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1  oxygen anions (or positively charged oxygen vacancies).
2 strong interaction exists between Pt and the vacancies.
3 eO2 superstructure containing ordered oxygen vacancies.
4 ic states associated with double inner-shell vacancies.
5 O2 reactant replenishes these lattice oxygen vacancies.
6 d by the presence and distribution of oxygen vacancies.
7 electrical stress and create defects such as vacancies.
8 he rock-salt phase with randomly distributed vacancies.
9 , which is contributed by the surface oxygen vacancies.
10 of a triangular boron lattice with hexagonal vacancies.
11 r internal electric field present near these vacancies.
12 nanoparticles (ZOTEN) with engineered oxygen vacancies.
13  in-plane tensile strain arising from oxygen vacancies.
14 trinsic inhomogeneous distribution of oxygen vacancies.
15 by creating and further straining sulfur (S) vacancies.
16  also preferred sites for the induced oxygen vacancies.
17 onal positions replacing pre-existing sulfur vacancies.
18  limited by the migration and interaction of vacancies.
19 lly reconfigures the spatial distribution of vacancies.
20 g temperature leads to a reduction in copper vacancies.
21 ere, we report Pt nanoparticles assembled on vacancy-abundant hexagonal boron nitride nanosheets and
22 on with iodine molecules (I2 ), which formed vacancies accompanied by a localized surface plasmon res
23  insertion of multivalent ions into titanium vacancies, allowing a much greater capacity to be obtain
24 he charge is largely balanced by creation of vacancies among the Fe(III) sites (maghemitization).
25 e layered compound RbBi11/3Te6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room te
26  as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising cand
27 ffect on Pt induced by the nanosheets with N-vacancies and B-vacancies for superior CO oxidation cata
28  of 2D MoS2 nanoassemblies are due to atomic vacancies and can act as an active center for vacancy-dr
29 his rapid phase transition produces numerous vacancies and defects before Cu(+) ions can diffuse into
30 e ascribed to the interaction between oxygen vacancies and domain switching.
31 x active dopants such as Mn linked to oxygen vacancies and dopants such as Ni that afford metal nanop
32                     alpha-bis-PCBM fills the vacancies and grain boundaries of the perovskite film, e
33 cluding oxygenated functional groups, carbon vacancies and holes, edge effects, and the presence of d
34                                  Both oxygen vacancies and hydrogen-decorated Zn vacancies were sugge
35 l analysis shows that high density of oxygen vacancies and nitrogen are introduced into the nanofiber
36 ace segregation of dopant cations and oxygen vacancies and observe bonding changes in lanthanum-doped
37 ) -site associated with the generation of Ba vacancies and oxygen vacancies for charge compensation h
38 le iodide, in the perovskite film that fills vacancies and reduces interstitial defects.
39 r 2H-MoS2 for HER by introducing sulphur (S) vacancies and strain.
40                         Mn(II) also binds to vacancies and subsequent comproportionation with structu
41 ns reveal that the synergistic effects of Se vacancies and subsequent P displacements of Se atoms aro
42 ocess induces high density of ordered oxygen vacancies and the formation of LaBaCo2O5.5 (delta = 0) s
43 atalytic performance, but the role of sulfur vacancies and the mechanism determining the reaction kin
44 ide and consequently the inward diffusion of vacancies and their coalescence into larger voids.
45 owed that small vacancy clusters, such as di-vacancies and tri-vacancies, created by collision cascad
46 ce so-called intrinsic defects, e.g., atomic vacancies and/or interstitials.
47 ed surface indium site proximal to an oxygen vacancy and a Lewis basic surface hydroxide site in In2O
48 ntrary to expectation Zr2AlC exhibits higher vacancy and antisite pair formation energies.
49 tions, which confirm the positions of oxygen vacancy and hydroxide defect states within the optical b
50  strongly correlated to the number of oxygen vacancy and hydroxide defects present in the system.
51 t this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic ann
52 entration sensitivity over previous nitrogen-vacancy and picoliter NMR studies.
