA.

193 An ordered hierarchical macro-mesoporous SiC material was synthesized for the first time as a dem

194 Crystalline SiC materials can be obtained by this approach at a temp

195 /C composite nanostructures to corresponding SiC materials without losing their nanostructure morphol

196 leptiform activity without affecting SICs or SIC-mediated neuronal synchronization.

197 sic mutant alleles accumulate LATE ELONGATED HYPOCOTYL (

198 In addition, the sic mutant was phagocytosed and killed by human polymorp

199 sic mutants also lengthen free running period in a manne

200 , and the splice variants that accumulate in sic mutants likely affect the circadian clock response t

201 eld radiative heat transfer between parallel SiC nanobeams in the deep subwavelength regime.

202 eld-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a p

203 The addition of SiC nanoparticles shows similar results.

204 eral synthesis method for different kinds of SiC nanostructures, and it can also be readily extended

205 ermal conductivity of GaAs, GaN, AlN, and 4H-SiC near room temperature.

206 Purified Sic inhibited the adherence of a sic negative serotype M1 mutant and of non-Sic-producing

207 Unexpectedly, an isogenic sic-negative mutant adhered to human epithelial cells si

208 ced by SIC-positive workers was greater than SIC-negative workers (p < or = 0.001).

209 We observed that beta-SiC, neutron irradiated to 9 dpa (displacements per atom

210 report a simple method for the production of SiC NWs from inexpensive and abundantly available silica

211 A large-scale and facile production of SiC NWs is critical to its successful application.

212 Silicon carbide nanowires (SiC NWs) have attracted intensive attention in recent ye

213 ical route for the conversion of SiO2/C into SiC NWs, and may also have implications for the electros

214 n easily lead to the formation of homogenous SiC NWs.

215 jects with a suspicion of OA who completed a SIC, of whom 133 showed a positive response.

216 es result in neuronal NMDA receptor-mediated SICs only when appropriately excited.

217 We demonstrate the first SiC optomechanical microresonators that integrate high m

218 is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers.

219 s comparable with that grown on conventional SiC or sapphire substrates.

220 like epileptiform activity without affecting SICs or SIC-mediated neuronal synchronization.

221 reased the frequency and signaling charge of SICs over an extended period.

222 dge waste consisting of Si, silicon carbide (SiC) particles and metal impurities from the fragments o

223 to repair atomic lattice structures, and to SiC performance prediction as either a functional materi

224 PET2(-)/PET4(-) patients were assigned SIC, PET2(+)/PET4(-) patients were assigned ASCT, and PE

225 ic field induced changes in current within a SiC pn junction caused by the interaction of external ma

226 Mean MCP-1 produced by SIC-positive workers was greater than SIC-negative worke

227 ted by the few seconds-long consolidation of SiC powder in an industrial spark plasma sintering devic

228 gned sacrificial dies heat the pre-compacted SiC powder specimens to a critical temperature before ap

229 beta-SiC, preferred for nuclear applications, is metastable a

230 a sic negative serotype M1 mutant and of non-Sic-producing GAS strains to human epithelial cells.

231 SEF .N=O levels and SIC production of IL-2 and IFN-gamma in grafted DST mice

232 SIC properties did not differ between GAERS and NEC TC n

233 The SICD provides a useful alternative for high-energy (ICD)

234 pins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coheren

235 n of individual nuclear spins in diamond and SiC reaches 99% and beyond, it has been limited to 50-65

236 ision cascade density on radiation damage in SiC remain poorly understood.

237 rd currents (SOCs) and slow inward currents (SICs), respectively, in thalamocortical (TC) neurons of

238 Sequencing of the virulence gene sic revealed that all outbreak isolates had the same uni

239 Additionally, the robustness of the SiC semiconductor allows for operation in extreme condit

240 e we present single-cell genomic sequencing (SiC-seq), which uses droplet microfluidics to isolate, f

241 Unexpectedly, we found that SICs show interference in mutants in which CO interferen

242 cal inertness, and defect characteristics of SiC, show great potential for applications in metrology,

243 Subjects with a positive SIC showed a significantly higher rate of sIgE reactivit

244 cts without baseline NSBH despite a positive SIC showed a sputum eosinophil count >/=2%, a FeNO level

245 ized nc-SiC and melt-quenched single crystal SiC shows the similar topological features.

