ライフサイエンスコーパス: silicon carbide

1 bility in epitaxial graphene on silicon-face silicon carbide.

2 kanes using Fe and Ni particles supported on silicon carbide.

3 ctly view and measure stable crack growth in silicon carbide.

4 gs potential similar to or exceeding that of silicon carbide.

5 inated silicon and carbon faces of hexagonal silicon carbide.

6 y more stable than a mixture of SiO2, C, and silicon carbide.

7 nhydride have also been observed on powdered silicon carbide.

8 Silicon carbide and gallium nitride, two leading wide ba

9 graphene thin films deposited on insulating silicon carbide and report the characterization of their

10 and surface reconstruction of single-crystal silicon carbide and study this process by high-resolutio

11 ed) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths.

12 otubes (SWCNTs) and nanorods or particles of silicon carbide and transition metal carbides.

13 f materials such as hexagonal boron nitride, silicon carbide, and others.

14 We used SLG surfaces supported on copper, silicon carbide, and transparent fused silica (SiO(2)) s

15 Point defects in silicon carbide are rapidly becoming a platform of great

16 de graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ball

17 As a central theme silicon carbide based materials are picked out, but also

18 rred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra i

19 itaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization.

20 tization with graphite, carbon nanotubes, or silicon carbide can be used to carry out reactions more

21 ion everolimus-eluting DP-DES, or thin-strut silicon-carbide-coated BMS in 8 European centers.

22 ate that the silicon in the derivative forms silicon carbide compounds in the heated cupric oxide rea

23 umstellar outflows and the corresponding low silicon carbide condensation temperatures.

24 orine doping on hydrophobicity of nanoporous silicon carbide-derived carbon (SiCDC), and investigate

25 sure the fracture energy for a bi-crystal of silicon carbide, diffusion bonded with a thin glassy lay

26 e been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material.

27 sed FBC used in combination with an uncoated silicon carbide filter and report effects on emissions o

28 transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorit

29 agonal structure, by extracting silicon from silicon carbide in chlorine-containing gases at ambient

30 y the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of

31 metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contami

32 rgely directed towards converting silicon or silicon carbide into other chemicals.

33 Cradle-to-gate, silicon carbide is estimated to require more than twice

34 Silicon carbide is used as AFM tip material, resulting i

35 w the undulation of ripples on both graphene-silicon carbide junctions.

36 Here we demonstrate high-frequency multimode silicon carbide microdisk resonators and spatial mapping

37 d for measuring the electrical properties of silicon carbide nanoclusters and gallium arsenide nanowi

38 e we show that a dense uniform dispersion of silicon carbide nanoparticles (14 per cent by volume) in

39 High-temperature oxidation of silicon-carbide nanoparticles (nSiC) underlies a wide ra

40 Silicon carbide nanowires (SiC NWs) have attracted inten

41 GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation.

42 ically made from single-crystalline silicon, silicon carbide or gallium nitride p-n junction photodio

43 lculations of the surface energy of the same silicon carbide plane.

44 ir saturated forms; hexagonal boron nitride; silicon carbide), rare earth, semimetals, transition met

45 simulation of indentation of nanocrystalline silicon carbide reveals unusual deformation mechanisms i

46 ansformation to any depth, so that the whole silicon carbide sample can be converted to carbon.

47 Silicon carbide (SiC) exhibits excellent material proper

48 The circumstellar silicon carbide (SiC) grain X57 from the Murchison meteo

49 Silicon carbide (SiC) has unique chemical, physical, and

50 Notably, several defects in silicon carbide (SiC) have been suggested as good candid

51 Defects in silicon carbide (SiC) have emerged as a favorable platfo

52 Silicon carbide (SiC) is a fascinating wide-band gap sem

53 esent work shows that HF etching of oxidized silicon carbide (SiC) leads to a very different surface

54 semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS

55 s consumed as sludge waste consisting of Si, silicon carbide (SiC) particles and metal impurities fro

56 ion of ruthenium (Ru) in individual presolar silicon carbide (SiC) stardust grains bears the signatur

57 graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused l

58 ond with those of several deep centers in 4H silicon carbide (SiC).

59 ty with measurement of the surface energy of silicon carbide single crystals.

60 rowth of graphene nanoribbons on a templated silicon carbide substrate prepared using scalable photol

61 ngular pillars etched into a semi-insulating silicon carbide substrate.

62 ransfer single crystalline graphene grown on silicon carbide substrates to flexible polycarbonate tra

63 operties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availabil

64 se laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation

65 Specifically, the silicon carbide surfaces are hydrophilic with hydroxyl t

66 The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-p

67 gas mixture leads to a stable conversion of silicon carbide to diamond-structured carbon with an ave

68 raphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 1

69 , were monolithically integrated on a single silicon carbide wafer.

70 tunneling spectroscopy of graphene grown on silicon carbide, we directly observed the discrete, non-

71 ed containing largely debris of silicon, and silicon carbide, which is a common cutting material on t

72 l vapor deposition (CVD) or via reduction of silicon carbide, which unfortunately relies on the abili

73 rect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure.

74 is work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers.