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1 nductive inorganic materials (such as indium tin oxide).
2  comparable to those fabricated using indium tin oxide.
3 d on chips coated with either gold or indium-tin oxide.
4 d yield become close to devices using indium tin oxide.
5 rresponding parameters for commercial indium-tin oxide.
6 ce > 70%) that are rivalling those of indium-tin oxide.
7 sordered monolayers consisting of alkyls and tin oxide.
8 ast a similar workfunction to that of Indium Tin Oxide.
9 onductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes.
10 ate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS)
11 z, and to conductor supports, such as indium tin oxide, aluminum, highly ordered pyrolytic graphite,
12 omposite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a lo
13 ent conducting oxides (TCOs), such as indium tin oxide and zinc oxide, play an important role as elec
14  by drop-casting 1a in DCM on fluorine-doped tin oxide, and the ECL of the 1a film was found in phosp
15                      A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohm
16 0) cm(-2) at the interface between an indium tin oxide anode and the common small molecule organic se
17 n other transparent materials such as indium tin oxide ( approximately 80%) and ultrathin metals ( ap
18 considered a promising alternative to indium tin oxide as transparent conductors.
19 ade from graphene (at the bottom) and indium tin oxide (at the top) for dielectrophoretic cell trappi
20 ilized the metal particles on antimony-doped tin oxide (ATO) in sustained lower Ir oxidation states (
21                                         Five tin oxide-based Taguchi Gas Sensors were applied in the
22                            We present indium-tin-oxide-based photocurrent measurements that reveal a
23  of naphthalenediimides were grown on indium tin oxide by ring-opening disulfide-exchange polymerizat
24                        We report that indium tin oxide can acquire an ultrafast and large intensity-d
25 mit of transparent conductors such as indium tin oxide, carbon-nanotube films, and doped graphene mat
26 ical cell comprising an fcc3-modified indium tin oxide cathode linked to a cobalt phosphate-modified
27 = 8 to 50 nm) to amine-functionalized indium-tin oxide coated glass electrodes (Glass/ITO), obtaining
28  electrophoretically deposited on the indium tin oxide coated glass substrate at a low DC potential.T
29  made from polydimethylsiloxane on an indium-tin oxide coated microscope slide.
30 elluride quantum dots (CdTe-QDs) onto indium-tin-oxide coated glass substrate.
31 n external potential to a transparent indium tin oxide-coated electrode (the substrate), which enable
32 sting of a platinum catalyst layer on indium-tin oxide-coated glass by the application of two differe
33 er Au nanoparticles (NPs) attached to indium tin oxide-coated glass electrodes in Br(-) and Cl(-) sol
34 ids generated by photochemistry at an indium tin oxide-coated substrate.
35 two electrodes and were fabricated on indium tin oxide-coated substrates (e.g., polyester) simply by
36 solar cells grown directly on fluorine-doped tin oxide-coated substrates without using any hole-block
37 tabilized Au nanoparticles (NPs) onto indium-tin-oxide-coated glass (glass/ITO) electrodes as studied
38 tal oxide film--indium tin oxide or antimony tin oxide--coated with a thin outer shell of TiO2 formed
39 th sputtered intrinsic zinc oxide and indium tin oxide contacts.
40 d that the increased conductivity allows the tin oxide conversion and alloying reactions to both be r
41                                        Since tin oxides dissolve at low pH values, acidic conditions
42 -aminopropyl-triethoxysilane modified indium tin oxide electrode (ITO/APTES/GO/HSA) has been develope
43 he oxidative polarization of an inert indium tin oxide electrode in phosphate-buffered water containi
44                  Each microfabricated indium tin oxide electrode is located in a separate microfluidi
45 tailor-made hierarchically structured indium-tin oxide electrode that gives rise to the excellent int
46  cell, utilizes a transparent fluorine doped tin oxide electrode to sense O2.
47 oparticles (NPs) at the surface of an indium tin oxide electrode.
