ライフサイエンスコーパス: vapor deposition

1 th single-layer graphene, formed by chemical vapor deposition.

2 esized by microwave plasma enhanced chemical vapor deposition.

3 synthesized from these templates by chemical vapor deposition.

4 rea graphene films prepared through chemical vapor deposition.

5 0.05 eV) than similar films made by chemical vapor deposition.

6 substrates using a low temperature chemical vapor deposition.

7 omplex colloids with glancing angle physical vapor deposition.

8 s multinary compounds compared with physical vapor deposition.

9 ell hybrid foam is fabricated using chemical vapor deposition.

10 as a higher-quality alternative to chemical vapor deposition.

11 thacin (IMC) were prepared by using physical vapor deposition.

12 (CNTs) in water-assisted catalytic chemical vapor deposition.

13 ling pine trees were synthesized by chemical vapor deposition.

14 ilm conformality in low temperature chemical vapor deposition.

15 epilayers prepared by metal-organic chemical vapor deposition.

16 axially grown on MoS2 monolayer via chemical vapor deposition.

17 ding effect commonly encountered in chemical vapor deposition.

18 plying the concept in photoassisted physical vapor deposition.

19 f p-type Sb2Te3 nanowires, grown by chemical vapor deposition.

20 CNTs are grown on metal wires after chemical vapor deposition.

21 on was performed by plasma-enhanced chemical vapor deposition.

22 and single layer graphene grown by chemical vapor deposition.

23 oS2 grown on silicon oxide by using chemical vapor deposition.

24 ar cell, deposited by high-pressure chemical vapor deposition.

25 W1-x S2y Se2(1-y) is reported using chemical vapor deposition.

26 g graphene on 4H-SiC(0001) grown by chemical vapor deposition.

27 by a novel method of super-cooling chemical-vapor-deposition.

28 enecarboxylate) via low-temperature chemical vapor deposition (50 degrees C) is reported.

29 d in a single-step aerosol-assisted chemical vapor deposition (AACVD) process.

30 50 degrees C using aerosol-assisted chemical vapor deposition (AACVD) with pyridine as the solvent.

31 By a novel in situ chemical vapor deposition, activated N-doped hollow carbon-nanotu

32 combining particle lithography with organic vapor deposition and electroless deposition of iron oxid

33 a arc discharge, laser ablation and chemical vapor deposition and functionalizing carbon nanotubes th

34 Chemical vapor deposition and growth dynamics of highly anisotrop

35 0-250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either oct

36 signal by growing graphene through chemical vapor deposition and, second, to control the immobilizat

37 ully controlled Raman spectroscopy, physical vapor deposition, and lift-off processes.

38 nesses, grown in a microwave plasma chemical vapor deposition apparatus.

39 raphene-catalyst interaction during chemical vapor deposition are investigated using in situ, time- a

40 s, and diamond films fabricated via chemical vapor deposition are the most popular organic bioelectro

41 area monolayer graphene produced by chemical vapor deposition are used for label-free electrical dete

42 yed nanocatalysts are generated via chemical vapor deposition-assisted facile one-pot synthesis.

43 Ge(1-x)Sn(x) alloys are created by chemical vapor deposition at 350 degrees C on Si(100).

44 ion of Ti(NMe(2))(4) with SiH(4) in chemical vapor deposition at 450 degrees C yielded thin Ti-Si-N t

45 of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 degrees C i

46 Under ultrahigh-vacuum conditions, physical vapor deposition at approximately the same substrate tem

47 faces of self-assembled monolayers (SAMs) by vapor deposition at cryogenic temperatures (approximatel

48 d, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, from TiCl(4)

49 nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer wi

50 Here we show that physical vapor deposition can substantially improve the photostab

51 combinatorial atmospheric pressure chemical vapor deposition (cAPCVD) can be used as a synthetic too

52 The approach involves chemical vapor deposition, catalytic particle size control by sub

53 d growth of graphene under a plasma chemical vapor deposition condition.

