ライフサイエンスコーパス: silicon

1 r abilities to promote rapid fluorination at silicon.

2 melting point such as supercooled water and silicon.

3 ining values comparable to that of amorphous silicon.

4 itude higher than that of single crystalline silicon.

5 antly driven CNOT gate for electron spins in silicon.

6 or platforms based on silicon nitride and on silicon.

7 ion of such reconfigurable waveguide mesh in silicon.

8 rface acceptor densities at the interface in silicon.

9 chitecture enables multi-qubit algorithms in silicon.

10 g a sphere made of dendrites of germanium in silicon.

11 R) photonic circuits consisting of amorphous silicon (a-Si) waveguides on an epitaxial barium titanat

12 ray of 25x25microm(2) hydrogenated amorphous silicon (a-Si:H) photosensors below the microfluidic chi

13 Amorphous silicon (a-Si:H) solar cells have been constructed on na

14 ation in native species (+19%) but decreased silicon accumulation in exotic species (-10%).

15 on dioxide (CO2 ) and air temperature affect silicon accumulation in grasses, especially in relation

16 Conversely, eT increased silicon accumulation in native species (+19%) but decrea

17 image the dynamics of electrons and holes in silicon after excitation with a short laser pulse.

18 the photodissociation mechanism of SiH2OO, a silicon analogue of the parent Criegee intermediate, CH2

19 rried out on a medium carbon steel with high silicon and additions of Mo and V for secondary hardenin

20 three-dimensional memristor arrays on large silicon and flexible substrates without increasing circu

21 Although other Group-14 elements silicon and germanium have complementary crystalline and

22 controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising

23 Silicon and phenolic concentrations were negatively corr

24 rectifying junction-formation between the n-silicon and the atomically thin boron layer.

25 uantum dots (QDs) at predefined locations on silicon and transparent glass surfaces: as proof of conc

26 r with an emission wavelength transparent to silicon, and a high-Q cavity of the silicon nanobeam.

27 ed under eCO2 in terms of both phenolics and silicon, and thus could suffer greater vulnerability to

28 e solid electrolyte interphase formed over a silicon anode in situ as a function of state-of-charge a

29 Sulfur cathodes and silicon anodes have garnered a lot of attention in the f

30 EI) formed during electrochemical cycling on silicon anodes was analyzed with a combination of soluti

31 Silicon appears to be the right choice as a carbon isost

32 This article emphasized porous silicon as a host material for enzyme immobilization and

33 ansparent foils of single-crystal gold using silicon as a template.

34 s a distinct advantage in processing optical silicones, as the high peak intensity achieved in the fo

35 mes on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-st

36 uce quasi-random nanostructures in amorphous silicon at wafer scales that achieved over 160% light ab

37 yl benzene precursors, the connectivity of a silicon atom within the network extends beyond its chemi

38 of the hexacoordinate environment around the silicon atoms is given by (29)Si nuclear magnetic resona

39 capable of covalently coordinating to eight silicon atoms.

40 The 780 nm photons are measured with a silicon avalanche photodiode, and the 3950 nm photons ar

41 udy how a second gate voltage applied to the silicon back gate modifies the measured microwave transp

42 ARPES data show compelling evidence that the silicon based 2D overlayer is responsible for the observ

43 demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates

44 Synthetic silicon-based circuitry similarly relies on spatial cons

45 ng each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated

46 for modifying local electronic properties in silicon-based electronics.

47 network of micromechanical oscillators with silicon-based fabrication process can be robust against

48 approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound

49 Further, several schemes on porous silicon-based immobilized enzyme biosensors for the dete

50 usly catalytic amounts of two key players, a silicon-based Lewis superacid and a nucleophilic gold ac

51 ld "cradle" that interfaces the phone with a silicon-based microfluidic chip embedded within a credit

52 use of inorganic cements based on calcium or silicon-based mineral aggregates.

53 report the generation of dynamical chaos in silicon-based monolithic optomechanical oscillators, ena

54 tegrated TMD-silicon nanolasers suitable for silicon-based nanophotonic applications in silicon-trans

55 d efficient crosstalk reduction approach for silicon-based nanophotonic circuits by introducing a per

56 the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinea

57 modulators, could be directly integrated on silicon-based processors.

58 compatible with existing infrastructure for silicon-based technologies.

59 Black silicon (bSi) wafers with a high density of high-aspect

60 character that transfer electrophilicity to silicon by Si-H activation.

61 rategy to achieve this including crystalline silicon (c-Si) solar cell.