53 he interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and poss
54 to broaden the knowledge of the evolution of vacancies, and a proper control of the exceedingly activ
55 PbI3 interface due to the formation of MA(+) vacancies, and an n-doped region near the Ag/MAPbI3 inte
56 rface point defect: oxygen vacancies, cation vacancies, and cation adatoms, respectively.
57 ies (Tafel slopes) of the edge sites, sulfur vacancies, and grain boundaries are estimated to be 7.5
58 acitance than its counterpart, Mo2C, with no vacancies, and one of the highest volumetric capacitance
59 osing single-layer regions, introduce single vacancies, and preferentially grow vacancies only in the
60 rs have ascribed this feature to impurities, vacancies, and surface reconstructions.
61 t absorption and enhancement of interstitial-vacancy annihilation.
62 n terms of the occurrence of chromium/sodium vacancy antisite during desodiation and sodiation proces
63 he Co-O bond and the concentration of oxygen vacancies are controlled through Sr(2+) substitution int
64                                     Once all vacancies are filled, the protonation proceeds interstit
65 oodite (gamma-Mg2SiO4), additionally, Si(4+) vacancies are formed, even at a water content as low as
66     In Pb1-xSb2x/3Se solid solutions, cation vacancies are intentionally introduced, where after ther
67 cal and experimental results show that the S-vacancies are new catalytic sites in the basal plane, wh
68 hanism, which is particularly important when vacancies are present, is proposed for polarization swit
69  significant proportion of coupled Mg and Si vacancies are present.
70   Ab initio simulations indicate that iodide vacancies are the preferred sites in mediating the photo
71 ve applications of different structures with vacancies as active electrode materials of lithium or so
72 sisted by the presence of high concentration vacancies at boundaries.
73                   The accumulation of oxygen vacancies at the Cu2O/Cu interface drives the collapse o
74 addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodolumine
75                           However, promoting vacancies at the lower temperatures required for operati
76 e been overlooked include the role of oxygen vacancies, B-O bond covalency, and redox activity of lat
77  metal depletion as well as intrinsic oxygen vacancies, both of which are apparently filled by water
78 ssible way to reduce the influence of oxygen vacancies by introducing a valence change doping in the
79 rTiO3 substrate, which compensates for these vacancies by substitutional replacement and is responsib
80 obe microscope tip can be used to manipulate vacancies by the flexoelectric effect.
81 ntroduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms
82 ntentional extra electrons induced by oxygen vacancies can be strongly suppressed by the change valen
83 phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depol
84 fferent type of surface point defect: oxygen vacancies, cation vacancies, and cation adatoms, respect
85    The memories considered here are nitrogen-vacancy center ensembles (NVEs), each located in a diffe
86  quantum sensor associated with the nitrogen vacancy center in diamond, we experimentally demonstrate
87 edicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibit
88 realize this platform using diamond nitrogen-vacancy centers and use it to investigate magnons in a m
89 eters, indicate that decoherence of Nitrogen-Vacancy centers can be controlled externally to a very l
90                       Sensors using nitrogen-vacancy centers in diamond are a promising tool for smal
91 imulating quantum open systems with Nitrogen-Vacancy centers, which has become an increasingly import
92  in 4H-silicon carbide with embedded silicon vacancy centers.
93 trolling various coherence times of Nitrogen-Vacancy centers; our method is based on a hybrid approac
94               The negatively charged silicon-vacancy centre combines the advantages of its high-quali
95 rature mechanical resonator using a nitrogen-vacancy centre ensemble.
96               Our results enable the silicon-vacancy centre spin to become a controllable resource to
97 tion of coherent control of a single silicon-vacancy centre spin with a microwave field.
98 dressing and controlling individual nitrogen-vacancy centre spins in diamond at room temperature, wit
99  to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband
100 ign guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanos
101  in diamond by using an ensemble of nitrogen-vacancy centres, and demonstrated excellent agreement wi
102 alable and feasible manipulation of nitrogen-vacancy centres.