54 Chemical vapor deposition creates a continuous graphene coating p

55 phene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared u

56 carbon nanotubes (CNTs) by thermal chemical vapor deposition (CVD) and graphitization of solid amorp

57 on surface-passivated Si wafers via chemical vapor deposition (CVD) and microstructured using inducti

58 ride (h-BN) films are prepared from chemical vapor deposition (CVD) and readily transferred onto poly

59 - and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to construct comple

60 graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus cont

61 um disulfide (MoS2 ) synthesized by chemical vapor deposition (CVD) are studied using a local probe m

62 olite-like carbons are prepared via chemical vapor deposition (CVD) at 800 or 850 degrees C using zeo

63 Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to

64 immobilized onto biomaterials by a chemical vapor deposition (CVD) coating strategy.

65 e3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor.

66 In most applications based on chemical vapor deposition (CVD) graphene, the transfer from the g

67 polymer" parylene-C, to conducting chemical vapor deposition (CVD) grown graphene.

68 We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical cur

69 ations of the mechanisms underlying chemical vapor deposition (CVD) growth of fibrous carbon nanostru

70 Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) p

71 ect control over the product during chemical vapor deposition (CVD) growth of SWNT is desirable, and

72 llic Mo clusters grown by Mo(CO)(6) chemical vapor deposition (CVD) have a constant size independent

73 re grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner within a sin

74 ic carbon nanoelectrode obtained by chemical vapor deposition (CVD) inside a quartz nanopipette.

75 Chemical vapor deposition (CVD) is a promising method for their c

76 s temperatures in a plasma-enhanced chemical vapor deposition (CVD) is demonstrated using multiphase,

77 gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated.

78 Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and scatterin

79 ene film by molten copper-catalyzed chemical vapor deposition (CVD) is reported.

80 single-layer WS2 film by a two-step chemical vapor deposition (CVD) method followed by a laser thinni

81 We describe a chemical vapor deposition (CVD) method for the surface modificati

82 Especially, the facile chemical vapor deposition (CVD) method has enabled morphological

83 )B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon dioxide

84 catalytically activated silica by a chemical vapor deposition (CVD) method using hexane as the carbon

85 matic molecules as the seeds in the chemical vapor deposition (CVD) method.

86 In this work, ethanol-chemical vapor deposition (CVD) of a grown p-type semiconducting

87 The method is based on chemical vapor deposition (CVD) of a photodefinable coating, poly

88 engineered spacer layer prepared by chemical vapor deposition (CVD) of functional polymers.

89 ngle-wall and multi-wall CNTs using chemical vapor deposition (CVD) of methane without the presence o

90 forming hydrophobic barriers using chemical vapor deposition (CVD) of trichlorosilane (TCS) on a chr

91 nolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates

92 films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates.

93 tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates, and its a

94 ubstrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent thermal oxide

95 phene nanoribbon (GNR) formation by chemical vapor deposition (CVD) on top of Au(111) surfaces.

96 f single layers can be done also by chemical vapor deposition (CVD) or via reduction of silicon carbi

97 Chemical vapor deposition (CVD) polymerization directly synthesiz

98 Polymers prepared by chemical vapor deposition (CVD) polymerization have found broad a

99 For this purpose, chemical vapor deposition (CVD) polymerization is used to functio

100 The chemical vapor deposition (CVD) polymerization of metalloporphyri

101 -p-xylylene), which are prepared by chemical vapor deposition (CVD) polymerization of the correspondi

102 Chemical vapor deposition (CVD) polymerization utilizes the deliv

103 oly-p-xylylene coatings prepared by chemical vapor deposition (CVD) polymerization, for surface plasm

104 by a unique, single-step, catalytic chemical vapor deposition (CVD) process consisting of dissolved c

105 we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-

106 e we report a controllable two-step chemical vapor deposition (CVD) process for lateral and vertical

107 owed by carbon deposition through a chemical vapor deposition (CVD) process with methane as a carbon

108 iothermic reduction with subsequent chemical vapor deposition (CVD) process.