48 es onto a gold-nanoparticle-patterned indium tin oxide electrode.
49 ectrodeposition protocol on activated indium-tin oxide electrodes (ITO), producing conformal films th
50 rast, P450 BM3 adsorbed on unmodified indium tin oxide electrodes revealed 36% activity by electrode
51                              Gold and indium tin oxide electrodes were characterized with respect to
52                                       Indium tin oxide electrodes were modified with DNA, and the gua
53 ese PCR fragments were immobilized to indium tin oxide electrodes, and oxidation of guanine in the fr
54 coated films of lipids on transparent indium tin oxide electrodes, we formed two-dimensional networks
55 matic assemblies on transparent indium-doped tin oxide electrodes, which are of interest in organic e
56  no catalysis was observed on fluoride-doped tin-oxide electrodes.
57 shown to be diminished by the formation of a tin oxide film on the surface of the mercury-rich gamma
58 he conducted experiments with a 10 nm indium tin oxide film, having plasmonic resonance in the 1500 n
59 been explained by the formation of a barrier tin oxide film, which dissolved only at the lowest pH.
60                             Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttri
61  graphene is much higher than that of indium tin oxide films, especially at large incident angles.
62 sembled on a polyethylene naphthalate-indium tin oxide flexible substrate with a PCE of 3.12% is demo
63 tion of pyrene pyrrole onto a fluorine-doped tin oxide (FTO) electrode allowed the targeted orientati
64 tic water oxidation occurs at fluoride-doped tin oxide (FTO) electrodes that have been surface-modifi
65     In this study, we prepare fluorine doped tin oxide (FTO) films by chemical vapor deposition with
66 ne/gold nanoparticles (AuNPs)/fluorine doped tin oxide (FTO) glass electrode.
67 alladium (ZnO/Pt-Pd) modified fluorine doped tin oxide (FTO) glass plate was fabricated for detection
68 lms on transparent conductive fluorine-doped tin oxide (FTO) substrates.
69 on a glass slide covered with fluorine-doped tin oxide (FTO), which acts as a biosensor.
70  (rGO) nanocomposite modified fluorine doped tin oxide (FTO).
71 Illumination of the resulting fluorine-doped tin oxide (FTO)|SnO2/TiO2|-[Ru(a) (II)-Ru(b) (II)-OH2](4
72 rys zeo were deposited on the Fluorine doped tin oxide glass electrode (FTO) by drop-casting method f
73 ctrode is shown to perform as well as indium-tin oxide glass.
74 electrophoretically deposited onto an indium-tin-oxide glass substrate and used for immobilization of
75  material on various surfaces (glass, indium tin oxide, gold) was evaluated with the tape peel-off me
76                       Alternatives to indium tin oxide have recently been reported and include conduc
77 graphene electrodes has out-performed indium tin oxide in power conversion efficiency (PCE).
78 ance comparable to that of commercial indium tin oxide in the visible spectrum, but far superior tran
79 izing anti-E. coli antibodies onto an indium-tin oxide interdigitated array (IDA) microelectrode.
80                                In all cases, tin oxide is codeposited in submonolayer amounts.
81 erest as an anode material to replace indium tin oxide, is calculated to be a two-dimensional-like me
82 he electron injection barrier between indium tin oxide (ITO) and C70 by 0.67 eV.
83 fabricated from these complexes using indium tin oxide (ITO) and gold contacts appears to be dominate
84 ted by a self-alignment of conducting Indium Tin Oxide (ITO) and rGO layer without etching of the rGO
85 iency solar cells, on semitransparent indium tin oxide (ITO) and titanium dioxide (TiO2) electrodes.
86          The technique is tested with Indium Tin Oxide (ITO) and with poly(3-hexylthiophene) (P3HT) n
87 ional conducting-polymer layer at the indium-tin oxide (ITO) anode.