103     The charge ordered structure of ions and vacancies characterizing rare-earth pyrochlore oxides se
104 RT) simulations for nickel showed that small vacancy clusters, such as di-vacancies and tri-vacancies
105 d interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this be
106 a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterost
107 rea to volume ratio, reactive surface oxygen vacancy concentration and superior oxygen storage capaci
108 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film.
109 Ag/MAPbI3 interface due to formation of I(-) vacancies, consequently forming a p-i-n junction across
110 nding to phyllomanganates of varying initial vacancy content (delta-MnO2, hexagonal birnessite, and t
111 t an upper limit to the concentration of the vacancies contributing to the void volume in the enriche
112  defect cores, and show that the stresses at vacancy cores generate attractive interactions between t
113 ion to EuTiO2.25N0.75, indicating that anion vacancies created during the initial nitridation process
114                         Recently, sulfur (S)-vacancies created on the basal plane of 2H-molybdenum di
115                        The additional oxygen vacancies created through tensile strain enhance the cob
116 cancy clusters, such as di-vacancies and tri-vacancies, created by collision cascades are highly mobi
117 can be driven into proximity with a nitrogen-vacancy defect using small applied magnetic fields, indu
118 position to grow, for the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures wit
119 e that it is the amounts and types of oxygen vacancy defects in, and not the phase of ZrO2 that contr
120 decorated ZnO nanofibers (NFs) enriched with vacancy defects, fabricated via electrospinning and a su
121 roved methane storage capacities with linker vacancy defects.
122  suggest BiOI to be tolerant to antisite and vacancy defects.
123                          The significance of vacancy delocalization in decreasing the vacancy segrega
124 ing precipitates on slip planes, increase in vacancy diffusion barrier, reduction in activated cross-
125                     We report that increased vacancy diffusion barrier, which correlates with the obs
126 lcogen/metal ratio, flake edge diffusion and vacancy diffusion.
127 rate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a s
128                                   Controlled vacancy doping of NCs may be used to tune and tailor sem
129                               These samarium vacancies drastically alter the resistance and plateauin
130 l, the nanoengineered hydrogel obtained from vacancy-driven gelation is mechanically resilient and ca
131                                         This vacancy-driven gelation process does not require externa
132                            A new approach of vacancy-driven gelation to obtain chemically crosslinked
133 acancies and can act as an active center for vacancy-driven gelation with a thiol-activated terminal
134 ase, crystallography shear-planes and oxygen vacancies during sintering.
135  this review, we focus on recent progress in vacancy engineering for the design of materials for ener
136                            Here we propose a vacancy engineering strategy to create dense dislocation
137                                          The vacancy engineering strategy used here should be equally
138  example, ) by the positively charged oxygen vacancies () enriched at the surface.
139                                       Oxygen vacancies, especially their distribution, are directly c
140 native defects in Cs2SnI6 reveal that iodine vacancies exhibit a low enthalpy of formation, and that
141                                              Vacancies exist throughout nature and determine the phys
142 he polarization is thus switchable even when vacancies exist; (ii) The local environment of vacancy i
143 stablished understanding that surface oxygen vacancies facilitate reactions with O2 molecules.
144 magnetic properties of tungsten adsorbed tri-vacancy fluorinated (TVF) graphene.
145 th the generation of Ba vacancies and oxygen vacancies for charge compensation has been firstly demon
146 s is placed on the strategies used to tailor vacancies for metal-insulator transitions, electronic st
147 ced by the nanosheets with N-vacancies and B-vacancies for superior CO oxidation catalysis.
148 um value of approximately 4.7 k B per oxygen vacancy for Ce(4+)/Ce(3+) reduction.
