ライフサイエンスコーパス: ultrahigh vacuum

1 111) homoepitaxial growth and ion erosion in ultrahigh vacuum.

2 njugated covalent networks on surfaces under ultrahigh vacuum.

3 n etching of epitaxial graphene/SiC(0001) in ultrahigh vacuum.

4 on of monolayers from the gas phase under an ultrahigh vacuum.

5 ted Pt(n)(+) (n </= 11) on GCE substrates in ultrahigh vacuum.

6 ng epitaxial graphene using atomic oxygen in ultrahigh vacuum.

7 grow on SiC crystals at high temperatures in ultrahigh vacuum.

8 a film formed on a Mo(100) single crystal in ultrahigh vacuum.

9 h vapor deposition onto graphite surfaces in ultrahigh vacuum.

10 amorphous, polycrystalline or exist only in ultrahigh vacuum.

11 tless X-ray photoelectron spectroscopy under ultrahigh vacuum.

12 ature-programmed desorption (TPD) both under ultrahigh vacuum and in situ from liquid solutions.

13 ion at the nano/atomic scale from ambient to ultrahigh-vacuum and electrochemical environments.

14 by X-ray photoelectron spectroscopy (XPS) in ultrahigh vacuum at room temperature.

15 roximately 1 muC.cm(-2), and is preserved in ultrahigh vacuum, but disappears upon heating to 100 deg

16 epitaxial monolayer graphene was studied in ultrahigh vacuum by low-temperature scanning tunneling m

17 iation of surface phenoxides was measured in ultrahigh vacuum by X-ray photoelectron spectroscopy, as

18 e interferometer near a spherical mass in an ultrahigh-vacuum chamber, we reduced the screening mecha

19 dgap dielectric crystals, investigated under ultrahigh vacuum conditions at room temperature, is revi

20 in few A to 5 nm gap sizes, performed under ultrahigh vacuum conditions between a Au-coated probe fe

21 erface, which can be retrieved neither under ultrahigh vacuum conditions nor from interfaces immersed

22 he (111) surfaces of copper and silver under ultrahigh vacuum conditions were studied by scanning tun

23 an azide can be performed under solvent-free ultrahigh vacuum conditions with reactants adsorbed on a

24 d by using a collimated molecular beam under ultrahigh vacuum conditions.

25 ingle-layer graphene crystals examined under ultrahigh vacuum conditions.

26 Performing TERS under ultrahigh-vacuum conditions allows pristine and atomical

27 electron density when imaged with STM under ultrahigh-vacuum conditions at 77 K.

28 Under ultrahigh-vacuum conditions, physical vapor deposition a

29 t is, deep within water's "no man's land" in ultrahigh-vacuum conditions.

30 s (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions.

31 ligomers directly on a Ag(111) support under ultrahigh-vacuum conditions.

32 is used to image these species at 77 K under ultrahigh-vacuum conditions.

33 y incompatibility of the liquid samples with ultrahigh vacuum environment of the electron optics and

34 rves cell morphology, allows analysis in the ultrahigh vacuum environment, and reduces topographic ar

35 in derivatives (2H-TPCN) with Co atoms in an ultrahigh vacuum environment.

36 ponents self-assembly on solid surface in an ultrahigh vacuum environment.

37 work on size-selected supported clusters in ultrahigh-vacuum environments and under realistic reacti

38 ften ignored in theoretical and even in some ultrahigh vacuum experimental studies.

39 he PdO(101) surface as determined from model ultrahigh vacuum experiments and theoretical calculation

40 A lead nanocrystal was crystallized in ultrahigh vacuum from a droplet on a silica substrate an

41 Analytic results and experiments in ultrahigh vacuum indicate that the static friction betwe

42 ever the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rat

43 Surface Raman spectroscopy in ultrahigh vacuum is used to interrogate interfaces forme

44 ced by a controlled temperature annealing in ultrahigh vacuum, is presented.

45 tering, even though the instrument was under ultrahigh vacuum (<5 x 10(-7) Pa).

