ライフサイエンスコーパス: thin film

1 n an epitaxial barium titanate (BaTiO3, BTO) thin film.

2 e dependent optical absorption of the garnet thin film.

3 phene, between the substrate and the brittle thin film.

4 ic cobalt layers in a polycrystalline cobalt thin film.

5 gnetic disks covered by a superconducting Nb thin film.

6 oss-linking agent, in the form of a flexible thin film.

7 adruple-cation lead halides in bulk and in a thin film.

8 de, increasing the overall resistance of the thin film.

9 died subset of exciton dynamics in molecular thin films.

10 crucial for understanding glassy dynamics in thin films.

11 onally used to study crystalline metal oxide thin films.

12 de (TMC) and metal-modified TMC surfaces and thin films.

13 aking alternate contacts with CYTOP and PTFE thin films.

14 temperature can be enhanced significantly in thin films.

15 or the atomic layer deposition (ALD) of MoS2 thin films.

16 100 folds lower than that of polycrystalline thin films.

17 ive solution to this problem, especially for thin films.

18 nly one order of magnitude lower than in the thin films.

19 ce of p-type transparent copper iodide (CuI) thin films.

20 ineer magnetic functional phenomena in oxide thin films.

21 wo forms: single-crystals or polycrystalline thin films.

22 stal orientation in the Na-incorporated CIGS thin films.

23 organic-inorganic trihalide lead perovskite thin films.

24 electrical conductivity of nanoribbon-based thin films.

25 aturation than traditional Hg sphere-caps or thin-films.

26 entally using light-trapping structures in a thin film absorber as a model system.

27 Going from bulk systems to thin films additionally affects their phase diagram.

28 n to stabilise Neel domain walls in magnetic thin films, allowing high domain wall velocities driven

29 Growing the COF as a vertically oriented thin film allows for the construction of an ordered inte

30 TI shows a low optical bandgap of 1.49 eV in thin film and a high molar extinction coefficient of 1.9

31 h was tailored to determine diffusivity from thin film and from poly-dispersed powdered samples.

32 s great interest in releasing single crystal thin films and fabricating flexible electronics with the

33 The synthesis of bulk crystals, thin films and nanostructures plays a seminal role in ex

34 (propylene fumarate) was utilized to produce thin films and scaffolds possessing groups that can be m

35 al steps, the deposition temperatures of the thin films and the parameters of the photolithographic p

36 mperature of ternary polymer/fullerene blend thin films and their constituents, which can be resolved

37 oncept, these materials were fabricated into thin films and their specific binding ability was tested

38 reaking the symmetry of the structure of the thin film, and realize the deterministic magnetization s

39 of a bismuth-substituted yttrium iron garnet thin film, and visualizes the magnetic field and tempera

40 escence quantum yields in both solutions and thin films, and extensive supramolecular C-H...F interac

41 , the thick metal-oxide layer can serve as a thin-film antireflection coating, which increases light

42 substrate electrode, onto which Ni and Ni/Fe thin films are deposited.

43 d hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by u

44 BiOI thin films are grown by chemical vapor transport and fou

45 The thin films are grown without any support in free-standin

46 g showed that whereas both Cu(100) and (751) thin films are more active and selective for C-C couplin

47 s for interrogating and modifying perovskite thin films are needed.

48 rently, high-quality mixed-cation perovskite thin films are normally made by use of antisolvent proto

49 A membranes, degradation phenomena, and PFSA thin films are presented.

50 lecular processes of creep in metallic glass thin films are simulated at experimental timescales usin

51 While pyrochlore iridate thin films are theoretically predicted to possess a vari

52 by forming a highly organized, multilayered thin film around the axon fibers.