88                            Indium and indium tin oxide (ITO) are extensively used in electronic techn
89 y, slides coated with a thin layer of indium tin oxide (ITO) are the standard substrate for protein i
90                 Silver (Ag) metal and indium tin oxide (ITO) are used for the fabrication of the SPR
91 d enzyme coated NPs were deposited on indium tin oxide (ITO) coated flexible polyethylene terephthala
92 s) deposited electrophoretically onto indium tin oxide (ITO) coated glass electrode and have been uti
93     HeLa cells were grown directly on indium tin oxide (ITO) coated glass slides.
94  of NiO nanoparticles deposited on an indium tin oxide (ITO) coated glass substrate serves as an effi
95 n electropolymerisation process on an indium-tin oxide (ITO) coated glass substrate.
96 um selenide quantum dots (QCdSe) onto indium-tin oxide (ITO) coated glass substrate.
97  same Au nanoparticle (AuNP)-modified indium tin oxide (ITO) coated glass surfaces.
98 e (GOx) was immobilized on a modified indium tin oxide (ITO) coated polyethylene terephthalate (PET)
99 ode show superior efficiency to their indium tin oxide (ITO) counterparts because of improved photon
100                   The electrodes were indium tin oxide (ITO) covered with a thin layer of poly(3,4-et
101 an optically transparent thin film of indium-tin oxide (ITO) covering the exterior is described.
102 hick) were formed on quartz glass and indium tin oxide (ITO) directly from Nafion-[Ru(bpy)3]2+ Langmu
103 occus elongatus , on a nanostructured indium tin oxide (ITO) electrode and to covalently immobilize P
104 The distribution of current across an indium tin oxide (ITO) electrode can be altered by varying the
105  of affinity-purified antibodies onto indium tin oxide (ITO) electrode chips.
106 gold nanoparticle (AuNP) arrays on an indium tin oxide (ITO) electrode using efficient and low-cost m
107  supported Ru(bda) catalyst on porous indium tin oxide (ITO) electrode.
108  of single redox events on a modified indium-tin oxide (ITO) electrode.
109 of PVDF nanowires-PDMS composite film/indium tin oxide (ITO) electrode/polarized PVDF film/ITO electr
110 this paper we describe fabrication of indium-tin oxide (ITO) electrodes and the design of a ligand th
111 ensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H2-generating abili
112 was studied at glassy carbon (GC) and indium-tin oxide (ITO) electrodes modified by gold nanoparticle
113                     Immobilization on indium tin oxide (ITO) electrodes of 330- and 1200-base pair (b
114 icrochip device that uses transparent indium tin oxide (ITO) electrodes to measure quantal exocytosis
115 consists of nanostructured silver and indium tin oxide (ITO) electrodes which are separated by 5 nm t
116 otube (SWCNT) forests were printed on indium tin oxide (ITO) electrodes.
117 ymeric films on optically transparent indium tin oxide (ITO) electrodes.
118 ference devices using polycrystalline indium tin oxide (ITO) electrodes.
119 ssy Mode Resonances generated by thin indium tin oxide (ITO) films fabricated onto the planar region
120 d zinc-oxide-based semiconductors and indium tin oxide (ITO) gate electrodes.
121  a plano-convex PVC gel micro-lens on Indium Tin Oxide (ITO) glass, confined with an annular electrod
122 ly(aniline) (PANI) films deposited on indium-tin oxide (ITO) have been investigated using electrochem
123 This control is achieved by embedding indium tin oxide (ITO) into these cavities.
124                               Whereas indium tin oxide (ITO) is a well-known transparent conductive o
125 e and limited resources of indium for indium tin oxide (ITO) materials currently applied in most of t
126                    Monodisperse 11 nm indium tin oxide (ITO) nanocrystals (NCs) were synthesized by t
127                   We first synthesize indium tin oxide (ITO) nanocrystals directly on functionalized
128                                       Indium tin oxide (ITO) nanoparticles were spray-coated on trans
129 t stripping of lead and cadmium on an indium tin oxide (ITO) optically transparent electrode (OTE) we
130 enuated total reflectance at an indium-doped tin oxide (ITO) optically transparent electrode coated w
131 ymer (MIP-FU) films were deposited on indium-tin oxide (ITO) or Au film-coated glass slides, Pt disk
132 ent is demonstrated by various shaped indium tin oxide (ITO) patterns.