246 Specialised dental metrics (i.e. SIC, SIC(10) and SCIM(10)) permit the exploration of oth

247 e extracellular virulence factors, including Sic, SpeB, streptococcal pyrogenic exotoxin A, Mac prote

248 Using SIC, SST, and bathymetry, we identified separate chick-r

249 (Ru) in individual presolar silicon carbide (SiC) stardust grains bears the signature of s-process nu

250 shows a nonlocal photoresponse even when the SiC substrate is illuminated at distances greater than 5

251 The post-released graphene/SiC substrate is reused for multiple growth and transfer

252 w that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produce

253 Ds) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

254 ture gradient and crystalline quality of the SiC substrates influence their vaporization.

255 re formed on top of AlGaN/GaN transistors on SiC substrates.

256 ffect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser beam across

257 This result paves the way for SiC synthesis on polymers or plastics that cannot withst

258 h outcomes of specific inhalation challenge (SIC) testing.

259 eous implantable cardioverter-defibrillator (SICD), the preclinical and clinical data obtained so far

260 tate control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidire

261 Despite a positive SIC, there was no increase in the Feno levels after expo

262 sed that RIIb of LSEC eliminates blood-borne SIC, thereby controlling immune complex-mediated autoimm

263 Further studies examined the ability of SIC to block the biological activities of SLPI and lysoz

264 The data suggest that binding of Sic to ezrin alters cellular processes critical for effi

265 alent to mature Sic and inhibited binding of Sic to ezrin.

266 to induce a significant charge transfer from SiC to WSe2, where a reduction of valence band offset wa

267 nstitutional surgical innovation committees (SICs) to ensure appropriate oversight of surgical innova

268 With Cp(2)Zr(py)(Me(3)SiC[triple bond]CSiMe(3)) as the zirconocene reagent, th

269 e bond]CCH(2)](2)CH(2) with Cp(2)Zr(py)(Me(3)SiC[triple bond]CSiMe(3)) resulted in a zirconacyclopent

270 9) undergo coupling with Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(py) to give dimeric macrocycle

271 esC[triple bond]CPh with Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(pyr) afforded the zirconacyclo

272 rC[triple bond]CMes with Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(pyr) at ambient temperature ga

273 PrC[triple bond]CMes and Cp(2)Zr(eta(2)-Me(3)SiC[triple bond]CSiMe(3))(pyr) the major (and apparently

274 at all outbreak isolates had the same unique sic type.

275 ayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of deco

276 e infected with GAS populations expressing 2 Sic variants characterized by deletion of a region of th

277 h new streptococcal inhibitor of complement (Sic) variants arise in an infected individual is not kno

278 Sic variation occurs at a sufficient frequency in vivo t

279 lver ions at MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vi

280 Compared with controls, the SIC was 61% higher in overt HCM and 47% higher in subcli

281 and familial relation-adjusted analyses, the SIC was quantitatively different across subjects with ov

282 Sic was rapidly internalized by human epithelial cells,

283 The SIC was significantly correlated with extracellular volu

284 The occurrence of SICs was accompanied by an appearance of large vesicles

285 idence interval [CI] = 0.04-0.92, P = .039); SICS was associated with a significantly higher risk of

286 The frequency of SICs was positively correlated with [glutamate]o.

287 wing positive specific inhalation challenge (SIC) was restricted to phenotypes of subjects sharing co

288 capacity of liver RIIb to clear blood-borne SIC, we infused mice intravenously with radio-iodinated

289 osinophil counts assessed at baseline of the SIC were determined.

290 >/=0.35 kUA /l as compared to the result of SICs were 94%, 48%, 86%, and 71%, respectively.

291 The PAR-1 receptor-mediated increased SICs were abolished by several strategies that selective

292 postgrafting, the sponge infiltrating cells (SIC) were examined for cytotoxic T cell (CTL) and natura

293 This applies even to SiC, which is a prototypical nuclear ceramic and wide-ba

294 n antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wa

295 Silica-fused Si(3)N(4) and SiC whiskers were incorporated into a resin.

296 II) at their workplaces were collected after SIC with control and specific occupational agents.

297 cribe investigations into the interaction of SIC with three further major components of the innate im

298 e compared measurements of echocardiographic SIC with validated assessments of cardiac microstructura

299 by a positive specific inhalation challenge (SIC) with NRL gloves and in 25 symptomatic subjects with

300 1440 degrees C, began transforming to alpha-SiC, with radiation-induced Frank dislocation loops serv