53 -dependent photocurrent in (Bi1-x Sb x )2Te3 thin films as a function of the incidence angle of the o

54 Artificial solids and thin films assembled from colloidal nanomaterials give r

55 earity about 0.45 cm(2)/GW in graphene oxide thin films at the telecommunication wavelength region, w

56 esign principles of a new class of microwave thin film bulk acoustic resonators with multiband resona

57 dress the surface transport properties of TI thin films by tuning the Fermi levels of both top and bo

58 n in methylammonium lead iodide (CH3NH3PbI3) thin films by ultrafast transient absorption microscopy,

59 Preparation of ZnSnxGe1-xN2 thin-films by reactive RF sputter deposition yield low-m

60 dual-wavelength fs laser-based dewetting of thin films can be an effective means for the scalable ma

61 midinium lead trihalide perovskite (FA-PVSK) thin films can be characterized using UV-vis spectroelec

62 sufficiently high frequencies, these porous thin-films can be directly immersed in highly ionizable

63 study we control the surface structure of Cu thin-film catalysts to probe the relationship between ac

64 ed by combining nanodiamonds (NDs) with ta-C thin films coated on Ti-coated Si-substrates.

65 ible thermoelectric copper selenide (Cu2 Se) thin film, consisting of earth-abundant elements, is rep

66 o the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a

67 system of a quantum anomalous Hall insulator thin film coupled with a superconductor.

68 we demonstrate periodic interlayer-mediated thin film crack propagation and discuss the governing co

69 We show strong confinement of thin film cracks and arbitrary steering of their propaga

70 k systems that exist in nature, not only for thin film cracks but also for cracks ranging in scale.

71 sses an application of titanium oxide (TiOx) thin films deposited using physical (reactive magnetron

72 ased on the use of ED-XRF spectrometry after thin film deposition on special sample retainers and a s

73 By using conformal oblique incidence thin film deposition onto an optical grating substrate,

74 e crystal structure of lead-free perovskite, thin film deposition, and device performance.

75 Recent research into thin-film deposition and etching techniques for mid-infr

76 ependent electronic functionalities based on thin-film design.

77 esented here, using Diffusive Equilibrium in Thin-film (DET) gels as high-spatial-resolution passive-

78 SPME passive samplers, including a retracted thin film device using a hydrophilic lipophilic balance

79 owever, these types of studies on perovskite thin-film devices are impeded by the morphological and c

80 sampling approach of diffusive gradients in thin-films (DGT) is developed here and demonstrated to p

81 hesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates.

82 rystalline, and glassy organic semiconductor thin films down to the sub-100 nm film thickness regime.

83 bstrate to deposit technologically important thin films (e.g. for superconducting and magnetic device

84 amics of Ni-only and mixed NiFe oxyhydroxide thin-film electrocatalysts.

85 novel microfabricated optically transparent thin-film electrode chip for fluorescence and absorption

86 A disposable thin-film electrode modified with a droplet of a gel-pol

87 from 10microM to 50nM] in comparison to ta-C thin film electrodes and (ii) the coating method signifi

88 rs are key materials for the next generation thin film electronic devices like field-effect transisto

89 c nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGa

90 The Cu2 Se thin film exhibits a power factor of 0.62 mW/(m K(2) ) a

91 Here we report H c2 data for epitaxial thin films extracted from the electrical resistance meas

92 ensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)2

93 dicate that PMMA passivated black phosphorus thin film flakes can stay pristine for a period of 19 da

94 laser pulse induces surface patterning of a thin film followed by nanoscale hydrodynamic instability

95 ctions of a 1:1 complex as a suspension or a thin film, followed by reduction, provided (1R,5R)-2-aza

96 Beyond aiding in the ease of processing of thin films for photovoltaic devices, there have been sug

97 and the nucleation and growth stages of the thin film formation is established.

98 imited due to practical issues of continuous thin film formation, stability, adhesion, and surface ro

99 ites is investigated in situ, revealing that thin-film formation is mediated by solid-state precursor

100 Thin film formats are used to study the Claisen-Schmidt

101 main-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures.

102 alyst, has been difficult in both powder and thin-film forms due to the disparity of reported synthes

103 cattering from standard and normal incidence thin-film geometries (tfPDF).