133                                       Indium tin oxide (ITO) reacts with tetra(tert-butoxy)tin to giv
134                              Using an indium tin oxide (ITO) sensor platform with a 50 nm Nafion film
135  and disposable immunosensor based on indium-tin oxide (ITO) sheets modified with gold nanoparticles
136 ide (Fe3O4) nanodots fabricated on an indium tin oxide (ITO) substrate via a block copolymer template
137 yt c photo-cross-linked onto an indium-doped tin oxide (ITO) substrate was 8.4 +/- 0.2 s-1, on the sa
138  lightmode spectroscopy (OWLS) and an indium tin oxide (ITO) substrate, we show that asymptotic kinet
139 njugated organic semiconductor on the indium tin oxide (ITO) surface followed by doping with a strong
140 hrome c directly immobilized onto the indium tin oxide (ITO) surface, we measured a reaction rate con
141             Bi NPs were fabricated on indium tin oxide (ITO) surfaces from a bismuth trichloride solu
142 d self-assembled monolayers (SAMs) on indium tin oxide (ITO) surfaces.
143 e was over-coated with a thin film of indium tin oxide (ITO) that served as an optically transparent
144 controlled potential coulometry in an indium tin oxide (ITO) thin-layer electrochemical cell.
145    An optically transparent patterned indium tin oxide (ITO) three-electrode sensor integrated with a
146                                    An indium tin oxide (ITO) transparent electrical heater is pattern
147  is more electrochemically inert than indium tin oxide (ITO) where ITO undergoes reduction-oxidation
148        We demonstrate Mn CSV using an indium tin oxide (ITO) working electrode both bare and coated w
149 was covalently bound to a transparent indium-tin oxide (ITO) working electrode, which also served as
150 ted by a 20-nm-thick metallic film of indium tin oxide (ITO), a plasmonic material serving as a low-c
151 t, PC-12 cells interacted poorly with indium tin oxide (ITO), poly(L-lactic acid) (PLA), and poly(lac
152 he most common transparent conductor, indium tin oxide (ITO), with a material that gives comparable p
153                   Nanoporous films of indium tin oxide (ITO), with thicknesses ranging from 250 nm to
154                             Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were
155 utral morpholino capture probes on an indium tin oxide (ITO)-coated glass slide.
156 position of the Co-Pi catalyst on the Indium Tin Oxide (ITO)-passivated p-side of a np-Si junction en
157 d self-assembled monolayers (SAMs) on indium tin oxide (ITO).
158  being considered as replacements for indium tin oxide (ITO).
159  coupled with a nanoscale transducer, indium tin oxide (ITO).
160 The working electrode was composed of indium tin oxide (ITO); the quasi-reference and auxiliary elect
161        For this purpose, we integrate indium-tin-oxide (ITO) as a tunable electro-optical material in
162 oparticles (Au NPs) attached to glass/indium-tin-oxide (ITO) electrodes as a function of particle siz
163 rolactone (PCL) electrospun fibers on indium-tin-oxide (ITO) glass provide a sufficient surface to re
164                         A transparent indium-tin-oxide (ITO) nanolens was designed to focus the incid
165 as coupled to an optically absorptive indium-tin-oxide (ITO) substrate can generate >micrometre per s
166  electrophoretically deposited on the indium-tin-oxide (ITO) substrate.
167 ing of TPDSi(2) to PLED anodes (e.g., indium tin oxide, ITO) and its self-cross-linking enable fabric
168 uttered both intrinsic zinc oxide and indium tin oxide layers.
169 nechococcus elongatus on a mesoporous indium-tin oxide (mesoITO) electrode.