62 Silicon can also be introduced to replace other heteroat

63 Silicon can be strategically introduced in a molecule to

64 Lithiated silicon can serve as either a pre-lithiation additive fo

65 erometer is fabricated from a single-crystal silicon cantilever on a transmission electron microscope

66 Defects in silicon carbide (SiC) have emerged as a favorable platfo

67 graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused l

68 Point defects in silicon carbide are rapidly becoming a platform of great

69 Silicon carbide nanowires (SiC NWs) have attracted inten

70 lculations of the surface energy of the same silicon carbide plane.

71 ransfer single crystalline graphene grown on silicon carbide substrates to flexible polycarbonate tra

72 rect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure.

73 sure the fracture energy for a bi-crystal of silicon carbide, diffusion bonded with a thin glassy lay

74 bility in epitaxial graphene on silicon-face silicon carbide.

75 We report colloidal routes to synthesize silicon@carbon composites for the first time.

76 n fact, the first monomeric, four-coordinate silicon carbonate complex 4 was isolated and fully chara

77 of a recently introduced synergistic gold(I)-silicon catalysis concept capable of producing simultane

78 ency around 15% for 3 micrometers ultra-thin Silicon cell.

79 The stereochemical course at the silicon center was investigated utilizing a (2)H-labeled

80 d silolane probe; complete scrambling at the silicon center was observed, consistent with a number of

81 lation mechanisms that feature electrophilic silicon centers.

82 anufactured on a 30-microm-thick crystalline silicon chip by chemical etching process, which produced

83 We applied the recently introduced silicon chip coated with a functional polymer named copo

84 ht is demonstrated in silica waveguides on a silicon chip.

85 l etching process, which produced a flexible silicon chip.

86 Individual donors in silicon chips are used as quantum bits with extremely lo

87 rom hen's egg and cow's milk were spotted on silicon chips coated with copoly(DMA-NAS-MAPS) along wit

88 and functional microelements directly inside silicon chips.

89 Using compressed sensing concepts and silicon complementary metal-oxide-semiconductors (CMOS),

90 ete agreement with former studies of similar silicon compounds, molecules 1 and 4 prefer to adopt the

91 in group chemistry and especially low-valent silicon compounds, the interplay between oxidative addit

92 Solid substrates (glass and crystalline silicon) covalently functionalized with a representative

93 ets play a more important role in the global silicon cycle than previously appreciated.

94 g as heating sources; hydrogenated amorphous silicon diodes acting both as temperature sensors to mon

95 rray of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one-dimensional, free-standing ph

96 The analytical procedure was set up on a silicon dioxide flat substrate to standardize SERS metho

97 ophobic self-assembled monolayers on gold or silicon dioxide were used to harvest conditioning layers

98 d differential adsorption of the vesicles on silicon dioxide, titania, and gold surfaces, and the dif

99 use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor

100 te strong coupling of a single electron in a silicon double quantum dot to the photonic field of a mi

101 We examine the annual flux of dissolved silicon (DSi) carried by effluent from the second larges

102 Although recent developments in sulfur and silicon electrodes show exciting results in half cell fo

103 The performance of GaN-on-Silicon electronic devices is severely degraded by the p

104 articularly attractive in the context of non-silicon electronics and photonics, where the ability to

105 's Law, the increasing energy consumption in silicon electronics has motivated research into emerging

106 n between secondary zinc organometallics and silicon electrophiles.

107 ation of ternary nanosheets with macroporous silicon enables highly efficient solar-driven photoelect

108 ation reactions of silyl ketene acetals, the silicon enolates of esters, to form products containing

109 However, Silicon exhibits limitations in ultraviolet absorption b

110 nsity, and mobility in epitaxial graphene on silicon-face silicon carbide.

111 As an exemplary demonstration, silicon flexible tactile sensors are fabricated with sen

112 The hydrolysis-resistant aryl silicon fragment is promising as a convenient synthon fo

113 aterials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalco

114 wo different morphologies, the first being a silicon-germanium compositionally segregated Janus parti

115 We first produce an array of silicon-germanium particles embedded in silica, through

116 The formation of hybrid silicon-gold NPs as a result of the laser action on a mi

117 The temperature dependence of the silicon-graphene conductive photodetector is studied for

118 Here we design and demonstrate a silicon-graphene conductive photodetector with improved

119 ult, the capacity retention of the lithiated silicon/graphene-SeS2 full cell is 81% after 1,500 cycle

120 ing elemental materials, including tungsten, silicon, graphite, diamond and graphene, for point defec

121 d ex situ markers to resolve several complex silicon growths, including the formation of nodes, kinks

122 Recently, silicon has been an exceptional anode material towards l

123 phasis on case studies where introduction of silicon has created a benefit over its analog.

