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1 s a result of the decay of deep holes in the valence band.
2 ng by injecting holes into the semiconductor valence band.
3 ity originates from the N 2p levels near the valence band.
4 carbocation, introducing a hole in the SWNT valence band.
5 tial and the resulting spin splitting of the valence band.
6 the band gap and spin-orbit splitting of the valence band.
7 sport both in the conduction band and in the valence band.
8 ers changes within graphene's conduction and valence bands.
9 f trapped carriers back up to the conduction/valence bands.
10 ndicated by the overall movement of the deep valence bands.
11 ergy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly i
14 CdS, CdSe, ZnS, and ZnSe, we infer favorable valence band alignments between PbSe and compositionally
15 region arises from the N 2p levels near the valence band and from the color centers induced by the o
16 nalyze the splitting of states at the top of valence band and the bottom of conduction band, followin
17 ble step-like feature near the bottom of the valence band and then remains almost constant with incre
19 tronic density of states near the top of the valence band, and (iii) a Fermi level that lies in the s
20 nisotropic g-factors for both conduction and valence bands, and elucidate the magnetic-field effect o
21 cesses involving the filling of holes in the valence band are thought to make important contributions
22 lation at twice the phonon frequency for the valence bands are observed at time scales ranging from t
23 hotoelectron spectroscopy reveals a quasi-1D valence band as well as a direct gap of 1.15 eV, as the
24 offset minimization through the alignment of valence bands between the host PbS and the embedded seco
25 (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than th
26 rgy separation between light- and heavy-hole valence bands by widening the principal band gap, which
28 figuration along with holes in the oxygen 2p valence band, confirming suggestions that these material
29 , and show that defects mostly influence the valence band, consistent with the observation of ultrahi
30 e due to the synergy of resonance levels and valence band convergence, as demonstrated by the Pisaren
31 mimetals are systems in which conduction and valence bands cross each other and the crossings are pro
33 s are used to demonstrate a splitting of the valence band due to the band anticrossing interaction be
34 illed defect gap states lying just above the valence band edge and they are shown to give a consisten
35 w the band gap is affected by a shift of the valence band edge as a function of the layer number.
36 ructured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemi
37 laser illumination-induced process moves the valence band edge at the n-type semiconductor/water inte
38 alysts on any semiconductor electrode with a valence band edge located at a more positive potential t
39 confined hole state 260 to 70 meV above the valence band edge state for NCs with edge lengths from a
43 ly and sufficiently broadly that it prevents valence-band-edge states from being thermally depopulate
44 racter and large spin-orbit splitting of the valence band edges (at the K and K' valleys) in monolaye
47 f atoms locally affect the orbital motion of valence band electrons, which, in the presence of an ext
48 t can dramatically change the conduction and valence band energies of both the core and the shell.
49 ensity functional theory for calculations of valence band energy levels of nanoscale precipitates of
50 these nTP device resistances track with the valence band energy levels of the PM(n) wire, which were
52 us, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperat
55 aration of the non-degenerate conduction and valence bands from adjacent bands results in the suppres
56 n accompanying tunable spin splitting of the valence bands further reveals a complex interplay betwee
57 was recently demonstrated, transport in the valence band has been elusive for solid-state devices.