170 ptoelectronic properties of colloidal indium tin oxide nanocrystals is reported.
171                            High surface area tin oxide nanocrystals prepared by a facile hydrothermal
172 of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to prepare b
173                     A silver nanowire-indium tin oxide nanoparticle composite and its successful appl
174 tion from an individual semiconductor indium tin oxide nanoparticle is significantly enhanced when co
175  near field localized at its gap; the indium tin oxide nanoparticle located at the plasmonic dimer ga
176                   Chemically modified indium tin oxide nanoparticle modified electrodes were used to
177  10(6)-fold compared with an isolated indium tin oxide nanoparticle, with an effective third-order su
178 ub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband,
179                                              Tin oxide nanorods (NRs) are vapour synthesised at relat
180 r cells have a p-i-n structure (glass/indium tin oxide/NiO(x)/perovskite/ZnO/Al), in which the ZnO la
181            The sensor consisted of an indium tin oxide optically transparent electrode (ITO OTE) coat
182 tenuation of light passing through an indium tin oxide optically transparent electrode (ITO-OTE) acco
183 ace area conductive metal oxide film--indium tin oxide or antimony tin oxide--coated with a thin oute
184 ing SiO(x) as the active material and indium tin oxide or graphene as the electrodes.
185 l oxides, the most common of which is indium tin oxide, or ITO.
186 ype sensing platform consisting of an indium tin oxide OTE coated with a cation-selective, sol-gel-de
187 hannel integration is the use of gold/indium-tin oxide patterned electrode directly on a porous polym
188 ovskite solar-cell devices made on an indium tin oxide/poly(ethylene terephthalate) substrate via a l
189 conductive transparent electrodes for indium tin oxide replacement, e.g. in light-emitting diodes, or
190          Here we describe the application of tin oxide (SnO(2)) nanowires as an effective treatment a
191                            The importance of tin oxide (SnO(x)) to the efficiency of CO(2) reduction
192                         In this work, we use tin oxide, SnO2, as a representative anode material to e
193                                      Sol-gel tin oxide spin-coated on the thermally patterned arrays
194 Spiro-OMeTAD/Au, where FTO is fluorine-doped tin oxide, sTiO2 indicates solid-TiO2, and mpTiO2 is mes
195 In arrays of gold nanoparticles on an indium tin oxide substrate and arrays of 100-nanometer-diameter
196 l shaped of Mn3O4-Cn nanocomposite on indium tin oxide substrate.
197 itions onto conducting glass, fluorine-doped tin oxide substrate.
198 u nanoparticles (Au NPs) deposited on indium tin oxide substrates was investigated.
199  of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion effici
200  solvothermally on conductive fluorine-doped tin oxide substrates.
201                    This effect arises from a tin oxide surface layer that encapsulates small Pd-rich
202 ieve this first requires showing that indium tin oxide surfaces can be used for SMLM, then that these
203 to glassy carbon, gold, platinum, and indium tin oxide surfaces.
204 rs to enolate acceptors on conductive indium tin oxide surfaces.
205             When anchored to nanoITO (indium tin oxide), the ruthenium chromophore-catalyst assembly
206                         Thin films of indium tin oxide-the prototypical transparent electrode materia
207 lue spot electrodeposited on an indium-doped tin oxide thin film as the electrochromic indicator.
208 ast to what was observed for an indium-doped tin oxide thin film coated on quartz.
209 s indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron d
210 ectrode based on transparent layer of indium tin oxide was electrochemically modified with a layer of
211 ct a cell, voltage was applied to the indium-tin oxide while simultaneously applying vacuum at the di
212 tner (putidaredoxin) using an antimony-doped tin oxide working electrode.
213 presentative organic semiconductors and zinc-tin-oxide (Zn-Sn-O) as a representative inorganic semico
214 obility, 28.0 cm2 V(-1) s(-1), was from zinc tin oxide (ZTO), with an on/off ratio of 2 x 10(4).

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