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1 he biologically effective characteristics of silicon nitride.
2 magnitude larger than that in stoichiometric silicon nitride.
3 R) plasmons and IR active optical phonons in silicon nitride.
4 ck-etched to span a 800-nm-thick membrane of silicon nitride.
6 ion between the LPS on these strains and the silicon nitride AFM tip were measured, and the Alexander
7 study, the wetting properties of silicon and silicon nitride AFM tips are investigated through dynami
13 signing analogues of freeform optics using a silicon nitride based metasurface platform for operation
14 Many solid oxides and nitrides, particularly silicon nitride-based materials such as M(2)Si(5)N(8) an
16 ng the chemistry of bimolecular reactions of silicon nitride diatomics in chemical vapor deposition t
17 experimentally by measuring the thickness of silicon nitride film deposited in several increments on
18 trate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufac
21 y by a magnet, and a nanoscale knife made of silicon nitride is manipulated to contact, bend and scan
22 ein microcrystals deposited on an ultra-thin silicon nitride membrane and embedded in a preservation
23 pical simulated system included a patch of a silicon nitride membrane dividing water solution of pota
24 rticles in aircraft plumes were performed on silicon nitride membrane grids using transmission electr
26 5- or 10- microm aperture in a 500-nm thick silicon nitride membrane to localize and limit transmitt
27 etre-diameter pore, sputtered through a thin silicon nitride membrane, can be used to detect the prim
30 By using nanopores fabricated in 20 nm-thin silicon nitride membranes and highly sensitive electrica
31 and electron-beam lithography and tuning of silicon nitride membranes have emerged as three promisin
32 rication process to grow and define circular silicon nitride membranes on glass chips that successful
38 cell culture is equipped with an array of 16 silicon nitride micropipet-based ion-selective microelec
39 tion--to be realized with small air holes in silicon nitride (n = 2.02), and even glass (n = 1.45).
42 Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97%
43 of the ion current through hafnium oxide and silicon nitride nanopores allow the analysis of sub-30 k
46 nt, based on thermomechanical measurement of silicon nitride nanostrings, represents the highest mass
47 ingle-side polished) coated with 1 microm of silicon nitride on both sides are patterned and etched t
51 r the first time through the reaction of the silicon nitride radical (SiN) with acetylene (C(2)H(2))
53 ere able to study the notoriously refractory silicon nitride radical in reaction with ethylene under
56 between pathogenic L. monocytogenes EGDe and silicon nitride (Si(3)N(4)) were measured using atomic f
57 ol, nuclear targets are created using PAD on silicon nitride (Si(3)N(4)) windows with silicon frames.
59 irst time that an optimized biomedical grade silicon nitride (Si3N4) demonstrated cell adhesion and i
60 nt types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium oxynitride (TiON)
62 ure was fabricated with silicon oxide (SiO2)/silicon nitride (Si3N4)/silicon oxide on a p-type silico
63 near-field radiation between silica-silica, silicon nitride-silicon nitride and gold-gold surfaces t
65 on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architec
67 es fabricated by focused ion beam milling of silicon nitride (SiN) membranes, enabling the reproducib
68 ricated by focused ion beam (FIB) milling of silicon nitride (SiN) membranes, with 100 pores in a hex
70 om, i.e. shifting from the cyano (CN) to the silicon nitride (SiN) radical, has a dramatic influence
71 structure - cyano (CN), boron monoxide (BO), silicon nitride (SiN), and ethynyl (C2H), and their reac
73 e first time how an atomically thin (0.4 nm) silicon nitride (SiNx) interlayer helps in maintaining/i
74 to surface stresses and thus is embedded in silicon nitride so as to avoid direct contact with the s
78 ect transistor (FET) through deposition of a silicon nitride stress liner that warps both the gate an
79 ical deformation of up to 20 nanometres in a silicon nitride structure, using three milliwatts of con
80 copy to detect the remote Joule heating of a silicon nitride substrate by a single multiwalled carbon
83 at were present when a bond formed between a silicon nitride surface (atomic force microscopy tip) an
87 Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techn
89 compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-
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