58 ctors, a conduction-band electron attracts a valence-band hole (electronic vacancy) to create a bound
59 inate from recombination of a photogenerated valence-band hole and an occupied donor level, probably
61 ibutions of the conduction-band electron and valence-band hole wave functions through the choice of t
63 rgetic to reduce water, while the associated valence band holes are energetically able to oxidize wat
64 cals of the type Ti-O(*) and Ti-O(*)-Ti from valence band holes based on their solvation at aqueous i
65 rmediates formed by trapping photogenerated, valence band holes on different reactive sites of the ox
66 ten accepted view that T(C) is controlled by valence band holes, thus opening new avenues for achievi
68 ndicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger t
70 t shows a Hush-type Robin-Day class II mixed valence band in its optical spectrum despite the fact th
71 a higher contribution from Ag(I) ions to the valence band in the photodimerized solid, supporting the
74 ration between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Se
75 ima in the conduction band (or maxima in the valence band) in momentum space, and if it is possible t
76 opping between Fe atoms, forming a localized valence band, in particular Fe 3d-electronic structure,
78 s (electrons in conduction bands or holes in valence bands)--internal properties of the system that a
80 n which an electron that is excited from the valence band is bound by the Coulomb interaction to the
81 doping introduces resonant levels inside the valence bands, leading to a considerably improved Seebec
82 oping introduces resonance levels inside the valence bands, leading to a significant improvement in t
83 olecular orbitals (HOMO) with respect to the valence band level of the perovskite, and time-resolved
84 e tailor the electronic structure of its two valence bands (light hole L and heavy hole Sigma) to mov
85 the contribution of a specific state in the valence band manifold originating from the hybridized lo
86 out-of-plane electronic structure, with the valence band maxima located away from any particular hig
87 de distribution of potential barriers at the valence band maximum (VBM) (-10 to -160 meV) and the con
88 nergetics (conduction band minimum (CBM) and valence band maximum (VBM)) of device-relevant, methylam
90 n films display spin-split states around the valence band maximum at the Brillouin zone corners with
91 here is evidence of mid-gap states above the valence band maximum due to the hydrogenated, engineered
92 in-splitting of approximately 180 meV at the valence band maximum of a monolayer MoSe2 film could exp
93 ce band, the localized N 2p levels above the valence band maximum, and the 3d states of Ti(3+) below
94 of the methoxy species is much closer to the valence band maximum, suggesting why it is more photocat
95 vation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about
96 ose to Fermi level is increased to raise the valence-band maximum, as revealed by VB-PES spectra, ind
97 metry-allowed optical transition between the valence-band maximum, composed of Mn 3d(x(2)-y(2),xy) st
99 s an increased the power factor by virtue of valence band modification combined with a very reduced l
103 cence indicates that hole injection from the valence band of perovskite into the HOMO of triazatruxen
104 om of the conduction band and the top of the valence band of the material are distributed on two oppo
106 hese orbitals are critically involved in the valence band of these materials, such that modulation of
107 cal transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction
108 creased electron density of states above the valence band of TiO2, which explains the red-shifted lig
110 SWNT doping based on electron transfer from valence bands of nanotubes to unoccupied levels of SPEEK
112 he bandgap and create convergence of the two valence bands of PbTe, greatly boosting the power factor
113 ramagnetic Cu(2+) dopants and the conduction/valence bands of the host semiconductor--but also show a
114 first-principles calculations show that the valence bands of these are dominated by the N (2p) state
115 shell and allows a direct measurement of the valence band offset for nanowires of various shell compo
118 pe-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction ba
122 olymer chain and localization of the highest valence band orbitals, the correlation is moderate and e
123 -ray absorption near-edge structure (XANES), valence-band photoemission spectroscopy (VB-PES), X-ray
126 ia, e.g., solar radiation and coupled to the valence band reservoir state beta via optical phonons.
127 his degeneracy is incompletely lifted in the valence band, spreading the hole population among severa
132 X-ray photoelectron spectroscopy (XPS) and valence band studies were also used for the first time o
133 created by the indium impurities inside the valence band, supported by the first-principles simulati
135 mainly by a stronger destabilization of the valence band than the conduction band via donor-type sub
137 reveal energy-gain and -loss Floquet replica valence bands that appear instantaneously in concert wit
138 ads to an add-on shoulder on the edge of the valence band, the localized N 2p levels above the valenc
139 racy (12 or more at high temperature) of the valence band, the n-type versions are limited to a valle
140 gest that single step hole transfer from the valence band to ferrocene is in the Marcus inverted regi
141 the band gap, electrons are excited from the valence band to the conduction band to initialize the re
142 positioned in proximity to the edge of GaAs valence band, to the sequence of a peptide that binds to
143 tions of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LC
145 d energetics of the conduction band (CB) and valence band (VB) for films of zinc stannate (Zn(2)SnO(4
146 conduction band as compared with that in the valence band, which leads to higher mobility of electron
147 ction of resonance states and convergence of valence bands, which have been confirmed by first-princi
148 of an energy gap between its conduction and valence bands, which makes it difficult to achieve low p
150 the observed linear dispersed feature in the valence band, with a Fermi velocity of comparable to tha
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