104 we provide a few examples to illustrate how thin-film growers in particular exploit quantum confinem

105 and quantify antiphase domains (APDs) in GaP thin films grown on different (001) Si substrates with d

106 rroelectricity observed in perovskite NaMnF3 thin films grown on SrTiO3.

107 ed in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystal

108 port properties of P-doped BaFe2As2 (Ba-122) thin films grown on technical substrates by pulsed laser

109 irection at the surfaces of bulk Fe1+yTe and thin films grown on the topological insulator Bi2Te3 is

110 ctions can be obstructed by the challenge in thin film growth.

111 lline high-temperature VPE halide perovskite thin film has been demonstrated-a unique platform on unv

112 into three-dimensional topological insulator thin films has recently led to the realisation of the qu

113 y devices based on MOF photonic crystals and thin films have been developed.

114 Silver nanowire (Ag-NW) thin films have emerged as a promising next-generation t

115 nd imaging but polycrystalline and amorphous thin films have shown inferior performance compared to i

116 est SBET of 1151 m(2) g(-1)) and crystalline thin films, having high chemical as well as thermal stab

117 In addition, none is suitable for thin-film heterostructure fabrication due to the re-mixi

118 with a suspended ferromagnetic/piezoelectric thin-film heterostructure.

119 ed on three tunable-focus fluidic lenses and thin-film holographic optical elements to perform automa

120 aller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposit

121 rough a state space framework, using Nylon 6 thin films in a humidity gradient as an experimental tes

122 g properties of atomic-layer-deposited Al2O3 thin films in Al/Al2O3/Al trilayers can recover after th

123 ct (SSE) measured for metallic ferromagnetic thin films in commonly used longitudinal configuration c

124 Exploiting multiferroic BiFeO3 thin films in spintronic devices requires deterministic

125 y measurements on an ultra-thin (001) BiFeO3 thin film, in combination with phase-field simulations,

126 n-induced spontaneous partitioning of PbTiO3 thin films into nearly energetically degenerate, hierarc

127 The thin film is fabricated by a low-cost and scalable spin

128 We found that such Mg thin film is hexacoordinated Mg compounds by in-situ STX

129 he domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface

130 sly reported T c enhancement in FeSe0.5Te0.5 thin films is caused by a remarkable increase of Se cont

131 onic structure evolution of SrFeOx epitaxial thin films is identified in real-time, during the progre

132 xyl)-carbonyl]-thieno[3,4-b]thiophenediyl]]) thin films is investigated by in situ grazing incidence

133 ion mechanism in p-type cuprous oxide (Cu2O) thin films is performed based on analysis of the relativ

134 y and moderately doped organic semiconductor thin films is presented.

135 ransparent electrodes, the use of multilayer thin-films is steadily increasing throughout high-tech i

136 in-plane lattice parameters, c/a) in BiMnO3 thin films, lightly doped to optimize lattice dimensions

137 oupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing

138 ontrol the properties of FeRh in the extreme thin film limit (tFeRh < 10 nm) where interfaces are cru

139 nic generation over many coherent lengths in thin film lithium niobate waveguides patterned with the

140 btained from other solution processed Cu2 Se thin films (<0.1 mW/(m K(2) )) and among the highest val

141 rovskites bears close resemblance to that of thin films, making them a good benchmark for structural

142 d synthetic leaf made of graphene oxide (GO) thin film material, which exhibited broadband light abso

143 and heat localization by carbon-based porous thin film materials holds great promise for sustainable,

144 for a new class of low-loss, magnetoelastic thin film materials that are promising for spin-mechanic

145 ty and expands the processing parameters for thin film materials without significantly altering their

146 te-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated.