124 curable materials, thermally curable optical silicones have a number of advantages, such as strong UV

125 bered cyclic silylene (4) via insertion of a silicon(I) atom of 2 into the Cphenyl-N bond of the carb

126 , which proceeded through the formation of a silicon(I) radical intermediate, afforded [(IMe )2 SiH](

127 The trapping of a silicon(I) radical with N-heterocyclic carbenes is descr

128 Its HOMO is largely localized at the silicon(II) atom and the LUMO has mainly boron 2p charac

129 rbon nanotube transistors as replacements to silicon in conventional computing structures, and numero

130 erspective focuses on the opportunities that silicon incorporation offers in drug discovery, with an

131 ed to illustrate the complete integration of silicon integrated circuits via pick and place or using

132 ytic cycle, which involves a pentacoordinate silicon intermediate consisting of silane reagent, subst

133 e [1,2]-Brook rearrangements via hypervalent silicon intermediates induced by photoredox-catalyzed si

134 Silicon is an excellent material for microelectronics an

135 elatively low temperature where no doping of silicon is expected.

136 40% of ultrapure silicon is lost as kerf during slicing to produce wafers

137 Seven silicon(IV) phthalocyanine carboxylate esters (SiPcs, 1-

138 died the kinetics of carbon elimination from silicon kerf in two atmospheres: air and N2, under a reg

139 is strategy extracts a patterned sacrificial silicon layer through hundreds of millions of nanoscale

140 e interferometer consists of two 45-nm-thick silicon layers separated by 20 mum.

141 ther, and dissociation of tert-butoxide from silicon lead to the silylated heteroarene product.

142 because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible wi

143 ion, we compute this quantity for nanoporous silicon materials.

144 be prepared with tubular pores imbedded in a silicon matrix.

145 arrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 mum and then tra

146 of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the succes

147 The working range of the silicon microarray for total hen's egg-specific IgE was

148 confirmed the ability of the polymer coated silicon microarray to be comparably sensitive to the Imm

149 AP system, whereas for total cow's milk, the silicon microarray was less sensitive.

150 with IgE- and IgG4 -specific fluorescence on silicon microarrays.

151 work, we demonstrate the use of a sensitive silicon microcantilever (MC) system with a porous silico

152 sed temperature sensor was integrated into a silicon microchip and occupied 0.15 mm(2) of area.

153 abrication techniques are primarily based on silicon micromachining processes, resulting in rigid and

154 .9%/W and 454.4 %/W has been obtained in the silicon microring resonator, respectively.

155 ron mobility and drive currents in n-channel silicon MOSFETs.

156 arent to silicon, and a high-Q cavity of the silicon nanobeam.

157 Ds as practical materials for integrated TMD-silicon nanolasers suitable for silicon-based nanophoton

158 While thermal transport in silicon nanomeshes has been previously interpreted by ph

159 ence is unimportant for thermal transport in silicon nanomeshes with periodicities of 100 nm and high

160 labeled and energy-focusing porous discoidal silicon nanoparticles (nanodisks) and high-throughput ma

161 be efficiently employed for the synthesis of silicon nanoparticles (NP), which are characterized by a

162 tically stable, NIR photoluminescent, porous silicon nanoparticles with a relatively high two-photon-

163 membrane material in combination with porous silicon nanoparticles.

164 By coherently combining MMIP extraction and silicon nanopillar-based SERS biosensor, good sensitivit

165 xin was screened within 10min on gold coated silicon nanopillars and a new paper-based SERS substrate

166 n Ag-coated microfluidic channel on a p-type silicon nanowire (SiNW) array measured by a multiplexed

167 specific antigen (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with

168 Silicon nanowire field effect transistors (NWFETs) are l

169 Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic

170 veloped a more sustainable method to produce silicon nanowires (Si NWs) in bulk quantities through th

171 the resonant scattering wavelength of single silicon nanowires is tunable across the entire visible s

172 nergy-consuming annealing, an interconnected silicon network is directly derived from glass bottles v

173 different microresonator platforms based on silicon nitride and on silicon.

174 signing analogues of freeform optics using a silicon nitride based metasurface platform for operation

175 trate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufac

176 Herein, the strain induced by silicon nitride is firstly characterized through the cha

177 t, a double-barrel pipet, and a freestanding silicon nitride membrane.