149 ke larger nanocrystals, where Cu(+) ions and vacancies form an ordered super-structure similar to the
150 s behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller si
151 supports (TiO2 and Nb2O5) that induce oxygen-vacancy formation in the support and cause HCOx-function
152 he basis of ab initio calculations of oxygen vacancy formation incorporating defect interactions and
153  VO2 by ionic liquid gating is due to oxygen vacancy formation rather than to electrostatic doping.
154 ich leads to a low energy penalty for oxygen vacancy formation, high ion mobility, and high water upt
155   An important route for doping of NCs is by vacancy formation.
156 l property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced
157 irmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission pe
158  motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band
159 ions to investigate small (N = 1,2) V N He M vacancy/helium complexes, which serve as the nuclei for
160 nt with a damage microstructure dominated by vacancies, highlighting the importance of free-surfaces
161 mple, whilst oxidized sp(3) carbon atoms and vacancies in a graphene sheet can degrade its mechanical
162 ependent of dreierketten chain defects, e.g. vacancies in bridging tetrahedra sites and Al for Si sub
163  and OH) with the presence of induced oxygen vacancies in ceria.
164 g of quantum Darwinism, e.g., using nitrogen vacancies in diamond.
165 een lacking for decades due to the fact that vacancies in ferroelectrics are often charged and polari
166 ition in the attractive Coulomb potential of vacancies in graphene, and further envision its universa
167 ystallographic defects such as bridging site vacancies in its silicate chains.
168 Ca/Si </= 1.3, despite increasing numbers of vacancies in its silicate chains.
169 iMn2 O4 synthesis; a concentration of oxygen vacancies in LiMn2 O4 could be characterized by its volt
170 tragonal magnetic structure is introduced by vacancies in Mn3 Ga0.95 N0.94 , due to the change of the
171     We present how the introduction of anion vacancies in oxyhydrides enables a route to access new o
172 ulations, we investigate the hopping rate of vacancies in phosphorene, an emerging elemental 2D mater
173                                       Oxygen vacancies in proximity to surfaces and heterointerfaces
174 we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form meta
175 ults highlight the beneficial role of sulfur vacancies in the electrocatalytic performance of pentlan
176 ke is a result of oxygen atoms occupying the vacancies in the hydrophilic exfoliated flakes and subse
177 quent P displacements of Se atoms around the vacancies in the resulting cobalt phosphoselenide favora
178       Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yie
179 ined by DFT of a singly negatively charged S vacancy in monolayer, bilayer, trilayer and bulk MoS2.
180 l that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2
181                                       Oxygen vacancies induced dielectric relaxation phenomenon is ob
182 ion (leading to the creation of a additional vacancy/interstitial pair) and annihilation events; sequ
183 mond and graphene, for point defects such as vacancies, interstitials and Frenkel pairs.
184 on at different pH introduces intentional Mn vacancies into the nanosheets, increasing pseudocapacita
185 potential importance of incorporating oxygen vacancies into transition metal oxides as a strategy for
186 larity-induced-self-crumpling and sulfur (S) vacancies intrinsic to chemical exfoliation enables simu
187         An electron gas stabilized by oxygen vacancies is confined within the domain wall, displaying
188  of the 3D structure, a high density of SnI2 vacancies is created resulting in larger band gap, large
189 cancies exist; (ii) The local environment of vacancy is surprisingly insignificant in polarization sw
190 manipulating the density and distribution of vacancies, it is possible to influence their physical pr
191 dic van der Waals' (vdW) gaps (i.e., virtual vacancy layers) in the stack of atomic layers and the co
192                   The introduction of oxygen vacancies leads to a larger interlayer spacing that prom
193                       Thus, a gradient in Cu vacancies leads to an internal electric field within CuB
194 ugh neutron irradiation can induce transient vacancy-like defects in MGs, they are fully annihilated
195 anograting sidewalls are doped with nitrogen-vacancies located a few nanometers from the diamond surf
196                       Indeed, impurities and vacancies may influence the exciton population, create d
197 ccelerated molecular dynamics simulations of vacancy-mediated cation diffusion in Gd2Ti2O7 pyrochlore
198 ccelerated molecular dynamics simulations of vacancy-mediated cation diffusion in Gd2Ti2O7 pyrochlore
199                                              Vacancy-mediated climb models cannot account for the fas
200 ns of SbTe-based stacking faults and using a vacancy-mediated kink motion, and also to understand the
201 experiments and the motion is interpreted as vacancy-mediated migration based on nudged elastic band
202 climb activation energy of 2 (2.5) times the vacancy migration barrier for 1/2<111> (<100>) dislocati
203 endent energy model after normalizing by the vacancy migration barrier.
204 high temperatures, and presumably occurs via vacancy migration.
205  due to point defects such as impurities and vacancies must be investigated and corrected for.
206 rization of different imperfections (e.g., O vacancies, nanofacets) present at oxidic samples.
207              The negatively charged nitrogen vacancy (NV(-)) center in diamond has attracted strong i
208                                   A nitrogen-vacancy (NV(-)) centre in a nanodiamond, levitated in hi
209 tected magnetic resonance (ODMR) of nitrogen-vacancy (NV) centers in diamond nanoparticles provides a
210                                 The nitrogen-vacancy (NV) centre in diamond is emerging as a promisin
211 se ratio of 3 in 1 s of integration.Nitrogen vacancy (NV) centres in diamond can be used for NMR spec
212 Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed a
213    Coherent manipulation of shallow nitrogen-vacancy (NV) color centers enables the probing of nanosc
214 fibre-optic probe that integrates a nitrogen-vacancy (NV) diamond quantum sensor with optical and mic
215 pplicability using optically probed nitrogen-vacancy (NV) quantum defects in diamond, operated under
216             The weak dissipation of nitrogen-vacancy (NV) sensors in room temperature diamond enables
217  qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversi
218 ion and concentrations in octahedral site Fe vacancies of gamma-Fe2 O3 instead of well-known Fe3 O4 S
219 le-crystal X-ray analysis by determining the vacancies of K(+)-ion sites and accounting for the catio
220 second domain type, STEM revealed disordered vacancies of the same Ce atoms that were modulated in th
221            Meanwhile, the presence of oxygen vacancies often leads to a persistent photoconductivity
222  H(+) binding sites, Ce(3+) locations, and O vacancies on (100) facets.
223                   The impact of surface zinc vacancies on charge transfer and charge separation at do
224 has more sites for OER, and generated oxygen vacancies on Co3 O4 surface improve the electronic condu
225 gher surface area, but also generated oxygen vacancies on Co3 O4 surface with more Co(2+) formed.
226 ples studies to investigate the influence of vacancies on ferroelectric polarization and polarization
227 (II) oxide (CoO) nanorods by creating oxygen vacancies on pyramidal nanofacets.
228          Here, we study the effect of oxygen vacancies on structural and electrical properties in epi
229                  By modulating the number of vacancies on the 2D MoS2 nanoassemblies, the physical an
230 ated Co atoms that bond covalently to sulfur vacancies on the basal planes that, when compared with c
231 eared by the disorder due to the presence of vacancies on the C and Ni sites, but does not drasticall
232 roduce a scalable route towards generating S-vacancies on the MoS2 basal plane using electrochemical
233     The ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration
234 ce single vacancies, and preferentially grow vacancies only in the single-layer region.
235 fective BaTiO3 with a large concentration of vacancies (or , or ) possesses a strong nonzero electric
236 hin film superlattices possessing both anion-vacancy order and Sr and Ca chemical order at the subnan
237 ymmetric compounds, utilizing periodic anion-vacancy order to generate multiple polyhedra that togeth
238                                              Vacancy-ordered double perovskites of the general formul
239                                     In these vacancy-ordered double perovskites, the close-packed lat
240 e a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) at an elevat
241 tructure and energetics of cation and oxygen-vacancy ordering in Ho2Zr2O7.
242 l was further improved by introducing oxygen vacancies (OVs) that could be achieved by increasing the
243 iple dissociation-recombination processes of vacancies owing to a small energy cost of approximately
244                Specifically, carbon antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as si
245 lifetime component that was attributed to Zn vacancies passivated by hydrogen.
