ライフサイエンスコーパス: silicon dioxide

1 a conductive nanocrystal silicon filament in silicon dioxide.

2 ct contact with silicon, with no interfacial silicon dioxide.

3 e and combustion of the precipitate to yield silicon dioxide.

4 mension was obtained for an unpaired spin in silicon dioxide.

5 ed cupric oxide reactor, rather than forming silicon dioxide.

6 ease caused by the inhalation of crystalline silicon dioxide.

7 al analysis (GKMA) method to study amorphous silicon dioxide (a-SiO2).

8 nly used in biochemical reactions can remove silicon dioxide, a material frequently used as the solid

9 eposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rate

10 re important inorganic examples too, such as silicon dioxide and elemental selenium (the latter being

11 uctor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades

12 The wavelike silicon dioxide arch microstructure exhibits Young modul

13 is technology close at hand, alternatives to silicon dioxide are being pursued to enable new function

14 neration branched polyamidoamine dendrons on silicon dioxide as a way to tailor and control the subse

15 th temperature allows for the removal of the silicon dioxide barrier layer associated with catalytic

16 We examined PCR in silicon dioxide-coated silicon-glass chips (12 microl in

17 rs (TFTs) with high field effect mobility on silicon dioxide dielectrics that are treated with alkylt

18 ilized on the surface of streptavidin-coated silicon dioxide exhibited specific capture of pathogenic

19 covalently immobilizing arrayed probes on a silicon dioxide film.

20 The analytical procedure was set up on a silicon dioxide flat substrate to standardize SERS metho

21 eep by concentrating the collected prions on silicon dioxide, followed by amplification by serial pro

22 rgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices

23 al devices based on nanocrystals embedded in silicon dioxide has been the development of a method for

24 ansdermal biosensor makes use of an array of silicon-dioxide hollow microneedles that are about one o

25 notubes (CNTs) accelerate the wet etching of silicon dioxide in a strong alkaline solution.

26 epth over time, and we find the etch rate of silicon dioxide in different buffers that ranges from 2.

27 ere kept constant by adding an inert filler, silicon dioxide in inverse concentrations to the fiber f

28 s similar to that of the quartz polymorph of silicon dioxide, indicating that it is an extended coval

29 endent conductance properties of the classic silicon dioxide insulator.

30 The silicon dioxide is converted to cesium hexafluosilicate

31 Silicon dioxide is one of the most abundant natural comp

32 m gold micro-electrodes fabricated on native silicon dioxide layer grown on semiconducting single cry

33 oconductors that are supported directly on a silicon dioxide layer, and we measure the minimum featur

34 rved PR topography can be transferred to the silicon dioxide layer.

35 s) but forms TFTs with poor mobility on bare silicon dioxide (<0.005 cm2/V s).

36 ned elusive despite the indispensable use of silicon dioxide materials in advanced electronic devices

37 molded materials in porous silicon or porous silicon dioxide multilayer (rugate dielectric mirror) st

38 copolymer and hydrophobic surface functional silicon dioxide nanoparticles that are infused into one

39 e wavelength of visible light, a transparent silicon dioxide nanopillar embedded in a nontransparent

40 we demonstrate the use of vertically aligned silicon dioxide nanopillars to achieve below-the-diffrac

41 s inflammasome agonists, including nanoscale silicon dioxide (NanoSiO2), calcium pyrophosphate dihydr

42 sor based on a p-n junction, is created on a silicon dioxide/nitride surface by anisotropic etching.

43 trate this new approach together with larger silicon dioxide particles (SiO2, 0.5 mum) representing N

44 yer of bovine serum albumin (BSA), while the silicon dioxide regions where the OTMS has been removed

45 m electrode separation were fabricated using silicon dioxide sacrificial layer techniques.

46 for enzyme variants capable of synthesizing silicon dioxide (silica) or titanium dioxide (titania) c

47 vapour deposited graphene films on sapphire, silicon dioxide/silicon and germanium.

48 ical vapor deposition (CVD) method on either silicon dioxide (SiO(2)) on silicon (Si) or Si substrate

49 n important atmospheric constituent, whereas silicon dioxide (SiO2) is a covalent solid, and one of t

50 rray of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one-dimensional, free-standing ph

51 ed by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene

52 Films of silicon dioxide (SiO2) were deposited at room temperatur

53 Three different types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and tit

54 abricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (

55 separated from a gold ground plane by a thin silicon dioxide spacer.

56 ging micropatterned platinum structures at a silicon dioxide substrate in intermittent (dynamic) and

57 of single-crystalline silicon supported on a silicon dioxide substrate.

58 Silicon and silicon dioxide substrates placed in the path of the ato

59 eld-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as

60 with different phosphoinositides on silicon/silicon dioxide substrates to quantify the binding of va

61 kappa of monolayer graphene exfoliated on a silicon dioxide support is still as high as about 600 wa

62 et NbOx (x = 2 and 2.5) films deposited on a silicon dioxide surface as references.

63 ed the same volatility and reactivity with a silicon dioxide surface as those of the hexacarbonyl com

64 on the micrometer scale, were prepared on a silicon dioxide surface by direct exfoliation of crystal

65 SLBs are prepared on the silicon dioxide surface of the microcantilevers using a

66 r of n-octadecyltrimethoxysilane (OTMS) on a silicon dioxide surface.

67 r higher permittivity dielectrics to replace silicon dioxide, the properties of which have hitherto b

68 d differential adsorption of the vesicles on silicon dioxide, titania, and gold surfaces, and the dif

69 easurements of graphene samples on amorphous silicon dioxide to show that full recovery to the therma

70 m the chemical mechanical polishing (CMP) of silicon dioxide using ceria slurry and ceria fixed abras

71 (2) and GeO(2) where the surface area of the silicon dioxide was 2 orders of magnitude higher than th

72 ophobic self-assembled monolayers on gold or silicon dioxide were used to harvest conditioning layers

73 release revealed that pSiO2-CO2H:DNR (porous silicon dioxide with covalent loading of daunorubicin) w