178 Silicon nitride stress capping layer is an industry prov

179 S-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation.

180 Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techn

181 magnitude larger than that in stoichiometric silicon nitride.

182 R) plasmons and IR active optical phonons in silicon nitride.

183 A single layer composed of silicon NPs has been deposited from the colloidal soluti

184 Moreover, declines in silicon occurred mainly in native species (-19%), but re

185 is demonstrated here, by simulations, in the silicon on insulator platform.

186 The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotat

187 nd by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be tra

188 on of any fluid-dispersed 2D nano-objects on silicon-on-insulator photonics platform.

189 The presented circulator is compact, its silicon-on-insulator platform is compatible with both su

190 Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrat

191 300 nm(2), which are monolithically grown on silicon-on-insulator substrates.

192 d photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system.

193 inants to remove in kerf without significant silicon oxidation.

194 erties of large-area monolayer MoS2 grown on silicon oxide by using chemical vapor deposition.

195 and Hep-C viruses in blood using nanoporous silicon oxide immunosensor array and artificial neural n

196 on microcantilever (MC) system with a porous silicon oxide layer deposited on the active side of the

197 Included is the evaluation of porous silicon oxide present on different geometries of MCs and

198 For silicon oxide substrate and pressure loading, mode mixit

199 While the interface between MoS2 and silicon oxide was fractured under displacement control,

200 ze the adhesion interaction between MoS2 and silicon oxide.

201 estigated the short-range order of amorphous silicon oxycarbide (SiOC) alloys by using the atomic pai

202 inhibits dissociation of the aligned loaded silicon-oxygen bonds.

203 The fabricated silicon p-n junction exhibits clear diode rectification

204 +4 degrees C) affected chemical composition (silicon, phenolics, carbon and nitrogen) and plant growt

205 gh optical absorption at 450nm, using a CMOS silicon photodiode as the photodetector.

206 construction algorithms and other multimodal silicon photomultiplier and non-silicon photomultiplier

207 ttrium oxyorthosilicate crystals read out by silicon photomultiplier arrays.

208 r multimodal silicon photomultiplier and non-silicon photomultiplier PET detector system designs indi

209 3D printed microfluidics chips coupled with silicon photomultipliers (SiPMs) for high sensitive real

210 valanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.The

211 of lipid bilayer nanodiscs and a multiplexed silicon photonic analysis technology enables high-throug

212 Nonlinear silicon photonic devices have attracted considerable att

213 se findings indicate that the combination of silicon photonic microring resonator arrays and nanodisc

214 oiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neu

215 to laser-class neurons, are compatible with silicon photonic platforms.

216 The most advanced photodetectors in the silicon photonic process are based on germanium, but thi

217 field in the tapered hydrogenated amorphous silicon photonic wires with either decreasing dispersion

218 m a monolayer of molybdenum ditelluride on a silicon photonic-crystal cavity.

219 nnect components that can be integrated with silicon photonics and complementary metal-oxide-semicond

220 r results will be useful both in traditional silicon photonics applications and in high-sensitivity a

221 At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast

222 Silicon photonics has emerged as a leading architecture,

223 is well within the design rules of a typical silicon photonics process, with a minimum radius of curv

224 patible with both superconducting qubits and silicon photonics, and its noise performance is close to

225 very probes leveraging the maturing field of silicon photonics, enabling massively parallel fabricati

226 d efficient frequency mixing integrated with silicon photonics.

227 ucing losses caused by the metal contacts in silicon photovoltaics, particularly the optical and resi

228 nd monolithic III-V photonic components on a silicon platform.

229 Silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesul

230 t higher pressures, the dominant species are silicon-polyhedral bound carbonates, tetrahedral coordin

231 ical surface of the rat brain, combined with silicon probe recordings in the hippocampus, to identify

232 Silicon probes based on microfabrication can yield large

233 ection modes based on conventional thin film silicon processes that are suitable for the large-scale

234 Nanoporous silicon produced by electrochemical etching of highly B-

235 Donor spins in silicon provide state-of-the-art coherence and quantum g

236 This immunosensor was based on porous silicon (PSi) and modified by antibodies against OTA (an

237 A label-free porous silicon (pSi) based, optical biosensor, using both an an

238 Immunoadjuvant porous silicon (PSi)-based nanovaccines are prepared by nanopre

239 o valley states of an electron confined in a silicon quantum dot.

240 Qubits based on silicon quantum dots are emerging as leading candidates

241 too small to probe with conventional methods.Silicon quantum dots provide a promising platform for qu

242 for scalable spin-based quantum computers in silicon.Quantum computers will require a large network o

243 However, lithiated silicon reacts vigorously with the standard slurry solve

244 materials were investigated by examining the silicon release level in the immersion solution and the

245 or the creation of a depletion zone in the n-silicon resulting in a rectifying junction-formation bet

246 rane probes, based on the membrane-permeable silicon-rhodamine dye HMSiR, that assemble in situ and e

247 es has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possess

248 ternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limi

249 for driving high-harmonic generation in thin silicon samples, producing harmonics up to 19th order w

250 Silicon (Si) plays a pivotal role in the nutritional sta

251 on of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved over large areas w

252 he gas-phase reaction of ground-state atomic silicon (Si) with silane (SiH4 ) under single-collision

253 In large rivers, the ratios of silicon (Si)/nitrogen (N)/phosphorus (P) have changed dr

254 s-bent and twisted structure and the longest silicon-silicon double bond reported to date.

255 The use of new silicon single crystals highly enriched in (28)Si recent

256 er a broad spectral range.The performance of silicon single-photon avalanche detectors is currently l

257 of other elements as well, such as vertical silicon slot waveguides.

258 Silicon solar cells comprising this encapsulation archit

259 Silicon solar cells have captured a large portion of the

260 cells are needed to boost the efficiency of silicon solar cells to beyond Schottky-Queisser limit, b

261 viable strategy to improve the efficiency of Silicon solar cells with mass-compatible techniques that

262 corated substrates integrated with amorphous silicon solar cells.

263 ompressive stresses are measured within pure silicon solidified in silica as a direct consequence of

264 f a weakened Si-H bond of a hypercoordinated silicon species as detected by IR, or by traces of oxyge

265 alline frameworks composed of hexacoordinate silicon species have thus far only been observed in a fe

266 Additionally, other electrophilic silicon species, such as silylene complexes and eta(3) -

267 circuits by introducing a periodic array of silicon strips between adjacent waveguides.

268 stability are fabricated on pyramid-textured silicon substrates by applying a water-insoluble ester a

269 spanning membranes (PSMs) prepared on porous silicon substrates with large pore diameters of 5 mum, a

270 efficacious in the fluorination of hindered silicon substrates, with fluorination yields dependent o

271 rihalide perovskites that are deposited onto silicon substrates.

272 rates allows savings on the high cost of non-silicon substrates.

273 occupies less than half the space of leading silicon technologies, while delivering a significantly h

274 As conventional monolithic silicon technology struggles to meet the requirements fo

275 ements (boron, carbon, nitrogen, oxygen, and silicon) that are characterized by high architectural an

276 mpared with most active media (for instance, silicon) that provide limited activity, vanadium dioxide

277 But unlike silicon, the nature of the transport band gap in CNTs is

278 dicating promise for application in low-cost silicon thin film solar cells.

279 al on the interaction between graphene and a silicon tip in an ionic liquid and describe it within th

280 r silicon-based nanophotonic applications in silicon-transparent wavelengths.

281 robust SE pumping via a single-trap level in silicon up to 7.4 GHz, at which the pumping current exce

282 erial has a purity level never achieved with silicon used to manufacture previous one-kilogram sphere

283 ication of complex 3D structures deep inside silicon using 1 microm-sized dots and rod-like structure

284 nd most tailorable nonlinear interactions in silicon using a new class of optomechanical waveguides t

285 jor spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge

286 The negatively charged silicon-vacancy centre combines the advantages of its hi

287 emonstration of coherent control of a single silicon-vacancy centre spin with a microwave field.

288 3 microm thin films spin-coated on amorphous silicon validates its use for on-chip energy-storage app

289 hisman Superfund Study Area TCE plume in the Silicon Valley of California.

290 In silicon, valley states represent a degree of freedom in

291 example, we demonstrate that NiPd-NG-Si (Si=silicon wafer) can function as a catalyst and show maxim

292 (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabricati

293 trochemical etching of highly B-doped p-type silicon wafers can be prepared with tubular pores imbedd

294 hors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

295 Here, we demonstrate a silicon waveguide-integrated light source and photodetec

296 xceedingly weak in conventional nanophotonic silicon waveguides.

297 Mineral compounds, such as silicon, were found in great amounts by the Scanning ele

298 Grasses are hyper-accumulators of silicon, which play a crucial function in the alleviatio

299 ly-shallow junction at the surface of n-type silicon with excellent electrical and optical characteri

300 processor based on electron-nuclear spins in silicon, with electrical control and coupling schemes th