147 Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effect

148 ha,omega-dihexylquaterthiophene (DH-4T), and thin-film microstructural analysis demonstrates the fund

149 ontrollable method for the synthesis of mMOF thin films (modified electrodes) consisting of hollow th

150 al for understanding and optimization of the thin-film morphology and charge-transport properties of

151 for the first time, it is revealed that the thin-film morphology of a conjugated polymer inherits th

152 ies typical of nanoparticles, nanowires, and thin films, nanolattices redefine the limits of the acce

153 The radio frequency sputtered nickel oxide thin film nanostrtablucture deposited on glass substrate

154 e director-encoded chiral shape actuation in thin-film nematic polymer networks under external stimul

155 We study a vortex chain in a thin film of a topological insulator with proximity-indu

156 the visual detection of CN(-) by preparing a thin film of CoOxH-GO on a positively charged and porous

157 conductive-atomic force microscope tip on a thin film of molybdenum disulfide (MoS2).

158 Trilayer thin films of 90 nm Fe - 20 at.% Cr (1(st) layer)/100 nm

159 Thin films of a composite of nafion and carbon micropart

160 sed laser deposition and characterization of thin films of a representative pyrochlore compound Bi2Ir

161 Specifically, thin films of actin filaments are assembled at an oil-wa

162 Mesoporous thin films of anatase TiO2 or SnO2/TiO2 core-shell nanop

163 electric sensors were previously coated with thin films of bacterial cellulose nanocrystals (CN) to p

164 ork paves the way towards the fabrication of thin films of chiral magnets that host certain spin whir

165 try) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTiO3 By opticall

166 ift upon application of an electric field in thin films of doped P3HT over surprisingly large distanc

167 highly controlled model system consisting of thin films of ligand-capped ZrO2 nanocrystals.

168 idence wide-angle X-ray scattering (GIWAXS), thin films of PF2,5 and PF2,6 exhibited a higher degree

169 ctively suppress the dewetting of underlying thin films of small organic semiconductor molecule, poly

170 tural and electrical properties in epitaxial thin films of SrFeO3-delta (SFO), where SFO is a compoun

171 Here we study epitaxial thin films of SrNbO3+delta and find that their bandgaps

172 Electrochemical studies on solid-state thin films of the macrocycle show that they exhibit semi

173 These have been studied extensively in thin films of thicknesses up to around 200 nanometres, i

174 of the spin state is achieved for nanometer thin films of this complex in two distinct ways: through

175 This biosensor was based on thin films of Zinc Oxide (ZnO) deposited by atomic layer

176 the lithiation kinetics in epitaxial Fe3 O4 thin film on a Nb-doped SrTiO3 substrate is investigated

177 y potentiodynamic electropolymerization as a thin film on an Au film electrode in an electrochemical

178 entimeter-scaled single-crystalline LiFe5 O8 thin film on polyimide substrate.

179 are solution-processable, can be produced as thin films on electrodes by oxidative polymerizations, a

180 MnAs epitaxial thin films on GaAs(001) single crystalline substrates cr

181 e, we report physical vapor deposition of Cu thin films on large-format ( approximately 6 cm(2)) sing

182 of the superior crystallinity of perovskite thin films on NiO.

183 GaP thin films on Si (001) and (112) grown by MOCVD are bond

184 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafers has been achieved over

185 ons which are too small to observe as either thin films on solid electrodes or within intact molecula

186 rication of single crystal gallium phosphide thin films on transparent glass substrates via transfer

187 Here we calculate PTIR spectra via thin-film optics, to identify subtle changes (band shift

188 le as components of active layers in various thin-film optoelectronic devices.

189 esis of appropriate materials in the form of thin films ordering well above room temperature.

190 escribed technology effectively integrates a thin-film organic electrochemical transistor (sensing co

191 providing a new synthesis route to brookite thin films, our results take a step towards resolving th

192 properties that can be broadly applied as a thin film over large areas.

193 Thin film oxide materials often require thermal treatmen

194 ple commercial inkjet printer to fabricate a thin-film paper-based biophotovoltaic cell consisting of

195 Thin-film passivation with iodide salts is shown to enha

196 ave enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding s

197 of metastability characteristics of leading thin-film photovoltaic technologies.

198 a)Se2 (CIGS) is presently the most efficient thin-film photovoltaic technology with efficiencies exce

199 are able to extend to applications of other thin film photovoltaics and semiconductor devices.