109 Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promis

110 macroporous graphene foam grown by chemical vapor deposition (CVD) served as the scaffold of the fre

111 carbon nanotubes directly from the chemical vapor deposition (CVD) synthesis zone of a furnace using

112 using the probe in conjunction with chemical vapor deposition (CVD) techniques.

113 A film of CNTs was deposited by chemical vapor deposition (CVD) to form the stationary phase in t

114 graphene synthesized using scalable chemical vapor deposition (CVD) to polycarbonate track-etched sup

115 t growth of carbon nanotube tips by chemical vapor deposition (CVD) using ethylene and iron catalysts

116 Samples prepared by chemical vapor deposition (CVD) using pyridine on copper exhibit

117 nert CNT arrays were synthesized by chemical vapor deposition (CVD) using thin films of Fe and Co as

118 Ru particles were grown by chemical vapor deposition (CVD) via a Ru(3)(CO)(12) precursor on

119 kes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers are relati

120 ojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion ef

121 ressure, by direct deposition or by chemical vapor deposition (CVD), without the use of hydrogen or a

122 monly used standard copper foils in chemical vapor deposition (CVD).

123 rected nanotube growth method using chemical vapor deposition (CVD).

124 aman active modes in SWNTs grown by chemical vapor deposition (CVD).

125 diameter), using microwave-assisted chemical vapor deposition (CVD).

126 nanowires prepared by Au-catalyzed chemical vapor deposition (CVD).

127 g applications of graphene grown by chemical vapor deposition (CVD).

128 e by direct current plasma enhanced chemical vapor deposition (DC-PECVD) method.

129 ayer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration

130 mily of glasses rapidly obtained by physical vapor deposition directly into the solid state, endowed

131 Electrostatic Spray-Assisted Vapor Deposition (ESAVD) is a non-vacuum and cost-effect

132 tion of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage-dependen

133 , through direct synthesis from solution and vapor deposition experiments under conditions consistent

134 The floating catalyst chemical vapor deposition (FC-CVD) process permits macro-scale as

135 ere deposited by microwave-assisted chemical vapor deposition, for 1-2 h, using a 0.5% CH4/H2 source

136 posited as a thin film by catalytic chemical vapor deposition from either CO or C2H4 as the precursor

137 n in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance s

138 n up directions for applications of chemical vapor deposition graphene on flexible substrates.

139 e direct transfer via lamination of chemical vapor deposition graphene onto different flexible substr

140 ed on oxidized silicon wafers using chemical vapor deposition grown carbon nanotubes that were functi

141 Here we demonstrate fully-suspended chemical vapor deposition grown graphene microribbon arrays that

142 Chemical vapor deposition grown multilayer graphene was transferr

143 owever, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation unde

144 s are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride

145 e bilayer grain boundaries (GBs) in chemical-vapor-deposition-grown large-area graphene are identifie

146 Chemical vapor deposition growth of 1T' ReS2x Se2(1-x) alloy mono

147 The chemical vapor deposition growth of unusual arrangements of singl

148 he temperature-swing stage in the sequential vapor deposition growth process allowed us to cool the e

149 lm synthesized from C2H4-CVD (CVD = chemical vapor deposition) had higher CNT density and thus was a

150 Vapor deposition has been used to create glassy material

151 ted using hyperbaric-pressure laser chemical vapor deposition (HP-LCVD).

152 methacrylate) (PPMA) via initiated chemical vapor deposition (iCVD) and poly(allylamine) (PAAm) via

153 demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of the resist

154 n a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane

155 It may form, e.g., by water freezing or vapor deposition in the Earth's atmosphere or in extrate

156 that formed in presolar supernovae by carbon vapor deposition, in asteroidal impacts and meteorite cr

157 Physical vapor deposition is commonly used to prepare organic gla

158 ers (CNFs) grown by plasma enhanced chemical vapor deposition is found to be effective for the simult

159 eterostructure via direct growth by chemical vapor deposition is reported.

160 e-crystal domains on Cu foils using chemical vapor deposition is reported.

161 Graphene grown by chemical vapor deposition is transferred by a very simple, yet ef

162 Chemical vapor deposition is used to grow single layer graphene o

163 Initiated chemical vapor deposition is used to synthesize a novel alternati

164 A variant of initiated chemical vapor deposition is used to synthesize a thin film that

165 Initiated chemical vapor deposition is used to synthesize a thin film that

166 he bottom up, called barrier-guided chemical vapor deposition, is introduced.

167 lm on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method.

168 akes were derived from low pressure chemical vapor deposition (LPCVD) method.

169 e electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS procedure to el

170 High pressure chemical vapor deposition may open a new way to low cost depositi

171 An oxygen-assisted hydrocarbon chemical vapor deposition method is developed to afford large-sca

172 A facile chemical vapor deposition method to prepare single-crystalline VS

173 were first synthesized by a simple chemical vapor deposition method using Na as the dopant source.

174 The vapor deposition method was designed to overcome current

175 The metallorganic chemical vapor deposition method was successfully used to synthes

176 l tellurides are synthesized by the chemical vapor deposition method.

177 teral fusion into wider AGNRs, by a chemical vapor deposition method.

178 Herein, we develop a simple chemical-vapor-deposition method to fabricate graphene-isolated-A

179 ilicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMO

180 cal properties similar to the films grown by vapor deposition methods.

181 1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen production.

182 rmally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesize

183 nventional solid zinc metal-organic chemical vapor deposition (MOCVD) precursors.

184 s at 410 degrees C by metal-organic chemical vapor deposition (MOCVD), and their phase structure, mic

185 a standard QCM using metal-organic chemical-vapor deposition (MOCVD).

186 or printing, specifically oxidative chemical vapor deposition (oCVD), is demonstrated.

187 ranes (CNMs) were prepared by doing chemical vapor deposition of carbon within the pores of a micropo

188 Si/SiO(2) surfaces is reported from chemical vapor deposition of Cd[(TeP(i)Pr(2))(2)N](2).

189 f the template membrane, and then sequential vapor deposition of Cr, SiO(2), Cr, Au, and Pt on one si

190 pens up a new avenue for controlled chemical vapor deposition of crystals through resonant vibrationa

191 Here, we report physical vapor deposition of Cu thin films on large-format ( appr

192 Chemical vapor deposition of germanium onto the silicon (001) sur

193 ene can grow on metal substrates by chemical vapor deposition of hydrocarbons.

194 of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and

195 direct laser writing and selective physical vapor deposition of magnetic materials.

196 graphene replicas, fabricated using chemical vapor deposition of methane.

197 rgy electron irradiation during the chemical vapor deposition of model Ziegler-Natta catalysts can be

198 ses and carbon surfaces prepared by chemical vapor deposition of organic compounds on porous zirconia

199 e general and should facilitate the chemical vapor deposition of other oxide and nitride materials.

200 e (PbS) nanowire "pine trees" using chemical vapor deposition of PbCl(2) and S precursors and systema

201 ostructure can modulate the rate of chemical vapor deposition of SiO2 and TiO2 with nanometer-scale s

202 The method combines physical vapor deposition of small-molecules, plasma enhanced che

203 2-x)) with widths down to 10 nm via chemical vapor deposition of the single-source precursor Mn(CO)(5

204 were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concent

205 on the surface of H:Si through a sequence of vapor deposition of titanium tetra(tert-butoxide) (1) an

206 n synthesized as precursors for the chemical vapor deposition of WN(x)C(y), a material of interest fo

207 ar self-assembly that occurs during physical vapor depositions of titanium (Ti) onto specifically con

208 nction fibers made by high pressure chemical vapor deposition offer new opportunities in textile phot

209 m was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nan

210 lity single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved

211 fer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers commonly used

212 Indeed, growth of the BL-ice I through vapor deposition on graphene/Pt(111) substrate has been

213 r shock freezing of the aqueous solutions or vapor deposition on ice grains, exhibited unequivocal ba

214 Growth of graphene by chemical vapor deposition on metal supports has become a promisin

215 of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed seed partic

216 ecylacrylate) chains with initiated chemical vapor deposition on silicon substrates.