246                                              Vacancies play a pivotal role in affecting ferroelectric
247 maging line scans reveals the types of point vacancies present in the samples, thus providing atomic-
248 cient sinks for the excess interstitials and vacancies produced in a material under irradiation as co
249 al characterizations demonstrate that oxygen vacancies provide a favourable ionic diffusion environme
250                     The results show that Mn vacancies provide ion intercalation sites which concurre
251 exemplified by the poverty rate, the housing vacancy rate, and the unemployment rate) people escalate
252 modulators to emulate the presence of linker vacancies, resulting in the integration and utilization
253                                              Vacancy-rich layered materials with good electron-transf
254           Herein, a full-spectrum responsive vacancy-rich monolayer BiO2-x has been synthesized.
255        The defect chemistries of both oxygen-vacancy-rich, nonstoichiometric cobalt oxysulfides and e
256                  These itinerant features of vacancies, rooted in the unique puckering structure faci
257                 Our results show that oxygen vacancy rows are not only natural oxygen diffusion chann
258  of vacancy delocalization in decreasing the vacancy segregation energies and facilitating GB migrati
259 are carried out to explore the energetics of vacancy segregation.
260 ingly active and anisotropic movement of the vacancies should be critical for applications based on p
261 ygen and a pyridine-like nitrogen across the vacancy site.
262           Methoxy (or ethoxy) groups on node vacancy sites are converted to a structure incorporating
263                                              Vacancy sites that are energetically unfavorable for seg
264 lts from adsorption on or incorporation into vacancy sites.
265 dissociation of O2 , especially at tellurium vacancy sites.
266 askless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focu
267 lable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to diamond nanodevic
268 gnetic fields, inducing significant nitrogen-vacancy spin splitting.
269 d, we drive both the vortex and the nitrogen-vacancy spins, resulting in enhanced coherent rotation o
270 Te-I bonding renders the formation of iodine vacancy states unfavorable and is responsible for the re
271                                              Vacancy supersaturation, activation of a long-range diff
272 ortant conclusions about the significance of vacancy supply in determining the physical characteristi
273 ing, to introduce a large number of titanium vacancies that act as intercalation sites.
274 he higher activity to the presence of sulfur vacancies that are created local to the observed Co-S-Mo
275 al solid solution of Zr-Ti containing carbon vacancies that are randomly occupied by boron atoms.
276 ingle-crystal CoO nanorods are in the oxygen vacancies that can be readily created on the oxygen-term
277 n the creation of a large quantity of oxygen vacancies that facilitate water dissociation, and fine t
278 o of the CuBi2O4 photocathodes introduces Cu vacancies that increase the carrier (hole) concentration
279  occurrence of either Ce displacements or Ce vacancies that induce the incorporation of O as necessar
280 sence of both interstitial oxygen and cation vacancies, that create diffusion paths which computation
281 m Pt, and on the contrary, when Pt sits on N-vacancies, the nanosheets act as a Lewis base for donati
282 ader charge analysis shows that with Pt on B-vacancies, the nanosheets serve as a Lewis acid to accep
283        A brief discription of the concept of vacancies, the way to create and control them, as well a
284 l analysis gives clear evidence of Fe and Ru vacancies to an extent that the structural integrity may
285 ctrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical tran
286                                            O vacancies turn out to be stable in O-poor environment, i
287                                         Both vacancy-type stacking fault tetrahedra (SFT) and interst
288 with forward and reverse gradients in copper vacancies using a two-step, diffusion-assisted spray pyr
289 dy the interaction between air and chalcogen vacancies (V(X)), the most typical defects in 2D SCs.
290  irradiation, which can be attributed to the vacancy VBi-O ''' as confirmed by the positron annihilat
291 wn that the formation/annihilation of iodine vacancies (VI 's) in MAPbI3 films, driven by electric fi
292          Additionally, the density of copper vacancies was extracted; this quantitatively shows that
293 ; upon continuing the zone melting, samarium vacancies were introduced.
294 h oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emis
295 le region and simultaneously produces oxygen vacancies, which can effectively scavenge photogenerated
296 -mediated C-O bond activation on RuO2 oxygen vacancies, which directly leads to a weakly bound final
297  manipulated by straining the surface with S-vacancies, which fine-tunes the catalytic activity.
298 e cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions.
299 of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-indu
300 n activity through uniformly creating oxygen vacancies without affecting structural integrity of Li-r

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