46 nd electrical properties analyzed in situ by ultrahigh-vacuum, multiple mode atomic force microscopy

47 of submonolayer quantities of corannulene in ultrahigh vacuum onto thick Cs films, deposited at 100 K

48 In this manner, ultrahigh-vacuum oxidation overcomes the limitations of

49 d to density functional theory, showing that ultrahigh-vacuum oxidization results in uniform epoxy fu

50 d to ionize neutral organic molecules in the ultrahigh-vacuum region of a Fourier transform ion cyclo

51 Annealing in ultrahigh vacuum revealed a thermal stability limit of a

52 Using an ultrahigh vacuum scanning tunneling microscope (STM), we

53 is induced and investigated using cryogenic ultrahigh vacuum scanning tunneling microscopy (STM).

54 face and investigated using room temperature ultrahigh vacuum scanning tunneling microscopy.

55 semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy.

56 An ultrahigh-vacuum scanning tunneling microscope was used

57 ce of gold was discovered with the use of an ultrahigh-vacuum scanning tunneling microscope.

58 density functional theory calculations in an ultrahigh vacuum setting show that, with the oxide coati

59 t preparation by infrared laser pumping, and ultrahigh vacuum surface analysis techniques make it pos

60 While ultrahigh vacuum surface science techniques have provide

61 aces that are not accessible in conventional ultrahigh-vacuum surface-science experiments.

62 ayers of quality similar to that obtained by ultrahigh vacuum techniques at elevated temperature.

63 sugars, such as glucose and fructose, using ultrahigh vacuum techniques.

64 ore sensitive to UV, ionizing radiation, and ultrahigh vacuum than wild-type spores, indicating that

65 Ultrahigh vacuum tip-enhanced Raman spectroscopy (UHV-TE

66 us exposure of Cot molecules and Eu vapor in ultrahigh vacuum to an inert substrate, such as graphene

67 on single crystalline surfaces of titania in ultrahigh vacuum to investigate the unusual size depende

68 ructures have been investigated in real-time ultrahigh vacuum transmission electron microscopy (UHV-T

69 gas-phase, research with model catalysts in ultrahigh vacuum (UHV) and so-called high-pressure cell

70 he ion source from impacting the surface, an ultrahigh vacuum (UHV) chamber for ion deposition by sof

71 gle-crystal surfaces was characterized under ultrahigh vacuum (UHV) conditions by using temperature p

72 nanometer-thin films on insulators and under ultrahigh vacuum (UHV) conditions from photocoupled brom

73 on induced decomposition of adsorbed 1 under ultrahigh vacuum (UHV) conditions proceeds through initi

74 curs on Au(111) upon thermal annealing under ultrahigh vacuum (UHV) conditions.

75 ecular beam reactive scattering (MBRS) under ultrahigh vacuum (UHV) conditions.

76 er absorbed on a rutile TiO2(110) surface in ultrahigh vacuum (UHV) is studied with spin-polarized de

77 ocyanine (CuPc) monolayers is observed using ultrahigh vacuum (UHV) scanning tunneling microscopy (ST

78 Using ultrahigh vacuum (UHV) scanning tunneling microscopy (ST

79 tial surface characterization was done in an ultrahigh vacuum (UHV) system, and depending on preparat

80 In ultrahigh vacuum (UHV) the clean-annealed surface produc

81 In ultrahigh vacuum (UHV), TERS can be performed in pristin

82 bly of 10,12-pentacosadiynoic acid (PCDA) in ultrahigh vacuum (UHV).

83 aces accessed through sample delamination in ultrahigh vacuum (UHV).

84 were deposited on clean Pt(111) surfaces in ultrahigh vacuum (UHV).

85 alternative to cryogenics for SIMS and other ultrahigh-vacuum (UHV) analyses of biological species.

86 clusters are fairly stable upon annealing in ultrahigh vacuum up to 600 K, increasing the temperature

87 om solution onto a Au(111) substrate held in ultrahigh vacuum using electrospray deposition (UHV-ESD)

88 3)2]5 and Ti[N(CH3)2]4 have been examined in ultrahigh vacuum using X-ray photoelectron spectroscopy.

89 re resistance to UV, ionizing radiation, and ultrahigh vacuum was studied in wild-type and DNA repair

90 onal Pt monolayer grown by Pt evaporation in ultrahigh vacuum, we observe a significant destabilizati

91 dine films are reacted with Ca at 30 K under ultrahigh vacuum with the reaction progress monitored by