200 ions in designing high performance, flexible thin film photovoltaics for the realization of building-

201 wed a very smooth surface mainly composed of thin-film polycrystalline Pt, with some apparent nanosca

202 Thin-film polydimethylsiloxane (PDMS) passive samplers w

203 the dynamical differences between a bulk and thin film polymeric glass former can be understood by di

204 hes, Wenger et al. show that polycrystalline thin films possess similar optoelectronic properties to

205 the growth of high-fraction ( 95%) brookite thin films prepared by annealing amorphous titania precu

206 d for studying electrode modifications, like thin films prepared by atomic layer deposition (ALD), th

207 ecame uniform from 2-12 wk, whereas flexible thin-film probes yield a marked accumulation of astrocyt

208 as well as studies of conventional flexible thin-film probes.

209 UPS characterization of the same FA-PVSK thin films provide complementary near-surface measuremen

210 etween a resonant metasurface and a metallic thin-film reflector.

211 y probed in ferroelectric nanocapacitors and thin films, respectively.

212 Additionally, studies using a thin-film rotating disc electrode, identical location tr

213 vestigation of the transition in planar FeRh thin-film samples by combining differential phase contra

214 erminated probe ssDNA was immobilized on the thin film sensing area through chemical functionalizatio

215 e, we describe the development of a flexible thin-film sensor for label free gene expression analysis

216 emble an alcohol-sensing device comprising a thin-film sensor made of graphene nanosheets (GNs) and b

217 ned planar optode-DGT (diffusive gradient in thin-films) sensor we obtained simultaneous measurements

218 inescent MOF and MOF-based photonic crystals/thin film sensory materials.

219 Here we show that palladium-capped hafnium thin films show a highly reproducible change in optical

220 The iridate thin films show a variety of intriguing transport charac

221 Additionally, the fabricated thin film shows great promise to be integrated with the

222 n and reflection modes based on conventional thin film silicon processes that are suitable for the la

223 lective properties of tailored Co3O4/Co(OH)2 thin films simultaneously provide high activity for wate

224 promise for application in low-cost silicon thin film solar cells.

225 th weakened backward scattering in plasmonic thin film solar cells.

226 ck delaying the further commercialization of thin-film solar cells based on hybrid organohalide lead

227 has been propelled by modern applications in thin-film solar cells, transistors and optical sensors.

228 white light generation, water-splitting, or thin-film solar cells, where increased response in areas

229 id radial-junction ZnO nanowire/a-Si:H p-i-n thin-film solar cells.

230 oader than the corresponding polycrystalline thin-film solar cells.

231 vide a new avenue in low cost fabrication of thin-film solar-cells.

232 weighted average (TWA) passive sampling with thin film solid phase microextraction (TF-SPME) and liqu

233 cterization techniques available for bulk or thin-film solid-state materials have been extended to su

234 on magnetoelectric effect in single crystal/thin film specimens.

235 Half-cell galvanostatic testing of 3 microm thin films spin-coated on amorphous silicon validates it

236 The FB mode is formed within a double layer, thin-film stack where at subwavelength thicknesses the s

237 While direct measurement of EC thin-films still remains challenging, a generic theoreti

238 Using a polycrystalline gold thin film subjected to heating, we show how gBCDI resolv

239 en realize epitaxial (SrFeO2.5)1/(CaFeO2.5)1 thin film superlattices possessing both anion-vacancy or

240 Novel techniques of MIP deposition as thin films, surface development, and introduction of add

241 ion on a single glass substrate of different thin film technologies in order to develop a multifuncti

242 o wafer-scale fabrication using conventional thin film technologies.

243 (IDEs) that have been fabricated by means of thin-film technologies.

244 improved via different approaches including thin film technology and the recently developed minimum

245 Despite the advanced stage of diamond thin-film technology, with applications ranging from sup

246 rocessing and thermal annealing to produce a thin film that achieves a figure of merit, ZT, which is

247 ygen content on the properties of perovskite thin films that are not composed of cations with multipl

248 a new class of electronically reconfigurable thin films that have the ability to reversibly change op

249 tructure has emerged as a promising flexible thin film thermoelectric material.