217 ock-freezing of DPE aqueous solutions or DPE vapor-deposition on pure ice grains, was studied in the

218 olayers of 1-halohexanes were formed through vapor deposition onto graphite surfaces in ultrahigh vac

219 cated by the growth of BDD films by chemical vapor deposition onto sharpened tungsten wires.

220 Semiconductors deposited by vapor deposition onto the crystalline OTS SAM grow in a

221 r electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sens

222 was treated with a plasma-enhanced chemical vapor deposition (PECVD) of perfluorohexane creating a h

223 Using plasma-enhanced chemical vapor deposition (PECVD) process at low temperature, the

224 hotolithography and plasma-enhanced chemical vapor deposition (PECVD) techniques, followed by subsequ

225 often deposited by plasma-enhanced chemical vapor deposition (PECVD), currently attract a great deal

226 ous Si deposited by plasma-enhanced chemical vapor deposition (PECVD).

227 n, we demonstrate the usefulness of chemical vapor deposition polymerization for surface modification

228 l groups on silica surfaces through a simple vapor deposition process employing different ratios of t

229 A facile vacuum-assisted vapor deposition process has been developed to control t

230 anotubes (CNTs) via a novel ethanol chemical vapor deposition process is presented.

231 the infrared range by an efficient chemical vapor deposition process.

232 ass substrates by a straightforward chemical vapor deposition process.

233 s been synthesized using a one-step chemical vapor deposition process.

234 osition) and MOCVD (= metal-organic chemical vapor deposition) processes in materials science, e.g. f

235 Physical vapor deposition (PVD) and electrodeposition were used f

236 We find that vapor deposition results in growth of stacking disordere

237 hemically deposited Au for a long time or by vapor deposition, shifted the stripping potential more p

238 , and large graphene films grown by chemical vapor deposition showed p-type doping accompanied by a c

239 al efficient when compared with conventional vapor deposition since the material is directed to the p

240 ility of current techniques such as chemical vapor deposition, spray and dip coating, and vacuum filt

241 islands of MoS2 grown via a refined chemical vapor deposition synthesis technique.

242 ibution, DC magnetron sputtering, a physical vapor deposition technique, is applied to the preparatio

243 trated employing a microwave plasma chemical vapor deposition technique.

244 ons of silicon nitride diatomics in chemical vapor deposition techniques and interstellar environment

245 iamond grown using microwave plasma chemical vapor deposition techniques is found to be ideal as the

246 Vapor deposition techniques were utilized to synthesize

247 eparation of metallic nanorods from physical vapor deposition through self-organized seeds and experi

248 rs were grown using plasma enhanced chemical vapor deposition to fabricate nanoelectrode arrays in a

249 ops a new growth strategy employing chemical vapor deposition to grow monolayer 2D alloys of Re-doped

250 d previously by electrically-heated chemical vapor deposition under vacuum conditions were relatively

251 Floating catalyst chemical vapor deposition uniquely generates aligned carbon nanot

252 on undoped Si by microwave-assisted chemical vapor deposition using a 4-h growth with a 0.5% CH4/H2 s

253 means of microwave plasma-assisted chemical vapor deposition using in-situ-evaporated Fe catalysts.

254 centimeters on copper substrates by chemical vapor deposition using methane.

255 morphology of amorphous solid water grown by vapor deposition was found to depend strongly on the ang

256 s and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predomi

257 WNTs grown on SiO2/Si substrates by chemical vapor deposition with and without metal contacts.

258 rine doped tin oxide (FTO) films by chemical vapor deposition with inclusions of different additives

259 oil substrates using rapid atmospheric flame vapor deposition without any chamber or walls.

260 rystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts

261 NG) sheets via atmospheric-pressure chemical vapor deposition, yielding a unique N-doping site compos