250 less structural disorder relative to organic thin films, thus reducing momentum scattering.

251 und that allowed product deposition from the thin film to occur continuously as the reaction mixture

252 helium, ultracold atoms and superconducting thin films to ensembles of spins.

253 senses the chemo-optical response of Pd/WO3 thin films to the H2 produced.

254 h a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices.

255 integrating it with a commercially available thin-film-transistor array.

256 igh performance integrated circuits based on thin film transistors (TFTs) is of interest for the deve

257 sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-

258 The mobility of organic thin-film transistors (OTFTs) comprising anti TES ADT dr

259 p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated int

260 were processed as semiconductors in organic thin-film transistors (TFTs) that show ambipolar behavio

261 ereafter, recent demonstrations of MHP-based thin-film transistors and their application in logic cir

262 nt study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-

263 Thin-film transistors were fabricated using environmenta

264 nd biocompatible semiconducting polymers for thin-film transistors.

265 indium gallium oxide gel-derived powders and thin films using infrared vibrational spectroscopy, X-ra

266 Fabrication of epitaxial FeSexTe1-x thin films using pulsed laser deposition (PLD) enables i

267 al using high-resolution e-beam lithography, thin film vacuum deposition and reactive-ion etching pro

268 of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-gu

269 of mesoporous metal-organic framework (mMOF) thin films via the electrochemically assisted self-assem

270 The Mg thin film was not dissolvable during the following disch

271 ere that by using functionalized NDs on ta-C thin films we can significantly improve sensitivity towa

272 Ws associated with AF/FM coexistence in FeRh thin films we must fully understand the magnetostructura

273 ere using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of t

274 Here, using a YBa2Cu3O7-delta (YBCO) thin film, we demonstrate that RXR is further capable to

275 Although our FeSexTe1-x thin films were fabricated via PLD using a Fe0.94Se0.45T

276 ptical and structural properties of the TiOx thin films were investigated and discussed.

277 helium ion irradiation on free-standing iron thin films were performed at 573 K.

278 ction with sputter-coated Al-doped ZnO (AZO) thin films were used as a composite transparent top elec

279 olled doping profile, and solution-processed thin films where the non-uniform doping profile is unint

280 ed devices of bulk-insulating Bi2-x Sb x Te3 thin films, where the field-induced anisotropy presents

281 a perpendicular strain field exists in these thin films which results in an increase in the phase tra

282 A prominent instance is the Tp-Bpy thin film, which displays an unprecedented acetonitrile

283 netization oscillations of the ferromagnetic thin film, which results in the radiation of electromagn

284 etectors are mainly based on polycrystalline thin films, which have some undesired properties such as

285 phase stability and reversibility of SrFeOx thin films, which is highly relevant for energy and envi

286 show that, by decorating the as-formed Ag-NW thin film with a dense, hydrophobic dodecanethiol layer,

287 Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attentio

288 The results show that a dense robust silicon thin film with embedded junction formation can be produc

289 entally on evaporated organic small-molecule thin films with a controlled doping profile, and solutio

290 perties of 71 degrees domain walls on BiFeO3 thin films with a nanoscale resolution.

291 tically soft epitaxial spinel NiZnAl-ferrite thin films with an unusually low Gilbert damping paramet

292 ms of broad-band reflectance results in very thin films with exceptional whiteness.

293 rty of high dielectric constant (high-kappa) thin films with far reaching implications.

294 Multi-layered thin films with heterogeneous mechanical properties can

295 exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition ac

296 to triangular lattices in tunable colloidal thin films with single-particle dynamics by video micros

297 tuning process that is key to obtaining MOCP thin films with superior properties.

298 associated with the solution-growth of MOCP thin films with targeted compositions.

299 The wide bandgap MgZnO thin films with various Mg mole fractions were grown on

300 al and magnetic properties of single crystal thin-film YIG where the temperature dependence of the ma